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NTMFS6H801NT1G NTMFS6H801NT1G onsemi ntmfs6h801n-d.pdf Description: MOSFET N-CH 80V 23A/157A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 6462 шт:
термін постачання 21-31 дні (днів)
2+220.85 грн
10+138.20 грн
100+95.65 грн
500+72.69 грн
Мінімальне замовлення: 2 шт
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NVMFD5C446NLT1G NVMFD5C446NLT1G onsemi nvmfd5c446nl-d.pdf Description: MOSFET 2N-CH 40V 25A 8DFN
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
на замовлення 4707 шт:
термін постачання 21-31 дні (днів)
1+350.26 грн
10+224.16 грн
100+160.18 грн
500+143.94 грн
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NVMFD5C462NLT1G NVMFD5C462NLT1G onsemi nvmfd5c462nl-d.pdf Description: MOSFET 2N-CH 40V 18A/84A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 84A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 50W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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NVMFD5C650NLT1G NVMFD5C650NLT1G onsemi nvmfd5c650nl-d.pdf Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1692 шт:
термін постачання 21-31 дні (днів)
1+374.28 грн
10+240.28 грн
100+172.46 грн
500+157.47 грн
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NVMFS6H818NWFT1G NVMFS6H818NWFT1G onsemi nvmfs6h818n-d.pdf Description: MOSFET N-CH 80V 20A/123A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 190µA
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 2188 шт:
термін постачання 21-31 дні (днів)
2+289.04 грн
10+182.90 грн
100+128.64 грн
500+98.98 грн
Мінімальне замовлення: 2 шт
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NVTFS6H850NTAG NVTFS6H850NTAG onsemi nvtfs6h850n-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 33438 шт:
термін постачання 21-31 дні (днів)
4+102.29 грн
10+62.46 грн
100+41.64 грн
500+30.69 грн
Мінімальне замовлення: 4 шт
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TL331VSN4T3G TL331VSN4T3G onsemi tl331-d.pdf Description: IC COMPARATOR 1 GEN PUR 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 850ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
на замовлення 122854 шт:
термін постачання 21-31 дні (днів)
7+49.59 грн
10+33.58 грн
25+30.21 грн
100+24.83 грн
250+23.14 грн
500+22.13 грн
1000+21.49 грн
Мінімальне замовлення: 7 шт
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ESDM3051N2T5G ESDM3051N2T5G onsemi esdm3051-d.pdf Description: TVS DIODE 5VWM 8.2VC 2X2DFN
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ESDM3551MXT5G ESDM3551MXT5G onsemi esdm3551-d.pdf Description: TVS DIODE 5.5VWM 8.2VC 2X3DFN
Voltage - Clamping (Max) @ Ipp: 8.2V
Voltage - Breakdown (Min): 5.6V
Bidirectional Channels: 1
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 8A
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Applications: USB
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
на замовлення 2776 шт:
термін постачання 21-31 дні (днів)
13+24.02 грн
19+16.27 грн
100+8.20 грн
500+6.28 грн
1000+4.66 грн
2000+3.92 грн
Мінімальне замовлення: 13 шт
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LB11861MC-W-AH onsemi LB11861MC_May2013.pdf Description: IC FAN MOTOR DRIVER 10MFPSK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Bipolar
Supplier Device Package: 10-MFPSK
Voltage - Load: 4.5V ~ 16V
Technology: Bipolar
Applications: Fan Motor Driver
Voltage - Supply: 4.5V ~ 16V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 90°C
Current - Output: 1.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 10-LSOP (0.173", 4.40mm Width)
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LV58063MCZ-AH LV58063MCZ-AH onsemi LV58063MC_Jul2014.pdf Description: IC REG BUCK ADJ 3A 8SOIC/SOP8L
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 8V
Voltage - Output (Max): 28V
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC-EP/SOP8L
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 370kHz
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tube
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FCH099N65S3-F155 FCH099N65S3-F155 onsemi fch099n65s3-d.pdf Description: MOSFET N-CH 650V 30A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1089 шт:
термін постачання 21-31 дні (днів)
1+350.26 грн
30+249.26 грн
120+248.60 грн
510+220.67 грн
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FCP360N65S3R0 FCP360N65S3R0 onsemi FCP360N65S3R0-D.PDF Description: MOSFET N-CH 650V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
на замовлення 141 шт:
термін постачання 21-31 дні (днів)
2+243.32 грн
50+118.05 грн
100+106.79 грн
Мінімальне замовлення: 2 шт
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FCPF250N65S3R0L FCPF250N65S3R0L onsemi fcpf250n65s3r0l-d.pdf Description: MOSFET N-CH 650V 12A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
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FDB9409L-F085 FDB9409L-F085 onsemi fdb9409l_f085-d.pdf Description: MOSFET N-CH 40V 90A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 94W (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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FDC642P-F085P FDC642P-F085P onsemi fdc642p_f085-d.pdf Description: MOSFET P-CH 20V 4A TSOT23-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: TSOT-23-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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FDD4243-F085P FDD4243-F085P onsemi fdd4243_f085-d.pdf Description: MOSFET P-CH 40V 14A TO252
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
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FDD8444-F085P FDD8444-F085P onsemi fdd4685_f085-d.pdf Description: MOSFET N-CH 40V 50A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 153W (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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FDD8445-F085P FDD8445-F085P onsemi FDD8445-F085.pdf Description: MOSFET N-CH 40V 50A TO252
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 79W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
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FDD86250-F085 FDD86250-F085 onsemi fdd86250_f085-d.pdf Description: MOSFET N-CH 150V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 160W (Tj)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+60.84 грн
Мінімальне замовлення: 2500 шт
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FDD9409L-F085 FDD9409L-F085 onsemi fdd9409l_f085-d.pdf Description: MOSFET N-CH 40V 90A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 150W (Tj)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
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FDWS9508L-F085 FDWS9508L-F085 onsemi FDWS9508L-F085-D.PDF Description: MOSFET P-CH 40V 80A 8PQFN
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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FDWS9509L-F085 FDWS9509L-F085 onsemi fdws9509l-f085-d.pdf Description: MOSFET P-CH 40V 65A 8DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-DFN (5.1x6.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 107W (Tj)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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FFSH15120A FFSH15120A onsemi ffsh15120a-d.pdf Description: DIODE SIL CARB 1200V 26A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 936pF @ 1V, 100kHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
1+748.56 грн
30+432.70 грн
В кошику  од. на суму  грн.
FGH40T65SQD-F155 FGH40T65SQD-F155 onsemi fgh40t65sqd-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.4ns/86.4ns
Switching Energy: 138µJ (on), 52µJ (off)
Test Condition: 400V, 10A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
на замовлення 357 шт:
термін постачання 21-31 дні (днів)
1+344.06 грн
30+185.41 грн
120+153.27 грн
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FGH40T65UQDF-F155 FGH40T65UQDF-F155 onsemi fgh40t65uqdf-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/271ns
Switching Energy: 989µJ (on), 310µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 306 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
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FGH75T65SQDT-F155 FGH75T65SQDT-F155 onsemi fgh75t65sqdt-d.pdf Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/120ns
Switching Energy: 300µJ (on), 70µJ (off)
Test Condition: 400V, 18.8A, 4.7Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
на замовлення 197 шт:
термін постачання 21-31 дні (днів)
1+470.37 грн
30+260.48 грн
120+218.19 грн
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FQB34P10TM-F085P FQB34P10TM-F085P onsemi FQB34P10TM-F085_Rev2_Sep2017.pdf Description: MOSFET P-CH 100V 33.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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FSUSB42UMX-SN00404 FSUSB42UMX-SN00404 onsemi Description: USB SWITCH
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 2.4V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Break-Before-Make, USB 2.0
Packaging: Tape & Reel (TR)
Number of Channels: 2
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
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MARS1-AR0136AT3-GEVB MARS1-AR0136AT3-GEVB onsemi MARS1%E2%80%90AR0136AT3%E2%80%90GEVB_Web.pdf Description: MARS AR0136AT HB
Sensor Type: Image Sensor
Packaging: Bulk
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: AR0136AT
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+21803.58 грн
В кошику  од. на суму  грн.
NCL30060B3DR2G NCL30060B3DR2G onsemi ncl30060-d.pdf Description: IC LED DRIVER OFFL NO 3A 7SOIC
Voltage - Supply (Max): 30V
Dimming: No
Supplier Device Package: 7-SOIC
Topology: Flyback, Step-Down (Buck)
Internal Switch(s): No
Current - Output / Channel: 3A
Applications: LED Lighting
Operating Temperature: -40°C ~ 105°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Packaging: Tape & Reel (TR)
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NCP1076ABP100G NCP1076ABP100G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
3+123.21 грн
10+86.93 грн
50+74.35 грн
100+66.13 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
NCP1077BBP100G NCP1077BBP100G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 19 W
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
3+127.08 грн
10+89.77 грн
50+76.84 грн
100+68.35 грн
250+64.38 грн
500+61.99 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
NCP145AMX100TCG NCP145AMX100TCG onsemi ncp145-d.pdf Description: IC REG LINEAR 1V 500MA 4-XDFN
Supplier Device Package: 4-XDFN (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Supply (Max): 110 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
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NCP145AMX120TCG NCP145AMX120TCG onsemi ncp145-d.pdf Description: IC REG LINEAR 1.2V 500MA 4-XDFN
Current - Supply (Max): 110 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 4-XDFN (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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NCP1602ACCSNT1G NCP1602ACCSNT1G onsemi ncp1602-d.pdf Description: IC PFC CTRLR CRM 6TSOP
Current - Startup: 480 µA
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Mode: Critical Conduction (CRM)
Voltage - Supply: 9.5V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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NCP4306DAHZZAASNT1G NCP4306DAHZZAASNT1G onsemi ncp4306-d.pdf Description: IC PM SEC CTRL SYNC RECT 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NCV78247DQ0R2G onsemi Description: NCV78247 LED PIXEL LIGHT
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NCV8163AMX180TBG NCV8163AMX180TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 1.8V 250MA 4-XDFN
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 250mA
PSRR: 92dB ~ 60dB (100Hz ~ 100kHz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-XDFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 20 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
5000+10.41 грн
10000+9.77 грн
15000+9.65 грн
25000+8.92 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
NCV8163AMX270TBG NCV8163AMX270TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 2.7V 250MA 4XDFN
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
3000+13.62 грн
6000+12.27 грн
15000+11.42 грн
30000+10.16 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NCV8163AMX280TBG NCV8163AMX280TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 2.8V 250MA 4XDFN
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+13.62 грн
6000+12.27 грн
15000+11.42 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NCV8163AMX330TBG NCV8163AMX330TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 3.3V 250MA 4XDFN
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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NTB082N65S3F NTB082N65S3F onsemi ntb082n65s3f-d.pdf Description: MOSFET N-CH 650V 40A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
800+309.30 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTHL040N65S3F NTHL040N65S3F onsemi nthl040n65s3f-d.pdf Description: MOSFET N-CH 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
на замовлення 357 шт:
термін постачання 21-31 дні (днів)
1+1192.58 грн
30+715.19 грн
120+629.88 грн
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NTPF082N65S3F NTPF082N65S3F onsemi ntpf082n65s3f-d.pdf Description: MOSFET N-CH 650V 40A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 400 V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
1+543.21 грн
50+284.53 грн
100+261.61 грн
В кошику  од. на суму  грн.
NVMFS5A140PLZT1G NVMFS5A140PLZT1G onsemi nvmfs5a140plz-d.pdf Description: MOSFET P-CH 40V 20A/140A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NVMFS5A140PLZWFT1G NVMFS5A140PLZWFT1G onsemi nvmfs5a140plz-d.pdf Description: MOSFET P-CH 40V 20A/140A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
RURD660S9A-F085P RURD660S9A-F085P onsemi rurd660s9a_f085-d.pdf Description: DIODE GEN PURP 600V 6A TO252AA
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 6A
Technology: Standard
Reverse Recovery Time (trr): 83 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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В кошику  од. на суму  грн.
RURP15100-F085P RURP15100-F085P onsemi rurp15100_f085-d.pdf Description: DIODE STANDARD 1000V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 666 шт:
термін постачання 21-31 дні (днів)
2+167.38 грн
10+103.50 грн
100+70.71 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
RURP1560-F085P RURP1560-F085P onsemi rurp1560_f085-d.pdf Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
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SMMSZ4688T1G SMMSZ4688T1G onsemi mmsz4678t1-d.pdf Description: DIODE ZENER 4.7V 500MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
на замовлення 38935 шт:
термін постачання 21-31 дні (днів)
34+9.30 грн
44+6.94 грн
100+4.95 грн
500+3.61 грн
1000+2.71 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
UD1006FR-H UD1006FR-H onsemi ena1745-d.pdf Description: DIODE GEN PURP 600V 10A
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
2SA1416T-TD-E 2SA1416T-TD-E onsemi 2sa1416-d.pdf Description: TRANS PNP 100V 1A PCP
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
6+56.57 грн
10+33.65 грн
100+21.77 грн
500+15.64 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
2SA1552S-TL-H 2SA1552S-TL-H onsemi en2262-d.pdf Description: TRANS PNP 160V 1.5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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2SB1204T-TL-E onsemi Description: TRANS PNP 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
4+99.96 грн
10+61.11 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
2SB1215S-TL-E 2SB1215S-TL-E onsemi en2539-d.pdf Description: TRANS PNP 100V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 1392 шт:
термін постачання 21-31 дні (днів)
3+106.94 грн
10+64.99 грн
100+43.31 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
2SB1216S-TL-E 2SB1216S-TL-E onsemi 2sb1216_2sd1816-d.pdf Description: TRANS PNP 100V 4A TPFA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TP-FA
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
на замовлення 1071 шт:
термін постачання 21-31 дні (днів)
5+62.77 грн
10+52.38 грн
100+36.26 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
2SB1302S-TD-E 2SB1302S-TD-E onsemi 2sb1302-d.pdf Description: TRANS PNP 20V 5A PCP
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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2SC3649T-TD-E 2SC3649T-TD-E onsemi en2007-d.pdf Description: TRANS NPN 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 6397 шт:
термін постачання 21-31 дні (днів)
4+82.92 грн
10+50.00 грн
100+32.80 грн
500+23.83 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
2SC3649T-TD-H 2SC3649T-TD-H onsemi en2007-d.pdf Description: TRANS NPN 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
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NTMFS6H801NT1G ntmfs6h801n-d.pdf
NTMFS6H801NT1G
Виробник: onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 6462 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+220.85 грн
10+138.20 грн
100+95.65 грн
500+72.69 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
NVMFD5C446NLT1G nvmfd5c446nl-d.pdf
NVMFD5C446NLT1G
Виробник: onsemi
Description: MOSFET 2N-CH 40V 25A 8DFN
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
на замовлення 4707 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+350.26 грн
10+224.16 грн
100+160.18 грн
500+143.94 грн
В кошику  од. на суму  грн.
NVMFD5C462NLT1G nvmfd5c462nl-d.pdf
NVMFD5C462NLT1G
Виробник: onsemi
Description: MOSFET 2N-CH 40V 18A/84A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 84A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 50W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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NVMFD5C650NLT1G nvmfd5c650nl-d.pdf
NVMFD5C650NLT1G
Виробник: onsemi
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1692 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+374.28 грн
10+240.28 грн
100+172.46 грн
500+157.47 грн
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NVMFS6H818NWFT1G nvmfs6h818n-d.pdf
NVMFS6H818NWFT1G
Виробник: onsemi
Description: MOSFET N-CH 80V 20A/123A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 190µA
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 2188 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+289.04 грн
10+182.90 грн
100+128.64 грн
500+98.98 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
NVTFS6H850NTAG nvtfs6h850n-d.pdf
NVTFS6H850NTAG
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
на замовлення 33438 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+102.29 грн
10+62.46 грн
100+41.64 грн
500+30.69 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
TL331VSN4T3G tl331-d.pdf
TL331VSN4T3G
Виробник: onsemi
Description: IC COMPARATOR 1 GEN PUR 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 850ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
на замовлення 122854 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
7+49.59 грн
10+33.58 грн
25+30.21 грн
100+24.83 грн
250+23.14 грн
500+22.13 грн
1000+21.49 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
ESDM3051N2T5G esdm3051-d.pdf
ESDM3051N2T5G
Виробник: onsemi
Description: TVS DIODE 5VWM 8.2VC 2X2DFN
товару немає в наявності
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ESDM3551MXT5G esdm3551-d.pdf
ESDM3551MXT5G
Виробник: onsemi
Description: TVS DIODE 5.5VWM 8.2VC 2X3DFN
Voltage - Clamping (Max) @ Ipp: 8.2V
Voltage - Breakdown (Min): 5.6V
Bidirectional Channels: 1
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 8A
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Applications: USB
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
на замовлення 2776 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
13+24.02 грн
19+16.27 грн
100+8.20 грн
500+6.28 грн
1000+4.66 грн
2000+3.92 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
LB11861MC-W-AH LB11861MC_May2013.pdf
Виробник: onsemi
Description: IC FAN MOTOR DRIVER 10MFPSK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Bipolar
Supplier Device Package: 10-MFPSK
Voltage - Load: 4.5V ~ 16V
Technology: Bipolar
Applications: Fan Motor Driver
Voltage - Supply: 4.5V ~ 16V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 90°C
Current - Output: 1.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 10-LSOP (0.173", 4.40mm Width)
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LV58063MCZ-AH LV58063MC_Jul2014.pdf
LV58063MCZ-AH
Виробник: onsemi
Description: IC REG BUCK ADJ 3A 8SOIC/SOP8L
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 8V
Voltage - Output (Max): 28V
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC-EP/SOP8L
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 370kHz
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tube
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FCH099N65S3-F155 fch099n65s3-d.pdf
FCH099N65S3-F155
Виробник: onsemi
Description: MOSFET N-CH 650V 30A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1089 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+350.26 грн
30+249.26 грн
120+248.60 грн
510+220.67 грн
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FCP360N65S3R0 FCP360N65S3R0-D.PDF
FCP360N65S3R0
Виробник: onsemi
Description: MOSFET N-CH 650V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
на замовлення 141 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+243.32 грн
50+118.05 грн
100+106.79 грн
Мінімальне замовлення: 2 шт
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FCPF250N65S3R0L fcpf250n65s3r0l-d.pdf
FCPF250N65S3R0L
Виробник: onsemi
Description: MOSFET N-CH 650V 12A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
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FDB9409L-F085 fdb9409l_f085-d.pdf
FDB9409L-F085
Виробник: onsemi
Description: MOSFET N-CH 40V 90A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 94W (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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FDC642P-F085P fdc642p_f085-d.pdf
FDC642P-F085P
Виробник: onsemi
Description: MOSFET P-CH 20V 4A TSOT23-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: TSOT-23-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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FDD4243-F085P fdd4243_f085-d.pdf
FDD4243-F085P
Виробник: onsemi
Description: MOSFET P-CH 40V 14A TO252
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
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FDD8444-F085P fdd4685_f085-d.pdf
FDD8444-F085P
Виробник: onsemi
Description: MOSFET N-CH 40V 50A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 153W (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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FDD8445-F085P FDD8445-F085.pdf
FDD8445-F085P
Виробник: onsemi
Description: MOSFET N-CH 40V 50A TO252
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 79W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
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FDD86250-F085 fdd86250_f085-d.pdf
FDD86250-F085
Виробник: onsemi
Description: MOSFET N-CH 150V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 160W (Tj)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+60.84 грн
Мінімальне замовлення: 2500 шт
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FDD9409L-F085 fdd9409l_f085-d.pdf
FDD9409L-F085
Виробник: onsemi
Description: MOSFET N-CH 40V 90A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 150W (Tj)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
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FDWS9508L-F085 FDWS9508L-F085-D.PDF
FDWS9508L-F085
Виробник: onsemi
Description: MOSFET P-CH 40V 80A 8PQFN
товару немає в наявності
Мінімальне замовлення: 3000 шт
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FDWS9509L-F085 fdws9509l-f085-d.pdf
FDWS9509L-F085
Виробник: onsemi
Description: MOSFET P-CH 40V 65A 8DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-DFN (5.1x6.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 107W (Tj)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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FFSH15120A ffsh15120a-d.pdf
FFSH15120A
Виробник: onsemi
Description: DIODE SIL CARB 1200V 26A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 936pF @ 1V, 100kHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+748.56 грн
30+432.70 грн
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FGH40T65SQD-F155 fgh40t65sqd-d.pdf
FGH40T65SQD-F155
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.4ns/86.4ns
Switching Energy: 138µJ (on), 52µJ (off)
Test Condition: 400V, 10A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
на замовлення 357 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+344.06 грн
30+185.41 грн
120+153.27 грн
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FGH40T65UQDF-F155 fgh40t65uqdf-d.pdf
FGH40T65UQDF-F155
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/271ns
Switching Energy: 989µJ (on), 310µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 306 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
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FGH75T65SQDT-F155 fgh75t65sqdt-d.pdf
FGH75T65SQDT-F155
Виробник: onsemi
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/120ns
Switching Energy: 300µJ (on), 70µJ (off)
Test Condition: 400V, 18.8A, 4.7Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
на замовлення 197 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+470.37 грн
30+260.48 грн
120+218.19 грн
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FQB34P10TM-F085P FQB34P10TM-F085_Rev2_Sep2017.pdf
FQB34P10TM-F085P
Виробник: onsemi
Description: MOSFET P-CH 100V 33.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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FSUSB42UMX-SN00404
FSUSB42UMX-SN00404
Виробник: onsemi
Description: USB SWITCH
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 2.4V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Break-Before-Make, USB 2.0
Packaging: Tape & Reel (TR)
Number of Channels: 2
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
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MARS1-AR0136AT3-GEVB MARS1%E2%80%90AR0136AT3%E2%80%90GEVB_Web.pdf
MARS1-AR0136AT3-GEVB
Виробник: onsemi
Description: MARS AR0136AT HB
Sensor Type: Image Sensor
Packaging: Bulk
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: AR0136AT
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+21803.58 грн
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NCL30060B3DR2G ncl30060-d.pdf
NCL30060B3DR2G
Виробник: onsemi
Description: IC LED DRIVER OFFL NO 3A 7SOIC
Voltage - Supply (Max): 30V
Dimming: No
Supplier Device Package: 7-SOIC
Topology: Flyback, Step-Down (Buck)
Internal Switch(s): No
Current - Output / Channel: 3A
Applications: LED Lighting
Operating Temperature: -40°C ~ 105°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Packaging: Tape & Reel (TR)
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NCP1076ABP100G ncp1076a-d.pdf
NCP1076ABP100G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+123.21 грн
10+86.93 грн
50+74.35 грн
100+66.13 грн
Мінімальне замовлення: 3 шт
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NCP1077BBP100G ncp1076a-d.pdf
NCP1077BBP100G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 19 W
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+127.08 грн
10+89.77 грн
50+76.84 грн
100+68.35 грн
250+64.38 грн
500+61.99 грн
Мінімальне замовлення: 3 шт
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NCP145AMX100TCG ncp145-d.pdf
NCP145AMX100TCG
Виробник: onsemi
Description: IC REG LINEAR 1V 500MA 4-XDFN
Supplier Device Package: 4-XDFN (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Supply (Max): 110 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
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NCP145AMX120TCG ncp145-d.pdf
NCP145AMX120TCG
Виробник: onsemi
Description: IC REG LINEAR 1.2V 500MA 4-XDFN
Current - Supply (Max): 110 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 4-XDFN (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
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NCP1602ACCSNT1G ncp1602-d.pdf
NCP1602ACCSNT1G
Виробник: onsemi
Description: IC PFC CTRLR CRM 6TSOP
Current - Startup: 480 µA
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Mode: Critical Conduction (CRM)
Voltage - Supply: 9.5V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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NCP4306DAHZZAASNT1G ncp4306-d.pdf
NCP4306DAHZZAASNT1G
Виробник: onsemi
Description: IC PM SEC CTRL SYNC RECT 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
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NCV78247DQ0R2G
Виробник: onsemi
Description: NCV78247 LED PIXEL LIGHT
товару немає в наявності
Мінімальне замовлення: 1500 шт
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NCV8163AMX180TBG ncv8163-d.pdf
NCV8163AMX180TBG
Виробник: onsemi
Description: IC REG LINEAR 1.8V 250MA 4-XDFN
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 250mA
PSRR: 92dB ~ 60dB (100Hz ~ 100kHz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-XDFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 20 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+10.41 грн
10000+9.77 грн
15000+9.65 грн
25000+8.92 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
NCV8163AMX270TBG ncv8163-d.pdf
NCV8163AMX270TBG
Виробник: onsemi
Description: IC REG LINEAR 2.7V 250MA 4XDFN
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+13.62 грн
6000+12.27 грн
15000+11.42 грн
30000+10.16 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NCV8163AMX280TBG ncv8163-d.pdf
NCV8163AMX280TBG
Виробник: onsemi
Description: IC REG LINEAR 2.8V 250MA 4XDFN
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+13.62 грн
6000+12.27 грн
15000+11.42 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NCV8163AMX330TBG ncv8163-d.pdf
NCV8163AMX330TBG
Виробник: onsemi
Description: IC REG LINEAR 3.3V 250MA 4XDFN
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NTB082N65S3F ntb082n65s3f-d.pdf
NTB082N65S3F
Виробник: onsemi
Description: MOSFET N-CH 650V 40A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+309.30 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTHL040N65S3F nthl040n65s3f-d.pdf
NTHL040N65S3F
Виробник: onsemi
Description: MOSFET N-CH 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
на замовлення 357 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1192.58 грн
30+715.19 грн
120+629.88 грн
В кошику  од. на суму  грн.
NTPF082N65S3F ntpf082n65s3f-d.pdf
NTPF082N65S3F
Виробник: onsemi
Description: MOSFET N-CH 650V 40A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 400 V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+543.21 грн
50+284.53 грн
100+261.61 грн
В кошику  од. на суму  грн.
NVMFS5A140PLZT1G nvmfs5a140plz-d.pdf
NVMFS5A140PLZT1G
Виробник: onsemi
Description: MOSFET P-CH 40V 20A/140A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NVMFS5A140PLZWFT1G nvmfs5a140plz-d.pdf
NVMFS5A140PLZWFT1G
Виробник: onsemi
Description: MOSFET P-CH 40V 20A/140A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
RURD660S9A-F085P rurd660s9a_f085-d.pdf
RURD660S9A-F085P
Виробник: onsemi
Description: DIODE GEN PURP 600V 6A TO252AA
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 6A
Technology: Standard
Reverse Recovery Time (trr): 83 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
RURP15100-F085P rurp15100_f085-d.pdf
RURP15100-F085P
Виробник: onsemi
Description: DIODE STANDARD 1000V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 666 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+167.38 грн
10+103.50 грн
100+70.71 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
RURP1560-F085P rurp1560_f085-d.pdf
RURP1560-F085P
Виробник: onsemi
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
SMMSZ4688T1G mmsz4678t1-d.pdf
SMMSZ4688T1G
Виробник: onsemi
Description: DIODE ZENER 4.7V 500MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
на замовлення 38935 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
34+9.30 грн
44+6.94 грн
100+4.95 грн
500+3.61 грн
1000+2.71 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
UD1006FR-H ena1745-d.pdf
UD1006FR-H
Виробник: onsemi
Description: DIODE GEN PURP 600V 10A
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
2SA1416T-TD-E 2sa1416-d.pdf
2SA1416T-TD-E
Виробник: onsemi
Description: TRANS PNP 100V 1A PCP
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+56.57 грн
10+33.65 грн
100+21.77 грн
500+15.64 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
2SA1552S-TL-H en2262-d.pdf
2SA1552S-TL-H
Виробник: onsemi
Description: TRANS PNP 160V 1.5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB1204T-TL-E
Виробник: onsemi
Description: TRANS PNP 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+99.96 грн
10+61.11 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
2SB1215S-TL-E en2539-d.pdf
2SB1215S-TL-E
Виробник: onsemi
Description: TRANS PNP 100V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 1392 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+106.94 грн
10+64.99 грн
100+43.31 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
2SB1216S-TL-E 2sb1216_2sd1816-d.pdf
2SB1216S-TL-E
Виробник: onsemi
Description: TRANS PNP 100V 4A TPFA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TP-FA
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
на замовлення 1071 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+62.77 грн
10+52.38 грн
100+36.26 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
2SB1302S-TD-E 2sb1302-d.pdf
2SB1302S-TD-E
Виробник: onsemi
Description: TRANS PNP 20V 5A PCP
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
2SC3649T-TD-E en2007-d.pdf
2SC3649T-TD-E
Виробник: onsemi
Description: TRANS NPN 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 6397 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+82.92 грн
10+50.00 грн
100+32.80 грн
500+23.83 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
2SC3649T-TD-H en2007-d.pdf
2SC3649T-TD-H
Виробник: onsemi
Description: TRANS NPN 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
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