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NGTB50N60FLWG NGTB50N60FLWG onsemi ngtb50n60flw-d.pdf Description: IGBT 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 116ns/292ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
товар відсутній
NGTB50N60L2WG NGTB50N60L2WG onsemi ngtb50n60l2w-d.pdf Description: IGBT 600V 50A TO247
товар відсутній
NGTB75N60FL2WG NGTB75N60FL2WG onsemi ngtb75n60fl2w-d.pdf Description: IGBT 600V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
товар відсутній
NGTB75N65FL2WG NGTB75N65FL2WG onsemi ngtb75n65fl2w-d.pdf Description: IGBT TRENCH FS 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
товар відсутній
NGTG50N60FLWG NGTG50N60FLWG onsemi NGTG50N60FLWG.pdf Description: IGBT 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 116ns/292ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
товар відсутній
NHPJ08S600G NHPJ08S600G onsemi NHPx08S600G.pdf Description: DIODE GP 600V 8A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
товар відсутній
NHPJ15S600G NHPJ15S600G onsemi nhpv15s600-d.pdf Description: DIODE GP 600V 15A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
товар відсутній
NHPV08S600G NHPV08S600G onsemi nhpv08s600-d.pdf Description: DIODE GEN PURP 600V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
на замовлення 489 шт:
термін постачання 21-31 дні (днів)
3+114.03 грн
10+ 98.14 грн
25+ 93.17 грн
100+ 67.14 грн
250+ 59.34 грн
Мінімальне замовлення: 3
NHPV15S600G NHPV15S600G onsemi nhpv15s600-d.pdf Description: DIODE GEN PURP 600V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
товар відсутній
NIS5232MN1TXG NIS5232MN1TXG onsemi nis5232-d.pdf Description: IC ELECTRONIC FUSE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 4.2A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
Part Status: Not For New Designs
товар відсутній
NJVMJD112G NJVMJD112G onsemi mjd112-d.pdf Description: TRANS NPN DARL 100V 2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
на замовлення 6771 шт:
термін постачання 21-31 дні (днів)
7+47.04 грн
75+ 37.11 грн
150+ 26.93 грн
525+ 21.12 грн
1050+ 17.97 грн
2025+ 16.01 грн
5025+ 14.92 грн
Мінімальне замовлення: 7
NJVMJD210T4G NJVMJD210T4G onsemi mjd200-d.pdf Description: TRANS PNP 25V 5A DPAK
товар відсутній
NJVMJD3055T4G NJVMJD3055T4G onsemi mjd2955-d.pdf Description: TRANS NPN 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+27.98 грн
Мінімальне замовлення: 2500
NJVMJD31CG NJVMJD31CG onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
8+40.62 грн
75+ 32.74 грн
150+ 23.76 грн
Мінімальне замовлення: 8
NJW44H11G NJW44H11G onsemi njw44h11-d.pdf Description: TRANS NPN 80V 10A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 4A, 2V
Frequency - Transition: 85MHz
Supplier Device Package: TO-3P-3L
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 120 W
на замовлення 1767 шт:
термін постачання 21-31 дні (днів)
2+191.72 грн
30+ 148.01 грн
120+ 121.78 грн
510+ 96.7 грн
1020+ 82.05 грн
Мінімальне замовлення: 2
NL17SH02P5T5G NL17SH02P5T5G onsemi nl17sh02-d.pdf Description: IC GATE NOR 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
NL17SZ02P5T5G NL17SZ02P5T5G onsemi nl17sz02-d.pdf Description: IC GATE NOR 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
NL17SZ07P5T5G NL17SZ07P5T5G onsemi nl17sz07-d.pdf Description: IC BUF NON-INVERT 5.5V SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: SOT-953
Part Status: Obsolete
товар відсутній
NL17SZ08P5T5G NL17SZ08P5T5G onsemi nl17sz08-d.pdf Description: IC GATE AND 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
NL17SZ14P5T5G NL17SZ14P5T5G onsemi nl17sz14-d.pdf Description: IC INVERT SCHMITT 1CH 1IN SOT953
товар відсутній
NL17SZ32P5T5G NL17SZ32P5T5G onsemi nl17sz32-d.pdf Description: IC GATE OR 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
NLSV4T240EDR2G NLSV4T240EDR2G onsemi nlsv4t240e-d.pdf Description: IC TRNSLTR UNIDIRECTIONAL 14SOIC
Packaging: Tape & Reel (TR)
Features: Over Voltage Protection, Power-Off Protection
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 14-SOIC
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Part Status: Active
Number of Circuits: 1
товар відсутній
NLSX0102FCT1G NLSX0102FCT1G onsemi nlsx0102-d.pdf Description: IC TRANSLATOR BIDIR 8FLIPCHIP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-XFBGA, FCBGA
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 8-FlipChip
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
товар відсутній
NLSX0102FCT2G NLSX0102FCT2G onsemi nlsx0102-d.pdf Description: IC TRNSLTR BIDIR 8FLIPCHIP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-XFBGA, FCBGA
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 8-FlipChip
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
товар відсутній
NLSX4302EBMUTCG NLSX4302EBMUTCG onsemi nlsx4302e-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 8UQFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UQFN (1.4x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 315000 шт:
термін постачання 21-31 дні (днів)
3000+31.35 грн
6000+ 29.06 грн
15000+ 28.15 грн
Мінімальне замовлення: 3000
NLV74HC238ADTR2G NLV74HC238ADTR2G onsemi mc74hc238a-d.pdf Description: IC DECODER/DEMUX 1X3:8 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
товар відсутній
NLVVHC1G132DFT2G NLVVHC1G132DFT2G onsemi mc74vhc1g132-d.pdf Description: IC GATE NAND 1CH 2-INP SC88A
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 2.25V ~ 3.7V
Input Logic Level - Low: 0.65V ~ 1.45V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+3.97 грн
6000+ 3.32 грн
Мінімальне замовлення: 3000
NLVVHC1G132DTT1G NLVVHC1G132DTT1G onsemi mc74vhc1g132-d.pdf Description: IC GATE NAND 1CH 2IN 5TSOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-TSOP
Input Logic Level - High: 2.25V ~ 3.7V
Input Logic Level - Low: 0.65V ~ 1.45V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
NLVVHC1G86DTT1G NLVVHC1G86DTT1G onsemi mc74vhc1g86-d.pdf Description: IC GATE XOR 1CH 2-INP 5TSOP
товар відсутній
NRVB10100MFST1G NRVB10100MFST1G onsemi mbr10100mfs-d.pdf Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+26.53 грн
3000+ 24.05 грн
Мінімальне замовлення: 1500
NRVB10100MFST3G NRVB10100MFST3G onsemi mbr10100mfs-d.pdf Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
NRVB440MFST3G onsemi mbr440mfs-d.pdf Description: DIODE SCHOTTKY 40V 4A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
товар відсутній
NRVB440MFSWFT1G onsemi mbr440mfs-d.pdf Description: DIODE SCHOTTKY 40V 4A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+17.32 грн
Мінімальне замовлення: 1500
NRVB440MFSWFT3G onsemi mbr440mfs-d.pdf Description: DIODE SCHOTTKY 40V 4A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
5000+14.62 грн
10000+ 13.55 грн
25000+ 13.03 грн
Мінімальне замовлення: 5000
NRVB5100MFST1G NRVB5100MFST1G onsemi mbr5100mfs-d.pdf Description: DIODE SCHOTTKY 100V 5A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
NRVB540MFST1G NRVB540MFST1G onsemi mbr540mfs-d.pdf Description: DIODE SCHOTTKY 40V 5A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
1500+15.83 грн
3000+ 13.62 грн
Мінімальне замовлення: 1500
NRVB8H100MFST3G NRVB8H100MFST3G onsemi mbr8h100mfs-d.pdf Description: DIODE SCHOTTKY 100V 8A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
NRVBB41H100CTT4G NRVBB41H100CTT4G onsemi mbr41h100ct-d.pdf Description: DIODE ARRAY GP 100V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D²PAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
NRVBM120ET3G NRVBM120ET3G onsemi mbrm120e-d.pdf Description: DIODE SCHOTTKY 20V 1A POWERMITE
товар відсутній
NRVBM120LT3G NRVBM120LT3G onsemi mbrm120l-d.pdf Description: DIODE SCHOTTKY 20V 1A POWERMITE
товар відсутній
NRVBM2H100T3G NRVBM2H100T3G onsemi MBRM2H100-D.PDF Description: DIODE SCHOTTKY 100V 2A POWERMITE
товар відсутній
NRVBS260T3G-VF01 NRVBS260T3G-VF01 onsemi mbrs260t3-d.pdf Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товар відсутній
NRVBSS24T3G NRVBSS24T3G onsemi ss24-d.pdf Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
NSBA113EDXV6T1G NSBA113EDXV6T1G onsemi dta113ed-d.pdf Description: TRANS 2PNP PREBIAS 0.25W SOT563
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
товар відсутній
NSBA124XDXV6T1G NSBA124XDXV6T1G onsemi dta124xd-d.pdf Description: TRANS 2PNP PREBIAS 0.5W SOT563
товар відсутній
NSBA144TF3T5G NSBA144TF3T5G onsemi dta144t-d.pdf Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 47 kOhms
товар відсутній
NSBC113EPDXV6T1G NSBC113EPDXV6T1G onsemi dtc113ep-d.pdf Description: TRANS PREBIAS NPN/PNP SOT563
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
NSBC143TF3T5G NSBC143TF3T5G onsemi dtc143t-d.pdf Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 4.7 kOhms
товар відсутній
NSBC143ZDXV6T5G NSBC143ZDXV6T5G onsemi dtc143zd-d.pdf Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
товар відсутній
NSBC144TF3T5G NSBC144TF3T5G onsemi dtc144t-d.pdf Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 47 kOhms
товар відсутній
NSBC144WDXV6T1G NSBC144WDXV6T1G onsemi dtc144wd-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
товар відсутній
NSR0115CQP6T5G NSR0115CQP6T5G onsemi nsr0115cqp6-d.pdf Description: DIODE ARR SCHOT 15V 100MA SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-963
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA
Current - Reverse Leakage @ Vr: 15 µA @ 10 V
товар відсутній
NSR01F30MXT5G NSR01F30MXT5G onsemi nsr01f30mx-d.pdf Description: DIODE SCHOTTKY 30V 100MA 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.9pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 240000 шт:
термін постачання 21-31 дні (днів)
10000+4.02 грн
30000+ 3.8 грн
50000+ 3.15 грн
Мінімальне замовлення: 10000
NSR0240V2T5G NSR0240V2T5G onsemi nsr0240v2t1-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
8000+4.92 грн
16000+ 4.1 грн
24000+ 4.02 грн
56000+ 3.12 грн
Мінімальне замовлення: 8000
NSR20F40NXT5G NSR20F40NXT5G onsemi nsr20f40-d.pdf Description: DIODE SCHOTTKY 40V 2A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8), (0603)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
5000+12.99 грн
10000+ 11.62 грн
25000+ 11.35 грн
Мінімальне замовлення: 5000
NSS1C300ET4G NSS1C300ET4G onsemi nss1c300e-d.pdf Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
2500+23.64 грн
5000+ 21.68 грн
12500+ 20.68 грн
Мінімальне замовлення: 2500
NSS1C301ET4G NSS1C301ET4G onsemi nss1c301e-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+16.1 грн
5000+ 14.69 грн
Мінімальне замовлення: 2500
NSV1C201LT1G NSV1C201LT1G onsemi nss1c201l-d.pdf Description: TRANS NPN 100V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 490 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+12.42 грн
6000+ 11.35 грн
9000+ 10.54 грн
Мінімальне замовлення: 3000
NSV1C201MZ4T1G NSV1C201MZ4T1G onsemi nss1c201mz4-d.pdf Description: TRANS NPN 100V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+15.38 грн
2000+ 13.24 грн
Мінімальне замовлення: 1000
NSV1C301ET4G-VF01 NSV1C301ET4G-VF01 onsemi nss1c301e-d.pdf Description: TRANS NPN 100V 3A 3DPAK
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
NGTB50N60FLWG ngtb50n60flw-d.pdf
NGTB50N60FLWG
Виробник: onsemi
Description: IGBT 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 116ns/292ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
товар відсутній
NGTB50N60L2WG ngtb50n60l2w-d.pdf
NGTB50N60L2WG
Виробник: onsemi
Description: IGBT 600V 50A TO247
товар відсутній
NGTB75N60FL2WG ngtb75n60fl2w-d.pdf
NGTB75N60FL2WG
Виробник: onsemi
Description: IGBT 600V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
товар відсутній
NGTB75N65FL2WG ngtb75n65fl2w-d.pdf
NGTB75N65FL2WG
Виробник: onsemi
Description: IGBT TRENCH FS 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
товар відсутній
NGTG50N60FLWG NGTG50N60FLWG.pdf
NGTG50N60FLWG
Виробник: onsemi
Description: IGBT 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 116ns/292ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
товар відсутній
NHPJ08S600G NHPx08S600G.pdf
NHPJ08S600G
Виробник: onsemi
Description: DIODE GP 600V 8A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
товар відсутній
NHPJ15S600G nhpv15s600-d.pdf
NHPJ15S600G
Виробник: onsemi
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
товар відсутній
NHPV08S600G nhpv08s600-d.pdf
NHPV08S600G
Виробник: onsemi
Description: DIODE GEN PURP 600V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
на замовлення 489 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+114.03 грн
10+ 98.14 грн
25+ 93.17 грн
100+ 67.14 грн
250+ 59.34 грн
Мінімальне замовлення: 3
NHPV15S600G nhpv15s600-d.pdf
NHPV15S600G
Виробник: onsemi
Description: DIODE GEN PURP 600V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
товар відсутній
NIS5232MN1TXG nis5232-d.pdf
NIS5232MN1TXG
Виробник: onsemi
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 4.2A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
Part Status: Not For New Designs
товар відсутній
NJVMJD112G mjd112-d.pdf
NJVMJD112G
Виробник: onsemi
Description: TRANS NPN DARL 100V 2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
на замовлення 6771 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+47.04 грн
75+ 37.11 грн
150+ 26.93 грн
525+ 21.12 грн
1050+ 17.97 грн
2025+ 16.01 грн
5025+ 14.92 грн
Мінімальне замовлення: 7
NJVMJD210T4G mjd200-d.pdf
NJVMJD210T4G
Виробник: onsemi
Description: TRANS PNP 25V 5A DPAK
товар відсутній
NJVMJD3055T4G mjd2955-d.pdf
NJVMJD3055T4G
Виробник: onsemi
Description: TRANS NPN 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+27.98 грн
Мінімальне замовлення: 2500
NJVMJD31CG mjd31-d.pdf
NJVMJD31CG
Виробник: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+40.62 грн
75+ 32.74 грн
150+ 23.76 грн
Мінімальне замовлення: 8
NJW44H11G njw44h11-d.pdf
NJW44H11G
Виробник: onsemi
Description: TRANS NPN 80V 10A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 4A, 2V
Frequency - Transition: 85MHz
Supplier Device Package: TO-3P-3L
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 120 W
на замовлення 1767 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+191.72 грн
30+ 148.01 грн
120+ 121.78 грн
510+ 96.7 грн
1020+ 82.05 грн
Мінімальне замовлення: 2
NL17SH02P5T5G nl17sh02-d.pdf
NL17SH02P5T5G
Виробник: onsemi
Description: IC GATE NOR 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
NL17SZ02P5T5G nl17sz02-d.pdf
NL17SZ02P5T5G
Виробник: onsemi
Description: IC GATE NOR 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
NL17SZ07P5T5G nl17sz07-d.pdf
NL17SZ07P5T5G
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: SOT-953
Part Status: Obsolete
товар відсутній
NL17SZ08P5T5G nl17sz08-d.pdf
NL17SZ08P5T5G
Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
NL17SZ14P5T5G nl17sz14-d.pdf
NL17SZ14P5T5G
Виробник: onsemi
Description: IC INVERT SCHMITT 1CH 1IN SOT953
товар відсутній
NL17SZ32P5T5G nl17sz32-d.pdf
NL17SZ32P5T5G
Виробник: onsemi
Description: IC GATE OR 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
NLSV4T240EDR2G nlsv4t240e-d.pdf
NLSV4T240EDR2G
Виробник: onsemi
Description: IC TRNSLTR UNIDIRECTIONAL 14SOIC
Packaging: Tape & Reel (TR)
Features: Over Voltage Protection, Power-Off Protection
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 14-SOIC
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Part Status: Active
Number of Circuits: 1
товар відсутній
NLSX0102FCT1G nlsx0102-d.pdf
NLSX0102FCT1G
Виробник: onsemi
Description: IC TRANSLATOR BIDIR 8FLIPCHIP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-XFBGA, FCBGA
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 8-FlipChip
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
товар відсутній
NLSX0102FCT2G nlsx0102-d.pdf
NLSX0102FCT2G
Виробник: onsemi
Description: IC TRNSLTR BIDIR 8FLIPCHIP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-XFBGA, FCBGA
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 8-FlipChip
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
товар відсутній
NLSX4302EBMUTCG nlsx4302e-d.pdf
NLSX4302EBMUTCG
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UQFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UQFN (1.4x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 315000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+31.35 грн
6000+ 29.06 грн
15000+ 28.15 грн
Мінімальне замовлення: 3000
NLV74HC238ADTR2G mc74hc238a-d.pdf
NLV74HC238ADTR2G
Виробник: onsemi
Description: IC DECODER/DEMUX 1X3:8 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
товар відсутній
NLVVHC1G132DFT2G mc74vhc1g132-d.pdf
NLVVHC1G132DFT2G
Виробник: onsemi
Description: IC GATE NAND 1CH 2-INP SC88A
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 2.25V ~ 3.7V
Input Logic Level - Low: 0.65V ~ 1.45V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+3.97 грн
6000+ 3.32 грн
Мінімальне замовлення: 3000
NLVVHC1G132DTT1G mc74vhc1g132-d.pdf
NLVVHC1G132DTT1G
Виробник: onsemi
Description: IC GATE NAND 1CH 2IN 5TSOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-TSOP
Input Logic Level - High: 2.25V ~ 3.7V
Input Logic Level - Low: 0.65V ~ 1.45V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
NLVVHC1G86DTT1G mc74vhc1g86-d.pdf
NLVVHC1G86DTT1G
Виробник: onsemi
Description: IC GATE XOR 1CH 2-INP 5TSOP
товар відсутній
NRVB10100MFST1G mbr10100mfs-d.pdf
NRVB10100MFST1G
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+26.53 грн
3000+ 24.05 грн
Мінімальне замовлення: 1500
NRVB10100MFST3G mbr10100mfs-d.pdf
NRVB10100MFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
NRVB440MFST3G mbr440mfs-d.pdf
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 4A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
товар відсутній
NRVB440MFSWFT1G mbr440mfs-d.pdf
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 4A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+17.32 грн
Мінімальне замовлення: 1500
NRVB440MFSWFT3G mbr440mfs-d.pdf
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 4A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+14.62 грн
10000+ 13.55 грн
25000+ 13.03 грн
Мінімальне замовлення: 5000
NRVB5100MFST1G mbr5100mfs-d.pdf
NRVB5100MFST1G
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 5A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
NRVB540MFST1G mbr540mfs-d.pdf
NRVB540MFST1G
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 5A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+15.83 грн
3000+ 13.62 грн
Мінімальне замовлення: 1500
NRVB8H100MFST3G mbr8h100mfs-d.pdf
NRVB8H100MFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 8A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
NRVBB41H100CTT4G mbr41h100ct-d.pdf
NRVBB41H100CTT4G
Виробник: onsemi
Description: DIODE ARRAY GP 100V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D²PAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
NRVBM120ET3G mbrm120e-d.pdf
NRVBM120ET3G
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A POWERMITE
товар відсутній
NRVBM120LT3G mbrm120l-d.pdf
NRVBM120LT3G
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A POWERMITE
товар відсутній
NRVBM2H100T3G MBRM2H100-D.PDF
NRVBM2H100T3G
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 2A POWERMITE
товар відсутній
NRVBS260T3G-VF01 mbrs260t3-d.pdf
NRVBS260T3G-VF01
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товар відсутній
NRVBSS24T3G ss24-d.pdf
NRVBSS24T3G
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
NSBA113EDXV6T1G dta113ed-d.pdf
NSBA113EDXV6T1G
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.25W SOT563
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
товар відсутній
NSBA124XDXV6T1G dta124xd-d.pdf
NSBA124XDXV6T1G
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
товар відсутній
NSBA144TF3T5G dta144t-d.pdf
NSBA144TF3T5G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 47 kOhms
товар відсутній
NSBC113EPDXV6T1G dtc113ep-d.pdf
NSBC113EPDXV6T1G
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP SOT563
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
NSBC143TF3T5G dtc143t-d.pdf
NSBC143TF3T5G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 4.7 kOhms
товар відсутній
NSBC143ZDXV6T5G dtc143zd-d.pdf
NSBC143ZDXV6T5G
Виробник: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
товар відсутній
NSBC144TF3T5G dtc144t-d.pdf
NSBC144TF3T5G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 47 kOhms
товар відсутній
NSBC144WDXV6T1G dtc144wd-d.pdf
NSBC144WDXV6T1G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
товар відсутній
NSR0115CQP6T5G nsr0115cqp6-d.pdf
NSR0115CQP6T5G
Виробник: onsemi
Description: DIODE ARR SCHOT 15V 100MA SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-963
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA
Current - Reverse Leakage @ Vr: 15 µA @ 10 V
товар відсутній
NSR01F30MXT5G nsr01f30mx-d.pdf
NSR01F30MXT5G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 100MA 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.9pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 240000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+4.02 грн
30000+ 3.8 грн
50000+ 3.15 грн
Мінімальне замовлення: 10000
NSR0240V2T5G nsr0240v2t1-d.pdf
NSR0240V2T5G
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8000+4.92 грн
16000+ 4.1 грн
24000+ 4.02 грн
56000+ 3.12 грн
Мінімальне замовлення: 8000
NSR20F40NXT5G nsr20f40-d.pdf
NSR20F40NXT5G
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8), (0603)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+12.99 грн
10000+ 11.62 грн
25000+ 11.35 грн
Мінімальне замовлення: 5000
NSS1C300ET4G nss1c300e-d.pdf
NSS1C300ET4G
Виробник: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+23.64 грн
5000+ 21.68 грн
12500+ 20.68 грн
Мінімальне замовлення: 2500
NSS1C301ET4G nss1c301e-d.pdf
NSS1C301ET4G
Виробник: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+16.1 грн
5000+ 14.69 грн
Мінімальне замовлення: 2500
NSV1C201LT1G nss1c201l-d.pdf
NSV1C201LT1G
Виробник: onsemi
Description: TRANS NPN 100V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 490 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+12.42 грн
6000+ 11.35 грн
9000+ 10.54 грн
Мінімальне замовлення: 3000
NSV1C201MZ4T1G nss1c201mz4-d.pdf
NSV1C201MZ4T1G
Виробник: onsemi
Description: TRANS NPN 100V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+15.38 грн
2000+ 13.24 грн
Мінімальне замовлення: 1000
NSV1C301ET4G-VF01 nss1c301e-d.pdf
NSV1C301ET4G-VF01
Виробник: onsemi
Description: TRANS NPN 100V 3A 3DPAK
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
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