Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170230) > Сторінка 2838 з 2838
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MJD117T4 | STMicroelectronics |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 20W Case: DPAK Mounting: SMD Frequency: 25MHz Current gain: 200...12000 |
на замовлення 6815 шт: термін постачання 21-30 дні (днів) |
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DB4 | STMicroelectronics |
![]() Description: Diac; 2A; DO35; 35÷45V; THT; Ammo Pack Type of thyristor: diac Max. load current: 2A Case: DO35 Breakover voltage: 35...45V Mounting: THT Kind of package: Ammo Pack |
на замовлення 817 шт: термін постачання 21-30 дні (днів) |
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STP50NF25 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™; unipolar; 250V; 28A; Idm: 180A Type of transistor: N-MOSFET Technology: STripFET™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 28A Pulsed drain current: 180A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: THT Gate charge: 68.2nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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1.5KE56CA | STMicroelectronics |
![]() ![]() Description: Diode: TVS; 56V; 19.5A; bidirectional; CB429; 1.5kW Type of diode: TVS Max. off-state voltage: 47.8V Breakdown voltage: 56V Max. forward impulse current: 19.5A Semiconductor structure: bidirectional Case: CB429 Mounting: THT Leakage current: 1mA Peak pulse power dissipation: 1.5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
STGB40H65FB | STMicroelectronics |
![]() Description: Transistor: IGBT; 650V; 40A; 283W; D2PAK Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Type of transistor: IGBT Power dissipation: 283W Kind of package: reel; tape Gate charge: 0.21µC Mounting: SMD Case: D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STS4DNF60L | STMicroelectronics |
![]() Description: Transistor: N-MOSFET x2; STripFET™ II; unipolar; 60V; 3A; 2.5W; SO8 Drain-source voltage: 60V Drain current: 3A On-state resistance: 65mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Technology: STripFET™ II Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SO8 |
на замовлення 423 шт: термін постачання 21-30 дні (днів) |
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STS10P4LLF6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.7W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 5.6A Pulsed drain current: 40A Power dissipation: 2.7W Case: SO8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMAJ85CA-TR | STMicroelectronics |
![]() Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 85V Breakdown voltage: 99V Max. forward impulse current: 13A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 4300 шт: термін постачання 21-30 дні (днів) |
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L6902D013TR | STMicroelectronics |
![]() Description: Driver; DC/DC converter; Uin: 8÷36VDC; Uout: 1.23÷34VDC; 1A; SO8 Type of integrated circuit: driver Output voltage: 1.23...34V DC Output current: 1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Input voltage: 8...36V DC Frequency: 250kHz Kind of integrated circuit: DC/DC converter Topology: buck |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
STWA75N65DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Pulsed drain current: 280A Power dissipation: 480W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 36mΩ Mounting: THT Gate charge: 118nC Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. |
MJD117T4 |
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Виробник: STMicroelectronics
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Frequency: 25MHz
Current gain: 200...12000
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Frequency: 25MHz
Current gain: 200...12000
на замовлення 6815 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
10+ | 40.82 грн |
49+ | 18.35 грн |
134+ | 17.35 грн |
DB4 |
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Виробник: STMicroelectronics
Category: Diacs
Description: Diac; 2A; DO35; 35÷45V; THT; Ammo Pack
Type of thyristor: diac
Max. load current: 2A
Case: DO35
Breakover voltage: 35...45V
Mounting: THT
Kind of package: Ammo Pack
Category: Diacs
Description: Diac; 2A; DO35; 35÷45V; THT; Ammo Pack
Type of thyristor: diac
Max. load current: 2A
Case: DO35
Breakover voltage: 35...45V
Mounting: THT
Kind of package: Ammo Pack
на замовлення 817 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.11 грн |
37+ | 10.47 грн |
100+ | 6.66 грн |
250+ | 5.53 грн |
296+ | 3.02 грн |
812+ | 2.86 грн |
STP50NF25 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 250V; 28A; Idm: 180A
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 28A
Pulsed drain current: 180A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 68.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 250V; 28A; Idm: 180A
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 28A
Pulsed drain current: 180A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 68.2nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
1.5KE56CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 56V; 19.5A; bidirectional; CB429; 1.5kW
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 19.5A
Semiconductor structure: bidirectional
Case: CB429
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 56V; 19.5A; bidirectional; CB429; 1.5kW
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 19.5A
Semiconductor structure: bidirectional
Case: CB429
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
товару немає в наявності
В кошику
од. на суму грн.
STGB40H65FB |
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Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; D2PAK
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Type of transistor: IGBT
Power dissipation: 283W
Kind of package: reel; tape
Gate charge: 0.21µC
Mounting: SMD
Case: D2PAK
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; D2PAK
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Type of transistor: IGBT
Power dissipation: 283W
Kind of package: reel; tape
Gate charge: 0.21µC
Mounting: SMD
Case: D2PAK
товару немає в наявності
В кошику
од. на суму грн.
STS4DNF60L |
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Виробник: STMicroelectronics
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; STripFET™ II; unipolar; 60V; 3A; 2.5W; SO8
Drain-source voltage: 60V
Drain current: 3A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Technology: STripFET™ II
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; STripFET™ II; unipolar; 60V; 3A; 2.5W; SO8
Drain-source voltage: 60V
Drain current: 3A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Technology: STripFET™ II
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
на замовлення 423 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 158.90 грн |
5+ | 119.11 грн |
10+ | 107.49 грн |
29+ | 31.50 грн |
78+ | 29.82 грн |
STS10P4LLF6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.7W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.6A
Pulsed drain current: 40A
Power dissipation: 2.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.7W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.6A
Pulsed drain current: 40A
Power dissipation: 2.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SMAJ85CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 4300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.52 грн |
21+ | 18.50 грн |
100+ | 13.00 грн |
185+ | 4.82 грн |
508+ | 4.59 грн |
L6902D013TR |
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Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 8÷36VDC; Uout: 1.23÷34VDC; 1A; SO8
Type of integrated circuit: driver
Output voltage: 1.23...34V DC
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 8...36V DC
Frequency: 250kHz
Kind of integrated circuit: DC/DC converter
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 8÷36VDC; Uout: 1.23÷34VDC; 1A; SO8
Type of integrated circuit: driver
Output voltage: 1.23...34V DC
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 8...36V DC
Frequency: 250kHz
Kind of integrated circuit: DC/DC converter
Topology: buck
товару немає в наявності
В кошику
од. на суму грн.
STWA75N65DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.