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FCH125N65S3R0-F155 FCH125N65S3R0-F155 onsemi fch125n65s3r0-d.pdf Description: MOSFET N-CH 650V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
на замовлення 433 шт:
термін постачання 21-31 дні (днів)
1+539.98 грн
30+300.02 грн
120+251.69 грн
В кошику  од. на суму  грн.
FCMT250N65S3 FCMT250N65S3 onsemi fcmt250n65s3-d.pdf Description: MOSFET N-CH 650V 12A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+138.80 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FCP125N65S3R0 FCP125N65S3R0 onsemi fcp125n65s3r0-d.pdf Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
на замовлення 1570 шт:
термін постачання 21-31 дні (днів)
1+396.38 грн
50+200.08 грн
100+182.50 грн
500+142.37 грн
1000+135.38 грн
В кошику  од. на суму  грн.
FCPF190N65S3R0L FCPF190N65S3R0L onsemi fcpf190n65s3r0l-d.pdf Description: MOSFET N-CH 650V 17A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
товару немає в наявності
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FCPF360N65S3R0L FCPF360N65S3R0L onsemi fcpf360n65s3r0l-d.pdf Description: MOSFET N-CH 650V 10A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
товару немає в наявності
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FCPF600N65S3R0L FCPF600N65S3R0L onsemi fcpf600n65s3r0l-d.pdf Description: MOSFET N-CH 650V 6A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
товару немає в наявності
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FDBL86066-F085 FDBL86066-F085 onsemi fdbl86066-f085-d.pdf Description: MOSFET N-CH 100V 185A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 50 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+131.90 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
FDMS4D0N12C FDMS4D0N12C onsemi fdms4d0n12c-d.pdf Description: MOSFET N-CH 120V 18.5A/114A 8QFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 114A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 67A, 10V
Power Dissipation (Max): 2.7W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 370A
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 60 V
товару немає в наявності
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FFSD1065A FFSD1065A onsemi ffsd1065a-d.pdf Description: 650V 10A SIC SBD
товару немає в наявності
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FFSH1665A FFSH1665A onsemi ffsh1665a-d.pdf Description: DIODE SIL CARB 650V 23A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 887pF @ 1V, 100kHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
товару немає в наявності
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FFSH2065A FFSH2065A onsemi ffsh2065a-d.pdf Description: DIODE SIL CARB 650V 25A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1085pF @ 1V, 100kHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
1+612.20 грн
30+344.63 грн
120+290.94 грн
В кошику  од. на суму  грн.
FFSH30120A FFSH30120A onsemi ffsh30120a-d.pdf Description: DIODE SIL CARB 1.2KV 46A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1740pF @ 1V, 100kHz
Current - Average Rectified (Io): 46A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
товару немає в наявності
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FFSH4065A FFSH4065A onsemi ffsh4065a-d.pdf Description: DIODE SIL CARB 650V 48A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1989pF @ 1V, 100kHz
Current - Average Rectified (Io): 48A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 551 шт:
термін постачання 21-31 дні (днів)
1+920.40 грн
30+536.77 грн
120+460.22 грн
510+429.27 грн
В кошику  од. на суму  грн.
FFSPF1065A FFSPF1065A onsemi ffspf1065a-d.pdf Description: DIODE SIC 650V 10A TO220F2FS
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 930 шт:
термін постачання 21-31 дні (днів)
1+377.06 грн
50+189.91 грн
100+173.18 грн
500+135.00 грн
В кошику  од. на суму  грн.
FFSPF2065A FFSPF2065A onsemi ffspf2065a-d.pdf Description: DIODE SIC 650V 20A TO220F2FS
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1085pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
товару немає в наявності
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FGH40T120SQDNL4 FGH40T120SQDNL4 onsemi fgh40t120sqdnl4-d.pdf Description: IGBT TRENCH FS 1200V 160A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/220ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 221 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 454 W
на замовлення 205 шт:
термін постачання 21-31 дні (днів)
1+726.41 грн
30+413.61 грн
120+350.99 грн
В кошику  од. на суму  грн.
FGH60T65SQD-F155 FGH60T65SQD-F155 onsemi fgh60t65sqd-f155-d.pdf Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20.8ns/102ns
Switching Energy: 227µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 4.7Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 333 W
на замовлення 13781 шт:
термін постачання 21-31 дні (днів)
1+461.88 грн
30+253.41 грн
120+211.32 грн
510+169.38 грн
1020+165.86 грн
В кошику  од. на суму  грн.
FODM3052V-NF098 FODM3052V-NF098 onsemi fodm3053_nf098-d.pdf Description: 4SO RP TRIAC VDE
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 450µA (Typ)
Supplier Device Package: 4-MFP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 2982 шт:
термін постачання 21-31 дні (днів)
3+148.64 грн
10+91.78 грн
100+65.72 грн
500+52.05 грн
1000+49.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FSUSB242UCX FSUSB242UCX onsemi Description: TYPE C USB PROTECT SWITCH
Features: Break-Before-Make, USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 1GHz
Supplier Device Package: 9-WLCSP (1.2x1.2)
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Not For New Designs
Number of Channels: 2
товару немає в наявності
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FUSB302BGEVB FUSB302BGEVB onsemi fusb302b-d.pdf Description: EVAL BOARD FOR FUSB302B
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s)
Utilized IC / Part: FUSB302B
Supplied Contents: Board(s)
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+31914.14 грн
В кошику  од. на суму  грн.
FUSB302BVMPX FUSB302BVMPX onsemi fusb302b-d.pdf Description: IC USB CONTROLLER I2C 14WQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 21V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-WQFN (2.5x2.5)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
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FUSB302TGEVB FUSB302TGEVB onsemi fusb302t-d.pdf Description: EVAL BOARD FOR FUSB302T
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s)
Utilized IC / Part: FUSB302T
Supplied Contents: Board(s)
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+6753.51 грн
В кошику  од. на суму  грн.
FUSB307BGEVB FUSB307BGEVB onsemi fusb307b-d.pdf Description: EVAL BOARD FOR FUSB307B
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Utilized IC / Part: FUSB307B
Supplied Contents: Board(s)
товару немає в наявності
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FUSB307BMPX FUSB307BMPX onsemi fusb307b-d.pdf Description: IC USB CONTROLLER I2C 16WQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 16-WQFN (3x3)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+110.96 грн
6000+104.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
LV8548MCSLDGEVK LV8548MCSLDGEVK onsemi lv8548mc-d.pdf Description: EVAL BOARD FOR LV8548MC
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: LV8548MC
Supplied Contents: Board(s)
Primary Attributes: Motors (DC)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+6226.96 грн
В кошику  од. на суму  грн.
NCD5702DR2G NCD5702DR2G onsemi ncd5702-d.pdf Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 9.2ns, 7.9ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.75V, 4.3V
Current - Peak Output (Source, Sink): 7.8A, 6.8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
2500+89.44 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NCP1075ABP065G NCP1075ABP065G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 14 W
на замовлення 103 шт:
термін постачання 21-31 дні (днів)
4+103.29 грн
10+72.38 грн
50+61.59 грн
100+54.65 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NCP1075ABP100G NCP1075ABP100G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 14 W
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NCP1075BBP100G NCP1075BBP100G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 14 W
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NCP1075BBP130G NCP1075BBP130G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 14 W
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NCP1076BBP100G NCP1076BBP100G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
на замовлення 26739 шт:
термін постачання 21-31 дні (днів)
2+174.67 грн
10+105.69 грн
50+79.17 грн
100+66.35 грн
250+57.80 грн
500+52.55 грн
1000+47.35 грн
2500+42.68 грн
5000+41.17 грн
Мінімальне замовлення: 2
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NCP1076BBP130G NCP1076BBP130G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
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NCP1077BBP065G NCP1077BBP065G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 19 W
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NCP1077BBP130G NCP1077BBP130G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 19 W
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NCP1079BBP130G NCP1079BBP130G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 41 W
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NCP1239KD65R2G NCP1239KD65R2G onsemi ncp1239-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: EN, Soft Start
Part Status: Active
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
2500+31.16 грн
5000+27.76 грн
7500+26.64 грн
Мінімальне замовлення: 2500
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NCP13992AADR2G NCP13992AADR2G onsemi ncp13992-d.pdf Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 20V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: EN, Frequency Control, Soft Start, Sync
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NCP51530ADR2G NCP51530ADR2G onsemi ncp51530-d.pdf Description: IC HALF BRIDGE DRIVER 2A 8SOIC
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 17V
Applications: General Purpose
Current - Output / Channel: 2A
Current - Peak Output: 2.2A
Technology: Power MOSFET
Voltage - Load: 700V
Supplier Device Package: 8-SOIC
Fault Protection: UVLO
Load Type: Inductive, Capacitive
Part Status: Active
на замовлення 67500 шт:
термін постачання 21-31 дні (днів)
2500+46.20 грн
5000+42.82 грн
12500+41.48 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NCP718AMTADJTBG NCP718AMTADJTBG onsemi ncp718-d.pdf Description: IC REG LIN POS ADJ 300MA 6-WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Soft Start
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.49V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
3000+28.24 грн
6000+25.13 грн
9000+24.09 грн
15000+22.42 грн
Мінімальне замовлення: 3000
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NCS213RSQT2G NCS213RSQT2G onsemi ncs210r-d.pdf Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 5 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 90 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
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NCS333ASQ3T2G NCS333ASQ3T2G onsemi ncs333-d.pdf Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 21µA
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 3.5 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 11 mA
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 1479000 шт:
термін постачання 21-31 дні (днів)
3000+18.67 грн
6000+17.51 грн
9000+17.27 грн
15000+15.97 грн
21000+15.82 грн
30000+15.69 грн
Мінімальне замовлення: 3000
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NL17SZ07EDFT2G NL17SZ07EDFT2G onsemi Description: IC BUFFER NON-INVERT 5.5V SC-88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Obsolete
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NOA1213CUTAG onsemi NOA1213.pdf Description: SENSOR OPT 590NM AMBIENT 6CUDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Wavelength: 590nm
Output Type: Current
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 6-CUDFN (1.6x1.6)
Proximity Detection: No
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NRVHP820MFDT3G NRVHP820MFDT3G onsemi nhp820mfd-d.pdf Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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NRVHP820MFDWFT1G NRVHP820MFDWFT1G onsemi nhp820mfd-d.pdf Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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NRVHP8H200MFDT1G NRVHP8H200MFDT1G onsemi nrvhp8h200mfd-d.pdf Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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NRVHP8H200MFDT3G NRVHP8H200MFDT3G onsemi nrvhp8h200mfd-d.pdf Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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NRVHP8H200MFDWFT1G NRVHP8H200MFDWFT1G onsemi nrvhp8h200mfd-d.pdf Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+47.56 грн
3000+42.50 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
NSR201MXT5G NSR201MXT5G onsemi nsr201mx-d.pdf Description: RF DIODE SCHOTTKY 2V 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Resistance @ If, F: 18Ohm @ 10mA, 1MHz
Voltage - Peak Reverse (Max): 2V
Supplier Device Package: 2-X2DFN (1x0.6)
Part Status: Active
Current - Max: 50 mA
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NSVF4015SG4T1G NSVF4015SG4T1G onsemi nsvf4015sg4-d.pdf Description: RF TRANS NPN 12V 10GHZ SC82FL/
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 17dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SC-82FL/MCPH4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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NTHL065N65S3F NTHL065N65S3F onsemi nthl065n65s3f-d.pdf Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.6mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
на замовлення 69029 шт:
термін постачання 21-31 дні (днів)
1+912.00 грн
30+529.63 грн
120+453.31 грн
510+406.73 грн
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NTHL110N65S3F NTHL110N65S3F onsemi nthl110n65s3f-d.pdf Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V
на замовлення 680 шт:
термін постачання 21-31 дні (днів)
1+627.32 грн
30+353.28 грн
120+298.10 грн
510+249.33 грн
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NTTFS6H850NTAG NTTFS6H850NTAG onsemi nttfs6h850n-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+33.57 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
NVMFS5C426NLT1G NVMFS5C426NLT1G onsemi nvmfs5c426nl-d.pdf Description: MOSFET N-CH 40V 41A/237A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+141.97 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
NVMFS5C638NLT1G NVMFS5C638NLT1G onsemi nvmfs5c638nl-d.pdf Description: MOSFET N-CH 60V 26A/133A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H800NT1G NVMFS6H800NT1G onsemi nvmfs6h800n-d.pdf Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Qualification: AEC-Q101
на замовлення 273000 шт:
термін постачання 21-31 дні (днів)
1500+167.70 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
AR0130CSSC00SPCA0-DPBR2 AR0130CSSC00SPCA0-DPBR2 onsemi ar0130cs-d.pdf Description: 1.2 MP 1/3 CIS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Grade: Automotive
Frames per Second: 60
Qualification: AEC-Q100
товару немає в наявності
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AR0134CSSM00SPCA0-DPBR2 AR0134CSSM00SPCA0-DPBR2 onsemi ar0134cs-d.pdf Description: 1.2 MP 1/3 GS CIS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 60.0
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AR0144CSSM00SUKA0-CPBR2 AR0144CSSM00SUKA0-CPBR2 onsemi ar0144cs?pdf=Y Description: 1MP 1/4 CIS SO
Packaging: Tray
Package / Case: 69-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 69-ODCSP (5.55x5.57)
Frames per Second: 60
товару немає в наявності
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AR0230CSSC00SUEA0-DPBR2 AR0230CSSC00SUEA0-DPBR2 onsemi ar0230cs?pdf=Y Description: 2 MP 1/3 CIS
Packaging: Tray
Package / Case: 80-BGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Frames per Second: 60.0
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
5+2487.43 грн
10+2225.88 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FCH125N65S3R0-F155 fch125n65s3r0-d.pdf
FCH125N65S3R0-F155
Виробник: onsemi
Description: MOSFET N-CH 650V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
на замовлення 433 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+539.98 грн
30+300.02 грн
120+251.69 грн
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FCMT250N65S3 fcmt250n65s3-d.pdf
FCMT250N65S3
Виробник: onsemi
Description: MOSFET N-CH 650V 12A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+138.80 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FCP125N65S3R0 fcp125n65s3r0-d.pdf
FCP125N65S3R0
Виробник: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
на замовлення 1570 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+396.38 грн
50+200.08 грн
100+182.50 грн
500+142.37 грн
1000+135.38 грн
В кошику  од. на суму  грн.
FCPF190N65S3R0L fcpf190n65s3r0l-d.pdf
FCPF190N65S3R0L
Виробник: onsemi
Description: MOSFET N-CH 650V 17A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
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FCPF360N65S3R0L fcpf360n65s3r0l-d.pdf
FCPF360N65S3R0L
Виробник: onsemi
Description: MOSFET N-CH 650V 10A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
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FCPF600N65S3R0L fcpf600n65s3r0l-d.pdf
FCPF600N65S3R0L
Виробник: onsemi
Description: MOSFET N-CH 650V 6A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
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FDBL86066-F085 fdbl86066-f085-d.pdf
FDBL86066-F085
Виробник: onsemi
Description: MOSFET N-CH 100V 185A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 50 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+131.90 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
FDMS4D0N12C fdms4d0n12c-d.pdf
FDMS4D0N12C
Виробник: onsemi
Description: MOSFET N-CH 120V 18.5A/114A 8QFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 114A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 67A, 10V
Power Dissipation (Max): 2.7W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 370A
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 60 V
товару немає в наявності
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FFSD1065A ffsd1065a-d.pdf
FFSD1065A
Виробник: onsemi
Description: 650V 10A SIC SBD
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FFSH1665A ffsh1665a-d.pdf
FFSH1665A
Виробник: onsemi
Description: DIODE SIL CARB 650V 23A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 887pF @ 1V, 100kHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
товару немає в наявності
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FFSH2065A ffsh2065a-d.pdf
FFSH2065A
Виробник: onsemi
Description: DIODE SIL CARB 650V 25A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1085pF @ 1V, 100kHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+612.20 грн
30+344.63 грн
120+290.94 грн
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FFSH30120A ffsh30120a-d.pdf
FFSH30120A
Виробник: onsemi
Description: DIODE SIL CARB 1.2KV 46A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1740pF @ 1V, 100kHz
Current - Average Rectified (Io): 46A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
товару немає в наявності
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FFSH4065A ffsh4065a-d.pdf
FFSH4065A
Виробник: onsemi
Description: DIODE SIL CARB 650V 48A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1989pF @ 1V, 100kHz
Current - Average Rectified (Io): 48A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 551 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+920.40 грн
30+536.77 грн
120+460.22 грн
510+429.27 грн
В кошику  од. на суму  грн.
FFSPF1065A ffspf1065a-d.pdf
FFSPF1065A
Виробник: onsemi
Description: DIODE SIC 650V 10A TO220F2FS
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 930 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+377.06 грн
50+189.91 грн
100+173.18 грн
500+135.00 грн
В кошику  од. на суму  грн.
FFSPF2065A ffspf2065a-d.pdf
FFSPF2065A
Виробник: onsemi
Description: DIODE SIC 650V 20A TO220F2FS
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1085pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
товару немає в наявності
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FGH40T120SQDNL4 fgh40t120sqdnl4-d.pdf
FGH40T120SQDNL4
Виробник: onsemi
Description: IGBT TRENCH FS 1200V 160A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/220ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 221 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 454 W
на замовлення 205 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+726.41 грн
30+413.61 грн
120+350.99 грн
В кошику  од. на суму  грн.
FGH60T65SQD-F155 fgh60t65sqd-f155-d.pdf
FGH60T65SQD-F155
Виробник: onsemi
Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20.8ns/102ns
Switching Energy: 227µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 4.7Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 333 W
на замовлення 13781 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+461.88 грн
30+253.41 грн
120+211.32 грн
510+169.38 грн
1020+165.86 грн
В кошику  од. на суму  грн.
FODM3052V-NF098 fodm3053_nf098-d.pdf
FODM3052V-NF098
Виробник: onsemi
Description: 4SO RP TRIAC VDE
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 450µA (Typ)
Supplier Device Package: 4-MFP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 2982 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+148.64 грн
10+91.78 грн
100+65.72 грн
500+52.05 грн
1000+49.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FSUSB242UCX
FSUSB242UCX
Виробник: onsemi
Description: TYPE C USB PROTECT SWITCH
Features: Break-Before-Make, USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 1GHz
Supplier Device Package: 9-WLCSP (1.2x1.2)
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Not For New Designs
Number of Channels: 2
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FUSB302BGEVB fusb302b-d.pdf
FUSB302BGEVB
Виробник: onsemi
Description: EVAL BOARD FOR FUSB302B
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s)
Utilized IC / Part: FUSB302B
Supplied Contents: Board(s)
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+31914.14 грн
В кошику  од. на суму  грн.
FUSB302BVMPX fusb302b-d.pdf
FUSB302BVMPX
Виробник: onsemi
Description: IC USB CONTROLLER I2C 14WQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 21V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-WQFN (2.5x2.5)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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FUSB302TGEVB fusb302t-d.pdf
FUSB302TGEVB
Виробник: onsemi
Description: EVAL BOARD FOR FUSB302T
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s)
Utilized IC / Part: FUSB302T
Supplied Contents: Board(s)
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6753.51 грн
В кошику  од. на суму  грн.
FUSB307BGEVB fusb307b-d.pdf
FUSB307BGEVB
Виробник: onsemi
Description: EVAL BOARD FOR FUSB307B
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Utilized IC / Part: FUSB307B
Supplied Contents: Board(s)
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FUSB307BMPX fusb307b-d.pdf
FUSB307BMPX
Виробник: onsemi
Description: IC USB CONTROLLER I2C 16WQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 16-WQFN (3x3)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+110.96 грн
6000+104.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
LV8548MCSLDGEVK lv8548mc-d.pdf
LV8548MCSLDGEVK
Виробник: onsemi
Description: EVAL BOARD FOR LV8548MC
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: LV8548MC
Supplied Contents: Board(s)
Primary Attributes: Motors (DC)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6226.96 грн
В кошику  од. на суму  грн.
NCD5702DR2G ncd5702-d.pdf
NCD5702DR2G
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 9.2ns, 7.9ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.75V, 4.3V
Current - Peak Output (Source, Sink): 7.8A, 6.8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+89.44 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NCP1075ABP065G ncp1076a-d.pdf
NCP1075ABP065G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 14 W
на замовлення 103 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.29 грн
10+72.38 грн
50+61.59 грн
100+54.65 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NCP1075ABP100G ncp1076a-d.pdf
NCP1075ABP100G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 14 W
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NCP1075BBP100G ncp1076a-d.pdf
NCP1075BBP100G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 14 W
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NCP1075BBP130G ncp1076a-d.pdf
NCP1075BBP130G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 14 W
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NCP1076BBP100G ncp1076a-d.pdf
NCP1076BBP100G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
на замовлення 26739 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.67 грн
10+105.69 грн
50+79.17 грн
100+66.35 грн
250+57.80 грн
500+52.55 грн
1000+47.35 грн
2500+42.68 грн
5000+41.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NCP1076BBP130G ncp1076a-d.pdf
NCP1076BBP130G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
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NCP1077BBP065G ncp1076a-d.pdf
NCP1077BBP065G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 19 W
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NCP1077BBP130G ncp1076a-d.pdf
NCP1077BBP130G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 19 W
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NCP1079BBP130G ncp1076a-d.pdf
NCP1079BBP130G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 41 W
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NCP1239KD65R2G ncp1239-d.pdf
NCP1239KD65R2G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: EN, Soft Start
Part Status: Active
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+31.16 грн
5000+27.76 грн
7500+26.64 грн
Мінімальне замовлення: 2500
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NCP13992AADR2G ncp13992-d.pdf
NCP13992AADR2G
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 20V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: EN, Frequency Control, Soft Start, Sync
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NCP51530ADR2G ncp51530-d.pdf
NCP51530ADR2G
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 2A 8SOIC
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 17V
Applications: General Purpose
Current - Output / Channel: 2A
Current - Peak Output: 2.2A
Technology: Power MOSFET
Voltage - Load: 700V
Supplier Device Package: 8-SOIC
Fault Protection: UVLO
Load Type: Inductive, Capacitive
Part Status: Active
на замовлення 67500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+46.20 грн
5000+42.82 грн
12500+41.48 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NCP718AMTADJTBG ncp718-d.pdf
NCP718AMTADJTBG
Виробник: onsemi
Description: IC REG LIN POS ADJ 300MA 6-WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Soft Start
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.49V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+28.24 грн
6000+25.13 грн
9000+24.09 грн
15000+22.42 грн
Мінімальне замовлення: 3000
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NCS213RSQT2G ncs210r-d.pdf
NCS213RSQT2G
Виробник: onsemi
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 5 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 90 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
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NCS333ASQ3T2G ncs333-d.pdf
NCS333ASQ3T2G
Виробник: onsemi
Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 21µA
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 3.5 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 11 mA
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 1479000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+18.67 грн
6000+17.51 грн
9000+17.27 грн
15000+15.97 грн
21000+15.82 грн
30000+15.69 грн
Мінімальне замовлення: 3000
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NL17SZ07EDFT2G
NL17SZ07EDFT2G
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC-88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Obsolete
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NOA1213CUTAG NOA1213.pdf
Виробник: onsemi
Description: SENSOR OPT 590NM AMBIENT 6CUDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Wavelength: 590nm
Output Type: Current
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 6-CUDFN (1.6x1.6)
Proximity Detection: No
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NRVHP820MFDT3G nhp820mfd-d.pdf
NRVHP820MFDT3G
Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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NRVHP820MFDWFT1G nhp820mfd-d.pdf
NRVHP820MFDWFT1G
Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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NRVHP8H200MFDT1G nrvhp8h200mfd-d.pdf
NRVHP8H200MFDT1G
Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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NRVHP8H200MFDT3G nrvhp8h200mfd-d.pdf
NRVHP8H200MFDT3G
Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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NRVHP8H200MFDWFT1G nrvhp8h200mfd-d.pdf
NRVHP8H200MFDWFT1G
Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+47.56 грн
3000+42.50 грн
Мінімальне замовлення: 1500
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NSR201MXT5G nsr201mx-d.pdf
NSR201MXT5G
Виробник: onsemi
Description: RF DIODE SCHOTTKY 2V 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Resistance @ If, F: 18Ohm @ 10mA, 1MHz
Voltage - Peak Reverse (Max): 2V
Supplier Device Package: 2-X2DFN (1x0.6)
Part Status: Active
Current - Max: 50 mA
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NSVF4015SG4T1G nsvf4015sg4-d.pdf
NSVF4015SG4T1G
Виробник: onsemi
Description: RF TRANS NPN 12V 10GHZ SC82FL/
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 17dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SC-82FL/MCPH4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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NTHL065N65S3F nthl065n65s3f-d.pdf
NTHL065N65S3F
Виробник: onsemi
Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.6mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
на замовлення 69029 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+912.00 грн
30+529.63 грн
120+453.31 грн
510+406.73 грн
В кошику  од. на суму  грн.
NTHL110N65S3F nthl110n65s3f-d.pdf
NTHL110N65S3F
Виробник: onsemi
Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V
на замовлення 680 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+627.32 грн
30+353.28 грн
120+298.10 грн
510+249.33 грн
В кошику  од. на суму  грн.
NTTFS6H850NTAG nttfs6h850n-d.pdf
NTTFS6H850NTAG
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+33.57 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
NVMFS5C426NLT1G nvmfs5c426nl-d.pdf
NVMFS5C426NLT1G
Виробник: onsemi
Description: MOSFET N-CH 40V 41A/237A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+141.97 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
NVMFS5C638NLT1G nvmfs5c638nl-d.pdf
NVMFS5C638NLT1G
Виробник: onsemi
Description: MOSFET N-CH 60V 26A/133A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H800NT1G nvmfs6h800n-d.pdf
NVMFS6H800NT1G
Виробник: onsemi
Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Qualification: AEC-Q101
на замовлення 273000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+167.70 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
AR0130CSSC00SPCA0-DPBR2 ar0130cs-d.pdf
AR0130CSSC00SPCA0-DPBR2
Виробник: onsemi
Description: 1.2 MP 1/3 CIS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Grade: Automotive
Frames per Second: 60
Qualification: AEC-Q100
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AR0134CSSM00SPCA0-DPBR2 ar0134cs-d.pdf
AR0134CSSM00SPCA0-DPBR2
Виробник: onsemi
Description: 1.2 MP 1/3 GS CIS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 60.0
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AR0144CSSM00SUKA0-CPBR2 ar0144cs?pdf=Y
AR0144CSSM00SUKA0-CPBR2
Виробник: onsemi
Description: 1MP 1/4 CIS SO
Packaging: Tray
Package / Case: 69-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 69-ODCSP (5.55x5.57)
Frames per Second: 60
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AR0230CSSC00SUEA0-DPBR2 ar0230cs?pdf=Y
AR0230CSSC00SUEA0-DPBR2
Виробник: onsemi
Description: 2 MP 1/3 CIS
Packaging: Tray
Package / Case: 80-BGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Frames per Second: 60.0
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+2487.43 грн
10+2225.88 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
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