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RQ3E160ADTB1 RQ3E160ADTB1 Rohm Semiconductor datasheet?p=RQ3E160AD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 30V 16A MIDDLE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+53.96 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RQ3E160ADTB1 RQ3E160ADTB1 Rohm Semiconductor datasheet?p=RQ3E160AD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 30V 16A MIDDLE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3+127.18 грн
10+109.45 грн
100+85.36 грн
500+66.18 грн
1000+52.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RRQ020P03TCR RRQ020P03TCR Rohm Semiconductor datasheet?p=RRQ020P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
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RRQ020P03TCR RRQ020P03TCR Rohm Semiconductor datasheet?p=RRQ020P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
11+30.59 грн
13+24.96 грн
100+17.34 грн
500+12.70 грн
1000+10.33 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
ESR25JZPF4R70 ESR25JZPF4R70 Rohm Semiconductor esr-e.pdf Description: RES SMD 4.7 OHM 1% 2/3W 1210
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 Ohms
на замовлення 3985 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ESR25JZPF4R70 ESR25JZPF4R70 Rohm Semiconductor esr-e.pdf Description: RES SMD 4.7 OHM 1% 2/3W 1210
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 Ohms
на замовлення 3985 шт:
термін постачання 21-31 дні (днів)
10+32.20 грн
14+23.80 грн
50+13.44 грн
100+9.38 грн
500+6.79 грн
1000+5.17 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ESR25JZPF1002 ESR25JZPF1002 Rohm Semiconductor esr-e.pdf Description: RES 10K OHM 1% 1W 1210
Packaging: Tape & Reel (TR)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 10 kOhms
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ESR25JZPF1002 ESR25JZPF1002 Rohm Semiconductor esr-e.pdf Description: RES 10K OHM 1% 1W 1210
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 10 kOhms
на замовлення 3487 шт:
термін постачання 21-31 дні (днів)
9+36.22 грн
17+18.45 грн
50+12.65 грн
100+10.23 грн
500+7.51 грн
1000+6.65 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ESR25JZPF6R20 ESR25JZPF6R20 Rohm Semiconductor esr-e.pdf Description: RES SMD 6.2 OHM 1% 2/3W 1210
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 6.2 Ohms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+6.60 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
ESR25JZPF6R20 ESR25JZPF6R20 Rohm Semiconductor esr-e.pdf Description: RES SMD 6.2 OHM 1% 2/3W 1210
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 6.2 Ohms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
9+37.03 грн
17+19.07 грн
50+13.10 грн
100+10.59 грн
500+7.77 грн
1000+6.88 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
RSS095N05HZGTB RSS095N05HZGTB Rohm Semiconductor rss095n05hzgtb-e.pdf Description: NCH 45V 9.5A POWER MOSFET: RSS09
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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RSS095N05HZGTB RSS095N05HZGTB Rohm Semiconductor rss095n05hzgtb-e.pdf Description: NCH 45V 9.5A POWER MOSFET: RSS09
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)
2+255.17 грн
10+160.14 грн
100+111.29 грн
500+84.86 грн
1000+78.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
KTR10EZPF1500 KTR10EZPF1500 Rohm Semiconductor ktr-e.pdf Description: RES SMD 150 OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 Ohms
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KTR10EZPF1500 KTR10EZPF1500 Rohm Semiconductor ktr-e.pdf Description: RES SMD 150 OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 Ohms
на замовлення 1086 шт:
термін постачання 21-31 дні (днів)
25+12.88 грн
51+6.12 грн
76+4.11 грн
100+3.29 грн
500+2.36 грн
1000+2.08 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
ESR18EZPF2210 ESR18EZPF2210 Rohm Semiconductor esr-e.pdf Description: RES 221 OHM 1% 3/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 221 Ohms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+1.90 грн
10000+1.66 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ESR18EZPF2210 ESR18EZPF2210 Rohm Semiconductor esr-e.pdf Description: RES 221 OHM 1% 3/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 221 Ohms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
24+13.68 грн
48+6.59 грн
70+4.43 грн
100+3.55 грн
500+2.55 грн
1000+2.24 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
LTR50UZPFLR150 LTR50UZPFLR150 Rohm Semiconductor ltr-low-e.pdf Description: HIGH POWER LOW OHMIC CHIP RESIST
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 150 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+27.78 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
LTR50UZPFLR150 LTR50UZPFLR150 Rohm Semiconductor ltr-low-e.pdf Description: HIGH POWER LOW OHMIC CHIP RESIST
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 150 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5+76.47 грн
10+65.03 грн
50+54.55 грн
100+44.30 грн
500+31.50 грн
1000+26.19 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DTC114EUBTL DTC114EUBTL Rohm Semiconductor dtc114eebtl-e.pdf Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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ML610Q174-447GAZWAAL Rohm Semiconductor ML610Q174_8-31-18.pdf Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
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BD733L2FP-C-EVK Rohm Semiconductor Description: LDO_EVK_BD7XXL2X BD733L2FP-C
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.37V ~ 45V
Current - Output: 200mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: BD733L2-C
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
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SMLP14ECNWT86 SMLP14ECNWT86 Rohm Semiconductor datasheet?p=SMLP14ECNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN DIFFUSED 0402 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Color: Green
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 110mcd
Voltage - Forward (Vf) (Typ): 3V
Lens Color: White
Current - Test: 5mA
Height (Max): 0.25mm
Wavelength - Dominant: 527nm
Supplier Device Package: 0402
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.00mm x 0.60mm
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SMLP14ECNWT86 SMLP14ECNWT86 Rohm Semiconductor datasheet?p=SMLP14ECNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN DIFFUSED 0402 SMD
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Color: Green
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 110mcd
Voltage - Forward (Vf) (Typ): 3V
Lens Color: White
Current - Test: 5mA
Height (Max): 0.25mm
Wavelength - Dominant: 527nm
Supplier Device Package: 0402
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.00mm x 0.60mm
на замовлення 4610 шт:
термін постачання 21-31 дні (днів)
4+94.18 грн
10+56.12 грн
100+38.61 грн
500+29.77 грн
1000+27.79 грн
2000+26.16 грн
Мінімальне замовлення: 4
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RRH100P03GZETB RRH100P03GZETB Rohm Semiconductor rrh100p03tb1-e.pdf Description: MOSFET P-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+47.86 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
RRH140P03GZETB RRH140P03GZETB Rohm Semiconductor rrh140p03tb1-e.pdf Description: MOSFET P-CH 30V 14A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V
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SDR10EZPF3R30 SDR10EZPF3R30 Rohm Semiconductor sdr-e.pdf Description: RES 3.3 OHM 1% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
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SDR10EZPF3R30 SDR10EZPF3R30 Rohm Semiconductor sdr-e.pdf Description: RES 3.3 OHM 1% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
14+23.34 грн
17+18.91 грн
50+9.98 грн
100+6.95 грн
500+4.20 грн
1000+2.91 грн
Мінімальне замовлення: 14
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SDR10EZPJ3R3 SDR10EZPJ3R3 Rohm Semiconductor sdr-e.pdf Description: RES 3.3 OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
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SDR10EZPJ3R3 SDR10EZPJ3R3 Rohm Semiconductor sdr-e.pdf Description: RES 3.3 OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
на замовлення 4600 шт:
термін постачання 21-31 дні (днів)
19+17.71 грн
22+14.65 грн
50+7.72 грн
100+5.37 грн
500+3.25 грн
1000+2.25 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
BA178M24CP-E2 BA178M24CP-E2 Rohm Semiconductor datasheet?p=BA178M24CP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 24V 500MA TO220-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 24V
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
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BA178M24CP-E2 BA178M24CP-E2 Rohm Semiconductor datasheet?p=BA178M24CP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 24V 500MA TO220-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 24V
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
3+111.89 грн
10+78.60 грн
25+71.34 грн
100+59.51 грн
250+55.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DTC124EMFHAT2L DTC124EMFHAT2L Rohm Semiconductor datasheet?p=DTC124EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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DTC124EMFHAT2L DTC124EMFHAT2L Rohm Semiconductor datasheet?p=DTC124EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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DTA115EMFHAT2L DTA115EMFHAT2L Rohm Semiconductor datasheet?p=DTA115EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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DTA115EMFHAT2L DTA115EMFHAT2L Rohm Semiconductor datasheet?p=DTA115EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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DTA124XMFHAT2L DTA124XMFHAT2L Rohm Semiconductor datasheet?p=DTA124XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIGITAL TRANSISTOR PNP 50V 100MA
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTA124XMFHAT2L DTA124XMFHAT2L Rohm Semiconductor datasheet?p=DTA124XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIGITAL TRANSISTOR PNP 50V 100MA
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTC114EMFHAT2L DTC114EMFHAT2L Rohm Semiconductor datasheet?p=DTC114EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN DIGITAL TRANSISTOR (100MA/50
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTC114EMFHAT2L DTC114EMFHAT2L Rohm Semiconductor datasheet?p=DTC114EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN DIGITAL TRANSISTOR (100MA/50
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTC144EMFHAT2L DTC144EMFHAT2L Rohm Semiconductor datasheet?p=DTC144EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTC144EMFHAT2L DTC144EMFHAT2L Rohm Semiconductor datasheet?p=DTC144EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTC123EMFHAT2L DTC123EMFHAT2L Rohm Semiconductor datasheet?p=DTC123EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTC123EMFHAT2L DTC123EMFHAT2L Rohm Semiconductor datasheet?p=DTC123EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTA124EMFHAT2L DTA124EMFHAT2L Rohm Semiconductor datasheet?p=DTA124EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
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DTA124EMFHAT2L DTA124EMFHAT2L Rohm Semiconductor datasheet?p=DTA124EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
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DTC114TMFHAT2L DTC114TMFHAT2L Rohm Semiconductor datasheet?p=DTC114TMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN DIGITAL TRANSISTOR (CORRESPO
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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DTC114TMFHAT2L DTC114TMFHAT2L Rohm Semiconductor datasheet?p=DTC114TMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN DIGITAL TRANSISTOR (CORRESPO
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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DTA114TMFHAT2L DTA114TMFHAT2L Rohm Semiconductor datasheet?p=DTA114TMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP DIGITAL TRANSISTOR (WITH BUI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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DTA114TMFHAT2L DTA114TMFHAT2L Rohm Semiconductor datasheet?p=DTA114TMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP DIGITAL TRANSISTOR (WITH BUI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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DTC144TMFHAT2L DTC144TMFHAT2L Rohm Semiconductor datasheet?p=DTC144TMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN DIGITAL TRANSISTOR (CORRESPO
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
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DTC144TMFHAT2L DTC144TMFHAT2L Rohm Semiconductor datasheet?p=DTC144TMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN DIGITAL TRANSISTOR (CORRESPO
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
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BD60223FP-E2 BD60223FP-E2 Rohm Semiconductor datasheet?p=BD60223FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 36V STEPPER MOTOR DRIVER : BD602
Packaging: Tape & Reel (TR)
Package / Case: 25-SOP (0.213", 5.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: On/Off
Operating Temperature: -25°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 8V ~ 28V
Applications: Printer
Technology: DMOS
Supplier Device Package: 25-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/16
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+137.51 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
BD60223FP-E2 BD60223FP-E2 Rohm Semiconductor datasheet?p=BD60223FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 36V STEPPER MOTOR DRIVER : BD602
Packaging: Cut Tape (CT)
Package / Case: 25-SOP (0.213", 5.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: On/Off
Operating Temperature: -25°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 8V ~ 28V
Applications: Printer
Technology: DMOS
Supplier Device Package: 25-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/16
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2+273.69 грн
10+236.96 грн
25+224.02 грн
100+182.20 грн
250+172.85 грн
500+155.10 грн
1000+128.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ESR10EZPF2263 ESR10EZPF2263 Rohm Semiconductor esr-e.pdf Description: RES 226K OHM 1% 2/5W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 226 kOhms
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MCR10EZHF2263 MCR10EZHF2263 Rohm Semiconductor MCR10%20%28new%29%20series.pdf Description: RES SMD 226K OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Discontinued at Digi-Key
Resistance: 226 kOhms
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KTR10EZPF2263 KTR10EZPF2263 Rohm Semiconductor ktr-e.pdf Description: RES SMD 226K OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 226 kOhms
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KTR10EZPF2263 KTR10EZPF2263 Rohm Semiconductor ktr-e.pdf Description: RES SMD 226K OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 226 kOhms
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LTR100JZPFLR360 LTR100JZPFLR360 Rohm Semiconductor ltr-low-e.pdf Description: RES SMD 0.36 OHM 1% 2W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 360 mOhms
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LTR100JZPFLR360 LTR100JZPFLR360 Rohm Semiconductor ltr-low-e.pdf Description: RES SMD 0.36 OHM 1% 2W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 360 mOhms
на замовлення 3900 шт:
термін постачання 21-31 дні (днів)
3+110.28 грн
10+62.79 грн
50+46.23 грн
100+38.54 грн
500+30.07 грн
1000+27.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LTR50UZPFLR360 LTR50UZPFLR360 Rohm Semiconductor ltr-low-e.pdf Description: HIGH POWER LOW OHMIC CHIP RESIST
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 360 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+27.78 грн
Мінімальне замовлення: 5000
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RQ3E160ADTB1 datasheet?p=RQ3E160AD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ3E160ADTB1
Виробник: Rohm Semiconductor
Description: NCH 30V 16A MIDDLE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+53.96 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RQ3E160ADTB1 datasheet?p=RQ3E160AD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ3E160ADTB1
Виробник: Rohm Semiconductor
Description: NCH 30V 16A MIDDLE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+127.18 грн
10+109.45 грн
100+85.36 грн
500+66.18 грн
1000+52.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RRQ020P03TCR datasheet?p=RRQ020P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRQ020P03TCR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
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RRQ020P03TCR datasheet?p=RRQ020P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRQ020P03TCR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.59 грн
13+24.96 грн
100+17.34 грн
500+12.70 грн
1000+10.33 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
ESR25JZPF4R70 esr-e.pdf
ESR25JZPF4R70
Виробник: Rohm Semiconductor
Description: RES SMD 4.7 OHM 1% 2/3W 1210
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 Ohms
на замовлення 3985 шт:
термін постачання 21-31 дні (днів)
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ESR25JZPF4R70 esr-e.pdf
ESR25JZPF4R70
Виробник: Rohm Semiconductor
Description: RES SMD 4.7 OHM 1% 2/3W 1210
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 Ohms
на замовлення 3985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.20 грн
14+23.80 грн
50+13.44 грн
100+9.38 грн
500+6.79 грн
1000+5.17 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ESR25JZPF1002 esr-e.pdf
ESR25JZPF1002
Виробник: Rohm Semiconductor
Description: RES 10K OHM 1% 1W 1210
Packaging: Tape & Reel (TR)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 10 kOhms
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ESR25JZPF1002 esr-e.pdf
ESR25JZPF1002
Виробник: Rohm Semiconductor
Description: RES 10K OHM 1% 1W 1210
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 10 kOhms
на замовлення 3487 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+36.22 грн
17+18.45 грн
50+12.65 грн
100+10.23 грн
500+7.51 грн
1000+6.65 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ESR25JZPF6R20 esr-e.pdf
ESR25JZPF6R20
Виробник: Rohm Semiconductor
Description: RES SMD 6.2 OHM 1% 2/3W 1210
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 6.2 Ohms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+6.60 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
ESR25JZPF6R20 esr-e.pdf
ESR25JZPF6R20
Виробник: Rohm Semiconductor
Description: RES SMD 6.2 OHM 1% 2/3W 1210
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 6.2 Ohms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.03 грн
17+19.07 грн
50+13.10 грн
100+10.59 грн
500+7.77 грн
1000+6.88 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
RSS095N05HZGTB rss095n05hzgtb-e.pdf
RSS095N05HZGTB
Виробник: Rohm Semiconductor
Description: NCH 45V 9.5A POWER MOSFET: RSS09
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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RSS095N05HZGTB rss095n05hzgtb-e.pdf
RSS095N05HZGTB
Виробник: Rohm Semiconductor
Description: NCH 45V 9.5A POWER MOSFET: RSS09
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+255.17 грн
10+160.14 грн
100+111.29 грн
500+84.86 грн
1000+78.57 грн
Мінімальне замовлення: 2
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KTR10EZPF1500 ktr-e.pdf
KTR10EZPF1500
Виробник: Rohm Semiconductor
Description: RES SMD 150 OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 Ohms
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KTR10EZPF1500 ktr-e.pdf
KTR10EZPF1500
Виробник: Rohm Semiconductor
Description: RES SMD 150 OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 Ohms
на замовлення 1086 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+12.88 грн
51+6.12 грн
76+4.11 грн
100+3.29 грн
500+2.36 грн
1000+2.08 грн
Мінімальне замовлення: 25
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ESR18EZPF2210 esr-e.pdf
ESR18EZPF2210
Виробник: Rohm Semiconductor
Description: RES 221 OHM 1% 3/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 221 Ohms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+1.90 грн
10000+1.66 грн
Мінімальне замовлення: 5000
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ESR18EZPF2210 esr-e.pdf
ESR18EZPF2210
Виробник: Rohm Semiconductor
Description: RES 221 OHM 1% 3/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 221 Ohms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.68 грн
48+6.59 грн
70+4.43 грн
100+3.55 грн
500+2.55 грн
1000+2.24 грн
Мінімальне замовлення: 24
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LTR50UZPFLR150 ltr-low-e.pdf
LTR50UZPFLR150
Виробник: Rohm Semiconductor
Description: HIGH POWER LOW OHMIC CHIP RESIST
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 150 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+27.78 грн
Мінімальне замовлення: 5000
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LTR50UZPFLR150 ltr-low-e.pdf
LTR50UZPFLR150
Виробник: Rohm Semiconductor
Description: HIGH POWER LOW OHMIC CHIP RESIST
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 150 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+76.47 грн
10+65.03 грн
50+54.55 грн
100+44.30 грн
500+31.50 грн
1000+26.19 грн
Мінімальне замовлення: 5
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DTC114EUBTL dtc114eebtl-e.pdf
DTC114EUBTL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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ML610Q174-447GAZWAAL ML610Q174_8-31-18.pdf
Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
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BD733L2FP-C-EVK
Виробник: Rohm Semiconductor
Description: LDO_EVK_BD7XXL2X BD733L2FP-C
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.37V ~ 45V
Current - Output: 200mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: BD733L2-C
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
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SMLP14ECNWT86 datasheet?p=SMLP14ECNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLP14ECNWT86
Виробник: Rohm Semiconductor
Description: LED GREEN DIFFUSED 0402 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Color: Green
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 110mcd
Voltage - Forward (Vf) (Typ): 3V
Lens Color: White
Current - Test: 5mA
Height (Max): 0.25mm
Wavelength - Dominant: 527nm
Supplier Device Package: 0402
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.00mm x 0.60mm
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SMLP14ECNWT86 datasheet?p=SMLP14ECNW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMLP14ECNWT86
Виробник: Rohm Semiconductor
Description: LED GREEN DIFFUSED 0402 SMD
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Color: Green
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 110mcd
Voltage - Forward (Vf) (Typ): 3V
Lens Color: White
Current - Test: 5mA
Height (Max): 0.25mm
Wavelength - Dominant: 527nm
Supplier Device Package: 0402
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.00mm x 0.60mm
на замовлення 4610 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+94.18 грн
10+56.12 грн
100+38.61 грн
500+29.77 грн
1000+27.79 грн
2000+26.16 грн
Мінімальне замовлення: 4
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RRH100P03GZETB rrh100p03tb1-e.pdf
RRH100P03GZETB
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+47.86 грн
Мінімальне замовлення: 2500
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RRH140P03GZETB rrh140p03tb1-e.pdf
RRH140P03GZETB
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 14A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V
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SDR10EZPF3R30 sdr-e.pdf
SDR10EZPF3R30
Виробник: Rohm Semiconductor
Description: RES 3.3 OHM 1% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
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SDR10EZPF3R30 sdr-e.pdf
SDR10EZPF3R30
Виробник: Rohm Semiconductor
Description: RES 3.3 OHM 1% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.34 грн
17+18.91 грн
50+9.98 грн
100+6.95 грн
500+4.20 грн
1000+2.91 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SDR10EZPJ3R3 sdr-e.pdf
SDR10EZPJ3R3
Виробник: Rohm Semiconductor
Description: RES 3.3 OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
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SDR10EZPJ3R3 sdr-e.pdf
SDR10EZPJ3R3
Виробник: Rohm Semiconductor
Description: RES 3.3 OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 3.3 Ohms
на замовлення 4600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+17.71 грн
22+14.65 грн
50+7.72 грн
100+5.37 грн
500+3.25 грн
1000+2.25 грн
Мінімальне замовлення: 19
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BA178M24CP-E2 datasheet?p=BA178M24CP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA178M24CP-E2
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 24V 500MA TO220-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 24V
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
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BA178M24CP-E2 datasheet?p=BA178M24CP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA178M24CP-E2
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 24V 500MA TO220-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 24V
Part Status: Active
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+111.89 грн
10+78.60 грн
25+71.34 грн
100+59.51 грн
250+55.95 грн
Мінімальне замовлення: 3
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DTC124EMFHAT2L datasheet?p=DTC124EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC124EMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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DTC124EMFHAT2L datasheet?p=DTC124EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC124EMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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DTA115EMFHAT2L datasheet?p=DTA115EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA115EMFHAT2L
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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DTA115EMFHAT2L datasheet?p=DTA115EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA115EMFHAT2L
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (CORRESPO
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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DTA124XMFHAT2L datasheet?p=DTA124XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XMFHAT2L
Виробник: Rohm Semiconductor
Description: DIGITAL TRANSISTOR PNP 50V 100MA
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTA124XMFHAT2L datasheet?p=DTA124XMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XMFHAT2L
Виробник: Rohm Semiconductor
Description: DIGITAL TRANSISTOR PNP 50V 100MA
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTC114EMFHAT2L datasheet?p=DTC114EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114EMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (100MA/50
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTC114EMFHAT2L datasheet?p=DTC114EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114EMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (100MA/50
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTC144EMFHAT2L datasheet?p=DTC144EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC144EMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTC144EMFHAT2L datasheet?p=DTC144EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC144EMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTC123EMFHAT2L datasheet?p=DTC123EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC123EMFHAT2L
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTC123EMFHAT2L datasheet?p=DTC123EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC123EMFHAT2L
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DTA124EMFHAT2L datasheet?p=DTA124EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124EMFHAT2L
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
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DTA124EMFHAT2L datasheet?p=DTA124EMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124EMFHAT2L
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
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DTC114TMFHAT2L datasheet?p=DTC114TMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114TMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (CORRESPO
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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DTC114TMFHAT2L datasheet?p=DTC114TMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114TMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (CORRESPO
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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DTA114TMFHAT2L datasheet?p=DTA114TMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA114TMFHAT2L
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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DTA114TMFHAT2L datasheet?p=DTA114TMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA114TMFHAT2L
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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DTC144TMFHAT2L datasheet?p=DTC144TMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC144TMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (CORRESPO
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
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DTC144TMFHAT2L datasheet?p=DTC144TMFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC144TMFHAT2L
Виробник: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (CORRESPO
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: VMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
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BD60223FP-E2 datasheet?p=BD60223FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD60223FP-E2
Виробник: Rohm Semiconductor
Description: 36V STEPPER MOTOR DRIVER : BD602
Packaging: Tape & Reel (TR)
Package / Case: 25-SOP (0.213", 5.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: On/Off
Operating Temperature: -25°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 8V ~ 28V
Applications: Printer
Technology: DMOS
Supplier Device Package: 25-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/16
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+137.51 грн
Мінімальне замовлення: 2000
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BD60223FP-E2 datasheet?p=BD60223FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD60223FP-E2
Виробник: Rohm Semiconductor
Description: 36V STEPPER MOTOR DRIVER : BD602
Packaging: Cut Tape (CT)
Package / Case: 25-SOP (0.213", 5.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: On/Off
Operating Temperature: -25°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 8V ~ 28V
Applications: Printer
Technology: DMOS
Supplier Device Package: 25-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4, 1/16
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+273.69 грн
10+236.96 грн
25+224.02 грн
100+182.20 грн
250+172.85 грн
500+155.10 грн
1000+128.66 грн
Мінімальне замовлення: 2
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ESR10EZPF2263 esr-e.pdf
ESR10EZPF2263
Виробник: Rohm Semiconductor
Description: RES 226K OHM 1% 2/5W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 226 kOhms
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MCR10EZHF2263 MCR10%20%28new%29%20series.pdf
MCR10EZHF2263
Виробник: Rohm Semiconductor
Description: RES SMD 226K OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Discontinued at Digi-Key
Resistance: 226 kOhms
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KTR10EZPF2263 ktr-e.pdf
KTR10EZPF2263
Виробник: Rohm Semiconductor
Description: RES SMD 226K OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 226 kOhms
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KTR10EZPF2263 ktr-e.pdf
KTR10EZPF2263
Виробник: Rohm Semiconductor
Description: RES SMD 226K OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 226 kOhms
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LTR100JZPFLR360 ltr-low-e.pdf
LTR100JZPFLR360
Виробник: Rohm Semiconductor
Description: RES SMD 0.36 OHM 1% 2W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 360 mOhms
товару немає в наявності
В кошику  од. на суму  грн.
LTR100JZPFLR360 ltr-low-e.pdf
LTR100JZPFLR360
Виробник: Rohm Semiconductor
Description: RES SMD 0.36 OHM 1% 2W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 360 mOhms
на замовлення 3900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+110.28 грн
10+62.79 грн
50+46.23 грн
100+38.54 грн
500+30.07 грн
1000+27.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LTR50UZPFLR360 ltr-low-e.pdf
LTR50UZPFLR360
Виробник: Rohm Semiconductor
Description: HIGH POWER LOW OHMIC CHIP RESIST
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 360 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+27.78 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
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