Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105089) > Сторінка 1747 з 1752
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| DTC144EMFHAT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DTC144EU3HZGT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 2W; SC70,SOT323; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DTC144EU3T106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DTC144GUAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DTC144TUAFRAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC70,SOT323; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Current gain: 100...600 |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||||||||||
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DTC144TUAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC70,SOT323; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Current gain: 100...600 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DTC144WUAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 22kΩ Current gain: 56 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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UMB10NFHATN | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Mounting: SMD Frequency: 250MHz Current gain: 80 Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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UMB10NTN | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Mounting: SMD Frequency: 250MHz Current gain: 80 Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| RUC002N05T116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 800A Power dissipation: 0.35W Case: SST3 Gate-source voltage: ±8V On-state resistance: 7.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RUM002N05T2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 150mW; SOT723 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±8V On-state resistance: 2.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 8285 шт: термін постачання 14-30 дні (днів) |
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RU1J002YNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: SOT323F Gate-source voltage: ±8V On-state resistance: 3.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2377 шт: термін постачання 14-30 дні (днів) |
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RE1J002YNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: SOT416F Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 456 шт: термін постачання 14-30 дні (днів) |
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UM6K33NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±8V On-state resistance: 7.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2647 шт: термін постачання 14-30 дні (днів) |
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RF4E100AJTCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 36A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±12V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2780 шт: термін постачання 14-30 дні (днів) |
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RF4E080GNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S Power dissipation: 2W Kind of package: reel; tape Case: DFN2020-8S Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 5.8nC On-state resistance: 17.6mΩ Drain current: 8A Pulsed drain current: 32A Gate-source voltage: ±20V Drain-source voltage: 30V |
на замовлення 2990 шт: термін постачання 14-30 дні (днів) |
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RF4E080BNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S Power dissipation: 2W Kind of package: reel; tape Case: DFN2020-8S Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 14.5nC On-state resistance: 17.6mΩ Drain current: 8A Pulsed drain current: 32A Gate-source voltage: ±20V Drain-source voltage: 30V |
на замовлення 2953 шт: термін постачання 14-30 дні (днів) |
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SCS212AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; 93W; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Case: TO220AC Mounting: THT Max. forward voltage: 1.55V Load current: 12A Max. forward impulse current: 170A Max. load current: 52A Power dissipation: 93W Max. off-state voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SCS112AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 12A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. load current: 48A Max. forward impulse current: 167A Power dissipation: 93W Kind of package: tube Heatsink thickness: max. 1.27mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SCT3120ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Pulsed drain current: 52A Power dissipation: 103W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 156mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SCS220AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 40W Case: TO220FP-2 Mounting: THT Technology: SiC Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 20A Max. forward voltage: 1.55V Max. forward impulse current: 260A Power dissipation: 40W Max. load current: 41A Max. off-state voltage: 650V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BA10393F-E2 | ROHM SEMICONDUCTOR |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 50nA Mounting: SMT Operating temperature: -40...85°C Type of integrated circuit: comparator Kind of output: open collector Kind of package: reel; tape Case: SO8 Kind of comparator: universal Input offset current: 50nA Input offset voltage: 5mV Voltage supply range: ± 1...18V DC; 2...36V DC Number of comparators: 2 |
на замовлення 2046 шт: термін постачання 14-30 дні (днів) |
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| US6X7TR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; complementary pair; 12V; 1.5A; 400mW Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 12V Collector current: 1.5A Power dissipation: 0.4W Case: SOT363T Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RQ3E120ATTB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8 Kind of package: reel; tape Mounting: SMD Pulsed drain current: -48A Drain current: -39A Drain-source voltage: -30V Gate charge: 62nC On-state resistance: 11.3mΩ Power dissipation: 20W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Case: HSMT8 Type of transistor: P-MOSFET |
на замовлення 2941 шт: термін постачання 14-30 дні (днів) |
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RFC02MM2STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 0.2A; 35ns; SOD123F; Ufmax: 0.95V Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD123F Reverse recovery time: 35ns Load current: 0.2A Max. forward voltage: 0.95V Max. forward impulse current: 10A Max. off-state voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SCS215AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 15A Max. forward voltage: 1.55V Power dissipation: 39W Max. forward impulse current: 200A Max. off-state voltage: 650V Max. load current: 36A Kind of package: tube Case: TO220FP-2 Technology: SiC Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SCS315AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W Technology: SiC Case: TO220FP-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 0.3mA Power dissipation: 39W Max. forward voltage: 1.71V Load current: 15A Max. load current: 39A Max. forward impulse current: 410A Max. off-state voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCS210AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W Power dissipation: 34W Case: TO220FP-2 Technology: SiC Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Load current: 10A Max. forward voltage: 1.55V Max. load current: 28A Max. off-state voltage: 650V Max. forward impulse current: 150A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCS310AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W Power dissipation: 34W Case: TO220FP-2 Technology: SiC Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Leakage current: 0.2mA Load current: 10A Max. forward voltage: 1.71V Max. load current: 30A Max. off-state voltage: 650V Max. forward impulse current: 0.3kA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RS1G201ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -80A Drain current: -78A Drain-source voltage: -40V Gate charge: 130nC On-state resistance: 6.5mΩ Power dissipation: 40W Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| RS1G260MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 104A Drain current: 80A Drain-source voltage: 40V Gate charge: 44nC On-state resistance: 4.4mΩ Power dissipation: 35W Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| RS1G120MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 48A Drain current: 34A Drain-source voltage: 40V Gate charge: 9.4nC On-state resistance: 20.7mΩ Power dissipation: 25W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RS1G150MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 60A Drain current: 43A Drain-source voltage: 40V Gate charge: 15nC On-state resistance: 13.3mΩ Power dissipation: 25W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RS1G180MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 72A Drain current: 57A Drain-source voltage: 40V Gate charge: 19.5nC On-state resistance: 9.2mΩ Power dissipation: 30W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RS1G300GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 120A Drain current: 80A Drain-source voltage: 40V Gate charge: 56.8nC On-state resistance: 3mΩ Power dissipation: 35W Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| SML-P13FTT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; green; SMD; 0402; 18mcd; 20mA; 566nm; Lens: transparent Type of diode: LED LED colour: green Mounting: SMD Case - inch: 0402 Luminosity: 18mcd LED current: 20mA Wavelength: 566nm Front: flat LED lens: transparent |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SML-P13PTT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; green; SMD; 0402; 10mcd; 20mA; 560nm; Lens: transparent Type of diode: LED LED colour: green Mounting: SMD Case - inch: 0402 Luminosity: 10mcd LED current: 20mA Wavelength: 560nm Front: flat LED lens: transparent |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SML-P12M2TT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; green; SMD; 0402; 25mcd; 20mA; 576nm; Lens: transparent Type of diode: LED LED colour: green Mounting: SMD Case - inch: 0402 Luminosity: 25mcd LED current: 20mA Wavelength: 576nm Front: flat LED lens: transparent |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RB160L-40TE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 70A Kind of package: reel; tape |
на замовлення 704 шт: термін постачання 14-30 дні (днів) |
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| EMX1GT2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.15W Case: SOT563 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||||
| EMX18T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 12V; 0.5A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SOT563 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| EMX1FHAT2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.15W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| EMX1T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.15W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
RBR2MM40BTFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Leakage current: 80µA Max. forward voltage: 0.55V Load current: 2A Max. off-state voltage: 40V Max. forward impulse current: 30A Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
RBR3MM40BTFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Leakage current: 0.1mA Max. forward voltage: 0.58V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 30A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| RBS3LAM40BTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD128; SMD; 20V; 3A; reel,tape Mounting: SMD Case: SOD128 Kind of package: reel; tape Type of diode: Schottky rectifying Leakage current: 0.6mA Max. forward voltage: 0.45V Load current: 3A Max. off-state voltage: 20V Max. forward impulse current: 60A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
RBR2MM40BTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Leakage current: 80µA Max. forward voltage: 0.55V Load current: 2A Max. off-state voltage: 40V Max. forward impulse current: 30A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
RBR3MM40BTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Leakage current: 0.1mA Max. forward voltage: 0.58V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 30A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
RHP020N06FRAT100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 671 шт: термін постачання 14-30 дні (днів) |
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DTC123JKAT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
DTC123JCAT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
DTC123JCAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DTC123JMT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
DTC123JU3T106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DTC123YEFRATL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||||
| DTC123YETL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
DTC123YU3T106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| RV1C002UNT2CL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 0.6A; 100mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.15A Pulsed drain current: 0.6A Power dissipation: 0.1W Case: X2-DFN0806-3 Gate-source voltage: ±8V On-state resistance: 11.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| EMD6FHAT2R | ROHM SEMICONDUCTOR |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT563 Kind of package: reel; tape Type of transistor: NPN / PNP Kind of transistor: BRT; complementary pair Collector current: 0.1A Power dissipation: 0.15W Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 100...600 Base resistor: 4.7kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| EMD6T2R | ROHM SEMICONDUCTOR |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT563 Kind of package: reel; tape Type of transistor: NPN / PNP Kind of transistor: BRT; complementary pair Collector current: 0.1A Power dissipation: 0.15W Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 100...600 Base resistor: 4.7kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. |
| DTC144EMFHAT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
товару немає в наявності
В кошику
од. на суму грн.
| DTC144EU3HZGT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 2W; SC70,SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 2W; SC70,SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
товару немає в наявності
В кошику
од. на суму грн.
| DTC144EU3T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
товару немає в наявності
В кошику
од. на суму грн.
| DTC144GUAT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 47kΩ
Current gain: 68
товару немає в наявності
В кошику
од. на суму грн.
| DTC144TUAFRAT106 |
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| DTC144TUAT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
товару немає в наявності
В кошику
од. на суму грн.
| DTC144WUAT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
товару немає в наявності
В кошику
од. на суму грн.
| UMB10NFHATN |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Mounting: SMD
Frequency: 250MHz
Current gain: 80
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Mounting: SMD
Frequency: 250MHz
Current gain: 80
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Kind of transistor: BRT
товару немає в наявності
В кошику
од. на суму грн.
| UMB10NTN |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Mounting: SMD
Frequency: 250MHz
Current gain: 80
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Mounting: SMD
Frequency: 250MHz
Current gain: 80
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Kind of transistor: BRT
товару немає в наявності
В кошику
од. на суму грн.
| RUC002N05T116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 800A
Power dissipation: 0.35W
Case: SST3
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 800A
Power dissipation: 0.35W
Case: SST3
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| RUM002N05T2L |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±8V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±8V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 8285 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.22 грн |
| 27+ | 15.92 грн |
| 50+ | 10.56 грн |
| 100+ | 8.79 грн |
| 250+ | 7.00 грн |
| 500+ | 5.99 грн |
| 1000+ | 5.20 грн |
| 4000+ | 4.14 грн |
| 8000+ | 3.79 грн |
| RU1J002YNTCL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT323F
Gate-source voltage: ±8V
On-state resistance: 3.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT323F
Gate-source voltage: ±8V
On-state resistance: 3.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2377 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.18 грн |
| 43+ | 9.87 грн |
| 65+ | 6.42 грн |
| 100+ | 5.28 грн |
| 500+ | 3.52 грн |
| 1000+ | 3.11 грн |
| RE1J002YNTCL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 456 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.54 грн |
| 34+ | 12.44 грн |
| 100+ | 7.27 грн |
| UM6K33NTN |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2647 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.68 грн |
| 23+ | 18.24 грн |
| 50+ | 12.19 грн |
| 100+ | 10.20 грн |
| 500+ | 7.13 грн |
| 1000+ | 6.30 грн |
| 1500+ | 6.05 грн |
| RF4E100AJTCR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±12V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±12V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2780 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 91.97 грн |
| 10+ | 53.81 грн |
| 100+ | 35.82 грн |
| 500+ | 28.36 грн |
| 1000+ | 25.95 грн |
| RF4E080GNTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.8nC
On-state resistance: 17.6mΩ
Drain current: 8A
Pulsed drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.8nC
On-state resistance: 17.6mΩ
Drain current: 8A
Pulsed drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.64 грн |
| 16+ | 27.61 грн |
| 100+ | 18.24 грн |
| 250+ | 16.17 грн |
| RF4E080BNTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 14.5nC
On-state resistance: 17.6mΩ
Drain current: 8A
Pulsed drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 14.5nC
On-state resistance: 17.6mΩ
Drain current: 8A
Pulsed drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 2953 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.43 грн |
| 12+ | 35.98 грн |
| 100+ | 25.37 грн |
| 500+ | 20.15 грн |
| 1000+ | 18.57 грн |
| SCS212AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; 93W; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220AC
Mounting: THT
Max. forward voltage: 1.55V
Load current: 12A
Max. forward impulse current: 170A
Max. load current: 52A
Power dissipation: 93W
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; 93W; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220AC
Mounting: THT
Max. forward voltage: 1.55V
Load current: 12A
Max. forward impulse current: 170A
Max. load current: 52A
Power dissipation: 93W
Max. off-state voltage: 650V
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| SCS112AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 48A
Max. forward impulse current: 167A
Power dissipation: 93W
Kind of package: tube
Heatsink thickness: max. 1.27mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 48A
Max. forward impulse current: 167A
Power dissipation: 93W
Kind of package: tube
Heatsink thickness: max. 1.27mm
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| SCT3120ALGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 52A
Power dissipation: 103W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 52A
Power dissipation: 103W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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| SCS220AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 40W
Case: TO220FP-2
Mounting: THT
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 20A
Max. forward voltage: 1.55V
Max. forward impulse current: 260A
Power dissipation: 40W
Max. load current: 41A
Max. off-state voltage: 650V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 40W
Case: TO220FP-2
Mounting: THT
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 20A
Max. forward voltage: 1.55V
Max. forward impulse current: 260A
Power dissipation: 40W
Max. load current: 41A
Max. off-state voltage: 650V
Kind of package: tube
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| BA10393F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 50nA
Mounting: SMT
Operating temperature: -40...85°C
Type of integrated circuit: comparator
Kind of output: open collector
Kind of package: reel; tape
Case: SO8
Kind of comparator: universal
Input offset current: 50nA
Input offset voltage: 5mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 50nA
Mounting: SMT
Operating temperature: -40...85°C
Type of integrated circuit: comparator
Kind of output: open collector
Kind of package: reel; tape
Case: SO8
Kind of comparator: universal
Input offset current: 50nA
Input offset voltage: 5mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
на замовлення 2046 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.14 грн |
| 100+ | 24.21 грн |
| US6X7TR |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 1.5A; 400mW
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 1.5A
Power dissipation: 0.4W
Case: SOT363T
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 1.5A; 400mW
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 1.5A
Power dissipation: 0.4W
Case: SOT363T
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
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| RQ3E120ATTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -48A
Drain current: -39A
Drain-source voltage: -30V
Gate charge: 62nC
On-state resistance: 11.3mΩ
Power dissipation: 20W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: HSMT8
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -48A
Drain current: -39A
Drain-source voltage: -30V
Gate charge: 62nC
On-state resistance: 11.3mΩ
Power dissipation: 20W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: HSMT8
Type of transistor: P-MOSFET
на замовлення 2941 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 78.58 грн |
| 10+ | 45.35 грн |
| 100+ | 30.10 грн |
| RFC02MM2STFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.2A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 35ns
Load current: 0.2A
Max. forward voltage: 0.95V
Max. forward impulse current: 10A
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.2A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 35ns
Load current: 0.2A
Max. forward voltage: 0.95V
Max. forward impulse current: 10A
Max. off-state voltage: 200V
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| SCS215AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 15A
Max. forward voltage: 1.55V
Power dissipation: 39W
Max. forward impulse current: 200A
Max. off-state voltage: 650V
Max. load current: 36A
Kind of package: tube
Case: TO220FP-2
Technology: SiC
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 15A
Max. forward voltage: 1.55V
Power dissipation: 39W
Max. forward impulse current: 200A
Max. off-state voltage: 650V
Max. load current: 36A
Kind of package: tube
Case: TO220FP-2
Technology: SiC
Mounting: THT
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| SCS315AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 0.3mA
Power dissipation: 39W
Max. forward voltage: 1.71V
Load current: 15A
Max. load current: 39A
Max. forward impulse current: 410A
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Technology: SiC
Case: TO220FP-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 0.3mA
Power dissipation: 39W
Max. forward voltage: 1.71V
Load current: 15A
Max. load current: 39A
Max. forward impulse current: 410A
Max. off-state voltage: 650V
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| SCS210AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Power dissipation: 34W
Case: TO220FP-2
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 10A
Max. forward voltage: 1.55V
Max. load current: 28A
Max. off-state voltage: 650V
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Power dissipation: 34W
Case: TO220FP-2
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 10A
Max. forward voltage: 1.55V
Max. load current: 28A
Max. off-state voltage: 650V
Max. forward impulse current: 150A
Kind of package: tube
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| SCS310AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Power dissipation: 34W
Case: TO220FP-2
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Leakage current: 0.2mA
Load current: 10A
Max. forward voltage: 1.71V
Max. load current: 30A
Max. off-state voltage: 650V
Max. forward impulse current: 0.3kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Power dissipation: 34W
Case: TO220FP-2
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Leakage current: 0.2mA
Load current: 10A
Max. forward voltage: 1.71V
Max. load current: 30A
Max. off-state voltage: 650V
Max. forward impulse current: 0.3kA
Kind of package: tube
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| RS1G201ATTB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -78A
Drain-source voltage: -40V
Gate charge: 130nC
On-state resistance: 6.5mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -78A
Drain-source voltage: -40V
Gate charge: 130nC
On-state resistance: 6.5mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| RS1G260MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 104A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 44nC
On-state resistance: 4.4mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 104A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 44nC
On-state resistance: 4.4mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| RS1G120MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 48A
Drain current: 34A
Drain-source voltage: 40V
Gate charge: 9.4nC
On-state resistance: 20.7mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 48A
Drain current: 34A
Drain-source voltage: 40V
Gate charge: 9.4nC
On-state resistance: 20.7mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
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| RS1G150MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 43A
Drain-source voltage: 40V
Gate charge: 15nC
On-state resistance: 13.3mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 43A
Drain-source voltage: 40V
Gate charge: 15nC
On-state resistance: 13.3mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
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| RS1G180MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 72A
Drain current: 57A
Drain-source voltage: 40V
Gate charge: 19.5nC
On-state resistance: 9.2mΩ
Power dissipation: 30W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 72A
Drain current: 57A
Drain-source voltage: 40V
Gate charge: 19.5nC
On-state resistance: 9.2mΩ
Power dissipation: 30W
Gate-source voltage: ±20V
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| RS1G300GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 120A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 56.8nC
On-state resistance: 3mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 120A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 56.8nC
On-state resistance: 3mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
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Мінімальне замовлення: 2500 шт
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| SML-P13FTT86R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 18mcd; 20mA; 566nm; Lens: transparent
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Luminosity: 18mcd
LED current: 20mA
Wavelength: 566nm
Front: flat
LED lens: transparent
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 18mcd; 20mA; 566nm; Lens: transparent
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Luminosity: 18mcd
LED current: 20mA
Wavelength: 566nm
Front: flat
LED lens: transparent
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| SML-P13PTT86R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 10mcd; 20mA; 560nm; Lens: transparent
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Luminosity: 10mcd
LED current: 20mA
Wavelength: 560nm
Front: flat
LED lens: transparent
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 10mcd; 20mA; 560nm; Lens: transparent
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Luminosity: 10mcd
LED current: 20mA
Wavelength: 560nm
Front: flat
LED lens: transparent
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| SML-P12M2TT86R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 25mcd; 20mA; 576nm; Lens: transparent
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Luminosity: 25mcd
LED current: 20mA
Wavelength: 576nm
Front: flat
LED lens: transparent
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 25mcd; 20mA; 576nm; Lens: transparent
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Luminosity: 25mcd
LED current: 20mA
Wavelength: 576nm
Front: flat
LED lens: transparent
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| RB160L-40TE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 704 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 34.82 грн |
| 20+ | 20.98 грн |
| 100+ | 11.69 грн |
| 500+ | 8.29 грн |
| EMX1GT2R |
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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Мінімальне замовлення: 5 шт
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| EMX18T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 12V; 0.5A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT563
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 12V; 0.5A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT563
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
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| EMX1FHAT2R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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| EMX1T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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| RBR2MM40BTFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 80µA
Max. forward voltage: 0.55V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 80µA
Max. forward voltage: 0.55V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
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Мінімальне замовлення: 3000 шт
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| RBR3MM40BTFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.1mA
Max. forward voltage: 0.58V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.1mA
Max. forward voltage: 0.58V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
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| RBS3LAM40BTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 20V; 3A; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.6mA
Max. forward voltage: 0.45V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 60A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 20V; 3A; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.6mA
Max. forward voltage: 0.45V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 60A
Semiconductor structure: single diode
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| RBR2MM40BTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 80µA
Max. forward voltage: 0.55V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 80µA
Max. forward voltage: 0.55V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
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| RBR3MM40BTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.1mA
Max. forward voltage: 0.58V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.1mA
Max. forward voltage: 0.58V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
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| RHP020N06FRAT100 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 671 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.00 грн |
| 19+ | 21.89 грн |
| 50+ | 19.40 грн |
| 250+ | 17.49 грн |
| DTC123JKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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| DTC123JCAT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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| DTC123JCAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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| DTC123JMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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| DTC123JU3T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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| DTC123YEFRATL |
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
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Мінімальне замовлення: 20 шт
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| DTC123YETL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
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| DTC123YU3T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
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од. на суму грн.
| RV1C002UNT2CL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 0.6A; 100mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.15A
Pulsed drain current: 0.6A
Power dissipation: 0.1W
Case: X2-DFN0806-3
Gate-source voltage: ±8V
On-state resistance: 11.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 0.6A; 100mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.15A
Pulsed drain current: 0.6A
Power dissipation: 0.1W
Case: X2-DFN0806-3
Gate-source voltage: ±8V
On-state resistance: 11.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| EMD6FHAT2R |
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Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Type of transistor: NPN / PNP
Kind of transistor: BRT; complementary pair
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 100...600
Base resistor: 4.7kΩ
Frequency: 250MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Type of transistor: NPN / PNP
Kind of transistor: BRT; complementary pair
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 100...600
Base resistor: 4.7kΩ
Frequency: 250MHz
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В кошику
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| EMD6T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Type of transistor: NPN / PNP
Kind of transistor: BRT; complementary pair
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 100...600
Base resistor: 4.7kΩ
Frequency: 250MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Type of transistor: NPN / PNP
Kind of transistor: BRT; complementary pair
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 100...600
Base resistor: 4.7kΩ
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.



















