| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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.JPG "NTMFD4902NFT1G") |
NTMFD4902NFT1G | onsemi |
 Description: MOSFET 2N-CH 30V 10.3A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W, 1.16W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTMFD4902NFT3G | onsemi |
Description: MOSFET 2N-CH 30V 10.3A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W, 1.16W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTMFS5830NLT1G | onsemi |
Description: MOSFET N-CH 40V 28A/172A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 172A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTSB20100CT-1G | onsemi |
Description: DIODE ARRAY SCHOT 100V 10A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-262 (I2PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 A Current - Reverse Leakage @ Vr: 800 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTSB30100CT-1G | onsemi |
Description: DIODE ARRAY SCHOT 100V 15A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-262 (I2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTST20100CTG | onsemi |
Description: DIODE ARR SCHOTT 100V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 A Current - Reverse Leakage @ Vr: 800 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTST30100CTG | onsemi |
Description: DIODE ARR SCHOTT 100V 15A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NVF2955T1G | onsemi |
Description: MOSFET P-CH 60V 2.6A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 750mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SOT-223 (TO-261) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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NVTFS4824NTWG | onsemi |
Description: MOSFET N-CH 30V 18.2A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.2A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 23A, 10V Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 12 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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RB520S30T5G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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RB521S30T5G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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RD0306T-H | onsemi |
Description: DIODE STANDARD 600V 3A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TP Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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REF3012TB-GT3 | onsemi |
Description: IC VREF SERIES 0.2% SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±0.2% Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 50ppm/°C Output Type: Fixed Mounting Type: Surface Mount Voltage - Input: 2.7V ~ 5.5V Reference Type: Series Operating Temperature: -40°C ~ 85°C (TA) Current - Supply: 30µA Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 1.25V Noise - 0.1Hz to 10Hz: 50µVp-p Part Status: Obsolete Current - Output: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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REF3020TB-GT3 | onsemi |
Description: IC VREF SERIES 0.2% SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±0.2% Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 50ppm/°C Output Type: Fixed Mounting Type: Surface Mount Voltage - Input: 2.7V ~ 5.5V Reference Type: Series Operating Temperature: -40°C ~ 85°C (TA) Current - Supply: 30µA Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 2.048V Noise - 0.1Hz to 10Hz: 50µVp-p Part Status: Obsolete Current - Output: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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REF3025TB-GT3 | onsemi |
Description: IC VREF SERIES 0.2% SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±0.2% Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 50ppm/°C Output Type: Fixed Mounting Type: Surface Mount Voltage - Input: 2.7V ~ 5.5V Reference Type: Series Operating Temperature: -40°C ~ 85°C (TA) Current - Supply: 30µA Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 2.5V Noise - 0.1Hz to 10Hz: 50µVp-p Part Status: Obsolete Current - Output: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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REF3030TB-GT3 | onsemi |
Description: IC VREF SERIES 0.2% SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±0.2% Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 50ppm/°C Output Type: Fixed Mounting Type: Surface Mount Voltage - Input: 2.7V ~ 5.5V Reference Type: Series Operating Temperature: -40°C ~ 85°C (TA) Current - Supply: 30µA Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 3V Noise - 0.1Hz to 10Hz: 50µVp-p Part Status: Obsolete Current - Output: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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REF3033TB-GT3 | onsemi |
Description: IC VREF SERIES 0.2% SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±0.2% Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 50ppm/°C Output Type: Fixed Mounting Type: Surface Mount Voltage - Input: 2.7V ~ 5.5V Reference Type: Series Operating Temperature: -40°C ~ 85°C (TA) Current - Supply: 30µA Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 3.3V Noise - 0.1Hz to 10Hz: 50µVp-p Current - Output: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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REF3040TB-GT3 | onsemi |
Description: IC VREF SERIES 0.2% SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±0.2% Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 50ppm/°C Output Type: Fixed Mounting Type: Surface Mount Voltage - Input: 2.7V ~ 5.5V Reference Type: Series Operating Temperature: -40°C ~ 85°C (TA) Current - Supply: 30µA Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 4.096V Noise - 0.1Hz to 10Hz: 50µVp-p Current - Output: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SB01-15C-TB-E | onsemi |
Description: DIODE SCHOTTKY 150V 100MA 3CP Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 7pF @ 10V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: 3-CP Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA Current - Reverse Leakage @ Vr: 50 µA @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SB02-09C-TB-E | onsemi |
Description: DIODE SCHOTTKY 90V 200MA 3CP Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: 3-CP Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SB05-03Q-TL-E | onsemi |
Description: DIODE SCHOTTKY 30V 500MA 3MCP Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 16pF @ 10V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: 3-MCP Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Current - Reverse Leakage @ Vr: 30 µA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SB05-05C-TB-E | onsemi |
Description: DIODE SCHOTTKY 50V 500MA 3CP Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 17pF @ 10V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: 3-CP Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Current - Reverse Leakage @ Vr: 50 µA @ 25 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SB05W05C-TB-E | onsemi |
Description: DIODE ARRAY SCHOT 50V 500MA 3-CP Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 500mA Supplier Device Package: 3-CP Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Current - Reverse Leakage @ Vr: 50 µA @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SB07-03C-TB-E | onsemi |
Description: DIODE SCHOTTKY 30V 700MA 3CP Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 700mA Supplier Device Package: 3-CP Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA Current - Reverse Leakage @ Vr: 80 µA @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SB10-05P-TD-E | onsemi |
Description: DIODE SCHOTTKY 50V 1A SOT89/PCP1 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 52pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOT-89/PCP-1 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 80 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SB20-03P-TD-E | onsemi |
Description: DIODE SCHOTTKY 30V 2A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Schottky Capacitance @ Vr, F: 70pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: PCP Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SB80W06T-H | onsemi |
Description: DIODE ARRAY SCHOTTKY 60V 4A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: TP Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SBA120-18J | onsemi |
Description: DIODE ARR SCHOT 180V 12A TO220ML Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 12A Supplier Device Package: TO-220ML Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 180 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 6 A Current - Reverse Leakage @ Vr: 300 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SBR100-10JS | onsemi |
Description: DIODE ARR SCHOT 100V 10A TO220ML Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220ML Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SBR200-10JS | onsemi |
Description: DIODE ARR SCHOT 100V 20A TO220ML Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220ML Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SBS817-TL-E | onsemi |
Description: DIODE ARRAY SCHOTTKY 15V 2A 8EMH Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 2A Supplier Device Package: 8-EMH Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 2 A Current - Reverse Leakage @ Vr: 300 µA @ 7.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SBS818-TL-E | onsemi |
Description: DIODE ARRAY SCHOTTKY 30V 2A 8EMH Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 2A Supplier Device Package: 8-EMH Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A Current - Reverse Leakage @ Vr: 350 µA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| SBS822-TL-H | onsemi |
Description: DIODE ARRAY SCHOTTKY 20V 5MCPH Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 1A Supplier Device Package: 5-MCPH Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A Current - Reverse Leakage @ Vr: 110 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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SBT100-10G | onsemi |
Description: DIODE ARR SCHOTT 100V 10A TO-220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3.5 A Current - Reverse Leakage @ Vr: 100 µA @ 50 V |
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SBT100-16LS | onsemi |
Description: DIODE ARR SCHOT 160V 10A TO220FI Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FI(LS) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 160 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 160 V |
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SBT150-04Y-DL-E | onsemi |
Description: DIODE ARRAY SCHOT 40V 15A SMP-FD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: SMP-FD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 20 V |
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SBT250-04R | onsemi |
Description: DIODE ARR SCHOTT 40V 25A TO3PML Packaging: Tray Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 25A Supplier Device Package: TO-3PML Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 300 µA @ 20 V |
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SBT80-06J | onsemi |
Description: DIODE ARR SCHOTT 60V 8A TO-220ML Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-220ML Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
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SBT80-10J | onsemi |
Description: DIODE ARR SCHOTT 100V 8A TO220ML Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-220ML Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 50 V |
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SBT80-10JS | onsemi |
Description: DIODE ARR SCHOTT 100V 8A TO220ML Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-220ML Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 50 V |
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В кошику од. на суму грн. | ||||||||||
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SBT80-10Y-E | onsemi |
Description: DIODE ARRAY SCHOT 100V 8A SMP-FD Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: SMP-FD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 50 V |
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SCH1330-TL-H | onsemi |
Description: MOSFET P-CH 20V 1.5A 6SCH Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 241mOhm @ 750mA, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 1mA Supplier Device Package: 6-SCH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V |
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SCH2202-TL-E | onsemi |
Description: TRANS 2NPN DUAL 15V 600MA 6-SCH Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 330MHz Supplier Device Package: 6-SCH |
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SFT1345-TL-H | onsemi |
Description: MOSFET P-CH 100V 11A TP-FA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 275mOhm @ 5.5A, 10V Power Dissipation (Max): 1W (Ta), 35W (Tc) Supplier Device Package: TP-FA Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V |
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SFT1445-TL-H | onsemi |
Description: MOSFET N-CH 100V 17A TP-FA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 111mOhm @ 8.5A, 10V Power Dissipation (Max): 1W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: TP-FA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V |
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В кошику од. на суму грн. | ||||||||||
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SFT1450-TL-H | onsemi |
Description: MOSFET N-CH 40V 21A TP-FA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 10.5A, 10V Power Dissipation (Max): 1W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: TP-FA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SM36T1G | onsemi |
Description: TVS DIODE 36VWM 60VC SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 60V Power - Peak Pulse: 300W Power Line Protection: No |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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SMMUN2211LT1G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SMUN5111DW1T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 385mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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SNUF6401MNT1G | onsemi |
Description: FILTER RC(PI) 100 OHMS ESD SMD Packaging: Tape & Reel (TR) Package / Case: 12-VFDFN Exposed Pad Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 105°C Values: R = 100Ohms, C = 17pF Height: 0.039" (1.00mm) Attenuation Value: -30dB @ 800MHz ~ 3GHz Filter Order: 2nd Technology: RC (Pi) Center / Cutoff Frequency: 110MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Part Status: Active Number of Channels: 6 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TND017SW-TL-E | onsemi |
Description: IC PWR DRIVER N-CHANNEL 1:1 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Rds On (Typ): 300mOhm Voltage - Load: 4V ~ 10V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOP Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage |
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TND315S-TL-E | onsemi |
Description: IC PWR DRIVER EXPD 1:2 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Rds On (Typ): 8Ohm Input Type: Non-Inverting Voltage - Load: 4.5V ~ 25V Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:2 Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
.jpg "TND322VD-TL-E") |
TND322VD-TL-E | onsemi |
Description: IC DVR EXPD 25V 0.8A VEC8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 25V Rds On (Typ): 11Ohm Current - Peak Output: 800mA Supplier Device Package: SOT-28FL/VEC8 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TND323VD-TL-E | onsemi |
Description: IC DVR EXPD 25V 0.8A VEC8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 25V Rds On (Typ): 11Ohm Current - Peak Output: 800mA Supplier Device Package: SOT-28FL/VEC8 Part Status: Obsolete |
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В кошику од. на суму грн. | ||||||||||
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VEC2415-TL-E | onsemi |
Description: MOSFET 2N-CH 60V 3A SOT28 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: SOT-28FL/VEC8 Part Status: Obsolete |
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В кошику од. на суму грн. | ||||||||||
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WPB4002 | onsemi |
Description: MOSFET N-CH 600V 23A TO3PB Packaging: Tray Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 360mOhm @ 11.5A, 10V Power Dissipation (Max): 2.5W (Ta), 220W (Tc) Supplier Device Package: TO-3PB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NVD5117PLT4G-VF01 | onsemi |
Description: MOSFET P-CH 60V 11A/61A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 10V Power Dissipation (Max): 4.1W (Ta), 118W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NVD5117PLT4G-VF01 | onsemi |
Description: MOSFET P-CH 60V 11A/61A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 10V Power Dissipation (Max): 4.1W (Ta), 118W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4095 шт: термін постачання 21-31 дні (днів) |
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DFB2540 | onsemi |
Description: BRIDGE RECT 1P 400V 25A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FAN156L6X | onsemi |
Description: IC COMPARATOR 1 GEN PUR 6MICROPK Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Output Type: Push-Pull, Rail-to-Rail Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V, ±0.8V ~ 2.75V Supplier Device Package: 6-MicroPak Propagation Delay (Max): 400ns (Typ) Current - Quiescent (Max): 17µA Voltage - Input Offset (Max): 15mV @ 5.5V Current - Input Bias (Max): 10pA @ 5.5V CMRR, PSRR (Typ): 68db CMRR, 80db PSRR Hysteresis: 4mV |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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| NTMFD4902NFT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 10.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W, 1.16W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Description: MOSFET 2N-CH 30V 10.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W, 1.16W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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| NTMFD4902NFT3G |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 10.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W, 1.16W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Description: MOSFET 2N-CH 30V 10.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W, 1.16W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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В кошику
од. на суму грн.
| NTMFS5830NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 28A/172A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 172A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V
Description: MOSFET N-CH 40V 28A/172A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 172A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V
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| NTSB20100CT-1G |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOT 100V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Description: DIODE ARRAY SCHOT 100V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
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| NTSB30100CT-1G |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOT 100V 15A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE ARRAY SCHOT 100V 15A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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| NTST20100CTG |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
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| NTST30100CTG |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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| NVF2955T1G |
|
Виробник: onsemi
Description: MOSFET P-CH 60V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 750mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 750mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 39.84 грн |
| 2000+ | 35.21 грн |
| NVTFS4824NTWG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 18.2A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.2A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 23A, 10V
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 12 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 18.2A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.2A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 23A, 10V
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 12 V
Qualification: AEC-Q101
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| RB520S30T5G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 0.93 грн |
| 16000+ | 0.85 грн |
| 24000+ | 0.81 грн |
| 40000+ | 0.71 грн |
| RB521S30T5G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 1.03 грн |
| 16000+ | 0.98 грн |
| RD0306T-H |
|
Виробник: onsemi
Description: DIODE STANDARD 600V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TP
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TP
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| REF3012TB-GT3 |
|
Виробник: onsemi
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
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| REF3020TB-GT3 |
|
Виробник: onsemi
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.048V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.048V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
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| REF3025TB-GT3 |
|
Виробник: onsemi
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
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| REF3030TB-GT3 |
|
Виробник: onsemi
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3V
Noise - 0.1Hz to 10Hz: 50µVp-p
Part Status: Obsolete
Current - Output: 10 mA
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| REF3033TB-GT3 |
|
Виробник: onsemi
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 0.1Hz to 10Hz: 50µVp-p
Current - Output: 10 mA
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 0.1Hz to 10Hz: 50µVp-p
Current - Output: 10 mA
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| REF3040TB-GT3 |
|
Виробник: onsemi
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 4.096V
Noise - 0.1Hz to 10Hz: 50µVp-p
Current - Output: 10 mA
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.7V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 30µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 4.096V
Noise - 0.1Hz to 10Hz: 50µVp-p
Current - Output: 10 mA
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| SB01-15C-TB-E |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 150V 100MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 75 V
Description: DIODE SCHOTTKY 150V 100MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 75 V
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| SB02-09C-TB-E |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 90V 200MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Description: DIODE SCHOTTKY 90V 200MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
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| SB05-03Q-TL-E |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 500MA 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-MCP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
Description: DIODE SCHOTTKY 30V 500MA 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-MCP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
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| SB05-05C-TB-E |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 500MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 25 V
Description: DIODE SCHOTTKY 50V 500MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.10 грн |
| 6000+ | 8.36 грн |
| SB05W05C-TB-E |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOT 50V 500MA 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOT 50V 500MA 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.31 грн |
| 6000+ | 12.55 грн |
| SB07-03C-TB-E |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 700MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Current - Reverse Leakage @ Vr: 80 µA @ 15 V
Description: DIODE SCHOTTKY 30V 700MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Current - Reverse Leakage @ Vr: 80 µA @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.15 грн |
| 6000+ | 9.80 грн |
| SB10-05P-TD-E |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 1A SOT89/PCP1
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 52pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-89/PCP-1
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 80 µA @ 25 V
Description: DIODE SCHOTTKY 50V 1A SOT89/PCP1
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 52pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-89/PCP-1
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 80 µA @ 25 V
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| SB20-03P-TD-E |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PCP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 15 V
Description: DIODE SCHOTTKY 30V 2A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PCP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 16.86 грн |
| 2000+ | 13.12 грн |
| 3000+ | 12.75 грн |
| 5000+ | 10.89 грн |
| SB80W06T-H |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 60V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TP
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE ARRAY SCHOTTKY 60V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TP
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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| SBA120-18J |
|
Виробник: onsemi
Description: DIODE ARR SCHOT 180V 12A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 6 A
Current - Reverse Leakage @ Vr: 300 µA @ 90 V
Description: DIODE ARR SCHOT 180V 12A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 6 A
Current - Reverse Leakage @ Vr: 300 µA @ 90 V
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| SBR100-10JS |
|
Виробник: onsemi
Description: DIODE ARR SCHOT 100V 10A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Description: DIODE ARR SCHOT 100V 10A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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| SBR200-10JS |
|
Виробник: onsemi
Description: DIODE ARR SCHOT 100V 20A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE ARR SCHOT 100V 20A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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| SBS817-TL-E |
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 15V 2A 8EMH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-EMH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 7.5 V
Description: DIODE ARRAY SCHOTTKY 15V 2A 8EMH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-EMH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 7.5 V
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| SBS818-TL-E |
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 30V 2A 8EMH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-EMH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 350 µA @ 15 V
Description: DIODE ARRAY SCHOTTKY 30V 2A 8EMH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-EMH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 350 µA @ 15 V
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| SBS822-TL-H |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 20V 5MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: 5-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Current - Reverse Leakage @ Vr: 110 µA @ 10 V
Description: DIODE ARRAY SCHOTTKY 20V 5MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: 5-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Current - Reverse Leakage @ Vr: 110 µA @ 10 V
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| SBT100-10G |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 3.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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| SBT100-16LS |
|
Виробник: onsemi
Description: DIODE ARR SCHOT 160V 10A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FI(LS)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 160 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 160 V
Description: DIODE ARR SCHOT 160V 10A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FI(LS)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 160 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 160 V
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| SBT150-04Y-DL-E |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOT 40V 15A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMP-FD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Description: DIODE ARRAY SCHOT 40V 15A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SMP-FD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
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| SBT250-04R |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 40V 25A TO3PML
Packaging: Tray
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-3PML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 20 V
Description: DIODE ARR SCHOTT 40V 25A TO3PML
Packaging: Tray
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-3PML
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 20 V
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| SBT80-06J |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 60V 8A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE ARR SCHOTT 60V 8A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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| SBT80-10J |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 8A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Description: DIODE ARR SCHOTT 100V 8A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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| SBT80-10JS |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 8A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Description: DIODE ARR SCHOTT 100V 8A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220ML
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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| SBT80-10Y-E |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOT 100V 8A SMP-FD
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: SMP-FD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Description: DIODE ARRAY SCHOT 100V 8A SMP-FD
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: SMP-FD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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| SCH1330-TL-H |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 1.5A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 241mOhm @ 750mA, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Description: MOSFET P-CH 20V 1.5A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 241mOhm @ 750mA, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
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| SCH2202-TL-E |
Виробник: onsemi
Description: TRANS 2NPN DUAL 15V 600MA 6-SCH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: 6-SCH
Description: TRANS 2NPN DUAL 15V 600MA 6-SCH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: 6-SCH
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| SFT1345-TL-H |
|
Виробник: onsemi
Description: MOSFET P-CH 100V 11A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 275mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta), 35W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V
Description: MOSFET P-CH 100V 11A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 275mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta), 35W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V
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| SFT1445-TL-H |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 17A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 111mOhm @ 8.5A, 10V
Power Dissipation (Max): 1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: TP-FA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Description: MOSFET N-CH 100V 17A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 111mOhm @ 8.5A, 10V
Power Dissipation (Max): 1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: TP-FA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
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| SFT1450-TL-H |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 21A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 20 V
Description: MOSFET N-CH 40V 21A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 20 V
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| SM36T1G |
|
Виробник: onsemi
Description: TVS DIODE 36VWM 60VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 60V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 36VWM 60VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 60V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.24 грн |
| 6000+ | 6.82 грн |
| 9000+ | 6.04 грн |
| SMMUN2211LT1G |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.33 грн |
| 6000+ | 2.00 грн |
| 9000+ | 1.87 грн |
| SMUN5111DW1T1G |
|
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.24 грн |
| 6000+ | 3.67 грн |
| 9000+ | 3.45 грн |
| 15000+ | 3.02 грн |
| SNUF6401MNT1G |
|
Виробник: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 105°C
Values: R = 100Ohms, C = 17pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Technology: RC (Pi)
Center / Cutoff Frequency: 110MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 105°C
Values: R = 100Ohms, C = 17pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Technology: RC (Pi)
Center / Cutoff Frequency: 110MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.09 грн |
| TND017SW-TL-E |
|
Виробник: onsemi
Description: IC PWR DRIVER N-CHANNEL 1:1 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 300mOhm
Voltage - Load: 4V ~ 10V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Description: IC PWR DRIVER N-CHANNEL 1:1 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 300mOhm
Voltage - Load: 4V ~ 10V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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| TND315S-TL-E |
|
Виробник: onsemi
Description: IC PWR DRIVER EXPD 1:2 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Typ): 8Ohm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 25V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP
Description: IC PWR DRIVER EXPD 1:2 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Typ): 8Ohm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 25V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP
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| TND322VD-TL-E |
Виробник: onsemi
Description: IC DVR EXPD 25V 0.8A VEC8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 11Ohm
Current - Peak Output: 800mA
Supplier Device Package: SOT-28FL/VEC8
Part Status: Obsolete
Description: IC DVR EXPD 25V 0.8A VEC8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 11Ohm
Current - Peak Output: 800mA
Supplier Device Package: SOT-28FL/VEC8
Part Status: Obsolete
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| TND323VD-TL-E |
Виробник: onsemi
Description: IC DVR EXPD 25V 0.8A VEC8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 11Ohm
Current - Peak Output: 800mA
Supplier Device Package: SOT-28FL/VEC8
Part Status: Obsolete
Description: IC DVR EXPD 25V 0.8A VEC8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 11Ohm
Current - Peak Output: 800mA
Supplier Device Package: SOT-28FL/VEC8
Part Status: Obsolete
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| VEC2415-TL-E |
Виробник: onsemi
Description: MOSFET 2N-CH 60V 3A SOT28
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-28FL/VEC8
Part Status: Obsolete
Description: MOSFET 2N-CH 60V 3A SOT28
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-28FL/VEC8
Part Status: Obsolete
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| WPB4002 |
Виробник: onsemi
Description: MOSFET N-CH 600V 23A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Description: MOSFET N-CH 600V 23A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
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| NVD5117PLT4G-VF01 |
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Виробник: onsemi
Description: MOSFET P-CH 60V 11A/61A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 10V
Power Dissipation (Max): 4.1W (Ta), 118W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 11A/61A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 10V
Power Dissipation (Max): 4.1W (Ta), 118W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 88.59 грн |
| NVD5117PLT4G-VF01 |
|
Виробник: onsemi
Description: MOSFET P-CH 60V 11A/61A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 10V
Power Dissipation (Max): 4.1W (Ta), 118W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 11A/61A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 10V
Power Dissipation (Max): 4.1W (Ta), 118W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4095 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 224.70 грн |
| 10+ | 148.36 грн |
| 100+ | 107.62 грн |
| 500+ | 84.14 грн |
| 1000+ | 80.06 грн |
| DFB2540 |
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Виробник: onsemi
Description: BRIDGE RECT 1P 400V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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| FAN156L6X |
|
Виробник: onsemi
Description: IC COMPARATOR 1 GEN PUR 6MICROPK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V, ±0.8V ~ 2.75V
Supplier Device Package: 6-MicroPak
Propagation Delay (Max): 400ns (Typ)
Current - Quiescent (Max): 17µA
Voltage - Input Offset (Max): 15mV @ 5.5V
Current - Input Bias (Max): 10pA @ 5.5V
CMRR, PSRR (Typ): 68db CMRR, 80db PSRR
Hysteresis: 4mV
Description: IC COMPARATOR 1 GEN PUR 6MICROPK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V, ±0.8V ~ 2.75V
Supplier Device Package: 6-MicroPak
Propagation Delay (Max): 400ns (Typ)
Current - Quiescent (Max): 17µA
Voltage - Input Offset (Max): 15mV @ 5.5V
Current - Input Bias (Max): 10pA @ 5.5V
CMRR, PSRR (Typ): 68db CMRR, 80db PSRR
Hysteresis: 4mV
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 16.68 грн |
| 10000+ | 15.04 грн |
| 15000+ | 14.53 грн |