Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104130) > Сторінка 903 з 1736
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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2SB1412TLQ | Rohm Semiconductor |
Description: TRANS PNP 20V 5A CPT3Power - Max: 10 W Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 5 A Part Status: Not For New Designs Supplier Device Package: CPT3 Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Current - Collector Cutoff (Max): 500nA (ICBO) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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SFR18EZPJ000 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS :Tolerance: Jumper Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 1206 (3216 Metric) Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 0 Ohms |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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SFR18EZPJ000 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS :Tolerance: Jumper Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 0 Ohms |
на замовлення 4932 шт: термін постачання 21-31 дні (днів) |
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BR25H128FJ-5ACE2 | Rohm Semiconductor |
Description: IC EEPROM 128KBIT SPI 8SOPJMounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Memory Organization: 16K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 3.5ms Supplier Device Package: 8-SOP-J Memory Format: EEPROM Clock Frequency: 20 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 128Kbit |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BR25H128FJ-5ACE2 | Rohm Semiconductor |
Description: IC EEPROM 128KBIT SPI 8SOPJDigiKey Programmable: Not Verified Memory Organization: 16K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 3.5ms Supplier Device Package: 8-SOP-J Memory Format: EEPROM Clock Frequency: 20 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 128Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2561 шт: термін постачання 21-31 дні (днів) |
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BR25H128F-2LBH2 | Rohm Semiconductor |
Description: IC EEPROM 128KBIT SPI 8SOPDigiKey Programmable: Not Verified Memory Organization: 16K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 4ms Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 128Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||||||
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BR25H128F-2LBH2 | Rohm Semiconductor |
Description: IC EEPROM 128KBIT SPI 8SOPMemory Size: 128Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Memory Organization: 16K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 4ms Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile |
на замовлення 242 шт: термін постачання 21-31 дні (днів) |
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BR24H128F-5ACE2 | Rohm Semiconductor |
Description: 125 OPERATION IC BUS EEPROM FOR |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BR24H128FJ-5ACE2 | Rohm Semiconductor |
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Grade: Automotive Write Cycle Time - Word, Page: 3.5ms Memory Interface: I2C Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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BR24H128FJ-5ACE2 | Rohm Semiconductor |
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Grade: Automotive Write Cycle Time - Word, Page: 3.5ms Memory Interface: I2C Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 8700 шт: термін постачання 21-31 дні (днів) |
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BR24H128FVM-5ACTR | Rohm Semiconductor |
Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Grade: Automotive Write Cycle Time - Word, Page: 3.5ms Memory Interface: I2C Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BR24H128FVM-5ACTR | Rohm Semiconductor |
Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Grade: Automotive Write Cycle Time - Word, Page: 3.5ms Memory Interface: I2C Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 6117 шт: термін постачання 21-31 дні (днів) |
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BR35H128F-WCE2 | Rohm Semiconductor |
Description: IC EEPROM 128KBIT SPI 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BR35H128F-WCE2 | Rohm Semiconductor |
Description: IC EEPROM 128KBIT SPI 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BR35H128FJ-WCE2 | Rohm Semiconductor |
Description: IC EEPROM 128KBIT SPI 8SOPJPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BR35H128FJ-WCE2 | Rohm Semiconductor |
Description: IC EEPROM 128KBIT SPI 8SOPJPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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DTA043XUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V UMT3FFrequency - Transition: 250 MHz Power - Max: 200 mW Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: UMT3F DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DTA043XUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V UMT3FResistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: UMT3F DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DTA044TMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V VMT3Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V Supplier Device Package: VMT3 Current - Collector (Ic) (Max): 60 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistors Included: R1 Only |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||
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DTA044TEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V EMT3FPackaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 60 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistors Included: R1 Only |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA143ZEFRATL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.1A EMT3Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DTA143ZEFRATL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.1A EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 2042 шт: термін постачання 21-31 дні (днів) |
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RN731VFHTE-17 | Rohm Semiconductor |
Description: RF DIODE PIN 50V UMD2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RN731VFHTE-17 | Rohm Semiconductor |
Description: RF DIODE PIN 50V UMD2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD7694FJ-E2 | Rohm Semiconductor |
Description: POWER FACTOR CORRECTION CONTROLLCurrent - Startup: 100 µA Part Status: Active Supplier Device Package: 8-SOP-J Mode: Continuous Conduction (CCM) Voltage - Supply: 10V ~ 38V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BD7694FJ-E2 | Rohm Semiconductor |
Description: POWER FACTOR CORRECTION CONTROLLCurrent - Startup: 100 µA Part Status: Active Supplier Device Package: 8-SOP-J Mode: Continuous Conduction (CCM) Voltage - Supply: 10V ~ 38V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2495 шт: термін постачання 21-31 дні (днів) |
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SMLA12ENTT86 | Rohm Semiconductor |
Description: LED GREEN 1611 SMD R/APackaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Color: Green Size / Dimension: 1.60mm L x 1.15mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 140mcd Voltage - Forward (Vf) (Typ): 3V Current - Test: 5mA Height (Max): 0.65mm Wavelength - Dominant: 527nm Supplier Device Package: 1611(0605) Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.55mm |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SMLA12ENTT86 | Rohm Semiconductor |
Description: LED GREEN 1611 SMD R/AHeight (Max): 0.65mm Current - Test: 5mA Voltage - Forward (Vf) (Typ): 3V Millicandela Rating: 140mcd Mounting Type: Surface Mount, Right Angle Size / Dimension: 1.60mm L x 1.15mm W Color: Green Package / Case: 2-SMD, No Lead Packaging: Cut Tape (CT) Lens Size: 1.20mm x 0.55mm Lens Style: Rectangle with Flat Top Supplier Device Package: 1611(0605) Wavelength - Dominant: 527nm |
на замовлення 7462 шт: термін постачання 21-31 дні (днів) |
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SP8M21HZGTB | Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 6A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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SP8M21HZGTB | Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 6A 8SOPSupplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Drain to Source Voltage (Vdss): 45V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 1900 шт: термін постачання 21-31 дні (днів) |
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SP8M41HZGTB | Rohm Semiconductor |
Description: MOSFET N/P-CH 80V 3.4A 8SOPQualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta) Drain to Source Voltage (Vdss): 80V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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SP8M41HZGTB | Rohm Semiconductor |
Description: MOSFET N/P-CH 80V 3.4A 8SOPQualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta) Drain to Source Voltage (Vdss): 80V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 1889 шт: термін постачання 21-31 дні (днів) |
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SP8M51HZGTB | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 3A 8SOPPart Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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SP8M51HZGTB | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 3A 8SOPVgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-SOP |
на замовлення 718 шт: термін постачання 21-31 дні (днів) |
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SP8M24HZGTB | Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 4.5A 8SOPPart Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta) Drain to Source Voltage (Vdss): 45V Power - Max: 1.4W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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RR274EA-400FHTR | Rohm Semiconductor |
Description: DIODE ARRAY GP 400V 500MA TSMD5Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 500mA Supplier Device Package: TSMD5 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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SCS230AE2GC11 | Rohm Semiconductor |
Description: DIODE ARRAY SIC 650V 15A TO-247NTechnology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Current - Reverse Leakage @ Vr: 300 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-247N Current - Average Rectified (Io) (per Diode): 15A (DC) Diode Configuration: 1 Pair Common Cathode |
на замовлення 316 шт: термін постачання 21-31 дні (днів) |
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SCS220AGC17 | Rohm Semiconductor |
Description: DIODE SIC 650V 20A TO220ACFPCurrent - Reverse Leakage @ Vr: 400 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-220ACFP Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 730pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
на замовлення 690 шт: термін постачання 21-31 дні (днів) |
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SCS212AGC17 | Rohm Semiconductor |
Description: DIODE SIC 650V 12A TO220ACFPPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 438pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Current - Reverse Leakage @ Vr: 240 µA @ 600 V |
на замовлення 933 шт: термін постачання 21-31 дні (днів) |
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SCS220KGC17 | Rohm Semiconductor |
Description: DIODE SIC 1.2KV 20A TO220ACFPPackage / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 400 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-220ACFP Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole |
на замовлення 991 шт: термін постачання 21-31 дні (днів) |
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SCS220KE2GC11 | Rohm Semiconductor |
Description: DIODE ARR SIC 1200V 10A TO-247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: TO-247N Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 756 шт: термін постачання 21-31 дні (днів) |
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SCS230KE2GC11 | Rohm Semiconductor |
Description: DIODE ARR SIC 1200V 15A TO-247NCurrent - Reverse Leakage @ Vr: 300 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-247N Current - Average Rectified (Io) (per Diode): 15A (DC) Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 344 шт: термін постачання 21-31 дні (днів) |
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SCS220AE2GC11 | Rohm Semiconductor |
Description: DIODE ARRAY SIC 650V 10A TO-247NCurrent - Reverse Leakage @ Vr: 200 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-247N Current - Average Rectified (Io) (per Diode): 10A (DC) Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 363 шт: термін постачання 21-31 дні (днів) |
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SCS220AEGC11 | Rohm Semiconductor |
Description: DIODE SIL CARBIDE 650V 20A TO247Current - Reverse Leakage @ Vr: 400 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-247 Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 730pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 345 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD4223 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD4223 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SML522BUNWT86 | Rohm Semiconductor |
Description: LED BLUE/RED DIFFUSED SMDPackaging: Tape & Reel (TR) Lens Size: 1.30mm x 1.10mm Lens Style: Rectangle with Flat Top Lens Transparency: Diffused Wavelength - Dominant: 470nm Blue, 624nm Red Height (Max): 0.70mm Current - Test: 5mA Blue, 5mA Red Lens Color: White Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red Configuration: Independent Millicandela Rating: 22mcd Blue, 21mcd Red Mounting Type: Surface Mount Size / Dimension: 1.50mm L x 1.30mm W Color: Blue, Red Package / Case: 4-SMD, No Lead |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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SML522BUNWT86 | Rohm Semiconductor |
Description: LED BLUE/RED DIFFUSED SMDLens Transparency: Diffused Wavelength - Dominant: 470nm Blue, 624nm Red Height (Max): 0.70mm Current - Test: 5mA Blue, 5mA Red Lens Color: White Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red Configuration: Independent Millicandela Rating: 22mcd Blue, 21mcd Red Mounting Type: Surface Mount Size / Dimension: 1.50mm L x 1.30mm W Color: Blue, Red Package / Case: 4-SMD, No Lead Packaging: Cut Tape (CT) Lens Size: 1.30mm x 1.10mm Lens Style: Rectangle with Flat Top |
на замовлення 232 шт: термін постачання 21-31 дні (днів) |
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RQ6E045SNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4.5A TSMT6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RQ6E045SNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4.5A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SH8K39GZETB | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 8A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 200µA Supplier Device Package: 8-SOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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SH8K39GZETB | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 8A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 200µA Supplier Device Package: 8-SOP |
на замовлення 2424 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPF1212 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPF1212 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS |
на замовлення 9997 шт: термін постачання 21-31 дні (днів) |
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BD50GC0MEFJ-LBH2 | Rohm Semiconductor |
Description: 1A 5V, FIXED OUTPUT, HIGH-ACCURAPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1.2 mA Voltage - Input (Max): 14V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 5V Control Features: Enable, Soft Start Part Status: Active Voltage Dropout (Max): 1.2V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||||||
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BD50GC0MEFJ-LBH2 | Rohm Semiconductor |
Description: 1A 5V, FIXED OUTPUT, HIGH-ACCURAPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1.2 mA Voltage - Input (Max): 14V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 5V Control Features: Enable, Soft Start Part Status: Active Voltage Dropout (Max): 1.2V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit |
на замовлення 104 шт: термін постачання 21-31 дні (днів) |
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BD50HC0MEFJ-LBH2 | Rohm Semiconductor |
Description: IC REG LINEAR 5V 1A 8-HTSOP-JPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1.2 mA Voltage - Input (Max): 8V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 5V Control Features: Enable, Soft Start Part Status: Active Voltage Dropout (Max): 1.2V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||||||
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BD50HC0MEFJ-LBH2 | Rohm Semiconductor |
Description: IC REG LINEAR 5V 1A 8-HTSOP-JPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1.2 mA Voltage - Input (Max): 8V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 5V Control Features: Enable, Soft Start Part Status: Active Voltage Dropout (Max): 1.2V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit |
на замовлення 249 шт: термін постачання 21-31 дні (днів) |
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RFN20TF6SC9 | Rohm Semiconductor |
Description: DIODE STANDARD 600V 20A TO220NFMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 433 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPJ560 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORS :Resistance: 56 Ohms Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 1206 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Temperature Coefficient: ±200ppm/°C Package / Case: 1206 (3216 Metric) Features: Anti-Sulfur, Automotive AEC-Q200 Tolerance: ±5% Power (Watts): 0.25W, 1/4W Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| 2SB1412TLQ |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 20V 5A CPT3
Power - Max: 10 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Part Status: Not For New Designs
Supplier Device Package: CPT3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Collector Cutoff (Max): 500nA (ICBO)
Description: TRANS PNP 20V 5A CPT3
Power - Max: 10 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Part Status: Not For New Designs
Supplier Device Package: CPT3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Collector Cutoff (Max): 500nA (ICBO)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SFR18EZPJ000 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Tolerance: Jumper
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 0 Ohms
Description: SULFUR TOLERANT CHIP RESISTORS :
Tolerance: Jumper
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 0 Ohms
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SFR18EZPJ000 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Tolerance: Jumper
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 0 Ohms
Description: SULFUR TOLERANT CHIP RESISTORS :
Tolerance: Jumper
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 0 Ohms
на замовлення 4932 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.20 грн |
| 48+ | 6.36 грн |
| 71+ | 4.26 грн |
| 100+ | 3.42 грн |
| 500+ | 2.45 грн |
| 1000+ | 2.16 грн |
| BR25H128FJ-5ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 3.5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Description: IC EEPROM 128KBIT SPI 8SOPJ
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 3.5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BR25H128FJ-5ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 3.5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 128KBIT SPI 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 3.5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2561 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.21 грн |
| 10+ | 75.76 грн |
| 25+ | 73.68 грн |
| 50+ | 68.81 грн |
| 100+ | 61.51 грн |
| 250+ | 61.33 грн |
| 500+ | 59.41 грн |
| 1000+ | 56.89 грн |
| BR25H128F-2LBH2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC EEPROM 128KBIT SPI 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| BR25H128F-2LBH2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Description: IC EEPROM 128KBIT SPI 8SOP
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
на замовлення 242 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.22 грн |
| 10+ | 137.31 грн |
| 25+ | 133.36 грн |
| 50+ | 122.35 грн |
| 100+ | 119.52 грн |
| BR24H128F-5ACE2 |
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Виробник: Rohm Semiconductor
Description: 125 OPERATION IC BUS EEPROM FOR
Description: 125 OPERATION IC BUS EEPROM FOR
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BR24H128FJ-5ACE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 37.90 грн |
| BR24H128FJ-5ACE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 8700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.15 грн |
| 10+ | 41.88 грн |
| 25+ | 41.37 грн |
| 50+ | 38.60 грн |
| 100+ | 34.51 грн |
| 250+ | 34.25 грн |
| BR24H128FVM-5ACTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 49.62 грн |
| BR24H128FVM-5ACTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT I2C 1MHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Grade: Automotive
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 6117 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.90 грн |
| 10+ | 61.40 грн |
| 25+ | 60.64 грн |
| 50+ | 56.55 грн |
| 100+ | 50.58 грн |
| 250+ | 50.15 грн |
| 500+ | 48.59 грн |
| 1000+ | 46.85 грн |
| BR35H128F-WCE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 129.12 грн |
| BR35H128F-WCE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT SPI 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BR35H128FJ-WCE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 81.05 грн |
| BR35H128FJ-WCE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT SPI 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DTA043XUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V UMT3F
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.54 грн |
| 6000+ | 3.06 грн |
| DTA043XUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V UMT3F
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.09 грн |
| 30+ | 10.25 грн |
| 100+ | 6.36 грн |
| 500+ | 4.37 грн |
| 1000+ | 3.86 грн |
| DTA044TMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| DTA044TEBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.17 грн |
| DTA143ZEFRATL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DTA143ZEFRATL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 2042 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.20 грн |
| 38+ | 7.93 грн |
| 100+ | 4.93 грн |
| 500+ | 3.38 грн |
| 1000+ | 2.97 грн |
| RN731VFHTE-17 |
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Виробник: Rohm Semiconductor
Description: RF DIODE PIN 50V UMD2
Description: RF DIODE PIN 50V UMD2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN731VFHTE-17 |
![]() |
Виробник: Rohm Semiconductor
Description: RF DIODE PIN 50V UMD2
Description: RF DIODE PIN 50V UMD2
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В кошику
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| BD7694FJ-E2 |
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Виробник: Rohm Semiconductor
Description: POWER FACTOR CORRECTION CONTROLL
Current - Startup: 100 µA
Part Status: Active
Supplier Device Package: 8-SOP-J
Mode: Continuous Conduction (CCM)
Voltage - Supply: 10V ~ 38V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: POWER FACTOR CORRECTION CONTROLL
Current - Startup: 100 µA
Part Status: Active
Supplier Device Package: 8-SOP-J
Mode: Continuous Conduction (CCM)
Voltage - Supply: 10V ~ 38V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD7694FJ-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: POWER FACTOR CORRECTION CONTROLL
Current - Startup: 100 µA
Part Status: Active
Supplier Device Package: 8-SOP-J
Mode: Continuous Conduction (CCM)
Voltage - Supply: 10V ~ 38V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: POWER FACTOR CORRECTION CONTROLL
Current - Startup: 100 µA
Part Status: Active
Supplier Device Package: 8-SOP-J
Mode: Continuous Conduction (CCM)
Voltage - Supply: 10V ~ 38V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.25 грн |
| 10+ | 40.38 грн |
| 25+ | 36.38 грн |
| 100+ | 30.00 грн |
| 250+ | 28.02 грн |
| 500+ | 26.83 грн |
| 1000+ | 25.43 грн |
| SMLA12ENTT86 |
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Виробник: Rohm Semiconductor
Description: LED GREEN 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
Description: LED GREEN 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 140mcd
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 5mA
Height (Max): 0.65mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1611(0605)
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 24.27 грн |
| SMLA12ENTT86 |
![]() |
Виробник: Rohm Semiconductor
Description: LED GREEN 1611 SMD R/A
Height (Max): 0.65mm
Current - Test: 5mA
Voltage - Forward (Vf) (Typ): 3V
Millicandela Rating: 140mcd
Mounting Type: Surface Mount, Right Angle
Size / Dimension: 1.60mm L x 1.15mm W
Color: Green
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Lens Size: 1.20mm x 0.55mm
Lens Style: Rectangle with Flat Top
Supplier Device Package: 1611(0605)
Wavelength - Dominant: 527nm
Description: LED GREEN 1611 SMD R/A
Height (Max): 0.65mm
Current - Test: 5mA
Voltage - Forward (Vf) (Typ): 3V
Millicandela Rating: 140mcd
Mounting Type: Surface Mount, Right Angle
Size / Dimension: 1.60mm L x 1.15mm W
Color: Green
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Lens Size: 1.20mm x 0.55mm
Lens Style: Rectangle with Flat Top
Supplier Device Package: 1611(0605)
Wavelength - Dominant: 527nm
на замовлення 7462 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.33 грн |
| 10+ | 50.63 грн |
| 100+ | 37.63 грн |
| 500+ | 29.86 грн |
| 1000+ | 28.09 грн |
| SP8M21HZGTB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 45V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SP8M21HZGTB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 6A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 45V 6A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 238.43 грн |
| 10+ | 149.87 грн |
| 100+ | 104.57 грн |
| 500+ | 85.51 грн |
| SP8M41HZGTB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Drain to Source Voltage (Vdss): 80V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 80V 3.4A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Drain to Source Voltage (Vdss): 80V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SP8M41HZGTB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Drain to Source Voltage (Vdss): 80V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 80V 3.4A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Drain to Source Voltage (Vdss): 80V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 1889 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 157.66 грн |
| 10+ | 97.30 грн |
| 100+ | 66.27 грн |
| 500+ | 49.74 грн |
| 1000+ | 48.51 грн |
| SP8M51HZGTB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 100V 3A 8SOP
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SP8M51HZGTB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 100V 3A 8SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOP
на замовлення 718 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 159.99 грн |
| 10+ | 98.94 грн |
| 100+ | 67.47 грн |
| 500+ | 50.69 грн |
| SP8M24HZGTB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 45V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| RR274EA-400FHTR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE ARRAY GP 400V 500MA TSMD5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: TSMD5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SCS230AE2GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 15A TO-247N
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247N
Current - Average Rectified (Io) (per Diode): 15A (DC)
Diode Configuration: 1 Pair Common Cathode
Description: DIODE ARRAY SIC 650V 15A TO-247N
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247N
Current - Average Rectified (Io) (per Diode): 15A (DC)
Diode Configuration: 1 Pair Common Cathode
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 930.41 грн |
| 10+ | 624.47 грн |
| SCS220AGC17 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIC 650V 20A TO220ACFP
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIC 650V 20A TO220ACFP
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 516.46 грн |
| 50+ | 273.53 грн |
| SCS212AGC17 |
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Виробник: Rohm Semiconductor
Description: DIODE SIC 650V 12A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Description: DIODE SIC 650V 12A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
на замовлення 933 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 448.89 грн |
| 50+ | 230.73 грн |
| 100+ | 211.27 грн |
| 500+ | 166.31 грн |
| SCS220KGC17 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIC 1.2KV 20A TO220ACFP
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Description: DIODE SIC 1.2KV 20A TO220ACFP
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
на замовлення 991 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 866.72 грн |
| 10+ | 586.93 грн |
| 100+ | 538.96 грн |
| SCS220KE2GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SIC 1200V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE ARR SIC 1200V 10A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247N
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 756 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1154.08 грн |
| 30+ | 668.05 грн |
| 120+ | 589.53 грн |
| 510+ | 548.95 грн |
| SCS230KE2GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SIC 1200V 15A TO-247N
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247N
Current - Average Rectified (Io) (per Diode): 15A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARR SIC 1200V 15A TO-247N
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247N
Current - Average Rectified (Io) (per Diode): 15A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 344 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1497.35 грн |
| 10+ | 1033.18 грн |
| SCS220AE2GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SIC 650V 10A TO-247N
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247N
Current - Average Rectified (Io) (per Diode): 10A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARRAY SIC 650V 10A TO-247N
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247N
Current - Average Rectified (Io) (per Diode): 10A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 363 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 752.56 грн |
| 10+ | 498.98 грн |
| SCS220AEGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 20A TO247
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE SIL CARBIDE 650V 20A TO247
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 664.80 грн |
| 10+ | 440.20 грн |
| SDR03EZPD4223 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 1.93 грн |
| 10000+ | 1.74 грн |
| SDR03EZPD4223 |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.31 грн |
| 22+ | 13.69 грн |
| 100+ | 5.34 грн |
| 1000+ | 2.10 грн |
| 2500+ | 1.92 грн |
| SML522BUNWT86 |
![]() |
Виробник: Rohm Semiconductor
Description: LED BLUE/RED DIFFUSED SMD
Packaging: Tape & Reel (TR)
Lens Size: 1.30mm x 1.10mm
Lens Style: Rectangle with Flat Top
Lens Transparency: Diffused
Wavelength - Dominant: 470nm Blue, 624nm Red
Height (Max): 0.70mm
Current - Test: 5mA Blue, 5mA Red
Lens Color: White
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Configuration: Independent
Millicandela Rating: 22mcd Blue, 21mcd Red
Mounting Type: Surface Mount
Size / Dimension: 1.50mm L x 1.30mm W
Color: Blue, Red
Package / Case: 4-SMD, No Lead
Description: LED BLUE/RED DIFFUSED SMD
Packaging: Tape & Reel (TR)
Lens Size: 1.30mm x 1.10mm
Lens Style: Rectangle with Flat Top
Lens Transparency: Diffused
Wavelength - Dominant: 470nm Blue, 624nm Red
Height (Max): 0.70mm
Current - Test: 5mA Blue, 5mA Red
Lens Color: White
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Configuration: Independent
Millicandela Rating: 22mcd Blue, 21mcd Red
Mounting Type: Surface Mount
Size / Dimension: 1.50mm L x 1.30mm W
Color: Blue, Red
Package / Case: 4-SMD, No Lead
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| SML522BUNWT86 |
![]() |
Виробник: Rohm Semiconductor
Description: LED BLUE/RED DIFFUSED SMD
Lens Transparency: Diffused
Wavelength - Dominant: 470nm Blue, 624nm Red
Height (Max): 0.70mm
Current - Test: 5mA Blue, 5mA Red
Lens Color: White
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Configuration: Independent
Millicandela Rating: 22mcd Blue, 21mcd Red
Mounting Type: Surface Mount
Size / Dimension: 1.50mm L x 1.30mm W
Color: Blue, Red
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Lens Size: 1.30mm x 1.10mm
Lens Style: Rectangle with Flat Top
Description: LED BLUE/RED DIFFUSED SMD
Lens Transparency: Diffused
Wavelength - Dominant: 470nm Blue, 624nm Red
Height (Max): 0.70mm
Current - Test: 5mA Blue, 5mA Red
Lens Color: White
Voltage - Forward (Vf) (Typ): 2.9V Blue, 1.9V Red
Configuration: Independent
Millicandela Rating: 22mcd Blue, 21mcd Red
Mounting Type: Surface Mount
Size / Dimension: 1.50mm L x 1.30mm W
Color: Blue, Red
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Lens Size: 1.30mm x 1.10mm
Lens Style: Rectangle with Flat Top
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.63 грн |
| 10+ | 67.16 грн |
| 100+ | 50.26 грн |
| RQ6E045SNTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 17.88 грн |
| RQ6E045SNTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.37 грн |
| 10+ | 39.26 грн |
| 100+ | 27.19 грн |
| 500+ | 21.32 грн |
| 1000+ | 18.15 грн |
| SH8K39GZETB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SH8K39GZETB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 200µA
Supplier Device Package: 8-SOP
на замовлення 2424 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.13 грн |
| 10+ | 134.02 грн |
| 100+ | 92.44 грн |
| 500+ | 70.06 грн |
| 1000+ | 64.69 грн |
| SFR03EZPF1212 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 1.02 грн |
| SFR03EZPF1212 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 9997 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.54 грн |
| 40+ | 7.55 грн |
| 104+ | 2.89 грн |
| 1000+ | 1.19 грн |
| 2500+ | 1.03 грн |
| BD50GC0MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: 1A 5V, FIXED OUTPUT, HIGH-ACCURA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Description: 1A 5V, FIXED OUTPUT, HIGH-ACCURA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| BD50GC0MEFJ-LBH2 |
![]() |
Виробник: Rohm Semiconductor
Description: 1A 5V, FIXED OUTPUT, HIGH-ACCURA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Description: 1A 5V, FIXED OUTPUT, HIGH-ACCURA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 270.27 грн |
| 10+ | 170.89 грн |
| 25+ | 147.72 грн |
| 100+ | 114.19 грн |
| BD50HC0MEFJ-LBH2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 1A 8-HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LINEAR 5V 1A 8-HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| BD50HC0MEFJ-LBH2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 1A 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LINEAR 5V 1A 8-HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 8V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Soft Start
Part Status: Active
Voltage Dropout (Max): 1.2V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 249 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 257.07 грн |
| 10+ | 158.25 грн |
| 25+ | 134.89 грн |
| 100+ | 101.77 грн |
| RFN20TF6SC9 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 433 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 229.88 грн |
| 50+ | 110.48 грн |
| 100+ | 99.76 грн |
| SFR18EZPJ560 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Resistance: 56 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
Description: SULFUR TOLERANT CHIP RESISTORS :
Resistance: 56 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 1206
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 1206 (3216 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 1.53 грн |




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