| Фото | Назва | Виробник | Інформація |
Доступність |
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NCL2801CFADR2G | onsemi |
 Description: IC PFC CTRLR CRM/DCM 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 10.5V ~ 27V Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM) Supplier Device Package: 8-SOIC Part Status: Active Current - Startup: 10 µA |
на замовлення 2224 шт: термін постачання 21-31 дні (днів) |
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NCP13992ABDR2G | onsemi |
Description: IC OFFLINE SW HALF-BRDG 16SOIC Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Duty Cycle: 50% Frequency - Switching: 20kHz ~ 750kHz Internal Switch(s): No Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V Supplier Device Package: 16-SOIC Fault Protection: Over Current, Over/Under Voltage, Short Circuit Voltage - Start Up: 9 V Control Features: EN, Frequency Control, Soft Start, Sync |
на замовлення 24835 шт: термін постачання 21-31 дні (днів) |
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NCP13992ACDR2G | onsemi |
Description: IC OFFLINE SW HALF-BRDG 16SOIC Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Duty Cycle: 50% Frequency - Switching: 20kHz ~ 750kHz Internal Switch(s): No Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V Supplier Device Package: 16-SOIC Fault Protection: Over Current, Over/Under Voltage, Short Circuit Voltage - Start Up: 9 V Control Features: EN, Frequency Control, Soft Start, Sync |
на замовлення 4828 шт: термін постачання 21-31 дні (днів) |
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NCP1616A2DR2G | onsemi |
Description: IC PFC CTLR CCFF/CRM 26KHZ 9SOIC Packaging: Cut Tape (CT) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 9.5V ~ 28V Frequency - Switching: 26kHz Mode: Current Controlled Frequency Foldback (CCFF), Critical Conduction (CRM) Supplier Device Package: 9-SOIC Part Status: Active Current - Startup: 12 mA |
на замовлення 64436 шт: термін постачання 21-31 дні (днів) |
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NCP148AFCT285T2G | onsemi |
Description: IC REG LINEAR 2.85V 450MA 4WLCSP Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 450mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 65 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WLCSP (0.64x0.64) Voltage - Output (Min/Fixed): 2.85V Control Features: Enable Part Status: Active PSRR: 91dB ~ 48dB (100Hz ~ 100kHz) Protection Features: Over Current, Over Temperature |
на замовлення 4780 шт: термін постачання 21-31 дні (днів) |
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NCS20071XV53T2G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT SOT553 Packaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 480µA Slew Rate: 2.4V/µs Gain Bandwidth Product: 3 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 1.3 mV Supplier Device Package: SOT-553 Grade: Automotive Part Status: Active Number of Circuits: 1 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 36 V Qualification: AEC-Q100 |
на замовлення 19800 шт: термін постачання 21-31 дні (днів) |
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NCP4306AAAZZZAMN1TBG | onsemi |
Description: SECONDARY SIDE SYNCHRONOU Packaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 35V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-DFN (2x2.2) Part Status: Active Current - Supply: 1.4 mA DigiKey Programmable: Not Verified |
на замовлення 1113 шт: термін постачання 21-31 дні (днів) |
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NCP4306AADZZZAMN1TBG | onsemi |
Description: SECONDARY SIDE SYNCHRONOU Packaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 35V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-DFN (2x2.2) Part Status: Active Current - Supply: 1.4 mA DigiKey Programmable: Not Verified |
на замовлення 133 шт: термін постачання 21-31 дні (днів) |
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NCP4306AADZZZAMNTWG | onsemi |
Description: SECONDARY SIDE SYNCHRONOU Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 35V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-DFN (4x4) Part Status: Active Current - Supply: 1.4 mA DigiKey Programmable: Not Verified |
на замовлення 3673 шт: термін постачання 21-31 дні (днів) |
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NVB072N65S3 | onsemi |
Description: MOSFET N-CH 650V 44A D2PAK-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 718 шт: термін постачання 21-31 дні (днів) |
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NTB110N65S3HF | onsemi |
Description: MOSFET N-CH 650V 30A D2PAK-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 740µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2635 pF @ 400 V |
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NTMTS0D6N04CLTXG | onsemi |
Description: MOSFET N-CH 40V 554.5A Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 554.5A (Tc) Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V Power Dissipation (Max): 5W Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V |
на замовлення 6477 шт: термін постачання 21-31 дні (днів) |
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NTMTS0D6N04CTXG | onsemi |
Description: MOSFET N-CH 40V 533A Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 533A (Tc) Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V Power Dissipation (Max): 5W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V |
на замовлення 4248 шт: термін постачання 21-31 дні (днів) |
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NTMTS001N06CLTXG | onsemi |
Description: MOSFET N-CH 60V 398.2A Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 398.2A (Tc) Rds On (Max) @ Id, Vgs: 0.81mOhm @ 50A, 10V Power Dissipation (Max): 5W Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V |
на замовлення 1646 шт: термін постачання 21-31 дні (днів) |
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FSA1153UCX | onsemi |
Description: IC SWITCH DP3T X 1 2OHM 12WLCSP Packaging: Cut Tape (CT) Package / Case: 12-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 2Ohm -3db Bandwidth: 500MHz Supplier Device Package: 12-WLCSP (1.41x1.575) Voltage - Supply, Single (V+): 2.7V ~ 5.5V Crosstalk: -120dB @ 1kHz Switch Circuit: DP3T Multiplexer/Demultiplexer Circuit: 3:1 Channel-to-Channel Matching (ΔRon): 200mOhm (Max) Switch Time (Ton, Toff) (Max): 80µs, 400ns (Typ) Channel Capacitance (CS(off), CD(off)): 2.5pF, 7pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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AX5043-1-TW30 | onsemi |
Description: IC RF TXRX ISM<1GHZ 28VFQFN Packaging: Cut Tape (CT) Package / Case: 28-VFQFN Exposed Pad Sensitivity: -137dBm Mounting Type: Surface Mount Frequency: 27MHz ~ 1.05GHz Type: TxRx Only Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 3.6V Power - Output: 16dBm (Max) Current - Receiving: 6.5mA ~ 11mA Data Rate (Max): 125kbps Current - Transmitting: 7.5mA ~ 48mA Supplier Device Package: 28-QFN (5x5) Modulation: 4FSK, ASK, AFSK, FSK, GFSK, GMSK, MSK, PSK RF Family/Standard: General ISM < 1GHz Serial Interfaces: SPI, UART DigiKey Programmable: Not Verified |
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CAT5132ZI-10-GT3 | onsemi |
Description: IC DGTL POT 10KOHM 128TAP 10MSOP Resistance (Ohms): 10k Tolerance: ±20% Features: Selectable Address Packaging: Cut Tape (CT) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: I²C Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 128 Voltage - Supply: 2.7V ~ 5.5V, 8V ~ 16V Taper: Linear Supplier Device Package: 10-MSOP Resistance - Wiper (Ohms) (Typ): 110 Temperature Coefficient (Typ): ±300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
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FDWS9508L-F085 | onsemi |
Description: MOSFET P-CH 40V 80A 8PQFN |
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NB3N502DR2G | onsemi |
Description: IC PLL CLOCK MULTIPLIER 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: CMOS, TTL Frequency - Max: 190MHz Type: PLL Clock Multiplier Input: Clock, Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Ratio - Input:Output: 1:2 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes with Bypass Divider/Multiplier: Yes/Yes Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 4432 шт: термін постачання 21-31 дні (днів) |
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NTHL080N120SC1 | onsemi |
Description: SICFET N-CH 1200V 44A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V |
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NVHL080N120SC1 | onsemi |
Description: SICFET N-CH 1200V 44A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V |
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MC78L05ABPRPG | onsemi |
Description: IC REG LINEAR 5V 100MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Output Type: Fixed Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 30V Number of Regulators: 1 Supplier Device Package: TO-92 (TO-226) Voltage - Output (Min/Fixed): 5V Grade: Automotive Part Status: Active PSRR: 49dB (120Hz) Protection Features: Over Temperature, Short Circuit Qualification: AEC-Q100 |
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5285-MMBFJ201 | onsemi |
Description: JFET N-CH 40V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23-3 Part Status: Obsolete Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 20 V |
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FDN337N-F169 | onsemi |
Description: MOSFET N-CH 30V 2.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
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FDN360P-NBGT003B | onsemi |
Description: MOSFET P-CH 30V 2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V |
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| AR0542MBSC25SUD20 | onsemi |
Description: IC IMAGE SENSOR 5 MP Packaging: Tray Package / Case: Die Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 3.1V Pixel Size: 1.4µm x 1.4µm Active Pixel Array: 2592H x 1944V Supplier Device Package: Die Part Status: Obsolete Frames per Second: 15 |
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BYW29-200H | onsemi |
Description: DIODE GEN PURP 200V 8A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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MBR0520LT1H | onsemi |
Description: DIODE SCHOTTKY 20V 500MA SOD123 Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA Current - Reverse Leakage @ Vr: 250 µA @ 20 V |
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MBR0530T1H | onsemi |
Description: DIODE SCHOTTKY 30V 500MA SOD123 Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA Current - Reverse Leakage @ Vr: 130 µA @ 30 V |
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MBR0540T1H | onsemi |
Description: DIODE SCHOTTKY 40V 500MA SOD123 Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA Current - Reverse Leakage @ Vr: 20 µA @ 40 V |
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MBR1035H | onsemi |
Description: DIODE SCHOTTKY 35V 10A TO220-2 Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 35 V |
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MBR1045H | onsemi |
Description: DIODE SCHOTTKY 45V 10A TO220-2 Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V |
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MBR1060H | onsemi |
Description: DIODE SCHOTTKY 60V 10A TO220-2 Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
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MBR120LSFT1H | onsemi |
Description: DIODE SCHOTTKY 20V 1A SOD123FL Packaging: Bulk Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 400 µA @ 20 V |
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MBR130LSFT1H | onsemi |
Description: DIODE SCHOTTKY 30V 1A SOD123FL Packaging: Bulk Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
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MBR130T1H | onsemi |
Description: DIODE SCHOTTKY 30V 1A SOD123 Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA Current - Reverse Leakage @ Vr: 60 µA @ 30 V |
товар відсутній |
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MBR140SFT1H | onsemi |
Description: DIODE SCHOTTKY 40V 1A SOD123FL Packaging: Bulk Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
товар відсутній |
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MBR1545CTH | onsemi |
Description: DIODE ARR SCHOTT 45V 15A TO220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V |
товар відсутній |
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MBR16100CTH | onsemi | Description: DIODE SCHOTTKY |
товар відсутній |
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MBR1645H | onsemi |
Description: DIODE SCHOTTKY 45V 16A TO220-2 Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 16A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 16 Voltage Coupled to Current - Reverse Leakage @ Vr: 45 Current - Reverse Leakage @ Vr: 200 µA @ 45 V |
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MBR2045CTH | onsemi |
Description: DIODE ARR SCHOTT 45V 10A TO220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 Voltage Coupled to Current - Reverse Leakage @ Vr: 45 Current - Reverse Leakage @ Vr: 100 µA @ 45 V |
товар відсутній |
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MBR20L45CTH | onsemi |
Description: DIODE SCHOTTKY Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
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MBR230LSFT1H | onsemi | Description: DIODE SCHOTTKY |
товар відсутній |
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MBR2535CTH | onsemi |
Description: DIODE ARR SCHOTT 35V 15A TO220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 35 V |
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MBR40250TH | onsemi |
Description: DIODE SCHOTTKY 250V 40A TO220-2 Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Schottky Capacitance @ Vr, F: 500pF @ 5V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 970 mV @ 40 A Current - Reverse Leakage @ Vr: 250 µA @ 250 V |
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MBR41H100CTH | onsemi |
Description: DIODE ARR SCHOTT 100V 20A TO220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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MBRA210ET3H | onsemi |
Description: DIODE SCHOTTKY 10V 2A SMA Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 10 V |
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MBRA210LT3H | onsemi |
Description: DIODE SCHOTTKY 10V 2A SMA Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 2 A Current - Reverse Leakage @ Vr: 700 µA @ 10 V |
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MBRA340T3H | onsemi |
Description: DIODE SCHOTTKY 40V 3A SMA Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 40 V |
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MBRB2515LT4H | onsemi | Description: DIODE SCHOTTKY 15V 25A D2PAK |
товар відсутній |
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| MBRB41H100CT-1H | onsemi |
Description: DIODE SCHOTTKY Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: I2PAK (TO-262) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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MBRD660CTT4H | onsemi |
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
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MBRD835LT4H | onsemi |
Description: DIODE SCHOTTKY 35V 8A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V |
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MBRF20100CTH | onsemi |
Description: DIODE ARR SCHOTT 100V TO220 FP Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220-3 FULLPACK Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 Voltage Coupled to Current - Reverse Leakage @ Vr: 100 Current - Reverse Leakage @ Vr: 150 µA @ 100 V |
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MBRM120ET1H | onsemi | Description: DIODE SCHOTTKY 20V 1A POWERMITE |
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MBRM120LT3H | onsemi | Description: DIODE SCHOTTKY 20V 1A POWERMITE |
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MBRM140T3H | onsemi |
Description: DIODE SCHOTTKY 40V 1A POWERMITE Packaging: Bulk Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
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MBRS1100T3H | onsemi |
Description: DIODE SCHOTTKY 100V 2A SMB Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
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MBRS130LT3H | onsemi |
Description: DIODE SCHOTTKY 30V 2A SMB Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 445 mV @ 2 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
товар відсутній |
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MBRS130T3H | onsemi |
Description: DIODE SCHOTTKY 30V 1A SMB Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
товар відсутній |
| NCL2801CFADR2G |
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Виробник: onsemi
Description: IC PFC CTRLR CRM/DCM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10.5V ~ 27V
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Startup: 10 µA
Description: IC PFC CTRLR CRM/DCM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10.5V ~ 27V
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Startup: 10 µA
на замовлення 2224 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.47 грн |
| 10+ | 53.06 грн |
| 25+ | 49.83 грн |
| 100+ | 35.46 грн |
| 250+ | 30.18 грн |
| 500+ | 28.67 грн |
| 1000+ | 21.52 грн |
| NCP13992ABDR2G |
|
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V
Supplier Device Package: 16-SOIC
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: EN, Frequency Control, Soft Start, Sync
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V
Supplier Device Package: 16-SOIC
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: EN, Frequency Control, Soft Start, Sync
на замовлення 24835 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 141.79 грн |
| 10+ | 122.82 грн |
| 25+ | 115.88 грн |
| 100+ | 87 грн |
| 250+ | 76.13 грн |
| 500+ | 73.95 грн |
| 1000+ | 57.76 грн |
| NCP13992ACDR2G |
|
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V
Supplier Device Package: 16-SOIC
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: EN, Frequency Control, Soft Start, Sync
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 7.5V ~ 10V
Supplier Device Package: 16-SOIC
Fault Protection: Over Current, Over/Under Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: EN, Frequency Control, Soft Start, Sync
на замовлення 4828 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 141.09 грн |
| 10+ | 122.14 грн |
| 25+ | 115.23 грн |
| 100+ | 86.52 грн |
| 250+ | 75.71 грн |
| 500+ | 73.55 грн |
| 1000+ | 57.45 грн |
| NCP1616A2DR2G |
|
Виробник: onsemi
Description: IC PFC CTLR CCFF/CRM 26KHZ 9SOIC
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 28V
Frequency - Switching: 26kHz
Mode: Current Controlled Frequency Foldback (CCFF), Critical Conduction (CRM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 12 mA
Description: IC PFC CTLR CCFF/CRM 26KHZ 9SOIC
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 28V
Frequency - Switching: 26kHz
Mode: Current Controlled Frequency Foldback (CCFF), Critical Conduction (CRM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 12 mA
на замовлення 64436 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.01 грн |
| 10+ | 97.94 грн |
| 25+ | 92.39 грн |
| 100+ | 73.86 грн |
| 250+ | 69.35 грн |
| 500+ | 60.68 грн |
| 1000+ | 49.46 грн |
| NCP148AFCT285T2G |
|
Виробник: onsemi
Description: IC REG LINEAR 2.85V 450MA 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.64x0.64)
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.85V 450MA 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WLCSP (0.64x0.64)
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
на замовлення 4780 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 33.69 грн |
| 11+ | 26.43 грн |
| 25+ | 24.14 грн |
| 100+ | 15.29 грн |
| 250+ | 12.65 грн |
| 500+ | 11.6 грн |
| 1000+ | 8.56 грн |
| 2500+ | 8.04 грн |
| NCS20071XV53T2G |
|
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 480µA
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: SOT-553
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Description: IC OPAMP GP 1 CIRCUIT SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 480µA
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: SOT-553
Grade: Automotive
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
на замовлення 19800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 57.56 грн |
| 10+ | 49 грн |
| 25+ | 46.02 грн |
| 100+ | 32.75 грн |
| 250+ | 27.88 грн |
| 500+ | 26.48 грн |
| 1000+ | 19.88 грн |
| NCP4306AAAZZZAMN1TBG |
|
Виробник: onsemi
Description: SECONDARY SIDE SYNCHRONOU
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-DFN (2x2.2)
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
Description: SECONDARY SIDE SYNCHRONOU
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-DFN (2x2.2)
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
на замовлення 1113 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.23 грн |
| 10+ | 72.73 грн |
| 25+ | 69 грн |
| 100+ | 49.74 грн |
| 250+ | 43.95 грн |
| 500+ | 41.64 грн |
| 1000+ | 31.85 грн |
| NCP4306AADZZZAMN1TBG |
|
Виробник: onsemi
Description: SECONDARY SIDE SYNCHRONOU
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-DFN (2x2.2)
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
Description: SECONDARY SIDE SYNCHRONOU
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-DFN (2x2.2)
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
на замовлення 133 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 73.7 грн |
| 10+ | 63.88 грн |
| 25+ | 60.62 грн |
| 100+ | 43.68 грн |
| NCP4306AADZZZAMNTWG |
|
Виробник: onsemi
Description: SECONDARY SIDE SYNCHRONOU
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-DFN (4x4)
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
Description: SECONDARY SIDE SYNCHRONOU
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-DFN (4x4)
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
на замовлення 3673 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.23 грн |
| 10+ | 72.73 грн |
| 25+ | 69 грн |
| 100+ | 49.74 грн |
| 250+ | 43.95 грн |
| 500+ | 41.64 грн |
| 1000+ | 31.85 грн |
| NVB072N65S3 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 44A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 44A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Qualification: AEC-Q101
на замовлення 718 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 513.81 грн |
| 10+ | 424.35 грн |
| 100+ | 353.64 грн |
| NTB110N65S3HF |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 30A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 740µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2635 pF @ 400 V
Description: MOSFET N-CH 650V 30A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 740µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2635 pF @ 400 V
товар відсутній
| NTMTS0D6N04CLTXG |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 554.5A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 554.5A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 5W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V
Description: MOSFET N-CH 40V 554.5A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 554.5A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 5W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V
на замовлення 6477 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 558.03 грн |
| 10+ | 460.51 грн |
| 100+ | 383.72 грн |
| 500+ | 317.74 грн |
| 1000+ | 285.96 грн |
| NTMTS0D6N04CTXG |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 533A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 533A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V
Power Dissipation (Max): 5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V
Description: MOSFET N-CH 40V 533A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 533A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V
Power Dissipation (Max): 5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V
на замовлення 4248 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 605.76 грн |
| 10+ | 500.26 грн |
| 100+ | 416.86 грн |
| 500+ | 345.19 грн |
| 1000+ | 310.67 грн |
| NTMTS001N06CLTXG |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 398.2A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 398.2A (Tc)
Rds On (Max) @ Id, Vgs: 0.81mOhm @ 50A, 10V
Power Dissipation (Max): 5W
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
Description: MOSFET N-CH 60V 398.2A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 398.2A (Tc)
Rds On (Max) @ Id, Vgs: 0.81mOhm @ 50A, 10V
Power Dissipation (Max): 5W
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
на замовлення 1646 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 784.76 грн |
| 10+ | 694.79 грн |
| 100+ | 586.76 грн |
| 500+ | 489.85 грн |
| 1000+ | 449.31 грн |
| FSA1153UCX |
|
Виробник: onsemi
Description: IC SWITCH DP3T X 1 2OHM 12WLCSP
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 12-WLCSP (1.41x1.575)
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Crosstalk: -120dB @ 1kHz
Switch Circuit: DP3T
Multiplexer/Demultiplexer Circuit: 3:1
Channel-to-Channel Matching (ΔRon): 200mOhm (Max)
Switch Time (Ton, Toff) (Max): 80µs, 400ns (Typ)
Channel Capacitance (CS(off), CD(off)): 2.5pF, 7pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH DP3T X 1 2OHM 12WLCSP
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 12-WLCSP (1.41x1.575)
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Crosstalk: -120dB @ 1kHz
Switch Circuit: DP3T
Multiplexer/Demultiplexer Circuit: 3:1
Channel-to-Channel Matching (ΔRon): 200mOhm (Max)
Switch Time (Ton, Toff) (Max): 80µs, 400ns (Typ)
Channel Capacitance (CS(off), CD(off)): 2.5pF, 7pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 70.19 грн |
| 10+ | 60.29 грн |
| 25+ | 57.24 грн |
| 100+ | 41.26 грн |
| 250+ | 36.46 грн |
| 500+ | 34.54 грн |
| 1000+ | 26.42 грн |
| AX5043-1-TW30 |
|
Виробник: onsemi
Description: IC RF TXRX ISM<1GHZ 28VFQFN
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Sensitivity: -137dBm
Mounting Type: Surface Mount
Frequency: 27MHz ~ 1.05GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 16dBm (Max)
Current - Receiving: 6.5mA ~ 11mA
Data Rate (Max): 125kbps
Current - Transmitting: 7.5mA ~ 48mA
Supplier Device Package: 28-QFN (5x5)
Modulation: 4FSK, ASK, AFSK, FSK, GFSK, GMSK, MSK, PSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI, UART
DigiKey Programmable: Not Verified
Description: IC RF TXRX ISM<1GHZ 28VFQFN
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Sensitivity: -137dBm
Mounting Type: Surface Mount
Frequency: 27MHz ~ 1.05GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 16dBm (Max)
Current - Receiving: 6.5mA ~ 11mA
Data Rate (Max): 125kbps
Current - Transmitting: 7.5mA ~ 48mA
Supplier Device Package: 28-QFN (5x5)
Modulation: 4FSK, ASK, AFSK, FSK, GFSK, GMSK, MSK, PSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI, UART
DigiKey Programmable: Not Verified
товар відсутній
| CAT5132ZI-10-GT3 |
|
Виробник: onsemi
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
Resistance (Ohms): 10k
Tolerance: ±20%
Features: Selectable Address
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: I²C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 128
Voltage - Supply: 2.7V ~ 5.5V, 8V ~ 16V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 110
Temperature Coefficient (Typ): ±300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
Resistance (Ohms): 10k
Tolerance: ±20%
Features: Selectable Address
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: I²C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 128
Voltage - Supply: 2.7V ~ 5.5V, 8V ~ 16V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 110
Temperature Coefficient (Typ): ±300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| NB3N502DR2G |
|
Виробник: onsemi
Description: IC PLL CLOCK MULTIPLIER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 190MHz
Type: PLL Clock Multiplier
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC PLL CLOCK MULTIPLIER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 190MHz
Type: PLL Clock Multiplier
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 4432 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 374.13 грн |
| 10+ | 323.7 грн |
| 25+ | 306.01 грн |
| 100+ | 248.88 грн |
| 250+ | 236.12 грн |
| 500+ | 211.87 грн |
| 1000+ | 175.76 грн |
| NTHL080N120SC1 |
|
Виробник: onsemi
Description: SICFET N-CH 1200V 44A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Description: SICFET N-CH 1200V 44A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
товар відсутній
| NVHL080N120SC1 |
|
Виробник: onsemi
Description: SICFET N-CH 1200V 44A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Description: SICFET N-CH 1200V 44A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
товар відсутній
| MC78L05ABPRPG |
Виробник: onsemi
Description: IC REG LINEAR 5V 100MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
PSRR: 49dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 100MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
PSRR: 49dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
товар відсутній
| 5285-MMBFJ201 |
Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 20 V
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 20 V
товар відсутній
| FDN337N-F169 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET N-CH 30V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
товар відсутній
| FDN360P-NBGT003B |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
Description: MOSFET P-CH 30V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
товар відсутній
| AR0542MBSC25SUD20 |
|
Виробник: onsemi
Description: IC IMAGE SENSOR 5 MP
Packaging: Tray
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 3.1V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 15
Description: IC IMAGE SENSOR 5 MP
Packaging: Tray
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 3.1V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 15
товар відсутній
| BYW29-200H |
Виробник: onsemi
Description: DIODE GEN PURP 200V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
| MBR0520LT1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Description: DIODE SCHOTTKY 20V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
товар відсутній
| MBR0530T1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 130 µA @ 30 V
Description: DIODE SCHOTTKY 30V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 130 µA @ 30 V
товар відсутній
| MBR0540T1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Description: DIODE SCHOTTKY 40V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
товар відсутній
| MBR1035H |
Виробник: onsemi
Description: DIODE SCHOTTKY 35V 10A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Description: DIODE SCHOTTKY 35V 10A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
товар відсутній
| MBR1045H |
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 10A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товар відсутній
| MBR1060H |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 10A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 10A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
товар відсутній
| MBR120LSFT1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
товар відсутній
| MBR130LSFT1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
товар відсутній
| MBR130T1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
товар відсутній
| MBR140SFT1H |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
| MBR1545CTH |
Виробник: onsemi
Description: DIODE ARR SCHOTT 45V 15A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 15A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товар відсутній
| MBR1645H |
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 16A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 16
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Description: DIODE SCHOTTKY 45V 16A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 16
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
товар відсутній
| MBR2045CTH |
Виробник: onsemi
Description: DIODE ARR SCHOTT 45V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товар відсутній
| MBR20L45CTH |
Виробник: onsemi
Description: DIODE SCHOTTKY
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: DIODE SCHOTTKY
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товар відсутній
| MBR2535CTH |
Виробник: onsemi
Description: DIODE ARR SCHOTT 35V 15A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Description: DIODE ARR SCHOTT 35V 15A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
товар відсутній
| MBR40250TH |
Виробник: onsemi
Description: DIODE SCHOTTKY 250V 40A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 40 A
Current - Reverse Leakage @ Vr: 250 µA @ 250 V
Description: DIODE SCHOTTKY 250V 40A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 40 A
Current - Reverse Leakage @ Vr: 250 µA @ 250 V
товар відсутній
| MBR41H100CTH |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 20A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 20A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
| MBRA210ET3H |
Виробник: onsemi
Description: DIODE SCHOTTKY 10V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 10 V
Description: DIODE SCHOTTKY 10V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 10 V
товар відсутній
| MBRA210LT3H |
Виробник: onsemi
Description: DIODE SCHOTTKY 10V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 µA @ 10 V
Description: DIODE SCHOTTKY 10V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 µA @ 10 V
товар відсутній
| MBRA340T3H |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 3A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
товар відсутній
| MBRB41H100CT-1H |
|
Виробник: onsemi
Description: DIODE SCHOTTKY
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: I2PAK (TO-262)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE SCHOTTKY
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: I2PAK (TO-262)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
| MBRD660CTT4H |
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
товар відсутній
| MBRD835LT4H |
Виробник: onsemi
Description: DIODE SCHOTTKY 35V 8A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V
Description: DIODE SCHOTTKY 35V 8A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V
товар відсутній
| MBRF20100CTH |
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V TO220 FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3 FULLPACK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Description: DIODE ARR SCHOTT 100V TO220 FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3 FULLPACK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
товар відсутній
| MBRM140T3H |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Bulk
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Bulk
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
| MBRS1100T3H |
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE SCHOTTKY 100V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товар відсутній
| MBRS130LT3H |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
товар відсутній
| MBRS130T3H |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
товар відсутній