| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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MMBTA44_R1_00001 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 400V; 0.3A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23 Current gain: 50...200 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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BAW56-AU_R1_000A1 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: common anode; double Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape Application: automotive industry |
на замовлення 2195 шт: термін постачання 14-30 дні (днів) |
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BAW56_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: common anode; double Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape |
на замовлення 8898 шт: термін постачання 14-30 дні (днів) |
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BAW56W_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: common anode; double Features of semiconductor devices: fast switching Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape |
на замовлення 2925 шт: термін постачання 14-30 дні (днів) |
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P6SMBJ33A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
на замовлення 836 шт: термін постачання 14-30 дні (днів) |
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GBU810_T0_00601 | PanJit |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 220A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 8A Max. forward impulse current: 220A Version: flat Case: GBU2 Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated Max. forward voltage: 1.05V |
на замовлення 59 шт: термін постачання 14-30 дні (днів) |
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P6SMBJ5.0A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
на замовлення 865 шт: термін постачання 14-30 дні (днів) |
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BAT42W_R1_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 0.5µA |
на замовлення 127 шт: термін постачання 14-30 дні (днів) |
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BAT42WS_R1_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching Leakage current: 0.5µA |
на замовлення 1601 шт: термін постачання 14-30 дні (днів) |
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BAS316_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Kind of package: reel; tape Max. forward impulse current: 4A Max. load current: 0.5A Leakage current: 0.5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAV21W-AU_R1_000A1 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 4A Case: SOD123 Kind of package: reel; tape Max. forward voltage: 1V Reverse recovery time: 50ns Application: automotive industry Leakage current: 0.2mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAV21W_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 4A Case: SOD123 Kind of package: reel; tape Max. forward voltage: 1V Reverse recovery time: 50ns Leakage current: 0.2mA |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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BAV21WS-AU_R1_000A1 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323F; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 4A Case: SOD323F Kind of package: reel; tape Max. forward voltage: 1V Reverse recovery time: 50ns Application: automotive industry Leakage current: 0.1µA |
на замовлення 5000 шт: термін постачання 14-30 дні (днів) |
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P6SMBJ30A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
на замовлення 355 шт: термін постачання 14-30 дні (днів) |
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GBJ2510_T0_00601 | PanJit |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 25A Max. forward impulse current: 350A Version: flat Case: GBJ2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
на замовлення 36 шт: термін постачання 14-30 дні (днів) |
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BAT54WS_R1_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward voltage: 0.6V Max. forward impulse current: 1A Kind of package: reel; tape Leakage current: 2µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LL4148_R1_10001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Case: MiniMELF Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape Leakage current: 5µA |
на замовлення 15840 шт: термін постачання 14-30 дні (днів) |
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LL4148_R2_10001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Case: MiniMELF Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape Leakage current: 5µA |
на замовлення 44118 шт: термін постачання 14-30 дні (днів) |
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1N4148W_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 2.5µA Case: SOD123 |
на замовлення 2348 шт: термін постачання 14-30 дні (днів) |
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GS1M_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Leakage current: 50µA |
на замовлення 598 шт: термін постачання 14-30 дні (днів) |
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1N4148WS_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 2.5µA Kind of package: reel; tape |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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BAT54S_R1_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 0.6V Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W Features of semiconductor devices: fast switching Max. load current: 0.3A Leakage current: 2µA |
на замовлення 6599 шт: термін постачання 14-30 дні (днів) |
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BAV103_R1_10001 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 75ns; MiniMELF; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 75ns Semiconductor structure: single diode Case: MiniMELF Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Leakage current: 0.1µA |
на замовлення 8347 шт: термін постачання 14-30 дні (днів) |
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ES1J_R2_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Leakage current: 0.15mA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||||
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GS1M_R2_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Leakage current: 50µA |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||||
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BAS16TS-AU_R1_000A1 | PanJit |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.125A Reverse recovery time: 6ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD523 Max. forward voltage: 0.855V Max. forward impulse current: 4A Kind of package: reel; tape Application: automotive industry Leakage current: 1µA |
на замовлення 28227 шт: термін постачання 14-30 дні (днів) |
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BC856BW_R1_00001 | PanJit |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.25W; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
на замовлення 11830 шт: термін постачання 14-30 дні (днів) |
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BC817-25W_R1_00001 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT323 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 170MHz Pulsed collector current: 1A |
на замовлення 190 шт: термін постачання 14-30 дні (днів) |
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BC817-25W_R2_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT323 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 170MHz Pulsed collector current: 1A |
товару немає в наявності |
Мінімальне замовлення: 24000 шт В кошику од. на суму грн. | ||||||||||||||||
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SS16_R2_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 40A Max. forward voltage: 0.7V |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||||
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P4SMAJ5.0A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.8mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
на замовлення 7310 шт: термін постачання 14-30 дні (днів) |
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BC817-25W-AU_R1_000A1 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT323 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 170MHz Pulsed collector current: 1A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N5408G_R2_00001 | PanJit |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: DO201AD |
на замовлення 3939 шт: термін постачання 14-30 дні (днів) |
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BC846BW_R1_00001 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Case: SOT323 Mounting: SMD Frequency: 100MHz Current gain: 200...450 Kind of package: reel; tape Power dissipation: 0.25W |
на замовлення 11745 шт: термін постачання 14-30 дні (днів) |
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BC857CS_R1_00001 | PanJit |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.225W; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT363 Mounting: SMD Frequency: 200MHz Current gain: 420...800 Kind of package: reel; tape Power dissipation: 0.225W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC857CW_R1_00001 | PanJit |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SOT323 Mounting: SMD Frequency: 200MHz Current gain: 420...800 Kind of package: reel; tape Power dissipation: 0.25W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAV99W_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT323 Leakage current: 2.5µA Max. forward impulse current: 4A Max. forward voltage: 1.25V Features of semiconductor devices: fast switching Kind of package: reel; tape |
на замовлення 33 шт: термін постачання 14-30 дні (днів) |
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BC847BW-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
на замовлення 2960 шт: термін постачання 14-30 дні (днів) |
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BC847BW_R2_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape |
на замовлення 23938 шт: термін постачання 14-30 дні (днів) |
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| PJMH040N60EC_T0_00201 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W Type of transistor: N-MOSFET Power dissipation: 200W Case: TO247AD-3 Mounting: THT Gate charge: 144nC Kind of package: tube Gate-source voltage: ±30V On-state resistance: 40mΩ Pulsed drain current: 212A Polarisation: unipolar Drain current: 71A Kind of channel: enhancement Drain-source voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBT5551W-AU_R1_007A1 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.2W Case: SOT323 Current gain: 30...250 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT5551W_R1_00701 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.2W Case: SOT323 Current gain: 30...250 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SS14_R2_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 6mA Case: SMA Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SS14W_R1_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA-W; SMD; 40V; 1A; reel,tape Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.5mA Case: SMA-W Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GS1M-AU_R2_000A1 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Application: automotive industry Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GS1MWG_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA-W Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GS1MWG_R2_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA-W Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 1µA |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||||
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1N5338B_R2_00001 | PanJit |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 5.1V; DO201AE; single diode; tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 5.1V Case: DO201AE Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape Manufacturer series: 1N53xxB |
на замовлення 6832 шт: термін постачання 14-30 дні (днів) |
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PJMP120N60EC_T0_00001 | PanJit |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
на замовлення 196 шт: термін постачання 14-30 дні (днів) |
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SD103CWS_R1_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 20V; 0.35A; reel,tape Max. forward voltage: 0.6V Features of semiconductor devices: fast switching Max. off-state voltage: 20V Load current: 0.35A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 5µA Case: SOD323 Type of diode: Schottky switching Mounting: SMD Max. forward impulse current: 2A |
на замовлення 10000 шт: термін постачання 14-30 дні (днів) |
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BAS70WS_R1_00001 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Power dissipation: 0.225W Leakage current: 10µA |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
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PJMH120N60EC_T0_00601 | PanJit |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PJMF120N60EC_T0_00001 | PanJit |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 33W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BC817-40-AU_R1_000A1 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Pulsed collector current: 1A Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC817-40W-AU_R2_000A1 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.33W Case: SOT323 Pulsed collector current: 1A Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT2222A-AU_R1_000A1 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MMBT2222A_R1_00501 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MMBT2222ATB_R1_00001 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT523 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT523 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBT2222AW_R1_00001 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SOT323 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBT3904-AU_R1_005A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| MMBTA44_R1_00001 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Current gain: 50...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Current gain: 50...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.77 грн |
| BAW56-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 2195 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 54+ | 8.34 грн |
| 74+ | 5.62 грн |
| 121+ | 3.42 грн |
| 500+ | 2.46 грн |
| 666+ | 1.41 грн |
| 1831+ | 1.33 грн |
| BAW56_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
на замовлення 8898 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 44+ | 10.23 грн |
| 66+ | 6.29 грн |
| 82+ | 5.05 грн |
| 114+ | 3.61 грн |
| 225+ | 2.99 грн |
| 500+ | 2.52 грн |
| 738+ | 1.27 грн |
| 2029+ | 1.20 грн |
| BAW56W_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
на замовлення 2925 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 9.95 грн |
| 94+ | 4.40 грн |
| 116+ | 3.55 грн |
| 130+ | 3.18 грн |
| 250+ | 2.65 грн |
| 500+ | 2.23 грн |
| 714+ | 1.31 грн |
| 1964+ | 1.24 грн |
| P6SMBJ33A_R1_00001 |
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Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
на замовлення 836 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.66 грн |
| 27+ | 15.78 грн |
| 100+ | 11.09 грн |
| 157+ | 6.00 грн |
| 432+ | 5.67 грн |
| GBU810_T0_00601 |
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Виробник: PanJit
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 220A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 220A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.05V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 220A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 220A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.05V
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 87.60 грн |
| 10+ | 44.53 грн |
| 20+ | 43.05 грн |
| 29+ | 33.11 грн |
| P6SMBJ5.0A_R1_00001 |
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Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
на замовлення 865 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.66 грн |
| 27+ | 15.61 грн |
| 100+ | 10.76 грн |
| 162+ | 5.83 грн |
| 444+ | 5.50 грн |
| BAT42W_R1_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 0.5µA
на замовлення 127 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.02 грн |
| 74+ | 5.59 грн |
| 89+ | 4.65 грн |
| 100+ | 4.24 грн |
| BAT42WS_R1_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.5µA
на замовлення 1601 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 33+ | 13.64 грн |
| 61+ | 6.76 грн |
| 100+ | 4.15 грн |
| 435+ | 2.16 грн |
| 1196+ | 2.04 грн |
| BAS316_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Max. load current: 0.5A
Leakage current: 0.5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Max. load current: 0.5A
Leakage current: 0.5µA
товару немає в наявності
В кошику
од. на суму грн.
| BAV21W-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Case: SOD123
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 50ns
Application: automotive industry
Leakage current: 0.2mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Case: SOD123
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 50ns
Application: automotive industry
Leakage current: 0.2mA
товару немає в наявності
В кошику
од. на суму грн.
| BAV21W_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Case: SOD123
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 50ns
Leakage current: 0.2mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Case: SOD123
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 50ns
Leakage current: 0.2mA
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.73 грн |
| 74+ | 5.59 грн |
| 99+ | 4.16 грн |
| 113+ | 3.66 грн |
| 500+ | 2.78 грн |
| 532+ | 1.77 грн |
| 1464+ | 1.67 грн |
| BAV21WS-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323F; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Case: SOD323F
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 50ns
Application: automotive industry
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323F; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Case: SOD323F
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 50ns
Application: automotive industry
Leakage current: 0.1µA
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 82+ | 5.46 грн |
| 132+ | 3.12 грн |
| 182+ | 2.26 грн |
| 485+ | 1.94 грн |
| 500+ | 1.87 грн |
| 1000+ | 1.77 грн |
| 1332+ | 1.76 грн |
| P6SMBJ30A_R1_00001 |
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Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
на замовлення 355 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.70 грн |
| 38+ | 10.93 грн |
| 100+ | 7.72 грн |
| GBJ2510_T0_00601 |
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Виробник: PanJit
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 110.60 грн |
| 10+ | 72.30 грн |
| 15+ | 69.02 грн |
| BAT54WS_R1_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 2µA
товару немає в наявності
В кошику
од. на суму грн.
| LL4148_R1_10001 |
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
на замовлення 15840 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.31 грн |
| 120+ | 3.45 грн |
| 182+ | 2.26 грн |
| 250+ | 1.94 грн |
| 500+ | 1.73 грн |
| 989+ | 0.95 грн |
| 2714+ | 0.90 грн |
| 10000+ | 0.86 грн |
| LL4148_R2_10001 |
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
на замовлення 44118 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 188+ | 2.35 грн |
| 264+ | 1.56 грн |
| 341+ | 1.21 грн |
| 500+ | 1.08 грн |
| 1000+ | 1.00 грн |
| 1092+ | 0.86 грн |
| 3003+ | 0.81 грн |
| 1N4148W_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Case: SOD123
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 2.5µA
Case: SOD123
на замовлення 2348 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.96 грн |
| 85+ | 4.85 грн |
| 102+ | 4.04 грн |
| 135+ | 3.06 грн |
| 500+ | 2.19 грн |
| 946+ | 0.99 грн |
| GS1M_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
на замовлення 598 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.85 грн |
| 79+ | 5.26 грн |
| 116+ | 3.55 грн |
| 500+ | 2.65 грн |
| 1N4148WS_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 2.5µA
Kind of package: reel; tape
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.96 грн |
| 88+ | 4.68 грн |
| BAT54S_R1_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.6V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Max. load current: 0.3A
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.6V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Max. load current: 0.3A
Leakage current: 2µA
на замовлення 6599 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.73 грн |
| 70+ | 5.92 грн |
| 97+ | 4.24 грн |
| 114+ | 3.63 грн |
| 500+ | 2.51 грн |
| 599+ | 1.57 грн |
| 1646+ | 1.48 грн |
| BAV103_R1_10001 |
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 75ns; MiniMELF; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 0.1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 75ns; MiniMELF; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 0.1µA
на замовлення 8347 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 132+ | 3.37 грн |
| 209+ | 1.97 грн |
| 229+ | 1.80 грн |
| 250+ | 1.72 грн |
| 500+ | 1.54 грн |
| 1000+ | 1.49 грн |
| 1680+ | 1.45 грн |
| 2500+ | 1.44 грн |
| ES1J_R2_00001 |
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| GS1M_R2_00001 |
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| BAS16TS-AU_R1_000A1 |
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.125A; 6ns; SOD523; Ufmax: 0.855V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.125A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD523
Max. forward voltage: 0.855V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 1µA
на замовлення 28227 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 83+ | 5.36 грн |
| 148+ | 2.79 грн |
| 175+ | 2.36 грн |
| 500+ | 2.07 грн |
| 581+ | 1.62 грн |
| 1596+ | 1.53 грн |
| 25000+ | 1.51 грн |
| BC856BW_R1_00001 |
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Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 11830 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.08 грн |
| 125+ | 3.29 грн |
| 166+ | 2.49 грн |
| 500+ | 2.07 грн |
| 625+ | 1.50 грн |
| 1718+ | 1.42 грн |
| BC817-25W_R1_00001 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 1A
на замовлення 190 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.96 грн |
| 87+ | 4.77 грн |
| 122+ | 3.38 грн |
| BC817-25W_R2_00001 |
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 1A
товару немає в наявності
Мінімальне замовлення: 24000 шт
В кошику
од. на суму грн.
| SS16_R2_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 0.7V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 0.7V
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| P4SMAJ5.0A_R1_00001 |
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
на замовлення 7310 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.39 грн |
| 45+ | 9.28 грн |
| 100+ | 6.98 грн |
| 186+ | 5.09 грн |
| 510+ | 4.77 грн |
| 1800+ | 4.60 грн |
| BC817-25W-AU_R1_000A1 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 1A
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 170MHz
Pulsed collector current: 1A
Application: automotive industry
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| 1N5408G_R2_00001 |
Виробник: PanJit
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
на замовлення 3939 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.85 грн |
| 56+ | 7.39 грн |
| 61+ | 6.84 грн |
| 100+ | 6.52 грн |
| 161+ | 5.84 грн |
| 442+ | 5.52 грн |
| 500+ | 5.47 грн |
| 1250+ | 5.31 грн |
| BC846BW_R1_00001 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Frequency: 100MHz
Current gain: 200...450
Kind of package: reel; tape
Power dissipation: 0.25W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Frequency: 100MHz
Current gain: 200...450
Kind of package: reel; tape
Power dissipation: 0.25W
на замовлення 11745 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.08 грн |
| 132+ | 3.12 грн |
| 174+ | 2.37 грн |
| 500+ | 1.98 грн |
| 766+ | 1.22 грн |
| 2107+ | 1.16 грн |
| BC857CS_R1_00001 |
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Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.225W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Frequency: 200MHz
Current gain: 420...800
Kind of package: reel; tape
Power dissipation: 0.225W
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.225W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Frequency: 200MHz
Current gain: 420...800
Kind of package: reel; tape
Power dissipation: 0.225W
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| BC857CW_R1_00001 |
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Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Current gain: 420...800
Kind of package: reel; tape
Power dissipation: 0.25W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Current gain: 420...800
Kind of package: reel; tape
Power dissipation: 0.25W
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| BAV99W_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323
Leakage current: 2.5µA
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323
Leakage current: 2.5µA
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Features of semiconductor devices: fast switching
Kind of package: reel; tape
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 33+ | 12.32 грн |
| BC847BW-AU_R1_000A1 |
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
на замовлення 2960 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.39 грн |
| 50+ | 8.30 грн |
| 119+ | 3.48 грн |
| 250+ | 3.05 грн |
| 500+ | 2.56 грн |
| 765+ | 1.22 грн |
| 2101+ | 1.16 грн |
| BC847BW_R2_00001 |
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
на замовлення 23938 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 135+ | 3.28 грн |
| 200+ | 2.05 грн |
| 244+ | 1.68 грн |
| 272+ | 1.51 грн |
| 500+ | 1.40 грн |
| 766+ | 1.22 грн |
| 2107+ | 1.16 грн |
| 12000+ | 1.12 грн |
| PJMH040N60EC_T0_00201 |
Виробник: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Power dissipation: 200W
Case: TO247AD-3
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Pulsed drain current: 212A
Polarisation: unipolar
Drain current: 71A
Kind of channel: enhancement
Drain-source voltage: 600V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Power dissipation: 200W
Case: TO247AD-3
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Pulsed drain current: 212A
Polarisation: unipolar
Drain current: 71A
Kind of channel: enhancement
Drain-source voltage: 600V
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| MMBT5551W-AU_R1_007A1 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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| MMBT5551W_R1_00701 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| SS14_R2_00001 |
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 6mA
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 6mA
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
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| SS14W_R1_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA-W; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.5mA
Case: SMA-W
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA-W; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.5mA
Case: SMA-W
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 30A
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| GS1M-AU_R2_000A1 |
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
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| GS1MWG_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
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| GS1MWG_R2_00001 |
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
товару немає в наявності
Мінімальне замовлення: 7500 шт
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| 1N5338B_R2_00001 |
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Виробник: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; DO201AE; single diode; tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; DO201AE; single diode; tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N53xxB
на замовлення 6832 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 36.90 грн |
| 17+ | 25.47 грн |
| 82+ | 11.50 грн |
| 224+ | 10.93 грн |
| 500+ | 10.85 грн |
| 3750+ | 10.76 грн |
| PJMP120N60EC_T0_00001 |
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Виробник: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
на замовлення 196 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 290.22 грн |
| 7+ | 149.54 грн |
| 18+ | 141.32 грн |
| SD103CWS_R1_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 20V; 0.35A; reel,tape
Max. forward voltage: 0.6V
Features of semiconductor devices: fast switching
Max. off-state voltage: 20V
Load current: 0.35A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Case: SOD323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 20V; 0.35A; reel,tape
Max. forward voltage: 0.6V
Features of semiconductor devices: fast switching
Max. off-state voltage: 20V
Load current: 0.35A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Case: SOD323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 2A
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.50 грн |
| 100+ | 8.19 грн |
| 398+ | 2.36 грн |
| 1093+ | 2.23 грн |
| 5000+ | 2.14 грн |
| BAS70WS_R1_00001 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.225W
Leakage current: 10µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.225W
Leakage current: 10µA
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 73.44 грн |
| PJMH120N60EC_T0_00601 |
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Виробник: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
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| PJMF120N60EC_T0_00001 |
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Виробник: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
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| BC817-40-AU_R1_000A1 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| BC817-40W-AU_R2_000A1 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT323
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT323
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| MMBT2222A-AU_R1_000A1 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| MMBT2222A_R1_00501 |
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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| MMBT2222ATB_R1_00001 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT523
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
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| MMBT2222AW_R1_00001 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
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| MMBT3904-AU_R1_005A1 |
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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