Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FSL146MRBN | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; DIP8; flyback Output voltage: 650V Power: 26W Operating temperature: -40...125°C Number of channels: 1 Mounting: THT Duty cycle factor: 61...73% Kind of integrated circuit: PWM controller Topology: flyback Input voltage: 85...265V Case: DIP8 Operating voltage: 7.5...24.5V DC Frequency: 67kHz On-state resistance: 2.6Ω Output current: 1.5A Type of integrated circuit: PMIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDS6682 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 50A |
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В кошику од. на суму грн. | ||||||||||||||||
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FDB3652 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Gate charge: 53nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 61A On-state resistance: 43mΩ |
на замовлення 408 шт: термін постачання 21-30 дні (днів) |
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TIP121G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 5A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMSZ4684T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Mounting: SMD Case: SOD123 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 3.3V Leakage current: 7.5µA Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMSZ4xxT1G |
на замовлення 7219 шт: термін постачання 21-30 дні (днів) |
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MM5Z3V3T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: reel; tape Case: SOD523F Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G |
на замовлення 114 шт: термін постачання 21-30 дні (днів) |
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MRA4006T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 800V; 1A; SMA; Ufmax: 1.18V; reel,tape Mounting: SMD Max. off-state voltage: 0.8kV Max. load current: 30A Max. forward voltage: 1.18V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: rectifying Case: SMA |
на замовлення 3422 шт: термін постачання 21-30 дні (днів) |
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NCP3232NMNTXG | ONSEMI |
![]() Description: IC: PMIC; QFN40; buck; 4.5÷23VDC Case: QFN40 Mounting: SMD Number of channels: 1 Operating temperature: -40...125°C Topology: buck Frequency: 450...550kHz Operating voltage: 4.5...23V DC Output current: 15A Type of integrated circuit: PMIC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74VHCT125ADR2G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHCT; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Quiescent current: 40µA Kind of package: reel; tape Manufacturer series: VHCT |
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В кошику од. на суму грн. | ||||||||||||||||
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SZMMSZ4685T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 7.5µA Manufacturer series: MMSZ4xxT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HCT241ADTG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: tube Quiescent current: 160µA |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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MC74HCT241ADTR2G | ONSEMI |
![]() Description: IC: digital; 3-state,buffer,octal,line receiver,line driver Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: HCT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
EFC4612R-S-TR | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; Idm: 60A; 1.6W; WLCSP4 Mounting: SMD Gate-source voltage: ±12V On-state resistance: 72mΩ Pulsed drain current: 60A Type of transistor: N-MOSFET x2 Power dissipation: 1.6W Polarisation: unipolar Drain current: 6A Drain-source voltage: 24V Kind of package: reel; tape Case: WLCSP4 Version: ESD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FDLL4150 | ONSEMI |
![]() Description: Diode: switching; SMD; 50V; 0.4A; 6ns; SOD80; reel,tape Semiconductor structure: single diode Load current: 0.4A Max. off-state voltage: 50V Case: SOD80 Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: small signal Mounting: SMD Reverse recovery time: 6ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
1N5250B | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 20V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: 1N52xxB |
на замовлення 4996 шт: термін постачання 21-30 дні (днів) |
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2SB1202S-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 3A; 1W; IPAK Mounting: THT Case: IPAK Kind of package: tube Collector-emitter voltage: 50V Current gain: 140...280 Collector current: 3A Type of transistor: PNP Power dissipation: 1W Polarisation: bipolar Frequency: 150MHz |
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В кошику од. на суму грн. | |||||||||||||||||
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2N5192G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 4A; 40W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 4A Power dissipation: 40W Case: TO225 Current gain: 20...80 Mounting: THT Kind of package: bulk Frequency: 2MHz |
на замовлення 483 шт: термін постачання 21-30 дні (днів) |
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2N5191G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 4A; 40W; TO225 Case: TO225 Frequency: 2MHz Collector-emitter voltage: 60V Current gain: 25...100 Collector current: 4A Type of transistor: NPN Power dissipation: 40W Polarisation: bipolar Kind of package: bulk Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SZBZX84C3V3LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SZBZX84C3V3ET1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FSA2467MPX | ONSEMI |
![]() Description: IC: analog switch; Ch: 4; MLP16; 1.65÷4.3VDC; reel,tape; 500nA Supply voltage: 1.65...4.3V DC Type of integrated circuit: analog switch Number of channels: 4 Quiescent current: 500nA Kind of output: DPDT x2 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Case: MLP16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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H11G1M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV Case: DIP6 Turn-off time: 0.1ms CTR@If: 100%@10mA Collector-emitter voltage: 100V Turn-on time: 5µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SZ1SMA5930BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FFSH1065B-F085 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 11.5A; TO247-2; tube Max. off-state voltage: 650V Application: automotive industry Kind of package: tube Type of diode: Schottky rectifying Case: TO247-2 Mounting: THT Technology: SiC Load current: 11.5A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NJW21194G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 200W Case: TO3P Current gain: 20...70 Mounting: THT Kind of package: tube Frequency: 4MHz Application: automotive industry |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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MJW21194G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3 Mounting: THT Case: TO247-3 Frequency: 4MHz Collector-emitter voltage: 250V Current gain: 8...80 Collector current: 16A Type of transistor: NPN Power dissipation: 200W Polarisation: bipolar Kind of package: tube |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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FCH104N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 111A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 357W Case: TO247 Gate-source voltage: ±20V On-state resistance: 96mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 63nC Pulsed drain current: 111A |
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В кошику од. на суму грн. | |||||||||||||||||
2SD1802S-TL-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 50V; 3A; 1W; TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1W Case: TO252 Current gain: 100...560 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MM74HCT05M | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; HCT; 4.5÷5.5VDC; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Kind of output: open drain Manufacturer series: HCT Quiescent current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SA2202-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89 Mounting: SMD Frequency: 300MHz Collector-emitter voltage: 100V Current gain: 200...400 Collector current: 2A Type of transistor: PNP Power dissipation: 1.3W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SA2013-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89 Mounting: SMD Frequency: 360MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 4A Type of transistor: PNP Power dissipation: 1.3W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
2SA2126-TL-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK Mounting: SMD Frequency: 390MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 3A Type of transistor: PNP Power dissipation: 0.8W Polarisation: bipolar Kind of package: reel; tape Case: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2SA2124-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 2A; 3.5W; SOT89 Mounting: SMD Frequency: 440MHz Collector-emitter voltage: 30V Current gain: 65...560 Collector current: 2A Type of transistor: PNP Power dissipation: 3.5W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SA2153-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89 Mounting: SMD Frequency: 420MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 2A Type of transistor: PNP Power dissipation: 1.3W Polarisation: bipolar Kind of package: reel; tape Case: SOT89 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MOC3072SM | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3072M; 1kV/μs Type of optocoupler: optotriac Case: PDIP6 Max. off-state voltage: 3V Output voltage: 800V Number of channels: 1 Kind of output: triac; zero voltage crossing driver Insulation voltage: 4.17kV Trigger current: 10mA Slew rate: 1kV/μs Manufacturer series: MOC3072M Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MOC3073SM | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3073M; 1kV/μs Type of optocoupler: optotriac Case: PDIP6 Max. off-state voltage: 3V Output voltage: 800V Number of channels: 1 Kind of output: triac; without zero voltage crossing driver Insulation voltage: 4.17kV Trigger current: 6mA Slew rate: 1kV/μs Manufacturer series: MOC3073M Mounting: SMD |
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В кошику од. на суму грн. | |||||||||||||||||
MOC3073SVM | ONSEMI |
![]() Description: Optotriac Type of optocoupler: optotriac |
на замовлення 534 шт: термін постачання 21-30 дні (днів) |
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NCP1597AMNTWG | ONSEMI |
![]() Description: IC: PMIC; Uin: 4÷5.5V; DFN6; buck Type of integrated circuit: PMIC Input voltage: 4...5.5V Output current: 2A Frequency: 0.87...1.13MHz Mounting: SMD Case: DFN6 Topology: buck Number of channels: 1 Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
GBPC3510W | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
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В кошику од. на суму грн. | |||||||||||||||||
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74VHC132M | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Operating temperature: -40...85°C Case: SO14 Number of inputs: 2 Supply voltage: 2...5.5V DC Number of channels: quad; 4 Quiescent current: 20µA Kind of package: tube Kind of input: with Schmitt trigger Kind of gate: NAND Family: VHC Mounting: SMD |
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В кошику од. на суму грн. | ||||||||||||||||
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74VHC132MX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Operating temperature: -40...85°C Case: SO14 Number of inputs: 2 Supply voltage: 2...5.5V DC Number of channels: quad; 4 Quiescent current: 20µA Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NAND Family: VHC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74VHC132DG | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Operating temperature: -55...125°C Case: SO14 Number of inputs: 2 Supply voltage: 2...5.5V DC Number of channels: quad; 4 Quiescent current: 20µA Kind of package: tube Kind of input: with Schmitt trigger Kind of gate: NAND Technology: CMOS Family: VHC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MC74VHC132DR2G | ONSEMI |
![]() Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14 Type of integrated circuit: digital Operating temperature: -55...125°C Case: SOIC14 Number of inputs: 2 Supply voltage: 2...5.5V DC Number of channels: 4 Kind of package: reel; tape Kind of input: with Schmitt trigger Manufacturer series: VHC Kind of gate: NAND Technology: CMOS Kind of integrated circuit: Schmitt trigger Family: VHC Mounting: SMD |
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В кошику од. на суму грн. | |||||||||||||||||
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MC74VHC132DTR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; 20uA Type of integrated circuit: digital Operating temperature: -55...125°C Case: TSSOP14 Number of inputs: 2 Supply voltage: 2...5.5V DC Number of channels: quad; 4 Quiescent current: 20µA Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NAND Technology: CMOS Family: VHC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BUZ11-NR4941 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 30A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 882 шт: термін постачання 21-30 дні (днів) |
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FQP14N30 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W Mounting: THT Kind of package: tube Power dissipation: 147W Polarisation: unipolar Gate charge: 40nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 57.6A Case: TO220AB Drain-source voltage: 300V Drain current: 9.1A On-state resistance: 0.29Ω Type of transistor: N-MOSFET |
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В кошику од. на суму грн. | ||||||||||||||||
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FDPF14N30 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 8.4A; Idm: 56A; 35W; TO220FP Mounting: THT Kind of package: tube Power dissipation: 35W Polarisation: unipolar Gate charge: 25nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 56A Case: TO220FP Drain-source voltage: 300V Drain current: 8.4A On-state resistance: 0.29Ω Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SS22 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 20V; 2A; reel,tape; 1.3W Mounting: SMD Power dissipation: 1.3W Kind of package: reel; tape Type of diode: Schottky rectifying Case: SMB Max. off-state voltage: 20V Max. forward voltage: 0.5V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SS22FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 2A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: SOD123F Max. off-state voltage: 20V Max. forward voltage: 0.5V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SS22T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 20V; 2A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: SMB Max. off-state voltage: 20V Max. load current: 3A Max. forward voltage: 0.5V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 75A |
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2N5461 | ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; -40V; 350mW; TO92 Type of transistor: P-JFET Polarisation: unipolar Case: TO92 Mounting: THT Drain-source voltage: -40V Average continuous current: -9mA Power: 0.35W |
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MC79M15BDTRKG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -15V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC79M00 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 |
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MC79M15CTG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.3V Output voltage: -15V Output current: 0.5A Case: TO220AB Mounting: THT Manufacturer series: MC79M00 Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.508...0.61mm |
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NCP565D2T33R4G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DPAK3; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 3.3V Output current: 1.5A Case: DPAK3 Mounting: SMD Manufacturer series: NCP565 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...18V |
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NCP565ST12T3G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1.5A; SOT223; SMD Operating temperature: -40...125°C Case: SOT223 Tolerance: ±2% Output voltage: 1.2V Output current: 1.5A Voltage drop: 1.3V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2.5...18V Manufacturer series: NCP565 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD |
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FPF1321BUCX | ONSEMI |
![]() Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape Type of integrated circuit: power switch Output current: 1.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: WLCSP6 On-state resistance: 50mΩ Kind of package: reel; tape Supply voltage: 1.5...5.5V DC Active logical level: high Operating temperature: -40...85°C Version: ESD |
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FDS3590 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: 80V Drain current: 6.5A On-state resistance: 86mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 474 шт: термін постачання 21-30 дні (днів) |
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MMSZ5263BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 56V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
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SZMMSZ5263BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 56V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
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NRVBA2H100NT3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape Case: SMA Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 100V Max. forward voltage: 0.79V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 130A Application: automotive industry Type of diode: Schottky rectifying |
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В кошику од. на суму грн. |
FSL146MRBN |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; DIP8; flyback
Output voltage: 650V
Power: 26W
Operating temperature: -40...125°C
Number of channels: 1
Mounting: THT
Duty cycle factor: 61...73%
Kind of integrated circuit: PWM controller
Topology: flyback
Input voltage: 85...265V
Case: DIP8
Operating voltage: 7.5...24.5V DC
Frequency: 67kHz
On-state resistance: 2.6Ω
Output current: 1.5A
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; DIP8; flyback
Output voltage: 650V
Power: 26W
Operating temperature: -40...125°C
Number of channels: 1
Mounting: THT
Duty cycle factor: 61...73%
Kind of integrated circuit: PWM controller
Topology: flyback
Input voltage: 85...265V
Case: DIP8
Operating voltage: 7.5...24.5V DC
Frequency: 67kHz
On-state resistance: 2.6Ω
Output current: 1.5A
Type of integrated circuit: PMIC
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FDS6682 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; Idm: 50A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
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FDB3652 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 53nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 61A
On-state resistance: 43mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 53nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 61A
On-state resistance: 43mΩ
на замовлення 408 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 132.87 грн |
5+ | 108.82 грн |
10+ | 93.49 грн |
27+ | 88.89 грн |
TIP121G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
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MMSZ4684T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.3V
Leakage current: 7.5µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ4xxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 3.3V
Leakage current: 7.5µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ4xxT1G
на замовлення 7219 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.73 грн |
50+ | 7.82 грн |
59+ | 6.59 грн |
90+ | 4.29 грн |
108+ | 3.57 грн |
484+ | 1.89 грн |
1331+ | 1.79 грн |
3000+ | 1.72 грн |
MM5Z3V3T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
на замовлення 114 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 9.90 грн |
55+ | 6.97 грн |
89+ | 4.32 грн |
MRA4006T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; Ufmax: 1.18V; reel,tape
Mounting: SMD
Max. off-state voltage: 0.8kV
Max. load current: 30A
Max. forward voltage: 1.18V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; Ufmax: 1.18V; reel,tape
Mounting: SMD
Max. off-state voltage: 0.8kV
Max. load current: 30A
Max. forward voltage: 1.18V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
на замовлення 3422 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.16 грн |
35+ | 11.04 грн |
50+ | 7.89 грн |
100+ | 6.82 грн |
188+ | 4.90 грн |
516+ | 4.60 грн |
NCP3232NMNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷23VDC
Case: QFN40
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Topology: buck
Frequency: 450...550kHz
Operating voltage: 4.5...23V DC
Output current: 15A
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷23VDC
Case: QFN40
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Topology: buck
Frequency: 450...550kHz
Operating voltage: 4.5...23V DC
Output current: 15A
Type of integrated circuit: PMIC
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MC74VHCT125ADR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHCT
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SZMMSZ4685T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 7.5µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 7.5µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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MC74HCT241ADTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 160µA
на замовлення 280 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 117.19 грн |
10+ | 87.36 грн |
20+ | 47.45 грн |
53+ | 44.86 грн |
MC74HCT241ADTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
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EFC4612R-S-TR |
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; Idm: 60A; 1.6W; WLCSP4
Mounting: SMD
Gate-source voltage: ±12V
On-state resistance: 72mΩ
Pulsed drain current: 60A
Type of transistor: N-MOSFET x2
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 6A
Drain-source voltage: 24V
Kind of package: reel; tape
Case: WLCSP4
Version: ESD
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; Idm: 60A; 1.6W; WLCSP4
Mounting: SMD
Gate-source voltage: ±12V
On-state resistance: 72mΩ
Pulsed drain current: 60A
Type of transistor: N-MOSFET x2
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: 6A
Drain-source voltage: 24V
Kind of package: reel; tape
Case: WLCSP4
Version: ESD
Kind of channel: enhancement
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FDLL4150 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.4A; 6ns; SOD80; reel,tape
Semiconductor structure: single diode
Load current: 0.4A
Max. off-state voltage: 50V
Case: SOD80
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: SMD
Reverse recovery time: 6ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.4A; 6ns; SOD80; reel,tape
Semiconductor structure: single diode
Load current: 0.4A
Max. off-state voltage: 50V
Case: SOD80
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: SMD
Reverse recovery time: 6ns
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1N5250B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
на замовлення 4996 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.71 грн |
85+ | 4.54 грн |
200+ | 1.92 грн |
500+ | 1.68 грн |
706+ | 1.30 грн |
1941+ | 1.23 грн |
2SB1202S-E |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; IPAK
Mounting: THT
Case: IPAK
Kind of package: tube
Collector-emitter voltage: 50V
Current gain: 140...280
Collector current: 3A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Frequency: 150MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1W; IPAK
Mounting: THT
Case: IPAK
Kind of package: tube
Collector-emitter voltage: 50V
Current gain: 140...280
Collector current: 3A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Frequency: 150MHz
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2N5192G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 40W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Current gain: 20...80
Mounting: THT
Kind of package: bulk
Frequency: 2MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 40W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Current gain: 20...80
Mounting: THT
Kind of package: bulk
Frequency: 2MHz
на замовлення 483 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.55 грн |
10+ | 48.28 грн |
24+ | 38.62 грн |
64+ | 36.48 грн |
250+ | 35.10 грн |
2N5191G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 40W; TO225
Case: TO225
Frequency: 2MHz
Collector-emitter voltage: 60V
Current gain: 25...100
Collector current: 4A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 40W; TO225
Case: TO225
Frequency: 2MHz
Collector-emitter voltage: 60V
Current gain: 25...100
Collector current: 4A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
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SZBZX84C3V3LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C3V3ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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FSA2467MPX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; MLP16; 1.65÷4.3VDC; reel,tape; 500nA
Supply voltage: 1.65...4.3V DC
Type of integrated circuit: analog switch
Number of channels: 4
Quiescent current: 500nA
Kind of output: DPDT x2
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: MLP16
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 4; MLP16; 1.65÷4.3VDC; reel,tape; 500nA
Supply voltage: 1.65...4.3V DC
Type of integrated circuit: analog switch
Number of channels: 4
Quiescent current: 500nA
Kind of output: DPDT x2
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Case: MLP16
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H11G1M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
Case: DIP6
Turn-off time: 0.1ms
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
Case: DIP6
Turn-off time: 0.1ms
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Turn-on time: 5µs
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SZ1SMA5930BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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FFSH1065B-F085 |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 11.5A; TO247-2; tube
Max. off-state voltage: 650V
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO247-2
Mounting: THT
Technology: SiC
Load current: 11.5A
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 11.5A; TO247-2; tube
Max. off-state voltage: 650V
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO247-2
Mounting: THT
Technology: SiC
Load current: 11.5A
Semiconductor structure: single diode
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NJW21194G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO3P
Current gain: 20...70
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Application: automotive industry
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO3P
Current gain: 20...70
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Application: automotive industry
на замовлення 29 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 316.08 грн |
5+ | 210.74 грн |
12+ | 199.25 грн |
MJW21194G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3
Mounting: THT
Case: TO247-3
Frequency: 4MHz
Collector-emitter voltage: 250V
Current gain: 8...80
Collector current: 16A
Type of transistor: NPN
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3
Mounting: THT
Case: TO247-3
Frequency: 4MHz
Collector-emitter voltage: 250V
Current gain: 8...80
Collector current: 16A
Type of transistor: NPN
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
на замовлення 22 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 353.22 грн |
4+ | 257.49 грн |
10+ | 243.69 грн |
FCH104N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 111A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 63nC
Pulsed drain current: 111A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 111A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 63nC
Pulsed drain current: 111A
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2SD1802S-TL-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1W
Case: TO252
Current gain: 100...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1W
Case: TO252
Current gain: 100...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
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MM74HCT05M |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; HCT; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: open drain
Manufacturer series: HCT
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; HCT; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: open drain
Manufacturer series: HCT
Quiescent current: 20µA
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2SA2202-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Frequency: 300MHz
Collector-emitter voltage: 100V
Current gain: 200...400
Collector current: 2A
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Frequency: 300MHz
Collector-emitter voltage: 100V
Current gain: 200...400
Collector current: 2A
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
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2SA2013-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Frequency: 360MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 4A
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Frequency: 360MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 4A
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
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2SA2126-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Frequency: 390MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 3A
Type of transistor: PNP
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Frequency: 390MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 3A
Type of transistor: PNP
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK
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2SA2124-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 3.5W; SOT89
Mounting: SMD
Frequency: 440MHz
Collector-emitter voltage: 30V
Current gain: 65...560
Collector current: 2A
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 3.5W; SOT89
Mounting: SMD
Frequency: 440MHz
Collector-emitter voltage: 30V
Current gain: 65...560
Collector current: 2A
Type of transistor: PNP
Power dissipation: 3.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
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2SA2153-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Frequency: 420MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 2A
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Frequency: 420MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 2A
Type of transistor: PNP
Power dissipation: 1.3W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
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MOC3072SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3072M; 1kV/μs
Type of optocoupler: optotriac
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 800V
Number of channels: 1
Kind of output: triac; zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 10mA
Slew rate: 1kV/μs
Manufacturer series: MOC3072M
Mounting: SMD
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3072M; 1kV/μs
Type of optocoupler: optotriac
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 800V
Number of channels: 1
Kind of output: triac; zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 10mA
Slew rate: 1kV/μs
Manufacturer series: MOC3072M
Mounting: SMD
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MOC3073SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3073M; 1kV/μs
Type of optocoupler: optotriac
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 800V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 6mA
Slew rate: 1kV/μs
Manufacturer series: MOC3073M
Mounting: SMD
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3073M; 1kV/μs
Type of optocoupler: optotriac
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 800V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 6mA
Slew rate: 1kV/μs
Manufacturer series: MOC3073M
Mounting: SMD
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MOC3073SVM |
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на замовлення 534 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
79+ | 80.05 грн |
400+ | 64.37 грн |
NCP1597AMNTWG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4÷5.5V; DFN6; buck
Type of integrated circuit: PMIC
Input voltage: 4...5.5V
Output current: 2A
Frequency: 0.87...1.13MHz
Mounting: SMD
Case: DFN6
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4÷5.5V; DFN6; buck
Type of integrated circuit: PMIC
Input voltage: 4...5.5V
Output current: 2A
Frequency: 0.87...1.13MHz
Mounting: SMD
Case: DFN6
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
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GBPC3510W |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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74VHC132M |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: VHC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: VHC
Mounting: SMD
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74VHC132MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: VHC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: VHC
Mounting: SMD
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MC74VHC132DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: VHC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: VHC
Mounting: SMD
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MC74VHC132DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SOIC14
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: 4
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: VHC
Kind of gate: NAND
Technology: CMOS
Kind of integrated circuit: Schmitt trigger
Family: VHC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SOIC14
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: 4
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Manufacturer series: VHC
Kind of gate: NAND
Technology: CMOS
Kind of integrated circuit: Schmitt trigger
Family: VHC
Mounting: SMD
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MC74VHC132DTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; 20uA
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: VHC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; 20uA
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...5.5V DC
Number of channels: quad; 4
Quiescent current: 20µA
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: VHC
Mounting: SMD
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BUZ11-NR4941 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 882 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 97.38 грн |
10+ | 48.82 грн |
22+ | 42.00 грн |
59+ | 39.70 грн |
500+ | 38.16 грн |
FQP14N30 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W
Mounting: THT
Kind of package: tube
Power dissipation: 147W
Polarisation: unipolar
Gate charge: 40nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 57.6A
Case: TO220AB
Drain-source voltage: 300V
Drain current: 9.1A
On-state resistance: 0.29Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W
Mounting: THT
Kind of package: tube
Power dissipation: 147W
Polarisation: unipolar
Gate charge: 40nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 57.6A
Case: TO220AB
Drain-source voltage: 300V
Drain current: 9.1A
On-state resistance: 0.29Ω
Type of transistor: N-MOSFET
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FDPF14N30 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 8.4A; Idm: 56A; 35W; TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 56A
Case: TO220FP
Drain-source voltage: 300V
Drain current: 8.4A
On-state resistance: 0.29Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 8.4A; Idm: 56A; 35W; TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 56A
Case: TO220FP
Drain-source voltage: 300V
Drain current: 8.4A
On-state resistance: 0.29Ω
Type of transistor: N-MOSFET
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SS22 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 2A; reel,tape; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMB
Max. off-state voltage: 20V
Max. forward voltage: 0.5V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 2A; reel,tape; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMB
Max. off-state voltage: 20V
Max. forward voltage: 0.5V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
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SS22FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD123F
Max. off-state voltage: 20V
Max. forward voltage: 0.5V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD123F
Max. off-state voltage: 20V
Max. forward voltage: 0.5V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
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SS22T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMB
Max. off-state voltage: 20V
Max. load current: 3A
Max. forward voltage: 0.5V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SMB
Max. off-state voltage: 20V
Max. load current: 3A
Max. forward voltage: 0.5V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 75A
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2N5461 |
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Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; -40V; 350mW; TO92
Type of transistor: P-JFET
Polarisation: unipolar
Case: TO92
Mounting: THT
Drain-source voltage: -40V
Average continuous current: -9mA
Power: 0.35W
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; -40V; 350mW; TO92
Type of transistor: P-JFET
Polarisation: unipolar
Case: TO92
Mounting: THT
Drain-source voltage: -40V
Average continuous current: -9mA
Power: 0.35W
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MC79M15BDTRKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
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MC79M15CTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
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NCP565D2T33R4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DPAK3; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1.5A
Case: DPAK3
Mounting: SMD
Manufacturer series: NCP565
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...18V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DPAK3; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 3.3V
Output current: 1.5A
Case: DPAK3
Mounting: SMD
Manufacturer series: NCP565
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...18V
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NCP565ST12T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1.5A; SOT223; SMD
Operating temperature: -40...125°C
Case: SOT223
Tolerance: ±2%
Output voltage: 1.2V
Output current: 1.5A
Voltage drop: 1.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...18V
Manufacturer series: NCP565
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1.5A; SOT223; SMD
Operating temperature: -40...125°C
Case: SOT223
Tolerance: ±2%
Output voltage: 1.2V
Output current: 1.5A
Voltage drop: 1.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...18V
Manufacturer series: NCP565
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
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FPF1321BUCX |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Type of integrated circuit: power switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
Version: ESD
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Type of integrated circuit: power switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 1.5...5.5V DC
Active logical level: high
Operating temperature: -40...85°C
Version: ESD
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FDS3590 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: 80V
Drain current: 6.5A
On-state resistance: 86mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: 80V
Drain current: 6.5A
On-state resistance: 86mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 474 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 59.42 грн |
9+ | 43.68 грн |
25+ | 38.47 грн |
26+ | 35.10 грн |
70+ | 33.18 грн |
MMSZ5263BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 56V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 56V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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SZMMSZ5263BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 56V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 56V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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NRVBA2H100NT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 100V
Max. forward voltage: 0.79V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 130A
Application: automotive industry
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 100V
Max. forward voltage: 0.79V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 130A
Application: automotive industry
Type of diode: Schottky rectifying
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