Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDS4501h | ONSEMI |
![]() ![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8 Drain current: 9.3/-5.6A Gate charge: 21/27nC Drain-source voltage: 30/-20V Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20/±8V Type of transistor: N/P-MOSFET Power dissipation: 2.5W Case: SO8 Polarisation: unipolar Mounting: SMD On-state resistance: 80/29mΩ Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
NCP12400BBBBA0DR2G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.3...0.5A Frequency: 61...69kHz Number of channels: 1 Case: SO7 Mounting: SMD Operating temperature: -40...125°C Topology: flyback Operating voltage: 8.9...26.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
NCP12400BBHAA1DR2G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.3...0.5A Frequency: 94...110kHz Number of channels: 1 Case: SO7 Mounting: SMD Operating temperature: -40...125°C Topology: flyback Operating voltage: 8.9...26.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
NCP12400CBAAB0DR2G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.3...0.5A Frequency: 61...69kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
NCP12400CBHAA0DR2G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.3...0.5A Frequency: 61...69kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
NCP1240AD100R2G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 87...109kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 9.3...26.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2V7002KT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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FFSH2065B-F085 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.3A; TO247-2; tube Mounting: THT Max. off-state voltage: 650V Load current: 22.3A Semiconductor structure: single diode Application: automotive industry Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FFSH2065BDN-F085 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: common cathode; double Application: automotive industry Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
NLSX5011AMUTCG | ONSEMI |
![]() Description: IC: digital; Ch: 1; 0.9÷4.5VDC; SMD; uDFN6; -55÷125°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Number of channels: 1 Supply voltage: 0.9...4.5V DC Mounting: SMD Case: uDFN6 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 1 Number of outputs: 1 Integrated circuit features: auto-direction sensing Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
NZ9F22VT5G | ONSEMI |
![]() Description: Diode: Zener; 0.25W; 22V; SMD; reel,tape; SOD923; single diode; NZ9F Type of diode: Zener Power dissipation: 0.25W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD923 Semiconductor structure: single diode Manufacturer series: NZ9F |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
QRE1113GR | ONSEMI |
![]() Description: QRE1113GR |
на замовлення 25000 шт: термін постачання 21-30 дні (днів) |
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SS18 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 80V; 1A; reel,tape; 1.1W Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 80V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 40A Kind of package: reel; tape Power dissipation: 1.1W |
на замовлення 3660 шт: термін постачання 21-30 дні (днів) |
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BZX84C47LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C47LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
SZBZX84C47LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SZBZX84C22ET1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 22V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SZBZX84C22LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SS35 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 2.27W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
1SS351-TB-E | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape Type of diode: Schottky switching Case: SC59 Mounting: SMD Max. off-state voltage: 5V Load current: 30mA Semiconductor structure: double series Max. forward voltage: 0.23V Kind of package: reel; tape Capacitance: 0.9pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX84C24LT1G | ONSEMI |
![]() ![]() Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
на замовлення 3373 шт: термін постачання 21-30 дні (днів) |
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SZBZX84C24LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BYV32-200G | ONSEMI |
![]() Description: Diode: switching; THT; 200V; 16A; tube; Ifsm: 100A; TO220AB; Ir: 600uA Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 16A Semiconductor structure: common cathode; double Kind of package: tube Max. forward impulse current: 100A Case: TO220AB Max. forward voltage: 1.15V Leakage current: 0.6mA Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
GBPC2506 | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
GBPC2506W | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NTS4409NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323 Case: SC70; SOT323 Drain-source voltage: 25V Drain current: 0.75A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 0.28W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.2nC Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD |
на замовлення 2110 шт: термін постачання 21-30 дні (днів) |
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NLV14024BDR2G | ONSEMI |
![]() Description: IC: digital; asynchronous counter; TTL; SMD; SO14; 3÷18VDC; 600uA Mounting: SMD Operating temperature: -55...125°C Case: SO14 Supply voltage: 3...18V DC Type of integrated circuit: digital Quiescent current: 600µA Application: automotive industry Kind of package: reel; tape Technology: TTL Kind of integrated circuit: asynchronous counter |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
NSQA6V8AW5T2G | ONSEMI |
![]() Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A Type of diode: TVS array Breakdown voltage: 6.4...7.1V Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC88A Max. off-state voltage: 5V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SZNSQA6V8AW5T2G | ONSEMI |
![]() Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A Type of diode: TVS array Breakdown voltage: 6.4...7.1V Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC88A Max. off-state voltage: 5V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NC7S04M5X | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Mounting: SMD Case: SOT23-5 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Number of inputs: 1 |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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NC7S04P5X | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 2÷6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
PCRU3060W | ONSEMI |
Category: Transistors - Unclassified Description: PCRU3060W |
на замовлення 24079 шт: термін постачання 21-30 дні (днів) |
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FODM8071 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 20Mbps; 40kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV Transfer rate: 20Mbps Case: Mini-flat 5pin Turn-on time: 5.8ns Turn-off time: 5.3µs Slew rate: 40kV/μs |
на замовлення 1445 шт: термін постачання 21-30 дні (днів) |
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NCP51400MNTXG | ONSEMI |
![]() Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Operating voltage: 0.5...1.8/2.375...5.5V DC Case: DFN10 Mounting: SMD Operating temperature: -40...125°C Output voltage: -0.1...3.5V Output current: 3A Number of channels: 1 Application: for DDR memories Kind of integrated circuit: DDR memory termination regulator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
NCV51400MNTXG | ONSEMI |
![]() Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Operating voltage: 0.5...1.8/2.375...5.5V DC Case: DFN10 Mounting: SMD Operating temperature: max. 150°C Output voltage: -0.1...3.5V Output current: 3A Number of channels: 1 Application: automotive industry; for DDR memories Kind of integrated circuit: DDR memory termination regulator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
NCV51400MWTXG | ONSEMI |
![]() Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Operating voltage: 0.5...1.8/2.375...5.5V DC Case: DFN10 Mounting: SMD Operating temperature: max. 150°C Output voltage: -0.1...3.5V Output current: 3A Number of channels: 1 Application: automotive industry; for DDR memories Kind of integrated circuit: DDR memory termination regulator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S215FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 150V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 150V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74VHC4052DR2G | ONSEMI |
![]() Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: VHC Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC Family: VHC Kind of package: reel; tape Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
MC74VHC4052DTR2G | ONSEMI |
![]() Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC Family: VHC Kind of package: reel; tape Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC33179DR2G | ONSEMI |
![]() Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 5MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 2V/μs Operating temperature: -40...85°C Input offset voltage: 4mV Voltage supply range: ± 2...18V DC; 4...36V DC Kind of package: reel; tape |
на замовлення 201 шт: термін постачання 21-30 дні (днів) |
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SS33 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W Mounting: SMD Max. forward voltage: 0.5V Max. off-state voltage: 30V Case: SMC Kind of package: reel; tape Type of diode: Schottky rectifying Power dissipation: 2.27W Max. forward impulse current: 100A Semiconductor structure: single diode Load current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
ESD7461N2T5G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.3W; 16.5V; bidirectional; XDFN2; reel,tape; ESD Version: ESD Capacitance: 0.3pF Max. off-state voltage: 16V Semiconductor structure: bidirectional Breakdown voltage: 16.5V Leakage current: 0.1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.3W Mounting: SMD Case: XDFN2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SMMSD301T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMDL770T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD323; SMD; 70V; reel,tape; 200mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 70V Semiconductor structure: single diode Capacitance: 1pF Max. forward voltage: 1V Kind of package: reel; tape Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
HCPL4503SDM | ONSEMI |
![]() Description: Optocoupler Type of optocoupler: optocoupler |
на замовлення 26000 шт: термін постачання 21-30 дні (днів) |
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NTD20P06LT4G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15.5A Power dissipation: 65W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2484 шт: термін постачання 21-30 дні (днів) |
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BSS138K | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2.4nC |
на замовлення 8800 шт: термін постачання 21-30 дні (днів) |
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BSS138 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.7nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
RGF1K | ONSEMI |
![]() Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Case: SMA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
GF1K | ONSEMI |
![]() Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Case: SMA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BCP55 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223 Current gain: 40...250 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
RB521S30T5G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape |
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NSVRB521S30T5G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
MBR30H100MFST3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Mounting: SMD Max. off-state voltage: 100V Load current: 30A Semiconductor structure: single diode Max. forward voltage: 0.9V Max. forward impulse current: 0.3kA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
MBR30H100CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 100V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Max. forward impulse current: 250A Kind of package: tube Max. load current: 30A |
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В кошику од. на суму грн. | |||||||||||||||||||
NRVB30H100MFST1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DFN5 Max. off-state voltage: 100V Max. load current: 60A Max. forward voltage: 0.9V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 0.3kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
NRVB30H100MFST3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DFN5 Max. off-state voltage: 100V Max. load current: 60A Max. forward voltage: 0.9V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 0.3kA |
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В кошику од. на суму грн. | |||||||||||||||||||
2SK3557-6-TB-E | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 10mA Power dissipation: 0.2W Case: SC59 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
2SK3557-7-TB-E | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 16mA Power dissipation: 0.2W Case: SC59 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMBZ6V8ALT1G | ONSEMI |
![]() Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5% Type of diode: TVS array Breakdown voltage: 6.8V Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 4.5V Kind of package: reel; tape Peak pulse power dissipation: 24W Tolerance: ±5% Max. forward impulse current: 2.5A Leakage current: 0.5µA Version: ESD |
на замовлення 11331 шт: термін постачання 21-30 дні (днів) |
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FDS4501h |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8
Drain current: 9.3/-5.6A
Gate charge: 21/27nC
Drain-source voltage: 30/-20V
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20/±8V
Type of transistor: N/P-MOSFET
Power dissipation: 2.5W
Case: SO8
Polarisation: unipolar
Mounting: SMD
On-state resistance: 80/29mΩ
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8
Drain current: 9.3/-5.6A
Gate charge: 21/27nC
Drain-source voltage: 30/-20V
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20/±8V
Type of transistor: N/P-MOSFET
Power dissipation: 2.5W
Case: SO8
Polarisation: unipolar
Mounting: SMD
On-state resistance: 80/29mΩ
Kind of package: reel; tape
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NCP12400BBBBA0DR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...69kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...69kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 8.9...26.5V DC
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NCP12400BBHAA1DR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 94...110kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 94...110kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 8.9...26.5V DC
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NCP12400CBAAB0DR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...69kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...69kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
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NCP12400CBHAA0DR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...69kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...69kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
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NCP1240AD100R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 87...109kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.3...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 87...109kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.3...26.5V DC
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2V7002KT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.86 грн |
46+ | 8.45 грн |
67+ | 5.83 грн |
100+ | 5.09 грн |
291+ | 3.12 грн |
799+ | 2.95 грн |
2000+ | 2.83 грн |
FFSH2065B-F085 |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.3A; TO247-2; tube
Mounting: THT
Max. off-state voltage: 650V
Load current: 22.3A
Semiconductor structure: single diode
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.3A; TO247-2; tube
Mounting: THT
Max. off-state voltage: 650V
Load current: 22.3A
Semiconductor structure: single diode
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-2
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FFSH2065BDN-F085 |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
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NLSX5011AMUTCG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 0.9÷4.5VDC; SMD; uDFN6; -55÷125°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 1
Supply voltage: 0.9...4.5V DC
Mounting: SMD
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 1
Number of outputs: 1
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
Category: Level translators
Description: IC: digital; Ch: 1; 0.9÷4.5VDC; SMD; uDFN6; -55÷125°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 1
Supply voltage: 0.9...4.5V DC
Mounting: SMD
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 1
Number of outputs: 1
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
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NZ9F22VT5G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 22V; SMD; reel,tape; SOD923; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Manufacturer series: NZ9F
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 22V; SMD; reel,tape; SOD923; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Manufacturer series: NZ9F
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QRE1113GR |
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на замовлення 25000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 25.54 грн |
SS18 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 80V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 80V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
на замовлення 3660 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.89 грн |
18+ | 22.40 грн |
50+ | 16.90 грн |
66+ | 13.88 грн |
181+ | 13.10 грн |
500+ | 12.63 грн |
BZX84C47LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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BZX84C47LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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SZBZX84C47LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C22ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C22LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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SS35 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
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1SS351-TB-E |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SC59
Mounting: SMD
Max. off-state voltage: 5V
Load current: 30mA
Semiconductor structure: double series
Max. forward voltage: 0.23V
Kind of package: reel; tape
Capacitance: 0.9pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SC59
Mounting: SMD
Max. off-state voltage: 5V
Load current: 30mA
Semiconductor structure: double series
Max. forward voltage: 0.23V
Kind of package: reel; tape
Capacitance: 0.9pF
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BZX84C24LT1G | ![]() |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
на замовлення 3373 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
55+ | 7.63 грн |
95+ | 4.11 грн |
133+ | 2.93 грн |
146+ | 2.67 грн |
155+ | 2.51 грн |
673+ | 1.36 грн |
1500+ | 1.29 грн |
1850+ | 1.28 грн |
3000+ | 1.23 грн |
SZBZX84C24LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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BYV32-200G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 16A; tube; Ifsm: 100A; TO220AB; Ir: 600uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Max. forward voltage: 1.15V
Leakage current: 0.6mA
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 16A; tube; Ifsm: 100A; TO220AB; Ir: 600uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Max. forward voltage: 1.15V
Leakage current: 0.6mA
Reverse recovery time: 35ns
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GBPC2506 |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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GBPC2506W |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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NTS4409NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Case: SC70; SOT323
Drain-source voltage: 25V
Drain current: 0.75A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.2nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Case: SC70; SOT323
Drain-source voltage: 25V
Drain current: 0.75A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.2nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
на замовлення 2110 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.39 грн |
18+ | 22.09 грн |
50+ | 14.96 грн |
100+ | 12.63 грн |
102+ | 8.91 грн |
279+ | 8.45 грн |
1000+ | 8.14 грн |
NLV14024BDR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous counter; TTL; SMD; SO14; 3÷18VDC; 600uA
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Quiescent current: 600µA
Application: automotive industry
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: asynchronous counter
Category: Counters/dividers
Description: IC: digital; asynchronous counter; TTL; SMD; SO14; 3÷18VDC; 600uA
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Quiescent current: 600µA
Application: automotive industry
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: asynchronous counter
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NSQA6V8AW5T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
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SZNSQA6V8AW5T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
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NC7S04M5X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Number of inputs: 1
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.70 грн |
46+ | 8.45 грн |
63+ | 6.20 грн |
100+ | 5.40 грн |
203+ | 4.51 грн |
500+ | 4.07 грн |
NC7S04P5X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
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PCRU3060W |
на замовлення 24079 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 192.83 грн |
FODM8071 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 20Mbps; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Transfer rate: 20Mbps
Case: Mini-flat 5pin
Turn-on time: 5.8ns
Turn-off time: 5.3µs
Slew rate: 40kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 20Mbps; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Transfer rate: 20Mbps
Case: Mini-flat 5pin
Turn-on time: 5.8ns
Turn-off time: 5.3µs
Slew rate: 40kV/μs
на замовлення 1445 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 272.97 грн |
5+ | 179.83 грн |
8+ | 130.22 грн |
20+ | 123.25 грн |
200+ | 121.70 грн |
500+ | 117.82 грн |
NCP51400MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
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NCV51400MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
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NCV51400MWTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
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S215FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
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MC74VHC4052DR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
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MC74VHC4052DTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
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MC33179DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Kind of package: reel; tape
на замовлення 201 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 101.01 грн |
10+ | 47.83 грн |
23+ | 40.07 грн |
50+ | 38.76 грн |
63+ | 37.90 грн |
100+ | 36.43 грн |
SS33 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W
Mounting: SMD
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Case: SMC
Kind of package: reel; tape
Type of diode: Schottky rectifying
Power dissipation: 2.27W
Max. forward impulse current: 100A
Semiconductor structure: single diode
Load current: 3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W
Mounting: SMD
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Case: SMC
Kind of package: reel; tape
Type of diode: Schottky rectifying
Power dissipation: 2.27W
Max. forward impulse current: 100A
Semiconductor structure: single diode
Load current: 3A
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ESD7461N2T5G |
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 16.5V; bidirectional; XDFN2; reel,tape; ESD
Version: ESD
Capacitance: 0.3pF
Max. off-state voltage: 16V
Semiconductor structure: bidirectional
Breakdown voltage: 16.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Mounting: SMD
Case: XDFN2
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 16.5V; bidirectional; XDFN2; reel,tape; ESD
Version: ESD
Capacitance: 0.3pF
Max. off-state voltage: 16V
Semiconductor structure: bidirectional
Breakdown voltage: 16.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Mounting: SMD
Case: XDFN2
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SMMSD301T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
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MMDL770T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Semiconductor structure: single diode
Capacitance: 1pF
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Semiconductor structure: single diode
Capacitance: 1pF
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
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HCPL4503SDM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
на замовлення 26000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 41.15 грн |
NTD20P06LT4G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2484 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 96.00 грн |
10+ | 61.93 грн |
30+ | 31.47 грн |
80+ | 29.77 грн |
250+ | 29.69 грн |
BSS138K |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
на замовлення 8800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.35 грн |
72+ | 5.43 грн |
120+ | 3.24 грн |
250+ | 2.95 грн |
407+ | 2.24 грн |
1117+ | 2.12 грн |
BSS138 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
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RGF1K |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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GF1K |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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BCP55 |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
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RB521S30T5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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NSVRB521S30T5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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MBR30H100MFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
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MBR30H100CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. forward impulse current: 250A
Kind of package: tube
Max. load current: 30A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. forward impulse current: 250A
Kind of package: tube
Max. load current: 30A
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NRVB30H100MFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
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NRVB30H100MFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
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2SK3557-6-TB-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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2SK3557-7-TB-E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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MMBZ6V8ALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Peak pulse power dissipation: 24W
Tolerance: ±5%
Max. forward impulse current: 2.5A
Leakage current: 0.5µA
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Peak pulse power dissipation: 24W
Tolerance: ±5%
Max. forward impulse current: 2.5A
Leakage current: 0.5µA
Version: ESD
на замовлення 11331 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.51 грн |
72+ | 5.43 грн |
133+ | 2.91 грн |
500+ | 2.00 грн |
531+ | 1.71 грн |
1460+ | 1.61 грн |
3000+ | 1.55 грн |