Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102568) > Сторінка 901 з 1710
Фото | Назва | Виробник | Інформація |
Доступність |
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BD57021MWV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 4.2V ~ 5.3V Applications: Wireless Power Transmitter Current - Supply: 15mA Supplier Device Package: UQFN040V5050 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDR10EZPJ121 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 120 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPJ121 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 120 Ohms |
на замовлення 9318 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ121 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.063W, 1/16W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 120 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFR01MZPJ121 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.063W, 1/16W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 120 Ohms |
на замовлення 9989 шт: термін постачання 21-31 дні (днів) |
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ESR01MZPJ121 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.2W, 1/5W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Part Status: Active Resistance: 120 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESR01MZPJ121 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.2W, 1/5W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Part Status: Active Resistance: 120 Ohms |
на замовлення 8889 шт: термін постачання 21-31 дні (днів) |
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UMT4403U3T106 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 200MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMT4403U3T106 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 200MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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RBR10NS60ATL | Rohm Semiconductor |
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на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBR10NS60ATL | Rohm Semiconductor |
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на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBR30NS60ATL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A Current - Reverse Leakage @ Vr: 600 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBR30NS60ATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A Current - Reverse Leakage @ Vr: 600 µA @ 60 V |
на замовлення 945 шт: термін постачання 21-31 дні (днів) |
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RBR20NS60ATL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBR20NS60ATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBR10NS60AFHTL | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBR10NS60AFHTL | Rohm Semiconductor |
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на замовлення 999 шт: термін постачання 21-31 дні (днів) |
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RBR20NS60AFHTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBR20NS60AFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 855 шт: термін постачання 21-31 дні (днів) |
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RBR30NS60AFHTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A Current - Reverse Leakage @ Vr: 600 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBR30NS60AFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A Current - Reverse Leakage @ Vr: 600 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 1902 шт: термін постачання 21-31 дні (днів) |
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ML620Q156B-628TBZWAX | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: 52-TQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 64KB (32K x 16) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 52-TQFP (10x10) Part Status: Last Time Buy Number of I/O: 34 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BU7232YFVM-CTR | Rohm Semiconductor | Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BU7232YFVM-CTR | Rohm Semiconductor | Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT |
на замовлення 2006 шт: термін постачання 21-31 дні (днів) |
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BD5291FVE-GTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-665 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 650µA Slew Rate: 2.5V/µs Gain Bandwidth Product: 3.2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 100 µV Supplier Device Package: 5-VSOF Part Status: Active Number of Circuits: 1 Current - Output / Channel: 35 mA Voltage - Supply Span (Min): 1.7 V Voltage - Supply Span (Max): 5.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD5291FVE-GTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-665 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 650µA Slew Rate: 2.5V/µs Gain Bandwidth Product: 3.2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 100 µV Supplier Device Package: 5-VSOF Part Status: Active Number of Circuits: 1 Current - Output / Channel: 35 mA Voltage - Supply Span (Min): 1.7 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2894 шт: термін постачання 21-31 дні (днів) |
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RFUH10TB4SNZC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 430 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 430 V |
на замовлення 726 шт: термін постачання 21-31 дні (днів) |
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RGT20TM65DGC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/32ns Test Condition: 400V, 10A, 10Ohm, 15V Gate Charge: 22 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 30 A Power - Max: 25 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFN10TF6SC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 840 шт: термін постачання 21-31 дні (днів) |
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DA204UMTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
ML610Q174-482GAZWAX | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x20) Part Status: Last Time Buy Number of I/O: 49 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ML620Q151BT-NNNTBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ML620Q151BT-108TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ML620Q151BT-106TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ML620Q151BT-110TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ML620Q151BT-103TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ML620Q151BT-Z99TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ML620Q151BT-104TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ML620Q151BT-107TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
ML620Q151BT-105TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SA1579U3HZGT106R | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Frequency - Transition: 140MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 200 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SA1579U3HZGT106R | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Frequency - Transition: 140MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 200 mW |
на замовлення 5999 шт: термін постачання 21-31 дні (днів) |
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ML610Q174-499GAZWAX | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x20) Part Status: Last Time Buy Number of I/O: 49 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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R6014YNXC7G | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.4mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V |
на замовлення 1033 шт: термін постачання 21-31 дні (днів) |
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MMBZ33VALYT116 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS116HYFHT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS116HYFHT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 825 шт: термін постачання 21-31 дні (днів) |
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ML610Q174-467GAZWAX | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x20) Part Status: Last Time Buy Number of I/O: 49 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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UT6K3TCR1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UT6KB5TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UT6KB5TCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
на замовлення 2062 шт: термін постачання 21-31 дні (днів) |
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UT6JC5TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UT6JC5TCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
на замовлення 816 шт: термін постачання 21-31 дні (днів) |
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2SCR564F3TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Frequency - Transition: 280MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SCR564F3TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Frequency - Transition: 280MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
на замовлення 5939 шт: термін постачання 21-31 дні (днів) |
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2SCR563F3TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Frequency - Transition: 200MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SCR563F3TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Frequency - Transition: 200MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 2134 шт: термін постачання 21-31 дні (днів) |
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2SAR564F3TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 360mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Frequency - Transition: 220MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SAR564F3TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 360mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Frequency - Transition: 220MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
на замовлення 2999 шт: термін постачання 21-31 дні (днів) |
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2SCR567F3TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 80mA, 800mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 220MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. |
BD57021MWV-E2 |
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Виробник: Rohm Semiconductor
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 4.2V ~ 5.3V
Applications: Wireless Power Transmitter
Current - Supply: 15mA
Supplier Device Package: UQFN040V5050
Part Status: Obsolete
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 4.2V ~ 5.3V
Applications: Wireless Power Transmitter
Current - Supply: 15mA
Supplier Device Package: UQFN040V5050
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
SDR10EZPJ121 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 2.45 грн |
SDR10EZPJ121 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
на замовлення 9318 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 17.47 грн |
36+ | 8.56 грн |
54+ | 5.73 грн |
100+ | 4.58 грн |
500+ | 3.29 грн |
1000+ | 2.89 грн |
SFR01MZPJ121 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 120 Ohms
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 120 Ohms
товару немає в наявності
В кошику
од. на суму грн.
SFR01MZPJ121 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 120 Ohms
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 120 Ohms
на замовлення 9989 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
34+ | 9.53 грн |
73+ | 4.20 грн |
112+ | 2.75 грн |
132+ | 2.19 грн |
500+ | 1.54 грн |
1000+ | 1.34 грн |
5000+ | 0.99 грн |
ESR01MZPJ121 |
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Виробник: Rohm Semiconductor
Description: RES 120 OHM 5% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 120 Ohms
Description: RES 120 OHM 5% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 120 Ohms
товару немає в наявності
В кошику
од. на суму грн.
ESR01MZPJ121 |
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Виробник: Rohm Semiconductor
Description: RES 120 OHM 5% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 120 Ohms
Description: RES 120 OHM 5% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 120 Ohms
на замовлення 8889 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 17.47 грн |
36+ | 8.64 грн |
52+ | 5.95 грн |
100+ | 4.81 грн |
500+ | 3.53 грн |
1000+ | 3.13 грн |
5000+ | 2.41 грн |
UMT4403U3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 40V 0.6A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Description: TRANS PNP 40V 0.6A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
товару немає в наявності
В кошику
од. на суму грн.
UMT4403U3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 40V 0.6A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Description: TRANS PNP 40V 0.6A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.08 грн |
12+ | 26.91 грн |
100+ | 18.32 грн |
500+ | 13.50 грн |
1000+ | 12.28 грн |
RBR10NS60ATL |
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Виробник: Rohm Semiconductor
Description: RBR10NS60A IS SCHOTTKY BARRIER D
Description: RBR10NS60A IS SCHOTTKY BARRIER D
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 45.34 грн |
RBR10NS60ATL |
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Виробник: Rohm Semiconductor
Description: RBR10NS60A IS SCHOTTKY BARRIER D
Description: RBR10NS60A IS SCHOTTKY BARRIER D
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 99.24 грн |
10+ | 85.85 грн |
100+ | 66.95 грн |
500+ | 51.90 грн |
RBR30NS60ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
RBR30NS60ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
на замовлення 945 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 149.25 грн |
10+ | 97.93 грн |
100+ | 69.71 грн |
500+ | 53.67 грн |
RBR20NS60ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 53.53 грн |
RBR20NS60ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 112.73 грн |
RBR10NS60AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
товару немає в наявності
В кошику
од. на суму грн.
RBR10NS60AFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
на замовлення 999 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 88.92 грн |
10+ | 76.60 грн |
100+ | 59.68 грн |
500+ | 46.27 грн |
RBR20NS60AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
RBR20NS60AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
на замовлення 855 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 102.41 грн |
10+ | 80.58 грн |
100+ | 62.68 грн |
500+ | 49.86 грн |
RBR30NS60AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 50.02 грн |
RBR30NS60AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
на замовлення 1902 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 137.34 грн |
10+ | 89.60 грн |
100+ | 63.54 грн |
500+ | 48.75 грн |
ML620Q156B-628TBZWAX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 52TQFP
Packaging: Bulk
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 52-TQFP (10x10)
Part Status: Last Time Buy
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 52TQFP
Packaging: Bulk
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 52-TQFP (10x10)
Part Status: Last Time Buy
Number of I/O: 34
DigiKey Programmable: Not Verified
товару немає в наявності
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од. на суму грн.
BU7232YFVM-CTR |
Виробник: Rohm Semiconductor
Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
товару немає в наявності
В кошику
од. на суму грн.
BU7232YFVM-CTR |
Виробник: Rohm Semiconductor
Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
на замовлення 2006 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 118.29 грн |
10+ | 102.44 грн |
25+ | 96.66 грн |
100+ | 77.30 грн |
250+ | 72.57 грн |
500+ | 63.50 грн |
1000+ | 51.75 грн |
BD5291FVE-GTR |
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Виробник: Rohm Semiconductor
Description: INPUT/OUTPUT FULL SWING LOW INPU
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 100 µV
Supplier Device Package: 5-VSOF
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
Description: INPUT/OUTPUT FULL SWING LOW INPU
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 100 µV
Supplier Device Package: 5-VSOF
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
товару немає в наявності
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од. на суму грн.
BD5291FVE-GTR |
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Виробник: Rohm Semiconductor
Description: INPUT/OUTPUT FULL SWING LOW INPU
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 100 µV
Supplier Device Package: 5-VSOF
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
Description: INPUT/OUTPUT FULL SWING LOW INPU
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 100 µV
Supplier Device Package: 5-VSOF
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2894 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 67.48 грн |
10+ | 57.80 грн |
25+ | 54.89 грн |
100+ | 42.32 грн |
250+ | 39.56 грн |
500+ | 34.96 грн |
1000+ | 27.15 грн |
RFUH10TB4SNZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 430V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
Description: DIODE STANDARD 430V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
на замовлення 726 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 125.43 грн |
50+ | 85.35 грн |
100+ | 76.75 грн |
500+ | 59.49 грн |
RGT20TM65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/32ns
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 25 W
Description: IGBT TRENCH FS 650V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/32ns
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 25 W
товару немає в наявності
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RFN10TF6SC9 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 840 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 100.82 грн |
50+ | 63.53 грн |
100+ | 61.98 грн |
500+ | 27.12 грн |
DA204UMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 20V 100MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Description: DIODE ARRAY GP 20V 100MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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ML610Q174-482GAZWAX |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
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ML620Q151BT-NNNTBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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ML620Q151BT-108TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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ML620Q151BT-106TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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ML620Q151BT-110TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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ML620Q151BT-103TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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ML620Q151BT-Z99TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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ML620Q151BT-104TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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ML620Q151BT-107TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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ML620Q151BT-105TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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2SA1579U3HZGT106R |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 9.06 грн |
2SA1579U3HZGT106R |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
на замовлення 5999 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 40.49 грн |
13+ | 23.85 грн |
100+ | 15.21 грн |
500+ | 10.76 грн |
1000+ | 9.63 грн |
ML610Q174-499GAZWAX |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
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R6014YNXC7G |
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Виробник: Rohm Semiconductor
Description: 600V 9A TO-220FM, FAST SWITCHING
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
Description: 600V 9A TO-220FM, FAST SWITCHING
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
на замовлення 1033 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 165.13 грн |
50+ | 103.66 грн |
100+ | 62.90 грн |
1000+ | 54.36 грн |
MMBZ33VALYT116 |
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Виробник: Rohm Semiconductor
Description: 26V, SOT-23, DUAL LINE, ANODE CO
Description: 26V, SOT-23, DUAL LINE, ANODE CO
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BAS116HYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 80V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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BAS116HYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 825 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.79 грн |
18+ | 17.43 грн |
100+ | 10.99 грн |
500+ | 7.24 грн |
ML610Q174-467GAZWAX |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
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UT6K3TCR1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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UT6KB5TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2N-CH 40V 5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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UT6KB5TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2N-CH 40V 5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
на замовлення 2062 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 46.05 грн |
10+ | 31.50 грн |
25+ | 28.29 грн |
100+ | 23.20 грн |
250+ | 21.60 грн |
500+ | 20.64 грн |
1000+ | 19.52 грн |
UT6JC5TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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UT6JC5TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
на замовлення 816 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 61.13 грн |
10+ | 44.80 грн |
100+ | 32.61 грн |
500+ | 24.44 грн |
2SCR564F3TR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 4A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 4A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 26.05 грн |
2SCR564F3TR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 4A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 4A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
на замовлення 5939 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 100.03 грн |
10+ | 60.62 грн |
100+ | 40.24 грн |
500+ | 29.54 грн |
1000+ | 26.90 грн |
2SCR563F3TR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 6A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 6A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
2SCR563F3TR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 6A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 6A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 2134 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 100.03 грн |
10+ | 60.62 грн |
100+ | 40.24 грн |
500+ | 29.54 грн |
1000+ | 26.90 грн |
2SAR564F3TR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 80V 4A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 220MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS PNP 80V 4A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 220MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
2SAR564F3TR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 80V 4A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 220MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS PNP 80V 4A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 220MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 100.03 грн |
10+ | 60.62 грн |
100+ | 40.24 грн |
500+ | 29.54 грн |
1000+ | 26.90 грн |
2SCR567F3TR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 2.5A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Description: TRANS NPN 120V 2.5A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.