| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| QPA1223 | onsemi | Description: EMITTER-DETECOR HERMETIC PAIR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
NTMTSC002N10MCTXG | onsemi |
Description: MOSFET N-CH 100V 45A/236A 8TDFNWPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V Power Dissipation (Max): 9W (Ta), 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 520µA Supplier Device Package: 8-TDFNW (8.3x8.4) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NTMTSC002N10MCTXG | onsemi |
Description: MOSFET N-CH 100V 45A/236A 8TDFNWInput Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Supplier Device Package: 8-TDFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 520µA Power Dissipation (Max): 9W (Ta), 255W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 4327 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NTMTS6D0N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4.5V @ 379µA Power Dissipation (Max): 4.9W (Ta), 245W (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NTMTS6D0N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4.5V @ 379µA Power Dissipation (Max): 4.9W (Ta), 245W (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NTMTSC1D6N10MCTXG | onsemi |
Description: MOSFET N-CH 100V 35A/267A 8TDFNWRds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 8-TDFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 650µA Power Dissipation (Max): 5.1W (Ta), 291W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NTMTSC1D6N10MCTXG | onsemi |
Description: MOSFET N-CH 100V 35A/267A 8TDFNWInput Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: 8-TDFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 650µA Power Dissipation (Max): 5.1W (Ta), 291W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 64450 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NTMTS4D3N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 293W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
NTMTS4D3N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 293W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V |
на замовлення 181 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NTMTSC4D3N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 293W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-TDFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
NTMTSC4D3N15MC | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 15Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 293W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-TDFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
NTMTSC1D5N08MC | onsemi |
Description: MOSFET N-CH 80V 33A/287A 8DFNWRds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-TDFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 650µA Power Dissipation (Max): 3.3W (Ta), 250W (Tc) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
NTMT190N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 129W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.4mA Supplier Device Package: 4-TDFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
NTMT190N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 129W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.4mA Supplier Device Package: 4-TDFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
NTMT150N65S3HF | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NTMT150N65S3HF | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V |
на замовлення 22620 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NTMT125N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEInput Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 4-TDFN (8x8) Vgs(th) (Max) @ Id: 4V @ 2.1mA Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
ADP32120091MNR2G | onsemi |
Description: SWITCHING CONTROLLERPackaging: Bulk |
на замовлення 181383 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
ADP3212MNR2G | onsemi |
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFNPackaging: Bulk Package / Case: 48-VFQFN Exposed Pad Voltage - Output: 0.3V ~ 1.5V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 3.3V ~ 22V Operating Temperature: -40°C ~ 100°C Applications: Controller, Intel IMVP-6.5™ Supplier Device Package: 48-QFN (7x7) |
на замовлення 957926 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
ADP3212AMNR2G | onsemi |
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFNPackaging: Bulk Package / Case: 48-VFQFN Exposed Pad Voltage - Output: Up to 1.5V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 3.3V ~ 22V Operating Temperature: -40°C ~ 100°C Applications: Controller, Intel IMVP-6.5™ Supplier Device Package: 48-QFN (7x7) |
на замовлення 3830 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MC74HC75D | onsemi |
Description: 74HC75 - QUAD BISTABLE TRANSPARA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
MCR8M | onsemi |
Description: THYRISTOR SCR 600V 80A |
на замовлення 24150 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NL17SZ374DBVT1G | onsemi |
Description: IC FF D-TYPE 1-ELE 1-BIT SC-74Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Iq): 1 µA Current - Output High, Low: 32mA, 32mA Trigger Type: Positive Edge Clock Frequency: 175 MHz Input Capacitance: 4 pF Supplier Device Package: SC-74 Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Number of Bits per Element: 1 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMSZ1600-18T3 | onsemi |
Description: DIODE ZENER 0.5W SPCL SOD123 Packaging: Bulk |
на замовлення 160000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
PN4121 | onsemi |
Description: TRANS PNP 40V 0.1A TO92-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 1V Current - Collector Cutoff (Max): 25nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
5LN01C-TB-E | onsemi |
Description: MOSFET N-CH 50V 100MA 3CPPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V Power Dissipation (Max): 250mW (Ta) Supplier Device Package: SC-59-3/CP3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V |
на замовлення 573129 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NVMYS6D2N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 17A/71A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 10519 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NVBLS0D5N04CTXG | onsemi |
Description: MOSFET N-CH 40V 65A/300A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 300A (Tc) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 50A, 10V Power Dissipation (Max): 4.3W (Ta), 198.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 475µA Supplier Device Package: 8-HPSOF Grade: Automotive Part Status: Active Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1106 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| SECO-RSL10-CAM-GEVB | onsemi | Description: - |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||
|
NCP500SQL28T1G | onsemi |
Description: IC REG LINEAR 2.8V 150MA 6-DFNPackaging: Bulk Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 6-DFN (2x2.2) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable PSRR: 62dB (1kHz) Voltage Dropout (Max): 0.25V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
на замовлення 41500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NCP500SQL27T1G | onsemi |
Description: IC REG LINEAR 2.7V 150MA 6-DFNPackaging: Bulk Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 6-DFN (2x2.2) Voltage - Output (Min/Fixed): 2.7V Control Features: Enable PSRR: 62dB (1kHz) Voltage Dropout (Max): 0.26V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NCP500SN26T1G | onsemi |
Description: IC REG LINEAR 2.6V 150MA 5-TSOPPackaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 2.6V Control Features: Enable PSRR: 62dB (1kHz) Voltage Dropout (Max): 0.01V @ 1mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NCP500SN185T1G | onsemi |
Description: IC REG LINEAR 1.85V 150MA 5-TSOPPackaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 1.85V Control Features: Enable PSRR: 62dB (1kHz) Voltage Dropout (Max): 0.01V @ 1mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NCP500SN27T1G | onsemi |
Description: IC REG LINEAR 2.7V 150MA 5-TSOPPackaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 1 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 2.7V Control Features: Enable PSRR: 62dB (1kHz) Voltage Dropout (Max): 0.26V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NCP51705MNTXG | onsemi |
Description: IC GATE DRVR LOW-SIDE 24QFNPackaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 22V Input Type: Inverting, Non-Inverting Supplier Device Package: 24-QFN (4x4) Rise / Fall Time (Typ): 8ns, 8ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: SiC MOSFET Logic Voltage - VIL, VIH: 1.2V, 1.6V Current - Peak Output (Source, Sink): 6A, 6A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 84000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NCP51705MNTXG | onsemi |
Description: IC GATE DRVR LOW-SIDE 24QFNPackaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 22V Input Type: Inverting, Non-Inverting Supplier Device Package: 24-QFN (4x4) Rise / Fall Time (Typ): 8ns, 8ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: SiC MOSFET Logic Voltage - VIL, VIH: 1.2V, 1.6V Current - Peak Output (Source, Sink): 6A, 6A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 84686 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| CS5121KD16 | onsemi |
Description: ANA BUCK NONSYNC NFET CTL Packaging: Bulk Part Status: Active |
на замовлення 2559 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
|
|
NIS6432MT2TWG | onsemi |
Description: IC ELECTRONIC FUSE 12WQFNPackaging: Tape & Reel (TR) Package / Case: 12-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 3.3V Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 12-WQFN (3x2) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
|
NIS6432MT2TWG | onsemi |
Description: IC ELECTRONIC FUSE 12WQFNPackaging: Cut Tape (CT) Package / Case: 12-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 3.3V Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 12-WQFN (3x2) Part Status: Active |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
NCV8164CSNADJT1G | onsemi |
Description: IC REG LIN POS ADJ 300MA 5TSOP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
|
NCV8164CSNADJT1G | onsemi |
Description: IC REG LIN POS ADJ 300MA 5TSOP |
на замовлення 2839 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
|
NIS6432MT1TWG | onsemi |
Description: IC ELECTRONIC FUSE 12WQFNPackaging: Tape & Reel (TR) Package / Case: 12-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 3.3V Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 12-WQFN (3x2) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
|
NIS6432MT1TWG | onsemi |
Description: IC ELECTRONIC FUSE 12WQFNPackaging: Cut Tape (CT) Package / Case: 12-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 3.3V Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 12-WQFN (3x2) Part Status: Active |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| SMT10B260T3 | onsemi |
Description: THY SMB SPECIAL SURGE Packaging: Bulk |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
|
MMT05B260T3G | onsemi |
Description: THYRISTOR 200V 150A DO-214AA Packaging: Bulk Capacitance: 75pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 320V Voltage - Off State: 200V Voltage - On State: 3 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 50 A Current - Peak Pulse (8/20µs): 150 A |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MMT08B260T3G | onsemi |
Description: THYRISTOR 200V 250A DO-214AAPackaging: Bulk Capacitance: 55pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 320V Voltage - Off State: 200V Voltage - On State: 3 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 80 A Current - Peak Pulse (8/20µs): 250 A |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MMT05B260T3 | onsemi |
Description: THYRISTOR 200V 150A DO-214AA Packaging: Bulk Capacitance: 75pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 320V Voltage - Off State: 200V Voltage - On State: 3 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 50 A Current - Peak Pulse (8/20µs): 150 A |
на замовлення 2465 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SZBZX84C3V0LT1 | onsemi |
Description: DIODE ZENER 3V 225MW SOT23Tolerance: ±5% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SZBZX84C3V0LT3 | onsemi | Description: ZENER DIODE, 3V, 0.25W, UNIDIREC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| RD2006LS-S-SB5 | onsemi |
Description: DIODE STANDARD 20A TO220FISB Packaging: Bulk Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220FI(LS)-SB Operating Temperature - Junction: 150°C (Max) Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
на замовлення 8398 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
|
RD2006FR-H | onsemi |
Description: DIODE GEN PURP 600V 20A TO220F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
NL37WZ07US | onsemi |
Description: IC BUFF/DVR TRPL N-INV OD US8 |
на замовлення 278845 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NL37WZ16US | onsemi |
Description: IC BUFFER TRIPLE NON-INVERT US8 |
товару немає в наявності |
Мінімальне замовлення: 622 шт В кошику од. на суму грн. | ||||||||||||
| STK762-921G-E | onsemi |
Description: IGBT ACTIVE FILTER POWER ICPackaging: Bulk |
на замовлення 2028 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
|
SC239DR2G | onsemi | Description: IC COMPARATOR QUAD 14-SOIC |
на замовлення 6372 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2071 шт В кошику од. на суму грн. | ||||||||||||
| STR-SMARTLIBGAUGE-GEVK | onsemi |
Description: LC709204F SMART LIB GAUGE AUTOMAContents: Board(s), Cable(s) Part Status: Active Embedded: Yes, MCU Primary Attributes: Li-Ion / Li-Pol Supplied Contents: Board(s), Cable(s) Utilized IC / Part: LC709204F Type: Power Management Function: Battery Gauge Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | |||||||||||||
| NLVHC1GT66MUR2G | onsemi |
Description: ANALOG SWITCHPackaging: Bulk |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
|
MMBT2369LT1G | onsemi |
Description: TRANS NPN 15V 0.2A SOT23-3Power - Max: 225 mW Voltage - Collector Emitter Breakdown (Max): 15 V Current - Collector (Ic) (Max): 200 mA Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 350mV Current - Collector Cutoff (Max): 400nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
на замовлення 126281 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
P1819GF-08SR | onsemi |
Description: IC FANOUT DIST 8SOICDigiKey Programmable: Not Verified Number of Circuits: 1 Divider/Multiplier: Yes/No PLL: Yes Supplier Device Package: 8-SOIC Differential - Input:Output: No/No Ratio - Input:Output: 1:2 Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C Input: Clock, Crystal Type: Fanout Distribution, Frequency Modulator, Spread Spectrum Clock Generator Frequency - Max: 40MHz Output: CMOS Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
на замовлення 40996 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NCV8161AMX180TBG | onsemi |
Description: IC REG LINEAR 1.8V 450MA 4-XDFNProtection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.45V @ 450mA PSRR: 91dB ~ 48dB (100Hz ~ 100kHz) Control Features: Enable Voltage - Output (Min/Fixed): 1.8V Supplier Device Package: 4-XDFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 23 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 450mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
|
| QPA1223 |
Виробник: onsemi
Description: EMITTER-DETECOR HERMETIC PAIR
Description: EMITTER-DETECOR HERMETIC PAIR
товару немає в наявності
В кошику
од. на суму грн.
| NTMTSC002N10MCTXG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 520µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 520µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 195.07 грн |
| NTMTSC002N10MCTXG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 520µA
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 520µA
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 4327 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 513.10 грн |
| 10+ | 333.07 грн |
| 100+ | 241.95 грн |
| 500+ | 215.78 грн |
| NTMTS6D0N15MC |
![]() |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Power Dissipation (Max): 4.9W (Ta), 245W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: SINGLE N-CHANNEL POWER MOSFET 15
Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Power Dissipation (Max): 4.9W (Ta), 245W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 213.37 грн |
| NTMTS6D0N15MC |
![]() |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Power Dissipation (Max): 4.9W (Ta), 245W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: SINGLE N-CHANNEL POWER MOSFET 15
Input Capacitance (Ciss) (Max) @ Vds: 4815 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4.5V @ 379µA
Power Dissipation (Max): 4.9W (Ta), 245W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 433.86 грн |
| 10+ | 293.45 грн |
| 100+ | 220.19 грн |
| 500+ | 192.82 грн |
| NTMTSC1D6N10MCTXG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 208.59 грн |
| NTMTSC1D6N10MCTXG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 64450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 502.70 грн |
| 10+ | 327.21 грн |
| 100+ | 245.86 грн |
| NTMTS4D3N15MC |
![]() |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTMTS4D3N15MC |
![]() |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
на замовлення 181 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 619.56 грн |
| 10+ | 406.61 грн |
| 100+ | 299.27 грн |
| NTMTSC4D3N15MC |
![]() |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTMTSC4D3N15MC |
![]() |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Description: SINGLE N-CHANNEL POWER MOSFET 15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 293W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
товару немає в наявності
В кошику
од. на суму грн.
| NTMTSC1D5N08MC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 33A/287A 8DFNW
Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 3.3W (Ta), 250W (Tc)
Description: MOSFET N-CH 80V 33A/287A 8DFNW
Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 3.3W (Ta), 250W (Tc)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTMT190N65S3H |
![]() |
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTMT190N65S3H |
![]() |
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| NTMT150N65S3HF |
![]() |
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 224.95 грн |
| NTMT150N65S3HF |
![]() |
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
на замовлення 22620 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 570.74 грн |
| 10+ | 372.69 грн |
| 50+ | 296.92 грн |
| 100+ | 255.80 грн |
| 500+ | 248.82 грн |
| NTMT125N65S3H |
![]() |
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-TDFN (8x8)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-TDFN (8x8)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ADP32120091MNR2G |
![]() |
на замовлення 181383 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 279+ | 73.98 грн |
| ADP3212MNR2G |
![]() |
Виробник: onsemi
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.3V ~ 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.3V ~ 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
на замовлення 957926 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 245+ | 83.72 грн |
| ADP3212AMNR2G |
![]() |
Виробник: onsemi
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Up to 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Up to 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
на замовлення 3830 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 176+ | 116.66 грн |
| MC74HC75D |
![]() |
Виробник: onsemi
Description: 74HC75 - QUAD BISTABLE TRANSPARA
Description: 74HC75 - QUAD BISTABLE TRANSPARA
товару немає в наявності
В кошику
од. на суму грн.
| MCR8M |
![]() |
Виробник: onsemi
Description: THYRISTOR SCR 600V 80A
Description: THYRISTOR SCR 600V 80A
на замовлення 24150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1202+ | 18.86 грн |
| NL17SZ374DBVT1G |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE 1-ELE 1-BIT SC-74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 1 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 175 MHz
Input Capacitance: 4 pF
Supplier Device Package: SC-74
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF D-TYPE 1-ELE 1-BIT SC-74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 1 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 175 MHz
Input Capacitance: 4 pF
Supplier Device Package: SC-74
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Bits per Element: 1
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.06 грн |
| SMSZ1600-18T3 |
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11539+ | 2.25 грн |
| PN4121 |
![]() |
Виробник: onsemi
Description: TRANS PNP 40V 0.1A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 1V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS PNP 40V 0.1A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 1V
Current - Collector Cutoff (Max): 25nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 5LN01C-TB-E |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: SC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
Description: MOSFET N-CH 50V 100MA 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: SC-59-3/CP3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
на замовлення 573129 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3122+ | 6.77 грн |
| NVMYS6D2N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 17A/71A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 17A/71A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10519 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.88 грн |
| 10+ | 81.17 грн |
| 100+ | 54.48 грн |
| 500+ | 40.40 грн |
| 1000+ | 36.95 грн |
| NVBLS0D5N04CTXG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 65A/300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 50A, 10V
Power Dissipation (Max): 4.3W (Ta), 198.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 475µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Part Status: Active
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 65A/300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 50A, 10V
Power Dissipation (Max): 4.3W (Ta), 198.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 475µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Part Status: Active
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1106 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 707.62 грн |
| 10+ | 468.35 грн |
| 100+ | 355.57 грн |
| SECO-RSL10-CAM-GEVB |
Виробник: onsemi
Description: -
Description: -
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
| NCP500SQL28T1G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 2.8V 150MA 6-DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LINEAR 2.8V 150MA 6-DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 41500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 843+ | 24.89 грн |
| NCP500SQL27T1G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 2.7V 150MA 6-DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LINEAR 2.7V 150MA 6-DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2.2)
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 843+ | 24.89 грн |
| NCP500SN26T1G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 2.6V 150MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.6V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.01V @ 1mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LINEAR 2.6V 150MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.6V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.01V @ 1mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 827+ | 24.89 грн |
| NCP500SN185T1G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 1.85V 150MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.01V @ 1mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LINEAR 1.85V 150MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.01V @ 1mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 827+ | 24.89 грн |
| NCP500SN27T1G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 2.7V 150MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LINEAR 2.7V 150MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 62dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 827+ | 24.89 грн |
| NCP51705MNTXG |
![]() |
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFN (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFN (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 167.20 грн |
| NCP51705MNTXG |
![]() |
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFN (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 22V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 24-QFN (4x4)
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 84686 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 307.38 грн |
| 10+ | 224.08 грн |
| 25+ | 206.18 грн |
| 100+ | 175.01 грн |
| 250+ | 166.19 грн |
| 500+ | 165.81 грн |
| CS5121KD16 |
на замовлення 2559 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 197+ | 113.09 грн |
| NIS6432MT2TWG |
![]() |
Виробник: onsemi
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NIS6432MT2TWG |
![]() |
Виробник: onsemi
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.47 грн |
| 10+ | 109.53 грн |
| 100+ | 88.04 грн |
| 500+ | 67.89 грн |
| 1000+ | 56.25 грн |
| NCV8164CSNADJT1G |
![]() |
Виробник: onsemi
Description: IC REG LIN POS ADJ 300MA 5TSOP
Description: IC REG LIN POS ADJ 300MA 5TSOP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCV8164CSNADJT1G |
![]() |
Виробник: onsemi
Description: IC REG LIN POS ADJ 300MA 5TSOP
Description: IC REG LIN POS ADJ 300MA 5TSOP
на замовлення 2839 шт:
термін постачання 21-31 дні (днів)
| NIS6432MT1TWG |
![]() |
Виробник: onsemi
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NIS6432MT1TWG |
![]() |
Виробник: onsemi
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
Description: IC ELECTRONIC FUSE 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.3V
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 12-WQFN (3x2)
Part Status: Active
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 128.88 грн |
| 10+ | 111.23 грн |
| 100+ | 86.71 грн |
| 500+ | 67.22 грн |
| 1000+ | 53.07 грн |
| SMT10B260T3 |
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11539+ | 2.19 грн |
| MMT05B260T3G |
Виробник: onsemi
Description: THYRISTOR 200V 150A DO-214AA
Packaging: Bulk
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
Description: THYRISTOR 200V 150A DO-214AA
Packaging: Bulk
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1665+ | 13.82 грн |
| MMT08B260T3G |
![]() |
Виробник: onsemi
Description: THYRISTOR 200V 250A DO-214AA
Packaging: Bulk
Capacitance: 55pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
Description: THYRISTOR 200V 250A DO-214AA
Packaging: Bulk
Capacitance: 55pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1010+ | 20.27 грн |
| MMT05B260T3 |
Виробник: onsemi
Description: THYRISTOR 200V 150A DO-214AA
Packaging: Bulk
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
Description: THYRISTOR 200V 150A DO-214AA
Packaging: Bulk
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 320V
Voltage - Off State: 200V
Voltage - On State: 3 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
на замовлення 2465 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1402+ | 16.13 грн |
| SZBZX84C3V0LT1 |
![]() |
Виробник: onsemi
Description: DIODE ZENER 3V 225MW SOT23
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3V 225MW SOT23
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3620+ | 5.48 грн |
| SZBZX84C3V0LT3 |
Виробник: onsemi
Description: ZENER DIODE, 3V, 0.25W, UNIDIREC
Description: ZENER DIODE, 3V, 0.25W, UNIDIREC
товару немає в наявності
В кошику
од. на суму грн.
| RD2006LS-S-SB5 |
Виробник: onsemi
Description: DIODE STANDARD 20A TO220FISB
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE STANDARD 20A TO220FISB
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 8398 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 701+ | 33.02 грн |
| RD2006FR-H |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 600V 20A TO220F
Description: DIODE GEN PURP 600V 20A TO220F
товару немає в наявності
В кошику
од. на суму грн.
| NL37WZ07US |
![]() |
Виробник: onsemi
Description: IC BUFF/DVR TRPL N-INV OD US8
Description: IC BUFF/DVR TRPL N-INV OD US8
на замовлення 278845 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2404+ | 9.05 грн |
| NL37WZ16US |
![]() |
Виробник: onsemi
Description: IC BUFFER TRIPLE NON-INVERT US8
Description: IC BUFFER TRIPLE NON-INVERT US8
товару немає в наявності
Мінімальне замовлення: 622 шт
В кошику
од. на суму грн.
| STK762-921G-E |
![]() |
на замовлення 2028 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 6469.40 грн |
| SC239DR2G |
Виробник: onsemi
Description: IC COMPARATOR QUAD 14-SOIC
Description: IC COMPARATOR QUAD 14-SOIC
на замовлення 6372 шт:
термін постачання 21-31 дні (днів)
| STR-SMARTLIBGAUGE-GEVK |
![]() |
Виробник: onsemi
Description: LC709204F SMART LIB GAUGE AUTOMA
Contents: Board(s), Cable(s)
Part Status: Active
Embedded: Yes, MCU
Primary Attributes: Li-Ion / Li-Pol
Supplied Contents: Board(s), Cable(s)
Utilized IC / Part: LC709204F
Type: Power Management
Function: Battery Gauge
Packaging: Bulk
Description: LC709204F SMART LIB GAUGE AUTOMA
Contents: Board(s), Cable(s)
Part Status: Active
Embedded: Yes, MCU
Primary Attributes: Li-Ion / Li-Pol
Supplied Contents: Board(s), Cable(s)
Utilized IC / Part: LC709204F
Type: Power Management
Function: Battery Gauge
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| NLVHC1GT66MUR2G |
![]() |
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1817+ | 11.93 грн |
| MMBT2369LT1G |
![]() |
Виробник: onsemi
Description: TRANS NPN 15V 0.2A SOT23-3
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 350mV
Current - Collector Cutoff (Max): 400nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: TRANS NPN 15V 0.2A SOT23-3
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 350mV
Current - Collector Cutoff (Max): 400nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
на замовлення 126281 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6648+ | 3.46 грн |
| P1819GF-08SR |
![]() |
Виробник: onsemi
Description: IC FANOUT DIST 8SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: Yes/No
PLL: Yes
Supplier Device Package: 8-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:2
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: Clock, Crystal
Type: Fanout Distribution, Frequency Modulator, Spread Spectrum Clock Generator
Frequency - Max: 40MHz
Output: CMOS
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC FANOUT DIST 8SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: Yes/No
PLL: Yes
Supplier Device Package: 8-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:2
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: Clock, Crystal
Type: Fanout Distribution, Frequency Modulator, Spread Spectrum Clock Generator
Frequency - Max: 40MHz
Output: CMOS
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
на замовлення 40996 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 190+ | 108.68 грн |
| NCV8161AMX180TBG |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 1.8V 450MA 4-XDFN
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.45V @ 450mA
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-XDFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 23 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 450mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: IC REG LINEAR 1.8V 450MA 4-XDFN
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.45V @ 450mA
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-XDFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 23 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 450mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 7.84 грн |
| 10000+ | 7.35 грн |















,TO-226_straightlead.jpg)















