| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SA2210-1E | onsemi |
 Description: TRANS PNP 50V 20A TO-220F-3SGPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V Frequency - Transition: 140MHz Supplier Device Package: TO-220F-3SG Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| 2SA2210-EPN-1EX | onsemi |
Description: TRANS PNP 50V 20A TO-220F-3SG Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V Frequency - Transition: 140MHz Supplier Device Package: TO-220F-3SG Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SB1203S-H-TL-E | onsemi |
Description: TRANS PNP 50V 5A TPFA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V Frequency - Transition: 130MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| 2SB1203T-H-TL-E | onsemi |
Description: TRANS PNP 50V 5A TP-FA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 130MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SB817C-1E | onsemi |
Description: TRANS PNP 140V 12A TO-3P-3L Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 10MHz Supplier Device Package: TO-3P-3L Part Status: Obsolete Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 120 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| 2SC3332R | onsemi |
Description: TRANS NPN 160V 0.7A 3NP Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Supplier Device Package: 3-NP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SC3332R-AA | onsemi |
Description: TRANS NPN 160V 0.7A 3NP Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Supplier Device Package: 3-NP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SC3646S-P-TD-E | onsemi |
Description: TRANS NPN 100V 1A Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SC3646T-P-TD-E | onsemi |
Description: TRANS NPN 100V 1A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| 2SC4486S-AN | onsemi |
Description: TRANS NPN 50V 2A 3NMP Packaging: Tape & Reel (TR) Package / Case: SC-71 Mounting Type: Through Hole Supplier Device Package: 3-NMP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SC4486T-AN | onsemi |
Description: TRANS NPN 50V 2A 3NMP Packaging: Tape & Reel (TR) Package / Case: SC-71 Mounting Type: Through Hole Supplier Device Package: 3-NMP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| 2SC5231C8-TL-E | onsemi |
Description: TRANS NPN 10V 0.07A SMCP Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Supplier Device Package: SMCP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 2SC5414AE | onsemi |
Description: TRANS NPN 12V 0.1A 3NP Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Supplier Device Package: 3-NP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 2SC5414AE-AA | onsemi |
Description: TRANS NPN 12V 0.1A 3NP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: 3-NP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 2SC5414AF | onsemi |
Description: TRANS NPN 12V 0.1A 3NP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bag Part Status: Obsolete Supplier Device Package: 3-NP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 2SC5414AF-AA | onsemi |
Description: TRANS NPN 12V 0.1A 3NP Part Status: Obsolete Supplier Device Package: 3-NP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SC5415AF-TD-E | onsemi |
Description: RF TRANS NPN 12V 6.7GHZ PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 9dB Power - Max: 800mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V Frequency - Transition: 6.7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: PCP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SC5488-TL-E | onsemi |
Description: TRANS NPN 10V 0.07A 3SSFP Packaging: Tape & Reel (TR) Package / Case: SOT-623F Mounting Type: Surface Mount Supplier Device Package: 3-SSFP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| 2SC5706-P-E | onsemi |
Description: TRANS NPN 100V 5A TP Packaging: Bag Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 400MHz Supplier Device Package: TP Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 2SC5706-P-TL-E | onsemi |
Description: TRANS NPN 100V 5A TP-FA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 400MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SC5964-S-TD-E | onsemi |
Description: TRANS NPN 50V 3A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 380MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.3 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SC5964-S-TD-H | onsemi |
Description: TRANS NPN 50V 3A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 380MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.3 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SC5964-TD-H | onsemi |
Description: TRANS NPN 50V 3A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 380MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3.5 W |
на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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| 2SC6017-TL-EX | onsemi |
Description: TRANS NPN 50V 10A TP-FA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 200MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 950 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SC6082-1E | onsemi |
Description: TRANS NPN 50V 15A TO-220F-3SG Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V Frequency - Transition: 195MHz Supplier Device Package: TO-220F-3SG Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
на замовлення 4813 шт: термін постачання 21-31 дні (днів) |
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2SC6082-EPN-1E | onsemi |
Description: TRANS NPN 50V 15A TO-220F-3SG Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V Frequency - Transition: 195MHz Supplier Device Package: TO-220F-3SG Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SD1060R-1E | onsemi |
Description: TRANS NPN 50V 5A TO220-3 Power - Max: 1.75 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: TO-220-3 Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Current - Collector Cutoff (Max): 100µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SD1060R-1EX | onsemi |
Description: TRANS NPN 50V 5A TO220-3 Power - Max: 1.75 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: TO-220-3 Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Current - Collector Cutoff (Max): 100µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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2SD1060S-1E | onsemi |
Description: TRANS NPN 50V 5A TO-220-3 Power - Max: 1.75 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 5 A Part Status: Active Supplier Device Package: TO-220-3 Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V Current - Collector Cutoff (Max): 100µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 4892 шт: термін постачання 21-31 дні (днів) |
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2SJ652-1E | onsemi |
Description: MOSFET P-CH 60V 28A TO220F-3SG Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: TO-220F-3SG Power Dissipation (Max): 2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SK3703-1E | onsemi |
Description: MOSFET N-CH 60V 30A TO220F-3SG Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: TO-220F-3SG Power Dissipation (Max): 2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SK3707-1E | onsemi |
Description: MOSFET N-CH 100V 20A TO220F-3SG Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: TO-220F-3SG Power Dissipation (Max): 2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SK3738-TL-E | onsemi |
Description: JFET N-CH 40V 1MA SMCP Current - Drain (Idss) @ Vds (Vgs=0): 50 µA @ 10 V Voltage - Cutoff (VGS off) @ Id: 2.3 V @ 1 µA Power - Max: 100 mW Drain to Source Voltage (Vdss): 40 V Supplier Device Package: SMCP Current Drain (Id) - Max: 1 mA Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V FET Type: N-Channel Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SK3745LS-1E | onsemi |
Description: MOSFET N-CH 1500V 2A TO220F-3FS Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Drain to Source Voltage (Vdss): 1500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220F-3FS Power Dissipation (Max): 2W (Ta), 35W (Tc) Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SK3746-1E | onsemi |
Description: MOSFET N-CH 1500V 2A TO3P-3L Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Drain to Source Voltage (Vdss): 1500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3P-3L Power Dissipation (Max): 2.5W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SK3747-1E | onsemi |
Description: MOSFET N-CH 1500V 2A TO3PF-3 Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Drain to Source Voltage (Vdss): 1500 V Vgs (Max): ±35V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PF-3 Power Dissipation (Max): 3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-94 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SK3748-1E | onsemi |
Description: MOSFET N-CH 1500V 4A TO3PF-3 Drain to Source Voltage (Vdss): 1500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PF-3 Power Dissipation (Max): 3W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Package / Case: SC-94 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SK3820-DL-1E | onsemi |
Description: MOSFET N-CH 100V 26A TO263-2 Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: TO-263-2 Power Dissipation (Max): 1.65W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SK4066-1E | onsemi |
Description: MOSFET N-CH 60V 100A TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: TO-262-3 Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SK4066-DL-1E | onsemi |
Description: MOSFET N-CH 60V 100A TO263-2 Supplier Device Package: TO-263-2 Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SK4087LS-1E | onsemi |
Description: MOSFET N-CH 600V 9.2A TO220F-3FS Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220F-3FS Power Dissipation (Max): 2W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SK4088LS-1E | onsemi |
Description: MOSFET N-CH 650V 7.5A TO220F-3FS Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220F-3FS Power Dissipation (Max): 2W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SK4099LS-1E | onsemi |
Description: MOSFET N-CH 600V 6.9A TO220F-3FS Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220F-3FS Power Dissipation (Max): 2W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| 2SK4124-1E | onsemi |
Description: MOSFET N-CH 500V 20A TO3P-3L Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Supplier Device Package: TO-3P-3L Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 2SK4125-1E | onsemi |
Description: MOSFET N-CH 600V 17A TO3P-3L Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Supplier Device Package: TO-3P-3L Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SK4177-DL-1E | onsemi |
Description: MOSFET N-CH 1500V 2A TO263-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V Power Dissipation (Max): 80W (Tc) Supplier Device Package: TO-263-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| 2SK536-MTK-TB-E | onsemi |
Description: MOSFET N-CH 50V 0.1A 3CP Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) Current - Continuous Drain (Id) @ 25°C: 100mA (Tj) Supplier Device Package: 3-CP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±12V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SK596S-A | onsemi |
Description: JFET N-CH 1MA 3SPA Packaging: Bag Package / Case: SC-72 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V Current Drain (Id) - Max: 1 mA Supplier Device Package: 3-SPA Part Status: Obsolete Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1 Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SK596S-C | onsemi |
Description: JFET N-CH 1MA 3SPA Packaging: Bag Package / Case: SC-72 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V Current Drain (Id) - Max: 1 mA Supplier Device Package: 3-SPA Part Status: Obsolete Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1 Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 5 V Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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3LN01S-K-TL-E | onsemi | Description: MOSFET N-CH 30V 0.15A SMCP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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3SK263-5-TG-E | onsemi |
Description: FET RF 15V 200MHZ CP4 Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Current Rating (Amps): 30mA Mounting Type: Surface Mount Frequency: 200MHz Configuration: N-Channel Dual Gate Gain: 21dB Technology: MOSFET Noise Figure: 2.2dB Supplier Device Package: 4-CP Part Status: Obsolete Voltage - Rated: 15 V Voltage - Test: 6 V Current - Test: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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5LN01SP | onsemi |
Description: MOSFET N-CH 50V 100MA 3SPA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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5LP01SP | onsemi |
Description: MOSFET P-CH 50V 70MA 3SPA Packaging: Bag Package / Case: SC-72 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V Power Dissipation (Max): 250mW (Ta) Supplier Device Package: 3-SPA Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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5LP01SP-AC | onsemi |
Description: MOSFET P-CH 50V 70MA 3SPA Packaging: Tape & Reel (TR) Package / Case: SC-72 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V Power Dissipation (Max): 250mW (Ta) Supplier Device Package: 3-SPA Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
ASM811JEUSF-T | onsemi |
Description: IC SUPERVISOR 1 CHANNEL SOT143-4 Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 4V Supplier Device Package: SOT-143 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ASM811LEUSF-T | onsemi |
Description: IC SUPERVISOR 1 CHANNEL SOT143-4 Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 4.63V Supplier Device Package: SOT-143 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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ATP304-TL-H | onsemi |
Description: MOSFET P-CH 60V 100A ATPAK Packaging: Tape & Reel (TR) Package / Case: ATPAK (2 leads+tab) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V Power Dissipation (Max): 90W (Tc) Supplier Device Package: ATPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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ATP401-TL-H | onsemi |
Description: MOSFET N-CH 60V 100A ATPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| ATP404-H-TL-H | onsemi |
Description: MOSFET N-CH 60V 95A ATPAK Packaging: Tape & Reel (TR) Package / Case: ATPAK (2 leads+tab) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Current - Continuous Drain (Id) @ 25°C: 95A (Tj) Supplier Device Package: ATPAK Part Status: Obsolete |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
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BAS16P2T5G | onsemi |
Description: DIODE STANDARD 100V 200MA SOD923 Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. |
| 2SA2210-1E |
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Виробник: onsemi
Description: TRANS PNP 50V 20A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Description: TRANS PNP 50V 20A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SA2210-EPN-1EX |
Виробник: onsemi
Description: TRANS PNP 50V 20A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Description: TRANS PNP 50V 20A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 350mA, 7A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: TO-220F-3SG
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SB1203S-H-TL-E |
Виробник: onsemi
Description: TRANS PNP 50V 5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS PNP 50V 5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SB1203T-H-TL-E |
Виробник: onsemi
Description: TRANS PNP 50V 5A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS PNP 50V 5A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SB817C-1E |
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Виробник: onsemi
Description: TRANS PNP 140V 12A TO-3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 120 W
Description: TRANS PNP 140V 12A TO-3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 120 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SC3332R |
Виробник: onsemi
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 2SC3332R-AA |
Виробник: onsemi
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 2SC3646S-P-TD-E |
Виробник: onsemi
Description: TRANS NPN 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS NPN 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2SC3646T-P-TD-E |
Виробник: onsemi
Description: TRANS NPN 100V 1A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS NPN 100V 1A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4486S-AN |
Виробник: onsemi
Description: TRANS NPN 50V 2A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Supplier Device Package: 3-NMP
Part Status: Obsolete
Description: TRANS NPN 50V 2A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Supplier Device Package: 3-NMP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4486T-AN |
Виробник: onsemi
Description: TRANS NPN 50V 2A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Supplier Device Package: 3-NMP
Part Status: Obsolete
Description: TRANS NPN 50V 2A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Supplier Device Package: 3-NMP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5231C8-TL-E |
Виробник: onsemi
Description: TRANS NPN 10V 0.07A SMCP
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Supplier Device Package: SMCP
Description: TRANS NPN 10V 0.07A SMCP
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Supplier Device Package: SMCP
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5414AE |
Виробник: onsemi
Description: TRANS NPN 12V 0.1A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
Description: TRANS NPN 12V 0.1A 3NP
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Supplier Device Package: 3-NP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5414AE-AA |
Виробник: onsemi
Description: TRANS NPN 12V 0.1A 3NP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 3-NP
Description: TRANS NPN 12V 0.1A 3NP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 3-NP
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5414AF |
Виробник: onsemi
Description: TRANS NPN 12V 0.1A 3NP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
Part Status: Obsolete
Supplier Device Package: 3-NP
Description: TRANS NPN 12V 0.1A 3NP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bag
Part Status: Obsolete
Supplier Device Package: 3-NP
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5414AF-AA |
Виробник: onsemi
Description: TRANS NPN 12V 0.1A 3NP
Part Status: Obsolete
Supplier Device Package: 3-NP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Description: TRANS NPN 12V 0.1A 3NP
Part Status: Obsolete
Supplier Device Package: 3-NP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5415AF-TD-E |
|
Виробник: onsemi
Description: RF TRANS NPN 12V 6.7GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: PCP
Part Status: Obsolete
Description: RF TRANS NPN 12V 6.7GHZ PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: PCP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5488-TL-E |
Виробник: onsemi
Description: TRANS NPN 10V 0.07A 3SSFP
Packaging: Tape & Reel (TR)
Package / Case: SOT-623F
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
Part Status: Obsolete
Description: TRANS NPN 10V 0.07A 3SSFP
Packaging: Tape & Reel (TR)
Package / Case: SOT-623F
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5706-P-E |
Виробник: onsemi
Description: TRANS NPN 100V 5A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
Description: TRANS NPN 100V 5A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5706-P-TL-E |
Виробник: onsemi
Description: TRANS NPN 100V 5A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
Description: TRANS NPN 100V 5A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5964-S-TD-E |
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5964-S-TD-H |
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5964-TD-H |
|
Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
Description: TRANS NPN 50V 3A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
на замовлення 11000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 16.99 грн |
| 2000+ | 14.87 грн |
| 3000+ | 14.10 грн |
| 5000+ | 12.43 грн |
| 7000+ | 11.95 грн |
| 10000+ | 11.49 грн |
| 2SC6017-TL-EX |
Виробник: onsemi
Description: TRANS NPN 50V 10A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 950 mW
Description: TRANS NPN 50V 10A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 950 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2SC6082-1E |
|
Виробник: onsemi
Description: TRANS NPN 50V 15A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Description: TRANS NPN 50V 15A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
на замовлення 4813 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 184.98 грн |
| 50+ | 87.68 грн |
| 100+ | 78.90 грн |
| 500+ | 59.60 грн |
| 1000+ | 54.95 грн |
| 2000+ | 51.05 грн |
| 2SC6082-EPN-1E |
|
Виробник: onsemi
Description: TRANS NPN 50V 15A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Description: TRANS NPN 50V 15A TO-220F-3SG
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220F-3SG
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SD1060R-1E |
|
Виробник: onsemi
Description: TRANS NPN 50V 5A TO220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 50V 5A TO220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| 2SD1060R-1EX |
|
Виробник: onsemi
Description: TRANS NPN 50V 5A TO220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 50V 5A TO220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| 2SD1060S-1E |
|
Виробник: onsemi
Description: TRANS NPN 50V 5A TO-220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 50V 5A TO-220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 4892 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.63 грн |
| 50+ | 71.54 грн |
| 100+ | 64.10 грн |
| 500+ | 47.91 грн |
| 1000+ | 43.97 грн |
| 2000+ | 40.65 грн |
| 2SJ652-1E |
Виробник: onsemi
Description: MOSFET P-CH 60V 28A TO220F-3SG
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3SG
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET P-CH 60V 28A TO220F-3SG
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3SG
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| 2SK3703-1E |
Виробник: onsemi
Description: MOSFET N-CH 60V 30A TO220F-3SG
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3SG
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 60V 30A TO220F-3SG
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3SG
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| 2SK3707-1E |
Виробник: onsemi
Description: MOSFET N-CH 100V 20A TO220F-3SG
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3SG
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 100V 20A TO220F-3SG
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3SG
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| 2SK3738-TL-E |
|
Виробник: onsemi
Description: JFET N-CH 40V 1MA SMCP
Current - Drain (Idss) @ Vds (Vgs=0): 50 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 2.3 V @ 1 µA
Power - Max: 100 mW
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: SMCP
Current Drain (Id) - Max: 1 mA
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Description: JFET N-CH 40V 1MA SMCP
Current - Drain (Idss) @ Vds (Vgs=0): 50 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 2.3 V @ 1 µA
Power - Max: 100 mW
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: SMCP
Current Drain (Id) - Max: 1 mA
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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| 2SK3745LS-1E |
|
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO220F-3FS
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 1500V 2A TO220F-3FS
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| 2SK3746-1E |
|
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO3P-3L
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P-3L
Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: MOSFET N-CH 1500V 2A TO3P-3L
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P-3L
Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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| 2SK3747-1E |
|
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO3PF-3
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±35V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF-3
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-94
Packaging: Tube
Description: MOSFET N-CH 1500V 2A TO3PF-3
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±35V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF-3
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-94
Packaging: Tube
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| 2SK3748-1E |
|
Виробник: onsemi
Description: MOSFET N-CH 1500V 4A TO3PF-3
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF-3
Power Dissipation (Max): 3W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Package / Case: SC-94
Packaging: Tube
Description: MOSFET N-CH 1500V 4A TO3PF-3
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF-3
Power Dissipation (Max): 3W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Package / Case: SC-94
Packaging: Tube
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| 2SK3820-DL-1E |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 26A TO263-2
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263-2
Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 26A TO263-2
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263-2
Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| 2SK4066-1E |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 100A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 60V 100A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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| 2SK4066-DL-1E |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 100A TO263-2
Supplier Device Package: TO-263-2
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Description: MOSFET N-CH 60V 100A TO263-2
Supplier Device Package: TO-263-2
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
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| 2SK4087LS-1E |
Виробник: onsemi
Description: MOSFET N-CH 600V 9.2A TO220F-3FS
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 9.2A TO220F-3FS
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| 2SK4088LS-1E |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 7.5A TO220F-3FS
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 650V 7.5A TO220F-3FS
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| 2SK4099LS-1E |
Виробник: onsemi
Description: MOSFET N-CH 600V 6.9A TO220F-3FS
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 6.9A TO220F-3FS
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| 2SK4124-1E |
Виробник: onsemi
Description: MOSFET N-CH 500V 20A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Description: MOSFET N-CH 500V 20A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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| 2SK4125-1E |
Виробник: onsemi
Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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| 2SK4177-DL-1E |
|
Виробник: onsemi
Description: MOSFET N-CH 1500V 2A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Description: MOSFET N-CH 1500V 2A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: TO-263-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
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| 2SK536-MTK-TB-E |
Виробник: onsemi
Description: MOSFET N-CH 50V 0.1A 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
Supplier Device Package: 3-CP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±12V
Description: MOSFET N-CH 50V 0.1A 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
Supplier Device Package: 3-CP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±12V
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| 2SK596S-A |
|
Виробник: onsemi
Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
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| 2SK596S-C |
Виробник: onsemi
Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 5 V
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
Description: JFET N-CH 1MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-SPA
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current Coupled to Voltage - Cutoff (VGS off) @ Id: 1
Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 5 V
Voltage Coupled to Current - Drain (Idss) @ Vds (Vgs=0): 5
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| 3LN01S-K-TL-E |
Виробник: onsemi
Description: MOSFET N-CH 30V 0.15A SMCP
Description: MOSFET N-CH 30V 0.15A SMCP
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| 3SK263-5-TG-E |
|
Виробник: onsemi
Description: FET RF 15V 200MHZ CP4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 21dB
Technology: MOSFET
Noise Figure: 2.2dB
Supplier Device Package: 4-CP
Part Status: Obsolete
Voltage - Rated: 15 V
Voltage - Test: 6 V
Current - Test: 10 mA
Description: FET RF 15V 200MHZ CP4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 21dB
Technology: MOSFET
Noise Figure: 2.2dB
Supplier Device Package: 4-CP
Part Status: Obsolete
Voltage - Rated: 15 V
Voltage - Test: 6 V
Current - Test: 10 mA
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| 5LN01SP |
|
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA 3SPA
Description: MOSFET N-CH 50V 100MA 3SPA
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| 5LP01SP |
Виробник: onsemi
Description: MOSFET P-CH 50V 70MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: 3-SPA
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
Description: MOSFET P-CH 50V 70MA 3SPA
Packaging: Bag
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: 3-SPA
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
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| 5LP01SP-AC |
Виробник: onsemi
Description: MOSFET P-CH 50V 70MA 3SPA
Packaging: Tape & Reel (TR)
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: 3-SPA
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
Description: MOSFET P-CH 50V 70MA 3SPA
Packaging: Tape & Reel (TR)
Package / Case: SC-72
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: 3-SPA
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
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| ASM811JEUSF-T |
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4V
Supplier Device Package: SOT-143
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4V
Supplier Device Package: SOT-143
DigiKey Programmable: Not Verified
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| ASM811LEUSF-T |
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 3000 шт
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| ATP304-TL-H |
|
Виробник: onsemi
Description: MOSFET P-CH 60V 100A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: ATPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
Description: MOSFET P-CH 60V 100A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: ATPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 162.20 грн |
| ATP401-TL-H |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 100A ATPAK
Description: MOSFET N-CH 60V 100A ATPAK
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| ATP404-H-TL-H |
Виробник: onsemi
Description: MOSFET N-CH 60V 95A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 95A (Tj)
Supplier Device Package: ATPAK
Part Status: Obsolete
Description: MOSFET N-CH 60V 95A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 95A (Tj)
Supplier Device Package: ATPAK
Part Status: Obsolete
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Мінімальне замовлення: 3000 шт
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| BAS16P2T5G |
|
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE STANDARD 100V 200MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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Мінімальне замовлення: 8000 шт
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