Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170298) > Сторінка 2835 з 2839
Фото | Назва | Виробник | Інформація |
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STN1HNK60 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.4A; 3.3W; SOT223; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.4A Power dissipation: 3.3W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 8.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 8683 шт: термін постачання 21-30 дні (днів) |
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STGIPN3H60 | STMicroelectronics |
![]() Description: IC: driver; IGBT three-phase bridge; SLLIMM nano; NDIP-26L; 3A Type of integrated circuit: driver Topology: IGBT three-phase bridge Kind of integrated circuit: 3-phase motor controller; IPM Technology: SLLIMM nano Case: NDIP-26L Output current: 3A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 12...17/0...500V DC Frequency: 25kHz Power dissipation: 9.7W Collector-emitter voltage: 600V |
на замовлення 56 шт: термін постачання 21-30 дні (днів) |
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VNH7040AYTR | STMicroelectronics |
![]() Description: IC: driver; H-bridge; brush motor controller; PowerSSO36; 35A Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brush motor controller Case: PowerSSO36 Output current: 35A Number of channels: 2 Mounting: SMD On-state resistance: 40mΩ Operating temperature: -40...150°C Application: automotive industry Frequency: 20kHz Kind of package: reel; tape Supply voltage: 4...28V |
на замовлення 920 шт: термін постачання 21-30 дні (днів) |
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STD3NK90ZT4 | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 900V; 3A; 12W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 12W Case: DPAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: 900V Drain current: 3A On-state resistance: 4.8Ω Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V |
на замовлення 6556 шт: термін постачання 21-30 дні (днів) |
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STD2NK90ZT4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; DPAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 70W Case: DPAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: 900V Drain current: 1.3A On-state resistance: 6.5Ω Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±30V |
на замовлення 83 шт: термін постачання 21-30 дні (днів) |
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STL86N3LLH6AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 60W; Automotive Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 320A Power dissipation: 60W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Version: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STPS1L60AFN | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; SMA flat; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA flat Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. load current: 10A Leakage current: 21mA Max. forward impulse current: 60A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMCJ5.0CA-TR | STMicroelectronics |
![]() ![]() Description: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.74V Max. forward impulse current: 171A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 2mA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STTH1602CT | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 80A; TO220AB; 21ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 80A Case: TO220AB Max. forward voltage: 0.78V Reverse recovery time: 21ns Heatsink thickness: 1.23...1.32mm |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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STTH16L06CFP | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; TO220FPAB Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: TO220FPAB Max. forward voltage: 1.05V Reverse recovery time: 35ns |
на замовлення 151 шт: термін постачання 21-30 дні (днів) |
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STTH1602CFP | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 80A; TO220FPAB; 21ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 80A Case: TO220FPAB Max. forward voltage: 0.78V Reverse recovery time: 21ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
STTH16L06CTY | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 8Ax2; tube; Ifsm: 120A; TO220AB; Ir: 8uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: TO220AB Max. forward voltage: 2.08V Reverse recovery time: 35ns Application: automotive industry Max. load current: 30A Leakage current: 8µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STTH16L06CT | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; TO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: TO220AB Max. forward voltage: 2.08V Reverse recovery time: 35ns Max. load current: 30A Leakage current: 8µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STTH16R04CT | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 120A; TO220AB; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: TO220AB Max. forward voltage: 0.9V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 25ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
STTH16R04CG-TR | STMicroelectronics |
![]() Description: Diode: rectifying Type of diode: rectifying |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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L6506 | STMicroelectronics |
![]() Description: IC: driver; PWM controller; DIP18; Ch: 4; 4.5÷7V Type of integrated circuit: driver Kind of integrated circuit: PWM controller Case: DIP18 Number of channels: 4 Mounting: THT Operating temperature: -40...150°C Supply voltage: 4.5...7V Application: motors DC supply current: 25mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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L6506D013TR | STMicroelectronics |
![]() Description: IC: driver; motor controller; SO20; Ch: 4; 70kHz; 10V; 25mA Type of integrated circuit: driver Kind of integrated circuit: motor controller Case: SO20 Number of channels: 4 Mounting: SMD On-state resistance: 1.3Ω Operating temperature: 0...125°C Frequency: 70kHz Kind of package: reel; tape Supply voltage: 10V Operating current: 25mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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T1610H-6T | STMicroelectronics |
![]() Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 126A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 10mA Max. forward impulse current: 126A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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T1610T-8T | STMicroelectronics |
![]() Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 126A; logic level Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 10mA Max. forward impulse current: 126A Features of semiconductor devices: logic level Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
T1610T-8G | STMicroelectronics |
![]() Description: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 126A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Gate current: 10mA Max. forward impulse current: 126A Mounting: SMD Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
T1610-800G-TR | STMicroelectronics |
![]() Description: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 160A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Gate current: 10mA Max. forward impulse current: 160A Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
T1610-600G-TR | STMicroelectronics |
![]() Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 160A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Gate current: 10mA Max. forward impulse current: 160A Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
T1610T-8I | STMicroelectronics |
![]() Description: Triac; 800V; 16A; TO220ABIns; Igt: 10mA; Ifsm: 126A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220ABIns Gate current: 10mA Max. forward impulse current: 126A Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM32L062K8T6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0 Type of integrated circuit: STM32 ARM microcontroller Operating temperature: -40...85°C Case: LQFP32 Supply voltage: 1.8...3.6V DC Interface: I2C; SPI x4; USART x2; USB Clock frequency: 32MHz Number of inputs/outputs: 25 Number of 16bit timers: 5 Number of 12bit A/D converters: 10 Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog Kind of package: in-tray Kind of architecture: Cortex M0+ Family: STM32L0 Number of 12bit D/A converters: 1 Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM32L062K8U6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Operating temperature: -40...85°C Case: UFQFPN32 Supply voltage: 1.8...3.6V DC Interface: I2C; SPI x4; USART x2; USB Clock frequency: 32MHz Number of inputs/outputs: 27 Number of 16bit timers: 5 Number of 12bit A/D converters: 10 Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog Kind of package: in-tray Kind of architecture: Cortex M0+ Family: STM32L0 Number of 12bit D/A converters: 1 Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STEVAL-ILL062V1 | STMicroelectronics |
![]() Description: Dev.kit: evaluation; base board; Comp: L7981D,STP16CPC26; 6÷24VDC Operating voltage: 6...24V DC Kit contents: base board Interface: SPI Number of channels: 16 Number of diodes: 32 Additional functions: DC/DC converter Type of development kit: evaluation Kind of integrated circuit: LED driver Components: L7981D; STP16CPC26 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
LD29150DT18R | STMicroelectronics |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 1.8V Output current: 1.5A Case: DPAK Mounting: SMD Manufacturer series: LD29150 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STL47N60M6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 124A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 124A Power dissipation: 190W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 82mΩ Mounting: SMD Gate charge: 52.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STF40NF20 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 40W; TO220FP Gate-source voltage: ±20V Mounting: THT Case: TO220FP Drain-source voltage: 200V Drain current: 25A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of package: tube Technology: STripFET™ Kind of channel: enhancement |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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STGW30NC120HD | STMicroelectronics |
![]() Description: Transistor: IGBT; 1.2kV; 30A; 220W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 220W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 135A Mounting: THT Gate charge: 110nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
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STEVAL-ILL049V12 | STMicroelectronics |
![]() Description: Dev.kit: evaluation; base board,expansion board; 6÷24VDC; Ch: 1 Kind of integrated circuit: LED driver Number of channels: 1 Operating current: 0.35A Interface: PWM Number of diodes: 10 Type of development kit: evaluation Kind of connector: pin header Components: LED6001; NCP18WB473J03RB Operating voltage: 6...24V DC Kit contents: base board; expansion board |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STEVAL-ILL079V1 | STMicroelectronics |
![]() Description: Dev.kit: evaluation; expansion board; Comp: LED6000; 15÷30VDC Kind of integrated circuit: LED driver Operating current: 0.5A Type of development kit: evaluation Kind of connector: measuring terminal; pin strips Topology: buck-boost Components: LED6000 Operating voltage: 15...30V DC Kit contents: expansion board |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TDA7293HS | STMicroelectronics |
![]() Description: IC: audio amplifier; Pout: 100W; 12÷50VDC; Ch: 1; Amp.class: AB; 4Ω Type of integrated circuit: audio amplifier Output power: 100W Mounting: THT Supply voltage: 12...50V DC Number of channels: 1 Amplifier class: AB Case: MULTIWATT15 Impedance: 4Ω Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMCJ26A-TR | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 30.4V; 37A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 26V Breakdown voltage: 30.4V Max. forward impulse current: 37A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2180 шт: термін постачання 21-30 дні (днів) |
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STM32F205VGT6V | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 120MHz; LQFP100; 1.8÷3.6VDC Supply voltage: 1.8...3.6V DC Operating temperature: -40...85°C Type of integrated circuit: STM32 ARM microcontroller Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB Clock frequency: 120MHz Number of inputs/outputs: 82 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG Kind of architecture: Cortex M3 Family: STM32F2 Memory: 128kB RAM; 1MB FLASH Mounting: SMD Case: LQFP100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TSV611AILT | STMicroelectronics |
![]() Description: IC: operational amplifier; 120kHz; Ch: 1; SOT23-5; 1.5÷5.5VDC Type of integrated circuit: operational amplifier Bandwidth: 120kHz Mounting: SMT Number of channels: 1 Case: SOT23-5 Slew rate: 40mV/μs Quiescent current: 15µA Operating temperature: -40...85°C Input offset voltage: 2mV Voltage supply range: 1.5...5.5V DC Integrated circuit features: rail-to-rail; universal Kind of package: reel; tape Input bias current: 0.1nA Input offset current: 0.1nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
STL25N60M2-EP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 64A; 125W Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 29nC Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: 64A Mounting: SMD Case: PowerFLAT 8x8 Drain-source voltage: 600V Drain current: 16A On-state resistance: 0.205Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ST1480ACDR | STMicroelectronics |
![]() Description: IC: interface; transceiver; RS422,RS485; 12Mbps; SO8; 3.3VDC Interface: RS422; RS485 Supply voltage: 3.3V DC Operating temperature: 0...70°C Type of integrated circuit: interface Data transfer rate: 12Mbps Kind of package: reel; tape Case: SO8 Kind of integrated circuit: transceiver Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAT54WFILMY | STMicroelectronics |
![]() Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 0.9V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
STEVAL-IPM08B | STMicroelectronics |
![]() Description: Dev.kit: evaluation; expansion board; Comp: STGIB8CH60TS-L; 4.8A Power: 800W Operating voltage: 125...400V AC Kit contents: expansion board Output current: 4.8A Interface: GPIO Application: motors Additional functions: speed sensor; temperature sensor Protection: anti-overload OPP; overheating OTP Type of development kit: evaluation Components: STGIB8CH60TS-L Number of add-on connectors: 1 Kind of connector: Motor Control Expansion Connector; screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STEVAL-ISA082V1 | STMicroelectronics |
![]() Description: Dev.kit: evaluation; prototype board; Comp: ST1S40IPHR; 800kHz Type of development kit: evaluation Kit contents: prototype board Components: ST1S40IPHR Kind of connector: pin header Application: power supply Frequency: 800kHz Operating voltage: 4...18V DC Output voltage: 3.3V Output current: 3A Protection: short circuit protection SCP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STL9P3LLH6 | STMicroelectronics |
![]() Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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STL30P3LLH6 | STMicroelectronics |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -36A; 4.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -30A Pulsed drain current: -36A Power dissipation: 4.8W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
STM32F303RET7TR | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller Type of integrated circuit: STM32 ARM microcontroller |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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STTH1R02A | STMicroelectronics |
![]() ![]() Description: Diode: rectifying; SMD; 200V; 1.5A; 15ns; SMA; Ufmax: 0.7V; Ifsm: 60A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1.5A Reverse recovery time: 15ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 0.7V Max. forward impulse current: 60A Kind of package: reel; tape |
на замовлення 3024 шт: термін постачання 21-30 дні (днів) |
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TS924AIYPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 4; TSSOP14; 2.7÷12VDC Operating temperature: -40...125°C Type of integrated circuit: operational amplifier Number of channels: 4 Bandwidth: 4MHz Input offset voltage: 1.8mV Application: automotive industry Integrated circuit features: rail-to-rail; universal Kind of package: reel; tape Slew rate: 1.3V/μs Input offset current: 30nA Input bias current: 0.1µA Voltage supply range: 2.7...12V DC Mounting: SMT Case: TSSOP14 |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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ESDAXLC18-1BF4 | STMicroelectronics |
![]() Description: Diode: TVS; 50W; 2.2A; bidirectional; 0201; ESD Type of diode: TVS Version: ESD Peak pulse power dissipation: 50W Mounting: SMD Case: 0201 Capacitance: 0.6pF Semiconductor structure: bidirectional Max. forward impulse current: 2.2A Leakage current: 30nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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T2035H-6I | STMicroelectronics |
![]() Description: Triac; 600V; 20A; TO220ABIns; Igt: 35mA; Snubberless™ Case: TO220ABIns Max. off-state voltage: 0.6kV Max. load current: 20A Gate current: 35mA Kind of package: tube Features of semiconductor devices: high temperature Technology: Snubberless™ Type of thyristor: triac Mounting: THT |
на замовлення 103 шт: термін постачання 21-30 дні (днів) |
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T2035H-6T | STMicroelectronics |
![]() Description: Triac; 600V; 20A; TO220AB; Igt: 35mA; Snubberless™ Case: TO220AB Max. off-state voltage: 0.6kV Max. load current: 20A Gate current: 35mA Kind of package: tube Features of semiconductor devices: high temperature Technology: Snubberless™ Type of thyristor: triac Mounting: THT |
на замовлення 104 шт: термін постачання 21-30 дні (днів) |
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STL320N4LF8 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 360A; Idm: 1440A; 188W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 360A Pulsed drain current: 1.44kA Power dissipation: 188W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 0.8mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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STPS3150UF | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 150V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 150V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.63V Max. forward impulse current: 80A Kind of package: reel; tape |
на замовлення 5964 шт: термін постачання 21-30 дні (днів) |
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STPS3150RL | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V Type of diode: Schottky rectifying Case: DO201AD Mounting: THT Max. off-state voltage: 150V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.82V Max. forward impulse current: 100A Kind of package: reel |
на замовлення 1588 шт: термін постачання 21-30 дні (днів) |
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STPS3150UY | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 150V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 150V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.82V Max. forward impulse current: 80A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TS914ID | STMicroelectronics |
![]() Description: IC: operational amplifier; 800kHz; Ch: 4; SO14; 2.7÷16VDC; IB: 300pA Type of integrated circuit: operational amplifier Bandwidth: 800kHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 0.5V/μs Quiescent current: 400µA Operating temperature: -40...125°C Input offset voltage: 12mV Voltage supply range: 2.7...16V DC Input bias current: 0.3nA Input offset current: 0.2nA |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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D44H8 | STMicroelectronics |
![]() Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 50W Case: TO220 Mounting: THT Kind of package: tube |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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STM32F051R8T7 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; -40÷105°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 48MHz Mounting: SMD Number of inputs/outputs: 55 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: GPIO; HDMI CEC; I2C; IrDA; LIN; SPI; SWD; USART Kind of architecture: Cortex M0 Integrated circuit features: DMA; PdR; PoR; PVD; watchdog Memory: 8kB SRAM; 64kB FLASH Operating temperature: -40...105°C Number of comparators: 2 Family: STM32F0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
M24C04-DRMN8TP/K | STMicroelectronics |
![]() Description: IC: EEPROM memory Type of integrated circuit: EEPROM memory |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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SM6T15CAY | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 2283 шт: термін постачання 21-30 дні (днів) |
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STM1817SWX7F | STMicroelectronics |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: high Supply voltage: 1.2...5.5V DC Case: SOT23-3 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 2.88V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMBJ13A-TR | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 15.2V; 29A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 15.2V Max. forward impulse current: 29A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2191 шт: термін постачання 21-30 дні (днів) |
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STN1HNK60 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.4A; 3.3W; SOT223; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.4A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.4A; 3.3W; SOT223; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.4A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 8683 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 99.03 грн |
10+ | 60.62 грн |
50+ | 50.12 грн |
69+ | 13.10 грн |
190+ | 12.34 грн |
STGIPN3H60 |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; SLLIMM nano; NDIP-26L; 3A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: SLLIMM nano
Case: NDIP-26L
Output current: 3A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 12...17/0...500V DC
Frequency: 25kHz
Power dissipation: 9.7W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; SLLIMM nano; NDIP-26L; 3A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: SLLIMM nano
Case: NDIP-26L
Output current: 3A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 12...17/0...500V DC
Frequency: 25kHz
Power dissipation: 9.7W
Collector-emitter voltage: 600V
на замовлення 56 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 846.74 грн |
2+ | 586.25 грн |
5+ | 554.06 грн |
17+ | 532.60 грн |
VNH7040AYTR |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PowerSSO36; 35A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Case: PowerSSO36
Output current: 35A
Number of channels: 2
Mounting: SMD
On-state resistance: 40mΩ
Operating temperature: -40...150°C
Application: automotive industry
Frequency: 20kHz
Kind of package: reel; tape
Supply voltage: 4...28V
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PowerSSO36; 35A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Case: PowerSSO36
Output current: 35A
Number of channels: 2
Mounting: SMD
On-state resistance: 40mΩ
Operating temperature: -40...150°C
Application: automotive industry
Frequency: 20kHz
Kind of package: reel; tape
Supply voltage: 4...28V
на замовлення 920 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 481.14 грн |
3+ | 344.85 грн |
8+ | 325.69 грн |
100+ | 324.16 грн |
250+ | 313.43 грн |
STD3NK90ZT4 | ![]() |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3A; 12W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 12W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 900V
Drain current: 3A
On-state resistance: 4.8Ω
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3A; 12W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 12W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 900V
Drain current: 3A
On-state resistance: 4.8Ω
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
на замовлення 6556 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 172.48 грн |
10+ | 104.99 грн |
30+ | 31.42 грн |
81+ | 29.12 грн |
STD2NK90ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 70W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 900V
Drain current: 1.3A
On-state resistance: 6.5Ω
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 70W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 900V
Drain current: 1.3A
On-state resistance: 6.5Ω
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
на замовлення 83 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 136.17 грн |
10+ | 87.52 грн |
26+ | 35.25 грн |
71+ | 33.34 грн |
STL86N3LLH6AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 60W; Automotive
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 60W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: Automotive
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 60W; Automotive
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 60W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: Automotive
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STPS1L60AFN |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. load current: 10A
Leakage current: 21mA
Max. forward impulse current: 60A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. load current: 10A
Leakage current: 21mA
Max. forward impulse current: 60A
Kind of package: reel; tape
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SMCJ5.0CA-TR | ![]() |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
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од. на суму грн.
STTH1602CT |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 80A; TO220AB; 21ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220AB
Max. forward voltage: 0.78V
Reverse recovery time: 21ns
Heatsink thickness: 1.23...1.32mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 80A; TO220AB; 21ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220AB
Max. forward voltage: 0.78V
Reverse recovery time: 21ns
Heatsink thickness: 1.23...1.32mm
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 76.63 грн |
STTH16L06CFP |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; TO220FPAB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220FPAB
Max. forward voltage: 1.05V
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; TO220FPAB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220FPAB
Max. forward voltage: 1.05V
Reverse recovery time: 35ns
на замовлення 151 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 111.88 грн |
10+ | 98.09 грн |
11+ | 85.06 грн |
30+ | 80.47 грн |
STTH1602CFP |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 80A; TO220FPAB; 21ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220FPAB
Max. forward voltage: 0.78V
Reverse recovery time: 21ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 80A; TO220FPAB; 21ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220FPAB
Max. forward voltage: 0.78V
Reverse recovery time: 21ns
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STTH16L06CTY |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; tube; Ifsm: 120A; TO220AB; Ir: 8uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AB
Max. forward voltage: 2.08V
Reverse recovery time: 35ns
Application: automotive industry
Max. load current: 30A
Leakage current: 8µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; tube; Ifsm: 120A; TO220AB; Ir: 8uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AB
Max. forward voltage: 2.08V
Reverse recovery time: 35ns
Application: automotive industry
Max. load current: 30A
Leakage current: 8µA
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STTH16L06CT |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AB
Max. forward voltage: 2.08V
Reverse recovery time: 35ns
Max. load current: 30A
Leakage current: 8µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AB
Max. forward voltage: 2.08V
Reverse recovery time: 35ns
Max. load current: 30A
Leakage current: 8µA
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STTH16R04CT |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 120A; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AB
Max. forward voltage: 0.9V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 120A; TO220AB; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AB
Max. forward voltage: 0.9V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
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STTH16R04CG-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 76.75 грн |
L6506 |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; PWM controller; DIP18; Ch: 4; 4.5÷7V
Type of integrated circuit: driver
Kind of integrated circuit: PWM controller
Case: DIP18
Number of channels: 4
Mounting: THT
Operating temperature: -40...150°C
Supply voltage: 4.5...7V
Application: motors
DC supply current: 25mA
Category: Motor and PWM drivers
Description: IC: driver; PWM controller; DIP18; Ch: 4; 4.5÷7V
Type of integrated circuit: driver
Kind of integrated circuit: PWM controller
Case: DIP18
Number of channels: 4
Mounting: THT
Operating temperature: -40...150°C
Supply voltage: 4.5...7V
Application: motors
DC supply current: 25mA
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L6506D013TR |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SO20; Ch: 4; 70kHz; 10V; 25mA
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: SO20
Number of channels: 4
Mounting: SMD
On-state resistance: 1.3Ω
Operating temperature: 0...125°C
Frequency: 70kHz
Kind of package: reel; tape
Supply voltage: 10V
Operating current: 25mA
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SO20; Ch: 4; 70kHz; 10V; 25mA
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: SO20
Number of channels: 4
Mounting: SMD
On-state resistance: 1.3Ω
Operating temperature: 0...125°C
Frequency: 70kHz
Kind of package: reel; tape
Supply voltage: 10V
Operating current: 25mA
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T1610H-6T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 126A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 126A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 126A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 126A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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T1610T-8T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 126A; logic level
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 126A
Features of semiconductor devices: logic level
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 126A; logic level
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 126A
Features of semiconductor devices: logic level
Mounting: THT
Kind of package: tube
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T1610T-8G |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 126A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 126A
Mounting: SMD
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 126A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 126A
Mounting: SMD
Kind of package: tube
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T1610-800G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 160A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 160A
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 160A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 160A
Mounting: SMD
Kind of package: reel; tape
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T1610-600G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 160A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 160A
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 160A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 160A
Mounting: SMD
Kind of package: reel; tape
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T1610T-8I |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; TO220ABIns; Igt: 10mA; Ifsm: 126A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220ABIns
Gate current: 10mA
Max. forward impulse current: 126A
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220ABIns; Igt: 10mA; Ifsm: 126A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220ABIns
Gate current: 10mA
Max. forward impulse current: 126A
Mounting: THT
Kind of package: tube
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STM32L062K8T6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Case: LQFP32
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x4; USART x2; USB
Clock frequency: 32MHz
Number of inputs/outputs: 25
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of package: in-tray
Kind of architecture: Cortex M0+
Family: STM32L0
Number of 12bit D/A converters: 1
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Mounting: SMD
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Case: LQFP32
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x4; USART x2; USB
Clock frequency: 32MHz
Number of inputs/outputs: 25
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of package: in-tray
Kind of architecture: Cortex M0+
Family: STM32L0
Number of 12bit D/A converters: 1
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Mounting: SMD
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STM32L062K8U6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x4; USART x2; USB
Clock frequency: 32MHz
Number of inputs/outputs: 27
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of package: in-tray
Kind of architecture: Cortex M0+
Family: STM32L0
Number of 12bit D/A converters: 1
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Mounting: SMD
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x4; USART x2; USB
Clock frequency: 32MHz
Number of inputs/outputs: 27
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of package: in-tray
Kind of architecture: Cortex M0+
Family: STM32L0
Number of 12bit D/A converters: 1
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Mounting: SMD
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STEVAL-ILL062V1 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; base board; Comp: L7981D,STP16CPC26; 6÷24VDC
Operating voltage: 6...24V DC
Kit contents: base board
Interface: SPI
Number of channels: 16
Number of diodes: 32
Additional functions: DC/DC converter
Type of development kit: evaluation
Kind of integrated circuit: LED driver
Components: L7981D; STP16CPC26
Category: STM development kits
Description: Dev.kit: evaluation; base board; Comp: L7981D,STP16CPC26; 6÷24VDC
Operating voltage: 6...24V DC
Kit contents: base board
Interface: SPI
Number of channels: 16
Number of diodes: 32
Additional functions: DC/DC converter
Type of development kit: evaluation
Kind of integrated circuit: LED driver
Components: L7981D; STP16CPC26
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LD29150DT18R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 1.8V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: LD29150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 1.8V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: LD29150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
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STL47N60M6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 124A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 124A
Power dissipation: 190W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 52.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 124A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 124A
Power dissipation: 190W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 52.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF40NF20 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 40W; TO220FP
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Technology: STripFET™
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 40W; TO220FP
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Technology: STripFET™
Kind of channel: enhancement
на замовлення 21 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 226.95 грн |
7+ | 134.88 грн |
19+ | 127.98 грн |
STGW30NC120HD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 220W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 220W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 220W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 220W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 242 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 318.56 грн |
3+ | 265.92 грн |
5+ | 213.81 грн |
12+ | 202.31 грн |
30+ | 199.25 грн |
STEVAL-ILL049V12 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; base board,expansion board; 6÷24VDC; Ch: 1
Kind of integrated circuit: LED driver
Number of channels: 1
Operating current: 0.35A
Interface: PWM
Number of diodes: 10
Type of development kit: evaluation
Kind of connector: pin header
Components: LED6001; NCP18WB473J03RB
Operating voltage: 6...24V DC
Kit contents: base board; expansion board
Category: STM development kits
Description: Dev.kit: evaluation; base board,expansion board; 6÷24VDC; Ch: 1
Kind of integrated circuit: LED driver
Number of channels: 1
Operating current: 0.35A
Interface: PWM
Number of diodes: 10
Type of development kit: evaluation
Kind of connector: pin header
Components: LED6001; NCP18WB473J03RB
Operating voltage: 6...24V DC
Kit contents: base board; expansion board
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STEVAL-ILL079V1 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; expansion board; Comp: LED6000; 15÷30VDC
Kind of integrated circuit: LED driver
Operating current: 0.5A
Type of development kit: evaluation
Kind of connector: measuring terminal; pin strips
Topology: buck-boost
Components: LED6000
Operating voltage: 15...30V DC
Kit contents: expansion board
Category: STM development kits
Description: Dev.kit: evaluation; expansion board; Comp: LED6000; 15÷30VDC
Kind of integrated circuit: LED driver
Operating current: 0.5A
Type of development kit: evaluation
Kind of connector: measuring terminal; pin strips
Topology: buck-boost
Components: LED6000
Operating voltage: 15...30V DC
Kit contents: expansion board
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TDA7293HS |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 100W; 12÷50VDC; Ch: 1; Amp.class: AB; 4Ω
Type of integrated circuit: audio amplifier
Output power: 100W
Mounting: THT
Supply voltage: 12...50V DC
Number of channels: 1
Amplifier class: AB
Case: MULTIWATT15
Impedance: 4Ω
Kind of package: tube
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 100W; 12÷50VDC; Ch: 1; Amp.class: AB; 4Ω
Type of integrated circuit: audio amplifier
Output power: 100W
Mounting: THT
Supply voltage: 12...50V DC
Number of channels: 1
Amplifier class: AB
Case: MULTIWATT15
Impedance: 4Ω
Kind of package: tube
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SMCJ26A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30.4V; 37A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30.4V; 37A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2180 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.87 грн |
10+ | 40.00 грн |
61+ | 14.71 грн |
167+ | 13.95 грн |
STM32F205VGT6V |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP100; 1.8÷3.6VDC
Supply voltage: 1.8...3.6V DC
Operating temperature: -40...85°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Clock frequency: 120MHz
Number of inputs/outputs: 82
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Kind of architecture: Cortex M3
Family: STM32F2
Memory: 128kB RAM; 1MB FLASH
Mounting: SMD
Case: LQFP100
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP100; 1.8÷3.6VDC
Supply voltage: 1.8...3.6V DC
Operating temperature: -40...85°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Clock frequency: 120MHz
Number of inputs/outputs: 82
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Kind of architecture: Cortex M3
Family: STM32F2
Memory: 128kB RAM; 1MB FLASH
Mounting: SMD
Case: LQFP100
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TSV611AILT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 120kHz; Ch: 1; SOT23-5; 1.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 120kHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 40mV/μs
Quiescent current: 15µA
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: 1.5...5.5V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 120kHz; Ch: 1; SOT23-5; 1.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 120kHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 40mV/μs
Quiescent current: 15µA
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: 1.5...5.5V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
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STL25N60M2-EP |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 64A; 125W
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 29nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 64A
Mounting: SMD
Case: PowerFLAT 8x8
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.205Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 64A; 125W
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 29nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 64A
Mounting: SMD
Case: PowerFLAT 8x8
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.205Ω
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ST1480ACDR |
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Виробник: STMicroelectronics
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; RS422,RS485; 12Mbps; SO8; 3.3VDC
Interface: RS422; RS485
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Type of integrated circuit: interface
Data transfer rate: 12Mbps
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: transceiver
Mounting: SMD
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; RS422,RS485; 12Mbps; SO8; 3.3VDC
Interface: RS422; RS485
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Type of integrated circuit: interface
Data transfer rate: 12Mbps
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: transceiver
Mounting: SMD
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BAT54WFILMY |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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STEVAL-IPM08B |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; expansion board; Comp: STGIB8CH60TS-L; 4.8A
Power: 800W
Operating voltage: 125...400V AC
Kit contents: expansion board
Output current: 4.8A
Interface: GPIO
Application: motors
Additional functions: speed sensor; temperature sensor
Protection: anti-overload OPP; overheating OTP
Type of development kit: evaluation
Components: STGIB8CH60TS-L
Number of add-on connectors: 1
Kind of connector: Motor Control Expansion Connector; screw
Category: STM development kits
Description: Dev.kit: evaluation; expansion board; Comp: STGIB8CH60TS-L; 4.8A
Power: 800W
Operating voltage: 125...400V AC
Kit contents: expansion board
Output current: 4.8A
Interface: GPIO
Application: motors
Additional functions: speed sensor; temperature sensor
Protection: anti-overload OPP; overheating OTP
Type of development kit: evaluation
Components: STGIB8CH60TS-L
Number of add-on connectors: 1
Kind of connector: Motor Control Expansion Connector; screw
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STEVAL-ISA082V1 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; prototype board; Comp: ST1S40IPHR; 800kHz
Type of development kit: evaluation
Kit contents: prototype board
Components: ST1S40IPHR
Kind of connector: pin header
Application: power supply
Frequency: 800kHz
Operating voltage: 4...18V DC
Output voltage: 3.3V
Output current: 3A
Protection: short circuit protection SCP
Category: STM development kits
Description: Dev.kit: evaluation; prototype board; Comp: ST1S40IPHR; 800kHz
Type of development kit: evaluation
Kit contents: prototype board
Components: ST1S40IPHR
Kind of connector: pin header
Application: power supply
Frequency: 800kHz
Operating voltage: 4...18V DC
Output voltage: 3.3V
Output current: 3A
Protection: short circuit protection SCP
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STL9P3LLH6 |
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Виробник: STMicroelectronics
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 34.66 грн |
STL30P3LLH6 |
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Виробник: STMicroelectronics
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -36A; 4.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -36A
Power dissipation: 4.8W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -36A; 4.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -36A
Power dissipation: 4.8W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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STM32F303RET7TR |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 638.77 грн |
STTH1R02A | ![]() |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 15ns; SMA; Ufmax: 0.7V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.7V
Max. forward impulse current: 60A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 15ns; SMA; Ufmax: 0.7V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.7V
Max. forward impulse current: 60A
Kind of package: reel; tape
на замовлення 3024 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.06 грн |
22+ | 17.47 грн |
50+ | 12.34 грн |
100+ | 10.73 грн |
130+ | 6.97 грн |
358+ | 6.59 грн |
2500+ | 6.36 грн |
TS924AIYPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; TSSOP14; 2.7÷12VDC
Operating temperature: -40...125°C
Type of integrated circuit: operational amplifier
Number of channels: 4
Bandwidth: 4MHz
Input offset voltage: 1.8mV
Application: automotive industry
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Slew rate: 1.3V/μs
Input offset current: 30nA
Input bias current: 0.1µA
Voltage supply range: 2.7...12V DC
Mounting: SMT
Case: TSSOP14
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; TSSOP14; 2.7÷12VDC
Operating temperature: -40...125°C
Type of integrated circuit: operational amplifier
Number of channels: 4
Bandwidth: 4MHz
Input offset voltage: 1.8mV
Application: automotive industry
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Slew rate: 1.3V/μs
Input offset current: 30nA
Input bias current: 0.1µA
Voltage supply range: 2.7...12V DC
Mounting: SMT
Case: TSSOP14
на замовлення 48 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 176.61 грн |
10+ | 124.15 грн |
14+ | 68.97 грн |
36+ | 65.14 грн |
ESDAXLC18-1BF4 |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 2.2A; bidirectional; 0201; ESD
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 50W
Mounting: SMD
Case: 0201
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Max. forward impulse current: 2.2A
Leakage current: 30nA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 2.2A; bidirectional; 0201; ESD
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 50W
Mounting: SMD
Case: 0201
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Max. forward impulse current: 2.2A
Leakage current: 30nA
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T2035H-6I |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 20A; TO220ABIns; Igt: 35mA; Snubberless™
Case: TO220ABIns
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: Snubberless™
Type of thyristor: triac
Mounting: THT
Category: Triacs
Description: Triac; 600V; 20A; TO220ABIns; Igt: 35mA; Snubberless™
Case: TO220ABIns
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: Snubberless™
Type of thyristor: triac
Mounting: THT
на замовлення 103 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 151.85 грн |
10+ | 106.52 грн |
12+ | 78.17 грн |
32+ | 73.57 грн |
100+ | 71.27 грн |
T2035H-6T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 20A; TO220AB; Igt: 35mA; Snubberless™
Case: TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: Snubberless™
Type of thyristor: triac
Mounting: THT
Category: Triacs
Description: Triac; 600V; 20A; TO220AB; Igt: 35mA; Snubberless™
Case: TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: Snubberless™
Type of thyristor: triac
Mounting: THT
на замовлення 104 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 129.57 грн |
10+ | 90.43 грн |
13+ | 70.50 грн |
36+ | 66.67 грн |
100+ | 64.37 грн |
STL320N4LF8 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 360A; Idm: 1440A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 360A
Pulsed drain current: 1.44kA
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 360A; Idm: 1440A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 360A
Pulsed drain current: 1.44kA
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
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STPS3150UF |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Max. forward impulse current: 80A
Kind of package: reel; tape
на замовлення 5964 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.31 грн |
17+ | 23.60 грн |
75+ | 12.03 грн |
207+ | 11.34 грн |
1000+ | 11.04 грн |
2000+ | 10.96 грн |
STPS3150RL |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
Kind of package: reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
Kind of package: reel
на замовлення 1588 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.06 грн |
19+ | 20.23 грн |
100+ | 14.25 грн |
101+ | 8.97 грн |
278+ | 8.43 грн |
STPS3150UY |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
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TS914ID |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 4; SO14; 2.7÷16VDC; IB: 300pA
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 0.5V/μs
Quiescent current: 400µA
Operating temperature: -40...125°C
Input offset voltage: 12mV
Voltage supply range: 2.7...16V DC
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 4; SO14; 2.7÷16VDC; IB: 300pA
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 0.5V/μs
Quiescent current: 400µA
Operating temperature: -40...125°C
Input offset voltage: 12mV
Voltage supply range: 2.7...16V DC
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 94.08 грн |
10+ | 65.14 грн |
21+ | 44.45 грн |
D44H8 |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 50W
Case: TO220
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 50W
Case: TO220
Mounting: THT
Kind of package: tube
на замовлення 4 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 103.16 грн |
STM32F051R8T7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 55
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: GPIO; HDMI CEC; I2C; IrDA; LIN; SPI; SWD; USART
Kind of architecture: Cortex M0
Integrated circuit features: DMA; PdR; PoR; PVD; watchdog
Memory: 8kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Number of comparators: 2
Family: STM32F0
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 55
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: GPIO; HDMI CEC; I2C; IrDA; LIN; SPI; SWD; USART
Kind of architecture: Cortex M0
Integrated circuit features: DMA; PdR; PoR; PVD; watchdog
Memory: 8kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Number of comparators: 2
Family: STM32F0
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M24C04-DRMN8TP/K |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 14.36 грн |
SM6T15CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 2283 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 53.64 грн |
10+ | 38.62 грн |
100+ | 25.52 грн |
103+ | 8.81 грн |
283+ | 8.28 грн |
STM1817SWX7F |
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Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: high
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 2.88V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: high
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 2.88V
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SMBJ13A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2191 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.46 грн |
26+ | 14.94 грн |
50+ | 12.95 грн |
100+ | 12.18 грн |
148+ | 6.13 грн |
405+ | 5.82 грн |