| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MJE15029G | ONSEMI |
 Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 8A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 30MHz |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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MMBTA42 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.24W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||
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74ACT14SCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Kind of input: with Schmitt trigger Family: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Quiescent current: 40µA Number of inputs: 1 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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74ACT14MTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Kind of input: with Schmitt trigger Family: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Number of inputs: 1 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2SC4135T-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 2A; 1W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Collector-emitter voltage: 100V Power dissipation: 1W Polarisation: bipolar Type of transistor: NPN Current gain: 200...400 Frequency: 120MHz Collector current: 2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| NCP167AMX330TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 700mA; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.29V Output voltage: 3.3V Output current: 0.7A Case: XDFN4 Mounting: SMD Manufacturer series: NCP167 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||
| NCP167AMX180TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 700mA; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.45V Output voltage: 1.8V Output current: 0.7A Case: XDFN4 Mounting: SMD Manufacturer series: NCP167 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| ADP3211AMNR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; QFN32; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Mounting: SMD Case: QFN32 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NCP171AMX165160TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.65V; 80mA; XDFN4; SMD Type of integrated circuit: voltage regulator Mounting: SMD Case: XDFN4 Operating temperature: -40...85°C Output current: 80mA Output voltage: 1.65V Number of channels: 1 Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP171 Input voltage: 1.7...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NCP171AMX180175TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 80mA; XDFN4; SMD Type of integrated circuit: voltage regulator Mounting: SMD Case: XDFN4 Operating temperature: -40...85°C Output current: 80mA Voltage drop: 0.11V Output voltage: 1.8V Number of channels: 1 Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP171 Input voltage: 1.7...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NCP171AMX330310TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; XDFN4; SMD Type of integrated circuit: voltage regulator Mounting: SMD Case: XDFN4 Operating temperature: -40...85°C Output current: 80mA Voltage drop: 55mV Output voltage: 3.3V Number of channels: 1 Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP171 Input voltage: 1.7...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NTLUS030N03CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.9A Power dissipation: 1.49W Case: uDFN6 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 20A Gate charge: 3.7nC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| MBR2045MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SMD; 45V; 20A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 20A Semiconductor structure: single diode Case: DFN5x6 Max. forward voltage: 0.61V Max. forward impulse current: 0.4kA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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FQA40N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN Mounting: THT Pulsed drain current: 160A Power dissipation: 280W Gate charge: 110nC Polarisation: unipolar Drain current: 25A Kind of channel: enhancement Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO3PN On-state resistance: 70mΩ |
на замовлення 206 шт: термін постачання 14-30 дні (днів) |
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BSS138 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2.4nC Features of semiconductor devices: logic level |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||
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MMBT2222A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 1W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||
| N24C02UDTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 1.6...5.5V Mounting: SMD Case: US8 Kind of interface: serial Clock frequency: 1MHz Kind of package: reel; tape Access time: 450ns Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| N24C02UVTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 1.6...5.5V Mounting: SMD Case: US8 Kind of interface: serial Clock frequency: 1MHz Kind of package: reel; tape Access time: 450ns Operating temperature: -40...125°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| CAV24C02WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: SOIC8 Kind of interface: serial Clock frequency: 400kHz Kind of package: reel; tape Access time: 900ns Operating temperature: -40...125°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| CAV24C02YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: TSSOP8 Kind of interface: serial Clock frequency: 400kHz Kind of package: reel; tape Access time: 900ns Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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74VHC00MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Family: VHC Operating temperature: -40...85°C Quiescent current: 20µA Kind of package: reel; tape Supply voltage: 2...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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HCPL0501 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 15-30%@16mA Transfer rate: 1Mbps Case: SO8 Turn-on time: 450ns Turn-off time: 0.3µs Slew rate: 15kV/μs |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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HCPL0501R2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 15-30%@16mA Transfer rate: 1Mbps Case: SO8 Turn-on time: 450ns Turn-off time: 0.3µs Slew rate: 15kV/μs |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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GBU8KS | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| FDMF5062 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: driver; high-side; PQFN; MOSFET; Uoper: 30V; Usup: 5÷12V Type of integrated circuit: driver Kind of integrated circuit: high-side Case: PQFN Supply voltage: 5...12V Mounting: SMD Integrated circuit features: MOSFET Operating voltage: 30V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
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MUR460 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3A; DO27; bulk; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Case: DO27 Forward voltage at If: 1.25V Kind of package: bulk Max. load current: 4A Reverse recovery time: 50ns |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||
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FDC6306P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.9A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.9A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.27Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4.2nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FDC640P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 80mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 13nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FDC6310P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 184mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FDC6329L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6 Case: SuperSOT-6 On-state resistance: 0.105Ω Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: high-side Number of channels: 1 Supply voltage: 2.5...8V DC Control voltage: 1.5...8V DC Output current: 2.5A Type of integrated circuit: power switch Kind of output: P-Channel |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| FDC642P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Power dissipation: 1.2W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.105Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| FDC654P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 0.115Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| FDC6320C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 25/-25V Drain current: 0.22/-0.12A Power dissipation: 0.9W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 9/10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| FDC6326L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6 Case: SuperSOT-6 On-state resistance: 0.125Ω Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: high-side Number of channels: 1 Supply voltage: 3...20V DC Control voltage: 2.5...8V DC Output current: 1.8A Type of integrated circuit: power switch Kind of output: P-Channel |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| NTGS4111PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Power dissipation: 1.25W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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NRVBBS20100CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape Max. forward impulse current: 150A Max. forward voltage: 0.95V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 10A x2 Max. load current: 20A Kind of package: reel; tape Semiconductor structure: common cathode; double Case: D2PAK Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| NCS2202AMUTBG | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; uDFN6; 1pA Kind of comparator: low-power Delay time: 1.08µs Mounting: SMT Input offset voltage: 10mV Type of integrated circuit: comparator Kind of output: open drain Operating temperature: -40...105°C Number of comparators: 1 Input bias current: 1pA Application: automotive industry Kind of package: reel; tape Case: uDFN6 Operating voltage: 0.85...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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QED223 | ONSEMI |
Category: IR LEDs Description: IR transmitter; 5mm; 880nm; diffused,violet; 25mW; 30°; 1.7VDC Type of diode: IR transmitter LED lens: diffused; violet Wavelength: 880nm Viewing angle: 30° Mounting: THT Operating voltage: 1.7V DC LED current: 100mA Radiant power: 25mW Wavelength of peak sensitivity: 890nm Shape: round LED diameter: 5mm |
на замовлення 82 шт: термін постачання 14-30 дні (днів) |
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FDB2710 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 260W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 36.3mΩ Mounting: SMD Gate charge: 101nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 771 шт: термін постачання 14-30 дні (днів) |
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MMBTA06LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
| FDMQ8205 | ONSEMI |
Category: Integrated circuits - others Description: IC: driver; single phase transistor bridge; ideal diode bridge Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: driver Technology: GreenBridge™ 2 Kind of package: reel; tape Case: WDFN12 Kind of integrated circuit: ideal diode bridge Topology: single phase transistor bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| FDMQ8403 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12 Mounting: SMD Pulsed drain current: 12A Power dissipation: 17W Gate charge: 5nC Polarisation: unipolar Drain current: 6A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET x4 Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN12 On-state resistance: 191mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NCP4307FBSNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC Type of integrated circuit: PMIC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NCV21874DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 350kHz; Ch: 4; 1.8÷5.5VDC; SO14; 0.045mV Type of integrated circuit: operational amplifier Bandwidth: 350kHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: 1.8...5.5V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.1V/μs Integrated circuit features: rail-to-rail; zero-drift Input offset voltage: 0.045mV Kind of package: reel; tape Input bias current: 0.4nA Input offset current: 800pA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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SZ1SMA5920BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 6.2V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SZ1SMA5919BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 5.6V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||
| NTMJS0D7N03CGTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 410A; Idm: 900A; 188W; LFPAK8 Mounting: SMD Pulsed drain current: 900A Power dissipation: 188W Gate charge: 147nC Polarisation: unipolar Drain current: 410A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK8 On-state resistance: 0.65mΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
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NTB6410ANT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; D2PAK Mounting: SMD Pulsed drain current: 305A Power dissipation: 188W Gate charge: 0.12µC Polarisation: unipolar Drain current: 76A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK On-state resistance: 13mΩ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
 |
NTP6410ANG | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; TO220-3 Mounting: THT Pulsed drain current: 305A Power dissipation: 188W Gate charge: 0.12µC Polarisation: unipolar Drain current: 76A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO220-3 On-state resistance: 13mΩ |
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В кошику од. на суму грн. | ||||||||||
|
|
FQP4N20L | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 45W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.4A Pulsed drain current: 15.2A Power dissipation: 45W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Gate charge: 5.2nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||
|
|
FDP032N08B-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3 Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 3.3mΩ Mounting: THT Pulsed drain current: 844A Power dissipation: 263W Gate charge: 111nC Polarisation: unipolar Drain current: 211A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET |
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| MC74ACT573DWG | ONSEMI |
Category: Latches Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Family: ACT Kind of output: 3-state Kind of package: tube Manufacturer series: ACT Technology: TTL |
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В кошику од. на суму грн. | |||||||||||
 |
MC74ACT573DTR2G | ONSEMI |
Category: Latches Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Supply voltage: 4.5...5.5V DC Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Family: ACT Kind of output: 3-state Kind of package: reel; tape Manufacturer series: ACT Technology: TTL |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
| MC74ACT573DWR2G | ONSEMI |
Category: Latches Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Family: ACT Kind of output: 3-state Kind of package: reel; tape Manufacturer series: ACT Technology: TTL |
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 |
FCD3400N80Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK Mounting: SMD Pulsed drain current: 4A Power dissipation: 32W Gate charge: 9.6nC Polarisation: unipolar Drain current: 1.2A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 3.4Ω |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| MJE15029G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 181.54 грн |
| 4+ | 136.70 грн |
| 10+ | 93.93 грн |
| MMBTA42 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
товару немає в наявності
Мінімальне замовлення: 10 шт
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од. на суму грн.
| 74ACT14SCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
Kind of package: reel; tape
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| 74ACT14MTC |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Kind of input: with Schmitt trigger
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Number of inputs: 1
Kind of package: tube
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Kind of input: with Schmitt trigger
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Number of inputs: 1
Kind of package: tube
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| 2SC4135T-TL-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Collector-emitter voltage: 100V
Power dissipation: 1W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...400
Frequency: 120MHz
Collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Collector-emitter voltage: 100V
Power dissipation: 1W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...400
Frequency: 120MHz
Collector current: 2A
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| NCP167AMX330TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 3.3V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 3.3V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
товару немає в наявності
Мінімальне замовлення: 5000 шт
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од. на суму грн.
| NCP167AMX180TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 1.8V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 1.8V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
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| ADP3211AMNR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; QFN32; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; QFN32; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
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| NCP171AMX165160TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.65V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Output voltage: 1.65V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.65V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Output voltage: 1.65V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
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| NCP171AMX180175TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Voltage drop: 0.11V
Output voltage: 1.8V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Voltage drop: 0.11V
Output voltage: 1.8V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
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| NCP171AMX330310TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Voltage drop: 55mV
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Voltage drop: 55mV
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
Input voltage: 1.7...5.5V
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| NTLUS030N03CTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 3.7nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 3.7nC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| MBR2045MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Case: DFN5x6
Max. forward voltage: 0.61V
Max. forward impulse current: 0.4kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Case: DFN5x6
Max. forward voltage: 0.61V
Max. forward impulse current: 0.4kA
Kind of package: reel; tape
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| FQA40N25 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Mounting: THT
Pulsed drain current: 160A
Power dissipation: 280W
Gate charge: 110nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO3PN
On-state resistance: 70mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Mounting: THT
Pulsed drain current: 160A
Power dissipation: 280W
Gate charge: 110nC
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO3PN
On-state resistance: 70mΩ
на замовлення 206 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 332.36 грн |
| 5+ | 230.63 грн |
| 10+ | 195.41 грн |
| 30+ | 188.70 грн |
| BSS138 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
Features of semiconductor devices: logic level
товару немає в наявності
Мінімальне замовлення: 10 шт
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| MMBT2222A |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
Мінімальне замовлення: 10 шт
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од. на суму грн.
| N24C02UDTG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Mounting: SMD
Case: US8
Kind of interface: serial
Clock frequency: 1MHz
Kind of package: reel; tape
Access time: 450ns
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Mounting: SMD
Case: US8
Kind of interface: serial
Clock frequency: 1MHz
Kind of package: reel; tape
Access time: 450ns
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| N24C02UVTG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Mounting: SMD
Case: US8
Kind of interface: serial
Clock frequency: 1MHz
Kind of package: reel; tape
Access time: 450ns
Operating temperature: -40...125°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Mounting: SMD
Case: US8
Kind of interface: serial
Clock frequency: 1MHz
Kind of package: reel; tape
Access time: 450ns
Operating temperature: -40...125°C
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Мінімальне замовлення: 3000 шт
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| CAV24C02WE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Clock frequency: 400kHz
Kind of package: reel; tape
Access time: 900ns
Operating temperature: -40...125°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Clock frequency: 400kHz
Kind of package: reel; tape
Access time: 900ns
Operating temperature: -40...125°C
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| CAV24C02YE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Clock frequency: 400kHz
Kind of package: reel; tape
Access time: 900ns
Operating temperature: -40...125°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Clock frequency: 400kHz
Kind of package: reel; tape
Access time: 900ns
Operating temperature: -40...125°C
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| 74VHC00MTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: VHC
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: VHC
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
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Мінімальне замовлення: 2500 шт
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| HCPL0501 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
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Мінімальне замовлення: 3000 шт
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| HCPL0501R2 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; CTR@If: 15-30%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 15-30%@16mA
Transfer rate: 1Mbps
Case: SO8
Turn-on time: 450ns
Turn-off time: 0.3µs
Slew rate: 15kV/μs
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Мінімальне замовлення: 2500 шт
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| GBU8KS |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| FDMF5062 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; high-side; PQFN; MOSFET; Uoper: 30V; Usup: 5÷12V
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: PQFN
Supply voltage: 5...12V
Mounting: SMD
Integrated circuit features: MOSFET
Operating voltage: 30V
Category: Power switches - integrated circuits
Description: IC: driver; high-side; PQFN; MOSFET; Uoper: 30V; Usup: 5÷12V
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: PQFN
Supply voltage: 5...12V
Mounting: SMD
Integrated circuit features: MOSFET
Operating voltage: 30V
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Мінімальне замовлення: 3000 шт
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| MUR460 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO27; bulk; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Case: DO27
Forward voltage at If: 1.25V
Kind of package: bulk
Max. load current: 4A
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; DO27; bulk; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Case: DO27
Forward voltage at If: 1.25V
Kind of package: bulk
Max. load current: 4A
Reverse recovery time: 50ns
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Мінімальне замовлення: 3 шт
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| FDC6306P |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.9A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.2nC
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.9A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.2nC
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| FDC640P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
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| FDC6310P |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 184mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 184mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDC6329L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 2.5...8V DC
Control voltage: 1.5...8V DC
Output current: 2.5A
Type of integrated circuit: power switch
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 2.5...8V DC
Control voltage: 1.5...8V DC
Output current: 2.5A
Type of integrated circuit: power switch
Kind of output: P-Channel
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Мінімальне замовлення: 3000 шт
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| FDC642P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| FDC654P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| FDC6320C |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 9/10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 9/10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| FDC6326L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 3...20V DC
Control voltage: 2.5...8V DC
Output current: 1.8A
Type of integrated circuit: power switch
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 3...20V DC
Control voltage: 2.5...8V DC
Output current: 1.8A
Type of integrated circuit: power switch
Kind of output: P-Channel
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Мінімальне замовлення: 3000 шт
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| NTGS4111PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Power dissipation: 1.25W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Power dissipation: 1.25W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| NRVBBS20100CTT4G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 10A x2
Max. load current: 20A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 10A x2
Max. load current: 20A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Mounting: SMD
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| NCS2202AMUTBG |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; uDFN6; 1pA
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Operating temperature: -40...105°C
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: uDFN6
Operating voltage: 0.85...6V
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; uDFN6; 1pA
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Operating temperature: -40...105°C
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: uDFN6
Operating voltage: 0.85...6V
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| QED223 |
|
Виробник: ONSEMI
Category: IR LEDs
Description: IR transmitter; 5mm; 880nm; diffused,violet; 25mW; 30°; 1.7VDC
Type of diode: IR transmitter
LED lens: diffused; violet
Wavelength: 880nm
Viewing angle: 30°
Mounting: THT
Operating voltage: 1.7V DC
LED current: 100mA
Radiant power: 25mW
Wavelength of peak sensitivity: 890nm
Shape: round
LED diameter: 5mm
Category: IR LEDs
Description: IR transmitter; 5mm; 880nm; diffused,violet; 25mW; 30°; 1.7VDC
Type of diode: IR transmitter
LED lens: diffused; violet
Wavelength: 880nm
Viewing angle: 30°
Mounting: THT
Operating voltage: 1.7V DC
LED current: 100mA
Radiant power: 25mW
Wavelength of peak sensitivity: 890nm
Shape: round
LED diameter: 5mm
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.80 грн |
| 22+ | 19.46 грн |
| 50+ | 17.19 грн |
| FDB2710 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 260W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 36.3mΩ
Mounting: SMD
Gate charge: 101nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 260W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 36.3mΩ
Mounting: SMD
Gate charge: 101nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 771 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 396.49 грн |
| 6+ | 319.53 грн |
| 10+ | 296.04 грн |
| 25+ | 249.08 грн |
| 100+ | 205.47 грн |
| MMBTA06LT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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Мінімальне замовлення: 10000 шт
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| FDMQ8205 |
|
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: driver
Technology: GreenBridge™ 2
Kind of package: reel; tape
Case: WDFN12
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: driver
Technology: GreenBridge™ 2
Kind of package: reel; tape
Case: WDFN12
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
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| FDMQ8403 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12
Mounting: SMD
Pulsed drain current: 12A
Power dissipation: 17W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET x4
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN12
On-state resistance: 191mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12
Mounting: SMD
Pulsed drain current: 12A
Power dissipation: 17W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET x4
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN12
On-state resistance: 191mΩ
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| NCP4307FBSNT1G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
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| NCV21874DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 4; 1.8÷5.5VDC; SO14; 0.045mV
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 4; 1.8÷5.5VDC; SO14; 0.045mV
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
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| SZ1SMA5920BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.2V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.2V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| SZ1SMA5919BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| NTMJS0D7N03CGTWG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 410A; Idm: 900A; 188W; LFPAK8
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 188W
Gate charge: 147nC
Polarisation: unipolar
Drain current: 410A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK8
On-state resistance: 0.65mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 410A; Idm: 900A; 188W; LFPAK8
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 188W
Gate charge: 147nC
Polarisation: unipolar
Drain current: 410A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK8
On-state resistance: 0.65mΩ
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Мінімальне замовлення: 3000 шт
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| NTB6410ANT4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; D2PAK
Mounting: SMD
Pulsed drain current: 305A
Power dissipation: 188W
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 13mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; D2PAK
Mounting: SMD
Pulsed drain current: 305A
Power dissipation: 188W
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 13mΩ
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Мінімальне замовлення: 800 шт
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| NTP6410ANG |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; TO220-3
Mounting: THT
Pulsed drain current: 305A
Power dissipation: 188W
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO220-3
On-state resistance: 13mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; TO220-3
Mounting: THT
Pulsed drain current: 305A
Power dissipation: 188W
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO220-3
On-state resistance: 13mΩ
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| FQP4N20L |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 45W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.4A
Pulsed drain current: 15.2A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 45W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.4A
Pulsed drain current: 15.2A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
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| FDP032N08B-F102 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 3.3mΩ
Mounting: THT
Pulsed drain current: 844A
Power dissipation: 263W
Gate charge: 111nC
Polarisation: unipolar
Drain current: 211A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 3.3mΩ
Mounting: THT
Pulsed drain current: 844A
Power dissipation: 263W
Gate charge: 111nC
Polarisation: unipolar
Drain current: 211A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
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| MC74ACT573DWG |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: tube
Manufacturer series: ACT
Technology: TTL
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: tube
Manufacturer series: ACT
Technology: TTL
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| MC74ACT573DTR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: ACT
Technology: TTL
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: ACT
Technology: TTL
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Мінімальне замовлення: 2500 шт
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| MC74ACT573DWR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: ACT
Technology: TTL
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: ACT
Technology: TTL
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| FCD3400N80Z |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 32W
Gate charge: 9.6nC
Polarisation: unipolar
Drain current: 1.2A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 3.4Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 32W
Gate charge: 9.6nC
Polarisation: unipolar
Drain current: 1.2A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 3.4Ω
товару немає в наявності
Мінімальне замовлення: 2500 шт
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