| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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MC74VHC4051DTR2G | ONSEMI |
Category: Integrated circuits - UnclassifiedDescription: IC: digital; SMD; -55÷125°C; TSSOP16; VHC; Ch: 1; OUT: 1; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: demultiplexer; multiplexer Number of inputs: 8 Mounting: SMD Family: VHC Number of outputs: 1 Case: TSSOP16 Number of channels: 1 Operating temperature: -55...125°C |
на замовлення 7500 шт: термін постачання 14-30 дні (днів) |
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NCV47700PDAJR2G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8 Mounting: SMD Kind of voltage regulator: adjustable; LDO; linear Output current: 0.35A Type of integrated circuit: voltage regulator Application: automotive industry Output voltage: 5...20V Kind of package: reel; tape Case: SO8 Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NLV17SZ74USG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 1; CMOS; SMD; US8; 10uA; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Technology: CMOS Mounting: SMD Case: US8 Operating temperature: -55...125°C Quiescent current: 10µA Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||||
| BDK-GEVK | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; Comp: AX8052F100,RSL10 Type of development kit: evaluation Kit contents: cable USB A plug - USB micro plug; prototype board Components: AX8052F100; RSL10 Programmers and development kits features: Arduino Shield compatible; Bluetooth board Interface: GPIO; I2C; SPI; UART Connection: CR2032; pin strips; Pmod socket; USB micro |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MOC3023SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver Type of optocoupler: optotriac Insulation voltage: 5kV Output voltage: 400V Kind of output: without zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 5mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC302XM |
на замовлення 1330 шт: термін постачання 14-30 дні (днів) |
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FDD86113LZ | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 3.1W; DPAK,TO252 On-state resistance: 0.104Ω Mounting: SMD Power dissipation: 3.1W Gate charge: 6nC Polarisation: unipolar Technology: PowerTrench® Drain current: 4.2A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Case: DPAK; TO252 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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SBC847BDW1T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 2034 шт: термін постачання 14-30 дні (днів) |
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BC847BDW1T3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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SBC847BDW1T3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| KSE13003H2ASTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1.5A Power dissipation: 20W Case: TO126ISO Pulsed collector current: 3A Current gain: 14...21 Mounting: THT Kind of package: tube Frequency: 4MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SZESD1L001W1T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 16.5V; double x2,common anode; SC88; Ch: 4 Mounting: SMD Breakdown voltage: 16.5V Application: automotive industry Max. off-state voltage: 5V Kind of package: reel; tape Semiconductor structure: common anode; double x2 Case: SC88 Type of diode: TVS array Number of channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NCV6323BMTAATBG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; WDFN8; SMD; reel,tape; automotive industry Mounting: SMD Type of integrated circuit: PMIC Application: automotive industry Kind of package: reel; tape Case: WDFN8 Kind of integrated circuit: DC/DC converter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCV6323BMTAAWTBG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; WDFN8; SMD; reel,tape; automotive industry Mounting: SMD Type of integrated circuit: PMIC Application: automotive industry Kind of package: reel; tape Case: WDFN8 Kind of integrated circuit: DC/DC converter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCV6323DMTAATBG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; WDFN8; SMD; reel,tape; automotive industry Mounting: SMD Type of integrated circuit: PMIC Application: automotive industry Kind of package: reel; tape Case: WDFN8 Kind of integrated circuit: DC/DC converter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCV6323DMTAAWTBG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; WDFN8; SMD; reel,tape; automotive industry Mounting: SMD Type of integrated circuit: PMIC Application: automotive industry Kind of package: reel; tape Case: WDFN8 Kind of integrated circuit: DC/DC converter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FOD817B3S | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Number of pins: 4 Collector-emitter voltage: 70V Kind of output: transistor Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Turn-on time: 18µs Case: SMD4 Turn-off time: 18µs Number of channels: 1 Collector current: 50mA Mounting: SMD Manufacturer series: FOD817 |
на замовлення 8000 шт: термін постачання 14-30 дні (днів) |
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FSSD06BQX | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: multiplexer; SPST; Ch: 1; MLP24; 1.65÷3.6V; 1uA Type of integrated circuit: multiplexer Output configuration: SPST Number of channels: 1 Case: MLP24 Supply voltage: 1.65...3.6V Mounting: SMD Resistance: 2.5Ω Operating temperature: -40...85°C Quiescent current: 1µA |
на замовлення 2380 шт: термін постачання 14-30 дні (днів) |
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NC7SZ157P6X | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer,non-inverting; Ch: 1; SMD; SC70-6; 10uA Type of integrated circuit: digital Number of channels: 1 Case: SC70-6 Supply voltage: 1.65...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 10µA Kind of integrated circuit: multiplexer; non-inverting |
на замовлення 2750 шт: термін постачання 14-30 дні (днів) |
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RS1D | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.19W |
на замовлення 6409 шт: термін постачання 14-30 дні (днів) |
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RS1DFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.8A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| GBPC3502W | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GBPC3501 | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GBPC3504 | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DAN222M3T5G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 80V; 100mA; 4ns; SOT723; Ufmax: 1.2V; 260mW Capacitance: 3.5pF Mounting: SMD Max. forward voltage: 1.2V Power dissipation: 0.26W Features of semiconductor devices: ultrafast switching Max. off-state voltage: 80V Load current: 0.1A Kind of package: reel; tape Semiconductor structure: common cathode; double Leakage current: 0.1mA Case: SOT723 Type of diode: rectifying Reverse recovery time: 4ns |
на замовлення 6292 шт: термін постачання 14-30 дні (днів) |
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DAN222T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A Power dissipation: 0.15W Features of semiconductor devices: ultrafast switching Max. off-state voltage: 80V Load current: 0.1A Max. load current: 0.3A Kind of package: reel; tape Semiconductor structure: common cathode; double Case: SC75 Capacitance: 3.5pF Type of diode: rectifying Reverse recovery time: 4ns Mounting: SMD Max. forward impulse current: 2A Max. forward voltage: 1.2V |
на замовлення 2823 шт: термін постачання 14-30 дні (днів) |
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| DAN222G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape Mounting: SMD Max. forward voltage: 1.2V Features of semiconductor devices: small signal Max. off-state voltage: 80V Load current: 0.1A Kind of package: reel; tape Semiconductor structure: common cathode; double Case: SOT416 Type of diode: switching Reverse recovery time: 4ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MJE5742G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 400V; 8A; 2W; TO220AB Power dissipation: 2W Type of transistor: NPN Kind of package: tube Case: TO220AB Collector current: 8A Mounting: THT Collector-emitter voltage: 400V Polarisation: bipolar Kind of transistor: Darlington |
на замовлення 441 шт: термін постачання 14-30 дні (днів) |
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NC7SP125P5X | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC70-5; 0.9uA Case: SC70-5 Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Quiescent current: 0.9µA Kind of package: reel; tape Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Mounting: SMD Supply voltage: 0.9...3.6V DC Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FXWA9306L8X | ONSEMI |
Category: Level translatorsDescription: IC: digital; 3-state,logic level voltage translator; Ch: 2; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator Number of channels: 2 Supply voltage: 1...5.5V DC Mounting: SMD Case: MicorPAK8 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Kind of output: open drain |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
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NTP011N15MC | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 74.3A; Idm: 374A; 136.4W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 136.4W Case: TO220-3 Mounting: THT Pulsed drain current: 374A Gate charge: 37nC Drain current: 74.3A Kind of channel: enhancement Drain-source voltage: 150V Gate-source voltage: ±20V Kind of package: tube On-state resistance: 10.9mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FDMC0310AS | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Pulsed drain current: 100A Power dissipation: 36W Case: MLP8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FJL4315OTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 17A Power dissipation: 150W Case: TO264 Current gain: 55...160 Mounting: THT Kind of package: tube Frequency: 30MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MRA4005T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.1V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAV4109V-GT2 | ONSEMI |
Category: LED driversDescription: IC: driver; LED driver; SO16; 175mA; Ch: 3; 3÷5.5VDC; Iout max: 200mA Application: automotive industry Supply voltage: 3...5.5V DC Maximum output current: 200mA Output current: 0.175A Type of integrated circuit: driver Operating temperature: -40...125°C Kind of package: reel; tape Case: SO16 Kind of integrated circuit: LED driver Number of channels: 3 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGF1M | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 0.5µs Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Features of semiconductor devices: fast switching Max. off-state voltage: 1kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Capacitance: 8.5pF Type of diode: rectifying |
на замовлення 7000 шт: термін постачання 14-30 дні (днів) |
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RGF1D | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 150ns Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Features of semiconductor devices: fast switching Max. off-state voltage: 200V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Capacitance: 8.5pF Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGF1A | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 150ns Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Features of semiconductor devices: fast switching Max. off-state voltage: 50V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Capacitance: 8.5pF Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGF1B | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 150ns Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Features of semiconductor devices: fast switching Max. off-state voltage: 0.1kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Capacitance: 8.5pF Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGF1J | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 250ns Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Features of semiconductor devices: fast switching Max. off-state voltage: 0.6kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Capacitance: 8.5pF Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGF1K | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; 500ns; SMA; Ufmax: 1.3V; reel,tape Reverse recovery time: 0.5µs Mounting: SMD Max. forward voltage: 1.3V Max. off-state voltage: 0.8kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NRVRGF1D | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 150ns Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Application: automotive industry Max. off-state voltage: 200V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NRVRGF1J | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 250ns Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Application: automotive industry Max. off-state voltage: 0.6kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: rectifying |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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NRVRGF1M | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1000V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Reverse recovery time: 0.5µs Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 1.3V Power dissipation: 1.76W Application: automotive industry Max. off-state voltage: 1kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCH47N60-F133 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 0.27µC |
на замовлення 421 шт: термін постачання 14-30 дні (днів) |
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| FCH47N60F-F133 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.21µC |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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FCA47N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.27µC |
на замовлення 29 шт: термін постачання 14-30 дні (днів) |
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FCP7N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 83W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 21A Gate charge: 23nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FCI7N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 83W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 21A Gate charge: 23nC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
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FCA47N60-F109 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.27µC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FCA47N60F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO3P Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 141A Gate charge: 0.21µC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NL27WZ86USG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA Type of integrated circuit: digital Kind of gate: XOR Number of channels: dual; 2 Number of inputs: 2 Mounting: SMD Case: US8 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 10µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CPH6001A-TL-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 12V; 0.1A; 0.8W; CPH6 Mounting: SMD Case: CPH6 Kind of package: reel; tape Collector-emitter voltage: 12V Power dissipation: 0.8W Polarisation: bipolar Kind of transistor: RF Type of transistor: NPN Collector current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CPH6003A-TL-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 12V; 0.15A; 0.8W; CPH6 Mounting: SMD Case: CPH6 Kind of package: reel; tape Collector-emitter voltage: 12V Power dissipation: 0.8W Polarisation: bipolar Kind of transistor: RF Type of transistor: NPN Frequency: 7GHz Collector current: 0.15A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BZX79C2V7-T50A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: BZX79C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR8170TFSTAG | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; WDFN8; SMD Type of diode: Schottky rectifying Case: WDFN8 Mounting: SMD Max. forward voltage: 0.89V Max. forward impulse current: 140A Leakage current: 30µA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
| NRVTS360ETFSTAG | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; WDFN8; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: WDFN8 Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.9V Max. load current: 6A Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||||
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H11AV1AM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Mounting: THT Insulation voltage: 4.17kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Turn-on time: 15µs Case: DIP6 Turn-off time: 15µs Number of channels: 1 Collector-emitter voltage: 70V CTR@If: 100-300%@10mA Kind of output: transistor |
на замовлення 1667 шт: термін постачання 14-30 дні (днів) |
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FDH300ATR | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape |
на замовлення 6310 шт: термін постачання 14-30 дні (днів) |
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FDH300A | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; bulk Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: bulk |
на замовлення 3030 шт: термін постачання 14-30 дні (днів) |
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| FDH300TR | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape Type of diode: switching Mounting: THT Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| MC74VHC4051DTR2G |
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Виробник: ONSEMI
Category: Integrated circuits - Unclassified
Description: IC: digital; SMD; -55÷125°C; TSSOP16; VHC; Ch: 1; OUT: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of inputs: 8
Mounting: SMD
Family: VHC
Number of outputs: 1
Case: TSSOP16
Number of channels: 1
Operating temperature: -55...125°C
Category: Integrated circuits - Unclassified
Description: IC: digital; SMD; -55÷125°C; TSSOP16; VHC; Ch: 1; OUT: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of inputs: 8
Mounting: SMD
Family: VHC
Number of outputs: 1
Case: TSSOP16
Number of channels: 1
Operating temperature: -55...125°C
на замовлення 7500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 10.30 грн |
| NCV47700PDAJR2G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.35A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5...20V
Kind of package: reel; tape
Case: SO8
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.35A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5...20V
Kind of package: reel; tape
Case: SO8
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| NLV17SZ74USG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; SMD; US8; 10uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: US8
Operating temperature: -55...125°C
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; SMD; US8; 10uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: US8
Operating temperature: -55...125°C
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| BDK-GEVK |
Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; Comp: AX8052F100,RSL10
Type of development kit: evaluation
Kit contents: cable USB A plug - USB micro plug; prototype board
Components: AX8052F100; RSL10
Programmers and development kits features: Arduino Shield compatible; Bluetooth board
Interface: GPIO; I2C; SPI; UART
Connection: CR2032; pin strips; Pmod socket; USB micro
Category: Development kits - others
Description: Dev.kit: evaluation; Comp: AX8052F100,RSL10
Type of development kit: evaluation
Kit contents: cable USB A plug - USB micro plug; prototype board
Components: AX8052F100; RSL10
Programmers and development kits features: Arduino Shield compatible; Bluetooth board
Interface: GPIO; I2C; SPI; UART
Connection: CR2032; pin strips; Pmod socket; USB micro
товару немає в наявності
В кошику
од. на суму грн.
| MOC3023SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 400V
Kind of output: without zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 400V
Kind of output: without zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
на замовлення 1330 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.38 грн |
| 13+ | 33.55 грн |
| 25+ | 30.19 грн |
| 50+ | 27.76 грн |
| 100+ | 25.33 грн |
| 500+ | 19.79 грн |
| 1000+ | 18.87 грн |
| FDD86113LZ |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 3.1W; DPAK,TO252
On-state resistance: 0.104Ω
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 6nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 4.2A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: DPAK; TO252
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 3.1W; DPAK,TO252
On-state resistance: 0.104Ω
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 6nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 4.2A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: DPAK; TO252
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SBC847BDW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 2034 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 17.16 грн |
| 38+ | 11.32 грн |
| 44+ | 9.64 грн |
| 75+ | 7.88 грн |
| 100+ | 7.55 грн |
| 1000+ | 7.21 грн |
| BC847BDW1T3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SBC847BDW1T3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| KSE13003H2ASTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1.5A
Power dissipation: 20W
Case: TO126ISO
Pulsed collector current: 3A
Current gain: 14...21
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1.5A
Power dissipation: 20W
Case: TO126ISO
Pulsed collector current: 3A
Current gain: 14...21
Mounting: THT
Kind of package: tube
Frequency: 4MHz
товару немає в наявності
В кошику
од. на суму грн.
| SZESD1L001W1T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 16.5V; double x2,common anode; SC88; Ch: 4
Mounting: SMD
Breakdown voltage: 16.5V
Application: automotive industry
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: common anode; double x2
Case: SC88
Type of diode: TVS array
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; 16.5V; double x2,common anode; SC88; Ch: 4
Mounting: SMD
Breakdown voltage: 16.5V
Application: automotive industry
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: common anode; double x2
Case: SC88
Type of diode: TVS array
Number of channels: 4
товару немає в наявності
В кошику
од. на суму грн.
| NCV6323BMTAATBG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WDFN8; SMD; reel,tape; automotive industry
Mounting: SMD
Type of integrated circuit: PMIC
Application: automotive industry
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WDFN8; SMD; reel,tape; automotive industry
Mounting: SMD
Type of integrated circuit: PMIC
Application: automotive industry
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: DC/DC converter
товару немає в наявності
В кошику
од. на суму грн.
| NCV6323BMTAAWTBG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WDFN8; SMD; reel,tape; automotive industry
Mounting: SMD
Type of integrated circuit: PMIC
Application: automotive industry
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WDFN8; SMD; reel,tape; automotive industry
Mounting: SMD
Type of integrated circuit: PMIC
Application: automotive industry
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: DC/DC converter
товару немає в наявності
В кошику
од. на суму грн.
| NCV6323DMTAATBG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WDFN8; SMD; reel,tape; automotive industry
Mounting: SMD
Type of integrated circuit: PMIC
Application: automotive industry
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WDFN8; SMD; reel,tape; automotive industry
Mounting: SMD
Type of integrated circuit: PMIC
Application: automotive industry
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: DC/DC converter
товару немає в наявності
В кошику
од. на суму грн.
| NCV6323DMTAAWTBG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WDFN8; SMD; reel,tape; automotive industry
Mounting: SMD
Type of integrated circuit: PMIC
Application: automotive industry
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WDFN8; SMD; reel,tape; automotive industry
Mounting: SMD
Type of integrated circuit: PMIC
Application: automotive industry
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: DC/DC converter
товару немає в наявності
В кошику
од. на суму грн.
| FOD817B3S |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Number of pins: 4
Collector-emitter voltage: 70V
Kind of output: transistor
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 18µs
Case: SMD4
Turn-off time: 18µs
Number of channels: 1
Collector current: 50mA
Mounting: SMD
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Number of pins: 4
Collector-emitter voltage: 70V
Kind of output: transistor
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 18µs
Case: SMD4
Turn-off time: 18µs
Number of channels: 1
Collector current: 50mA
Mounting: SMD
Manufacturer series: FOD817
на замовлення 8000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 8.13 грн |
| FSSD06BQX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: multiplexer; SPST; Ch: 1; MLP24; 1.65÷3.6V; 1uA
Type of integrated circuit: multiplexer
Output configuration: SPST
Number of channels: 1
Case: MLP24
Supply voltage: 1.65...3.6V
Mounting: SMD
Resistance: 2.5Ω
Operating temperature: -40...85°C
Quiescent current: 1µA
Category: Analog multiplexers and switches
Description: IC: multiplexer; SPST; Ch: 1; MLP24; 1.65÷3.6V; 1uA
Type of integrated circuit: multiplexer
Output configuration: SPST
Number of channels: 1
Case: MLP24
Supply voltage: 1.65...3.6V
Mounting: SMD
Resistance: 2.5Ω
Operating temperature: -40...85°C
Quiescent current: 1µA
на замовлення 2380 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 55.09 грн |
| 14+ | 31.37 грн |
| 100+ | 27.68 грн |
| 250+ | 25.75 грн |
| 1000+ | 24.07 грн |
| NC7SZ157P6X |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,non-inverting; Ch: 1; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Number of channels: 1
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Kind of integrated circuit: multiplexer; non-inverting
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,non-inverting; Ch: 1; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Number of channels: 1
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Kind of integrated circuit: multiplexer; non-inverting
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.61 грн |
| 132+ | 3.19 грн |
| 144+ | 2.92 грн |
| 152+ | 2.77 грн |
| 157+ | 2.68 грн |
| 250+ | 2.55 грн |
| 500+ | 2.43 грн |
| 1000+ | 2.34 грн |
| RS1D |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
на замовлення 6409 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.45 грн |
| 36+ | 11.91 грн |
| 39+ | 10.99 грн |
| 50+ | 8.97 грн |
| 100+ | 8.39 грн |
| 250+ | 7.97 грн |
| RS1DFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| GBPC3502W |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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| GBPC3501 |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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| GBPC3504 |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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| DAN222M3T5G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SOT723; Ufmax: 1.2V; 260mW
Capacitance: 3.5pF
Mounting: SMD
Max. forward voltage: 1.2V
Power dissipation: 0.26W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 80V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Case: SOT723
Type of diode: rectifying
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SOT723; Ufmax: 1.2V; 260mW
Capacitance: 3.5pF
Mounting: SMD
Max. forward voltage: 1.2V
Power dissipation: 0.26W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 80V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Case: SOT723
Type of diode: rectifying
Reverse recovery time: 4ns
на замовлення 6292 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 220+ | 2.06 грн |
| 278+ | 1.51 грн |
| 295+ | 1.43 грн |
| 313+ | 1.34 грн |
| 500+ | 1.27 грн |
| DAN222T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Power dissipation: 0.15W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SC75
Capacitance: 3.5pF
Type of diode: rectifying
Reverse recovery time: 4ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.2V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Power dissipation: 0.15W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SC75
Capacitance: 3.5pF
Type of diode: rectifying
Reverse recovery time: 4ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.2V
на замовлення 2823 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.03 грн |
| 70+ | 6.04 грн |
| 100+ | 4.23 грн |
| 116+ | 3.62 грн |
| 500+ | 2.63 грн |
| 1000+ | 2.27 грн |
| 1500+ | 2.11 грн |
| DAN222G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Mounting: SMD
Max. forward voltage: 1.2V
Features of semiconductor devices: small signal
Max. off-state voltage: 80V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SOT416
Type of diode: switching
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Mounting: SMD
Max. forward voltage: 1.2V
Features of semiconductor devices: small signal
Max. off-state voltage: 80V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SOT416
Type of diode: switching
Reverse recovery time: 4ns
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| MJE5742G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 400V; 8A; 2W; TO220AB
Power dissipation: 2W
Type of transistor: NPN
Kind of package: tube
Case: TO220AB
Collector current: 8A
Mounting: THT
Collector-emitter voltage: 400V
Polarisation: bipolar
Kind of transistor: Darlington
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 400V; 8A; 2W; TO220AB
Power dissipation: 2W
Type of transistor: NPN
Kind of package: tube
Case: TO220AB
Collector current: 8A
Mounting: THT
Collector-emitter voltage: 400V
Polarisation: bipolar
Kind of transistor: Darlington
на замовлення 441 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.63 грн |
| 6+ | 79.67 грн |
| 10+ | 75.48 грн |
| NC7SP125P5X |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC70-5; 0.9uA
Case: SC70-5
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 0.9µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Supply voltage: 0.9...3.6V DC
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC70-5; 0.9uA
Case: SC70-5
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 0.9µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Supply voltage: 0.9...3.6V DC
Type of integrated circuit: digital
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| FXWA9306L8X |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; 3-state,logic level voltage translator; Ch: 2; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator
Number of channels: 2
Supply voltage: 1...5.5V DC
Mounting: SMD
Case: MicorPAK8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Category: Level translators
Description: IC: digital; 3-state,logic level voltage translator; Ch: 2; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator
Number of channels: 2
Supply voltage: 1...5.5V DC
Mounting: SMD
Case: MicorPAK8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
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Мінімальне замовлення: 5000 шт
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| NTP011N15MC |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74.3A; Idm: 374A; 136.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 136.4W
Case: TO220-3
Mounting: THT
Pulsed drain current: 374A
Gate charge: 37nC
Drain current: 74.3A
Kind of channel: enhancement
Drain-source voltage: 150V
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 10.9mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74.3A; Idm: 374A; 136.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 136.4W
Case: TO220-3
Mounting: THT
Pulsed drain current: 374A
Gate charge: 37nC
Drain current: 74.3A
Kind of channel: enhancement
Drain-source voltage: 150V
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 10.9mΩ
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| FDMC0310AS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 100A
Power dissipation: 36W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 100A
Power dissipation: 36W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FJL4315OTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 150W
Case: TO264
Current gain: 55...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 150W
Case: TO264
Current gain: 55...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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| MRA4005T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
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| CAV4109V-GT2 |
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Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SO16; 175mA; Ch: 3; 3÷5.5VDC; Iout max: 200mA
Application: automotive industry
Supply voltage: 3...5.5V DC
Maximum output current: 200mA
Output current: 0.175A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SO16
Kind of integrated circuit: LED driver
Number of channels: 3
Mounting: SMD
Category: LED drivers
Description: IC: driver; LED driver; SO16; 175mA; Ch: 3; 3÷5.5VDC; Iout max: 200mA
Application: automotive industry
Supply voltage: 3...5.5V DC
Maximum output current: 200mA
Output current: 0.175A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SO16
Kind of integrated circuit: LED driver
Number of channels: 3
Mounting: SMD
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| RGF1M |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
на замовлення 7000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.80 грн |
| 19+ | 23.15 грн |
| 22+ | 19.62 грн |
| 100+ | 10.73 грн |
| 500+ | 10.48 грн |
| RGF1D |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 200V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 200V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
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| RGF1A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 50V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 50V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
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| RGF1B |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
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| RGF1J |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 250ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 250ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 8.5pF
Type of diode: rectifying
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| RGF1K |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SMA; Ufmax: 1.3V; reel,tape
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward voltage: 1.3V
Max. off-state voltage: 0.8kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SMA; Ufmax: 1.3V; reel,tape
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward voltage: 1.3V
Max. off-state voltage: 0.8kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
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| NRVRGF1D |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 150ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
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| NRVRGF1J |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 250ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 250ns
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
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Мінімальне замовлення: 3 шт
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| NRVRGF1M |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Application: automotive industry
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Reverse recovery time: 0.5µs
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Power dissipation: 1.76W
Application: automotive industry
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: rectifying
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| FCH47N60-F133 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
на замовлення 421 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 859.81 грн |
| 5+ | 663.37 грн |
| FCH47N60F-F133 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 833.62 грн |
| 10+ | 685.18 грн |
| FCA47N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 945.61 грн |
| 10+ | 753.11 грн |
| FCP7N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
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| FCI7N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
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Мінімальне замовлення: 1000 шт
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| FCA47N60-F109 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.27µC
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| FCA47N60F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 141A
Gate charge: 0.21µC
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| NL27WZ86USG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; SMD; US8; 1.65÷5.5VDC; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: dual; 2
Number of inputs: 2
Mounting: SMD
Case: US8
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
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| CPH6001A-TL-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.1A; 0.8W; CPH6
Mounting: SMD
Case: CPH6
Kind of package: reel; tape
Collector-emitter voltage: 12V
Power dissipation: 0.8W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.1A; 0.8W; CPH6
Mounting: SMD
Case: CPH6
Kind of package: reel; tape
Collector-emitter voltage: 12V
Power dissipation: 0.8W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Collector current: 0.1A
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| CPH6003A-TL-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.15A; 0.8W; CPH6
Mounting: SMD
Case: CPH6
Kind of package: reel; tape
Collector-emitter voltage: 12V
Power dissipation: 0.8W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Frequency: 7GHz
Collector current: 0.15A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.15A; 0.8W; CPH6
Mounting: SMD
Case: CPH6
Kind of package: reel; tape
Collector-emitter voltage: 12V
Power dissipation: 0.8W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Frequency: 7GHz
Collector current: 0.15A
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| BZX79C2V7-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
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| MBR8170TFSTAG |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. forward voltage: 0.89V
Max. forward impulse current: 140A
Leakage current: 30µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. forward voltage: 0.89V
Max. forward impulse current: 140A
Leakage current: 30µA
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Мінімальне замовлення: 1500 шт
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| NRVTS360ETFSTAG |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: WDFN8
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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Мінімальне замовлення: 3 шт
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| H11AV1AM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Mounting: THT
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 15µs
Case: DIP6
Turn-off time: 15µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 100-300%@10mA
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Mounting: THT
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 15µs
Case: DIP6
Turn-off time: 15µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 100-300%@10mA
Kind of output: transistor
на замовлення 1667 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.55 грн |
| 16+ | 27.42 грн |
| 50+ | 22.48 грн |
| FDH300ATR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
на замовлення 6310 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 73+ | 5.79 грн |
| 110+ | 3.84 грн |
| 500+ | 2.92 грн |
| 1000+ | 2.59 грн |
| 2000+ | 2.33 грн |
| 2500+ | 2.26 грн |
| 5000+ | 2.07 грн |
| FDH300A |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; bulk
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; bulk
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
на замовлення 3030 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 81+ | 5.20 грн |
| 93+ | 4.53 грн |
| 123+ | 3.42 грн |
| 500+ | 2.76 грн |
| 1000+ | 2.50 грн |
| 2000+ | 2.36 грн |
| FDH300TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
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