| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MC14094BDR2G | ONSEMI |
 Category: Shift registersDescription: IC: digital; 8bit,shift and store; CMOS; SMD; SO16; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: 8bit; shift and store Mounting: SMD Case: SO16 Operating temperature: -40...85°C Kind of output: 3-state Technology: CMOS Supply voltage: 3...18V DC |
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| MC14094BDTR2G | ONSEMI |
Category: Shift registers Description: IC: digital; 3-state,shift and store,register; Ch: 1; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; register; shift and store Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Number of channels: 1 Kind of output: 3-state Kind of package: reel; tape Technology: CMOS Supply voltage: 3...18V DC |
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NLV14094BDR2G | ONSEMI |
Category: Shift registers Description: IC: digital; 3-state,8-stage,shift and store,register; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8-stage; register; shift and store Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Number of channels: 1 Kind of output: 3-state Kind of package: reel; tape Technology: CMOS Supply voltage: 3...18V DC |
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| NLV14094BDTR2G | ONSEMI |
Category: Shift registers Description: IC: digital; 3-state,8-stage,shift and store,register; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8-stage; register; shift and store Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Number of channels: 1 Kind of output: 3-state Kind of package: reel; tape Technology: CMOS Supply voltage: 3...18V DC |
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4N29M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 4.17kV CTR@If: 100%@10mA Case: DIP6 Turn-on time: 5µs Turn-off time: 40µs Max. off-state voltage: 3V |
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| 4N29SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 4.17kV CTR@If: 100%@10mA Collector-emitter voltage: 30V Case: PDIP6 Turn-on time: 5µs Turn-off time: 40µs Max. off-state voltage: 3V Manufacturer series: 4N2X |
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NCP1341B1DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; resonant mode controller; SO8; push-pull,resonant LLC Mounting: SMD Kind of package: reel; tape Case: SO8 Operating voltage: 9...28V DC Output current: -500...800mA Type of integrated circuit: PMIC Number of channels: 1 Application: SMPS Operating temperature: -40...125°C Kind of integrated circuit: resonant mode controller Topology: push-pull; resonant LLC |
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| NCP1341B1D1R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; resonant mode controller; SO9; push-pull,resonant LLC Mounting: SMD Kind of package: reel; tape Case: SO9 Operating voltage: 9...28V DC Output current: -500...800mA Type of integrated circuit: PMIC Number of channels: 1 Application: SMPS Operating temperature: -40...125°C Kind of integrated circuit: resonant mode controller Topology: push-pull; resonant LLC |
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| NCP1341B4D1R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; resonant mode controller; SO9; push-pull,resonant LLC Mounting: SMD Kind of package: reel; tape Case: SO9 Operating voltage: 9...28V DC Output current: -500...800mA Type of integrated circuit: PMIC Number of channels: 1 Application: SMPS Operating temperature: -40...125°C Kind of integrated circuit: resonant mode controller Topology: push-pull; resonant LLC |
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NCP43080DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
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MC33151DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Operating temperature: -40...85°C Case: SO8 Supply voltage: 6.5...18V DC Output voltage: 0.8...11.2V Output current: -1.5...1.5A Mounting: SMD Impulse rise time: 30ns Pulse fall time: 30ns Number of channels: 2 Kind of output: inverting Kind of package: reel; tape Protection: undervoltage UVP Kind of integrated circuit: MOSFET gate driver |
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| RURG5060-F085 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 50A; tube; TO247-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 50A Semiconductor structure: single diode Kind of package: tube Case: TO247-2 Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
| RHRG5060-F085 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 50A; tube; TO247-2; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 50A Semiconductor structure: single diode Kind of package: tube Case: TO247-2 Application: automotive industry Reverse recovery time: 60ns |
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| NSPU5201MUTBG | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 22.7V; unidirectional; uDFN6; reel,tape Max. off-state voltage: 20V Semiconductor structure: unidirectional Breakdown voltage: 22.7V Kind of package: reel; tape Type of diode: TVS Mounting: SMD Case: uDFN6 |
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BZX79C10 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 10V; bulk; CASE017AG; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.2µA Manufacturer series: BZX79C |
на замовлення 363 шт: термін постачання 21-30 дні (днів) |
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| BZX79C10-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 10V; Ammo Pack; CASE017AG; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: Ammo Pack Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.2µA Manufacturer series: BZX79C |
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| RSL10-COIN-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board; Comp: RSL10 Type of accessories for development kits: expansion board Kit contents: prototype board Components: RSL10 Kind of connector: CR2032 development kits accessories features: Bluetooth board |
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CNY17F3M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
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74LCX373MTC | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Trigger: level-triggered Quiescent current: 10µA Kind of output: 3-state Kind of package: tube |
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74LCX373MTCX | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Trigger: level-triggered Quiescent current: 10µA Kind of output: 3-state Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||
| MC74LCX373DTG | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS Supply voltage: 1.5...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Family: LCX Kind of output: 3-state Integrated circuit features: 5V tolerant on inputs/outputs Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||
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MC74LCX373DTR2G | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Trigger: level-triggered |
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В кошику од. на суму грн. | ||||||||||||||
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FQP2N40-F080 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 40W Polarisation: unipolar Gate charge: 5.5nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 7.2A Drain-source voltage: 400V Drain current: 1.14A On-state resistance: 5.8Ω Type of transistor: N-MOSFET |
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FDN327N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 742 шт: термін постачання 21-30 дні (днів) |
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| FDMS8023S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56 Mounting: SMD Drain-source voltage: 30V Drain current: 49A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Power dissipation: 59W Polarisation: unipolar Kind of package: reel; tape Gate charge: 57nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 100A Case: Power56 |
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В кошику од. на суму грн. | |||||||||||||||
| NCN5150DG | ONSEMI |
Category: RS232 / RS422 / RS485 - integr. circ. Description: IC: interface Type of integrated circuit: interface |
на замовлення 229 шт: термін постачання 21-30 дні (днів) |
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NSR20F30NXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape Mounting: SMD Case: DSN0603-2 Kind of package: reel; tape Max. off-state voltage: 30V Max. load current: 4A Max. forward voltage: 0.48V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 28A Type of diode: Schottky rectifying |
на замовлення 994 шт: термін постачання 21-30 дні (днів) |
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NSR0620P2T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD923; SMD; 20V; 0.5A; reel,tape Mounting: SMD Case: SOD923 Kind of package: reel; tape Max. off-state voltage: 20V Max. forward voltage: 0.52V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 1A Type of diode: Schottky switching |
на замовлення 4916 шт: термін постачання 21-30 дні (днів) |
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| NSR0230M2T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD723; SMD; 30V; 0.2A; reel,tape Mounting: SMD Case: SOD723 Kind of package: reel; tape Max. off-state voltage: 30V Max. forward voltage: 0.5V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A Type of diode: Schottky switching |
на замовлення 8000 шт: термін постачання 21-30 дні (днів) |
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| FDB8447L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 60W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 60W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| FDMD8280 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 40A; Idm: 160A; 38W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 160A Power dissipation: 38W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
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MC74ACT574DWG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W; OUT: 3-state Operating temperature: -40...85°C Case: SO20-W Supply voltage: 4.5...5.5V DC Type of integrated circuit: digital Number of channels: 8 Kind of output: 3-state Trigger: positive-edge-triggered Manufacturer series: ACT Kind of integrated circuit: D flip-flop Mounting: SMD |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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| SMF05CT2G | ONSEMI |
Category: Diodes - Unclassified Description: SMF05CT2G |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| FDB12N50TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 165W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 30nC Technology: DMOS; UniFET™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 46A Drain-source voltage: 500V Drain current: 6.9A On-state resistance: 0.65Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MUR1540G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 200A Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. load current: 30A Reverse recovery time: 60ns |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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BZX79C8V2 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; bulk; CASE017AG; single diode; 0.7uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AG Semiconductor structure: single diode Manufacturer series: BZX79C Leakage current: 0.7µA |
на замовлення 1887 шт: термін постачання 21-30 дні (днів) |
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| MOC3072TVM | ONSEMI |
Category: Optotriacs Description: Optotriac Type of optocoupler: optotriac |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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MBRS360BT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.63V |
на замовлення 2501 шт: термін постачання 21-30 дні (днів) |
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| SZNUP2105LT3G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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KSP42TA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Current gain: 40 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KSP42BU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Current gain: 40 Mounting: THT Kind of package: bulk Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FSQ500L | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 700V; 130kHz; Ch: 1; 41Ω Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Mounting: SMD Number of channels: 1 Operating temperature: -40...85°C Case: SOT223 On-state resistance: 41Ω Topology: flyback Frequency: 130kHz Output voltage: 700V Application: SMPS Input voltage: 85...265V Duty cycle factor: 54...66% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MUN5114DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.187W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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| SMF15CT1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS array; 100W; 17÷19V; 5A; common anode; SC88; reel,tape Type of diode: TVS array Peak pulse power dissipation: 0.1kW Max. off-state voltage: 15V Breakdown voltage: 17...19V Max. forward impulse current: 5A Semiconductor structure: common anode Case: SC88 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Number of channels: 5 Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SZMM5Z4678T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD523F; single diode Manufacturer series: MM5Z4xxxT1G Semiconductor structure: single diode Zener voltage: 1.8V Application: automotive industry Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SOD523F Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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74LCX245MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 10µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SZMMSZ5225BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC74VHCT50ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; TSSOP14; VHCT Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 6 Mounting: SMD Case: TSSOP14 Manufacturer series: VHCT Supply voltage: 2...5.5V DC Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MC74HC1G00DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
на замовлення 21000 шт: термін постачання 21-30 дні (днів) |
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| 4N37SR2VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler Type of optocoupler: optocoupler |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| FDMS10C4D2N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 510A; 125W; Power56 Mounting: SMD Drain-source voltage: 100V Drain current: 48A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 65nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 510A Case: Power56 |
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| MJD32CT4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Mounting: SMD Kind of package: reel; tape Current gain: 10...50 Frequency: 3MHz |
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|
|
FDP075N15A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 92A Power dissipation: 333W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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| FDME1034CZT | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 3.8/-2.6A; 1.4W; uDFN6 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 3.8/-2.6A Power dissipation: 1.4W Case: uDFN6 Gate-source voltage: ±8V On-state resistance: 530/160mΩ Mounting: SMD Gate charge: 7.7/4.2nC Kind of package: reel; tape Kind of channel: enhancement |
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| FQD4P25TM-WS | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -1.96A; 45W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -250V Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain current: -1.96A |
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| FQD4P40TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.71A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain current: -1.71A |
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| SFP9530 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -7.5A; 66W; TO220-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Power dissipation: 66W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Drain current: -7.5A |
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|
|
FQT3P20TF | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -0.53A; 2.5W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain current: -530mA |
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 |
FQB8P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -32A Power dissipation: 65W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 15nC Drain current: -5.7A |
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|
FQP15P12 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -120V Pulsed drain current: -60A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 38nC Drain current: -10.6A |
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| MC14094BDR2G |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift and store; CMOS; SMD; SO16; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; shift and store
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Kind of output: 3-state
Technology: CMOS
Supply voltage: 3...18V DC
Category: Shift registers
Description: IC: digital; 8bit,shift and store; CMOS; SMD; SO16; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; shift and store
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Kind of output: 3-state
Technology: CMOS
Supply voltage: 3...18V DC
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| MC14094BDTR2G |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 3-state,shift and store,register; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; register; shift and store
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 1
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Supply voltage: 3...18V DC
Category: Shift registers
Description: IC: digital; 3-state,shift and store,register; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; register; shift and store
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 1
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Supply voltage: 3...18V DC
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| NLV14094BDR2G |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 3-state,8-stage,shift and store,register; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8-stage; register; shift and store
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Supply voltage: 3...18V DC
Category: Shift registers
Description: IC: digital; 3-state,8-stage,shift and store,register; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8-stage; register; shift and store
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Supply voltage: 3...18V DC
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| NLV14094BDTR2G |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 3-state,8-stage,shift and store,register; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8-stage; register; shift and store
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 1
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Supply voltage: 3...18V DC
Category: Shift registers
Description: IC: digital; 3-state,8-stage,shift and store,register; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8-stage; register; shift and store
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 1
Kind of output: 3-state
Kind of package: reel; tape
Technology: CMOS
Supply voltage: 3...18V DC
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| 4N29M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Case: DIP6
Turn-on time: 5µs
Turn-off time: 40µs
Max. off-state voltage: 3V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Case: DIP6
Turn-on time: 5µs
Turn-off time: 40µs
Max. off-state voltage: 3V
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| 4N29SR2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: PDIP6
Turn-on time: 5µs
Turn-off time: 40µs
Max. off-state voltage: 3V
Manufacturer series: 4N2X
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: PDIP6
Turn-on time: 5µs
Turn-off time: 40µs
Max. off-state voltage: 3V
Manufacturer series: 4N2X
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| NCP1341B1DR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; resonant mode controller; SO8; push-pull,resonant LLC
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Operating voltage: 9...28V DC
Output current: -500...800mA
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Operating temperature: -40...125°C
Kind of integrated circuit: resonant mode controller
Topology: push-pull; resonant LLC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; resonant mode controller; SO8; push-pull,resonant LLC
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Operating voltage: 9...28V DC
Output current: -500...800mA
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Operating temperature: -40...125°C
Kind of integrated circuit: resonant mode controller
Topology: push-pull; resonant LLC
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| NCP1341B1D1R2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; resonant mode controller; SO9; push-pull,resonant LLC
Mounting: SMD
Kind of package: reel; tape
Case: SO9
Operating voltage: 9...28V DC
Output current: -500...800mA
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Operating temperature: -40...125°C
Kind of integrated circuit: resonant mode controller
Topology: push-pull; resonant LLC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; resonant mode controller; SO9; push-pull,resonant LLC
Mounting: SMD
Kind of package: reel; tape
Case: SO9
Operating voltage: 9...28V DC
Output current: -500...800mA
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Operating temperature: -40...125°C
Kind of integrated circuit: resonant mode controller
Topology: push-pull; resonant LLC
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| NCP1341B4D1R2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; resonant mode controller; SO9; push-pull,resonant LLC
Mounting: SMD
Kind of package: reel; tape
Case: SO9
Operating voltage: 9...28V DC
Output current: -500...800mA
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Operating temperature: -40...125°C
Kind of integrated circuit: resonant mode controller
Topology: push-pull; resonant LLC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; resonant mode controller; SO9; push-pull,resonant LLC
Mounting: SMD
Kind of package: reel; tape
Case: SO9
Operating voltage: 9...28V DC
Output current: -500...800mA
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Operating temperature: -40...125°C
Kind of integrated circuit: resonant mode controller
Topology: push-pull; resonant LLC
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| NCP43080DDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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| MC33151DR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Operating temperature: -40...85°C
Case: SO8
Supply voltage: 6.5...18V DC
Output voltage: 0.8...11.2V
Output current: -1.5...1.5A
Mounting: SMD
Impulse rise time: 30ns
Pulse fall time: 30ns
Number of channels: 2
Kind of output: inverting
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Operating temperature: -40...85°C
Case: SO8
Supply voltage: 6.5...18V DC
Output voltage: 0.8...11.2V
Output current: -1.5...1.5A
Mounting: SMD
Impulse rise time: 30ns
Pulse fall time: 30ns
Number of channels: 2
Kind of output: inverting
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of integrated circuit: MOSFET gate driver
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| RURG5060-F085 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 50A; tube; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Case: TO247-2
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 50A; tube; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Case: TO247-2
Application: automotive industry
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| RHRG5060-F085 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 50A; tube; TO247-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Case: TO247-2
Application: automotive industry
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 50A; tube; TO247-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Case: TO247-2
Application: automotive industry
Reverse recovery time: 60ns
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| NSPU5201MUTBG |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 22.7V; unidirectional; uDFN6; reel,tape
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Breakdown voltage: 22.7V
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Case: uDFN6
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 22.7V; unidirectional; uDFN6; reel,tape
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Breakdown voltage: 22.7V
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
Case: uDFN6
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| BZX79C10 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; bulk; CASE017AG; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; bulk; CASE017AG; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX79C
на замовлення 363 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 11.55 грн |
| 51+ | 7.59 грн |
| 63+ | 6.17 грн |
| 104+ | 3.70 грн |
| BZX79C10-T50A |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; CASE017AG; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; CASE017AG; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX79C
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| RSL10-COIN-GEVB |
Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: RSL10
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: RSL10
Kind of connector: CR2032
development kits accessories features: Bluetooth board
Category: Development kits - others
Description: Expansion board; prototype board; Comp: RSL10
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: RSL10
Kind of connector: CR2032
development kits accessories features: Bluetooth board
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| CNY17F3M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
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| 74LCX373MTC |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: tube
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: tube
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| 74LCX373MTCX |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
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| MC74LCX373DTG |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 1.5...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of package: tube
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 1.5...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of package: tube
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| MC74LCX373DTR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
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| FQP2N40-F080 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 7.2A
Drain-source voltage: 400V
Drain current: 1.14A
On-state resistance: 5.8Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 5.5nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 7.2A
Drain-source voltage: 400V
Drain current: 1.14A
On-state resistance: 5.8Ω
Type of transistor: N-MOSFET
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| FDN327N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 742 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 28.88 грн |
| 18+ | 21.30 грн |
| 22+ | 17.47 грн |
| 50+ | 13.95 грн |
| 85+ | 10.65 грн |
| 100+ | 9.66 грн |
| FDMS8023S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56
Mounting: SMD
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 57nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: Power56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56
Mounting: SMD
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 57nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: Power56
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| NCN5150DG |
|
Виробник: ONSEMI
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface
Type of integrated circuit: interface
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface
Type of integrated circuit: interface
на замовлення 229 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 48+ | 115.54 грн |
| NSR20F30NXT5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Mounting: SMD
Case: DSN0603-2
Kind of package: reel; tape
Max. off-state voltage: 30V
Max. load current: 4A
Max. forward voltage: 0.48V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 28A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Mounting: SMD
Case: DSN0603-2
Kind of package: reel; tape
Max. off-state voltage: 30V
Max. load current: 4A
Max. forward voltage: 0.48V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 28A
Type of diode: Schottky rectifying
на замовлення 994 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.57 грн |
| 14+ | 27.82 грн |
| 50+ | 18.24 грн |
| 137+ | 17.24 грн |
| 500+ | 16.55 грн |
| NSR0620P2T5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 20V; 0.5A; reel,tape
Mounting: SMD
Case: SOD923
Kind of package: reel; tape
Max. off-state voltage: 20V
Max. forward voltage: 0.52V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 20V; 0.5A; reel,tape
Mounting: SMD
Case: SOD923
Kind of package: reel; tape
Max. off-state voltage: 20V
Max. forward voltage: 0.52V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Type of diode: Schottky switching
на замовлення 4916 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.38 грн |
| 43+ | 8.97 грн |
| 65+ | 5.98 грн |
| 100+ | 5.06 грн |
| NSR0230M2T5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD723; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Case: SOD723
Kind of package: reel; tape
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD723; SMD; 30V; 0.2A; reel,tape
Mounting: SMD
Case: SOD723
Kind of package: reel; tape
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Type of diode: Schottky switching
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 19.81 грн |
| 38+ | 10.19 грн |
| 56+ | 6.85 грн |
| 100+ | 5.97 грн |
| 308+ | 2.94 грн |
| 847+ | 2.77 грн |
| 8000+ | 2.70 грн |
| FDB8447L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 60W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 60W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 60W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 60W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMD8280 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 40A; Idm: 160A; 38W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 38W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 40A; Idm: 160A; 38W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 38W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MC74ACT574DWG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W; OUT: 3-state
Operating temperature: -40...85°C
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: 8
Kind of output: 3-state
Trigger: positive-edge-triggered
Manufacturer series: ACT
Kind of integrated circuit: D flip-flop
Mounting: SMD
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; ACT; SMD; SO20-W; OUT: 3-state
Operating temperature: -40...85°C
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: 8
Kind of output: 3-state
Trigger: positive-edge-triggered
Manufacturer series: ACT
Kind of integrated circuit: D flip-flop
Mounting: SMD
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 112.24 грн |
| SMF05CT2G |
|
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.57 грн |
| FDB12N50TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
Technology: DMOS; UniFET™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 46A
Drain-source voltage: 500V
Drain current: 6.9A
On-state resistance: 0.65Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
Technology: DMOS; UniFET™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 46A
Drain-source voltage: 500V
Drain current: 6.9A
On-state resistance: 0.65Ω
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| MUR1540G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. load current: 30A
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. load current: 30A
Reverse recovery time: 60ns
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 108.11 грн |
| 10+ | 83.53 грн |
| 15+ | 59.77 грн |
| BZX79C8V2 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; bulk; CASE017AG; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.7µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; bulk; CASE017AG; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.7µA
на замовлення 1887 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.08 грн |
| 66+ | 5.82 грн |
| 82+ | 4.71 грн |
| 137+ | 2.80 грн |
| 250+ | 2.21 грн |
| 500+ | 2.08 грн |
| MOC3072TVM |
|
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 55.29 грн |
| MBRS360BT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.63V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.63V
на замовлення 2501 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 35.49 грн |
| 18+ | 22.53 грн |
| 50+ | 18.39 грн |
| 67+ | 13.49 грн |
| 183+ | 12.72 грн |
| 500+ | 12.64 грн |
| 1000+ | 12.26 грн |
| SZNUP2105LT3G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 10.15 грн |
| KSP42TA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
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| KSP42BU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
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| FSQ500L |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 700V; 130kHz; Ch: 1; 41Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Case: SOT223
On-state resistance: 41Ω
Topology: flyback
Frequency: 130kHz
Output voltage: 700V
Application: SMPS
Input voltage: 85...265V
Duty cycle factor: 54...66%
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 700V; 130kHz; Ch: 1; 41Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Case: SOT223
On-state resistance: 41Ω
Topology: flyback
Frequency: 130kHz
Output voltage: 700V
Application: SMPS
Input voltage: 85...265V
Duty cycle factor: 54...66%
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| MUN5114DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
на замовлення 130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 65+ | 6.44 грн |
| 130+ | 3.07 грн |
| SMF15CT1G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS array; 100W; 17÷19V; 5A; common anode; SC88; reel,tape
Type of diode: TVS array
Peak pulse power dissipation: 0.1kW
Max. off-state voltage: 15V
Breakdown voltage: 17...19V
Max. forward impulse current: 5A
Semiconductor structure: common anode
Case: SC88
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 5
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS array; 100W; 17÷19V; 5A; common anode; SC88; reel,tape
Type of diode: TVS array
Peak pulse power dissipation: 0.1kW
Max. off-state voltage: 15V
Breakdown voltage: 17...19V
Max. forward impulse current: 5A
Semiconductor structure: common anode
Case: SC88
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 5
Version: ESD
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| SZMM5Z4678T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD523F; single diode
Manufacturer series: MM5Z4xxxT1G
Semiconductor structure: single diode
Zener voltage: 1.8V
Application: automotive industry
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD523F
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD523F; single diode
Manufacturer series: MM5Z4xxxT1G
Semiconductor structure: single diode
Zener voltage: 1.8V
Application: automotive industry
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD523F
Tolerance: ±5%
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| 74LCX245MTCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
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| SZMMSZ5225BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| MC74VHCT50ADTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; TSSOP14; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHCT
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; TSSOP14; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHCT
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
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| MC74HC1G00DBVT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 21000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.58 грн |
| 4N37SR2VM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 16.84 грн |
| FDMS10C4D2N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 510A; 125W; Power56
Mounting: SMD
Drain-source voltage: 100V
Drain current: 48A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 65nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 510A
Case: Power56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 510A; 125W; Power56
Mounting: SMD
Drain-source voltage: 100V
Drain current: 48A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 65nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 510A
Case: Power56
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| MJD32CT4G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Current gain: 10...50
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Current gain: 10...50
Frequency: 3MHz
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| FDP075N15A-F102 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 408.52 грн |
| 3+ | 337.19 грн |
| 8+ | 318.80 грн |
| FDME1034CZT |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 3.8/-2.6A; 1.4W; uDFN6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.8/-2.6A
Power dissipation: 1.4W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 530/160mΩ
Mounting: SMD
Gate charge: 7.7/4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 3.8/-2.6A; 1.4W; uDFN6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.8/-2.6A
Power dissipation: 1.4W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 530/160mΩ
Mounting: SMD
Gate charge: 7.7/4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FQD4P25TM-WS |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -1.96A; 45W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: -1.96A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -1.96A; 45W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -250V
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: -1.96A
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| FQD4P40TM |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.71A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: -1.71A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.71A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -400V
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: -1.71A
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| SFP9530 |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.5A; 66W; TO220-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Power dissipation: 66W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: -7.5A
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.5A; 66W; TO220-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Power dissipation: 66W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: -7.5A
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| FQT3P20TF |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.53A; 2.5W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: -530mA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -0.53A; 2.5W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: -530mA
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| FQB8P10TM |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -32A
Power dissipation: 65W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Drain current: -5.7A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -32A
Power dissipation: 65W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Drain current: -5.7A
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| FQP15P12 |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Pulsed drain current: -60A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 38nC
Drain current: -10.6A
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Pulsed drain current: -60A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 38nC
Drain current: -10.6A
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