Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NVMTS0D7N04CLTXG | onsemi |
Description: AFSM T6 40V LL NCH Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc) Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 205W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NVMTS0D7N04CLTXG | onsemi |
Description: AFSM T6 40V LL NCH Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc) Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 205W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3050 шт: термін постачання 21-31 дні (днів) |
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MC74VHCT132AD | onsemi |
Description: IC GATE NAND Features: Schmitt Trigger Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.35V ~ 0.6V Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 25513 шт: термін постачання 21-31 дні (днів) |
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MC74VHCT132ADT | onsemi |
Description: NAND GATE, AHCT/VHCT SERIES Packaging: Bulk |
на замовлення 4240 шт: термін постачання 21-31 дні (днів) |
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2SD734E | onsemi |
Description: 2SD734 - NPN EPITAXIAL PLANAR SI Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V Frequency - Transition: 250MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 600 mW |
на замовлення 30260 шт: термін постачання 21-31 дні (днів) |
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2SD734E-AA | onsemi |
Description: NPN EPITAXIAL PLANAR SILICON TRA Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V Frequency - Transition: 250MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 600 mW |
на замовлення 307500 шт: термін постачання 21-31 дні (днів) |
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74LCX244MTCX-T | onsemi |
Description: IC REG LINEAR Packaging: Bulk Part Status: Obsolete |
товар відсутній |
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MUN2111T1 | onsemi |
Description: TRANS BRT PNP 100MA 50V SC59 Packaging: Bulk |
на замовлення 143230 шт: термін постачання 21-31 дні (днів) |
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MUN2111T3 | onsemi |
Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SMUN2111T1 | onsemi | Description: SMALL SIGNAL BIPOLAR TRANSISTOR |
товар відсутній |
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MCH6341-TL-E | onsemi | Description: MOSFET P-CH 30V 5A 6MCPH |
на замовлення 90332 шт: термін постачання 21-31 дні (днів) |
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MCH6341-TL-H | onsemi | Description: MOSFET P-CH 30V 5A 6MCPH |
на замовлення 608797 шт: термін постачання 21-31 дні (днів) |
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SGTB11N60R2DT4G | onsemi | Description: RC2 IGBT 10A 600V DPAK |
товар відсутній |
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CAT93C46BWI-GT3 | onsemi |
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 4 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 128 x 8, 64 x 16 DigiKey Programmable: Not Verified |
товар відсутній |
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NLU3G17BMX1TCG | onsemi | Description: IC BUF NON-INVERT 5.5V 8ULLGA |
на замовлення 16745 шт: термін постачання 21-31 дні (днів) |
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NLU3G17CMX1TCG | onsemi | Description: IC BUF NON-INVERT 5.5V 8ULLGA |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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NLU3G17MUTAG | onsemi | Description: IC BUFFER NON-INVERT 5.5V 8UDFN |
товар відсутній |
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NLU3G17MUTAG | onsemi | Description: IC BUFFER NON-INVERT 5.5V 8UDFN |
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NLU3G17MUTAG | onsemi | Description: IC BUFFER NON-INVERT 5.5V 8UDFN |
на замовлення 235758 шт: термін постачання 21-31 дні (днів) |
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NLX3G17BMX1TCG | onsemi | Description: IC BUF NON-INVERT 5.5V 8ULLGA |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NLX3G17CMX1TCG | onsemi | Description: IC BUF NON-INVERT 5.5V 8ULLGA |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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2N7002-F169 | onsemi |
Description: 2N7002 - TRANSISTOR Packaging: Bulk Part Status: Active |
товар відсутній |
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2SJ634-TL-E | onsemi | Description: 2SJ634 - PCH 4V DRIVE SERIES |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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MM5Z5V1T1 | onsemi | Description: DIODE ZENER 5.1V 200MW SOD523 |
на замовлення 290768 шт: термін постачання 21-31 дні (днів) |
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MMSZ5V1ET1G | onsemi | Description: DIODE ZENER |
на замовлення 15060 шт: термін постачання 21-31 дні (днів) |
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S1ZMMSZ5V1T1 | onsemi |
Description: DIODE ZENER REG 500MW SOD123 Packaging: Bulk Part Status: Active |
на замовлення 108000 шт: термін постачання 21-31 дні (днів) |
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SMM3Z5V1RT1G | onsemi | Description: DIODE ZENER 0.2W SOD323 |
на замовлення 624000 шт: термін постачання 21-31 дні (днів) |
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SMM5Z5V1RT1G | onsemi | Description: DIODE ZENER SOD523 |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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MM5Z5V1T5G | onsemi |
Description: DIODE ZENER 5.1V 500MW SOD523 Packaging: Tape & Reel (TR) Tolerance: ±5.88% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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MM5Z5V1T5G | onsemi |
Description: DIODE ZENER 5.1V 500MW SOD523 Packaging: Cut Tape (CT) Tolerance: ±5.88% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V |
на замовлення 10793 шт: термін постачання 21-31 дні (днів) |
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MC74HC393AF | onsemi |
Description: IC BINARY COUNTR DL 4BIT 14SOIC Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -55°C ~ 125°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 14-SOIC Part Status: Active Voltage - Supply: 2 V ~ 6 V Count Rate: 50 MHz Number of Bits per Element: 4 |
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MC74HC393AFL1 | onsemi |
Description: IC BINARY COUNTR DL 4BIT 14SOIC Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -55°C ~ 125°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 14-SOIC Part Status: Active Voltage - Supply: 2 V ~ 6 V Count Rate: 50 MHz Number of Bits per Element: 4 |
товар відсутній |
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R3710-CEAA-E1T | onsemi | Description: IC DSP AUDIOLOGY IIC 16SIP |
товар відсутній |
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MMBD1403ALT1G | onsemi |
Description: DIODE ARRAY GP 250V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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SD05T1 | onsemi | Description: TVS DIODE 5VWM 9.8VC SOD323 |
на замовлення 220581 шт: термін постачання 21-31 дні (днів) |
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CAS93C66VP2I-GT3 | onsemi |
Description: IC EEPROM MICROWIRE 4KB Packaging: Bulk Part Status: Active Memory Interface: Microwire DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BSS84-F169 | onsemi | Description: MOSFET |
товар відсутній |
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BSS84-H | onsemi |
Description: MOSFET P-CH 50V 130MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V |
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CAT24C256XE-T2 | onsemi |
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 500 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товар відсутній |
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FDY300NZ | onsemi | Description: MOSFET N-CH 20V 600MA SC89-3 |
товар відсутній |
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FCPF260N60E-F154 | onsemi |
Description: MOSFET N-CH 600V 15A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tj) Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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1SV233-TB-E | onsemi | Description: RF DIODE PIN 50V 150MW 3CP |
на замовлення 93000 шт: термін постачання 21-31 дні (днів) |
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1SV234-TB-E | onsemi | Description: RF DIODE PIN 50V 150MW CP |
на замовлення 136080 шт: термін постачання 21-31 дні (днів) |
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1SV251-TB-E | onsemi | Description: RF DIODE PIN 50V 150MW 3CP |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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CAT24C01WI-GT3 | onsemi | Description: IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
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NCP5217AMNTXG | onsemi | Description: IC REG CTRLR BUCK 14-QFN |
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NB3N51054DTR2G | onsemi |
Description: IC CLK GEN HCSL/LVDS 24-TSSOP Packaging: Bulk Package / Case: 24-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: HCSL, LVDS Frequency - Max: 100MHz Input: Clock, Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:4 Differential - Input:Output: No/Yes Supplier Device Package: 24-TSSOP PLL: Yes Divider/Multiplier: Yes/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 92600 шт: термін постачання 21-31 дні (днів) |
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BAW56M3T5G | onsemi |
Description: DIODE ARRAY GP 75V 200MA SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-723 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
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BAW56M3T5G | onsemi |
Description: DIODE ARRAY GP 75V 200MA SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-723 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
на замовлення 5100 шт: термін постачання 21-31 дні (днів) |
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LMV321SN3T21G | onsemi |
Description: IC CMOS 1 CIRCUIT 5TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C (TA) Current - Supply: 130µA Slew Rate: 1V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 1 nA Voltage - Input Offset: 1.7 mV Supplier Device Package: 5-TSOP Part Status: Active Number of Circuits: 1 Current - Output / Channel: 160 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
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NVMFS5C404NAFT3G | onsemi |
Description: MOSFET N-CH 40V 53A/378A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V |
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NVMFS5C404NWFAFT3G | onsemi |
Description: MOSFET N-CH 40V 53A/378A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V |
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LA5795T-TLM-E | onsemi |
Description: IC SUPERVISOR TUNER PWR SUP ICS Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 298000 шт: термін постачання 21-31 дні (днів) |
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LA7795T-TLM-E | onsemi |
Description: ANALOG CIRCUIT Packaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Type: Amplifier Supplier Device Package: 8-MSOP |
на замовлення 282000 шт: термін постачання 21-31 дні (днів) |
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FFLMC74HC4067ADTR2G | onsemi |
Description: IC REG LINEAR Packaging: Bulk Part Status: Obsolete |
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FFLMC74HC4067ADWR2G | onsemi |
Description: IC REG LINEAR Packaging: Bulk Part Status: Obsolete |
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STK672-432AN-E | onsemi |
Description: UNIPOLAR 2-PHASE MICRO STEPPER M Packaging: Bulk Part Status: Active |
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STK672-541 | onsemi |
Description: IC MOTOR DRIVER Packaging: Bulk Part Status: Obsolete |
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VEC2303-TL-E | onsemi | Description: PCH+PCH 1.8V DRIVE SERIES |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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BAS16-D87Z | onsemi |
Description: BAS16 - SWITCHING DIODE, 85 V 20 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 621000 шт: термін постачання 21-31 дні (днів) |
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NVMTS0D7N04CLTXG |
Виробник: onsemi
Description: AFSM T6 40V LL NCH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc)
Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: AFSM T6 40V LL NCH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc)
Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 383.55 грн |
NVMTS0D7N04CLTXG |
Виробник: onsemi
Description: AFSM T6 40V LL NCH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc)
Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: AFSM T6 40V LL NCH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc)
Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3050 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 721.96 грн |
10+ | 595.64 грн |
100+ | 496.36 грн |
500+ | 411.01 грн |
1000+ | 369.91 грн |
MC74VHCT132AD |
Виробник: onsemi
Description: IC GATE NAND
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.35V ~ 0.6V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.35V ~ 0.6V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 25513 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4438+ | 4.56 грн |
MC74VHCT132ADT |
на замовлення 4240 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1902+ | 11.4 грн |
2SD734E |
Виробник: onsemi
Description: 2SD734 - NPN EPITAXIAL PLANAR SI
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Description: 2SD734 - NPN EPITAXIAL PLANAR SI
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
на замовлення 30260 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1025+ | 19.09 грн |
2SD734E-AA |
Виробник: onsemi
Description: NPN EPITAXIAL PLANAR SILICON TRA
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Description: NPN EPITAXIAL PLANAR SILICON TRA
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
на замовлення 307500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1025+ | 19.09 грн |
74LCX244MTCX-T |
товар відсутній
MUN2111T1 |
на замовлення 143230 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 1.95 грн |
MUN2111T3 |
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6662+ | 3.25 грн |
MCH6341-TL-E |
Виробник: onsemi
Description: MOSFET P-CH 30V 5A 6MCPH
Description: MOSFET P-CH 30V 5A 6MCPH
на замовлення 90332 шт:
термін постачання 21-31 дні (днів)MCH6341-TL-H |
Виробник: onsemi
Description: MOSFET P-CH 30V 5A 6MCPH
Description: MOSFET P-CH 30V 5A 6MCPH
на замовлення 608797 шт:
термін постачання 21-31 дні (днів)CAT93C46BWI-GT3 |
Виробник: onsemi
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
товар відсутній
NLU3G17BMX1TCG |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 8ULLGA
Description: IC BUF NON-INVERT 5.5V 8ULLGA
на замовлення 16745 шт:
термін постачання 21-31 дні (днів)NLU3G17CMX1TCG |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 8ULLGA
Description: IC BUF NON-INVERT 5.5V 8ULLGA
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)NLU3G17MUTAG |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V 8UDFN
Description: IC BUFFER NON-INVERT 5.5V 8UDFN
на замовлення 235758 шт:
термін постачання 21-31 дні (днів)NLX3G17BMX1TCG |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 8ULLGA
Description: IC BUF NON-INVERT 5.5V 8ULLGA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)NLX3G17CMX1TCG |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 8ULLGA
Description: IC BUF NON-INVERT 5.5V 8ULLGA
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)2N7002-F169 |
товар відсутній
2SJ634-TL-E |
Виробник: onsemi
Description: 2SJ634 - PCH 4V DRIVE SERIES
Description: 2SJ634 - PCH 4V DRIVE SERIES
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
425+ | 51.08 грн |
MM5Z5V1T1 |
Виробник: onsemi
Description: DIODE ZENER 5.1V 200MW SOD523
Description: DIODE ZENER 5.1V 200MW SOD523
на замовлення 290768 шт:
термін постачання 21-31 дні (днів)MMSZ5V1ET1G |
Виробник: onsemi
Description: DIODE ZENER
Description: DIODE ZENER
на замовлення 15060 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15060+ | 1.37 грн |
S1ZMMSZ5V1T1 |
на замовлення 108000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 1.96 грн |
SMM3Z5V1RT1G |
Виробник: onsemi
Description: DIODE ZENER 0.2W SOD323
Description: DIODE ZENER 0.2W SOD323
на замовлення 624000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15000+ | 1.34 грн |
SMM5Z5V1RT1G |
Виробник: onsemi
Description: DIODE ZENER SOD523
Description: DIODE ZENER SOD523
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)MM5Z5V1T5G |
Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Description: DIODE ZENER 5.1V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 2.49 грн |
MM5Z5V1T5G |
Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Description: DIODE ZENER 5.1V 500MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
на замовлення 10793 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 16.39 грн |
22+ | 12.9 грн |
100+ | 6.84 грн |
500+ | 4.22 грн |
1000+ | 2.87 грн |
2000+ | 2.59 грн |
MC74HC393AF |
Виробник: onsemi
Description: IC BINARY COUNTR DL 4BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Count Rate: 50 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTR DL 4BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Count Rate: 50 MHz
Number of Bits per Element: 4
товар відсутній
MC74HC393AFL1 |
Виробник: onsemi
Description: IC BINARY COUNTR DL 4BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Count Rate: 50 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTR DL 4BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Count Rate: 50 MHz
Number of Bits per Element: 4
товар відсутній
MMBD1403ALT1G |
Виробник: onsemi
Description: DIODE ARRAY GP 250V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Description: DIODE ARRAY GP 250V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.33 грн |
6000+ | 3.87 грн |
9000+ | 3.21 грн |
30000+ | 2.96 грн |
SD05T1 |
Виробник: onsemi
Description: TVS DIODE 5VWM 9.8VC SOD323
Description: TVS DIODE 5VWM 9.8VC SOD323
на замовлення 220581 шт:
термін постачання 21-31 дні (днів)CAS93C66VP2I-GT3 |
Виробник: onsemi
Description: IC EEPROM MICROWIRE 4KB
Packaging: Bulk
Part Status: Active
Memory Interface: Microwire
DigiKey Programmable: Not Verified
Description: IC EEPROM MICROWIRE 4KB
Packaging: Bulk
Part Status: Active
Memory Interface: Microwire
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1276+ | 15.63 грн |
BSS84-H |
Виробник: onsemi
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
товар відсутній
CAT24C256XE-T2 |
Виробник: onsemi
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товар відсутній
FCPF260N60E-F154 |
Виробник: onsemi
Description: MOSFET N-CH 600V 15A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 600V 15A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
1SV233-TB-E |
Виробник: onsemi
Description: RF DIODE PIN 50V 150MW 3CP
Description: RF DIODE PIN 50V 150MW 3CP
на замовлення 93000 шт:
термін постачання 21-31 дні (днів)1SV234-TB-E |
Виробник: onsemi
Description: RF DIODE PIN 50V 150MW CP
Description: RF DIODE PIN 50V 150MW CP
на замовлення 136080 шт:
термін постачання 21-31 дні (днів)1SV251-TB-E |
Виробник: onsemi
Description: RF DIODE PIN 50V 150MW 3CP
Description: RF DIODE PIN 50V 150MW 3CP
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)NB3N51054DTR2G |
Виробник: onsemi
Description: IC CLK GEN HCSL/LVDS 24-TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL, LVDS
Frequency - Max: 100MHz
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/Yes
Supplier Device Package: 24-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLK GEN HCSL/LVDS 24-TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL, LVDS
Frequency - Max: 100MHz
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/Yes
Supplier Device Package: 24-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 92600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
110+ | 195.99 грн |
BAW56M3T5G |
Виробник: onsemi
Description: DIODE ARRAY GP 75V 200MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Description: DIODE ARRAY GP 75V 200MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
товар відсутній
BAW56M3T5G |
Виробник: onsemi
Description: DIODE ARRAY GP 75V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Description: DIODE ARRAY GP 75V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
на замовлення 5100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.38 грн |
19+ | 14.48 грн |
100+ | 7.04 грн |
500+ | 5.51 грн |
1000+ | 3.83 грн |
2000+ | 3.32 грн |
LMV321SN3T21G |
Виробник: onsemi
Description: IC CMOS 1 CIRCUIT 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 130µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 5-TSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC CMOS 1 CIRCUIT 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 130µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 5-TSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
товар відсутній
NVMFS5C404NAFT3G |
Виробник: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
товар відсутній
NVMFS5C404NWFAFT3G |
Виробник: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
товар відсутній
LA5795T-TLM-E |
Виробник: onsemi
Description: IC SUPERVISOR TUNER PWR SUP ICS
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR TUNER PWR SUP ICS
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 298000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1268+ | 15.59 грн |
LA7795T-TLM-E |
Виробник: onsemi
Description: ANALOG CIRCUIT
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Amplifier
Supplier Device Package: 8-MSOP
Description: ANALOG CIRCUIT
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Amplifier
Supplier Device Package: 8-MSOP
на замовлення 282000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1158+ | 17.58 грн |
FFLMC74HC4067ADTR2G |
товар відсутній
FFLMC74HC4067ADWR2G |
товар відсутній
STK672-432AN-E |
товар відсутній
STK672-541 |
товар відсутній
VEC2303-TL-E |
Виробник: onsemi
Description: PCH+PCH 1.8V DRIVE SERIES
Description: PCH+PCH 1.8V DRIVE SERIES
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1312+ | 15.58 грн |
BAS16-D87Z |
Виробник: onsemi
Description: BAS16 - SWITCHING DIODE, 85 V 20
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: BAS16 - SWITCHING DIODE, 85 V 20
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 621000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4438+ | 4.61 грн |