| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| NVTFS6H880NTAG | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFN8 Pulsed drain current: 80A Power dissipation: 16W Gate charge: 6.9nC Polarisation: unipolar Drain current: 21A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN8 On-state resistance: 32mΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |
| NVTFS6H888NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 47A; 9.2W; WDFN8 Pulsed drain current: 47A Power dissipation: 9.2W Gate charge: 4.7nC Polarisation: unipolar Drain current: 12A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN8 On-state resistance: 55mΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| NVTFS6H880NTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFN8
Pulsed drain current: 80A
Power dissipation: 16W
Gate charge: 6.9nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 32mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21A; Idm: 80A; 16W; WDFN8
Pulsed drain current: 80A
Power dissipation: 16W
Gate charge: 6.9nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 32mΩ
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| NVTFS6H888NTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 47A; 9.2W; WDFN8
Pulsed drain current: 47A
Power dissipation: 9.2W
Gate charge: 4.7nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 55mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; Idm: 47A; 9.2W; WDFN8
Pulsed drain current: 47A
Power dissipation: 9.2W
Gate charge: 4.7nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 55mΩ
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.