Виробник: IR
Транзистори > Польові N-канальні
Корпус: TO-220
Напруга сток-витік Uds, В: 200 В
Струм стоку Idd, А: 9,3 А
Опір відкритого каналу Rds(on), Ом: 0,3 Ом
Вхідна ємність Ciss, пФ / заряд затвора Qg, nC: 575/35
Монтаж: THT

Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MESH OVERLAY™ II; unipolar; 200V; 5.7A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 75W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Technology: MESH OVERLAY™ II
Kind of package: tube

Виробник: ST MICROELECTRONICS
N-Channel, 200V, 9.0A, 75W, Rds=0.40R, TO-220

Виробник: STMicroelectronics
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB Tube

Виробник: HARRIS
IRF630

Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - IRF630 - Leistungs-MOSFET, n-Kanal, 200 V, 9 A, 0.4 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 100W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.4ohm

Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V

Виробник: HARRIS
IRF630

Виробник: STMicroelectronics
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB Tube

Виробник: STMicroelectronics
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB Tube

Виробник: STMicroelectronics
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB Tube

Виробник: HARRIS
IRF630

Виробник: STMicroelectronics
MOSFETs N-Ch 200 Volt 10 Amp

Виробник: Siliconix
N-MOSFET 9A 200V 74W 0.4Ω IRF630 (9A), IRF630NPBR (9.3A) IRF630 TIRF630
кількість в упаковці: 50 шт

Виробник: JSMicro Semiconductor
Transistor N-Channel MOSFET; 200V; 30V; 400mOhm; 9A; 72W; -55°C ~ 150°C; Equivalent: IRF630; IRF630-BE3; IRF630N; SP001564792; IRF630 JSMICRO TIRF630 JSM
кількість в упаковці: 25 шт

Виробник: FAIRCHILD
IRF630A_CP001

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 200V
Packaging: Bulk
Part Status: Active

Виробник: FAIRCHILD
IRF630A_CP001

Виробник: International Rectifier
N-MOSFET 9.3A 200V 82W IRF630N IRF630N TO220 TIRF630n
кількість в упаковці: 25 шт

Виробник: MOSLEADER
Transistor N-Channel MOSFET; 200V; 20V; 300mOhm; 9A; 74W; -55°C ~ 150°C; Equivalent: IRF630; IRF630-BE3; IRF630N; SP001564792; IRF630N-ML MOSLEADER TIRF630 MOS
кількість в упаковці: 25 шт

Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 23.3nC
Technology: HEXFET®
Kind of package: tube

Виробник: Infineon Technologies
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube

Виробник: Infineon Technologies
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube

Виробник: Infineon Technologies
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube

Виробник: Infineon Technologies
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube

Виробник: Infineon Technologies
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube

Виробник: Infineon Technologies
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube

Виробник: Infineon Technologies
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube

Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 9.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V

Виробник: Infineon Technologies
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube

Виробник: Infineon Technologies
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube

Виробник: Infineon Technologies
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube

Виробник: Infineon Technologies
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube

Виробник: Infineon Technologies
MOSFETs MOSFT 200V 9.5A 300mOhm 23.3nC

Виробник: Infineon Technologies
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube

Виробник: INFINEON
Description: INFINEON - IRF630NPBF - Leistungs-MOSFET, n-Kanal, 200 V, 9.3 A, 0.3 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 9.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 82W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.3ohm

Виробник: International Rectifier
N-MOSFET 9.3A 200V 82W 0.3Ω Replacement: IRF630NS IRF630NS smd TIRF630ns
кількість в упаковці: 10 шт

Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: tube

Виробник: Vishay
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB

Виробник: Vishay
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB

Виробник: Vishay
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB

Виробник: Vishay
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB

Виробник: Vishay
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB

Виробник: VISHAY
Description: VISHAY - IRF630PBF - Leistungs-MOSFET, n-Kanal, 200 V, 9 A, 0.4 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 74W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.4ohm

Виробник: Vishay
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB

Виробник: Vishay
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB

Виробник: Vishay Semiconductors
MOSFETs TO220 200V 9A N-CH MOSFET

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V

Виробник: Vishay / Siliconix
MOSFETs TO220 200V 9A N-CH MOSFET

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V

Виробник: International Rectifier
Transistor N-Channel MOSFET; 200V; 20V; 400mOhm; 9A; 74W; -55°C ~ 150°C; IRF630S TIRF630s
кількість в упаковці: 10 шт

Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: tube

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V

Виробник: Vishay Semiconductors
MOSFETs TO263 200V 9A N-CH MOSFET

Виробник: Vishay
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V

Виробник: Vishay Semiconductors
MOSFETs N-Chan 200V 9.0 Amp

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V

Виробник: Vishay Semiconductors
MOSFETs N-Chan 200V 9.0 Amp

Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V