| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STK621-728-E | onsemi |
Description: IC HALF BRIDGE DRIVER 10A 21SIP Features: Auto Restart, Bootstrap Circuit, Status Flag Packaging: Tube Package / Case: 29-SSIP Module, 21 Leads, Formed Leads Mounting Type: Through Hole Interface: Logic Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 12.5V ~ 17.5V Applications: AC Motors Current - Output / Channel: 10A Current - Peak Output: 20A Technology: IGBT Voltage - Load: 400V (Max) Supplier Device Package: 21-SIP Fault Protection: Current Limiting, UVLO Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STK621-068F-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STK621-033C-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STK621-033D-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Bulk Part Status: Obsolete |
на замовлення 6130 шт: термін постачання 21-31 дні (днів) |
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| STK621-051F-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STK621-043D-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STK621-014-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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| STK621-728SG-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STK621-742-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STK621-712-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STK621-729-E | onsemi | Description: IC MOTOR DRIVER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STK621-051D-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STK621-713-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STK621-141A-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STK621-043C-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STK621-068S-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tray Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STK621-521-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STK621-520A-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STK621-068R-E | onsemi |
Description: IC MOTOR DRIVER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MBRF30H100CTH | onsemi |
Description: DIODE ARR SCHOTT 100V TO220 FP Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220-3 FULLPACK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NVLJWS022N06CLTAG | onsemi |
Description: T6 60V LL 2X2 WDFNW6Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 77µA Supplier Device Package: 6-WDFNW (2.05x2.05) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NVMJD012N06CLTWG | onsemi |
Description: MOSFET 2N-CH 60V 11.5A 8LFPAKPart Status: Active Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 3.2W (Ta), 42W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
| 2SC4080D-TD-E | onsemi |
Description: 2SC4080 - NPN EPITAXIAL PLANAR S |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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FDS86252 | onsemi |
Description: MOSFET N-CH 150V 4.5A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FDS86252 | onsemi |
Description: MOSFET N-CH 150V 4.5A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V |
на замовлення 544 шт: термін постачання 21-31 дні (днів) |
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NTHD2110TT1G | onsemi |
Description: MOSFET P-CH 12V 4.5A CHIPFETInput Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Obsolete Supplier Device Package: ChipFET™ Vgs(th) (Max) @ Id: 850mV @ 250µA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDA16N50-F109 | onsemi |
Description: MOSFET N-CH 500V 16.5A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V |
на замовлення 301 шт: термін постачання 21-31 дні (днів) |
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SZBZX84B10LT1G | onsemi |
Description: DIODE ZENER 10V 250MW SOT23-3Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 7 V Qualification: AEC-Q101 |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84B10LT1G | onsemi |
Description: DIODE ZENER 10V 250MW SOT23-3Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 7 V Qualification: AEC-Q101 |
на замовлення 92914 шт: термін постачання 21-31 дні (днів) |
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NCP12711ADNR2G | onsemi |
Description: 4-45 V INPUT CURRENT MODE ISOLATPackaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 100kHz ~ 1MHz Topology: Flyback, Forward Converter Voltage - Supply (Vcc/Vdd): 4V ~ 45V Supplier Device Package: 10-MSOP Synchronous Rectifier: Yes Control Features: Frequency Control, Soft Start Output Phases: 1 Duty Cycle (Max): 94% Clock Sync: No Part Status: Active Number of Outputs: 1 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCP12711ADNR2G | onsemi |
Description: 4-45 V INPUT CURRENT MODE ISOLATPackaging: Cut Tape (CT) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 100kHz ~ 1MHz Topology: Flyback, Forward Converter Voltage - Supply (Vcc/Vdd): 4V ~ 45V Supplier Device Package: 10-MSOP Synchronous Rectifier: Yes Control Features: Frequency Control, Soft Start Output Phases: 1 Duty Cycle (Max): 94% Clock Sync: No Part Status: Active Number of Outputs: 1 |
на замовлення 3558 шт: термін постачання 21-31 дні (днів) |
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| SBRS8190T3 | onsemi | Description: DIODE SCHOTTKY 90V 1A SMB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SBRS8190T3G-VF01 | onsemi |
Description: DIODE SCHOTTKY 90V 2A SMBQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 90 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: SMB Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CS8191XDWFR20 | onsemi |
Description: IC TRANSCEIVER 1/0 20SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 105°C Voltage - Supply: 8.5V ~ 15V Number of Drivers/Receivers: 1/0 Supplier Device Package: 20-SOIC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
| SJ6522AG | onsemi |
Description: BIP T03 PNP SPECIAL Packaging: Bulk Part Status: Active |
на замовлення 801 шт: термін постачання 21-31 дні (днів) |
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FQP7P06 | onsemi |
Description: MOSFET P-CH 60V 7A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 410mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BD17510STU | onsemi |
Description: TRANS NPN 45V 3A TO-126-3Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 30 W |
на замовлення 1830 шт: термін постачання 21-31 дні (днів) |
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MC100EL07DR2G | onsemi |
Description: IC GATE XOR/XNOR ECL 2INP 8-SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Differential Mounting Type: Surface Mount Logic Type: 2 Input XOR/XNOR Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.2V ~ 5.7V Number of Inputs: 2 Schmitt Trigger Input: No Supplier Device Package: 8-SOIC Number of Circuits: 1 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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MC100EL07DR2G | onsemi |
Description: IC GATE XOR/XNOR ECL 2INP 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Differential Mounting Type: Surface Mount Logic Type: 2 Input XOR/XNOR Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.2V ~ 5.7V Number of Inputs: 2 Schmitt Trigger Input: No Supplier Device Package: 8-SOIC Number of Circuits: 1 |
на замовлення 9999 шт: термін постачання 21-31 дні (днів) |
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MC33063AVPG | onsemi |
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Adjustable Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Up, Step-Down Current - Output: 1.5A (Switch) Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive or Negative Frequency - Switching: 100kHz Voltage - Input (Max): 40V Topology: Buck, Boost Supplier Device Package: 8-PDIP Synchronous Rectifier: No Voltage - Output (Max): 40V (Switch) Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 1.25V Part Status: Active |
на замовлення 9941 шт: термін постачання 21-31 дні (днів) |
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7WB3305CMX1TCG | onsemi |
Description: IC BUS SWITCH 1 X 1:1 8ULLGA |
на замовлення 5990 шт: термін постачання 21-31 дні (днів) |
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FDMF5071 | onsemi |
Description: SMART POWER STAGE (SPS) MODULESCurrent: 90 A Configuration: 1 Phase Type: MOSFET Mounting Type: Surface Mount Package / Case: 39-PowerVFQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FDMF5071 | onsemi |
Description: SMART POWER STAGE (SPS) MODULESCurrent: 90 A Configuration: 1 Phase Type: MOSFET Mounting Type: Surface Mount Package / Case: 39-PowerVFQFN Packaging: Cut Tape (CT) |
на замовлення 2807 шт: термін постачання 21-31 дні (днів) |
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ES2B | onsemi |
Description: DIODE STANDARD 100V 2A DO214AAPart Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 18pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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ES2B | onsemi |
Description: DIODE STANDARD 100V 2A DO214AACurrent - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 18pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
на замовлення 2737 шт: термін постачання 21-31 дні (днів) |
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FDS2170N3 | onsemi |
Description: MOSFET N-CH 200V 3A 8SOICPackage / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SO FLMP Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDS2170N3 | onsemi |
Description: MOSFET N-CH 200V 3A 8SOICInput Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SO FLMP Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZCM1213A-02SR | onsemi |
Description: TVS DIODE 3.3VWM 10VC SOT143Qualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: Yes Voltage - Clamping (Max) @ Ipp: 10V (Typ) Voltage - Breakdown (Min): 6V Unidirectional Channels: 2 Supplier Device Package: SOT-143 Voltage - Reverse Standoff (Typ): 3.3V Current - Peak Pulse (10/1000µs): 1A (8/20µs) Operating Temperature: -40°C ~ 85°C (TA) Type: Steering (Rail to Rail) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SZCM1213A-02SR | onsemi |
Description: TVS DIODE 3.3VWM 10VC SOT143Qualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: Yes Voltage - Clamping (Max) @ Ipp: 10V (Typ) Voltage - Breakdown (Min): 6V Unidirectional Channels: 2 Supplier Device Package: SOT-143 Voltage - Reverse Standoff (Typ): 3.3V Current - Peak Pulse (10/1000µs): 1A (8/20µs) Operating Temperature: -40°C ~ 85°C (TA) Type: Steering (Rail to Rail) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMFWS027N10MCLT1G | onsemi |
Description: PTNG 100V LL SO8FLInput Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3V @ 38µA Power Dissipation (Max): 3.5W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NVMFS4C308NWFT1G | onsemi |
Description: TRENCH 30V NCHInput Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 3W (Ta), 30.6W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NVMFS5C404NWFET1G | onsemi |
Description: T6-40V N 0.7 MOHMS SLPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Rds On (Max) @ Id, Vgs: 0.70mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NVMFWS021N10MCLT1G | onsemi |
Description: PTNG 100V LL SO8FLInput Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3V @ 42µA Power Dissipation (Max): 3.6W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NVMFS5831NLWFT1G | onsemi |
Description: T2 40V LL, SINGLE NCH, SO-8FL 2. Input Capacitance (Ciss) (Max) @ Vds: 4946 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 143W (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 161A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
| NVMFWS004N10MCT1G | onsemi |
Description: MOSFET N-CH 100V 5DFNGate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 4V @ 270µA Power Dissipation (Max): 3.8W (Ta), 164W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 48A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 138A (Tc) FET Type: N-Channel Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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CAT93C57V-26528T | onsemi |
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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| CAT93C57S-TE13 | onsemi |
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NTD4809NT4G | onsemi |
Description: POWER FIELD-EFFECT TRANSISTOR, 9Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 1.4W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V |
на замовлення 59246 шт: термін постачання 21-31 дні (днів) |
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| OPB865N55 | onsemi |
Description: SENSOR OPT PC PINS SLOT TYPEPackage / Case: Module, PC Pins, Slot Type Mounting Type: Through Hole |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||||||||||||||||
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NL17SZ08XV5T2G-L22087 | onsemi |
Description: IC GATE AND 1CH 2-INP SOT553Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-553 Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| STK621-728-E |
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 10A 21SIP
Features: Auto Restart, Bootstrap Circuit, Status Flag
Packaging: Tube
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 400V (Max)
Supplier Device Package: 21-SIP
Fault Protection: Current Limiting, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER 10A 21SIP
Features: Auto Restart, Bootstrap Circuit, Status Flag
Packaging: Tube
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 400V (Max)
Supplier Device Package: 21-SIP
Fault Protection: Current Limiting, UVLO
Load Type: Inductive
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| STK621-033D-E |
на замовлення 6130 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 1193.70 грн |
| STK621-014-E |
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 1828.38 грн |
| STK621-729-E |
Виробник: onsemi
Description: IC MOTOR DRIVER
Description: IC MOTOR DRIVER
товару немає в наявності
В кошику
од. на суму грн.
| MBRF30H100CTH |
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V TO220 FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3 FULLPACK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Description: DIODE ARR SCHOTT 100V TO220 FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3 FULLPACK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| NVLJWS022N06CLTAG |
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Виробник: onsemi
Description: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6 60V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 19.08 грн |
| 6000+ | 17.90 грн |
| 9000+ | 17.67 грн |
| NVMJD012N06CLTWG |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 11.5A 8LFPAK
Part Status: Active
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.2W (Ta), 42W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2N-CH 60V 11.5A 8LFPAK
Part Status: Active
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.2W (Ta), 42W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 2SC4080D-TD-E |
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Виробник: onsemi
Description: 2SC4080 - NPN EPITAXIAL PLANAR S
Description: 2SC4080 - NPN EPITAXIAL PLANAR S
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1312+ | 16.63 грн |
| FDS86252 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V
Description: MOSFET N-CH 150V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FDS86252 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 4.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V
Description: MOSFET N-CH 150V 4.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V
на замовлення 544 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 122.63 грн |
| 10+ | 74.89 грн |
| 100+ | 50.11 грн |
| 500+ | 37.06 грн |
| NTHD2110TT1G |
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Виробник: onsemi
Description: MOSFET P-CH 12V 4.5A CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 12V 4.5A CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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| FDA16N50-F109 |
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Виробник: onsemi
Description: MOSFET N-CH 500V 16.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
Description: MOSFET N-CH 500V 16.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
на замовлення 301 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 280.86 грн |
| 30+ | 149.12 грн |
| 120+ | 122.30 грн |
| SZBZX84B10LT1G |
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Виробник: onsemi
Description: DIODE ZENER 10V 250MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
Description: DIODE ZENER 10V 250MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 1.36 грн |
| 6000+ | 1.25 грн |
| SZBZX84B10LT1G |
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Виробник: onsemi
Description: DIODE ZENER 10V 250MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
Description: DIODE ZENER 10V 250MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
на замовлення 92914 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 37+ | 8.70 грн |
| 54+ | 5.71 грн |
| 108+ | 2.83 грн |
| 500+ | 2.59 грн |
| 1000+ | 2.45 грн |
| NCP12711ADNR2G |
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Виробник: onsemi
Description: 4-45 V INPUT CURRENT MODE ISOLAT
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 1MHz
Topology: Flyback, Forward Converter
Voltage - Supply (Vcc/Vdd): 4V ~ 45V
Supplier Device Package: 10-MSOP
Synchronous Rectifier: Yes
Control Features: Frequency Control, Soft Start
Output Phases: 1
Duty Cycle (Max): 94%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
Description: 4-45 V INPUT CURRENT MODE ISOLAT
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 1MHz
Topology: Flyback, Forward Converter
Voltage - Supply (Vcc/Vdd): 4V ~ 45V
Supplier Device Package: 10-MSOP
Synchronous Rectifier: Yes
Control Features: Frequency Control, Soft Start
Output Phases: 1
Duty Cycle (Max): 94%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| NCP12711ADNR2G |
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Виробник: onsemi
Description: 4-45 V INPUT CURRENT MODE ISOLAT
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 1MHz
Topology: Flyback, Forward Converter
Voltage - Supply (Vcc/Vdd): 4V ~ 45V
Supplier Device Package: 10-MSOP
Synchronous Rectifier: Yes
Control Features: Frequency Control, Soft Start
Output Phases: 1
Duty Cycle (Max): 94%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
Description: 4-45 V INPUT CURRENT MODE ISOLAT
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 1MHz
Topology: Flyback, Forward Converter
Voltage - Supply (Vcc/Vdd): 4V ~ 45V
Supplier Device Package: 10-MSOP
Synchronous Rectifier: Yes
Control Features: Frequency Control, Soft Start
Output Phases: 1
Duty Cycle (Max): 94%
Clock Sync: No
Part Status: Active
Number of Outputs: 1
на замовлення 3558 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 109.18 грн |
| 10+ | 76.64 грн |
| 25+ | 69.60 грн |
| 100+ | 58.03 грн |
| 250+ | 54.57 грн |
| 500+ | 52.48 грн |
| 1000+ | 51.21 грн |
| SBRS8190T3 |
Виробник: onsemi
Description: DIODE SCHOTTKY 90V 1A SMB
Description: DIODE SCHOTTKY 90V 1A SMB
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| SBRS8190T3G-VF01 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 90V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 90V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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| CS8191XDWFR20 |
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Виробник: onsemi
Description: IC TRANSCEIVER 1/0 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 8.5V ~ 15V
Number of Drivers/Receivers: 1/0
Supplier Device Package: 20-SOIC
Description: IC TRANSCEIVER 1/0 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 8.5V ~ 15V
Number of Drivers/Receivers: 1/0
Supplier Device Package: 20-SOIC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SJ6522AG |
на замовлення 801 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 96+ | 213.11 грн |
| FQP7P06 |
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Виробник: onsemi
Description: MOSFET P-CH 60V 7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 410mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET P-CH 60V 7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 410mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| BD17510STU |
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Виробник: onsemi
Description: TRANS NPN 45V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 30 W
Description: TRANS NPN 45V 3A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 30 W
на замовлення 1830 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 82.28 грн |
| 10+ | 49.52 грн |
| 100+ | 32.61 грн |
| 500+ | 23.78 грн |
| MC100EL07DR2G |
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Виробник: onsemi
Description: IC GATE XOR/XNOR ECL 2INP 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: 2 Input XOR/XNOR
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 2
Schmitt Trigger Input: No
Supplier Device Package: 8-SOIC
Number of Circuits: 1
Description: IC GATE XOR/XNOR ECL 2INP 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: 2 Input XOR/XNOR
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 2
Schmitt Trigger Input: No
Supplier Device Package: 8-SOIC
Number of Circuits: 1
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 227.47 грн |
| MC100EL07DR2G |
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Виробник: onsemi
Description: IC GATE XOR/XNOR ECL 2INP 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: 2 Input XOR/XNOR
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 2
Schmitt Trigger Input: No
Supplier Device Package: 8-SOIC
Number of Circuits: 1
Description: IC GATE XOR/XNOR ECL 2INP 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: 2 Input XOR/XNOR
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 2
Schmitt Trigger Input: No
Supplier Device Package: 8-SOIC
Number of Circuits: 1
на замовлення 9999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 523.75 грн |
| 10+ | 344.21 грн |
| 25+ | 303.98 грн |
| 100+ | 243.49 грн |
| 250+ | 223.43 грн |
| 500+ | 211.27 грн |
| 1000+ | 202.20 грн |
| MC33063AVPG |
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Виробник: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
на замовлення 9941 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 67.25 грн |
| 10+ | 46.40 грн |
| 50+ | 39.13 грн |
| 100+ | 34.61 грн |
| 250+ | 32.38 грн |
| 500+ | 31.03 грн |
| 1000+ | 29.44 грн |
| 2500+ | 28.29 грн |
| 5000+ | 27.60 грн |
| 7WB3305CMX1TCG |
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Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1603+ | 13.74 грн |
| FDMF5071 |
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Виробник: onsemi
Description: SMART POWER STAGE (SPS) MODULES
Current: 90 A
Configuration: 1 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVFQFN
Packaging: Tape & Reel (TR)
Description: SMART POWER STAGE (SPS) MODULES
Current: 90 A
Configuration: 1 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVFQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| FDMF5071 |
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Виробник: onsemi
Description: SMART POWER STAGE (SPS) MODULES
Current: 90 A
Configuration: 1 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVFQFN
Packaging: Cut Tape (CT)
Description: SMART POWER STAGE (SPS) MODULES
Current: 90 A
Configuration: 1 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVFQFN
Packaging: Cut Tape (CT)
на замовлення 2807 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 362.35 грн |
| 10+ | 231.38 грн |
| 100+ | 164.82 грн |
| 500+ | 128.02 грн |
| 1000+ | 119.53 грн |
| ES2B |
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Виробник: onsemi
Description: DIODE STANDARD 100V 2A DO214AA
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Description: DIODE STANDARD 100V 2A DO214AA
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| ES2B |
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Виробник: onsemi
Description: DIODE STANDARD 100V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 100V 2A DO214AA
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
на замовлення 2737 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 26.11 грн |
| 20+ | 15.69 грн |
| 100+ | 11.89 грн |
| 500+ | 9.99 грн |
| FDS2170N3 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 200V 3A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 200V 3A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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| FDS2170N3 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 200V 3A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 200V 3A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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| SZCM1213A-02SR |
![]() |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 10VC SOT143
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-143
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 3.3VWM 10VC SOT143
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-143
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| SZCM1213A-02SR |
![]() |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 10VC SOT143
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-143
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Cut Tape (CT)
Description: TVS DIODE 3.3VWM 10VC SOT143
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-143
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Operating Temperature: -40°C ~ 85°C (TA)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Cut Tape (CT)
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| NVMFWS027N10MCLT1G |
![]() |
Виробник: onsemi
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 38µA
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 38µA
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 24.38 грн |
| 3000+ | 23.02 грн |
| 4500+ | 22.61 грн |
| NVMFS4C308NWFT1G |
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Виробник: onsemi
Description: TRENCH 30V NCH
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 3W (Ta), 30.6W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TRENCH 30V NCH
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 3W (Ta), 30.6W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Мінімальне замовлення: 1500 шт
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| NVMFS5C404NWFET1G |
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Виробник: onsemi
Description: T6-40V N 0.7 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.70mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6-40V N 0.7 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.70mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 175.18 грн |
| NVMFWS021N10MCLT1G |
![]() |
Виробник: onsemi
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Мінімальне замовлення: 1500 шт
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| NVMFS5831NLWFT1G |
Виробник: onsemi
Description: T2 40V LL, SINGLE NCH, SO-8FL 2.
Input Capacitance (Ciss) (Max) @ Vds: 4946 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 143W (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 161A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: T2 40V LL, SINGLE NCH, SO-8FL 2.
Input Capacitance (Ciss) (Max) @ Vds: 4946 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 143W (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 161A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Мінімальне замовлення: 1500 шт
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| NVMFWS004N10MCT1G |
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Виробник: onsemi
Description: MOSFET N-CH 100V 5DFN
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 3.8W (Ta), 164W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 138A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 100V 5DFN
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 3.8W (Ta), 164W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 138A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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| CAT93C57V-26528T |
![]() |
Виробник: onsemi
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1803+ | 12.29 грн |
| CAT93C57S-TE13 |
![]() |
Виробник: onsemi
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
Description: IC EEPROM 2KBIT MICROWIRE 8SOIC
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1697+ | 13.02 грн |
| NTD4809NT4G |
![]() |
Виробник: onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
на замовлення 59246 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 538+ | 37.58 грн |
| OPB865N55 |
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Виробник: onsemi
Description: SENSOR OPT PC PINS SLOT TYPE
Package / Case: Module, PC Pins, Slot Type
Mounting Type: Through Hole
Description: SENSOR OPT PC PINS SLOT TYPE
Package / Case: Module, PC Pins, Slot Type
Mounting Type: Through Hole
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| NL17SZ08XV5T2G-L22087 |
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Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.























