| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NCP1239KD65R2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V Supplier Device Package: 7-SOIC Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12 V Control Features: EN, Soft Start Part Status: Active |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NCP13992AADR2G | onsemi |
Description: IC OFFLINE SW HALF-BRDG 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Duty Cycle: 50% Frequency - Switching: 20kHz ~ 750kHz Internal Switch(s): No Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 20V Supplier Device Package: 16-SOIC Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 9 V Control Features: EN, Frequency Control, Soft Start, Sync |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
NCP51530ADR2G | onsemi |
Description: IC HALF BRIDGE DRIVER 2A 8SOICFeatures: Bootstrap Circuit Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 10V ~ 17V Applications: General Purpose Current - Output / Channel: 2A Current - Peak Output: 2.2A Technology: Power MOSFET Voltage - Load: 700V Supplier Device Package: 8-SOIC Fault Protection: UVLO Load Type: Inductive, Capacitive Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NCP718AMTADJTBG | onsemi |
Description: IC REG LIN POS ADJ 300MA 6-WDFNPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 8 µA Voltage - Input (Max): 24V Number of Regulators: 1 Supplier Device Package: 6-WDFN (2x2) Voltage - Output (Max): 5V Voltage - Output (Min/Fixed): 1.2V Control Features: Soft Start Part Status: Active PSRR: 60dB (1kHz) Voltage Dropout (Max): 0.49V @ 300mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
NCS213RSQT2G | onsemi |
Description: IC CURRENT SENSE 1 CIRCUIT SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 125°C Current - Supply: 40µA Slew Rate: 1V/µs Current - Input Bias: 39 µA Voltage - Input Offset: 5 µV Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Number of Circuits: 1 -3db Bandwidth: 90 kHz Voltage - Supply Span (Min): 2.2 V Voltage - Supply Span (Max): 26 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NCS333ASQ3T2G | onsemi |
Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88APackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Zero-Drift Operating Temperature: -40°C ~ 125°C Current - Supply: 21µA Slew Rate: 0.15V/µs Gain Bandwidth Product: 350 kHz Current - Input Bias: 60 pA Voltage - Input Offset: 3.5 µV Supplier Device Package: SC-88A (SC-70-5/SOT-353) Part Status: Active Number of Circuits: 1 Current - Output / Channel: 11 mA -3db Bandwidth: 60 kHz Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 1530000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NL17SZ07EDFT2G | onsemi |
Description: IC BUFFER NON-INVERT 5.5V SC-88A Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 24mA Supplier Device Package: SC-88A (SC-70-5/SOT-353) Part Status: Obsolete |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
| NOA1213CUTAG | onsemi |
Description: SENSOR OPT 590NM AMBIENT 6CUDFNPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Wavelength: 590nm Output Type: Current Mounting Type: Surface Mount Type: Ambient Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Supplier Device Package: 6-CUDFN (1.6x1.6) Proximity Detection: No |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
NRVHP820MFDT3G | onsemi |
Description: DIODE ARRAY GP 200V 4A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NRVHP820MFDWFT1G | onsemi |
Description: DIODE ARRAY GP 200V 4A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NRVHP8H200MFDT1G | onsemi |
Description: DIODE ARRAY GP 200V 4A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NRVHP8H200MFDT3G | onsemi |
Description: DIODE ARRAY GP 200V 4A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NRVHP8H200MFDWFT1G | onsemi |
Description: DIODE ARRAY GP 200V 4A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NSR201MXT5G | onsemi |
Description: RF DIODE SCHOTTKY 2V 2X2DFNPackaging: Tape & Reel (TR) Package / Case: 2-XDFN Diode Type: Schottky - Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz Resistance @ If, F: 18Ohm @ 10mA, 1MHz Voltage - Peak Reverse (Max): 2V Supplier Device Package: 2-X2DFN (1x0.6) Part Status: Active Current - Max: 50 mA |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NSVF4015SG4T1G | onsemi |
Description: RF TRANS NPN 12V 10GHZ SC-82FLPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 17dB Power - Max: 450mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Supplier Device Package: SC-82FL/MCPH4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTHL065N65S3F | onsemi |
Description: MOSFET N-CH 650V 46A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V Power Dissipation (Max): 337W (Tc) Vgs(th) (Max) @ Id: 5V @ 4.6mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V |
на замовлення 5400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTHL110N65S3F | onsemi |
Description: MOSFET N-CH 650V 30A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 3mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V |
на замовлення 668 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTTFS6H850NTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFNInput Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 4V @ 70µA Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NVMFS5C426NLT1G | onsemi |
Description: MOSFET N-CH 40V 41A/237A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NVMFS5C638NLT1G | onsemi |
Description: MOSFET N-CH 60V 26A/133A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
|
NVMFS6H800NT1G | onsemi |
Description: MOSFET N-CH 80V 28A/203A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 330µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 228000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR0130CSSC00SPCA0-DPBR2 | onsemi |
Description: 1.2 MP 1/3 CISQualification: AEC-Q100 Frames per Second: 60 Grade: Automotive Supplier Device Package: 48-ILCC (10x10) Active Pixel Array: 1280H x 960V Pixel Size: 3.75µm x 3.75µm Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Operating Temperature: -30°C ~ 70°C Type: CMOS Package / Case: 48-LCC Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
AR0134CSSM00SPCA0-DPBR2 | onsemi |
Description: 1.2 MP 1/3 GS CISFrames per Second: 60.0 Part Status: Obsolete Supplier Device Package: 48-ILCC (10x10) Active Pixel Array: 1280H x 960V Pixel Size: 3.75µm x 3.75µm Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Operating Temperature: -30°C ~ 70°C Type: CMOS Package / Case: 48-LCC Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
AR0144CSSM00SUKA0-CPBR2 | onsemi |
Description: 1MP 1/4 CIS SOActive Pixel Array: 1280H x 800V Pixel Size: 3µm x 3µm Type: CMOS Package / Case: 69-WFBGA, CSPBGA Packaging: Tray Frames per Second: 60 Supplier Device Package: 69-ODCSP (5.55x5.57) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
AR0230CSSC00SUEA0-DPBR2 | onsemi |
Description: 2 MP 1/3 CISFrames per Second: 60.0 Supplier Device Package: 80-IBGA (10x10) Active Pixel Array: 1928H x 1088V Pixel Size: 3µm x 3µm Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Operating Temperature: -30°C ~ 85°C Type: CMOS Package / Case: 80-BGA Packaging: Tray |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
AR0238CSSC12SHRA0-DP2 | onsemi |
Description: 2MP 1/3 CIS SOFrames per Second: 60 Supplier Device Package: 48-PLCC (11.43x11.43) Active Pixel Array: 1928H x 1088V Pixel Size: 3µm x 3µm Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Operating Temperature: -30°C ~ 85°C (TJ) Type: CMOS Package / Case: 48-PLCC Packaging: Tray |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR1335CSSC11SMKA0-CP2 | onsemi |
Description: 13MP 1/3 CIS SOFrames per Second: 30.0 Supplier Device Package: 63-ODCSP (6.29x5.69) Active Pixel Array: 4208H x 3120V Pixel Size: 1.1µm x 1.1µm Type: CMOS Package / Case: 63-WFBGA, CSPBGA Packaging: Tray |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ASX340AT2C00XPED0-DPBR2 | onsemi |
Description: VGA 1/4 SOCFrames per Second: 60.0 Supplier Device Package: 63-IBGA (7.5x7.5) Active Pixel Array: 728H x 560V Voltage - Supply: 1.7V ~ 1.95V, 2.66V ~ 2.94V Operating Temperature: -40°C ~ 105°C Type: CMOS Package / Case: 63-LFBGA Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
MT9V024IA7XTM-DP2 | onsemi |
Description: VGA 1/3 GS CIS |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
| FDB9506L-F085 | onsemi |
Description: MOSFET N-CH 30V Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 24.5A (Ta), 110A (Tc) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AR0237ATSC12XUEA0-DPBR | onsemi |
Description: IMAGE SENSOR RGB 80-IBGAPackaging: Tray Package / Case: 80-LBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 3µm x 3µm Active Pixel Array: 1928H x 1088V Supplier Device Package: 80-IBGA (10x10) Grade: Automotive Part Status: Active Frames per Second: 60.0 Qualification: AEC-Q100 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
| AR0237ATSC12XUEA0-DRBR | onsemi |
Description: IMAGE SENSOR RGB 80-IBGAPackaging: Tray Package / Case: 80-LBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 3µm x 3µm Active Pixel Array: 1928H x 1088V Supplier Device Package: 80-IBGA (10x10) Grade: Automotive Part Status: Active Frames per Second: 60.0 Qualification: AEC-Q100 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
FDG6304P-F169 | onsemi |
Description: INTEGRATED CIRCUIT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FDG6304P-X | onsemi | Description: INTEGRATED CIRCUIT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
FGD3N60LSDTM-T | onsemi |
Description: IGBT 600V 6A TO-252AAPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 234 ns Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A Supplier Device Package: TO-252AA Td (on/off) @ 25°C: 40ns/600ns Switching Energy: 250µJ (on), 1mJ (off) Test Condition: 480V, 3A, 470Ohm, 10V Gate Charge: 12.5 nC Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 25 A Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MT9D112D00STCK15AC1-200 | onsemi |
Description: INTEGRATED CIRCUIT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MT9D113D00STCK25AC1-200 | onsemi |
Description: INTEGRATED CIRCUIT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MT9D115D00STCK25AC1-200 | onsemi |
Description: INTEGRATED CIRCUITPackaging: Bulk Package / Case: Die Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 1.75µm x 1.75µm Active Pixel Array: 1600H x 1200V Supplier Device Package: Die Part Status: Obsolete Frames per Second: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MT9M113D00STCK24AC1-200 | onsemi |
Description: INTEGRATED CIRCUIT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MT9P017D00STCC48AC1-200 | onsemi |
Description: INTEGRATED CIRCUIT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MT9P111D00STCK28AC1-200 | onsemi |
Description: INTEGRATED CIRCUITPackaging: Bulk Package / Case: Die Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 1.4µm x 1.4µm Active Pixel Array: 2592H x 1944V Supplier Device Package: Die Part Status: Obsolete Frames per Second: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MT9T111D00STCK26AC1-200 | onsemi |
Description: INTEGRATED CIRCUIT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
|
NIS5132MN1TXG-L701 | onsemi |
Description: IC ELECTRONIC FUSE 10DFNPackaging: Bulk Package / Case: 10-VFDFN Exposed Pad Sensing Method: High-Side Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 9V ~ 18V Current - Output: 3.6A Operating Temperature: -40°C ~ 150°C Supplier Device Package: 10-DFN (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ESD5111PFCT5G | onsemi |
Description: TVS DIODE 3.3VWM 6.5VC 2WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
FAN53526UC89X | onsemi |
Description: IC REG BUCK PROG 3A 15WLCSPPackaging: Cut Tape (CT) Package / Case: 15-UFBGA, WLCSP Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.4MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 15-WLCSP (2.02x1.31) Synchronous Rectifier: Yes Voltage - Output (Max): 1.15V Voltage - Input (Min): 2.5V Voltage - Output (Min/Fixed): 1.15V Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NCP339BFCT2G | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSPFeatures: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 18mOhm Input Type: Non-Inverting Voltage - Load: 1.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: 6-WLCSP (1.0x1.5) Fault Protection: Reverse Current |
на замовлення 6664 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
15GN03CA-TB-E | onsemi |
Description: RF TRANS NPN 10V 1.5GHZ 3CPPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13dB @ 0.4GHz Power - Max: 200mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 1.5GHz Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz Supplier Device Package: 3-CP Part Status: Active |
на замовлення 2680 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
15GN03MA-TL-E | onsemi |
Description: RF TRANS NPN 10V 1.5GHZ 3-MCPPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13dB @ 0.4GHz Power - Max: 400mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 1.5GHz Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz Supplier Device Package: 3-MCP Part Status: Active |
на замовлення 25306 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1N4006FFG | onsemi |
Description: DIODE STANDARD 800V 1A AXIALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 1705 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1N4007FFG | onsemi |
Description: DIODE STANDARD 1000V 1A AXIALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 2730 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1N5384BRLG | onsemi |
Description: DIODE ZENER 160V 5W AXIALTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 350 Ohms Supplier Device Package: Axial Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 122 V |
на замовлення 1496 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1PMT5935BT1G | onsemi |
Description: DIODE ZENER 27V 3.2W POWERMITETolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 23 Ohms Supplier Device Package: Powermite Power - Max: 3.2 W Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1SV263-TL-E | onsemi |
Description: RF DIODE PIN 50V 100MW 3MCPPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Diode Type: PIN - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: 3-MCP Current - Max: 50 mA Power Dissipation (Max): 100 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
1SV264-TL-E | onsemi |
Description: RF DIODE PIN 50V 100MW 3MCPPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: 3-MCP Current - Max: 50 mA Power Dissipation (Max): 100 mW |
на замовлення 4067 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1SV267-TB-E | onsemi |
Description: RF DIODE PIN 50V 150MW 3CPPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: 3-CP Part Status: Obsolete Current - Max: 50 mA Power Dissipation (Max): 150 mW |
на замовлення 5721 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
2SA1593T-TL-E | onsemi |
Description: TRANS PNP 100V 2A TP-FAPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: TP-FA Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
2SA2012-TD-E | onsemi |
Description: TRANS PNP 30V 5A PCPPower - Max: 3.5 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: PCP Frequency - Transition: 420MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 210mV @ 30mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
2SB1121S-TD-E | onsemi |
Description: TRANS PNP 25V 2A PCPPower - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: PCP Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 830 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
2SB1205S-TL-E | onsemi |
Description: TRANS PNP 20V 5A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V Frequency - Transition: 320MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
на замовлення 649 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
2SB1302T-TD-E | onsemi |
Description: TRANS PNP 20V 5A PCPPackaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 320MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.3 W |
товару немає в наявності |
В кошику од. на суму грн. |
| NCP1239KD65R2G |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: EN, Soft Start
Part Status: Active
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: EN, Soft Start
Part Status: Active
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 27.97 грн |
| 5000+ | 26.26 грн |
| NCP13992AADR2G |
![]() |
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 20V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: EN, Frequency Control, Soft Start, Sync
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 20V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: EN, Frequency Control, Soft Start, Sync
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NCP51530ADR2G |
![]() |
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 2A 8SOIC
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 17V
Applications: General Purpose
Current - Output / Channel: 2A
Current - Peak Output: 2.2A
Technology: Power MOSFET
Voltage - Load: 700V
Supplier Device Package: 8-SOIC
Fault Protection: UVLO
Load Type: Inductive, Capacitive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 2A 8SOIC
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 17V
Applications: General Purpose
Current - Output / Channel: 2A
Current - Peak Output: 2.2A
Technology: Power MOSFET
Voltage - Load: 700V
Supplier Device Package: 8-SOIC
Fault Protection: UVLO
Load Type: Inductive, Capacitive
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 41.98 грн |
| 5000+ | 39.48 грн |
| NCP718AMTADJTBG |
![]() |
Виробник: onsemi
Description: IC REG LIN POS ADJ 300MA 6-WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Soft Start
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.49V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LIN POS ADJ 300MA 6-WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Soft Start
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.49V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCS213RSQT2G |
![]() |
Виробник: onsemi
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 5 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 90 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 5 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 90 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.70 грн |
| 6000+ | 19.43 грн |
| 9000+ | 19.18 грн |
| NCS333ASQ3T2G |
![]() |
Виробник: onsemi
Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 21µA
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 3.5 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 11 mA
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 21µA
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 3.5 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 11 mA
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 1530000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 17.13 грн |
| 6000+ | 16.06 грн |
| NL17SZ07EDFT2G |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC-88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Obsolete
Description: IC BUFFER NON-INVERT 5.5V SC-88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NOA1213CUTAG |
![]() |
Виробник: onsemi
Description: SENSOR OPT 590NM AMBIENT 6CUDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Wavelength: 590nm
Output Type: Current
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 6-CUDFN (1.6x1.6)
Proximity Detection: No
Description: SENSOR OPT 590NM AMBIENT 6CUDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Wavelength: 590nm
Output Type: Current
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 6-CUDFN (1.6x1.6)
Proximity Detection: No
товару немає в наявності
В кошику
од. на суму грн.
| NRVHP820MFDT3G |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NRVHP820MFDWFT1G |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NRVHP8H200MFDT1G |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NRVHP8H200MFDT3G |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NRVHP8H200MFDWFT1G |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 43.79 грн |
| 3000+ | 39.13 грн |
| NSR201MXT5G |
![]() |
Виробник: onsemi
Description: RF DIODE SCHOTTKY 2V 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Resistance @ If, F: 18Ohm @ 10mA, 1MHz
Voltage - Peak Reverse (Max): 2V
Supplier Device Package: 2-X2DFN (1x0.6)
Part Status: Active
Current - Max: 50 mA
Description: RF DIODE SCHOTTKY 2V 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Resistance @ If, F: 18Ohm @ 10mA, 1MHz
Voltage - Peak Reverse (Max): 2V
Supplier Device Package: 2-X2DFN (1x0.6)
Part Status: Active
Current - Max: 50 mA
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 9.65 грн |
| 16000+ | 8.59 грн |
| NSVF4015SG4T1G |
![]() |
Виробник: onsemi
Description: RF TRANS NPN 12V 10GHZ SC-82FL
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 17dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SC-82FL/MCPH4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: RF TRANS NPN 12V 10GHZ SC-82FL
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 17dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SC-82FL/MCPH4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.26 грн |
| NTHL065N65S3F |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.6mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.6mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 852.05 грн |
| 30+ | 494.85 грн |
| 120+ | 423.55 грн |
| 510+ | 380.02 грн |
| NTHL110N65S3F |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V
Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V
на замовлення 668 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 589.94 грн |
| 30+ | 333.13 грн |
| 120+ | 281.53 грн |
| 510+ | 237.19 грн |
| NTTFS6H850NTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 30.91 грн |
| NVMFS5C426NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 41A/237A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 41A/237A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 130.71 грн |
| NVMFS5C638NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 26A/133A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 26A/133A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NVMFS6H800NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Qualification: AEC-Q101
на замовлення 228000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 153.85 грн |
| AR0130CSSC00SPCA0-DPBR2 |
![]() |
Виробник: onsemi
Description: 1.2 MP 1/3 CIS
Qualification: AEC-Q100
Frames per Second: 60
Grade: Automotive
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 1280H x 960V
Pixel Size: 3.75µm x 3.75µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
Description: 1.2 MP 1/3 CIS
Qualification: AEC-Q100
Frames per Second: 60
Grade: Automotive
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 1280H x 960V
Pixel Size: 3.75µm x 3.75µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| AR0134CSSM00SPCA0-DPBR2 |
![]() |
Виробник: onsemi
Description: 1.2 MP 1/3 GS CIS
Frames per Second: 60.0
Part Status: Obsolete
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 1280H x 960V
Pixel Size: 3.75µm x 3.75µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
Description: 1.2 MP 1/3 GS CIS
Frames per Second: 60.0
Part Status: Obsolete
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 1280H x 960V
Pixel Size: 3.75µm x 3.75µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| AR0144CSSM00SUKA0-CPBR2 |
![]() |
Виробник: onsemi
Description: 1MP 1/4 CIS SO
Active Pixel Array: 1280H x 800V
Pixel Size: 3µm x 3µm
Type: CMOS
Package / Case: 69-WFBGA, CSPBGA
Packaging: Tray
Frames per Second: 60
Supplier Device Package: 69-ODCSP (5.55x5.57)
Description: 1MP 1/4 CIS SO
Active Pixel Array: 1280H x 800V
Pixel Size: 3µm x 3µm
Type: CMOS
Package / Case: 69-WFBGA, CSPBGA
Packaging: Tray
Frames per Second: 60
Supplier Device Package: 69-ODCSP (5.55x5.57)
товару немає в наявності
В кошику
од. на суму грн.
| AR0230CSSC00SUEA0-DPBR2 |
![]() |
Виробник: onsemi
Description: 2 MP 1/3 CIS
Frames per Second: 60.0
Supplier Device Package: 80-IBGA (10x10)
Active Pixel Array: 1928H x 1088V
Pixel Size: 3µm x 3µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 80-BGA
Packaging: Tray
Description: 2 MP 1/3 CIS
Frames per Second: 60.0
Supplier Device Package: 80-IBGA (10x10)
Active Pixel Array: 1928H x 1088V
Pixel Size: 3µm x 3µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 80-BGA
Packaging: Tray
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 2290.16 грн |
| 10+ | 2049.36 грн |
| AR0238CSSC12SHRA0-DP2 |
![]() |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Frames per Second: 60
Supplier Device Package: 48-PLCC (11.43x11.43)
Active Pixel Array: 1928H x 1088V
Pixel Size: 3µm x 3µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 85°C (TJ)
Type: CMOS
Package / Case: 48-PLCC
Packaging: Tray
Description: 2MP 1/3 CIS SO
Frames per Second: 60
Supplier Device Package: 48-PLCC (11.43x11.43)
Active Pixel Array: 1928H x 1088V
Pixel Size: 3µm x 3µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 85°C (TJ)
Type: CMOS
Package / Case: 48-PLCC
Packaging: Tray
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 1967.90 грн |
| 10+ | 1579.18 грн |
| AR1335CSSC11SMKA0-CP2 |
![]() |
Виробник: onsemi
Description: 13MP 1/3 CIS SO
Frames per Second: 30.0
Supplier Device Package: 63-ODCSP (6.29x5.69)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Type: CMOS
Package / Case: 63-WFBGA, CSPBGA
Packaging: Tray
Description: 13MP 1/3 CIS SO
Frames per Second: 30.0
Supplier Device Package: 63-ODCSP (6.29x5.69)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Type: CMOS
Package / Case: 63-WFBGA, CSPBGA
Packaging: Tray
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 1300.14 грн |
| ASX340AT2C00XPED0-DPBR2 |
![]() |
Виробник: onsemi
Description: VGA 1/4 SOC
Frames per Second: 60.0
Supplier Device Package: 63-IBGA (7.5x7.5)
Active Pixel Array: 728H x 560V
Voltage - Supply: 1.7V ~ 1.95V, 2.66V ~ 2.94V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Package / Case: 63-LFBGA
Packaging: Tray
Description: VGA 1/4 SOC
Frames per Second: 60.0
Supplier Device Package: 63-IBGA (7.5x7.5)
Active Pixel Array: 728H x 560V
Voltage - Supply: 1.7V ~ 1.95V, 2.66V ~ 2.94V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Package / Case: 63-LFBGA
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| MT9V024IA7XTM-DP2 |
![]() |
Виробник: onsemi
Description: VGA 1/3 GS CIS
Description: VGA 1/3 GS CIS
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| FDB9506L-F085 |
Виробник: onsemi
Description: MOSFET N-CH 30V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 24.5A (Ta), 110A (Tc)
Part Status: Obsolete
Description: MOSFET N-CH 30V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 24.5A (Ta), 110A (Tc)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| AR0237ATSC12XUEA0-DPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Grade: Automotive
Part Status: Active
Frames per Second: 60.0
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Grade: Automotive
Part Status: Active
Frames per Second: 60.0
Qualification: AEC-Q100
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1480.64 грн |
| 5+ | 1273.32 грн |
| 10+ | 1218.82 грн |
| 25+ | 1084.31 грн |
| 40+ | 1056.96 грн |
| 80+ | 1020.18 грн |
| 440+ | 929.55 грн |
| AR0237ATSC12XUEA0-DRBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Grade: Automotive
Part Status: Active
Frames per Second: 60.0
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Grade: Automotive
Part Status: Active
Frames per Second: 60.0
Qualification: AEC-Q100
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1437.34 грн |
| 5+ | 1235.65 грн |
| 10+ | 1182.56 грн |
| 25+ | 1051.81 грн |
| 40+ | 1025.17 грн |
| 80+ | 989.33 грн |
| 440+ | 901.12 грн |
| FDG6304P-F169 |
![]() |
Виробник: onsemi
Description: INTEGRATED CIRCUIT
Description: INTEGRATED CIRCUIT
товару немає в наявності
В кошику
од. на суму грн.
| FDG6304P-X |
Виробник: onsemi
Description: INTEGRATED CIRCUIT
Description: INTEGRATED CIRCUIT
товару немає в наявності
В кошику
од. на суму грн.
| FGD3N60LSDTM-T |
![]() |
Виробник: onsemi
Description: IGBT 600V 6A TO-252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 234 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 40ns/600ns
Switching Energy: 250µJ (on), 1mJ (off)
Test Condition: 480V, 3A, 470Ohm, 10V
Gate Charge: 12.5 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 40 W
Description: IGBT 600V 6A TO-252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 234 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 40ns/600ns
Switching Energy: 250µJ (on), 1mJ (off)
Test Condition: 480V, 3A, 470Ohm, 10V
Gate Charge: 12.5 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 40 W
товару немає в наявності
В кошику
од. на суму грн.
| MT9D115D00STCK25AC1-200 |
![]() |
Виробник: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.75µm x 1.75µm
Active Pixel Array: 1600H x 1200V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.75µm x 1.75µm
Active Pixel Array: 1600H x 1200V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
товару немає в наявності
В кошику
од. на суму грн.
| MT9P111D00STCK28AC1-200 |
![]() |
Виробник: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
товару немає в наявності
В кошику
од. на суму грн.
| NIS5132MN1TXG-L701 |
![]() |
Виробник: onsemi
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Bulk
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Bulk
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
товару немає в наявності
В кошику
од. на суму грн.
| ESD5111PFCT5G |
![]() |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 6.5VC 2WLCSP
Description: TVS DIODE 3.3VWM 6.5VC 2WLCSP
товару немає в наявності
В кошику
од. на суму грн.
| FAN53526UC89X |
![]() |
Виробник: onsemi
Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Cut Tape (CT)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.15V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.15V
Part Status: Active
Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Cut Tape (CT)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.15V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.15V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.71 грн |
| 10+ | 73.86 грн |
| 25+ | 61.89 грн |
| 100+ | 45.43 грн |
| 250+ | 39.22 грн |
| 500+ | 35.39 грн |
| 1000+ | 31.66 грн |
| NCP339BFCT2G |
![]() |
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.0x1.5)
Fault Protection: Reverse Current
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.0x1.5)
Fault Protection: Reverse Current
на замовлення 6664 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.57 грн |
| 13+ | 24.20 грн |
| 25+ | 21.62 грн |
| 100+ | 17.65 грн |
| 250+ | 16.39 грн |
| 500+ | 15.63 грн |
| 1000+ | 14.76 грн |
| 15GN03CA-TB-E |
![]() |
Виробник: onsemi
Description: RF TRANS NPN 10V 1.5GHZ 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-CP
Part Status: Active
Description: RF TRANS NPN 10V 1.5GHZ 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-CP
Part Status: Active
на замовлення 2680 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.15 грн |
| 14+ | 21.74 грн |
| 100+ | 13.56 грн |
| 500+ | 8.70 грн |
| 1000+ | 6.70 грн |
| 15GN03MA-TL-E |
![]() |
Виробник: onsemi
Description: RF TRANS NPN 10V 1.5GHZ 3-MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 400mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-MCP
Part Status: Active
Description: RF TRANS NPN 10V 1.5GHZ 3-MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 400mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-MCP
Part Status: Active
на замовлення 25306 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.57 грн |
| 15+ | 20.70 грн |
| 100+ | 13.18 грн |
| 500+ | 9.30 грн |
| 1000+ | 8.31 грн |
| 1N4006FFG |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 1705 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.47 грн |
| 16+ | 19.51 грн |
| 100+ | 12.36 грн |
| 500+ | 8.71 грн |
| 1000+ | 7.77 грн |
| 1N4007FFG |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 1000V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 2730 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.69 грн |
| 35+ | 8.64 грн |
| 100+ | 5.33 грн |
| 500+ | 3.65 грн |
| 1000+ | 3.21 грн |
| 1N5384BRLG |
![]() |
Виробник: onsemi
Description: DIODE ZENER 160V 5W AXIAL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Description: DIODE ZENER 160V 5W AXIAL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
на замовлення 1496 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.82 грн |
| 1PMT5935BT1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 27V 3.2W POWERMITE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: Powermite
Power - Max: 3.2 W
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V
Description: DIODE ZENER 27V 3.2W POWERMITE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: Powermite
Power - Max: 3.2 W
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.66 грн |
| 10+ | 33.06 грн |
| 100+ | 25.22 грн |
| 500+ | 19.78 грн |
| 1000+ | 18.30 грн |
| 1SV263-TL-E |
![]() |
Виробник: onsemi
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
товару немає в наявності
В кошику
од. на суму грн.
| 1SV264-TL-E |
![]() |
Виробник: onsemi
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
на замовлення 4067 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.06 грн |
| 17+ | 18.17 грн |
| 100+ | 16.48 грн |
| 500+ | 11.69 грн |
| 1000+ | 10.36 грн |
| 1SV267-TB-E |
![]() |
Виробник: onsemi
Description: RF DIODE PIN 50V 150MW 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 150 mW
Description: RF DIODE PIN 50V 150MW 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 150 mW
на замовлення 5721 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.30 грн |
| 12+ | 25.76 грн |
| 100+ | 16.48 грн |
| 500+ | 11.69 грн |
| 1000+ | 10.47 грн |
| 2SA1593T-TL-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 100V 2A TP-FA
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TP-FA
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: TRANS PNP 100V 2A TP-FA
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TP-FA
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.35 грн |
| 10+ | 44.37 грн |
| 2SA2012-TD-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 30V 5A PCP
Power - Max: 3.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: PCP
Frequency - Transition: 420MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 30mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS PNP 30V 5A PCP
Power - Max: 3.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: PCP
Frequency - Transition: 420MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 30mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SB1121S-TD-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 25V 2A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS PNP 25V 2A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 830 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.62 грн |
| 10+ | 37.30 грн |
| 100+ | 25.92 грн |
| 500+ | 18.99 грн |
| 2SB1205S-TL-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 20V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Description: TRANS PNP 20V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
на замовлення 649 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.24 грн |
| 10+ | 55.47 грн |
| 100+ | 36.62 грн |
| 2SB1302T-TD-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
Description: TRANS PNP 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
товару немає в наявності
В кошику
од. на суму грн.

































.jpg)

