| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| LTA703S | onsemi | Description: INTEGRATED CIRCUIT |
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| MMBFJ177_G | onsemi |
Description: JFET P-CH 30V SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23-3 Part Status: Obsolete Power - Max: 225 mW Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V |
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MMBFJ201_G | onsemi |
Description: JFET N-CH 40V SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23-3 Part Status: Obsolete Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 20 V |
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MMBT3906_F080 | onsemi | Description: INTEGRATED CIRCUIT |
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| MMSD4148_G | onsemi |
Description: DIODE STANDARD 100V 200MA SOD123 Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
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NC7SZ04M5X_F40 | onsemi | Description: IC INVERTER 1CH 1-INP SOT23-5 |
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NC7SZ32M5X_F40 | onsemi | Description: IC GATE OR 1CH 2-INP SOT23-5 |
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NDS9407_G | onsemi |
Description: MOSFET P-CH 60V 3A 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 30 V |
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| SG6859DTY | onsemi |
Description: INTEGRATED CIRCUITPackaging: Bulk Package / Case: SOT-23-6 Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Frequency - Switching: 65kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 9.5V ~ 22V Supplier Device Package: SOT-26 Control Features: Current Limit, Frequency Control Output Phases: 1 Duty Cycle (Max): 75% Clock Sync: Yes Part Status: Obsolete Number of Outputs: 1 |
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FCU360N65S3R0 | onsemi |
Description: MOSFET N-CH 600V IPAKPackaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Supplier Device Package: IPAK Part Status: Not For New Designs |
на замовлення 1515 шт: термін постачання 21-31 дні (днів) |
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| KA431LZTA_F081 | onsemi |
Description: IC VREF SHUNT ADJ TO92-3 Part Status: Obsolete Packaging: Tape & Box (TB) |
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FDB075N15A_SN00284 | onsemi |
Description: MOSFET N-CH 150V 130A D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
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FDD9407_SN00283 | onsemi |
Description: MOSFET N-CH 40V 100A DPAK Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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FDN339AN_G | onsemi |
Description: MOSFET N-CH 20V 3A SUPERSOT3 Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 500mW (Ta) |
товару немає в наявності |
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FDS5672_F095 | onsemi |
Description: MOSFET N-CH 60V 12A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
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FDS6690A_NBBM015A | onsemi |
Description: MOSFET N-CH 30V 11A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FDS8984_F123 | onsemi |
Description: MOSFET 2N-CH 30V 8-SOIC Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FQD12N20LTM_SN00173 | onsemi |
Description: MOSFET N-CH 200V 9A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PCFG40N120ANF | onsemi |
Description: MOSFET N-CH Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 2N7000BU_T | onsemi |
Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
товару немає в наявності |
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| KA78R12CPWD | onsemi |
Description: IC REG LINEAR 12V 1A Packaging: Bulk Output Type: Fixed Current - Output: 1A Operating Temperature: -20°C ~ 80°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 35V Number of Regulators: 1 Voltage - Output (Min/Fixed): 12V Control Features: Enable Part Status: Obsolete Voltage Dropout (Max): 0.5V @ 1A Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MJD31CETF | onsemi |
Description: TRANS NPN Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TIP31ATU_F129 | onsemi |
Description: TRANS NPN 60V 3A TO-220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TIP32CPWD | onsemi |
Description: TRANS PNP 100V Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BDW93CPWD | onsemi |
Description: TRANS NPN 100V TO220 Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FAN7085MX_SN00036 | onsemi |
Description: IC GATE DRVR HIGH-SIDE 8SOIC Packaging: Tube Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FAN7631SJX_G | onsemi |
Description: IC CTLR PFM RESON CONV 16SOIC Packaging: Tube Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PCFG40N120ANW | onsemi |
Description: IGBT NPT 1200V Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NCH-RSL10-101WC51-ABG | onsemi |
Description: IC RF TXRX+MCU BLE 51WLCSPPackaging: Cut Tape (CT) Package / Case: 51-XFBGA, WLCSP Sensitivity: -94dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Power - Output: 6dBm Protocol: Bluetooth v5.0 Current - Receiving: 3mA ~ 6.2mA Data Rate (Max): 2Mbps Current - Transmitting: 12mA ~ 25mA Supplier Device Package: 51-WLCSP (2.33x2.36) Modulation: FSK, GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART DigiKey Programmable: Not Verified |
на замовлення 7575 шт: термін постачання 21-31 дні (днів) |
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FCP260N65S3 | onsemi |
Description: MOSFET N-CH 650V 12A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400 |
на замовлення 774 шт: термін постачання 21-31 дні (днів) |
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FCPF600N60ZL1 | onsemi |
Description: MOSFET N-CH 650V 7.4A TO220FPackaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FGH40T65SQD_F155 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31.8 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16.4ns/86.4ns Switching Energy: 138µJ (on), 52µJ (off) Test Condition: 400V, 10A, 6Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 238 W |
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В кошику од. на суму грн. | ||||||||||||||
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FGH75T65SQDT_F155 | onsemi |
Description: IGBT TRENCH FS 650V 150A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 76 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/120ns Switching Energy: 300µJ (on), 70µJ (off) Test Condition: 400V, 18.8A, 4.7Ohm, 15V Gate Charge: 128 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FL7760AM6X | onsemi |
Description: IC LED DRV CTRL PWM 1.5A SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Voltage - Output: 4.5V ~ 5.5V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Controller Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Current - Output / Channel: 1.5A Internal Switch(s): No Topology: Step-Down (Buck) Supplier Device Package: SOT-23-6 Dimming: Analog, PWM Voltage - Supply (Min): 8V Voltage - Supply (Max): 60V Part Status: Active |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FNA41560T2 | onsemi |
Description: MODULE SPM 600V 15A 26PWRDIPPackaging: Tube Package / Case: 26-PowerDIP Module (1.134", 28.80mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 15 A Voltage: 600 V |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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NTP082N65S3F | onsemi |
Description: MOSFET N-CH 650V 40A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V |
на замовлення 690 шт: термін постачання 21-31 дні (днів) |
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AR1335CSSC11SMKA0-CR1 | onsemi |
Description: IMAGE SENSOR 13MP 1/3 CIS SOPackaging: Tray Package / Case: 63-WFBGA, CSPBGA Supplier Device Package: 63-ODCSP (6.29x5.69) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESDM3051N2T5G | onsemi |
Description: TVS DIODE 5VWM 8.2VC 2X2DFN |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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ESDM3551MXT5G | onsemi |
Description: TVS DIODE 5.5VWM 8.2VC 2X3DFNPackaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 21pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 8.2V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
| KLI-8023-AAA-ER-AA | onsemi |
Description: IMAGE SENSOR CCD LINEAR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NCP1622BECSNT1G | onsemi |
Description: IC PFC CTRLR CRM 6TSOPPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 9.5V ~ 30V Mode: Critical Conduction (CRM) Supplier Device Package: 6-TSOP Part Status: Active Current - Startup: 70 µA |
на замовлення 134975 шт: термін постачання 21-31 дні (днів) |
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NCP1632DR2G | onsemi |
Description: IC PFC CTRLR CRM 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 10V ~ 20V Mode: Critical Conduction (CRM) Supplier Device Package: 16-SOIC Part Status: Active Current - Startup: 50 µA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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NCP781BMN033TAG | onsemi |
Description: IC REG LINEAR 3.3V 100MA 6-DFNPackaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 55 µA Voltage - Input (Max): 150V Number of Regulators: 1 Supplier Device Package: 6-DFN (3.3x3.3) Voltage - Output (Min/Fixed): 3.3V PSRR: 83dB ~ 56dB (1kHz ~ 100kHz) Voltage Dropout (Max): 9.5V @ 100mA Protection Features: Over Temperature, Short Circuit Current - Supply (Max): 400 µA |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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NCP781BMN050TAG | onsemi |
Description: IC REG LINEAR 5V 100MA 6-DFNPackaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 55 µA Voltage - Input (Max): 150V Number of Regulators: 1 Supplier Device Package: 6-DFN (3.3x3.3) Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 83dB ~ 56dB (1kHz ~ 100kHz) Voltage Dropout (Max): 9.5V @ 100mA Protection Features: Over Temperature, Short Circuit Current - Supply (Max): 400 µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NCP781BMNADJTAG | onsemi |
Description: IC REG LIN POS ADJ 100MA 6-DFNPackaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 55 µA Voltage - Input (Max): 150V Number of Regulators: 1 Supplier Device Package: 6-DFN (3.3x3.3) Voltage - Output (Max): 15V Voltage - Output (Min/Fixed): 1.23V PSRR: 83dB ~ 56dB (1kHz ~ 100kHz) Voltage Dropout (Max): 9.5V @ 100mA Protection Features: Over Temperature, Short Circuit Current - Supply (Max): 400 µA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NLVVHC1G132DFT1G | onsemi |
Description: IC GATE NAND 1CH 2-INP SC88AFeatures: Schmitt Trigger Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Input Logic Level - High: 1.9V ~ 4.5V Input Logic Level - Low: 0.1V ~ 0.52V Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF Grade: Automotive Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||
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NSVP249SDSF3T1G | onsemi |
Description: DIODE PIN 50V 100MW SC70/MCPH3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: SC-70 / MCP3 Grade: Automotive Current - Max: 50 mA Power Dissipation (Max): 100 mW Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NVMFD5C446NLT1G | onsemi |
Description: MOSFET 2N-CH 40V 25A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 90µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C462NLT1G | onsemi |
Description: MOSFET 2N-CH 40V 18A/84A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 50W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 84A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 40µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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NVMFD5C650NLT1G | onsemi |
Description: MOSFET 2N-CH 60V 21A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta), 125W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 98µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C672NLT1G | onsemi |
Description: MOSFET 2N-CH 60V 12A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 45W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C450NLAFT3G | onsemi |
Description: MOSFET N-CH 40V 27A/110A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Power Dissipation (Max): 3.7W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS5C450NLWFAFT3G | onsemi |
Description: MOSFET N-CH 40V 27A/110A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Power Dissipation (Max): 3.7W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS5C456NLAFT3G | onsemi |
Description: MOSFET N-CH 40V 22A/87A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 50µA Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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NVTFS6H850NTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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| PEL-TT3034 | onsemi |
Description: SANYO BIPOLAR POWER NPN C Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PEL-TT3043 | onsemi |
Description: SANYO BIPOLAR POWER PNP C Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TL331VSN4T3G | onsemi |
Description: IC COMPARATOR 1 GEN PUR 5TSOPPackaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Number of Elements: 1 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 5-TSOP Propagation Delay (Max): 850ns (Typ) Current - Quiescent (Max): 1.25mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q100 |
на замовлення 120000 шт: термін постачання 21-31 дні (днів) |
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| VEC2415-TL-W-Z | onsemi |
Description: MOSFET 2N-CH 60V 3A SOT28 Part Status: Obsolete Supplier Device Package: SOT-28FL/VEC8 Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SPS-READER-GEVK | onsemi |
Description: IOT IDK SPS READER EVALUAPackaging: Bulk Function: Smart Passive Type: Sensor Contents: Board(s) Utilized IC / Part: NCP163, NCP3170, NCP3337, NCP5663, NLAS323, PCA9655E Platform: IoT Development Kit (IDK) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
| LTA703S |
Виробник: onsemi
Description: INTEGRATED CIRCUIT
Description: INTEGRATED CIRCUIT
товару немає в наявності
В кошику
од. на суму грн.
| MMBFJ177_G |
Виробник: onsemi
Description: JFET P-CH 30V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
Description: JFET P-CH 30V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
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од. на суму грн.
| MMBFJ201_G |
Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 20 V
Description: JFET N-CH 40V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 20 V
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В кошику
од. на суму грн.
| MMBT3906_F080 |
Виробник: onsemi
Description: INTEGRATED CIRCUIT
Description: INTEGRATED CIRCUIT
товару немає в наявності
В кошику
од. на суму грн.
| MMSD4148_G |
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 100V 200MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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| NC7SZ04M5X_F40 |
Виробник: onsemi
Description: IC INVERTER 1CH 1-INP SOT23-5
Description: IC INVERTER 1CH 1-INP SOT23-5
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| NC7SZ32M5X_F40 |
Виробник: onsemi
Description: IC GATE OR 1CH 2-INP SOT23-5
Description: IC GATE OR 1CH 2-INP SOT23-5
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| NDS9407_G |
Виробник: onsemi
Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 30 V
Description: MOSFET P-CH 60V 3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 30 V
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| SG6859DTY |
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Виробник: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: SOT-23-6
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Frequency - Switching: 65kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 22V
Supplier Device Package: SOT-26
Control Features: Current Limit, Frequency Control
Output Phases: 1
Duty Cycle (Max): 75%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: SOT-23-6
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Frequency - Switching: 65kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 22V
Supplier Device Package: SOT-26
Control Features: Current Limit, Frequency Control
Output Phases: 1
Duty Cycle (Max): 75%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
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| FCU360N65S3R0 |
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Виробник: onsemi
Description: MOSFET N-CH 600V IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Supplier Device Package: IPAK
Part Status: Not For New Designs
Description: MOSFET N-CH 600V IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Supplier Device Package: IPAK
Part Status: Not For New Designs
на замовлення 1515 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.50 грн |
| 75+ | 87.64 грн |
| 150+ | 79.38 грн |
| 525+ | 63.45 грн |
| 1050+ | 58.67 грн |
| KA431LZTA_F081 |
Виробник: onsemi
Description: IC VREF SHUNT ADJ TO92-3
Part Status: Obsolete
Packaging: Tape & Box (TB)
Description: IC VREF SHUNT ADJ TO92-3
Part Status: Obsolete
Packaging: Tape & Box (TB)
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| FDB075N15A_SN00284 |
Виробник: onsemi
Description: MOSFET N-CH 150V 130A D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 333W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 150V 130A D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 333W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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| FDD9407_SN00283 |
Виробник: onsemi
Description: MOSFET N-CH 40V 100A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 100A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| FDN339AN_G |
Виробник: onsemi
Description: MOSFET N-CH 20V 3A SUPERSOT3
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Description: MOSFET N-CH 20V 3A SUPERSOT3
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
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| FDS5672_F095 |
Виробник: onsemi
Description: MOSFET N-CH 60V 12A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 12A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| FDS6690A_NBBM015A |
Виробник: onsemi
Description: MOSFET N-CH 30V 11A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 11A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| FDS8984_F123 |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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| FQD12N20LTM_SN00173 |
Виробник: onsemi
Description: MOSFET N-CH 200V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Description: MOSFET N-CH 200V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
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| 2N7000BU_T |
Виробник: onsemi
Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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| KA78R12CPWD |
Виробник: onsemi
Description: IC REG LINEAR 12V 1A
Packaging: Bulk
Output Type: Fixed
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Voltage - Output (Min/Fixed): 12V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Description: IC REG LINEAR 12V 1A
Packaging: Bulk
Output Type: Fixed
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Voltage - Output (Min/Fixed): 12V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
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| TIP31ATU_F129 |
Виробник: onsemi
Description: TRANS NPN 60V 3A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: TRANS NPN 60V 3A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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| FAN7085MX_SN00036 |
Виробник: onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| FAN7631SJX_G |
Виробник: onsemi
Description: IC CTLR PFM RESON CONV 16SOIC
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC CTLR PFM RESON CONV 16SOIC
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| NCH-RSL10-101WC51-ABG |
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Виробник: onsemi
Description: IC RF TXRX+MCU BLE 51WLCSP
Packaging: Cut Tape (CT)
Package / Case: 51-XFBGA, WLCSP
Sensitivity: -94dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 6dBm
Protocol: Bluetooth v5.0
Current - Receiving: 3mA ~ 6.2mA
Data Rate (Max): 2Mbps
Current - Transmitting: 12mA ~ 25mA
Supplier Device Package: 51-WLCSP (2.33x2.36)
Modulation: FSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 51WLCSP
Packaging: Cut Tape (CT)
Package / Case: 51-XFBGA, WLCSP
Sensitivity: -94dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 6dBm
Protocol: Bluetooth v5.0
Current - Receiving: 3mA ~ 6.2mA
Data Rate (Max): 2Mbps
Current - Transmitting: 12mA ~ 25mA
Supplier Device Package: 51-WLCSP (2.33x2.36)
Modulation: FSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 7575 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 540.89 грн |
| 10+ | 451.83 грн |
| 25+ | 427.76 грн |
| 100+ | 370.49 грн |
| 250+ | 351.95 грн |
| 500+ | 338.87 грн |
| 1000+ | 321.19 грн |
| FCP260N65S3 |
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Виробник: onsemi
Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 774 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 261.92 грн |
| 50+ | 128.03 грн |
| 100+ | 116.04 грн |
| 500+ | 89.19 грн |
| FCPF600N60ZL1 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 650V 7.4A TO220F
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
Description: MOSFET N-CH 650V 7.4A TO220F
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
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| FGH40T65SQD_F155 |
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Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.4ns/86.4ns
Switching Energy: 138µJ (on), 52µJ (off)
Test Condition: 400V, 10A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.4ns/86.4ns
Switching Energy: 138µJ (on), 52µJ (off)
Test Condition: 400V, 10A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
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| FGH75T65SQDT_F155 |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/120ns
Switching Energy: 300µJ (on), 70µJ (off)
Test Condition: 400V, 18.8A, 4.7Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/120ns
Switching Energy: 300µJ (on), 70µJ (off)
Test Condition: 400V, 18.8A, 4.7Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
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| FL7760AM6X |
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Виробник: onsemi
Description: IC LED DRV CTRL PWM 1.5A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1.5A
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SOT-23-6
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 60V
Part Status: Active
Description: IC LED DRV CTRL PWM 1.5A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1.5A
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: SOT-23-6
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 60V
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 26.48 грн |
| 6000+ | 24.88 грн |
| FNA41560T2 |
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Виробник: onsemi
Description: MODULE SPM 600V 15A 26PWRDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
Description: MODULE SPM 600V 15A 26PWRDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1169.34 грн |
| 10+ | 992.16 грн |
| NTP082N65S3F |
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Виробник: onsemi
Description: MOSFET N-CH 650V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
Description: MOSFET N-CH 650V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 605.20 грн |
| 50+ | 320.54 грн |
| 100+ | 295.27 грн |
| 500+ | 244.50 грн |
| AR1335CSSC11SMKA0-CR1 |
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Виробник: onsemi
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Supplier Device Package: 63-ODCSP (6.29x5.69)
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Supplier Device Package: 63-ODCSP (6.29x5.69)
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| ESDM3051N2T5G |
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Виробник: onsemi
Description: TVS DIODE 5VWM 8.2VC 2X2DFN
Description: TVS DIODE 5VWM 8.2VC 2X2DFN
товару немає в наявності
Мінімальне замовлення: 8000 шт
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| ESDM3551MXT5G |
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Виробник: onsemi
Description: TVS DIODE 5.5VWM 8.2VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 8.2V
Description: TVS DIODE 5.5VWM 8.2VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 8.2V
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| KLI-8023-AAA-ER-AA |
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Виробник: onsemi
Description: IMAGE SENSOR CCD LINEAR
Description: IMAGE SENSOR CCD LINEAR
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| NCP1622BECSNT1G |
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Виробник: onsemi
Description: IC PFC CTRLR CRM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 30V
Mode: Critical Conduction (CRM)
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Startup: 70 µA
Description: IC PFC CTRLR CRM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 30V
Mode: Critical Conduction (CRM)
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Startup: 70 µA
на замовлення 134975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 24.98 грн |
| 6000+ | 23.15 грн |
| 15000+ | 22.43 грн |
| 30000+ | 21.01 грн |
| NCP1632DR2G |
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Виробник: onsemi
Description: IC PFC CTRLR CRM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Mode: Critical Conduction (CRM)
Supplier Device Package: 16-SOIC
Part Status: Active
Current - Startup: 50 µA
Description: IC PFC CTRLR CRM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Mode: Critical Conduction (CRM)
Supplier Device Package: 16-SOIC
Part Status: Active
Current - Startup: 50 µA
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| NCP781BMN033TAG |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 100MA 6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 150V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3.3x3.3)
Voltage - Output (Min/Fixed): 3.3V
PSRR: 83dB ~ 56dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 9.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 400 µA
Description: IC REG LINEAR 3.3V 100MA 6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 150V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3.3x3.3)
Voltage - Output (Min/Fixed): 3.3V
PSRR: 83dB ~ 56dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 9.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 400 µA
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 36.34 грн |
| 6000+ | 34.19 грн |
| 9000+ | 33.80 грн |
| 15000+ | 31.30 грн |
| NCP781BMN050TAG |
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Виробник: onsemi
Description: IC REG LINEAR 5V 100MA 6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 150V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3.3x3.3)
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 83dB ~ 56dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 9.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 400 µA
Description: IC REG LINEAR 5V 100MA 6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 150V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3.3x3.3)
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 83dB ~ 56dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 9.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 400 µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NCP781BMNADJTAG |
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Виробник: onsemi
Description: IC REG LIN POS ADJ 100MA 6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 150V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3.3x3.3)
Voltage - Output (Max): 15V
Voltage - Output (Min/Fixed): 1.23V
PSRR: 83dB ~ 56dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 9.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 400 µA
Description: IC REG LIN POS ADJ 100MA 6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 150V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3.3x3.3)
Voltage - Output (Max): 15V
Voltage - Output (Min/Fixed): 1.23V
PSRR: 83dB ~ 56dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 9.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 400 µA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 36.88 грн |
| 6000+ | 34.71 грн |
| NLVVHC1G132DFT1G |
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Виробник: onsemi
Description: IC GATE NAND 1CH 2-INP SC88A
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.9V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 0.52V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Description: IC GATE NAND 1CH 2-INP SC88A
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.9V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 0.52V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 30000 шт
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| NSVP249SDSF3T1G |
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Виробник: onsemi
Description: DIODE PIN 50V 100MW SC70/MCPH3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SC-70 / MCP3
Grade: Automotive
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
Qualification: AEC-Q101
Description: DIODE PIN 50V 100MW SC70/MCPH3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SC-70 / MCP3
Grade: Automotive
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NVMFD5C446NLT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 130.13 грн |
| NVMFD5C462NLT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 18A/84A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 84A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 18A/84A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 84A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
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| NVMFD5C650NLT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 142.36 грн |
| NVMFD5C672NLT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 12A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 45W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 12A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 45W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 65.18 грн |
| NVMFS5C450NLAFT3G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 27A/110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 3.7W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 27A/110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 3.7W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
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| NVMFS5C450NLWFAFT3G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 27A/110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 3.7W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 27A/110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 3.7W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
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| NVMFS5C456NLAFT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 22A/87A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 22A/87A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| NVTFS6H850NTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 29.46 грн |
| 3000+ | 26.18 грн |
| 4500+ | 25.07 грн |
| 7500+ | 22.35 грн |
| 10500+ | 22.12 грн |
| TL331VSN4T3G |
![]() |
Виробник: onsemi
Description: IC COMPARATOR 1 GEN PUR 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 850ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
Description: IC COMPARATOR 1 GEN PUR 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 850ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 22.42 грн |
| 6000+ | 21.06 грн |
| VEC2415-TL-W-Z |
Виробник: onsemi
Description: MOSFET 2N-CH 60V 3A SOT28
Part Status: Obsolete
Supplier Device Package: SOT-28FL/VEC8
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 60V 3A SOT28
Part Status: Obsolete
Supplier Device Package: SOT-28FL/VEC8
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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| SPS-READER-GEVK |
![]() |
Виробник: onsemi
Description: IOT IDK SPS READER EVALUA
Packaging: Bulk
Function: Smart Passive
Type: Sensor
Contents: Board(s)
Utilized IC / Part: NCP163, NCP3170, NCP3337, NCP5663, NLAS323, PCA9655E
Platform: IoT Development Kit (IDK)
Part Status: Active
Description: IOT IDK SPS READER EVALUA
Packaging: Bulk
Function: Smart Passive
Type: Sensor
Contents: Board(s)
Utilized IC / Part: NCP163, NCP3170, NCP3337, NCP5663, NLAS323, PCA9655E
Platform: IoT Development Kit (IDK)
Part Status: Active
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