Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDB0250N807L | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
FDB0300N1007L | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
![]() |
FDBL86566-F085 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FDD86380-F085 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V Power Dissipation (Max): 75W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FPF2595UCX | onsemi |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
![]() |
S1GHE | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 782 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: AEC-Q101 |
на замовлення 129000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
SS13HE | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.6 ns Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
SS14HE | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.6 ns Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
SS16HE | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.3 ns Technology: Schottky Capacitance @ Vr, F: 43pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 639000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FAN49103AUC340X | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 20-UFBGA, WLCSP Output Type: Programmable (Fixed) Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up/Step-Down Current - Output: 2.5A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 1.8MHz Voltage - Input (Max): 5.5V Topology: Buck-Boost Supplier Device Package: 20-WLCSP (1.96x1.56) Synchronous Rectifier: Yes Voltage - Output (Max): 4V Voltage - Input (Min): 2.5V Voltage - Output (Min/Fixed): 2.8V, 3.4V |
на замовлення 48178 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
FDB0170N607L | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V |
на замовлення 55821 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
FDB0190N807L | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V |
на замовлення 423 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
FDB0250N807L | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
FDB0300N1007L | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V |
на замовлення 794 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FDBL86566-F085 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 19933 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FPF2595UCX | onsemi |
![]() |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
![]() |
S1GHE | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 782 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: AEC-Q101 |
на замовлення 131479 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
SS13HE | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.6 ns Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
на замовлення 61260 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
SS14HE | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.6 ns Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
на замовлення 48544 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
SS16HE | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.3 ns Technology: Schottky Capacitance @ Vr, F: 43pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 641256 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
NCP1399AADR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 50% Frequency - Switching: 20kHz ~ 750kHz Internal Switch(s): No Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 9.5V ~ 20V Supplier Device Package: 16-SOIC Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 15.8 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
1N5339WS | onsemi |
Description: DIODE ZENER 5.6V 5W AXIAL Packaging: Bulk Tolerance: ±5% Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 1 Ohms Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 2 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
2SK4098FS | onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V Power Dissipation (Max): 2W Supplier Device Package: TO-220F-3FS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
![]() |
2SK4125-1EX | onsemi |
Description: MOSFET N-CH 600V 17A TO3P-3L Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Supplier Device Package: TO-3P-3L Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
![]() |
NRVTSA4100ET3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 4 A Current - Reverse Leakage @ Vr: 9 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
![]() |
NRVTSA4100ET3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 4 A Current - Reverse Leakage @ Vr: 9 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
![]() |
FGY160T65SPD-F085 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 132 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/98ns Switching Energy: 12.4mJ (on), 5.7mJ (off) Test Condition: 400V, 160A, 15V Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 480 A Power - Max: 882 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 32870 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FNB81060T3 | onsemi |
![]() Packaging: Tube Package / Case: 25-PowerDIP Module (0.815", 20.70mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 10 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
![]() |
FODM1007 | onsemi |
![]() Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 80% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 160% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 67342 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FODM1009 | onsemi |
![]() Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 85 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FAN54511AUCX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 63-UFBGA, WLCSP Number of Cells: 1 Mounting Type: Surface Mount Interface: I2C, USB Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 63-WLCSP Charge Current - Max: 3.2A Programmable Features: Timer Fault Protection: Over Temperature Voltage - Supply (Max): 13.2V Current - Charging: Constant - Programmable Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
![]() |
FODM1007R2 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 80% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 160% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
![]() |
FODM1009R2 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FODM1007R2 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 80% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 160% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 253 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FODM1009R2 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 70V Rise / Fall Time (Typ): 5.7µs, 8.5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 4791 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FDD86569-F085 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 13895 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FAN54005UCX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 20-UFBGA, WLCSP Number of Cells: 1 Mounting Type: Surface Mount Interface: I2C, USB Operating Temperature: -30°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 20-WLCSP (1.96x1.56) Charge Current - Max: 1.45A Programmable Features: Current, Voltage Voltage - Supply (Max): 6V Battery Pack Voltage: 4.5V Current - Charging: Constant - Programmable |
на замовлення 529 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FDBL0240N100 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V |
на замовлення 19084 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FDBL0260N100 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V |
на замовлення 17815 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FUSB302MPX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 14-WFQFN Exposed Pad Function: Controller Interface: USB Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.8V ~ 5.5V Current - Supply: 25µA Protocol: USB Standards: USB 3.1 Supplier Device Package: 14-MLP (2.5x2.5) Part Status: Not For New Designs DigiKey Programmable: Not Verified |
на замовлення 1368 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
HCPL2630SDM | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 30mA Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 2 Current - Output / Channel: 25 mA |
на замовлення 66393 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
HCPL2631SDM | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 30mA Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 5kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 2 Current - Output / Channel: 25 mA |
на замовлення 3186 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
HCPL2731SDM | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.3V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 500% @ 1.6mA Supplier Device Package: 8-SMD Voltage - Output (Max): 18V Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 20 mA |
на замовлення 3065 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
US2MA | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 24831 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FCH041N65EF-F155 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 5V @ 7.6mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 298 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12560 pF @ 100 V |
на замовлення 358 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FFSH20120ADN-F155 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 433 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FCH060N80-F155 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 29A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 5.8mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14685 pF @ 100 V |
на замовлення 3104 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FCH067N65S3-F155 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V |
на замовлення 492 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FGH75T65SQD-F155 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 43 ns Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Switching Energy: 760µJ (on), 180µJ (off) Gate Charge: 128 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W |
на замовлення 386 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FCH023N65S3-F155 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 37.5A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 7.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7160 pF @ 400 V |
на замовлення 129 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FUSB302BUCX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLCSP Function: Controller Interface: USB Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.8V ~ 5.5V Current - Supply: 25µA Protocol: USB Standards: USB 3.1 Supplier Device Package: 9-WLCSP (1.21x1.26) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FL5160MX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-SOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 16V ~ 18V Applications: AC Dimmer Controller Current - Supply: 600µA Supplier Device Package: 10-SOIC Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
FDMQ8205 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 12-WDFN Exposed Pad Mounting Type: Surface Mount Type: Bridge Rectifier Operating Temperature: -40°C ~ 85°C Voltage - Supply: 57V (Max) Applications: Power Over Ethernet (PoE) Internal Switch(s): Yes FET Type: N and P-Channel Ratio - Input:Output: Bridge (2) Supplier Device Package: 12-MLP (5x4.5) Current - Supply: 400 µA |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FUSB302BUCX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, WLCSP Function: Controller Interface: USB Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.8V ~ 5.5V Current - Supply: 25µA Protocol: USB Standards: USB 3.1 Supplier Device Package: 9-WLCSP (1.21x1.26) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 8400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
FL5160MX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 10-SOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 16V ~ 18V Applications: AC Dimmer Controller Current - Supply: 600µA Supplier Device Package: 10-SOIC Part Status: Active |
на замовлення 6167 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
FDMQ8205 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 12-WDFN Exposed Pad Mounting Type: Surface Mount Type: Bridge Rectifier Operating Temperature: -40°C ~ 85°C Voltage - Supply: 57V (Max) Applications: Power Over Ethernet (PoE) Internal Switch(s): Yes FET Type: N and P-Channel Ratio - Input:Output: Bridge (2) Supplier Device Package: 12-MLP (5x4.5) Current - Supply: 400 µA |
на замовлення 12910 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
ESD5102FCT5G | onsemi |
![]() Packaging: Tray Package / Case: 3-XFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 5.5pF @ 1MHz (Max) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 3-DSN (0.73x0.25) Bidirectional Channels: 2 Voltage - Breakdown (Min): 3.68V Voltage - Clamping (Max) @ Ipp: 6.5V (Typ) Power Line Protection: No |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
LM321SN3T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 300µA Slew Rate: 0.4V/µs Gain Bandwidth Product: 900 kHz Current - Input Bias: 10 nA Voltage - Input Offset: 300 µV Supplier Device Package: 5-TSOP Part Status: Active Number of Circuits: 1 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
![]() |
MC74LCX244MN2TWG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-QFN (2.5x4.5) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
![]() |
MCH3383-TL-W | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 1.5A, 2.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: SC-70FL/MCPH3 Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. |
FDB0250N807L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 240A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V
Description: MOSFET N-CH 80V 240A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
FDB0300N1007L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
FDBL86566-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 103.04 грн |
FDD86380-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 40 V
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 32.60 грн |
5000+ | 29.19 грн |
7500+ | 29.01 грн |
FPF2595UCX |
![]() |
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP
товару немає в наявності
В кошику
од. на суму грн.
S1GHE |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 400V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 782 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 782 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.00 грн |
6000+ | 6.24 грн |
9000+ | 6.10 грн |
15000+ | 5.63 грн |
21000+ | 5.61 грн |
30000+ | 5.49 грн |
75000+ | 5.20 грн |
SS13HE |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.73 грн |
6000+ | 7.14 грн |
9000+ | 6.42 грн |
30000+ | 5.94 грн |
SS14HE |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 6.48 грн |
6000+ | 5.98 грн |
9000+ | 5.94 грн |
15000+ | 5.56 грн |
21000+ | 5.45 грн |
30000+ | 5.28 грн |
SS16HE |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 639000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.86 грн |
6000+ | 5.63 грн |
FAN49103AUC340X |
![]() |
Виробник: onsemi
Description: IC REG BCK BST 3.4V 2.5A 20WLCSP
Packaging: Cut Tape (CT)
Package / Case: 20-UFBGA, WLCSP
Output Type: Programmable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.8MHz
Voltage - Input (Max): 5.5V
Topology: Buck-Boost
Supplier Device Package: 20-WLCSP (1.96x1.56)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 2.8V, 3.4V
Description: IC REG BCK BST 3.4V 2.5A 20WLCSP
Packaging: Cut Tape (CT)
Package / Case: 20-UFBGA, WLCSP
Output Type: Programmable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.8MHz
Voltage - Input (Max): 5.5V
Topology: Buck-Boost
Supplier Device Package: 20-WLCSP (1.96x1.56)
Synchronous Rectifier: Yes
Voltage - Output (Max): 4V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 2.8V, 3.4V
на замовлення 48178 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 90.04 грн |
10+ | 77.52 грн |
25+ | 73.55 грн |
100+ | 53.02 грн |
250+ | 46.85 грн |
500+ | 44.39 грн |
1000+ | 33.96 грн |
FDB0170N607L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 300A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V
Description: MOSFET N-CH 60V 300A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V
на замовлення 55821 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 357.08 грн |
10+ | 229.26 грн |
100+ | 164.23 грн |
FDB0190N807L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 270A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V
Description: MOSFET N-CH 80V 270A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V
на замовлення 423 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 396.66 грн |
10+ | 281.28 грн |
100+ | 215.17 грн |
FDB0250N807L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 240A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V
Description: MOSFET N-CH 80V 240A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 378.81 грн |
10+ | 255.72 грн |
100+ | 191.00 грн |
FDB0300N1007L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V
на замовлення 794 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 327.58 грн |
10+ | 242.79 грн |
100+ | 209.35 грн |
FDBL86566-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 19933 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 240.64 грн |
10+ | 160.26 грн |
100+ | 117.22 грн |
500+ | 93.12 грн |
FPF2595UCX |
![]() |
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP
Description: IC PWR SWITCH P-CHAN 1:1 12WLCSP
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
S1GHE |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 400V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 782 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 782 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
на замовлення 131479 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.17 грн |
17+ | 17.64 грн |
100+ | 13.54 грн |
500+ | 9.50 грн |
1000+ | 8.54 грн |
SS13HE |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 61260 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 28.72 грн |
14+ | 21.38 грн |
100+ | 12.85 грн |
500+ | 11.16 грн |
1000+ | 7.59 грн |
SS14HE |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.6 ns
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
на замовлення 48544 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.17 грн |
17+ | 17.72 грн |
100+ | 14.03 грн |
500+ | 9.91 грн |
1000+ | 8.86 грн |
SS16HE |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3 ns
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
на замовлення 641256 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.20 грн |
31+ | 9.94 грн |
100+ | 9.53 грн |
500+ | 7.72 грн |
NCP1399AADR2G |
![]() |
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 9.5V ~ 20V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 15.8 V
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 9.5V ~ 20V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 15.8 V
товару немає в наявності
В кошику
од. на суму грн.
1N5339WS |
Виробник: onsemi
Description: DIODE ZENER 5.6V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 2
Description: DIODE ZENER 5.6V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 2
товару немає в наявності
В кошику
од. на суму грн.
2SK4098FS |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 6A TO220F-3FS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 2W
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
Description: MOSFET N-CH 600V 6A TO220F-3FS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 2W
Supplier Device Package: TO-220F-3FS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
2SK4125-1EX |
Виробник: onsemi
Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Description: MOSFET N-CH 600V 17A TO3P-3L
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3P-3L
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
NRVTSA4100ET3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 4A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 4 A
Current - Reverse Leakage @ Vr: 9 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 4A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 4 A
Current - Reverse Leakage @ Vr: 9 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
NRVTSA4100ET3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 4A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 4 A
Current - Reverse Leakage @ Vr: 9 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 4A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 4 A
Current - Reverse Leakage @ Vr: 9 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
FGY160T65SPD-F085 |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 650V 240A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/98ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 400V, 160A, 15V
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 882 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 240A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/98ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 400V, 160A, 15V
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 882 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 32870 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1084.42 грн |
30+ | 643.15 грн |
120+ | 555.29 грн |
510+ | 518.73 грн |
FNB81060T3 |
![]() |
Виробник: onsemi
Description: MODULE SPM 600V 10A 25PWRDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.815", 20.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
Description: MODULE SPM 600V 10A 25PWRDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.815", 20.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 10 A
Voltage: 600 V
товару немає в наявності
В кошику
од. на суму грн.
FODM1007 |
![]() |
Виробник: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 67342 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 44.25 грн |
11+ | 29.45 грн |
100+ | 21.32 грн |
500+ | 16.56 грн |
1000+ | 15.42 грн |
2000+ | 14.46 грн |
5000+ | 13.19 грн |
10000+ | 12.54 грн |
25000+ | 11.83 грн |
FODM1009 |
![]() |
Виробник: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 85 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.69 грн |
11+ | 28.33 грн |
FAN54511AUCX |
![]() |
Виробник: onsemi
Description: IC BATT CHG LI-ION 1CELL 63WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 63-WLCSP
Charge Current - Max: 3.2A
Programmable Features: Timer
Fault Protection: Over Temperature
Voltage - Supply (Max): 13.2V
Current - Charging: Constant - Programmable
Part Status: Obsolete
Description: IC BATT CHG LI-ION 1CELL 63WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 63-WLCSP
Charge Current - Max: 3.2A
Programmable Features: Timer
Fault Protection: Over Temperature
Voltage - Supply (Max): 13.2V
Current - Charging: Constant - Programmable
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
FODM1007R2 |
![]() |
Виробник: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику
од. на суму грн.
FODM1009R2 |
![]() |
Виробник: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 16.47 грн |
FODM1007R2 |
![]() |
Виробник: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 80% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 160% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 253 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 46.58 грн |
10+ | 31.02 грн |
100+ | 22.45 грн |
FODM1009R2 |
![]() |
Виробник: onsemi
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 5KV 1CH TRANS LSOP4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 5.7µs, 8.5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 4791 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 46.58 грн |
10+ | 31.25 грн |
100+ | 22.63 грн |
500+ | 17.60 грн |
1000+ | 16.41 грн |
FDD86569-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13895 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 135.84 грн |
10+ | 83.42 грн |
100+ | 56.31 грн |
500+ | 41.90 грн |
1000+ | 38.38 грн |
FAN54005UCX |
![]() |
Виробник: onsemi
Description: IC BATT CHG LI-ION 1CELL 20WLCSP
Packaging: Cut Tape (CT)
Package / Case: 20-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 20-WLCSP (1.96x1.56)
Charge Current - Max: 1.45A
Programmable Features: Current, Voltage
Voltage - Supply (Max): 6V
Battery Pack Voltage: 4.5V
Current - Charging: Constant - Programmable
Description: IC BATT CHG LI-ION 1CELL 20WLCSP
Packaging: Cut Tape (CT)
Package / Case: 20-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 20-WLCSP (1.96x1.56)
Charge Current - Max: 1.45A
Programmable Features: Current, Voltage
Voltage - Supply (Max): 6V
Battery Pack Voltage: 4.5V
Current - Charging: Constant - Programmable
на замовлення 529 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 152.14 грн |
10+ | 91.05 грн |
25+ | 76.63 грн |
100+ | 56.70 грн |
250+ | 49.21 грн |
500+ | 44.60 грн |
FDBL0240N100 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
на замовлення 19084 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 443.24 грн |
10+ | 295.71 грн |
100+ | 214.88 грн |
500+ | 172.95 грн |
FDBL0260N100 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 200A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V
Description: MOSFET N-CH 100V 200A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9265 pF @ 50 V
на замовлення 17815 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 403.65 грн |
10+ | 271.49 грн |
100+ | 222.61 грн |
FUSB302MPX |
![]() |
Виробник: onsemi
Description: IC USB TYPE C CTLR PROGR 14MLP
Packaging: Cut Tape (CT)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 25µA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-MLP (2.5x2.5)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC USB TYPE C CTLR PROGR 14MLP
Packaging: Cut Tape (CT)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 25µA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-MLP (2.5x2.5)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1368 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 76.07 грн |
10+ | 52.92 грн |
25+ | 47.84 грн |
100+ | 39.64 грн |
250+ | 37.13 грн |
500+ | 35.62 грн |
1000+ | 33.81 грн |
HCPL2630SDM |
![]() |
Виробник: onsemi
Description: OPTOISO 5KV 2CH OPN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 2
Current - Output / Channel: 25 mA
Description: OPTOISO 5KV 2CH OPN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 2
Current - Output / Channel: 25 mA
на замовлення 66393 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 182.42 грн |
10+ | 127.08 грн |
100+ | 98.30 грн |
500+ | 80.37 грн |
HCPL2631SDM |
![]() |
Виробник: onsemi
Description: OPTOISO 5KV 2CH OPN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 2
Current - Output / Channel: 25 mA
Description: OPTOISO 5KV 2CH OPN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 2
Current - Output / Channel: 25 mA
на замовлення 3186 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 208.04 грн |
10+ | 145.91 грн |
100+ | 113.57 грн |
500+ | 93.25 грн |
HCPL2731SDM |
![]() |
Виробник: onsemi
Description: OPTOISOLATOR 5KV 2CH DARL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 18V
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISOLATOR 5KV 2CH DARL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 18V
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
на замовлення 3065 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 171.55 грн |
10+ | 119.30 грн |
100+ | 91.99 грн |
500+ | 75.06 грн |
US2MA |
![]() |
Виробник: onsemi
Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 24831 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 13.97 грн |
36+ | 8.45 грн |
100+ | 8.41 грн |
FCH041N65EF-F155 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 650V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 7.6mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 298 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12560 pF @ 100 V
Description: MOSFET N-CH 650V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 7.6mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 298 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12560 pF @ 100 V
на замовлення 358 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 999.03 грн |
10+ | 700.71 грн |
FFSH20120ADN-F155 |
![]() |
Виробник: onsemi
Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 433 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 762.28 грн |
10+ | 647.11 грн |
100+ | 559.68 грн |
FCH060N80-F155 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 800V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 29A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.8mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14685 pF @ 100 V
Description: MOSFET N-CH 800V 56A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 29A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.8mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14685 pF @ 100 V
на замовлення 3104 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1120.90 грн |
10+ | 796.09 грн |
450+ | 696.91 грн |
FCH067N65S3-F155 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 650V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
Description: MOSFET N-CH 650V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
на замовлення 492 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 378.03 грн |
30+ | 305.30 грн |
120+ | 296.59 грн |
FGH75T65SQD-F155 |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Switching Energy: 760µJ (on), 180µJ (off)
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Switching Energy: 760µJ (on), 180µJ (off)
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
на замовлення 386 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 505.34 грн |
30+ | 279.71 грн |
120+ | 234.20 грн |
FCH023N65S3-F155 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 650V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 37.5A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7160 pF @ 400 V
Description: MOSFET N-CH 650V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 37.5A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7160 pF @ 400 V
на замовлення 129 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 870.95 грн |
FUSB302BUCX |
![]() |
Виробник: onsemi
Description: IC USB TYPE C CTLR PROGR 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 25µA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 9-WLCSP (1.21x1.26)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC USB TYPE C CTLR PROGR 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 25µA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 9-WLCSP (1.21x1.26)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 27.55 грн |
FL5160MX |
![]() |
Виробник: onsemi
Description: AC DIMMER CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 16V ~ 18V
Applications: AC Dimmer Controller
Current - Supply: 600µA
Supplier Device Package: 10-SOIC
Part Status: Active
Description: AC DIMMER CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 16V ~ 18V
Applications: AC Dimmer Controller
Current - Supply: 600µA
Supplier Device Package: 10-SOIC
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 32.80 грн |
5000+ | 29.29 грн |
FDMQ8205 |
![]() |
Виробник: onsemi
Description: IC OR CTRLR BRIDGE RECT 12MLP
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Bridge Rectifier
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 57V (Max)
Applications: Power Over Ethernet (PoE)
Internal Switch(s): Yes
FET Type: N and P-Channel
Ratio - Input:Output: Bridge (2)
Supplier Device Package: 12-MLP (5x4.5)
Current - Supply: 400 µA
Description: IC OR CTRLR BRIDGE RECT 12MLP
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Bridge Rectifier
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 57V (Max)
Applications: Power Over Ethernet (PoE)
Internal Switch(s): Yes
FET Type: N and P-Channel
Ratio - Input:Output: Bridge (2)
Supplier Device Package: 12-MLP (5x4.5)
Current - Supply: 400 µA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 191.24 грн |
FUSB302BUCX |
![]() |
Виробник: onsemi
Description: IC USB TYPE C CTLR PROGR 9WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 25µA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 9-WLCSP (1.21x1.26)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC USB TYPE C CTLR PROGR 9WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 25µA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 9-WLCSP (1.21x1.26)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 8400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 112.56 грн |
10+ | 66.75 грн |
25+ | 55.85 грн |
100+ | 40.78 грн |
250+ | 35.07 грн |
500+ | 31.56 грн |
1000+ | 28.15 грн |
FL5160MX |
![]() |
Виробник: onsemi
Description: AC DIMMER CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 16V ~ 18V
Applications: AC Dimmer Controller
Current - Supply: 600µA
Supplier Device Package: 10-SOIC
Part Status: Active
Description: AC DIMMER CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 16V ~ 18V
Applications: AC Dimmer Controller
Current - Supply: 600µA
Supplier Device Package: 10-SOIC
Part Status: Active
на замовлення 6167 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 126.53 грн |
10+ | 75.35 грн |
25+ | 63.30 грн |
100+ | 46.57 грн |
250+ | 40.27 грн |
500+ | 36.39 грн |
1000+ | 32.60 грн |
FDMQ8205 |
![]() |
Виробник: onsemi
Description: IC OR CTRLR BRIDGE RECT 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Bridge Rectifier
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 57V (Max)
Applications: Power Over Ethernet (PoE)
Internal Switch(s): Yes
FET Type: N and P-Channel
Ratio - Input:Output: Bridge (2)
Supplier Device Package: 12-MLP (5x4.5)
Current - Supply: 400 µA
Description: IC OR CTRLR BRIDGE RECT 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Bridge Rectifier
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 57V (Max)
Applications: Power Over Ethernet (PoE)
Internal Switch(s): Yes
FET Type: N and P-Channel
Ratio - Input:Output: Bridge (2)
Supplier Device Package: 12-MLP (5x4.5)
Current - Supply: 400 µA
на замовлення 12910 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 475.06 грн |
10+ | 307.75 грн |
100+ | 223.14 грн |
500+ | 175.58 грн |
1000+ | 172.82 грн |
ESD5102FCT5G |
![]() |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 6.5VC 3DSN
Packaging: Tray
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5.5pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 3-DSN (0.73x0.25)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.68V
Voltage - Clamping (Max) @ Ipp: 6.5V (Typ)
Power Line Protection: No
Description: TVS DIODE 3.3VWM 6.5VC 3DSN
Packaging: Tray
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5.5pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 3-DSN (0.73x0.25)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.68V
Voltage - Clamping (Max) @ Ipp: 6.5V (Typ)
Power Line Protection: No
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 32.60 грн |
13+ | 24.82 грн |
25+ | 23.71 грн |
80+ | 13.98 грн |
230+ | 13.82 грн |
440+ | 12.94 грн |
945+ | 8.65 грн |
2400+ | 7.97 грн |
4900+ | 7.64 грн |
LM321SN3T1G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 300µA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 10 nA
Voltage - Input Offset: 300 µV
Supplier Device Package: 5-TSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 300µA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 10 nA
Voltage - Input Offset: 300 µV
Supplier Device Package: 5-TSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.00 грн |
6000+ | 6.09 грн |
9000+ | 5.76 грн |
15000+ | 5.05 грн |
21000+ | 4.84 грн |
30000+ | 4.64 грн |
MC74LCX244MN2TWG |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-QFN (2.5x4.5)
Part Status: Obsolete
Description: IC BUFFER NON-INVERT 5.5V 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-QFN (2.5x4.5)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
MCH3383-TL-W |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 12V 3.5A SC70
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 1.5A, 2.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
Description: MOSFET P-CH 12V 3.5A SC70
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 1.5A, 2.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
товару немає в наявності
В кошику
од. на суму грн.