| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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US1M_R1_00001 | PanJit |
Diode Switching 1KV 1A 2-Pin SMA T/R |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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BSS123_R1_00001 | PanJit |
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R |
на замовлення 2130 шт: термін постачання 21-31 дні (днів) |
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BZX584C5V6_R1_00001 | PanJit |
Diode Zener Single 5.6V 5% 200mW 2-Pin SOD-523 T/R |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BZX584C3V3_R1_00001 | PanJit |
Diode Zener Single 3.3V 5% 200mW 2-Pin SOD-523 T/R |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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| KBJ2010_T0_00601 | PanJit |
KBJ2010_T0_00601 |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||||||
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BZX84B12_R1_00001 | PanJit |
Diode Zener Single 12V 2% 410mW 3-Pin SOT-23 T/R |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ER1002FCT_T0_00001 | PanJit |
Diode Switching 200V 10A 3-Pin(3+Tab) ITO-220AB Tube |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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RS1008FL_R1_00001 | PanJit |
Diode Switching 800V 1A 2-Pin SOD-123FL T/R |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RS1002FL_R1_00001 | PanJit |
Diode Switching 200V 1A 2-Pin SOD-123FL T/R |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RS1004FL_R1_00001 | PanJit |
Diode Switching 400V 1A 2-Pin SOD-123FL T/R |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RS1006FL_R1_00001 | PanJit |
Diode Switching 600V 1A 2-Pin SOD-123FL T/R |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| RPMS410_R2_00601 | PanJit |
Surface Mount Glass Passivated Fast Recovery Bridge Rectifier |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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ER2D_R1_00001 | PanJit |
Diode Switching 200V 2A 2-Pin SMB T/R |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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GBU1010_T0_00601 | PanJit |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 240A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 10A Max. forward impulse current: 0.24kA Version: flat Case: GBU2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT3904_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 1440 шт: термін постачання 14-30 дні (днів) |
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MMBT3904W_R1_00001 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 0.15W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4148W-AU_R1_000A1 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 2.5µA Case: SOD123 Application: automotive industry |
на замовлення 1812 шт: термін постачання 14-30 дні (днів) |
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1N4148WS-AU_R1_000A1 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape Application: automotive industry |
на замовлення 2670 шт: термін постачання 14-30 дні (днів) |
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MMBT2907A_R1_00001 | PanJit |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
на замовлення 2785 шт: термін постачання 14-30 дні (днів) |
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BC846B-AU_R1_000A1 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Case: SOT23 Mounting: SMD Application: automotive industry Current gain: 200...450 Kind of package: reel; tape Power dissipation: 0.33W Pulsed collector current: 0.2A |
на замовлення 3258 шт: термін постачання 14-30 дні (днів) |
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BC857B_R1_00001 | PanJit |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Pulsed collector current: 0.2A |
на замовлення 2420 шт: термін постачання 14-30 дні (днів) |
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PJMD360N60EC_L2_00001 | PanJit |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA Type of transistor: N-MOSFET Power dissipation: 87.5W Case: TO252AA Mounting: SMD Kind of package: reel; tape Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 0.36Ω Pulsed drain current: 23A Gate charge: 18.7nC Polarisation: unipolar Drain current: 11A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PJMF360N60EC_T0_00001 | PanJit |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB Type of transistor: N-MOSFET Power dissipation: 30W Case: ITO220AB Mounting: THT Kind of package: tube Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 0.36Ω Pulsed drain current: 23A Gate charge: 18.7nC Polarisation: unipolar Drain current: 11A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PJMP360N60EC_T0_00001 | PanJit |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220AB Type of transistor: N-MOSFET Power dissipation: 87.5W Case: TO220AB Mounting: THT Kind of package: tube Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 0.36Ω Pulsed drain current: 23A Gate charge: 18.7nC Polarisation: unipolar Drain current: 11A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54S-AU_R1_000A1 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Max. load current: 0.3A Leakage current: 90µA Max. forward impulse current: 0.6A Max. forward voltage: 0.6V Power dissipation: 0.225W Features of semiconductor devices: fast switching Application: automotive industry Kind of package: reel; tape |
на замовлення 1773 шт: термін постачання 14-30 дні (днів) |
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BAT54SDW_R1_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT363 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series x2 Leakage current: 2µA Max. forward impulse current: 1A Max. forward voltage: 0.6V Power dissipation: 0.225W Features of semiconductor devices: ultrafast switching Kind of package: reel; tape |
на замовлення 2572 шт: термін постачання 14-30 дні (днів) |
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BAT54SW_R1_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape; 200mW Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Leakage current: 2µA Max. forward impulse current: 0.6A Max. forward voltage: 0.6V Power dissipation: 0.2W Features of semiconductor devices: fast switching Kind of package: reel; tape |
на замовлення 6000 шт: термін постачання 14-30 дні (днів) |
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BC817-40_R1_00001 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Pulsed collector current: 1A Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 9008 шт: термін постачання 14-30 дні (днів) |
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BC817-40W_R1_00001 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT323 Pulsed collector current: 1A Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 89 шт: термін постачання 14-30 дні (днів) |
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BC856B-AU_R1_000A1 | PanJit |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Pulsed collector current: 0.2A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR20200CT_T0_00001 | PanJit |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 20A; TO220AB; Ufmax: 0.9V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.9V Max. forward impulse current: 200A Kind of package: Ammo Pack Leakage current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54A_R1_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Features of semiconductor devices: fast switching Max. forward voltage: 0.6V Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W Leakage current: 2µA Max. load current: 0.3A |
на замовлення 2223 шт: термін постачання 14-30 дні (днів) |
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ES1D_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SMA Max. forward voltage: 0.95V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 0.15mA |
на замовлення 1790 шт: термін постачання 14-30 дні (днів) |
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SS14_R1_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 6mA Case: SMA Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 30A |
на замовлення 10741 шт: термін постачання 14-30 дні (днів) |
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SS14L_R1_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Max. forward voltage: 0.42V Max. off-state voltage: 40V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.1mA Case: SMA Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 30A |
на замовлення 6646 шт: термін постачання 14-30 дні (днів) |
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2N7002KDW-AU_R1_000A1 | PanJit |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.8nC Application: automotive industry |
на замовлення 55 шт: термін постачання 14-30 дні (днів) |
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BAV99_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Leakage current: 2.5µA Max. forward impulse current: 4A Max. forward voltage: 1.25V Features of semiconductor devices: fast switching Kind of package: reel; tape |
на замовлення 2744 шт: термін постачання 14-30 дні (днів) |
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BAV99S_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: double series x2 Case: SOT363 Leakage current: 2.5µA Max. forward impulse current: 4A Max. forward voltage: 1.25V Features of semiconductor devices: fast switching Kind of package: reel; tape |
на замовлення 1551 шт: термін постачання 14-30 дні (днів) |
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BAV99W-AU_R1_000A1 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT323 Leakage current: 2.5µA Max. forward impulse current: 4A Max. forward voltage: 1.25V Features of semiconductor devices: fast switching Application: automotive industry Kind of package: reel; tape |
на замовлення 2780 шт: термін постачання 14-30 дні (днів) |
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BC847A_R1_00001 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Pulsed collector current: 0.2A Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2845 шт: термін постачання 14-30 дні (днів) |
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SS16_R1_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 5mA Type of diode: Schottky rectifying Max. forward impulse current: 30A Max. forward voltage: 0.7V |
на замовлення 917 шт: термін постачання 14-30 дні (днів) |
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SS16W_R1_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA-W; SMD; 60V; 1A; reel,tape Case: SMA-W Mounting: SMD Max. off-state voltage: 60V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 50mA Type of diode: Schottky rectifying Max. forward impulse current: 30A Max. forward voltage: 0.7V |
на замовлення 451 шт: термін постачання 14-30 дні (днів) |
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P6SMBJ15CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
на замовлення 563 шт: термін постачання 14-30 дні (днів) |
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SK54-AU_R1_000A1 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.55V Kind of package: reel; tape Max. forward impulse current: 100A Application: automotive industry Leakage current: 20mA |
на замовлення 2207 шт: термін постачання 14-30 дні (днів) |
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ES1J_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Leakage current: 0.15mA Kind of package: reel; tape |
на замовлення 1690 шт: термін постачання 14-30 дні (днів) |
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GS1M-AU_R1_000A1 | PanJit |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Application: automotive industry Leakage current: 50µA |
на замовлення 4127 шт: термін постачання 14-30 дні (днів) |
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US1M_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 100ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 100ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 0.1mA |
на замовлення 725 шт: термін постачання 14-30 дні (днів) |
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P4SMAJ5.0CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 43.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1.6mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
на замовлення 1602 шт: термін постачання 14-30 дні (днів) |
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SD103AWS_R1_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 40V; 0.35A; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.35A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 0.6V Max. forward impulse current: 2A Kind of package: reel; tape Leakage current: 5µA |
на замовлення 59 шт: термін постачання 14-30 дні (днів) |
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MMBT4403_R1_00001 | PanJit |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
на замовлення 1937 шт: термін постачання 14-30 дні (днів) |
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BAT43W_R1_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA |
на замовлення 287 шт: термін постачання 14-30 дні (днів) |
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BC846BS_R1_00001 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape |
на замовлення 1595 шт: термін постачання 14-30 дні (днів) |
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BAS16TS_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.125A Reverse recovery time: 6ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD523 Max. forward voltage: 0.855V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 1µA |
на замовлення 99 шт: термін постачання 14-30 дні (днів) |
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BAS16TW_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: triple independent Features of semiconductor devices: fast switching Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 2.5µA |
на замовлення 2774 шт: термін постачання 14-30 дні (днів) |
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BC807-40W_R1_00001 | PanJit |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.3W; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT323 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 1A |
на замовлення 174 шт: термін постачання 14-30 дні (днів) |
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BC847BPN_R1_00001 | PanJit |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Kind of transistor: complementary pair |
на замовлення 575 шт: термін постачання 14-30 дні (днів) |
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BC847BS_R1_00001 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.15W; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 3573 шт: термін постачання 14-30 дні (днів) |
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BC807-40_R1_00001 | PanJit |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 1A |
на замовлення 4772 шт: термін постачання 14-30 дні (днів) |
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BSS123_R1_00001 | PanJit |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.68A Gate charge: 1.8nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KBJ2010_T0_00601 | PanJit |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 200A Electrical mounting: THT Max. forward impulse current: 200A Max. forward voltage: 1.05V Version: flat Features of semiconductor devices: glass passivated Leads: flat pin Max. off-state voltage: 1kV Load current: 20A Kind of package: tube Case: KBJ2 Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. |
| US1M_R1_00001 |
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Виробник: PanJit
Diode Switching 1KV 1A 2-Pin SMA T/R
Diode Switching 1KV 1A 2-Pin SMA T/R
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 10.54 грн |
| 115+ | 6.58 грн |
| 500+ | 3.77 грн |
| 1800+ | 3.45 грн |
| BSS123_R1_00001 |
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Виробник: PanJit
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
на замовлення 2130 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 16.88 грн |
| BZX584C5V6_R1_00001 |
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Виробник: PanJit
Diode Zener Single 5.6V 5% 200mW 2-Pin SOD-523 T/R
Diode Zener Single 5.6V 5% 200mW 2-Pin SOD-523 T/R
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 239+ | 3.96 грн |
| 500+ | 2.31 грн |
| 5000+ | 1.81 грн |
| BZX584C3V3_R1_00001 |
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Виробник: PanJit
Diode Zener Single 3.3V 5% 200mW 2-Pin SOD-523 T/R
Diode Zener Single 3.3V 5% 200mW 2-Pin SOD-523 T/R
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 210+ | 4.51 грн |
| 500+ | 3.20 грн |
| KBJ2010_T0_00601 |
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Виробник: PanJit
KBJ2010_T0_00601
KBJ2010_T0_00601
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| BZX84B12_R1_00001 |
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Виробник: PanJit
Diode Zener Single 12V 2% 410mW 3-Pin SOT-23 T/R
Diode Zener Single 12V 2% 410mW 3-Pin SOT-23 T/R
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 172+ | 5.48 грн |
| 534+ | 1.42 грн |
| ER1002FCT_T0_00001 |
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Виробник: PanJit
Diode Switching 200V 10A 3-Pin(3+Tab) ITO-220AB Tube
Diode Switching 200V 10A 3-Pin(3+Tab) ITO-220AB Tube
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 32.73 грн |
| 50+ | 32.40 грн |
| RS1008FL_R1_00001 |
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Виробник: PanJit
Diode Switching 800V 1A 2-Pin SOD-123FL T/R
Diode Switching 800V 1A 2-Pin SOD-123FL T/R
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 7.55 грн |
| 500+ | 4.89 грн |
| 3000+ | 3.55 грн |
| RS1002FL_R1_00001 |
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Виробник: PanJit
Diode Switching 200V 1A 2-Pin SOD-123FL T/R
Diode Switching 200V 1A 2-Pin SOD-123FL T/R
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 169+ | 5.59 грн |
| 500+ | 3.55 грн |
| 3000+ | 2.49 грн |
| RS1004FL_R1_00001 |
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Виробник: PanJit
Diode Switching 400V 1A 2-Pin SOD-123FL T/R
Diode Switching 400V 1A 2-Pin SOD-123FL T/R
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 180+ | 5.24 грн |
| 500+ | 3.37 грн |
| 3000+ | 2.40 грн |
| RS1006FL_R1_00001 |
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Виробник: PanJit
Diode Switching 600V 1A 2-Pin SOD-123FL T/R
Diode Switching 600V 1A 2-Pin SOD-123FL T/R
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 5.41 грн |
| 500+ | 3.47 грн |
| 3000+ | 2.49 грн |
| RPMS410_R2_00601 |
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Виробник: PanJit
Surface Mount Glass Passivated Fast Recovery Bridge Rectifier
Surface Mount Glass Passivated Fast Recovery Bridge Rectifier
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 30.29 грн |
| 50+ | 24.53 грн |
| 100+ | 19.36 грн |
| 500+ | 15.04 грн |
| 3000+ | 11.03 грн |
| ER2D_R1_00001 |
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Виробник: PanJit
Diode Switching 200V 2A 2-Pin SMB T/R
Diode Switching 200V 2A 2-Pin SMB T/R
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 22.74 грн |
| 50+ | 16.36 грн |
| 100+ | 9.82 грн |
| GBU1010_T0_00601 |
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Виробник: PanJit
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| MMBT3904_R1_00001 |
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 1440 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.85 грн |
| 80+ | 5.18 грн |
| 130+ | 3.18 грн |
| 500+ | 2.18 грн |
| 841+ | 1.12 грн |
| MMBT3904W_R1_00001 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.15W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.15W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| 1N4148W-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Case: SOD123
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Case: SOD123
Application: automotive industry
на замовлення 1812 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.96 грн |
| 107+ | 3.86 грн |
| 179+ | 2.30 грн |
| 500+ | 1.65 грн |
| 792+ | 1.18 грн |
| 1N4148WS-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 2670 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.96 грн |
| 105+ | 3.94 грн |
| 180+ | 2.28 грн |
| 500+ | 1.56 грн |
| 724+ | 1.30 грн |
| 1991+ | 1.22 грн |
| 2000+ | 1.17 грн |
| MMBT2907A_R1_00001 |
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Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 2785 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.19 грн |
| 99+ | 4.19 грн |
| 137+ | 3.00 грн |
| 300+ | 2.83 грн |
| 498+ | 1.89 грн |
| 1000+ | 1.85 грн |
| 1369+ | 1.78 грн |
| BC846B-AU_R1_000A1 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Application: automotive industry
Current gain: 200...450
Kind of package: reel; tape
Power dissipation: 0.33W
Pulsed collector current: 0.2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Application: automotive industry
Current gain: 200...450
Kind of package: reel; tape
Power dissipation: 0.33W
Pulsed collector current: 0.2A
на замовлення 3258 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.85 грн |
| 80+ | 5.18 грн |
| 125+ | 3.30 грн |
| 500+ | 2.41 грн |
| 610+ | 1.54 грн |
| 1676+ | 1.45 грн |
| BC857B_R1_00001 |
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Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Pulsed collector current: 0.2A
на замовлення 2420 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.62 грн |
| 65+ | 6.33 грн |
| 105+ | 3.94 грн |
| 250+ | 3.29 грн |
| 500+ | 2.88 грн |
| 619+ | 1.52 грн |
| 1702+ | 1.44 грн |
| PJMD360N60EC_L2_00001 |
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Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Pulsed drain current: 23A
Gate charge: 18.7nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Pulsed drain current: 23A
Gate charge: 18.7nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMF360N60EC_T0_00001 |
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Виробник: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Power dissipation: 30W
Case: ITO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Pulsed drain current: 23A
Gate charge: 18.7nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Power dissipation: 30W
Case: ITO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Pulsed drain current: 23A
Gate charge: 18.7nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJMP360N60EC_T0_00001 |
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Виробник: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Pulsed drain current: 23A
Gate charge: 18.7nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Pulsed drain current: 23A
Gate charge: 18.7nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
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| BAT54S-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Max. forward voltage: 0.6V
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Application: automotive industry
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. load current: 0.3A
Leakage current: 90µA
Max. forward impulse current: 0.6A
Max. forward voltage: 0.6V
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Application: automotive industry
Kind of package: reel; tape
на замовлення 1773 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.39 грн |
| 59+ | 6.98 грн |
| 100+ | 4.12 грн |
| 500+ | 2.70 грн |
| 559+ | 1.68 грн |
| 1537+ | 1.59 грн |
| BAT54SDW_R1_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series x2
Leakage current: 2µA
Max. forward impulse current: 1A
Max. forward voltage: 0.6V
Power dissipation: 0.225W
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series x2
Leakage current: 2µA
Max. forward impulse current: 1A
Max. forward voltage: 0.6V
Power dissipation: 0.225W
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
на замовлення 2572 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.85 грн |
| 90+ | 4.60 грн |
| 96+ | 4.29 грн |
| 100+ | 4.14 грн |
| 250+ | 3.97 грн |
| 263+ | 3.57 грн |
| 723+ | 3.38 грн |
| BAT54SW_R1_00001 |
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Leakage current: 2µA
Max. forward impulse current: 0.6A
Max. forward voltage: 0.6V
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Leakage current: 2µA
Max. forward impulse current: 0.6A
Max. forward voltage: 0.6V
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
Kind of package: reel; tape
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.62 грн |
| 90+ | 4.60 грн |
| 125+ | 3.30 грн |
| 500+ | 2.46 грн |
| 605+ | 1.55 грн |
| 1665+ | 1.46 грн |
| BC817-40_R1_00001 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Pulsed collector current: 1A
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Pulsed collector current: 1A
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 9008 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.39 грн |
| 59+ | 7.07 грн |
| 100+ | 4.12 грн |
| 500+ | 2.54 грн |
| 601+ | 1.56 грн |
| 1652+ | 1.48 грн |
| BC817-40W_R1_00001 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Pulsed collector current: 1A
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Pulsed collector current: 1A
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 89 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.62 грн |
| 70+ | 5.92 грн |
| BC856B-AU_R1_000A1 |
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Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Pulsed collector current: 0.2A
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Pulsed collector current: 0.2A
Application: automotive industry
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В кошику
од. на суму грн.
| MBR20200CT_T0_00001 |
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Виробник: PanJit
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20A; TO220AB; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.9V
Max. forward impulse current: 200A
Kind of package: Ammo Pack
Leakage current: 20mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20A; TO220AB; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.9V
Max. forward impulse current: 200A
Kind of package: Ammo Pack
Leakage current: 20mA
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В кошику
од. на суму грн.
| BAT54A_R1_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 0.6V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Leakage current: 2µA
Max. load current: 0.3A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 0.6V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Leakage current: 2µA
Max. load current: 0.3A
на замовлення 2223 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 53+ | 8.48 грн |
| 84+ | 4.91 грн |
| 112+ | 3.68 грн |
| 128+ | 3.21 грн |
| 250+ | 2.65 грн |
| 500+ | 2.33 грн |
| 649+ | 1.45 грн |
| 1784+ | 1.36 грн |
| ES1D_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.15mA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.15mA
на замовлення 1790 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.12 грн |
| 33+ | 12.65 грн |
| 50+ | 8.91 грн |
| 100+ | 7.64 грн |
| 197+ | 4.78 грн |
| 540+ | 4.52 грн |
| SS14_R1_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 6mA
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 6mA
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
на замовлення 10741 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 16.81 грн |
| 55+ | 7.48 грн |
| 66+ | 6.24 грн |
| 100+ | 5.74 грн |
| 331+ | 2.83 грн |
| 910+ | 2.68 грн |
| 9000+ | 2.58 грн |
| SS14L_R1_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.42V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.42V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
на замовлення 6646 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.39 грн |
| 52+ | 8.05 грн |
| 100+ | 5.33 грн |
| 276+ | 3.40 грн |
| 758+ | 3.22 грн |
| 1800+ | 3.10 грн |
| 2N7002KDW-AU_R1_000A1 |
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Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.8nC
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.8nC
Application: automotive industry
на замовлення 55 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.70 грн |
| 39+ | 10.60 грн |
| BAV99_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Leakage current: 2.5µA
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Leakage current: 2.5µA
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Features of semiconductor devices: fast switching
Kind of package: reel; tape
на замовлення 2744 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.73 грн |
| 95+ | 4.35 грн |
| 128+ | 3.22 грн |
| 500+ | 2.32 грн |
| 808+ | 1.16 грн |
| 2223+ | 1.10 грн |
| BAV99S_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Case: SOT363
Leakage current: 2.5µA
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Case: SOT363
Leakage current: 2.5µA
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Features of semiconductor devices: fast switching
Kind of package: reel; tape
на замовлення 1551 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.39 грн |
| 59+ | 6.98 грн |
| 81+ | 5.11 грн |
| 100+ | 4.38 грн |
| 175+ | 3.82 грн |
| 370+ | 2.54 грн |
| 1015+ | 2.41 грн |
| BAV99W-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323
Leakage current: 2.5µA
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Features of semiconductor devices: fast switching
Application: automotive industry
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323
Leakage current: 2.5µA
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Features of semiconductor devices: fast switching
Application: automotive industry
Kind of package: reel; tape
на замовлення 2780 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.31 грн |
| 129+ | 3.20 грн |
| 162+ | 2.54 грн |
| 250+ | 1.91 грн |
| 500+ | 1.72 грн |
| 666+ | 1.41 грн |
| 1831+ | 1.33 грн |
| BC847A_R1_00001 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Pulsed collector current: 0.2A
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2845 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.73 грн |
| 61+ | 6.74 грн |
| 101+ | 4.08 грн |
| 250+ | 2.86 грн |
| 500+ | 2.28 грн |
| 738+ | 1.27 грн |
| 2029+ | 1.20 грн |
| SS16_R1_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5mA
Type of diode: Schottky rectifying
Max. forward impulse current: 30A
Max. forward voltage: 0.7V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5mA
Type of diode: Schottky rectifying
Max. forward impulse current: 30A
Max. forward voltage: 0.7V
на замовлення 917 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 15.93 грн |
| 57+ | 7.31 грн |
| 100+ | 5.24 грн |
| 306+ | 3.07 грн |
| 840+ | 2.91 грн |
| SS16W_R1_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA-W; SMD; 60V; 1A; reel,tape
Case: SMA-W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50mA
Type of diode: Schottky rectifying
Max. forward impulse current: 30A
Max. forward voltage: 0.7V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA-W; SMD; 60V; 1A; reel,tape
Case: SMA-W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50mA
Type of diode: Schottky rectifying
Max. forward impulse current: 30A
Max. forward voltage: 0.7V
на замовлення 451 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.85 грн |
| 67+ | 6.16 грн |
| 104+ | 3.97 грн |
| 346+ | 2.72 грн |
| P6SMBJ15CA_R1_00001 |
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Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
на замовлення 563 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 24.69 грн |
| 27+ | 15.36 грн |
| 100+ | 11.26 грн |
| 135+ | 6.98 грн |
| 370+ | 6.57 грн |
| SK54-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
Leakage current: 20mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
Leakage current: 20mA
на замовлення 2207 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 15.93 грн |
| 35+ | 12.00 грн |
| 100+ | 11.42 грн |
| 500+ | 10.76 грн |
| ES1J_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
на замовлення 1690 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.24 грн |
| 42+ | 9.86 грн |
| 100+ | 7.07 грн |
| 177+ | 5.34 грн |
| 486+ | 5.01 грн |
| 1000+ | 4.85 грн |
| GS1M-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
на замовлення 4127 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.19 грн |
| 103+ | 4.03 грн |
| 121+ | 3.40 грн |
| 250+ | 3.06 грн |
| 500+ | 2.83 грн |
| 1000+ | 2.70 грн |
| 1800+ | 2.45 грн |
| 3600+ | 2.38 грн |
| US1M_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 100ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.1mA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 100ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.1mA
на замовлення 725 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.58 грн |
| 54+ | 7.64 грн |
| 100+ | 6.58 грн |
| 222+ | 4.23 грн |
| 611+ | 4.00 грн |
| P4SMAJ5.0CA_R1_00001 |
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
на замовлення 1602 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.58 грн |
| 39+ | 10.60 грн |
| 100+ | 7.56 грн |
| 250+ | 6.74 грн |
| 500+ | 6.24 грн |
| SD103AWS_R1_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.35A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.35A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.35A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.35A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Kind of package: reel; tape
Leakage current: 5µA
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 59+ | 6.57 грн |
| MMBT4403_R1_00001 |
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Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 1937 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 41+ | 10.93 грн |
| 62+ | 6.70 грн |
| 103+ | 3.99 грн |
| 500+ | 2.82 грн |
| 559+ | 1.68 грн |
| 1537+ | 1.59 грн |
| BAT43W_R1_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 287 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.62 грн |
| 77+ | 5.34 грн |
| 103+ | 3.99 грн |
| 117+ | 3.52 грн |
| BC846BS_R1_00001 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
на замовлення 1595 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.19 грн |
| 97+ | 4.27 грн |
| 108+ | 3.80 грн |
| 250+ | 3.52 грн |
| 303+ | 3.11 грн |
| 500+ | 3.10 грн |
| 833+ | 2.93 грн |
| BAS16TS_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 99 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 62+ | 7.23 грн |
| 99+ | 4.11 грн |
| BAS16TW_R1_00001 |
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: fast switching
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: fast switching
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
на замовлення 2774 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 43+ | 10.53 грн |
| 51+ | 8.18 грн |
| 100+ | 6.82 грн |
| 250+ | 5.46 грн |
| 337+ | 2.79 грн |
| 926+ | 2.63 грн |
| BC807-40W_R1_00001 |
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Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
на замовлення 174 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.04 грн |
| 48+ | 8.71 грн |
| 100+ | 7.18 грн |
| BC847BPN_R1_00001 |
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Виробник: PanJit
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
на замовлення 575 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.16 грн |
| 54+ | 7.64 грн |
| 100+ | 4.88 грн |
| 331+ | 2.84 грн |
| BC847BS_R1_00001 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.15W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.15W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 3573 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.39 грн |
| 56+ | 7.39 грн |
| 100+ | 4.48 грн |
| 305+ | 3.08 грн |
| 837+ | 2.92 грн |
| 1000+ | 2.80 грн |
| BC807-40_R1_00001 |
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Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
на замовлення 4772 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.27 грн |
| 55+ | 7.48 грн |
| 500+ | 4.02 грн |
| 599+ | 1.57 грн |
| 1646+ | 1.48 грн |
| BSS123_R1_00001 |
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Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.68A
Gate charge: 1.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.68A
Gate charge: 1.8nC
товару немає в наявності
В кошику
од. на суму грн.
| KBJ2010_T0_00601 |
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Виробник: PanJit
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 200A
Electrical mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1.05V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Load current: 20A
Kind of package: tube
Case: KBJ2
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 200A
Electrical mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1.05V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Load current: 20A
Kind of package: tube
Case: KBJ2
Type of bridge rectifier: single-phase
товару немає в наявності
В кошику
од. на суму грн.






















