Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105894) > Сторінка 884 з 1765
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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RD3G01BATTL1 | Rohm Semiconductor |
Description: PCH -40V -15A POWER MOSFET - RD3Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RD3G01BATTL1 | Rohm Semiconductor |
Description: PCH -40V -15A POWER MOSFET - RD3Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2737 шт: термін постачання 21-31 дні (днів) |
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BRCH064GWZ-3E2 | Rohm Semiconductor |
Description: IC EEPROM 64KBIT I2C UCSP30L1ADigiKey Programmable: Not Verified Memory Organization: 8K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: UCSP30L1A Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 64Kbit Mounting Type: Surface Mount Package / Case: 6-XFBGA, CSPBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||||
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BRCH064GWZ-3E2 | Rohm Semiconductor |
Description: IC EEPROM 64KBIT I2C UCSP30L1ADigiKey Programmable: Not Verified Memory Organization: 8K x 8 Memory Interface: I2C Supplier Device Package: UCSP30L1A Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 64Kbit Mounting Type: Surface Mount Package / Case: 6-XFBGA, CSPBGA Packaging: Cut Tape (CT) Write Cycle Time - Word, Page: 5ms Part Status: Active |
на замовлення 5685 шт: термін постачання 21-31 дні (днів) |
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BM2P129TF-E2 | Rohm Semiconductor |
Description: IC OFFLINE SWITCHER 8SOPSupplier Device Package: 8-SOP Topology: Buck Frequency - Switching: 100kHz Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BM2P129TF-E2 | Rohm Semiconductor |
Description: IC OFFLINE SWITCHER 8SOPSupplier Device Package: 8-SOP Topology: Buck Frequency - Switching: 100kHz Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 2473 шт: термін постачання 21-31 дні (днів) |
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BM2P129TF-EVK-001 | Rohm Semiconductor |
Description: EVAL BOARD FOR BM2P129Power - Output: 2W Outputs and Type: 1 Non-Isolated Output Main Purpose: AC/DC, Non-Isolated Utilized IC / Part: BM2P129 Regulator Topology: Buck Frequency - Switching: 100kHz Contents: Board(s) Current - Output: 167mA Voltage - Input: 90 ~ 264 VAC Voltage - Output: 12V Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TFZGTR5.6B | Rohm Semiconductor |
Description: DIODE ZENER 5.6V 500MW TUMD2Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V Power - Max: 500 mW Supplier Device Package: TUMD2 Impedance (Max) (Zzt): 13 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SFR01MZPF1332 | Rohm Semiconductor |
Description: RES SMD 13.3K OHM 1% 1/16W 0402 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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BA00CC0WCP-V5E2 | Rohm Semiconductor |
Description: IC REG LIN POS ADJ 1A TO220CP-V5Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit Voltage Dropout (Max): 0.5V @ 500mA PSRR: 55dB (120Hz) Control Features: Enable Voltage - Output (Min/Fixed): 1.225V Voltage - Output (Max): 24.5V Supplier Device Package: TO220CP-V5 Number of Regulators: 1 Voltage - Input (Max): 25V Current - Quiescent (Iq): 5 mA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 1A Mounting Type: Through Hole Output Type: Adjustable Package / Case: TO-220-5 Full Pack, Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BU64562GWZ-E2 | Rohm Semiconductor |
Description: 2 WIRE SERIAL INTERFACE LENS DRIPackaging: Tape & Reel (TR) Package / Case: 8-XFBGA, CSPBGA Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 500mA Interface: I2C Operating Temperature: -25°C ~ 85°C Output Configuration: Half Bridge (2) Voltage - Supply: 2.3V ~ 4.8V Applications: Camera Technology: NMOS, PMOS Supplier Device Package: UCSP30L1 Motor Type - Stepper: Bipolar Motor Type - AC, DC: Piezo Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BU64562GWZ-E2 | Rohm Semiconductor |
Description: 2 WIRE SERIAL INTERFACE LENS DRIPackaging: Cut Tape (CT) Package / Case: 8-XFBGA, CSPBGA Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 500mA Interface: I2C Operating Temperature: -25°C ~ 85°C Output Configuration: Half Bridge (2) Voltage - Supply: 2.3V ~ 4.8V Applications: Camera Technology: NMOS, PMOS Supplier Device Package: UCSP30L1 Motor Type - Stepper: Bipolar Motor Type - AC, DC: Piezo Part Status: Active |
на замовлення 2988 шт: термін постачання 21-31 дні (днів) |
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BD2310G-TR | Rohm Semiconductor |
Description: IC GATE DRVR LOW-SIDE 5SSOPOperating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 4A, 4A Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: Low-Side Channel Type: Single Rise / Fall Time (Typ): 10ns, 10ns Supplier Device Package: 5-SSOP Input Type: Non-Inverting Voltage - Supply: 4.5V ~ 18V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BD2310G-TR | Rohm Semiconductor |
Description: IC GATE DRVR LOW-SIDE 5SSOPSupplier Device Package: 5-SSOP Input Type: Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 4A, 4A Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: Low-Side Channel Type: Single Rise / Fall Time (Typ): 10ns, 10ns |
на замовлення 2476 шт: термін постачання 21-31 дні (днів) |
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BD2320EFJ-LAE2 | Rohm Semiconductor |
Description: IC GATE DRVR HI/LOW SIDE 8SOICDigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 3.5A, 4.5A Logic Voltage - VIL, VIH: 1.7V, 1.5V Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: High-Side and Low-Side Channel Type: Independent Rise / Fall Time (Typ): 8ns, 6ns Supplier Device Package: 8-HTSOP-J High Side Voltage - Max (Bootstrap): 100 V Input Type: Non-Inverting Voltage - Supply: 7.5V ~ 14.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BD2320EFJ-LAE2 | Rohm Semiconductor |
Description: IC GATE DRVR HI/LOW SIDE 8SOICDigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 3.5A, 4.5A Logic Voltage - VIL, VIH: 1.7V, 1.5V Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: High-Side and Low-Side Channel Type: Independent Rise / Fall Time (Typ): 8ns, 6ns Supplier Device Package: 8-HTSOP-J High Side Voltage - Max (Bootstrap): 100 V Input Type: Non-Inverting Voltage - Supply: 7.5V ~ 14.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 1833 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPF3901 | Rohm Semiconductor |
Description: RES SMD 3.9 KOHM 1% 0.3W 0603Power (Watts): 0.3W Tolerance: ±1% Features: Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 3.9 kOhms |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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SDR03EZPF3901 | Rohm Semiconductor |
Description: RES SMD 3.9 KOHM 1% 0.3W 0603Power (Watts): 0.3W Tolerance: ±1% Features: Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 3.9 kOhms |
на замовлення 1666 шт: термін постачання 21-31 дні (днів) |
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BM2P109TF-E2 | Rohm Semiconductor |
Description: IC OFFLINE SW FULL-BRIDGE 8SOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BM2P109TF-E2 | Rohm Semiconductor |
Description: IC OFFLINE SW FULL-BRIDGE 8SOP |
на замовлення 4922 шт: термін постачання 21-31 дні (днів) |
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BD900N1G-CTR | Rohm Semiconductor |
Description: QUICUR, NANO CAP, 150MA, ADJUSTAVoltage Dropout (Max): 1.8V @ 150mA PSRR: 70dB (1kHz) Voltage - Output (Min/Fixed): 5V Supplier Device Package: 5-SSOP Number of Regulators: 1 Voltage - Input (Max): 42V Current - Quiescent (Iq): 60 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BD900N1G-CTR | Rohm Semiconductor |
Description: QUICUR, NANO CAP, 150MA, ADJUSTAProtection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO) Voltage Dropout (Max): 1.8V @ 150mA PSRR: 70dB (1kHz) Voltage - Output (Min/Fixed): 5V Supplier Device Package: 5-SSOP Number of Regulators: 1 Voltage - Input (Max): 42V Current - Quiescent (Iq): 60 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 2894 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPJ470 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS : |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPJ470 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS : |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPJ131 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS :Resistance: 130 Ohms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 1206 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Temperature Coefficient: ±200ppm/°C Package / Case: 1206 (3216 Metric) Features: Anti-Sulfur, Automotive AEC-Q200 Tolerance: ±5% Power (Watts): 0.25W, 1/4W Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPJ131 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS :Power (Watts): 0.25W, 1/4W Packaging: Cut Tape (CT) Resistance: 130 Ohms Part Status: Active Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 1206 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Temperature Coefficient: ±200ppm/°C Package / Case: 1206 (3216 Metric) Features: Anti-Sulfur, Automotive AEC-Q200 Tolerance: ±5% |
на замовлення 9890 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPJ3R3 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS : |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPJ3R3 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS : |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPF1200 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS : |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPF1200 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS : |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPJ331 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS :Power (Watts): 0.25W, 1/4W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 330 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPJ331 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS :Power (Watts): 0.25W, 1/4W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 330 Ohms |
на замовлення 7932 шт: термін постачання 21-31 дні (днів) |
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BR24T32FVJ-WE2 | Rohm Semiconductor |
Description: IC EEPROM 32KBIT I2C 8TSSOPDigiKey Programmable: Not Verified Memory Organization: 4K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-TSSOP-BJ Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 32Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BR24T32FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 32KBIT I2C 8TSSOPDigiKey Programmable: Not Verified Memory Organization: 4K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-TSSOP-B Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 32Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RW4E045AJTCL1 | Rohm Semiconductor |
Description: NCH 30V 4.5A POWER MOSFET: RW4E0Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUFDFN Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: DFN1616-7T |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RW4E045ATTCL1 | Rohm Semiconductor |
Description: PCH -30V -4.5A POWER MOSFET. RW4Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN1616-7T Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUFDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RW4E045ATTCL1 | Rohm Semiconductor |
Description: PCH -30V -4.5A POWER MOSFET. RW4Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN1616-7T Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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R8008ANJGTL | Rohm Semiconductor |
Description: NCH 800V 8A POWER MOSFET : R8008Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263S Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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R8008ANJGTL | Rohm Semiconductor |
Description: NCH 800V 8A POWER MOSFET : R8008Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263S Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 851 шт: термін постачання 21-31 дні (днів) |
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R8003KNXC7G | Rohm Semiconductor |
Description: 800V 3A, TO-220FM, HIGH-SPEED SWPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V |
на замовлення 477 шт: термін постачання 21-31 дні (днів) |
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R8002KNXC7G | Rohm Semiconductor |
Description: 800V 1.6A, TO-220FM, HIGH-SPEEDPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 150µA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V |
на замовлення 914 шт: термін постачання 21-31 дні (днів) |
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R8006KNXC7G | Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING NCH 800V 6APackaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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R8006KNXC7G | Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING NCH 800V 6APackaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V |
на замовлення 242 шт: термін постачання 21-31 дні (днів) |
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R8002KND3TL1 | Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING NCH 800V 1.Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 150µA Supplier Device Package: TO-252GE Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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R8002KND3TL1 | Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING NCH 800V 1.Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252GE Vgs(th) (Max) @ Id: 4.5V @ 150µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V |
на замовлення 396 шт: термін постачання 21-31 дні (днів) |
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R8009KNXC7G | Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING NCH 800V 9APackaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V Power Dissipation (Max): 59W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 5mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R8009KNXC7G | Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING NCH 800V 9APackaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V Power Dissipation (Max): 59W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 5mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
на замовлення 1241 шт: термін постачання 21-31 дні (днів) |
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R8003KND3TL1 | Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING NCH 800V 3APackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V Power Dissipation (Max): 45W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 2mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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R8003KND3TL1 | Rohm Semiconductor |
Description: HIGH-SPEED SWITCHING NCH 800V 3APackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V Power Dissipation (Max): 45W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 2mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V |
на замовлення 678 шт: термін постачання 21-31 дні (днів) |
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RSS070P05HZGTB | Rohm Semiconductor |
Description: PCH -45V -7A POWER MOSFET. RSS07Qualification: AEC-Q101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±20V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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RSS070P05HZGTB | Rohm Semiconductor |
Description: PCH -45V -7A POWER MOSFET. RSS07Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 4563 шт: термін постачання 21-31 дні (днів) |
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RGTV80TS65GC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 78A TO-247NPower - Max: 234 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 78 A Gate Charge: 81 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 1.02mJ (on), 710µJ (off) Td (on/off) @ 25°C: 39ns/113ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247N Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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RGTV80TK65GVC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 39A TO-3PFMInput Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube Power - Max: 85 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 39 A Part Status: Active Gate Charge: 81 nC Test Condition: 400V, 40A, 10Ohm, 15V Switching Energy: 1.02mJ (on), 710µJ (off) Td (on/off) @ 25°C: 39ns/113ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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BD7800FP-E2 | Rohm Semiconductor | Description: IC REG LINEAR 5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C3V0LYFHT116 | Rohm Semiconductor |
Description: DIODE ZENER 3V 250MW SOT23Packaging: Tape & Reel (TR) Tolerance: ±6.67% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOT-23 Grade: Automotive Power - Max: 250 mW Current - Reverse Leakage @ Vr: 10 µA @ 1 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BZX84C3V0LYFHT116 | Rohm Semiconductor |
Description: DIODE ZENER 3V 250MW SOT23Packaging: Cut Tape (CT) Tolerance: ±6.67% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOT-23 Grade: Automotive Power - Max: 250 mW Current - Reverse Leakage @ Vr: 10 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 1197 шт: термін постачання 21-31 дні (днів) |
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MMBZ27VCLYFHT116 | Rohm Semiconductor |
Description: 22V, SOT-23, CATHODE COMMON, AUTQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 40W Voltage - Clamping (Max) @ Ipp: 38V Voltage - Breakdown (Min): 25.65V Unidirectional Channels: 2 Supplier Device Package: SOT-23 Voltage - Reverse Standoff (Typ): 22V (Max) Current - Peak Pulse (10/1000µs): 1A Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MMBZ27VCLYFHT116 | Rohm Semiconductor |
Description: 22V, SOT-23, CATHODE COMMON, AUTQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 40W Voltage - Clamping (Max) @ Ipp: 38V Voltage - Breakdown (Min): 25.65V Unidirectional Channels: 2 Supplier Device Package: SOT-23 Voltage - Reverse Standoff (Typ): 22V (Max) Current - Peak Pulse (10/1000µs): 1A Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BUS1DJC3GWZ-E2 | Rohm Semiconductor |
Description: 1CH ULTRA SMALL HIGH SIDE LOAD SPackaging: Tape & Reel (TR) Features: Load Discharge, Slew Rate Controlled Package / Case: 4-XFBGA, CSPBGA Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 140mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: UCSP30L1 Fault Protection: Short Circuit Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BUS1DJC3GWZ-E2 | Rohm Semiconductor |
Description: 1CH ULTRA SMALL HIGH SIDE LOAD SPackaging: Cut Tape (CT) Features: Load Discharge, Slew Rate Controlled Package / Case: 4-XFBGA, CSPBGA Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 140mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: UCSP30L1 Fault Protection: Short Circuit Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
| RD3G01BATTL1 |
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Виробник: Rohm Semiconductor
Description: PCH -40V -15A POWER MOSFET - RD3
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: PCH -40V -15A POWER MOSFET - RD3
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 34.28 грн |
| RD3G01BATTL1 |
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Виробник: Rohm Semiconductor
Description: PCH -40V -15A POWER MOSFET - RD3
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: PCH -40V -15A POWER MOSFET - RD3
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2737 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.49 грн |
| 10+ | 76.28 грн |
| 100+ | 51.07 грн |
| 500+ | 37.78 грн |
| 1000+ | 34.51 грн |
| BRCH064GWZ-3E2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C UCSP30L1A
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: UCSP30L1A
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Description: IC EEPROM 64KBIT I2C UCSP30L1A
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: UCSP30L1A
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| BRCH064GWZ-3E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C UCSP30L1A
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Supplier Device Package: UCSP30L1A
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Description: IC EEPROM 64KBIT I2C UCSP30L1A
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Supplier Device Package: UCSP30L1A
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Write Cycle Time - Word, Page: 5ms
Part Status: Active
на замовлення 5685 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.99 грн |
| 10+ | 40.09 грн |
| 25+ | 39.64 грн |
| 50+ | 36.98 грн |
| 100+ | 33.06 грн |
| 250+ | 32.78 грн |
| 500+ | 31.77 грн |
| 1000+ | 30.63 грн |
| BM2P129TF-E2 |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCHER 8SOP
Supplier Device Package: 8-SOP
Topology: Buck
Frequency - Switching: 100kHz
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCHER 8SOP
Supplier Device Package: 8-SOP
Topology: Buck
Frequency - Switching: 100kHz
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
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| BM2P129TF-E2 |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCHER 8SOP
Supplier Device Package: 8-SOP
Topology: Buck
Frequency - Switching: 100kHz
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC OFFLINE SWITCHER 8SOP
Supplier Device Package: 8-SOP
Topology: Buck
Frequency - Switching: 100kHz
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 2473 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.53 грн |
| 10+ | 85.21 грн |
| 25+ | 77.49 грн |
| 100+ | 64.78 грн |
| 250+ | 60.99 грн |
| 500+ | 58.70 грн |
| 1000+ | 55.89 грн |
| BM2P129TF-EVK-001 |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM2P129
Power - Output: 2W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Non-Isolated
Utilized IC / Part: BM2P129
Regulator Topology: Buck
Frequency - Switching: 100kHz
Contents: Board(s)
Current - Output: 167mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 12V
Packaging: Box
Description: EVAL BOARD FOR BM2P129
Power - Output: 2W
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Non-Isolated
Utilized IC / Part: BM2P129
Regulator Topology: Buck
Frequency - Switching: 100kHz
Contents: Board(s)
Current - Output: 167mA
Voltage - Input: 90 ~ 264 VAC
Voltage - Output: 12V
Packaging: Box
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В кошику
од. на суму грн.
| TFZGTR5.6B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.6V 500MW TUMD2
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Power - Max: 500 mW
Supplier Device Package: TUMD2
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE ZENER 5.6V 500MW TUMD2
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Power - Max: 500 mW
Supplier Device Package: TUMD2
Impedance (Max) (Zzt): 13 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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В кошику
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| SFR01MZPF1332 |
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Виробник: Rohm Semiconductor
Description: RES SMD 13.3K OHM 1% 1/16W 0402
Description: RES SMD 13.3K OHM 1% 1/16W 0402
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BA00CC0WCP-V5E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN POS ADJ 1A TO220CP-V5
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.225V
Voltage - Output (Max): 24.5V
Supplier Device Package: TO220CP-V5
Number of Regulators: 1
Voltage - Input (Max): 25V
Current - Quiescent (Iq): 5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Adjustable
Package / Case: TO-220-5 Full Pack, Formed Leads
Packaging: Tape & Reel (TR)
Description: IC REG LIN POS ADJ 1A TO220CP-V5
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 500mA
PSRR: 55dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.225V
Voltage - Output (Max): 24.5V
Supplier Device Package: TO220CP-V5
Number of Regulators: 1
Voltage - Input (Max): 25V
Current - Quiescent (Iq): 5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Adjustable
Package / Case: TO-220-5 Full Pack, Formed Leads
Packaging: Tape & Reel (TR)
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В кошику
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| BU64562GWZ-E2 |
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Виробник: Rohm Semiconductor
Description: 2 WIRE SERIAL INTERFACE LENS DRI
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.3V ~ 4.8V
Applications: Camera
Technology: NMOS, PMOS
Supplier Device Package: UCSP30L1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Piezo
Part Status: Active
Description: 2 WIRE SERIAL INTERFACE LENS DRI
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.3V ~ 4.8V
Applications: Camera
Technology: NMOS, PMOS
Supplier Device Package: UCSP30L1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Piezo
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BU64562GWZ-E2 |
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Виробник: Rohm Semiconductor
Description: 2 WIRE SERIAL INTERFACE LENS DRI
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.3V ~ 4.8V
Applications: Camera
Technology: NMOS, PMOS
Supplier Device Package: UCSP30L1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Piezo
Part Status: Active
Description: 2 WIRE SERIAL INTERFACE LENS DRI
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: I2C
Operating Temperature: -25°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.3V ~ 4.8V
Applications: Camera
Technology: NMOS, PMOS
Supplier Device Package: UCSP30L1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Piezo
Part Status: Active
на замовлення 2988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 228.36 грн |
| 10+ | 164.93 грн |
| 25+ | 151.15 грн |
| 100+ | 127.62 грн |
| 250+ | 120.83 грн |
| 500+ | 116.74 грн |
| 1000+ | 111.52 грн |
| BD2310G-TR |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR LOW-SIDE 5SSOP
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 10ns, 10ns
Supplier Device Package: 5-SSOP
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Description: IC GATE DRVR LOW-SIDE 5SSOP
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 10ns, 10ns
Supplier Device Package: 5-SSOP
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD2310G-TR |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR LOW-SIDE 5SSOP
Supplier Device Package: 5-SSOP
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 10ns, 10ns
Description: IC GATE DRVR LOW-SIDE 5SSOP
Supplier Device Package: 5-SSOP
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 10ns, 10ns
на замовлення 2476 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.22 грн |
| 10+ | 60.40 грн |
| 25+ | 54.70 грн |
| 100+ | 45.39 грн |
| 250+ | 42.56 грн |
| 500+ | 40.85 грн |
| 1000+ | 39.42 грн |
| BD2320EFJ-LAE2 |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side and Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 8ns, 6ns
Supplier Device Package: 8-HTSOP-J
High Side Voltage - Max (Bootstrap): 100 V
Input Type: Non-Inverting
Voltage - Supply: 7.5V ~ 14.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side and Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 8ns, 6ns
Supplier Device Package: 8-HTSOP-J
High Side Voltage - Max (Bootstrap): 100 V
Input Type: Non-Inverting
Voltage - Supply: 7.5V ~ 14.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD2320EFJ-LAE2 |
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Виробник: Rohm Semiconductor
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side and Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 8ns, 6ns
Supplier Device Package: 8-HTSOP-J
High Side Voltage - Max (Bootstrap): 100 V
Input Type: Non-Inverting
Voltage - Supply: 7.5V ~ 14.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3.5A, 4.5A
Logic Voltage - VIL, VIH: 1.7V, 1.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side and Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 8ns, 6ns
Supplier Device Package: 8-HTSOP-J
High Side Voltage - Max (Bootstrap): 100 V
Input Type: Non-Inverting
Voltage - Supply: 7.5V ~ 14.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1833 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 278.32 грн |
| 10+ | 171.88 грн |
| 25+ | 146.85 грн |
| 100+ | 111.20 грн |
| 250+ | 98.14 грн |
| 500+ | 90.10 грн |
| 1000+ | 82.00 грн |
| SDR03EZPF3901 |
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Виробник: Rohm Semiconductor
Description: RES SMD 3.9 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.9 kOhms
Description: RES SMD 3.9 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.9 kOhms
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SDR03EZPF3901 |
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Виробник: Rohm Semiconductor
Description: RES SMD 3.9 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.9 kOhms
Description: RES SMD 3.9 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.9 kOhms
на замовлення 1666 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.69 грн |
| 50+ | 6.18 грн |
| 73+ | 4.18 грн |
| 100+ | 3.35 грн |
| 500+ | 2.40 грн |
| 1000+ | 2.11 грн |
| BM2P109TF-E2 |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SW FULL-BRIDGE 8SOP
Description: IC OFFLINE SW FULL-BRIDGE 8SOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 68.12 грн |
| BM2P109TF-E2 |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SW FULL-BRIDGE 8SOP
Description: IC OFFLINE SW FULL-BRIDGE 8SOP
на замовлення 4922 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 141.93 грн |
| 10+ | 122.86 грн |
| 25+ | 115.91 грн |
| 100+ | 92.66 грн |
| 250+ | 87.01 грн |
| 500+ | 76.13 грн |
| 1000+ | 62.05 грн |
| BD900N1G-CTR |
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Виробник: Rohm Semiconductor
Description: QUICUR, NANO CAP, 150MA, ADJUSTA
Voltage Dropout (Max): 1.8V @ 150mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Description: QUICUR, NANO CAP, 150MA, ADJUSTA
Voltage Dropout (Max): 1.8V @ 150mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD900N1G-CTR |
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Виробник: Rohm Semiconductor
Description: QUICUR, NANO CAP, 150MA, ADJUSTA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 1.8V @ 150mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: QUICUR, NANO CAP, 150MA, ADJUSTA
Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 1.8V @ 150mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 2894 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.57 грн |
| 10+ | 80.63 грн |
| 25+ | 76.54 грн |
| 100+ | 59.01 грн |
| 250+ | 55.16 грн |
| 500+ | 48.75 грн |
| 1000+ | 37.85 грн |
| SFR18EZPJ470 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Description: SULFUR TOLERANT CHIP RESISTORS :
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 1.40 грн |
| 10000+ | 1.26 грн |
| SFR18EZPJ470 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Description: SULFUR TOLERANT CHIP RESISTORS :
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.89 грн |
| 31+ | 9.93 грн |
| 100+ | 3.87 грн |
| 1000+ | 1.52 грн |
| 2500+ | 1.40 грн |
| SFR18EZPJ131 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Resistance: 130 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
Description: SULFUR TOLERANT CHIP RESISTORS :
Resistance: 130 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 1.57 грн |
| SFR18EZPJ131 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
Resistance: 130 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Packaging: Cut Tape (CT)
Resistance: 130 Ohms
Part Status: Active
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
на замовлення 9890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.48 грн |
| 28+ | 11.00 грн |
| 100+ | 4.32 грн |
| 1000+ | 1.70 грн |
| 2500+ | 1.56 грн |
| SFR18EZPJ3R3 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Description: SULFUR TOLERANT CHIP RESISTORS :
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 1.40 грн |
| 10000+ | 1.26 грн |
| SFR18EZPJ3R3 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Description: SULFUR TOLERANT CHIP RESISTORS :
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.89 грн |
| 31+ | 9.93 грн |
| 100+ | 3.87 грн |
| 1000+ | 1.52 грн |
| 2500+ | 1.40 грн |
| SFR18EZPF1200 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Description: SULFUR TOLERANT CHIP RESISTORS :
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 2.17 грн |
| 10000+ | 1.95 грн |
| SFR18EZPF1200 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Description: SULFUR TOLERANT CHIP RESISTORS :
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.24 грн |
| 20+ | 15.35 грн |
| 100+ | 5.99 грн |
| 1000+ | 2.35 грн |
| 2500+ | 2.16 грн |
| SFR18EZPJ331 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 330 Ohms
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 330 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 1.64 грн |
| SFR18EZPJ331 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 330 Ohms
Description: SULFUR TOLERANT CHIP RESISTORS :
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 330 Ohms
на замовлення 7932 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.27 грн |
| 27+ | 11.61 грн |
| 100+ | 4.53 грн |
| 1000+ | 1.78 грн |
| 2500+ | 1.63 грн |
| BR24T32FVJ-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-BJ
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC EEPROM 32KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-BJ
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BR24T32FVT-WE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC EEPROM 32KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RW4E045AJTCL1 |
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Виробник: Rohm Semiconductor
Description: NCH 30V 4.5A POWER MOSFET: RW4E0
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: DFN1616-7T
Description: NCH 30V 4.5A POWER MOSFET: RW4E0
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: DFN1616-7T
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RW4E045ATTCL1 |
![]() |
Виробник: Rohm Semiconductor
Description: PCH -30V -4.5A POWER MOSFET. RW4
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN1616-7T
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
Description: PCH -30V -4.5A POWER MOSFET. RW4
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN1616-7T
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RW4E045ATTCL1 |
![]() |
Виробник: Rohm Semiconductor
Description: PCH -30V -4.5A POWER MOSFET. RW4
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
Description: PCH -30V -4.5A POWER MOSFET. RW4
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.39 грн |
| 10+ | 54.67 грн |
| 100+ | 35.95 грн |
| 500+ | 26.19 грн |
| 1000+ | 23.76 грн |
| R8008ANJGTL |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 800V 8A POWER MOSFET : R8008
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: NCH 800V 8A POWER MOSFET : R8008
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| R8008ANJGTL |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 800V 8A POWER MOSFET : R8008
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: NCH 800V 8A POWER MOSFET : R8008
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263S
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 851 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 481.31 грн |
| 10+ | 311.61 грн |
| 100+ | 225.75 грн |
| 500+ | 177.51 грн |
| R8003KNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: 800V 3A, TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
Description: 800V 3A, TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
на замовлення 477 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 176.82 грн |
| 10+ | 141.49 грн |
| 100+ | 112.60 грн |
| R8002KNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: 800V 1.6A, TO-220FM, HIGH-SPEED
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Description: 800V 1.6A, TO-220FM, HIGH-SPEED
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
на замовлення 914 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.37 грн |
| 10+ | 127.59 грн |
| 50+ | 97.46 грн |
| 100+ | 82.35 грн |
| 500+ | 66.36 грн |
| R8006KNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| R8006KNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
Description: HIGH-SPEED SWITCHING NCH 800V 6A
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
на замовлення 242 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 320.34 грн |
| 10+ | 203.11 грн |
| 50+ | 157.93 грн |
| 100+ | 134.58 грн |
| R8002KND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 1.
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: TO-252GE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Description: HIGH-SPEED SWITCHING NCH 800V 1.
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Supplier Device Package: TO-252GE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| R8002KND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 1.
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252GE
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
Description: HIGH-SPEED SWITCHING NCH 800V 1.
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252GE
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
на замовлення 396 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.31 грн |
| 10+ | 88.80 грн |
| 100+ | 60.14 грн |
| R8009KNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 9A
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: HIGH-SPEED SWITCHING NCH 800V 9A
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 138.17 грн |
| R8009KNXC7G |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 9A
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: HIGH-SPEED SWITCHING NCH 800V 9A
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
на замовлення 1241 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 377.43 грн |
| 10+ | 241.13 грн |
| 50+ | 188.87 грн |
| 100+ | 161.44 грн |
| 500+ | 143.51 грн |
| R8003KND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
Description: HIGH-SPEED SWITCHING NCH 800V 3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| R8003KND3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
Description: HIGH-SPEED SWITCHING NCH 800V 3A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 45W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 2mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
на замовлення 678 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.37 грн |
| 10+ | 127.97 грн |
| 100+ | 88.51 грн |
| 500+ | 69.55 грн |
| RSS070P05HZGTB |
![]() |
Виробник: Rohm Semiconductor
Description: PCH -45V -7A POWER MOSFET. RSS07
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Description: PCH -45V -7A POWER MOSFET. RSS07
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RSS070P05HZGTB |
![]() |
Виробник: Rohm Semiconductor
Description: PCH -45V -7A POWER MOSFET. RSS07
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Qualification: AEC-Q101
Description: PCH -45V -7A POWER MOSFET. RSS07
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Qualification: AEC-Q101
на замовлення 4563 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.60 грн |
| 10+ | 89.72 грн |
| 100+ | 71.39 грн |
| 500+ | 56.69 грн |
| 1000+ | 48.10 грн |
| RGTV80TS65GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 78A TO-247N
Power - Max: 234 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 81 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.02mJ (on), 710µJ (off)
Td (on/off) @ 25°C: 39ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 78A TO-247N
Power - Max: 234 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 81 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.02mJ (on), 710µJ (off)
Td (on/off) @ 25°C: 39ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247N
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.61 грн |
| 30+ | 116.77 грн |
| 120+ | 94.97 грн |
| RGTV80TK65GVC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 39A TO-3PFM
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 85 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 39 A
Part Status: Active
Gate Charge: 81 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.02mJ (on), 710µJ (off)
Td (on/off) @ 25°C: 39ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Description: IGBT TRENCH FS 650V 39A TO-3PFM
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 85 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 39 A
Part Status: Active
Gate Charge: 81 nC
Test Condition: 400V, 40A, 10Ohm, 15V
Switching Energy: 1.02mJ (on), 710µJ (off)
Td (on/off) @ 25°C: 39ns/113ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 245.81 грн |
| 30+ | 129.02 грн |
| 120+ | 105.30 грн |
| BD7800FP-E2 |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5A
Description: IC REG LINEAR 5A
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| BZX84C3V0LYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 3V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3V 250MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±6.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| BZX84C3V0LYFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 3V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±6.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3V 250MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±6.67%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
на замовлення 1197 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.37 грн |
| 21+ | 14.89 грн |
| 100+ | 9.34 грн |
| 500+ | 6.49 грн |
| 1000+ | 5.76 грн |
| MMBZ27VCLYFHT116 |
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Виробник: Rohm Semiconductor
Description: 22V, SOT-23, CATHODE COMMON, AUT
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 38V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 2
Supplier Device Package: SOT-23
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: 22V, SOT-23, CATHODE COMMON, AUT
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 38V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 2
Supplier Device Package: SOT-23
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.19 грн |
| 6000+ | 10.23 грн |
| MMBZ27VCLYFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: 22V, SOT-23, CATHODE COMMON, AUT
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 38V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 2
Supplier Device Package: SOT-23
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: 22V, SOT-23, CATHODE COMMON, AUT
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 38V
Voltage - Breakdown (Min): 25.65V
Unidirectional Channels: 2
Supplier Device Package: SOT-23
Voltage - Reverse Standoff (Typ): 22V (Max)
Current - Peak Pulse (10/1000µs): 1A
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.30 грн |
| 12+ | 27.34 грн |
| 100+ | 19.01 грн |
| 500+ | 13.92 грн |
| 1000+ | 11.32 грн |
| BUS1DJC3GWZ-E2 |
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Виробник: Rohm Semiconductor
Description: 1CH ULTRA SMALL HIGH SIDE LOAD S
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: UCSP30L1
Fault Protection: Short Circuit
Part Status: Active
Description: 1CH ULTRA SMALL HIGH SIDE LOAD S
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: UCSP30L1
Fault Protection: Short Circuit
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BUS1DJC3GWZ-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: 1CH ULTRA SMALL HIGH SIDE LOAD S
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: UCSP30L1
Fault Protection: Short Circuit
Part Status: Active
Description: 1CH ULTRA SMALL HIGH SIDE LOAD S
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: UCSP30L1
Fault Protection: Short Circuit
Part Status: Active
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