Продукція > PANJIT INTERNATIONAL INC. > Всі товари виробника PANJIT INTERNATIONAL INC. (11435) > Сторінка 89 з 191

Обрати Сторінку:   [  << Попередня Сторінка ]  1 19 38 57 76 84 85 86 87 88 89 90 91 92 93 94 95 114 133 152 171 190 191  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
PJS6421-AU_S1_000A1 PJS6421-AU_S1_000A1 Panjit International Inc. PJS6421-AU.pdf Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
на замовлення 1799 шт:
термін постачання 21-31 дні (днів)
11+29.66 грн
13+24.88 грн
100+18.60 грн
500+13.72 грн
1000+10.60 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
PJS6413_S1_00001 Panjit International Inc. Description: 20V P-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику  од. на суму  грн.
PJS6413_S1_00001 Panjit International Inc. Description: 20V P-CHANNEL ENHANCEMENT MODE M
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
10+32.00 грн
13+24.80 грн
100+16.88 грн
500+11.88 грн
1000+8.91 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
PJS6839_S1_00001 PJS6839_S1_00001 Panjit International Inc. PJS6839.pdf Description: MOSFET 2P-CH 60V 0.3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+6.34 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PJS6839_S1_00001 PJS6839_S1_00001 Panjit International Inc. PJS6839.pdf Description: MOSFET 2P-CH 60V 0.3A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
на замовлення 5287 шт:
термін постачання 21-31 дні (днів)
11+29.66 грн
18+17.21 грн
100+10.90 грн
500+7.63 грн
1000+6.79 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
PJS6421_S1_00001 PJS6421_S1_00001 Panjit International Inc. PJS6421.pdf Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PJS6421_S1_00001 PJS6421_S1_00001 Panjit International Inc. PJS6421.pdf Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
на замовлення 2127 шт:
термін постачання 21-31 дні (днів)
9+35.13 грн
12+25.93 грн
100+16.75 грн
500+12.43 грн
1000+10.10 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
PCDB1065G1_T0_00001 Panjit International Inc. Description: 650V SIC SCHOTTKY BARRIER DIODE
товару немає в наявності
В кошику  од. на суму  грн.
PCDB1065G1_T0_00001 Panjit International Inc. Description: 650V SIC SCHOTTKY BARRIER DIODE
товару немає в наявності
В кошику  од. на суму  грн.
BD650CS_L2_00001 BD650CS_L2_00001 Panjit International Inc. BD640CS_SERIES.pdf Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BD650CS_L2_00001 BD650CS_L2_00001 Panjit International Inc. BD640CS_SERIES.pdf Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BD650CS_S2_00001 BD650CS_S2_00001 Panjit International Inc. BD640CS_SERIES.pdf Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BD650CS_S2_00001 BD650CS_S2_00001 Panjit International Inc. BD640CS_SERIES.pdf Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
ER1A_R1_00001 Panjit International Inc. Description: SURFACE MOUNT SUPER FAST RECOVER
товару немає в наявності
В кошику  од. на суму  грн.
ER1A_R1_00001 Panjit International Inc. Description: SURFACE MOUNT SUPER FAST RECOVER
товару немає в наявності
В кошику  од. на суму  грн.
ER1AF_R1_00001 ER1AF_R1_00001 Panjit International Inc. ER1AF_SERIES.pdf Description: DIODE GEN PURP 50V 1A SMBF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
ER1AF_R1_00001 ER1AF_R1_00001 Panjit International Inc. ER1AF_SERIES.pdf Description: DIODE GEN PURP 50V 1A SMBF
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
ER1AAFC_R1_00001 ER1AAFC_R1_00001 Panjit International Inc. ER1AAFC_SERIES.pdf Description: DIODE GEN PURP 50V 1A SMAF-C
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
ER1AAFC_R1_00001 ER1AAFC_R1_00001 Panjit International Inc. ER1AAFC_SERIES.pdf Description: DIODE GEN PURP 50V 1A SMAF-C
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
GS1AWG_R1_00001 GS1AWG_R1_00001 Panjit International Inc. GS1AWG_SERIES.pdf Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
GS1AWG_R1_00001 GS1AWG_R1_00001 Panjit International Inc. GS1AWG_SERIES.pdf Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
на замовлення 1227 шт:
термін постачання 21-31 дні (днів)
29+10.93 грн
48+6.39 грн
100+3.92 грн
500+2.67 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
PJMF990N65EC_T0_00001 PJMF990N65EC_T0_00001 Panjit International Inc. PJMF990N65EC.pdf Description: 650V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 22.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2+188.90 грн
10+56.45 грн
100+35.58 грн
500+26.05 грн
1000+23.69 грн
2000+21.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SD830YS_L2_00001 SD830YS_L2_00001 Panjit International Inc. SD820YS_SERIES.pdf Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
SD830YS_L2_00001 SD830YS_L2_00001 Panjit International Inc. SD820YS_SERIES.pdf Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
4+86.64 грн
10+52.47 грн
100+34.65 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SD830S_L2_00001 SD830S_L2_00001 Panjit International Inc. SD820S_SERIES.pdf Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
SD830S_L2_00001 SD830S_L2_00001 Panjit International Inc. SD820S_SERIES.pdf Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 2998 шт:
термін постачання 21-31 дні (днів)
6+60.88 грн
10+50.89 грн
100+35.20 грн
500+27.61 грн
1000+23.49 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PZD22B12C-AU_R1_000A1 PZD22B12C-AU_R1_000A1 Panjit International Inc. PZD22B2V4C-AU_SERIES.pdf Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PZD22B12C-AU_R1_000A1 PZD22B12C-AU_R1_000A1 Panjit International Inc. PZD22B2V4C-AU_SERIES.pdf Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
20+15.61 грн
29+10.37 грн
100+5.32 грн
500+4.76 грн
1000+4.52 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
5KP12CA_R2_00001 5KP12CA_R2_00001 Panjit International Inc. 5KP_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
5KP12CA_R2_00001 5KP12CA_R2_00001 Panjit International Inc. 5KP_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
BZT52-B4V3_R1_00001 BZT52-B4V3_R1_00001 Panjit International Inc. BZT52-B2V4S_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2.09%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику  од. на суму  грн.
BZT52-B4V3_R1_00001 BZT52-B4V3_R1_00001 Panjit International Inc. BZT52-B2V4S_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2.09%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
20+16.39 грн
21+14.66 грн
100+7.97 грн
500+4.60 грн
1000+3.14 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BZT52-B4V3S_R1_00001 BZT52-B4V3S_R1_00001 Panjit International Inc. Description: SURFACE MOUNT SILICON ZENER DIOD
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+2.88 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BZT52-B4V3S_R1_00001 BZT52-B4V3S_R1_00001 Panjit International Inc. Description: SURFACE MOUNT SILICON ZENER DIOD
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
17+18.73 грн
21+14.96 грн
100+7.91 грн
500+4.89 грн
1000+3.32 грн
2000+3.00 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BZT52-B4V3-AU_R1_000A1 BZT52-B4V3-AU_R1_000A1 Panjit International Inc. Description: SURFACE MOUNT SILICON ZENER DIOD
товару немає в наявності
В кошику  од. на суму  грн.
BZT52-B4V3-AU_R1_000A1 BZT52-B4V3-AU_R1_000A1 Panjit International Inc. Description: SURFACE MOUNT SILICON ZENER DIOD
товару немає в наявності
В кошику  од. на суму  грн.
BZT52-B4V3S-AU_R1_000A1 BZT52-B4V3S-AU_R1_000A1 Panjit International Inc. Description: SURFACE MOUNT SILICON ZENER DIOD
товару немає в наявності
В кошику  од. на суму  грн.
BZT52-B4V3S-AU_R1_000A1 BZT52-B4V3S-AU_R1_000A1 Panjit International Inc. Description: SURFACE MOUNT SILICON ZENER DIOD
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ7.0A_R1_00001 P6SMBJ7.0A_R1_00001 Panjit International Inc. P6SMBJ_SERIES.pdf Description: TVS DIODE 7VWM 12VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ7.0A_R1_00001 P6SMBJ7.0A_R1_00001 Panjit International Inc. P6SMBJ_SERIES.pdf Description: TVS DIODE 7VWM 12VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 634 шт:
термін постачання 21-31 дні (днів)
12+26.54 грн
20+15.71 грн
100+9.91 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
1.5KE30CAS_AY_00001 1.5KE30CAS_AY_00001 Panjit International Inc. Description: TVS 1500W 30V BIDIR DO-201AE
Packaging: Tape & Box (TB)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-201AE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
PG2010R_R2_00001 PG2010R_R2_00001 Panjit International Inc. PG200_SERIES.pdf Description: DIODE STANDARD 1000V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
PG2010R_R2_00001 PG2010R_R2_00001 Panjit International Inc. PG200_SERIES.pdf Description: DIODE STANDARD 1000V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
PG2010_R2_00001 PG2010_R2_00001 Panjit International Inc. PG200_SERIES.pdf Description: DIODE GEN PURP 1KV 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
PG2010_R2_00001 PG2010_R2_00001 Panjit International Inc. PG200_SERIES.pdf Description: DIODE GEN PURP 1KV 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
PJD35N06A_L2_00001 PJD35N06A_L2_00001 Panjit International Inc. PJx35N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
PJD35N06A_L2_00001 PJD35N06A_L2_00001 Panjit International Inc. PJx35N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
на замовлення 1040 шт:
термін постачання 21-31 дні (днів)
6+55.42 грн
10+33.60 грн
100+22.47 грн
500+16.72 грн
1000+15.08 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PJD11N06A-AU_L2_000A1 PJD11N06A-AU_L2_000A1 Panjit International Inc. PJD11N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJD11N06A-AU_L2_000A1 PJD11N06A-AU_L2_000A1 Panjit International Inc. PJD11N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2952 шт:
термін постачання 21-31 дні (днів)
6+53.08 грн
10+31.72 грн
100+20.53 грн
500+14.71 грн
1000+13.25 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PJD11N06A_L2_00001 PJD11N06A_L2_00001 Panjit International Inc. PJD11N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PJW5N06A_R2_00001 PJW5N06A_R2_00001 Panjit International Inc. PJW5N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PJW5N06A_R2_00001 PJW5N06A_R2_00001 Panjit International Inc. PJW5N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PJD35N06A-AU_L2_000A1 PJD35N06A-AU_L2_000A1 Panjit International Inc. PJD35N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJW5N06A-AU_R2_000A1 PJW5N06A-AU_R2_000A1 Panjit International Inc. PJW5N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 3.72W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJW5N06A-AU_R2_000A1 PJW5N06A-AU_R2_000A1 Panjit International Inc. PJW5N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 3.72W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC100AS_R1_00001 1.5SMC100AS_R1_00001 Panjit International Inc. 1.5SMC10AS_SERIES.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: SMC (DO-214AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC100AS_R1_00001 1.5SMC100AS_R1_00001 Panjit International Inc. 1.5SMC10AS_SERIES.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: SMC (DO-214AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 790 шт:
термін постачання 21-31 дні (днів)
8+44.49 грн
10+36.23 грн
100+25.17 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
P6SMBJ13AS_R1_00001 P6SMBJ13AS_R1_00001 Panjit International Inc. P6SMBJ8.5AS_SERIES.pdf Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+7.08 грн
1600+6.09 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
P6SMBJ13AS_R1_00001 P6SMBJ13AS_R1_00001 Panjit International Inc. P6SMBJ8.5AS_SERIES.pdf Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
10+33.56 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
P6SMBJ51AS_R1_00001 P6SMBJ51AS_R1_00001 Panjit International Inc. P6SMBJ8.5AS_SERIES.pdf Description: TVS DIODE 51VWM 82.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+8.31 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
PJS6421-AU_S1_000A1 PJS6421-AU.pdf
PJS6421-AU_S1_000A1
Виробник: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
на замовлення 1799 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+29.66 грн
13+24.88 грн
100+18.60 грн
500+13.72 грн
1000+10.60 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
PJS6413_S1_00001
Виробник: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику  од. на суму  грн.
PJS6413_S1_00001
Виробник: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.00 грн
13+24.80 грн
100+16.88 грн
500+11.88 грн
1000+8.91 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
PJS6839_S1_00001 PJS6839.pdf
PJS6839_S1_00001
Виробник: Panjit International Inc.
Description: MOSFET 2P-CH 60V 0.3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.34 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PJS6839_S1_00001 PJS6839.pdf
PJS6839_S1_00001
Виробник: Panjit International Inc.
Description: MOSFET 2P-CH 60V 0.3A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
на замовлення 5287 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+29.66 грн
18+17.21 грн
100+10.90 грн
500+7.63 грн
1000+6.79 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
PJS6421_S1_00001 PJS6421.pdf
PJS6421_S1_00001
Виробник: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PJS6421_S1_00001 PJS6421.pdf
PJS6421_S1_00001
Виробник: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
на замовлення 2127 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+35.13 грн
12+25.93 грн
100+16.75 грн
500+12.43 грн
1000+10.10 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
PCDB1065G1_T0_00001
Виробник: Panjit International Inc.
Description: 650V SIC SCHOTTKY BARRIER DIODE
товару немає в наявності
В кошику  од. на суму  грн.
PCDB1065G1_T0_00001
Виробник: Panjit International Inc.
Description: 650V SIC SCHOTTKY BARRIER DIODE
товару немає в наявності
В кошику  од. на суму  грн.
BD650CS_L2_00001 BD640CS_SERIES.pdf
BD650CS_L2_00001
Виробник: Panjit International Inc.
Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BD650CS_L2_00001 BD640CS_SERIES.pdf
BD650CS_L2_00001
Виробник: Panjit International Inc.
Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BD650CS_S2_00001 BD640CS_SERIES.pdf
BD650CS_S2_00001
Виробник: Panjit International Inc.
Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BD650CS_S2_00001 BD640CS_SERIES.pdf
BD650CS_S2_00001
Виробник: Panjit International Inc.
Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
ER1A_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SUPER FAST RECOVER
товару немає в наявності
В кошику  од. на суму  грн.
ER1A_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SUPER FAST RECOVER
товару немає в наявності
В кошику  од. на суму  грн.
ER1AF_R1_00001 ER1AF_SERIES.pdf
ER1AF_R1_00001
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 50V 1A SMBF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
ER1AF_R1_00001 ER1AF_SERIES.pdf
ER1AF_R1_00001
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 50V 1A SMBF
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
ER1AAFC_R1_00001 ER1AAFC_SERIES.pdf
ER1AAFC_R1_00001
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 50V 1A SMAF-C
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
ER1AAFC_R1_00001 ER1AAFC_SERIES.pdf
ER1AAFC_R1_00001
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 50V 1A SMAF-C
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
GS1AWG_R1_00001 GS1AWG_SERIES.pdf
GS1AWG_R1_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
GS1AWG_R1_00001 GS1AWG_SERIES.pdf
GS1AWG_R1_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
на замовлення 1227 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+10.93 грн
48+6.39 грн
100+3.92 грн
500+2.67 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
PJMF990N65EC_T0_00001 PJMF990N65EC.pdf
PJMF990N65EC_T0_00001
Виробник: Panjit International Inc.
Description: 650V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 22.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+188.90 грн
10+56.45 грн
100+35.58 грн
500+26.05 грн
1000+23.69 грн
2000+21.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SD830YS_L2_00001 SD820YS_SERIES.pdf
SD830YS_L2_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
SD830YS_L2_00001 SD820YS_SERIES.pdf
SD830YS_L2_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+86.64 грн
10+52.47 грн
100+34.65 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SD830S_L2_00001 SD820S_SERIES.pdf
SD830S_L2_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
SD830S_L2_00001 SD820S_SERIES.pdf
SD830S_L2_00001
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 2998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.88 грн
10+50.89 грн
100+35.20 грн
500+27.61 грн
1000+23.49 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PZD22B12C-AU_R1_000A1 PZD22B2V4C-AU_SERIES.pdf
PZD22B12C-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PZD22B12C-AU_R1_000A1 PZD22B2V4C-AU_SERIES.pdf
PZD22B12C-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+15.61 грн
29+10.37 грн
100+5.32 грн
500+4.76 грн
1000+4.52 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
5KP12CA_R2_00001 5KP_SERIES.pdf
5KP12CA_R2_00001
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
5KP12CA_R2_00001 5KP_SERIES.pdf
5KP12CA_R2_00001
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
BZT52-B4V3_R1_00001 BZT52-B2V4S_SERIES.pdf
BZT52-B4V3_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2.09%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику  од. на суму  грн.
BZT52-B4V3_R1_00001 BZT52-B2V4S_SERIES.pdf
BZT52-B4V3_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2.09%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+16.39 грн
21+14.66 грн
100+7.97 грн
500+4.60 грн
1000+3.14 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BZT52-B4V3S_R1_00001
BZT52-B4V3S_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+2.88 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BZT52-B4V3S_R1_00001
BZT52-B4V3S_R1_00001
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+18.73 грн
21+14.96 грн
100+7.91 грн
500+4.89 грн
1000+3.32 грн
2000+3.00 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BZT52-B4V3-AU_R1_000A1
BZT52-B4V3-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
товару немає в наявності
В кошику  од. на суму  грн.
BZT52-B4V3-AU_R1_000A1
BZT52-B4V3-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
товару немає в наявності
В кошику  од. на суму  грн.
BZT52-B4V3S-AU_R1_000A1
BZT52-B4V3S-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
товару немає в наявності
В кошику  од. на суму  грн.
BZT52-B4V3S-AU_R1_000A1
BZT52-B4V3S-AU_R1_000A1
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ7.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ7.0A_R1_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 7VWM 12VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ7.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ7.0A_R1_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 7VWM 12VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 634 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+26.54 грн
20+15.71 грн
100+9.91 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
1.5KE30CAS_AY_00001
1.5KE30CAS_AY_00001
Виробник: Panjit International Inc.
Description: TVS 1500W 30V BIDIR DO-201AE
Packaging: Tape & Box (TB)
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-201AE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
PG2010R_R2_00001 PG200_SERIES.pdf
PG2010R_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 1000V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
PG2010R_R2_00001 PG200_SERIES.pdf
PG2010R_R2_00001
Виробник: Panjit International Inc.
Description: DIODE STANDARD 1000V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
PG2010_R2_00001 PG200_SERIES.pdf
PG2010_R2_00001
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 1KV 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
PG2010_R2_00001 PG200_SERIES.pdf
PG2010_R2_00001
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 1KV 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
PJD35N06A_L2_00001 PJx35N06A.pdf
PJD35N06A_L2_00001
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
PJD35N06A_L2_00001 PJx35N06A.pdf
PJD35N06A_L2_00001
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
на замовлення 1040 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+55.42 грн
10+33.60 грн
100+22.47 грн
500+16.72 грн
1000+15.08 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PJD11N06A-AU_L2_000A1 PJD11N06A-AU.pdf
PJD11N06A-AU_L2_000A1
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJD11N06A-AU_L2_000A1 PJD11N06A-AU.pdf
PJD11N06A-AU_L2_000A1
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2952 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+53.08 грн
10+31.72 грн
100+20.53 грн
500+14.71 грн
1000+13.25 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
PJD11N06A_L2_00001 PJD11N06A.pdf
PJD11N06A_L2_00001
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PJW5N06A_R2_00001 PJW5N06A.pdf
PJW5N06A_R2_00001
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PJW5N06A_R2_00001 PJW5N06A.pdf
PJW5N06A_R2_00001
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
PJD35N06A-AU_L2_000A1 PJD35N06A-AU.pdf
PJD35N06A-AU_L2_000A1
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJW5N06A-AU_R2_000A1 PJW5N06A-AU.pdf
PJW5N06A-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 3.72W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
PJW5N06A-AU_R2_000A1 PJW5N06A-AU.pdf
PJW5N06A-AU_R2_000A1
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 3.72W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC100AS_R1_00001 1.5SMC10AS_SERIES.pdf
1.5SMC100AS_R1_00001
Виробник: Panjit International Inc.
Description: TRANSIENT VOLTAGE SUPPRESSOR
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: SMC (DO-214AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC100AS_R1_00001 1.5SMC10AS_SERIES.pdf
1.5SMC100AS_R1_00001
Виробник: Panjit International Inc.
Description: TRANSIENT VOLTAGE SUPPRESSOR
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: SMC (DO-214AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.49 грн
10+36.23 грн
100+25.17 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
P6SMBJ13AS_R1_00001 P6SMBJ8.5AS_SERIES.pdf
P6SMBJ13AS_R1_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+7.08 грн
1600+6.09 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
P6SMBJ13AS_R1_00001 P6SMBJ8.5AS_SERIES.pdf
P6SMBJ13AS_R1_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.56 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
P6SMBJ51AS_R1_00001 P6SMBJ8.5AS_SERIES.pdf
P6SMBJ51AS_R1_00001
Виробник: Panjit International Inc.
Description: TVS DIODE 51VWM 82.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+8.31 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 19 38 57 76 84 85 86 87 88 89 90 91 92 93 94 95 114 133 152 171 190 191  [ Наступна Сторінка >> ]