Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MBR2515LG | onsemi |
Description: DIODE SCHOTTKY 15V 25A TO220-2 Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 25A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 25 A Current - Reverse Leakage @ Vr: 15 mA @ 15 V |
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FDS6900AS-G | onsemi |
Description: MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA Supplier Device Package: 8-SOIC |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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1N5263B-T50R | onsemi | Description: DIODE ZENER 56V 500MW DO35 |
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1N5263B-T50R | onsemi | Description: DIODE ZENER 56V 500MW DO35 |
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AR0234CSSC28SUKAH3-GEVB | onsemi |
Description: 2MP 1/3 CIS 28 DEG CSP83 RGB DEM Packaging: Box Sensitivity: 120fps Interface: 2-Wire Serial Sensor Type: Thermal Imaging Utilized IC / Part: AR0234CS Supplied Contents: Board(s) Embedded: No Sensing Range: 2.3Megapixel Part Status: Active |
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CAT4237TDT-MP | onsemi | Description: LED DR BOOST 8 LED SERIES |
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CAT3614HV2-T2 | onsemi | Description: IC LED DRVR WHITE BCKLGT 12-TDFN |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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CAT3614HV2G-T2 | onsemi |
Description: IC LED DRVR RGLTR SGL WR 12TDFN Packaging: Bulk Package / Case: 12-WFDFN Exposed Pad Voltage - Output: 7V Mounting Type: Surface Mount Number of Outputs: 4 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight, Camera Flash Current - Output / Channel: 31mA Internal Switch(s): No Topology: Switched Capacitor (Charge Pump) Supplier Device Package: 12-TDFN (3x3) Dimming: Single-Wire Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Obsolete |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2SC4710LS | onsemi |
Description: 2SC4710LS - POWER BIPOLAR TRANSI Packaging: Bulk |
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2SK3495 | onsemi |
Description: N-CHANNEL SMALL SIGNAL MOSFET Packaging: Bulk Part Status: Active |
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P6SMB47AT3G | onsemi | Description: TVS DIODE 40.2VWM 64.8VC SMB |
на замовлення 10899 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C628NT1G | onsemi |
Description: MOSFET N-CH 60V 28A/150A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 135µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V |
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NCP337FCT2G | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP Features: Load Discharge, Slew Rate Controlled Packaging: Bulk Package / Case: 6-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 20Ohm Input Type: Non-Inverting Voltage - Load: 1.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: 6-WLCSP (1.0x1.5) Part Status: Active |
на замовлення 13358 шт: термін постачання 21-31 дні (днів) |
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NCP367OPMUEOTBG | onsemi |
Description: IC VOLT PROTECTION OCP OVP 8DFN Packaging: Bulk Package / Case: 8-VFDFN Exposed Pad Mounting Type: Surface Mount Voltage - Input: 1.2V ~ 28V Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.2V ~ 28V Applications: Overvoltage Protection Controller, Current Limit Supplier Device Package: 8-DFN (2x2.2) Part Status: Active Current - Supply: 42 µA |
на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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FDMF5821 | onsemi |
Description: 2MHZ SMART POWER STAGE (SPS) Features: Bootstrap Circuit, Latch Function, Status Flag Packaging: Tape & Reel (TR) Package / Case: 31-PowerWFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 470mOhm LS, 680mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 60A Technology: UMOS Voltage - Load: 4.5V ~ 16V Supplier Device Package: 31-PQFN (5x5) Fault Protection: Over Temperature, UVLO Load Type: Inductive Part Status: Active |
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FDD3860-G | onsemi | Description: 100V N-CHANNEL POWERTRENCH MOSFE |
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NVMTS1D2N08H | onsemi |
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V Power Dissipation (Max): 5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
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NVMTS1D2N08H | onsemi |
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V Power Dissipation (Max): 5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: 8-DFNW (8.3x8.4) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V Qualification: AEC-Q101 |
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FDWS9508L_F085 | onsemi | Description: MOSFET P-CH 40V 80A 8PQFN |
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NUP5120X6T2G | onsemi | Description: TVS DIODE 5VWM SOT563 |
на замовлення 52185 шт: термін постачання 21-31 дні (днів) |
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BAS116LT3G | onsemi |
Description: DIODE GEN PURP 75V 200MA SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
на замовлення 444004 шт: термін постачання 21-31 дні (днів) |
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SE81NLV74HC14ADTR2G | onsemi |
Description: 74HC14 - HEX SCHMITT-TRIGGER INV Features: Schmitt Trigger Packaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.9V ~ 2.6V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Part Status: Obsolete Number of Circuits: 6 Current - Quiescent (Max): 1 µA |
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N57M5114WD50TG | onsemi | Description: IC DGTL POT 50KOHM 32TAP 8SOIC |
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N57M5114WD10TG | onsemi | Description: IC DGTL POT 10KOHM 32TAP 8SOIC |
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NXH50C120L2C2ESG | onsemi | Description: IGBT MODULE, CIB 1200 V, 50 A IG |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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L5431-AA-E | onsemi | Description: L5431-AA-E |
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DVK-SFUS-API-1-GEVK | onsemi | Description: EVAL BOARD SIGFOX AX-SFUS-API |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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DVK-SFEU-API-1-GEVK | onsemi | Description: EVAL BOARD SIGFOX AX-SFEU-API |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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FDS3512 | onsemi |
Description: MOSFET N-CH 80V 4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V |
на замовлення 4594 шт: термін постачання 21-31 дні (днів) |
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MC74VHC1G14DBVT1G | onsemi | Description: IC INVERT SCHMITT 1CH 1-IN SC74A |
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MC74VHC1G14DBVT1G | onsemi | Description: IC INVERT SCHMITT 1CH 1-IN SC74A |
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MC74VHC1G14DBVT1G | onsemi | Description: IC INVERT SCHMITT 1CH 1-IN SC74A |
на замовлення 533780 шт: термін постачання 21-31 дні (днів) |
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MC74VHC1G14MU2TCG | onsemi | Description: IC INVERT SCHMITT |
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SLJ74VHC1G14DFT2G | onsemi |
Description: IC REG LINEAR Packaging: Bulk Part Status: Obsolete |
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RB751S40P2T5G | onsemi |
Description: DIODE SCHOTTKY 30V 30MA SOD923 Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8 ns Technology: Schottky Capacitance @ Vr, F: 2pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 500 nA @ 30 V |
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LB1960M-TLM-H | onsemi |
Description: OPTICAL SENSOR AMBIENT 540NM I2C Packaging: Bulk Part Status: Active |
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FW297-TL-2W | onsemi | Description: MOSFET 2N-CH 60V 4.5A 8SOIC |
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FW297-TL-2W | onsemi | Description: MOSFET 2N-CH 60V 4.5A 8SOIC |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
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NCP1230P65G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.7V ~ 18V Supplier Device Package: 7-PDIP Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12.6 V Part Status: Obsolete |
на замовлення 36005 шт: термін постачання 21-31 дні (днів) |
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MJ11021G | onsemi |
Description: TRANS PNP DARL 250V 15A TO204 Packaging: Tray Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V Supplier Device Package: TO-204 (TO-3) Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 175 W |
на замовлення 277 шт: термін постачання 21-31 дні (днів) |
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EFC4615R-TR | onsemi |
Description: MOSFET N-CH 24V 6A EFCP Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, FCBGA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: EFCP1515-4CC-037 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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EFC4615R-TR | onsemi |
Description: MOSFET N-CH 24V 6A EFCP Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, FCBGA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: EFCP1515-4CC-037 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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CAS25160LI-G-DF | onsemi |
Description: CAS25160 - 16KB SPI SER CMOS EEP Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 188900 шт: термін постачання 21-31 дні (днів) |
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SVC251SPA-AC | onsemi |
Description: VARIABLE-CAPACITANCE DIODE Packaging: Bulk Package / Case: 2-SIP Mounting Type: Through Hole Diode Type: Single Operating Temperature: 100°C (TJ) Capacitance @ Vr, F: 38pF @ 1.6V, 1MHz Capacitance Ratio Condition: C1.6/C5 Supplier Device Package: 2-SPA Voltage - Peak Reverse (Max): 12 V Capacitance Ratio: 1.7 |
на замовлення 233571 шт: термін постачання 21-31 дні (днів) |
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SVC233-TB-E-ON | onsemi |
Description: VARIABLE-CAPACITANCE DIODE (IOCA Packaging: Bulk |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MM74HCT573MTCX | onsemi |
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 7.2mA, 7.2mA Delay Time - Propagation: 17ns Supplier Device Package: 20-TSSOP Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MM74HCT573MTCX | onsemi |
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 7.2mA, 7.2mA Delay Time - Propagation: 17ns Supplier Device Package: 20-TSSOP Part Status: Active |
на замовлення 5011 шт: термін постачання 21-31 дні (днів) |
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FDT3612-SN00151 | onsemi | Description: MOSFET N-CH 100V SOT223 |
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SCH1332-TL-W | onsemi | Description: MOSFET P-CH 20V 2.5A SOT563/SCH6 |
на замовлення 4638 шт: термін постачання 21-31 дні (днів) |
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LV8081GQ-TE-L-E | onsemi |
Description: TWO CHANNELS CONSTANT-CURRENT H- Packaging: Bulk Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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LV56081GP-TE-L-E | onsemi | Description: IC REG CHRG PUMP -5.5V/15V 24VCT |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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2N5302G | onsemi |
Description: TRANS NPN 60V 30A TO204 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Frequency - Transition: 2MHz Supplier Device Package: TO-204 (TO-3) Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 200 W |
на замовлення 2153 шт: термін постачання 21-31 дні (днів) |
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MMSZ5237ET1G | onsemi | Description: DIODE ZENER 8.2V 500MW SOD123 |
на замовлення 10263 шт: термін постачання 21-31 дні (днів) |
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SZMMSZ5245CT1G | onsemi | Description: ZENER DIODE 500 MW SOD-123 |
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NVBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE N-CHANNEL Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 479µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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NVBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE N-CHANNEL Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 479µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 9932 шт: термін постачання 21-31 дні (днів) |
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NTBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNE Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 479µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NTBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNE Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 479µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDBL86566-F085 | onsemi |
Description: N-CHANNEL POWERTRENCH MOSFET, 60 Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V |
товар відсутній |
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NVBLS1D1N08H | onsemi |
Description: MOSFET N-CH 80V 41A/351A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 4.2W (Ta), 311W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V Qualification: AEC-Q101 |
товар відсутній |
MBR2515LG |
Виробник: onsemi
Description: DIODE SCHOTTKY 15V 25A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 25 A
Current - Reverse Leakage @ Vr: 15 mA @ 15 V
Description: DIODE SCHOTTKY 15V 25A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 25 A
Current - Reverse Leakage @ Vr: 15 mA @ 15 V
товар відсутній
FDS6900AS-G |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Supplier Device Package: 8-SOIC
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
468+ | 77.08 грн |
AR0234CSSC28SUKAH3-GEVB |
Виробник: onsemi
Description: 2MP 1/3 CIS 28 DEG CSP83 RGB DEM
Packaging: Box
Sensitivity: 120fps
Interface: 2-Wire Serial
Sensor Type: Thermal Imaging
Utilized IC / Part: AR0234CS
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 2.3Megapixel
Part Status: Active
Description: 2MP 1/3 CIS 28 DEG CSP83 RGB DEM
Packaging: Box
Sensitivity: 120fps
Interface: 2-Wire Serial
Sensor Type: Thermal Imaging
Utilized IC / Part: AR0234CS
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 2.3Megapixel
Part Status: Active
товар відсутній
CAT3614HV2-T2 |
Виробник: onsemi
Description: IC LED DRVR WHITE BCKLGT 12-TDFN
Description: IC LED DRVR WHITE BCKLGT 12-TDFN
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
298+ | 73.8 грн |
CAT3614HV2G-T2 |
Виробник: onsemi
Description: IC LED DRVR RGLTR SGL WR 12TDFN
Packaging: Bulk
Package / Case: 12-WFDFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight, Camera Flash
Current - Output / Channel: 31mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 12-TDFN (3x3)
Dimming: Single-Wire
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Description: IC LED DRVR RGLTR SGL WR 12TDFN
Packaging: Bulk
Package / Case: 12-WFDFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight, Camera Flash
Current - Output / Channel: 31mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 12-TDFN (3x3)
Dimming: Single-Wire
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
544+ | 36.21 грн |
2SC4710LS |
товар відсутній
2SK3495 |
товар відсутній
P6SMB47AT3G |
Виробник: onsemi
Description: TVS DIODE 40.2VWM 64.8VC SMB
Description: TVS DIODE 40.2VWM 64.8VC SMB
на замовлення 10899 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1312+ | 16.72 грн |
NTMFS5C628NT1G |
Виробник: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
товар відсутній
NCP337FCT2G |
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Bulk
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20Ohm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.0x1.5)
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Bulk
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20Ohm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.0x1.5)
Part Status: Active
на замовлення 13358 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
858+ | 23.58 грн |
NCP367OPMUEOTBG |
Виробник: onsemi
Description: IC VOLT PROTECTION OCP OVP 8DFN
Packaging: Bulk
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: 1.2V ~ 28V
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 28V
Applications: Overvoltage Protection Controller, Current Limit
Supplier Device Package: 8-DFN (2x2.2)
Part Status: Active
Current - Supply: 42 µA
Description: IC VOLT PROTECTION OCP OVP 8DFN
Packaging: Bulk
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: 1.2V ~ 28V
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 28V
Applications: Overvoltage Protection Controller, Current Limit
Supplier Device Package: 8-DFN (2x2.2)
Part Status: Active
Current - Supply: 42 µA
на замовлення 11000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
814+ | 24.93 грн |
FDMF5821 |
Виробник: onsemi
Description: 2MHZ SMART POWER STAGE (SPS)
Features: Bootstrap Circuit, Latch Function, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 470mOhm LS, 680mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: UMOS
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
Part Status: Active
Description: 2MHZ SMART POWER STAGE (SPS)
Features: Bootstrap Circuit, Latch Function, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 470mOhm LS, 680mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: UMOS
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Over Temperature, UVLO
Load Type: Inductive
Part Status: Active
товар відсутній
NVMTS1D2N08H |
Виробник: onsemi
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
NVMTS1D2N08H |
Виробник: onsemi
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
NUP5120X6T2G |
Виробник: onsemi
Description: TVS DIODE 5VWM SOT563
Description: TVS DIODE 5VWM SOT563
на замовлення 52185 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4957+ | 4.5 грн |
BAS116LT3G |
Виробник: onsemi
Description: DIODE GEN PURP 75V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Description: DIODE GEN PURP 75V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
на замовлення 444004 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9072+ | 1.97 грн |
SE81NLV74HC14ADTR2G |
Виробник: onsemi
Description: 74HC14 - HEX SCHMITT-TRIGGER INV
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.9V ~ 2.6V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Description: 74HC14 - HEX SCHMITT-TRIGGER INV
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.9V ~ 2.6V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
товар відсутній
NXH50C120L2C2ESG |
Виробник: onsemi
Description: IGBT MODULE, CIB 1200 V, 50 A IG
Description: IGBT MODULE, CIB 1200 V, 50 A IG
на замовлення 32 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 5511.5 грн |
10+ | 5033.64 грн |
DVK-SFUS-API-1-GEVK |
Виробник: onsemi
Description: EVAL BOARD SIGFOX AX-SFUS-API
Description: EVAL BOARD SIGFOX AX-SFUS-API
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 27027.3 грн |
DVK-SFEU-API-1-GEVK |
Виробник: onsemi
Description: EVAL BOARD SIGFOX AX-SFEU-API
Description: EVAL BOARD SIGFOX AX-SFEU-API
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 19507.43 грн |
FDS3512 |
Виробник: onsemi
Description: MOSFET N-CH 80V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
Description: MOSFET N-CH 80V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
на замовлення 4594 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 196.66 грн |
10+ | 170.37 грн |
100+ | 136.96 грн |
500+ | 105.6 грн |
1000+ | 87.5 грн |
MC74VHC1G14DBVT1G |
Виробник: onsemi
Description: IC INVERT SCHMITT 1CH 1-IN SC74A
Description: IC INVERT SCHMITT 1CH 1-IN SC74A
на замовлення 533780 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10764+ | 2.19 грн |
SLJ74VHC1G14DFT2G |
товар відсутній
RB751S40P2T5G |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Description: DIODE SCHOTTKY 30V 30MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
товар відсутній
LB1960M-TLM-H |
товар відсутній
FW297-TL-2W |
Виробник: onsemi
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)NCP1230P65G |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.7V ~ 18V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12.6 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.7V ~ 18V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12.6 V
Part Status: Obsolete
на замовлення 36005 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
293+ | 123.18 грн |
MJ11021G |
Виробник: onsemi
Description: TRANS PNP DARL 250V 15A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 175 W
Description: TRANS PNP DARL 250V 15A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 175 W
на замовлення 277 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 650.49 грн |
10+ | 536.63 грн |
25+ | 499.81 грн |
100+ | 419.68 грн |
EFC4615R-TR |
Виробник: onsemi
Description: MOSFET N-CH 24V 6A EFCP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: EFCP1515-4CC-037
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Description: MOSFET N-CH 24V 6A EFCP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: EFCP1515-4CC-037
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 9.67 грн |
EFC4615R-TR |
Виробник: onsemi
Description: MOSFET N-CH 24V 6A EFCP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: EFCP1515-4CC-037
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Description: MOSFET N-CH 24V 6A EFCP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: EFCP1515-4CC-037
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.26 грн |
12+ | 24.9 грн |
100+ | 17.3 грн |
500+ | 12.67 грн |
1000+ | 10.3 грн |
2000+ | 9.21 грн |
CAS25160LI-G-DF |
Виробник: onsemi
Description: CAS25160 - 16KB SPI SER CMOS EEP
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: CAS25160 - 16KB SPI SER CMOS EEP
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 188900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
666+ | 29.66 грн |
SVC251SPA-AC |
Виробник: onsemi
Description: VARIABLE-CAPACITANCE DIODE
Packaging: Bulk
Package / Case: 2-SIP
Mounting Type: Through Hole
Diode Type: Single
Operating Temperature: 100°C (TJ)
Capacitance @ Vr, F: 38pF @ 1.6V, 1MHz
Capacitance Ratio Condition: C1.6/C5
Supplier Device Package: 2-SPA
Voltage - Peak Reverse (Max): 12 V
Capacitance Ratio: 1.7
Description: VARIABLE-CAPACITANCE DIODE
Packaging: Bulk
Package / Case: 2-SIP
Mounting Type: Through Hole
Diode Type: Single
Operating Temperature: 100°C (TJ)
Capacitance @ Vr, F: 38pF @ 1.6V, 1MHz
Capacitance Ratio Condition: C1.6/C5
Supplier Device Package: 2-SPA
Voltage - Peak Reverse (Max): 12 V
Capacitance Ratio: 1.7
на замовлення 233571 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2959+ | 6.65 грн |
SVC233-TB-E-ON |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
683+ | 29.27 грн |
MM74HCT573MTCX |
Виробник: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 17.26 грн |
MM74HCT573MTCX |
Виробник: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
на замовлення 5011 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 47.54 грн |
10+ | 40.58 грн |
25+ | 38.18 грн |
100+ | 27.15 грн |
250+ | 23.11 грн |
500+ | 21.95 грн |
1000+ | 16.48 грн |
SCH1332-TL-W |
Виробник: onsemi
Description: MOSFET P-CH 20V 2.5A SOT563/SCH6
Description: MOSFET P-CH 20V 2.5A SOT563/SCH6
на замовлення 4638 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
197+ | 11.88 грн |
LV8081GQ-TE-L-E |
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
902+ | 23.77 грн |
LV56081GP-TE-L-E |
Виробник: onsemi
Description: IC REG CHRG PUMP -5.5V/15V 24VCT
Description: IC REG CHRG PUMP -5.5V/15V 24VCT
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
128+ | 153.73 грн |
2N5302G |
Виробник: onsemi
Description: TRANS NPN 60V 30A TO204
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 W
Description: TRANS NPN 60V 30A TO204
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 W
на замовлення 2153 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
67+ | 300.66 грн |
MMSZ5237ET1G |
Виробник: onsemi
Description: DIODE ZENER 8.2V 500MW SOD123
Description: DIODE ZENER 8.2V 500MW SOD123
на замовлення 10263 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4199+ | 4.61 грн |
NVBLS1D7N08H |
Виробник: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 153.55 грн |
NVBLS1D7N08H |
Виробник: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
на замовлення 9932 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 315.52 грн |
10+ | 255 грн |
100+ | 206.32 грн |
500+ | 172.11 грн |
1000+ | 147.37 грн |
NTBLS1D7N08H |
Виробник: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 164.6 грн |
NTBLS1D7N08H |
Виробник: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 337.85 грн |
10+ | 273.38 грн |
100+ | 221.17 грн |
500+ | 184.49 грн |
1000+ | 157.97 грн |
FDBL86566-F085 |
Виробник: onsemi
Description: N-CHANNEL POWERTRENCH MOSFET, 60
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
Description: N-CHANNEL POWERTRENCH MOSFET, 60
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
товар відсутній
NVBLS1D1N08H |
Виробник: onsemi
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
товар відсутній