Виробник: Hitano
SMD резистори > 0805
Номінал: 210 kOhm
Точність: ±1% F
Pном,W: 0,125 W
Uроб,V: 150 V
Типорозмір: 0805

Виробник: Fairchild
Мікросхеми > Ключі інтелектуальні, мультиплексори аналогові
Корпус: SIP9 26x10.5
Функціональний опис: Power Switch for Half-Bridge resonant сonverters

Виробник: Omron Electronics
DIP Switches/SIP Switches 2 Pole Short Actuator (white)

Виробник: Omron Electronics Inc-EMC Div
Description: SWITCH PIANO DIP SPST 0.025A 24V
Packaging: Tube
Voltage Rating: 24VDC
Current Rating (Amps): 25mA
Mounting Type: Through Hole, Right Angle
Pitch: 0.100" (2.54mm), Full
Circuit: SPST
Operating Temperature: -20°C ~ 70°C
Termination Style: PC Pin
Actuator Type: Piano
Height Above Board: 0.402" (10.20mm)
Actuator Level: Flush, Recessed
Washable: No
Part Status: Active
Number of Positions: 2

Виробник: Omron Electronics
DIP Switches/SIP Switches 2 Pole Long Actuator (white)

Виробник: Omron Electronics Inc-EMC Div
Description: SWITCH PIANO DIP SPST 0.025A 24V
Packaging: Tube
Voltage Rating: 24VDC
Current Rating (Amps): 25mA
Mounting Type: Through Hole, Right Angle
Pitch: 0.100" (2.54mm), Full
Circuit: SPST
Operating Temperature: -20°C ~ 70°C
Termination Style: PC Pin
Actuator Type: Piano
Height Above Board: 0.402" (10.20mm)
Actuator Level: Raised
Washable: No
Part Status: Active
Number of Positions: 2

Виробник: OMRON Electronic Components
Category: Dip-Switches
Description: Switch: DIP-SWITCH; Poles number: 2; ON-OFF; 0.025A/24VDC; Pos: 2
Mounting: THT
Operating temperature: -20...70°C
Min. insulation resistance: 0.1GΩ
Type of switch: DIP-SWITCH
Body dimensions: 6.64x9.9x10.2mm
Switching method: ON-OFF
Stable positions number: 2
Overall length: 6.64mm
Switches features: "piano" long actuator
Row pitch: 7.62mm
Number of positions: 2
DC contacts rating @R: 0.025A / 24V DC
Electrical life: 1000 cycles
Terminal pitch: 2.54mm
Poles number: 2

Виробник: OMRON Electronic Components
Category: Dip-Switches
Description: Switch: DIP-SWITCH; Poles number: 2; ON-OFF; 0.025A/24VDC; Pos: 2
Mounting: THT
Operating temperature: -20...70°C
Min. insulation resistance: 0.1GΩ
Type of switch: DIP-SWITCH
Body dimensions: 6.64x9.9x10.2mm
Switching method: ON-OFF
Stable positions number: 2
Overall length: 6.64mm
Switches features: "piano" long actuator
Row pitch: 7.62mm
Number of positions: 2
DC contacts rating @R: 0.025A / 24V DC
Electrical life: 1000 cycles
Terminal pitch: 2.54mm
Poles number: 2
кількість в упаковці: 1 шт

Виробник: OMRON Electronic Components
Category: Dip-Switches
Description: Switch: DIP-SWITCH; Poles number: 2; ON-OFF; 0.025A/24VDC; Pos: 2
Mounting: THT
Operating temperature: -20...70°C
Min. insulation resistance: 0.1GΩ
Type of switch: DIP-SWITCH
Body dimensions: 6.64x9.9x10.2mm
Switching method: ON-OFF
Stable positions number: 2
Overall length: 6.64mm
Switches features: "piano" long actuator
Row pitch: 7.62mm
Number of positions: 2
DC contacts rating @R: 0.025A / 24V DC
Electrical life: 1000 cycles
Terminal pitch: 2.54mm
Poles number: 2

Виробник: OMRON Electronic Components
Category: Dip-Switches
Description: Switch: DIP-SWITCH; Poles number: 2; ON-OFF; 0.025A/24VDC; Pos: 2
Mounting: THT
Operating temperature: -20...70°C
Min. insulation resistance: 0.1GΩ
Type of switch: DIP-SWITCH
Body dimensions: 6.64x9.9x10.2mm
Switching method: ON-OFF
Stable positions number: 2
Overall length: 6.64mm
Switches features: "piano" long actuator
Row pitch: 7.62mm
Number of positions: 2
DC contacts rating @R: 0.025A / 24V DC
Electrical life: 1000 cycles
Terminal pitch: 2.54mm
Poles number: 2
кількість в упаковці: 1 шт

Виробник: Fairchild Semiconductor
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Bulk
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Active
Power (Watts): 400 W

Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 400 W

Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V

Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V

Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.7A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced

Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.7A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.7A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт

Виробник: Vishay Semiconductors
MOSFET N-Chan 200V 2.6 Amp

Виробник: Vishay
Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V

Виробник: Vishay / Siliconix
MOSFET 200V N-CH HEXFET D-PAK

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V

Виробник: Vishay Semiconductors
MOSFET N-Chan 200V 2.6 Amp

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V

Виробник: Vishay / Siliconix
MOSFET 200V N-CH HEXFET D-PAK

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V

Виробник: Vishay Semiconductors
MOSFET 200V Vds, 20V Vgs DPAK (TO-252)

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V

Виробник: Vishay / Siliconix
MOSFET N-CHANNEL 200V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V

Виробник: Texas Instruments
16-bit Microcontrollers - MCU 16 MHz MCU with 1KB FRAM, 0.5KB SRAM, comparator, 10-bit ADC, UART/SPI, timer 16-TSSOP -40 to 85

Виробник: Texas Instruments
Description: IC MCU 16BIT 1KB FRAM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 1KB (1K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FRAM
Core Processor: MSP430 CPU16
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: IrDA, SCI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-TSSOP
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified

Виробник: Texas Instruments
Description: IC MCU 16BIT 1KB FRAM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 1KB (1K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FRAM
Core Processor: MSP430 CPU16
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: IrDA, SCI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-TSSOP
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified

Виробник: Texas Instruments
Description: IC MCU 16BIT 1KB FRAM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 1KB (1K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FRAM
Core Processor: MSP430 CPU16
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: IrDA, SCI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-TSSOP
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified

Виробник: Texas Instruments
16-bit Microcontrollers - MCU 16 MHz MCU with 1KB FRAM, 0.5KB SRAM, comparator, 10-bit ADC, UART/SPI, timer 16-TSSOP -40 to 85

Виробник: Texas Instruments
16-bit Microcontrollers - MCU 16 MHz Ultra-LP Microcontroller

Виробник: Texas Instruments
Description: IC MCU 16BIT 1KB FRAM 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 1KB (1K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FRAM
Core Processor: MSP430 CPU16
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: IrDA, SCI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (3x3)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified

Виробник: Texas Instruments
Description: IC MCU 16BIT 1KB FRAM 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 1KB (1K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FRAM
Core Processor: MSP430 CPU16
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: IrDA, SCI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (3x3)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified

Виробник: IR
07+ TO-252

Виробник: IR
09+

Виробник: IR
TO-252

Виробник: FAIRCHILD
07+ TO-252

Виробник: FAIRCHILD
TO-252

Виробник: BUNGARD
Category: One-layer laminates
Description: Laminate; FR2,hard paper; 1.5mm; L: 160mm; W: 100mm
Type of board: laminate
Kind of board clad: copper; light-sensitive coating
Board variant: single sided
Width: 0.1m
Material: FR2; hard paper
Length: 160mm
Laminate thickness: 1.5mm
Copper plating thickness: 35µm

Виробник: BUNGARD
Category: One-layer laminates
Description: Laminate; FR2,hard paper; 1.5mm; L: 160mm; W: 100mm
Type of board: laminate
Kind of board clad: copper; light-sensitive coating
Board variant: double sided
Width: 0.1m
Material: FR2; hard paper
Length: 160mm
Laminate thickness: 1.5mm
Copper plating thickness: 35µm

Виробник: BUNGARD
Category: One-layer laminates
Description: Laminate; FR2,hard paper; 1.5mm; L: 160mm; W: 100mm
Type of board: laminate
Kind of board clad: copper; light-sensitive coating
Board variant: double sided
Width: 0.1m
Material: FR2; hard paper
Length: 160mm
Laminate thickness: 1.5mm
Copper plating thickness: 35µm
кількість в упаковці: 1 шт

Мікросхеми > Інші мікросхеми
8542 39 90 00

Різні комплектуючі > Різні комплектуючі 2

Виробник: Dremel
Description: CARDED FREARSON F2, 1" INSERT BI
Packaging: Bulk

Виробник: Siemens
Description: SIMATIC IPC627D (BOX PC)
Packaging: Box
Display Type: No Display
Mounting Type: Panel Mount
Type: Box PC
Operating Temperature: -5°C ~ 55°C
Voltage - Supply: 100 ~ 240VAC, 24VDC
Core Processor: Intel® Core™ i3-4330TE 2.4GHz, 2 Core
Approval Agency: CE, cULus, FCC, KC, RCM, UL
Ingress Protection: IP20
Expansion Type: PCI, PCIe
Operating System: Supports Windows 7/10
Part Status: Active
Storage: Supports SATA
Memory: DDR3 SODIMM (16GB Installed)

Виробник: Omron
Switch DIP OFF ON SPST 2 Short Piano 0.025A 24VDC PC Pins 1000Cycles 2.54mm Thru-Hole Tube

Виробник: Omron
Switch DIP OFF ON SPST 2 Long Piano 0.025A 24VDC PC Pins 1000Cycles 2.54mm Thru-Hole Tube

Виробник: onsemi
Description: EVAL BOARD FOR FSFR2100
Packaging: Box
Voltage - Output: 24V
Voltage - Input: 340V ~ 400V
Current - Output: 8A
Regulator Topology: Resonant
Board Type: Fully Populated
Utilized IC / Part: FSFR2100
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 192 W