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FDD8445-F085P FDD8445-F085P onsemi FDD8445-F085.pdf Description: MOSFET N-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Qualification: AEC-Q101
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FDD86250-F085 FDD86250-F085 onsemi fdd86250_f085-d.pdf Description: MOSFET N-CH 150V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 160W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 75 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+67.66 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FDD9409L-F085 FDD9409L-F085 onsemi fdd9409l_f085-d.pdf Description: MOSFET N-CH 40V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
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FDWS9508L-F085 FDWS9508L-F085 onsemi FDWS9508L-F085-D.PDF Description: MOSFET P-CH 40V 80A 8PQFN
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FDWS9509L-F085 FDWS9509L-F085 onsemi fdws9509l-f085-d.pdf Description: MOSFET P-CH 40V 65A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Power Dissipation (Max): 107W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN (5.1x6.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
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FFSH15120A FFSH15120A onsemi ffsh15120a-d.pdf Description: DIODE SIL CARB 1200V 26A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 936pF @ 1V, 100kHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 229 шт:
термін постачання 21-31 дні (днів)
1+781.68 грн
30+451.47 грн
120+385.50 грн
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FGH40T65SQD-F155 FGH40T65SQD-F155 onsemi fgh40t65sqd-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.4ns/86.4ns
Switching Energy: 138µJ (on), 52µJ (off)
Test Condition: 400V, 10A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
на замовлення 692 шт:
термін постачання 21-31 дні (днів)
1+345.43 грн
30+186.30 грн
120+154.00 грн
510+122.30 грн
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FGH40T65UQDF-F155 FGH40T65UQDF-F155 onsemi fgh40t65uqdf-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/271ns
Switching Energy: 989µJ (on), 310µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 306 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
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FGH75T65SQDT-F155 FGH75T65SQDT-F155 onsemi fgh75t65sqdt-d.pdf Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/120ns
Switching Energy: 300µJ (on), 70µJ (off)
Test Condition: 400V, 18.8A, 4.7Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
на замовлення 5030 шт:
термін постачання 21-31 дні (днів)
1+511.55 грн
30+283.20 грн
120+237.21 грн
510+190.99 грн
1020+190.77 грн
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FQB34P10TM-F085P FQB34P10TM-F085P onsemi FQB34P10TM-F085_Rev2_Sep2017.pdf Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
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FSUSB42UMX-SN00404 FSUSB42UMX-SN00404 onsemi Description: USB SWITCH
Features: Break-Before-Make, USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 2.4V ~ 4.4V
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 2
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MARS1-AR0136AT3-GEVB MARS1-AR0136AT3-GEVB onsemi MARS1%E2%80%90AR0136AT3%E2%80%90GEVB_Web.pdf Description: MARS AR0136AT HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0136AT
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+21841.35 грн
В кошику  од. на суму  грн.
NCL30060B3DR2G NCL30060B3DR2G onsemi ncl30060-d.pdf Description: IC LED DRIVER OFFL NO 3A 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 3A
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck)
Supplier Device Package: 7-SOIC
Dimming: No
Voltage - Supply (Max): 30V
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NCP1076ABP100G NCP1076ABP100G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
2+170.78 грн
10+104.20 грн
50+78.65 грн
100+66.18 грн
250+57.95 грн
Мінімальне замовлення: 2
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NCP1077BBP100G NCP1077BBP100G onsemi ncp1076a-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 19 W
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
2+218.90 грн
10+133.58 грн
50+101.03 грн
100+85.03 грн
250+74.51 грн
500+68.03 грн
Мінімальне замовлення: 2
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NCP145AMX100TCG NCP145AMX100TCG onsemi ncp145-d.pdf Description: IC REG LINEAR 1V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 110 µA
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NCP145AMX120TCG NCP145AMX120TCG onsemi ncp145-d.pdf Description: IC REG LINEAR 1.2V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 110 µA
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NCP1602ACCSNT1G NCP1602ACCSNT1G onsemi ncp1602-d.pdf Description: IC PFC CTRLR CRM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Mode: Critical Conduction (CRM)
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Current - Startup: 480 µA
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NCP4306DAHZZAASNT1G NCP4306DAHZZAASNT1G onsemi ncp4306-d.pdf Description: SECONDARY SIDE SYNCHRONOU
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
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NCV78247DQ0R2G onsemi Description: NCV78247 LED PIXEL LIGHT
товару немає в наявності
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NCV8163AMX180TBG NCV8163AMX180TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 1.8V 250MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Grade: Automotive
PSRR: 92dB ~ 60dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.25V @ 250mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+12.63 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
NCV8163AMX270TBG NCV8163AMX270TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 2.7V 250MA 4XDFN
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
3000+13.64 грн
6000+12.29 грн
15000+11.44 грн
30000+10.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NCV8163AMX280TBG NCV8163AMX280TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 2.8V 250MA 4XDFN
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+13.64 грн
6000+12.29 грн
15000+11.44 грн
Мінімальне замовлення: 3000
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NCV8163AMX330TBG NCV8163AMX330TBG onsemi ncv8163-d.pdf Description: IC REG LINEAR 3.3V 250MA 4XDFN
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NTB082N65S3F NTB082N65S3F onsemi ntb082n65s3f-d.pdf Description: MOSFET N-CH 650V 40A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
800+302.83 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NTHL040N65S3F NTHL040N65S3F onsemi nthl040n65s3f-d.pdf Description: MOSFET N-CH 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
на замовлення 410 шт:
термін постачання 21-31 дні (днів)
1+1191.54 грн
30+717.95 грн
120+647.00 грн
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NTPF082N65S3F NTPF082N65S3F onsemi ntpf082n65s3f-d.pdf Description: MOSFET N-CH 650V 40A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 400 V
на замовлення 640 шт:
термін постачання 21-31 дні (днів)
2+304.29 грн
50+234.89 грн
Мінімальне замовлення: 2
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NVMFS5A140PLZT1G NVMFS5A140PLZT1G onsemi nvmfs5a140plz-d.pdf Description: MOSFET P-CH 40V 20A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
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NVMFS5A140PLZWFT1G NVMFS5A140PLZWFT1G onsemi nvmfs5a140plz-d.pdf Description: MOSFET P-CH 40V 20A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RURD660S9A-F085P RURD660S9A-F085P onsemi rurd660s9a_f085-d.pdf Description: DIODE GEN PURP 600V 6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 83 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
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RURP15100-F085P RURP15100-F085P onsemi rurp15100_f085-d.pdf Description: DIODE GEN PURP 1KV 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
3+142.05 грн
10+93.06 грн
100+66.18 грн
800+48.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RURP1560-F085P RURP1560-F085P onsemi rurp1560_f085-d.pdf Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 1508 шт:
термін постачання 21-31 дні (днів)
3+135.84 грн
10+62.94 грн
100+58.67 грн
800+46.20 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SMMSZ4688T1G SMMSZ4688T1G onsemi mmsz4678t1-d.pdf Description: DIODE ZENER 4.7V 500MW SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Last Time Buy
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
на замовлення 38935 шт:
термін постачання 21-31 дні (днів)
34+9.32 грн
44+6.95 грн
100+4.96 грн
500+3.61 грн
1000+2.72 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
UD1006FR-H UD1006FR-H onsemi ena1745-d.pdf Description: DIODE GEN PURP 600V 10A
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
2SA1416T-TD-E 2SA1416T-TD-E onsemi 2sa1416-d.pdf Description: TRANS PNP 100V 1A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)
6+57.44 грн
10+34.31 грн
100+22.20 грн
500+15.95 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2SA1418T-TD-E 2SA1418T-TD-E onsemi en1788-d.pdf Description: TRANS PNP 160V 0.7A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Supplier Device Package: PCP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SA1419T-TD-E 2SA1419T-TD-E onsemi Description: TRANS PNP 160V 1.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1419T-TD-H 2SA1419T-TD-H onsemi Description: TRANS PNP 160V 1.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1552S-TL-H 2SA1552S-TL-H onsemi en2262-d.pdf Description: TRANS PNP 160V 1.5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
на замовлення 627 шт:
термін постачання 21-31 дні (днів)
3+115.66 грн
10+70.41 грн
100+47.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2SB1202T-TL-E 2SB1202T-TL-E onsemi Description: TRANS PNP 50V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
2SB1203T-TL-E 2SB1203T-TL-E onsemi 2SB1203%2C2SD1803.pdf Description: TRANS PNP 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB1204T-TL-E 2SB1204T-TL-E onsemi Description: TRANS PNP 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
3+111.78 грн
10+68.10 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2SB1215S-TL-E 2SB1215S-TL-E onsemi en2539-d.pdf Description: TRANS PNP 100V 3A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 119148 шт:
термін постачання 21-31 дні (днів)
4+83.06 грн
10+53.75 грн
100+37.30 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
2SB1216S-TL-E 2SB1216S-TL-E onsemi 2sb1216_2sd1816-d.pdf Description: TRANS PNP 100V 4A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 1071 шт:
термін постачання 21-31 дні (днів)
5+62.88 грн
10+52.47 грн
100+36.32 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
2SB1302S-TD-E 2SB1302S-TD-E onsemi 2sb1302-d.pdf Description: TRANS PNP 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
товару немає в наявності
В кошику  од. на суму  грн.
2SB815-6-TB-E 2SB815-6-TB-E onsemi en694-d.pdf Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SC3649T-TD-E 2SC3649T-TD-E onsemi en2007-d.pdf Description: TRANS NPN 160V 1.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
на замовлення 6397 шт:
термін постачання 21-31 дні (днів)
4+83.06 грн
10+50.08 грн
100+32.85 грн
500+23.87 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
2SC3649T-TD-H 2SC3649T-TD-H onsemi en2007-d.pdf Description: TRANS NPN 160V 1.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SC5347AF-TD-E 2SC5347AF-TD-E onsemi ena1087-d.pdf Description: RF TRANS NPN 12V 4.7GHZ PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8dB
Power - Max: 1.3W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
Frequency - Transition: 4.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: PCP
товару немає в наявності
В кошику  од. на суму  грн.
2SC5551AE-TD-E 2SC5551AE-TD-E onsemi 2sc5551a-d.pdf Description: RF TRANS NPN 30V 3.5GHZ PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 1.3W
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: PCP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
2SC5646A-TL-H 2SC5646A-TL-H onsemi ena1120-d.pdf Description: RF TRANS NPN 4V 12.5GHZ 3SSFP
Packaging: Cut Tape (CT)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB ~ 10.5dB @ 2GHz
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Frequency - Transition: 10GHz ~ 12.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: 3-SSFP
товару немає в наявності
В кошику  од. на суму  грн.
2SC6094-TD-E 2SC6094-TD-E onsemi ena0410-d.pdf Description: TRANS NPN 60V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
товару немає в наявності
В кошику  од. на суму  грн.
2SC6095-TD-E 2SC6095-TD-E onsemi ena0411-d.pdf Description: TRANS NPN 80V 2.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
товару немає в наявності
В кошику  од. на суму  грн.
2SC6096-TD-H 2SC6096-TD-H onsemi ena0434-d.pdf Description: TRANS NPN 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.3 W
товару немає в наявності
В кошику  од. на суму  грн.
2SD1801S-TL-E 2SD1801S-TL-E onsemi en2112-d.pdf Description: TRANS NPN 50V 2A TPFA
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
7+51.23 грн
10+42.23 грн
100+31.52 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
2SD1802T-TL-E 2SD1802T-TL-E onsemi 2sb1202-d.pdf Description: TRANS NPN 50V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 1107 шт:
термін постачання 21-31 дні (днів)
3+111.78 грн
10+68.25 грн
100+45.58 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2SD1803T-TL-E 2SD1803T-TL-E onsemi 2SB1203%2C2SD1803.pdf Description: TRANS NPN 50V 5A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1805F-TL-E 2SD1805F-TL-E onsemi 2sd1805-d.pdf Description: TRANS NPN 20V 5A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
на замовлення 932 шт:
термін постачання 21-31 дні (днів)
6+60.55 грн
10+47.69 грн
100+37.09 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2SD1816T-TL-E 2SD1816T-TL-E onsemi 2sb1216_2sd1816-d.pdf Description: TRANS NPN 100V 4A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
2SK2394-6-TB-E 2SK2394-6-TB-E onsemi 2sk2394-d.pdf Description: JFET N-CH 50MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-CP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
на замовлення 5979 шт:
термін постачання 21-31 дні (днів)
7+47.35 грн
10+35.21 грн
100+23.06 грн
500+16.57 грн
1000+14.94 грн
Мінімальне замовлення: 7
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FDD8445-F085P FDD8445-F085.pdf
FDD8445-F085P
Виробник: onsemi
Description: MOSFET N-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Qualification: AEC-Q101
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FDD86250-F085 fdd86250_f085-d.pdf
FDD86250-F085
Виробник: onsemi
Description: MOSFET N-CH 150V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 160W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 75 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+67.66 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FDD9409L-F085 fdd9409l_f085-d.pdf
FDD9409L-F085
Виробник: onsemi
Description: MOSFET N-CH 40V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
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FDWS9508L-F085 FDWS9508L-F085-D.PDF
FDWS9508L-F085
Виробник: onsemi
Description: MOSFET P-CH 40V 80A 8PQFN
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FDWS9509L-F085 fdws9509l-f085-d.pdf
FDWS9509L-F085
Виробник: onsemi
Description: MOSFET P-CH 40V 65A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Power Dissipation (Max): 107W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN (5.1x6.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Qualification: AEC-Q101
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FFSH15120A ffsh15120a-d.pdf
FFSH15120A
Виробник: onsemi
Description: DIODE SIL CARB 1200V 26A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 936pF @ 1V, 100kHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 229 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+781.68 грн
30+451.47 грн
120+385.50 грн
В кошику  од. на суму  грн.
FGH40T65SQD-F155 fgh40t65sqd-d.pdf
FGH40T65SQD-F155
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.4ns/86.4ns
Switching Energy: 138µJ (on), 52µJ (off)
Test Condition: 400V, 10A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
на замовлення 692 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+345.43 грн
30+186.30 грн
120+154.00 грн
510+122.30 грн
В кошику  од. на суму  грн.
FGH40T65UQDF-F155 fgh40t65uqdf-d.pdf
FGH40T65UQDF-F155
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/271ns
Switching Energy: 989µJ (on), 310µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 306 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
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FGH75T65SQDT-F155 fgh75t65sqdt-d.pdf
FGH75T65SQDT-F155
Виробник: onsemi
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/120ns
Switching Energy: 300µJ (on), 70µJ (off)
Test Condition: 400V, 18.8A, 4.7Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
на замовлення 5030 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+511.55 грн
30+283.20 грн
120+237.21 грн
510+190.99 грн
1020+190.77 грн
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FQB34P10TM-F085P FQB34P10TM-F085_Rev2_Sep2017.pdf
FQB34P10TM-F085P
Виробник: onsemi
Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
товару немає в наявності
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FSUSB42UMX-SN00404
FSUSB42UMX-SN00404
Виробник: onsemi
Description: USB SWITCH
Features: Break-Before-Make, USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-UMLP (1.8x1.4)
Voltage - Supply, Single (V+): 2.4V ~ 4.4V
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 2
товару немає в наявності
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MARS1-AR0136AT3-GEVB MARS1%E2%80%90AR0136AT3%E2%80%90GEVB_Web.pdf
MARS1-AR0136AT3-GEVB
Виробник: onsemi
Description: MARS AR0136AT HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0136AT
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+21841.35 грн
В кошику  од. на суму  грн.
NCL30060B3DR2G ncl30060-d.pdf
NCL30060B3DR2G
Виробник: onsemi
Description: IC LED DRIVER OFFL NO 3A 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 3A
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck)
Supplier Device Package: 7-SOIC
Dimming: No
Voltage - Supply (Max): 30V
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NCP1076ABP100G ncp1076a-d.pdf
NCP1076ABP100G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+170.78 грн
10+104.20 грн
50+78.65 грн
100+66.18 грн
250+57.95 грн
Мінімальне замовлення: 2
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NCP1077BBP100G ncp1076a-d.pdf
NCP1077BBP100G
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 19 W
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+218.90 грн
10+133.58 грн
50+101.03 грн
100+85.03 грн
250+74.51 грн
500+68.03 грн
Мінімальне замовлення: 2
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NCP145AMX100TCG ncp145-d.pdf
NCP145AMX100TCG
Виробник: onsemi
Description: IC REG LINEAR 1V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 110 µA
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NCP145AMX120TCG ncp145-d.pdf
NCP145AMX120TCG
Виробник: onsemi
Description: IC REG LINEAR 1.2V 500MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 110 µA
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NCP1602ACCSNT1G ncp1602-d.pdf
NCP1602ACCSNT1G
Виробник: onsemi
Description: IC PFC CTRLR CRM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Mode: Critical Conduction (CRM)
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Current - Startup: 480 µA
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NCP4306DAHZZAASNT1G ncp4306-d.pdf
NCP4306DAHZZAASNT1G
Виробник: onsemi
Description: SECONDARY SIDE SYNCHRONOU
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
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NCV78247DQ0R2G
Виробник: onsemi
Description: NCV78247 LED PIXEL LIGHT
товару немає в наявності
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NCV8163AMX180TBG ncv8163-d.pdf
NCV8163AMX180TBG
Виробник: onsemi
Description: IC REG LINEAR 1.8V 250MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Grade: Automotive
PSRR: 92dB ~ 60dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.25V @ 250mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+12.63 грн
Мінімальне замовлення: 5000
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NCV8163AMX270TBG ncv8163-d.pdf
NCV8163AMX270TBG
Виробник: onsemi
Description: IC REG LINEAR 2.7V 250MA 4XDFN
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.64 грн
6000+12.29 грн
15000+11.44 грн
30000+10.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NCV8163AMX280TBG ncv8163-d.pdf
NCV8163AMX280TBG
Виробник: onsemi
Description: IC REG LINEAR 2.8V 250MA 4XDFN
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.64 грн
6000+12.29 грн
15000+11.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NCV8163AMX330TBG ncv8163-d.pdf
NCV8163AMX330TBG
Виробник: onsemi
Description: IC REG LINEAR 3.3V 250MA 4XDFN
товару немає в наявності
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NTB082N65S3F ntb082n65s3f-d.pdf
NTB082N65S3F
Виробник: onsemi
Description: MOSFET N-CH 650V 40A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+302.83 грн
Мінімальне замовлення: 800
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NTHL040N65S3F nthl040n65s3f-d.pdf
NTHL040N65S3F
Виробник: onsemi
Description: MOSFET N-CH 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
на замовлення 410 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1191.54 грн
30+717.95 грн
120+647.00 грн
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NTPF082N65S3F ntpf082n65s3f-d.pdf
NTPF082N65S3F
Виробник: onsemi
Description: MOSFET N-CH 650V 40A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 400 V
на замовлення 640 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+304.29 грн
50+234.89 грн
Мінімальне замовлення: 2
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NVMFS5A140PLZT1G nvmfs5a140plz-d.pdf
NVMFS5A140PLZT1G
Виробник: onsemi
Description: MOSFET P-CH 40V 20A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Qualification: AEC-Q101
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NVMFS5A140PLZWFT1G nvmfs5a140plz-d.pdf
NVMFS5A140PLZWFT1G
Виробник: onsemi
Description: MOSFET P-CH 40V 20A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Qualification: AEC-Q101
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RURD660S9A-F085P rurd660s9a_f085-d.pdf
RURD660S9A-F085P
Виробник: onsemi
Description: DIODE GEN PURP 600V 6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 83 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
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RURP15100-F085P rurp15100_f085-d.pdf
RURP15100-F085P
Виробник: onsemi
Description: DIODE GEN PURP 1KV 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+142.05 грн
10+93.06 грн
100+66.18 грн
800+48.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RURP1560-F085P rurp1560_f085-d.pdf
RURP1560-F085P
Виробник: onsemi
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 1508 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+135.84 грн
10+62.94 грн
100+58.67 грн
800+46.20 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SMMSZ4688T1G mmsz4678t1-d.pdf
SMMSZ4688T1G
Виробник: onsemi
Description: DIODE ZENER 4.7V 500MW SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Last Time Buy
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
на замовлення 38935 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
34+9.32 грн
44+6.95 грн
100+4.96 грн
500+3.61 грн
1000+2.72 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
UD1006FR-H ena1745-d.pdf
UD1006FR-H
Виробник: onsemi
Description: DIODE GEN PURP 600V 10A
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
2SA1416T-TD-E 2sa1416-d.pdf
2SA1416T-TD-E
Виробник: onsemi
Description: TRANS PNP 100V 1A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.44 грн
10+34.31 грн
100+22.20 грн
500+15.95 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2SA1418T-TD-E en1788-d.pdf
2SA1418T-TD-E
Виробник: onsemi
Description: TRANS PNP 160V 0.7A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Supplier Device Package: PCP
Part Status: Obsolete
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2SA1419T-TD-E
2SA1419T-TD-E
Виробник: onsemi
Description: TRANS PNP 160V 1.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
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2SA1419T-TD-H
2SA1419T-TD-H
Виробник: onsemi
Description: TRANS PNP 160V 1.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
товару немає в наявності
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2SA1552S-TL-H en2262-d.pdf
2SA1552S-TL-H
Виробник: onsemi
Description: TRANS PNP 160V 1.5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
на замовлення 627 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.66 грн
10+70.41 грн
100+47.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2SB1202T-TL-E
2SB1202T-TL-E
Виробник: onsemi
Description: TRANS PNP 50V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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2SB1203T-TL-E 2SB1203%2C2SD1803.pdf
2SB1203T-TL-E
Виробник: onsemi
Description: TRANS PNP 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
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2SB1204T-TL-E
2SB1204T-TL-E
Виробник: onsemi
Description: TRANS PNP 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+111.78 грн
10+68.10 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2SB1215S-TL-E en2539-d.pdf
2SB1215S-TL-E
Виробник: onsemi
Description: TRANS PNP 100V 3A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 119148 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.06 грн
10+53.75 грн
100+37.30 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
2SB1216S-TL-E 2sb1216_2sd1816-d.pdf
2SB1216S-TL-E
Виробник: onsemi
Description: TRANS PNP 100V 4A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 1071 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+62.88 грн
10+52.47 грн
100+36.32 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
2SB1302S-TD-E 2sb1302-d.pdf
2SB1302S-TD-E
Виробник: onsemi
Description: TRANS PNP 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
товару немає в наявності
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2SB815-6-TB-E en694-d.pdf
2SB815-6-TB-E
Виробник: onsemi
Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SC3649T-TD-E en2007-d.pdf
2SC3649T-TD-E
Виробник: onsemi
Description: TRANS NPN 160V 1.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
на замовлення 6397 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.06 грн
10+50.08 грн
100+32.85 грн
500+23.87 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
2SC3649T-TD-H en2007-d.pdf
2SC3649T-TD-H
Виробник: onsemi
Description: TRANS NPN 160V 1.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
товару немає в наявності
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2SC5347AF-TD-E ena1087-d.pdf
2SC5347AF-TD-E
Виробник: onsemi
Description: RF TRANS NPN 12V 4.7GHZ PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 8dB
Power - Max: 1.3W
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
Frequency - Transition: 4.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: PCP
товару немає в наявності
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2SC5551AE-TD-E 2sc5551a-d.pdf
2SC5551AE-TD-E
Виробник: onsemi
Description: RF TRANS NPN 30V 3.5GHZ PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 1.3W
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 3.5GHz
Supplier Device Package: PCP
Part Status: Obsolete
товару немає в наявності
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2SC5646A-TL-H ena1120-d.pdf
2SC5646A-TL-H
Виробник: onsemi
Description: RF TRANS NPN 4V 12.5GHZ 3SSFP
Packaging: Cut Tape (CT)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB ~ 10.5dB @ 2GHz
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Frequency - Transition: 10GHz ~ 12.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: 3-SSFP
товару немає в наявності
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2SC6094-TD-E ena0410-d.pdf
2SC6094-TD-E
Виробник: onsemi
Description: TRANS NPN 60V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
товару немає в наявності
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2SC6095-TD-E ena0411-d.pdf
2SC6095-TD-E
Виробник: onsemi
Description: TRANS NPN 80V 2.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 350MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
товару немає в наявності
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2SC6096-TD-H ena0434-d.pdf
2SC6096-TD-H
Виробник: onsemi
Description: TRANS NPN 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.3 W
товару немає в наявності
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2SD1801S-TL-E en2112-d.pdf
2SD1801S-TL-E
Виробник: onsemi
Description: TRANS NPN 50V 2A TPFA
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+51.23 грн
10+42.23 грн
100+31.52 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
2SD1802T-TL-E 2sb1202-d.pdf
2SD1802T-TL-E
Виробник: onsemi
Description: TRANS NPN 50V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 1107 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+111.78 грн
10+68.25 грн
100+45.58 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2SD1803T-TL-E 2SB1203%2C2SD1803.pdf
2SD1803T-TL-E
Виробник: onsemi
Description: TRANS NPN 50V 5A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
2SD1805F-TL-E 2sd1805-d.pdf
2SD1805F-TL-E
Виробник: onsemi
Description: TRANS NPN 20V 5A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
на замовлення 932 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.55 грн
10+47.69 грн
100+37.09 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2SD1816T-TL-E 2sb1216_2sd1816-d.pdf
2SD1816T-TL-E
Виробник: onsemi
Description: TRANS NPN 100V 4A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
2SK2394-6-TB-E 2sk2394-d.pdf
2SK2394-6-TB-E
Виробник: onsemi
Description: JFET N-CH 50MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-CP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
на замовлення 5979 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+47.35 грн
10+35.21 грн
100+23.06 грн
500+16.57 грн
1000+14.94 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
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