| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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NSVMUN5316DW1T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 13390 шт: термін постачання 21-31 дні (днів) |
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NSVPZTA92T1G | onsemi |
Description: TRANS PNP 300V 0.5A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1.5 W |
на замовлення 528 шт: термін постачання 21-31 дні (днів) |
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NSVR0230M2T5G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOD723Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOD-723 Current - Average Rectified (Io): 200mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOD-723 Packaging: Cut Tape (CT) |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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NSVR0230P2T5G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOD923Current - Average Rectified (Io): 200mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOD-923 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 30 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOD-923 |
на замовлення 6717 шт: термін постачання 21-31 дні (днів) |
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NSVR0240HT1G | onsemi |
Description: DIODE SCHOTTKY 40V 250MA SOD323Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 4pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 11577 шт: термін постачання 21-31 дні (днів) |
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NSVR0240P2T5G | onsemi |
Description: DIODE SCHOTTKY 40V 200MA SOD923Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-923 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 7pF @ 1V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOD-923 Packaging: Cut Tape (CT) |
на замовлення 21663 шт: термін постачання 21-31 дні (днів) |
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NSVR0520V2T1G | onsemi |
Description: DIODE SCHOTTKY 20V 500MA SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: Schottky Capacitance @ Vr, F: 35pF @ 1V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA Current - Reverse Leakage @ Vr: 75 µA @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSVUMC5NT2G | onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SC88AQualification: AEC-Q101 Grade: Automotive Supplier Device Package: SC-88A (SC-70-5/SOT-353) Resistor - Emitter Base (R2): 47kOhms, 10kOhms Resistor - Base (R1): 47kOhms, 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTJD4152PT2G | onsemi |
Description: MOSFET 2P-CH 20V 0.88A SC88Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V Current - Continuous Drain (Id) @ 25°C: 880mA Drain to Source Voltage (Vdss): 20V Power - Max: 272mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V |
на замовлення 22228 шт: термін постачання 21-31 дні (днів) |
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NTK3139PT5G | onsemi |
Description: MOSFET P-CH 20V 660MA SOT723Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±6V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SOT-723 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
на замовлення 15287 шт: термін постачання 21-31 дні (днів) |
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NTLUS3A18PZTBG | onsemi |
Description: MOSFET P-CH 20V 5.1A 6UDFNInput Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 6-UDFN (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTLUS3A40PZTBG | onsemi |
Description: MOSFET P-CH 20V 4A 6UDFNDrain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 6-UDFN (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS4837NHT1G | onsemi |
Description: MOSFET N-CH 30V 10.2A/75A 5DFNPower Dissipation (Max): 880mW (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3016 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.5V @ 250µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS4C025NT1G | onsemi |
Description: MOSFET N-CH 30V 20A/69A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc) Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
на замовлення 57 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C029NT1G | onsemi |
Description: MOSFET N-CH 30V 15A/46A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V |
на замовлення 18550 шт: термін постачання 21-31 дні (днів) |
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NTMS4937NR2G | onsemi |
Description: MOSFET N-CH 30V 8.6A 8SOICRds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2563 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 810mW (Ta) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTR3C21NZT1G | onsemi |
Description: MOSFET N-CH 20V 3.6A SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 755 шт: термін постачання 21-31 дні (днів) |
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NTS10120MFST1G | onsemi |
Description: DIODE SCHOTTKY 120V 10A 5DFNCurrent - Reverse Leakage @ Vr: 30 µA @ 120 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 120 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTS260ESFT1G | onsemi |
Description: DIODE SCHOTTKY 60V 2A SOD123FLQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 12 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: SOD-123FL Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTTFS4C06NTAG | onsemi |
Description: MOSFET N-CH 30V 11A/67A 8WDFNInput Capacitance (Ciss) (Max) @ Vds: 3366 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 810mW (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 67A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 2310 шт: термін постачання 21-31 дні (днів) |
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NTTFS5116PLTWG | onsemi |
Description: MOSFET P-CH 60V 5.7A 8WDFNPower Dissipation (Max): 3.2W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 250µA |
на замовлення 4950 шт: термін постачання 21-31 дні (днів) |
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NUF4310MNTAG | onsemi |
Description: FILTER RC(PI) 100 OHMS ESD SMDNumber of Channels: 4 Part Status: Active ESD Protection: Yes Resistance - Channel (Ohms): 100 Center / Cutoff Frequency: 185MHz (Cutoff) Technology: RC (Pi) Applications: Data Lines for Mobile Devices Filter Order: 2nd Attenuation Value: -25dB @ 800MHz ~ 4GHz Height: 0.031" (0.79mm) Values: R = 100Ohms, C = 9pF Operating Temperature: -40°C ~ 85°C Type: Low Pass Mounting Type: Surface Mount Size / Dimension: 0.063" L x 0.039" W (1.60mm x 1.00mm) Package / Case: 8-WFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 8354 шт: термін постачання 21-31 дні (днів) |
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NUP4106DR2G | onsemi |
Description: TVS DIODE 3.3VWM 15VC 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 8pF @ 1MHz Current - Peak Pulse (10/1000µs): 25A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: 8-SOIC Unidirectional Channels: 4 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 500W Power Line Protection: Yes |
на замовлення 5333 шт: термін постачання 21-31 дні (днів) |
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NVD6416ANLT4G-VF01 | onsemi |
Description: MOSFET N-CH 100V 19A DPAK-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DPAK-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7659 шт: термін постачання 21-31 дні (днів) |
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NVD6495NLT4G-VF01 | onsemi |
Description: MOSFET N-CH 100V 25A DPAKMounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
на замовлення 1858 шт: термін постачання 21-31 дні (днів) |
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NVMD6N04R2G | onsemi |
Description: MOSFET 2N-CH 40V 4.6A 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C450NLWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 110A 5DFNQualification: AEC-Q101 Grade: Automotive FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) |
на замовлення 1850 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C460NLAFT1G | onsemi |
Description: MOSFET N-CH 40V 21A/78A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 856 шт: термін постачання 21-31 дні (днів) |
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NVR5124PLT1G | onsemi |
Description: MOSFET P-CH 60V 1.1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 3A, 10V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 31085 шт: термін постачання 21-31 дні (днів) |
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NVTFS4C06NWFTAG | onsemi |
Description: MOSFET N-CH 30V 21A 8WDFNInput Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVTFS5C673NLTAG | onsemi |
Description: MOSFET N-CH 60V 13A/50A 8WDFNQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 463 шт: термін постачання 21-31 дні (днів) |
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NVTFS5C680NLTAG | onsemi |
Description: MOSFET N-CH 60V 7.82A/20A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.82A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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NVTR0202PLT1G | onsemi |
Description: MOSFET P-CH 20V 400MA SOT23Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.3V @ 250µA Qualification: AEC-Q101 Grade: Automotive |
на замовлення 17777 шт: термін постачання 21-31 дні (днів) |
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NZ9F18VST5G | onsemi |
Description: DIODE ZENER 18V 250MW SOD923Current - Reverse Leakage @ Vr: 100 nA @ 14 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Supplier Device Package: SOD-923 Impedance (Max) (Zzt): 50 Ohms Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-923 Tolerance: ±2% Packaging: Cut Tape (CT) |
на замовлення 342 шт: термін постачання 21-31 дні (днів) |
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NZ9F18VT5G | onsemi |
Description: DIODE ZENER 18V 250MW SOD923Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-923 Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 14 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Supplier Device Package: SOD-923 Impedance (Max) (Zzt): 50 Ohms |
на замовлення 7935 шт: термін постачання 21-31 дні (днів) |
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NZ9F5V6ST5G | onsemi |
Description: DIODE ZENER 5.6V 250MW SOD923Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Part Status: Active Supplier Device Package: SOD-923 Impedance (Max) (Zzt): 60 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-923 Tolerance: ±2% Packaging: Cut Tape (CT) |
на замовлення 6963 шт: термін постачання 21-31 дні (днів) |
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PCA9306FMUTAG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8UDFNNumber of Circuits: 1 Part Status: Active Voltage - VCCB: 1.8 V ~ 5.5 V Voltage - VCCA: 1 V ~ 3.6 V Channels per Circuit: 2 Translator Type: Voltage Level Channel Type: Bidirectional Supplier Device Package: 8-UDFN (1.45x1) Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Output Type: Open Drain Package / Case: 8-UFDFN Features: Auto-Direction Sensing Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PCA9535ECDTR2G | onsemi |
Description: IC XPND 100KHZ I2C SMBUS 24TSSOPDigiKey Programmable: Not Verified Part Status: Active Current - Output Source/Sink: 25mA Supplier Device Package: 24-TSSOP Interrupt Output: Yes Clock Frequency: 100 kHz Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Number of I/O: 16 Interface: I2C, SMBus Mounting Type: Surface Mount Output Type: Open Drain Package / Case: 24-TSSOP (0.173", 4.40mm Width) Features: POR Packaging: Cut Tape (CT) |
на замовлення 1211 шт: термін постачання 21-31 дні (днів) |
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PCA9535ECDWR2G | onsemi |
Description: IC XPNDR 100KHZ I2C SMBUS 24SOICPart Status: Obsolete Current - Output Source/Sink: 25mA Supplier Device Package: 24-SOIC Interrupt Output: Yes DigiKey Programmable: Not Verified Clock Frequency: 100 kHz Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Number of I/O: 16 Interface: I2C, SMBus Mounting Type: Surface Mount Output Type: Open Drain Package / Case: 24-SOIC (0.295", 7.50mm Width) Features: POR Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S1Z1SMB5919BT3G | onsemi |
Description: DIODE ZENER 5.6V 3W SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Supplier Device Package: SMB Part Status: Active Tolerance: ±5% Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 2 Ohms Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1174 шт: термін постачання 21-31 дні (днів) |
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S2SA1774G | onsemi |
Description: TRANS PNP 50V 0.1A SC75 SOT416Frequency - Transition: 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-75, SOT-416 |
на замовлення 5105 шт: термін постачання 21-31 дні (днів) |
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SBAS16LT3G | onsemi |
Description: DIODE STANDARD 100V 200MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16930 шт: термін постачання 21-31 дні (днів) |
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SBAT54CWT1G | onsemi |
Description: DIODE ARR SCHOTT 30V 200MA SC703Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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SBAV199LT3G | onsemi |
Description: DIODE ARRAY GP 70V 215MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 70 V Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SBAV70LT3G | onsemi |
Description: DIODE ARR GP 100V 200MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 µA @ 70 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBAW56LT3G | onsemi |
Description: DIODE ARRAY GP 70V 200MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 70000 шт: термін постачання 21-31 дні (днів) |
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SBC817-25LT3G | onsemi |
Description: TRANS NPN 45V 0.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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SBC847BDW1T3G | onsemi |
Description: TRANS 2NPN 45V 100MA SC88/SC70Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBC847CWT1G | onsemi |
Description: TRANS NPN 45V 0.1A SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 150 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12003 шт: термін постачання 21-31 дні (днів) |
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SBC848BLT1G | onsemi |
Description: TRANS NPN 30V 0.1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8161 шт: термін постачання 21-31 дні (днів) |
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SBC856BDW1T3G | onsemi |
Description: TRANS 2PNP 65V 100MA SC88/SC70Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 599 шт: термін постачання 21-31 дні (днів) |
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SBC857ALT1G | onsemi |
Description: TRANS PNP 45V 0.1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SBCP53-10T1G | onsemi |
Description: TRANS PNP 80V 1.5A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBCP53T1G | onsemi |
Description: TRANS PNP 80V 1.5A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBCP56T1G | onsemi |
Description: TRANS NPN 80V 1A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBCP56T3G | onsemi |
Description: TRANS NPN 80V 1A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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SBRS8190T3G | onsemi |
Description: DIODE SCHOTTKY 90V 1A SMB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBSP52T1G | onsemi |
Description: TRANS NPN DARL 80V 1A SOT223Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-223 (TO-261) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 6427 шт: термін постачання 21-31 дні (днів) |
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SCM1293A-04SO | onsemi |
Description: TVS DIODE 9.9VC SC74Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C Applications: DVI, HDMI Capacitance @ Frequency: 2pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Supplier Device Package: SC-74 Unidirectional Channels: 4 Voltage - Clamping (Max) @ Ipp: 9.9V (Typ) Power Line Protection: Yes Part Status: Active |
на замовлення 112347 шт: термін постачання 21-31 дні (днів) |
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SDTA114YET1G | onsemi |
Description: TRANS PREBIAS PNP 50V 0.1A SC75Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| NSVMUN5316DW1T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.37 грн |
| 27+ | 11.27 грн |
| 100+ | 7.01 грн |
| 500+ | 4.84 грн |
| 1000+ | 4.27 грн |
| NSVPZTA92T1G |
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Виробник: onsemi
Description: TRANS PNP 300V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
Description: TRANS PNP 300V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
на замовлення 528 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.85 грн |
| 12+ | 25.07 грн |
| 100+ | 16.01 грн |
| 500+ | 11.33 грн |
| NSVR0230M2T5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD723
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-723
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-723
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 200MA SOD723
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-723
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-723
Packaging: Cut Tape (CT)
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.22 грн |
| 17+ | 17.91 грн |
| 100+ | 11.33 грн |
| 500+ | 7.95 грн |
| 1000+ | 7.08 грн |
| 2000+ | 6.35 грн |
| NSVR0230P2T5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD923
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-923
Description: DIODE SCHOTTKY 30V 200MA SOD923
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-923
на замовлення 6717 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.77 грн |
| 13+ | 24.03 грн |
| 100+ | 14.42 грн |
| 500+ | 12.53 грн |
| 1000+ | 8.52 грн |
| 2000+ | 7.84 грн |
| NSVR0240HT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 250MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 11577 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.05 грн |
| 31+ | 9.85 грн |
| 100+ | 6.10 грн |
| 500+ | 4.20 грн |
| 1000+ | 3.71 грн |
| NSVR0240P2T5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 200MA SOD923
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-923
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 200MA SOD923
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-923
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Cut Tape (CT)
на замовлення 21663 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.40 грн |
| 44+ | 6.87 грн |
| 100+ | 4.26 грн |
| 500+ | 2.91 грн |
| 1000+ | 2.55 грн |
| NSVR0520V2T1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 20V 500MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 20V 500MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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| NSVUMC5NT2G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SC88A
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Resistor - Base (R1): 47kOhms, 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN/PNP 50V SC88A
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Resistor - Base (R1): 47kOhms, 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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| NTJD4152PT2G |
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Виробник: onsemi
Description: MOSFET 2P-CH 20V 0.88A SC88
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 272mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Description: MOSFET 2P-CH 20V 0.88A SC88
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 272mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
на замовлення 22228 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.52 грн |
| 13+ | 23.28 грн |
| 100+ | 14.83 грн |
| 500+ | 10.47 грн |
| 1000+ | 9.36 грн |
| NTK3139PT5G |
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Виробник: onsemi
Description: MOSFET P-CH 20V 660MA SOT723
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-723
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 660MA SOT723
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-723
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
на замовлення 15287 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.32 грн |
| 15+ | 20.07 грн |
| 100+ | 12.71 грн |
| 500+ | 8.93 грн |
| 1000+ | 7.53 грн |
| 2000+ | 7.15 грн |
| NTLUS3A18PZTBG |
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Виробник: onsemi
Description: MOSFET P-CH 20V 5.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 5.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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| NTLUS3A40PZTBG |
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Виробник: onsemi
Description: MOSFET P-CH 20V 4A 6UDFN
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Description: MOSFET P-CH 20V 4A 6UDFN
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
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| NTMFS4837NHT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 10.2A/75A 5DFN
Power Dissipation (Max): 880mW (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3016 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Description: MOSFET N-CH 30V 10.2A/75A 5DFN
Power Dissipation (Max): 880mW (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3016 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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| NTMFS4C025NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 20A/69A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 20A/69A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 57 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.57 грн |
| 10+ | 33.80 грн |
| NTMFS4C029NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 15A/46A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V
Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Description: MOSFET N-CH 30V 15A/46A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 5.88mOhm @ 30A, 10V
Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
на замовлення 18550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.75 грн |
| 14+ | 22.91 грн |
| 100+ | 14.60 грн |
| 500+ | 10.34 грн |
| NTMS4937NR2G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 8.6A 8SOIC
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2563 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 810mW (Ta)
Description: MOSFET N-CH 30V 8.6A 8SOIC
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2563 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 810mW (Ta)
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| NTR3C21NZT1G |
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Виробник: onsemi
Description: MOSFET N-CH 20V 3.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 470mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 3.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 470mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 755 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.20 грн |
| 14+ | 22.09 грн |
| 100+ | 14.07 грн |
| 500+ | 9.94 грн |
| NTS10120MFST1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 120V 10A 5DFN
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 120V 10A 5DFN
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
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| NTS260ESFT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
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| NTTFS4C06NTAG |
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Виробник: onsemi
Description: MOSFET N-CH 30V 11A/67A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 3366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 810mW (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11A/67A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 3366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 810mW (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 2310 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.22 грн |
| 10+ | 36.56 грн |
| 100+ | 23.68 грн |
| 500+ | 17.02 грн |
| NTTFS5116PLTWG |
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Виробник: onsemi
Description: MOSFET P-CH 60V 5.7A 8WDFN
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Description: MOSFET P-CH 60V 5.7A 8WDFN
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
на замовлення 4950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.41 грн |
| 10+ | 59.77 грн |
| 100+ | 39.46 грн |
| 500+ | 28.84 грн |
| 1000+ | 26.20 грн |
| 2000+ | 23.98 грн |
| NUF4310MNTAG |
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Виробник: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Number of Channels: 4
Part Status: Active
ESD Protection: Yes
Resistance - Channel (Ohms): 100
Center / Cutoff Frequency: 185MHz (Cutoff)
Technology: RC (Pi)
Applications: Data Lines for Mobile Devices
Filter Order: 2nd
Attenuation Value: -25dB @ 800MHz ~ 4GHz
Height: 0.031" (0.79mm)
Values: R = 100Ohms, C = 9pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.039" W (1.60mm x 1.00mm)
Package / Case: 8-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: FILTER RC(PI) 100 OHMS ESD SMD
Number of Channels: 4
Part Status: Active
ESD Protection: Yes
Resistance - Channel (Ohms): 100
Center / Cutoff Frequency: 185MHz (Cutoff)
Technology: RC (Pi)
Applications: Data Lines for Mobile Devices
Filter Order: 2nd
Attenuation Value: -25dB @ 800MHz ~ 4GHz
Height: 0.031" (0.79mm)
Values: R = 100Ohms, C = 9pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.039" W (1.60mm x 1.00mm)
Package / Case: 8-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 8354 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.80 грн |
| 16+ | 19.40 грн |
| 25+ | 17.82 грн |
| 50+ | 15.73 грн |
| 100+ | 14.79 грн |
| 250+ | 13.64 грн |
| 500+ | 12.62 грн |
| 1000+ | 11.87 грн |
| NUP4106DR2G |
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Виробник: onsemi
Description: TVS DIODE 3.3VWM 15VC 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Description: TVS DIODE 3.3VWM 15VC 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 500W
Power Line Protection: Yes
на замовлення 5333 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.99 грн |
| 10+ | 171.70 грн |
| 100+ | 120.15 грн |
| 500+ | 92.10 грн |
| 1000+ | 92.01 грн |
| NVD6416ANLT4G-VF01 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 19A DPAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 19A DPAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7659 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.11 грн |
| 10+ | 73.35 грн |
| 100+ | 49.06 грн |
| 500+ | 36.29 грн |
| 1000+ | 33.16 грн |
| NVD6495NLT4G-VF01 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 25A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 100V 25A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
на замовлення 1858 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.76 грн |
| 10+ | 76.41 грн |
| 100+ | 51.52 грн |
| 500+ | 38.34 грн |
| 1000+ | 35.12 грн |
| NVMD6N04R2G |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 4.6A 8-SOIC
Description: MOSFET 2N-CH 40V 4.6A 8-SOIC
товару немає в наявності
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од. на суму грн.
| NVMFS5C450NLWFAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 110A 5DFN
Qualification: AEC-Q101
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Description: MOSFET N-CH 40V 110A 5DFN
Qualification: AEC-Q101
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
на замовлення 1850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 191.40 грн |
| 10+ | 118.65 грн |
| 100+ | 81.40 грн |
| 500+ | 61.46 грн |
| NVMFS5C460NLAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 21A/78A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 856 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 161.96 грн |
| 10+ | 99.92 грн |
| 100+ | 68.00 грн |
| 500+ | 51.00 грн |
| NVR5124PLT1G |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 60V 1.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 3A, 10V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 1.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 3A, 10V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Qualification: AEC-Q101
на замовлення 31085 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 51.92 грн |
| 10+ | 31.42 грн |
| 100+ | 20.21 грн |
| 500+ | 14.42 грн |
| 1000+ | 12.96 грн |
| NVTFS4C06NWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 21A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 21A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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| NVTFS5C673NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 13A/50A 8WDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 13A/50A 8WDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 463 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.89 грн |
| 10+ | 71.34 грн |
| 100+ | 50.73 грн |
| NVTFS5C680NLTAG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 7.82A/20A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.82A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 7.82A/20A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.82A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 25 V
Qualification: AEC-Q101
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.06 грн |
| 10+ | 62.83 грн |
| 100+ | 41.73 грн |
| 500+ | 30.64 грн |
| NVTR0202PLT1G |
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Виробник: onsemi
Description: MOSFET P-CH 20V 400MA SOT23
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 20V 400MA SOT23
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Qualification: AEC-Q101
Grade: Automotive
на замовлення 17777 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.12 грн |
| 17+ | 18.36 грн |
| 100+ | 9.26 грн |
| 500+ | 7.70 грн |
| 1000+ | 5.99 грн |
| NZ9F18VST5G |
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Виробник: onsemi
Description: DIODE ZENER 18V 250MW SOD923
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: SOD-923
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-923
Tolerance: ±2%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 18V 250MW SOD923
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: SOD-923
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-923
Tolerance: ±2%
Packaging: Cut Tape (CT)
на замовлення 342 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.82 грн |
| 23+ | 13.06 грн |
| 100+ | 4.35 грн |
| NZ9F18VT5G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 18V 250MW SOD923
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-923
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: SOD-923
Impedance (Max) (Zzt): 50 Ohms
Description: DIODE ZENER 18V 250MW SOD923
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-923
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: SOD-923
Impedance (Max) (Zzt): 50 Ohms
на замовлення 7935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.05 грн |
| 27+ | 11.19 грн |
| 100+ | 5.44 грн |
| 500+ | 4.63 грн |
| 1000+ | 4.14 грн |
| NZ9F5V6ST5G |
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Виробник: onsemi
Description: DIODE ZENER 5.6V 250MW SOD923
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOD-923
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-923
Tolerance: ±2%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 5.6V 250MW SOD923
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOD-923
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-923
Tolerance: ±2%
Packaging: Cut Tape (CT)
на замовлення 6963 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.40 грн |
| 36+ | 8.36 грн |
| 100+ | 5.56 грн |
| 500+ | 3.98 грн |
| 1000+ | 3.57 грн |
| 2000+ | 3.21 грн |
| PCA9306FMUTAG |
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Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 1.8 V ~ 5.5 V
Voltage - VCCA: 1 V ~ 3.6 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-UDFN (1.45x1)
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 8-UFDFN
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 1.8 V ~ 5.5 V
Voltage - VCCA: 1 V ~ 3.6 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-UDFN (1.45x1)
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 8-UFDFN
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
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| PCA9535ECDTR2G |
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Виробник: onsemi
Description: IC XPND 100KHZ I2C SMBUS 24TSSOP
DigiKey Programmable: Not Verified
Part Status: Active
Current - Output Source/Sink: 25mA
Supplier Device Package: 24-TSSOP
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Features: POR
Packaging: Cut Tape (CT)
Description: IC XPND 100KHZ I2C SMBUS 24TSSOP
DigiKey Programmable: Not Verified
Part Status: Active
Current - Output Source/Sink: 25mA
Supplier Device Package: 24-TSSOP
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Features: POR
Packaging: Cut Tape (CT)
на замовлення 1211 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 372.73 грн |
| 10+ | 238.49 грн |
| 25+ | 208.22 грн |
| 100+ | 164.04 грн |
| 250+ | 148.98 грн |
| 500+ | 139.85 грн |
| 1000+ | 130.13 грн |
| PCA9535ECDWR2G |
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Виробник: onsemi
Description: IC XPNDR 100KHZ I2C SMBUS 24SOIC
Part Status: Obsolete
Current - Output Source/Sink: 25mA
Supplier Device Package: 24-SOIC
Interrupt Output: Yes
DigiKey Programmable: Not Verified
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Features: POR
Packaging: Cut Tape (CT)
Description: IC XPNDR 100KHZ I2C SMBUS 24SOIC
Part Status: Obsolete
Current - Output Source/Sink: 25mA
Supplier Device Package: 24-SOIC
Interrupt Output: Yes
DigiKey Programmable: Not Verified
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Features: POR
Packaging: Cut Tape (CT)
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| S1Z1SMB5919BT3G |
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Виробник: onsemi
Description: DIODE ZENER 5.6V 3W SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Supplier Device Package: SMB
Part Status: Active
Tolerance: ±5%
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 3W SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Supplier Device Package: SMB
Part Status: Active
Tolerance: ±5%
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1174 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.47 грн |
| 15+ | 20.37 грн |
| 100+ | 19.27 грн |
| 500+ | 17.44 грн |
| 1000+ | 15.37 грн |
| S2SA1774G |
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Виробник: onsemi
Description: TRANS PNP 50V 0.1A SC75 SOT416
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-75, SOT-416
Description: TRANS PNP 50V 0.1A SC75 SOT416
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-75, SOT-416
на замовлення 5105 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.47 грн |
| 23+ | 13.28 грн |
| 100+ | 8.36 грн |
| 500+ | 5.81 грн |
| 1000+ | 5.15 грн |
| SBAS16LT3G |
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Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.62 грн |
| 45+ | 6.72 грн |
| 100+ | 4.16 грн |
| 500+ | 2.83 грн |
| 1000+ | 2.48 грн |
| 2000+ | 2.19 грн |
| 5000+ | 1.84 грн |
| SBAT54CWT1G |
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Виробник: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SC703
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 30V 200MA SC703
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.87 грн |
| 15+ | 20.67 грн |
| 100+ | 13.12 грн |
| 500+ | 9.22 грн |
| 1000+ | 8.22 грн |
| SBAV199LT3G |
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Виробник: onsemi
Description: DIODE ARRAY GP 70V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 70 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 70V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 70 V
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.40 грн |
| 43+ | 7.01 грн |
| 100+ | 4.30 грн |
| 500+ | 2.93 грн |
| 1000+ | 2.57 грн |
| 2000+ | 2.27 грн |
| 5000+ | 1.90 грн |
| SBAV70LT3G |
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Виробник: onsemi
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
Qualification: AEC-Q101
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SBAW56LT3G |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.17 грн |
| 40+ | 7.61 грн |
| 100+ | 4.69 грн |
| 500+ | 3.19 грн |
| 1000+ | 2.81 грн |
| 2000+ | 2.48 грн |
| 5000+ | 2.08 грн |
| SBC817-25LT3G |
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Виробник: onsemi
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.27 грн |
| 32+ | 9.55 грн |
| 100+ | 5.91 грн |
| 500+ | 4.06 грн |
| 1000+ | 3.58 грн |
| 2000+ | 3.17 грн |
| 5000+ | 2.68 грн |
| SBC847BDW1T3G |
![]() |
Виробник: onsemi
Description: TRANS 2NPN 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2NPN 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SBC847CWT1G |
![]() |
Виробник: onsemi
Description: TRANS NPN 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12003 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.30 грн |
| 55+ | 5.52 грн |
| 100+ | 3.41 грн |
| 500+ | 2.31 грн |
| 1000+ | 2.02 грн |
| SBC848BLT1G |
![]() |
Виробник: onsemi
Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8161 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.85 грн |
| 46+ | 6.49 грн |
| 100+ | 3.98 грн |
| 500+ | 2.71 грн |
| 1000+ | 2.38 грн |
| SBC856BDW1T3G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP 65V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP 65V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 599 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.82 грн |
| 29+ | 10.37 грн |
| 100+ | 6.45 грн |
| 500+ | 4.44 грн |
| SBC857ALT1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.15 грн |
| 25+ | 11.94 грн |
| 100+ | 7.48 грн |
| 500+ | 5.17 грн |
| 1000+ | 4.57 грн |
| SBCP53-10T1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 80V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 80V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
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| SBCP53T1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 80V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 80V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
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| SBCP56T1G |
![]() |
Виробник: onsemi
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
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| SBCP56T3G |
![]() |
Виробник: onsemi
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.14 грн |
| 10+ | 30.45 грн |
| SBRS8190T3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 90V 1A SMB
Description: DIODE SCHOTTKY 90V 1A SMB
товару немає в наявності
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од. на суму грн.
| SBSP52T1G |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 80V 1A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223 (TO-261)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS NPN DARL 80V 1A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223 (TO-261)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 6427 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 51.92 грн |
| 10+ | 31.27 грн |
| 100+ | 20.12 грн |
| 500+ | 14.36 грн |
| SCM1293A-04SO |
![]() |
Виробник: onsemi
Description: TVS DIODE 9.9VC SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C
Applications: DVI, HDMI
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 9.9V (Typ)
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 9.9VC SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C
Applications: DVI, HDMI
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 9.9V (Typ)
Power Line Protection: Yes
Part Status: Active
на замовлення 112347 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 20.92 грн |
| 24+ | 12.54 грн |
| 100+ | 7.84 грн |
| 500+ | 5.43 грн |
| 1000+ | 4.81 грн |
| SDTA114YET1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.95 грн |
| 38+ | 7.98 грн |
| 100+ | 4.95 грн |
| 500+ | 3.38 грн |
| 1000+ | 2.97 грн |




































