Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (130165) > Сторінка 2164 з 2170
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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STPS10H100CFP | STMicroelectronics |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.85V Type of diode: Schottky rectifying Case: TO220FP Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Max. forward impulse current: 180A Kind of package: tube Max. load current: 10A |
на замовлення 909 шт: термін постачання 14-30 дні (днів) |
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STPS10H100CG-TR | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Max. forward impulse current: 180A Kind of package: reel; tape Max. load current: 10A |
на замовлення 447 шт: термін постачання 14-30 дні (днів) |
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STPS10H100CT | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.85V Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Max. forward impulse current: 180A Kind of package: tube Heatsink thickness: 1.23...1.32mm Max. load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STPS10H100SFY | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 0.1kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.845V Max. forward impulse current: 230A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||||||
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LF80ABDT-TR | STMicroelectronics |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 8V; 0.5A; DPAK; SMD; LFXX Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.45V Output voltage: 8V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.5...16V Manufacturer series: LFXX |
на замовлення 1349 шт: термін постачання 14-30 дні (днів) |
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LF80CDT-TR | STMicroelectronics |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 8V; 0.5A; DPAK; SMD; LFXX Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.45V Output voltage: 8V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...16V Manufacturer series: LFXX |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STEVAL-ILL061V1 | STMicroelectronics |
Category: STM development kits Description: Dev.kit: evaluation; Comp: LED1642GW,STM32F103CX; 6÷28VDC Type of development kit: evaluation Components: LED1642GW; STM32F103CX Interface: PWM; SPI Connection: Jack 3.5mm socket; pin strips Operating voltage: 6...28V DC Kit contents: base board Additional functions: DC/DC converter Number of diodes: 16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STEVAL-ILL073V1 | STMicroelectronics |
Category: STM development kits Description: Dev.kit: evaluation; Comp: ALED1642GW,STM8A; 1MHz; 6÷28VDC Type of development kit: evaluation Components: ALED1642GW; STM8A Interface: PWM; SPI; UART Connection: Jack 3.5mm socket; pin strips Frequency: 1MHz Operating voltage: 6...28V DC Kind of integrated circuit: LED driver Kit contents: base board Additional functions: DC/DC converter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STD80N10F7 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 85W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Pulsed drain current: 280A Power dissipation: 85W Case: DPAK Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| T2035H-8I | STMicroelectronics |
Category: Triacs Description: Triac; 800V; 20A; TO220ABIns; Igt: 35mA; Ifsm: 210A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 20A Case: TO220ABIns Gate current: 35mA Max. forward impulse current: 210A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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T2035H-8G | STMicroelectronics |
Category: Triacs Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 20A Case: D2PAK Gate current: 35mA Max. forward impulse current: 210A Features of semiconductor devices: high temperature Mounting: SMD Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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T2035H-8G-TR | STMicroelectronics |
Category: Triacs Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 20A Case: D2PAK Gate current: 35mA Max. forward impulse current: 210A Features of semiconductor devices: high temperature Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1.5KE250CA | STMicroelectronics |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 250V; 5A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 213V Breakdown voltage: 250V Max. forward impulse current: 5A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STPS140ZY | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Leakage current: 5mA Max. forward impulse current: 5.5A Kind of package: reel; tape Application: automotive industry |
на замовлення 110 шт: термін постачання 14-30 дні (днів) |
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| STM32U5G9NJH6Q | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller Type of integrated circuit: STM32 ARM microcontroller |
на замовлення 95 шт: термін постачання 14-30 дні (днів) |
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L9904 | STMicroelectronics |
Category: Motor and PWM drivers Description: IC: driver; motor controller; SO20; 0.13A; 149kHz; 8÷28V Type of integrated circuit: driver Kind of integrated circuit: motor controller Case: SO20 DC supply current: -100mA Mounting: SMD Operating temperature: -40...150°C Application: automotive industry Frequency: 149kHz Supply voltage: 8...28V Output current: 0.13A |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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L9904TR | STMicroelectronics |
Category: Motor and PWM drivers Description: IC: driver; motor controller; SO20; 149kHz; 8÷28V Type of integrated circuit: driver Kind of integrated circuit: motor controller Case: SO20 DC supply current: -100mA Mounting: SMD Operating temperature: -40...150°C Application: automotive industry Frequency: 149kHz Kind of package: reel; tape Supply voltage: 8...28V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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ST730MR | STMicroelectronics |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2.8÷5V; 0.3A; SMD Type of integrated circuit: voltage regulator Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Number of channels: 1 Tolerance: ±2% Kind of voltage regulator: adjustable; LDO; linear Manufacturer series: ST730 Input voltage: 2.5...28V Output current: 0.3A Output voltage: 2.8...5V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STB12NK80ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10.5A; 190W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.5A Power dissipation: 190W Case: D2PAK On-state resistance: 0.75Ω Mounting: SMD Gate charge: 87nC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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EMIF01-10005W5 | STMicroelectronics |
Category: Filters - integrated circuits Description: Filter: digital; line terminator; lowpass,EMI; SOT323-5L; Ch: 2 Type of filter: digital Kind of integrated circuit: line terminator Kind of filter: EMI; lowpass Case: SOT323-5L Mounting: SMD Filter order: 2 Number of channels: 2 Application: USB port ESD protection |
на замовлення 2479 шт: термін постачання 14-30 дні (днів) |
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SM4T28CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 28.1V; 10.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Application: automotive industry Kind of package: reel; tape |
на замовлення 4662 шт: термін постачання 14-30 дні (днів) |
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STP5NK80Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3; ESD Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 251 шт: термін постачання 14-30 дні (днів) |
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FERD40H100SG-TR | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 40A; D2PAK; Ufmax: 0.325V; Ifsm: 440A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 40A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 0.325V Max. forward impulse current: 0.44kA Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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STW14NK50Z | STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; 150W; TO247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 53 шт: термін постачання 14-30 дні (днів) |
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STWA70N65DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A Case: TO247 Mounting: THT Kind of package: tube Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±25V On-state resistance: 40mΩ Pulsed drain current: 260A Power dissipation: 450W Gate charge: 125nC Polarisation: unipolar Technology: MDmesh™ DM6 Drain current: 43A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STP310N10F7 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; DeepGATE™; unipolar; 100V; 120A; 315W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 315W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: DeepGATE™; STripFET™ VII |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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| STW10N105K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 3.78A Pulsed drain current: 24A Power dissipation: 130W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 21.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STPS20H100CR | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; Ufmax: 0.88V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: I2PAK Max. forward voltage: 0.88V Max. load current: 30A Max. forward impulse current: 250A Leakage current: 6mA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STP65N150M9 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.5A Pulsed drain current: 60A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement Version: ESD Technology: MDmesh™ M9 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMA6J24A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 28.1V; 80A; unidirectional; SMA; reel,tape; SMA6J Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 80A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.2µA Kind of package: reel; tape Manufacturer series: SMA6J |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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STPSC20H065CW | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Case: TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 470A Max. forward voltage: 2.5V Technology: SiC Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 36A Semiconductor structure: common cathode; double Type of diode: Schottky rectifying |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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STPSC20H065CT | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO220AB; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 2.5V Max. load current: 36A Max. forward impulse current: 470A Kind of package: tube Heatsink thickness: 1.23...1.32mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STPSC20H065CWY | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247; Ir: 425uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247 Max. forward voltage: 2.5V Max. load current: 22A Max. forward impulse current: 470A Leakage current: 425µA Kind of package: tube Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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L6926013TR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuits Description: Driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Input voltage: 2...5.5V DC Case: TSSOP8 Mounting: SMD Frequency: 800kHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C Kind of package: reel; tape Output voltage: 0.6...38V DC |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
| L6924D013TR | STMicroelectronics |
Category: Battery and battery cells controllers Description: IC: PMIC; battery charging controller; Li-Ion/Polymer; Iout: 1A Type of integrated circuit: PMIC Kind of integrated circuit: battery charging controller Case: VFQFPN16 Mounting: SMD Operating temperature: -40...125°C Supply voltage: 2.5...12V DC Output current: 1A Integrated circuit features: Li-Ion/Polymer Output voltage: 4.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| L6924UTR | STMicroelectronics |
Category: Battery and battery cells controllers Description: IC: PMIC; battery charging controller; Li-Ion/Polymer; Iout: 1A Type of integrated circuit: PMIC Kind of integrated circuit: battery charging controller Case: VFQFPN16 Mounting: SMD Operating temperature: -40...125°C Interface: USB Supply voltage: 2.5...12V DC Output current: 1A Integrated circuit features: Li-Ion/Polymer Output voltage: 4.1V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
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L6926Q1TR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuits Description: Driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Input voltage: 2...5.5V DC Case: TSSOP8 Mounting: SMD Frequency: 800kHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C Kind of package: reel; tape Output voltage: 0.6...38V DC |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
| L6928Q1TR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuits Description: Driver; DC/DC converter; Uin: 2÷5.5VDC; VFQFPN8; SMD; 1.4MHz; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Input voltage: 2...5.5V DC Case: VFQFPN8 Mounting: SMD Frequency: 1.4MHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
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1.5KE68CA | STMicroelectronics |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 68V; 17.7A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 53V Breakdown voltage: 68V Max. forward impulse current: 17.7A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD678A | STMicroelectronics |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 40W Case: SOT32 Current gain: 750 Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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STD2NK100Z | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.16A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 8.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 372 шт: термін постачання 14-30 дні (днів) |
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STB9NK50ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.5A; 110W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.5A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
| M95640-DFDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: SPI Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
| M95640-DFMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; MLP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: SPI Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 20MHz Mounting: SMD Case: MLP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
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M95640-DFMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: SPI Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 20MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| M95640-DRDW3TP/K | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; SPI; 8kx8bit; TSSOP8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: SPI Memory organisation: 8kx8bit Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 20ns |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
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M95640-RMN6P | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: SPI Memory organisation: 8kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SCTH60N120G2-7 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 390W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 60A On-state resistance: 52mΩ Power dissipation: 390W Gate charge: 94nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -10...22V Kind of package: reel; tape Case: H2PAK7 Mounting: SMD Pulsed drain current: 177A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCTWA60N120G2-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 389W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 60A On-state resistance: 52mΩ Power dissipation: 389W Gate charge: 94nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -10...22V Kind of package: tube Case: HIP247-4 Mounting: THT Pulsed drain current: 177A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ESDCAN01-2BLY | STMicroelectronics |
Category: Protection diodes - arrays Description: Diode: TVS array; 25÷30V; 5.5A; bidirectional; ESD; SOT23; Ch: 2 Version: ESD Semiconductor structure: bidirectional Leakage current: 0.1µA Case: SOT23 Capacitance: 30pF Type of diode: TVS array Number of channels: 2 Mounting: SMD Breakdown voltage: 25...30V Max. forward impulse current: 5.5A Application: automotive industry Max. off-state voltage: 24V |
на замовлення 1773 шт: термін постачання 14-30 дні (днів) |
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STP46N60M6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 126A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 126A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 53.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ20A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 22.2V; 54A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Max. off-state voltage: 20V Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 0.4kW Leakage current: 1µA Breakdown voltage: 22.2V Manufacturer series: SMAJ Max. forward impulse current: 54A |
на замовлення 8453 шт: термін постачання 14-30 дні (днів) |
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STM32F378RCT6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 1.8VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 1.8V DC Interface: CAN; GPIO; I2C; I2S; SPI; USART Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; PoR; watchdog Memory: 32kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 2 Number of 12bit D/A converters: 3 Family: STM32F3 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STM32F378VCT6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 1.8VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 83 Case: LQFP100 Supply voltage: 1.8V DC Interface: CAN; GPIO; I2C; I2S; SPI; USART Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; PoR; watchdog Memory: 32kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 2 Number of 12bit D/A converters: 3 Family: STM32F3 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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VIPER26HD | STMicroelectronics |
Category: Voltage regulators - PWM circuits Description: IC: driver; flyback; SO16; 3A; 800V; Uin: 11.5÷23.5V; 115kHz Type of integrated circuit: driver Topology: flyback Case: SO16 Output current: 3A Output voltage: 800V Mounting: SMD Operating temperature: -40...150°C Frequency: 115kHz Kind of package: tube Input voltage: 11.5...23.5V |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||||
| VIPER28HN | STMicroelectronics |
Category: Voltage regulators - PWM circuits Description: IC: driver Type of integrated circuit: driver |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||||||||||||||||
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VIPER28LD | STMicroelectronics |
Category: Voltage regulators - PWM circuits Description: IC: driver; flyback; SO16; 1.2A; 1.5W; 8.5÷23.5V; 60kHz Type of integrated circuit: driver Topology: flyback Case: SO16 Output current: 1.2A Mounting: SMD Operating temperature: -40...150°C Frequency: 60kHz Input voltage: 8.5...23.5V DC supply current: 2.5mA Power: 1.5W |
на замовлення 1500 шт: термін постачання 14-30 дні (днів) |
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VIPER38HD | STMicroelectronics |
Category: Voltage regulators - PWM circuits Description: IC: driver; flyback; SO16; 800V; Uin: 8.5÷23.5V; 115kHz Type of integrated circuit: driver Topology: flyback Case: SO16 Output voltage: 800V Mounting: SMD Operating temperature: -40...150°C Input voltage: 8.5...23.5V Frequency: 115kHz |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||||
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VIPER318LDTR | STMicroelectronics |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; 800V; 60kHz; SO16; boost,buck,buck-boost,flyback Type of integrated circuit: PMIC Output voltage: 800V Frequency: 60kHz Case: SO16 Mounting: SMD Operating temperature: -40...150°C Topology: boost; buck; buck-boost; flyback Integrated circuit features: PWM |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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VIPER317HDTR | STMicroelectronics |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; 15V; 132kHz; SO16; boost,buck,buck-boost,flyback Type of integrated circuit: PMIC Output voltage: 15V Frequency: 132kHz Case: SO16 Mounting: SMD Operating temperature: -40...150°C Topology: boost; buck; buck-boost; flyback Input voltage: 4.5...30V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| STPS10H100CFP |
|
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: tube
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220FP; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: tube
Max. load current: 10A
на замовлення 909 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.97 грн |
| 13+ | 32.38 грн |
| 50+ | 24.10 грн |
| 100+ | 21.76 грн |
| 500+ | 20.33 грн |
| STPS10H100CG-TR |
|
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: reel; tape
Max. load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: reel; tape
Max. load current: 10A
на замовлення 447 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 74.80 грн |
| 10+ | 44.35 грн |
| 100+ | 33.81 грн |
| STPS10H100CT |
|
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. load current: 10A
товару немає в наявності
В кошику
од. на суму грн.
| STPS10H100SFY |
|
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.845V
Max. forward impulse current: 230A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| LF80ABDT-TR |
|
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 8V; 0.5A; DPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...16V
Manufacturer series: LFXX
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 8V; 0.5A; DPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...16V
Manufacturer series: LFXX
на замовлення 1349 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.98 грн |
| 10+ | 44.35 грн |
| 25+ | 41.17 грн |
| 50+ | 39.75 грн |
| 100+ | 38.41 грн |
| 250+ | 36.73 грн |
| 500+ | 35.40 грн |
| 1000+ | 34.22 грн |
| LF80CDT-TR |
|
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 8V; 0.5A; DPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
Manufacturer series: LFXX
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 8V; 0.5A; DPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
Manufacturer series: LFXX
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-ILL061V1 |
|
Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: LED1642GW,STM32F103CX; 6÷28VDC
Type of development kit: evaluation
Components: LED1642GW; STM32F103CX
Interface: PWM; SPI
Connection: Jack 3.5mm socket; pin strips
Operating voltage: 6...28V DC
Kit contents: base board
Additional functions: DC/DC converter
Number of diodes: 16
Category: STM development kits
Description: Dev.kit: evaluation; Comp: LED1642GW,STM32F103CX; 6÷28VDC
Type of development kit: evaluation
Components: LED1642GW; STM32F103CX
Interface: PWM; SPI
Connection: Jack 3.5mm socket; pin strips
Operating voltage: 6...28V DC
Kit contents: base board
Additional functions: DC/DC converter
Number of diodes: 16
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-ILL073V1 |
|
Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: ALED1642GW,STM8A; 1MHz; 6÷28VDC
Type of development kit: evaluation
Components: ALED1642GW; STM8A
Interface: PWM; SPI; UART
Connection: Jack 3.5mm socket; pin strips
Frequency: 1MHz
Operating voltage: 6...28V DC
Kind of integrated circuit: LED driver
Kit contents: base board
Additional functions: DC/DC converter
Category: STM development kits
Description: Dev.kit: evaluation; Comp: ALED1642GW,STM8A; 1MHz; 6÷28VDC
Type of development kit: evaluation
Components: ALED1642GW; STM8A
Interface: PWM; SPI; UART
Connection: Jack 3.5mm socket; pin strips
Frequency: 1MHz
Operating voltage: 6...28V DC
Kind of integrated circuit: LED driver
Kit contents: base board
Additional functions: DC/DC converter
товару немає в наявності
В кошику
од. на суму грн.
| STD80N10F7 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 85W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 85W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| T2035H-8I |
|
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; TO220ABIns; Igt: 35mA; Ifsm: 210A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 210A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 20A; TO220ABIns; Igt: 35mA; Ifsm: 210A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: TO220ABIns
Gate current: 35mA
Max. forward impulse current: 210A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| T2035H-8G |
|
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 210A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 210A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| T2035H-8G-TR |
|
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 210A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 20A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 210A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE250CA |
|
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 250V; 5A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 213V
Breakdown voltage: 250V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 250V; 5A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 213V
Breakdown voltage: 250V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
товару немає в наявності
В кошику
од. на суму грн.
| STPS140ZY |
|
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Leakage current: 5mA
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Leakage current: 5mA
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.23 грн |
| 24+ | 17.91 грн |
| 28+ | 15.40 грн |
| 100+ | 8.94 грн |
| STM32U5G9NJH6Q |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 95+ | 1153.47 грн |
| L9904 |
|
Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SO20; 0.13A; 149kHz; 8÷28V
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: SO20
DC supply current: -100mA
Mounting: SMD
Operating temperature: -40...150°C
Application: automotive industry
Frequency: 149kHz
Supply voltage: 8...28V
Output current: 0.13A
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SO20; 0.13A; 149kHz; 8÷28V
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: SO20
DC supply current: -100mA
Mounting: SMD
Operating temperature: -40...150°C
Application: automotive industry
Frequency: 149kHz
Supply voltage: 8...28V
Output current: 0.13A
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 270.34 грн |
| 10+ | 230.11 грн |
| L9904TR |
|
Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SO20; 149kHz; 8÷28V
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: SO20
DC supply current: -100mA
Mounting: SMD
Operating temperature: -40...150°C
Application: automotive industry
Frequency: 149kHz
Kind of package: reel; tape
Supply voltage: 8...28V
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SO20; 149kHz; 8÷28V
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: SO20
DC supply current: -100mA
Mounting: SMD
Operating temperature: -40...150°C
Application: automotive industry
Frequency: 149kHz
Kind of package: reel; tape
Supply voltage: 8...28V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| ST730MR |
|
Виробник: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.8÷5V; 0.3A; SMD
Type of integrated circuit: voltage regulator
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: ST730
Input voltage: 2.5...28V
Output current: 0.3A
Output voltage: 2.8...5V
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.8÷5V; 0.3A; SMD
Type of integrated circuit: voltage regulator
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: ST730
Input voltage: 2.5...28V
Output current: 0.3A
Output voltage: 2.8...5V
Kind of package: reel; tape
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| STB12NK80ZT4 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.5A; 190W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 190W
Case: D2PAK
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 87nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.5A; 190W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 190W
Case: D2PAK
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 87nC
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Мінімальне замовлення: 1000 шт
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| EMIF01-10005W5 |
|
Виробник: STMicroelectronics
Category: Filters - integrated circuits
Description: Filter: digital; line terminator; lowpass,EMI; SOT323-5L; Ch: 2
Type of filter: digital
Kind of integrated circuit: line terminator
Kind of filter: EMI; lowpass
Case: SOT323-5L
Mounting: SMD
Filter order: 2
Number of channels: 2
Application: USB port ESD protection
Category: Filters - integrated circuits
Description: Filter: digital; line terminator; lowpass,EMI; SOT323-5L; Ch: 2
Type of filter: digital
Kind of integrated circuit: line terminator
Kind of filter: EMI; lowpass
Case: SOT323-5L
Mounting: SMD
Filter order: 2
Number of channels: 2
Application: USB port ESD protection
на замовлення 2479 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.33 грн |
| 24+ | 18.07 грн |
| 26+ | 16.40 грн |
| 50+ | 15.15 грн |
| 100+ | 14.06 грн |
| 250+ | 12.89 грн |
| 500+ | 12.80 грн |
| SM4T28CAY |
|
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.1V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.1V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Application: automotive industry
Kind of package: reel; tape
на замовлення 4662 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.17 грн |
| 10+ | 42.01 грн |
| 12+ | 37.24 грн |
| 100+ | 24.77 грн |
| 250+ | 22.17 грн |
| 500+ | 21.00 грн |
| STP5NK80Z |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 251 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 207.26 грн |
| 10+ | 132.21 грн |
| 25+ | 110.46 грн |
| 40+ | 101.25 грн |
| 50+ | 97.07 грн |
| 100+ | 87.03 грн |
| FERD40H100SG-TR |
|
Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 40A; D2PAK; Ufmax: 0.325V; Ifsm: 440A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 40A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.325V
Max. forward impulse current: 0.44kA
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 40A; D2PAK; Ufmax: 0.325V; Ifsm: 440A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 40A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.325V
Max. forward impulse current: 0.44kA
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
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Мінімальне замовлення: 1000 шт
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| STW14NK50Z |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 150W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 150W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 53 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 211.71 грн |
| 10+ | 177.40 грн |
| 30+ | 160.66 грн |
| STWA70N65DM6 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Case: TO247
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Pulsed drain current: 260A
Power dissipation: 450W
Gate charge: 125nC
Polarisation: unipolar
Technology: MDmesh™ DM6
Drain current: 43A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Case: TO247
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Pulsed drain current: 260A
Power dissipation: 450W
Gate charge: 125nC
Polarisation: unipolar
Technology: MDmesh™ DM6
Drain current: 43A
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| STP310N10F7 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; DeepGATE™; unipolar; 100V; 120A; 315W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: DeepGATE™; STripFET™ VII
Category: THT N channel transistors
Description: Transistor: N-MOSFET; DeepGATE™; unipolar; 100V; 120A; 315W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: DeepGATE™; STripFET™ VII
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 307.94 грн |
| 10+ | 273.63 грн |
| STW10N105K5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Pulsed drain current: 24A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 21.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Pulsed drain current: 24A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 21.5nC
Kind of package: tube
Kind of channel: enhancement
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| STPS20H100CR |
|
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; Ufmax: 0.88V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.88V
Max. load current: 30A
Max. forward impulse current: 250A
Leakage current: 6mA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; Ufmax: 0.88V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.88V
Max. load current: 30A
Max. forward impulse current: 250A
Leakage current: 6mA
Kind of package: tube
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| STP65N150M9 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ M9
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ M9
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| SMA6J24A-TR |
|
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.1V; 80A; unidirectional; SMA; reel,tape; SMA6J
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 80A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Manufacturer series: SMA6J
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.1V; 80A; unidirectional; SMA; reel,tape; SMA6J
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 80A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.2µA
Kind of package: reel; tape
Manufacturer series: SMA6J
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Мінімальне замовлення: 5000 шт
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| STPSC20H065CW |
|
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 470A
Max. forward voltage: 2.5V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 36A
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 470A
Max. forward voltage: 2.5V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A x2
Max. load current: 36A
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 420.84 грн |
| 5+ | 366.51 грн |
| STPSC20H065CT |
|
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 2.5V
Max. load current: 36A
Max. forward impulse current: 470A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 2.5V
Max. load current: 36A
Max. forward impulse current: 470A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
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| STPSC20H065CWY |
|
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247; Ir: 425uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 2.5V
Max. load current: 22A
Max. forward impulse current: 470A
Leakage current: 425µA
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247; Ir: 425uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 2.5V
Max. load current: 22A
Max. forward impulse current: 470A
Leakage current: 425µA
Kind of package: tube
Application: automotive industry
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| L6926013TR |
|
Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 2...5.5V DC
Case: TSSOP8
Mounting: SMD
Frequency: 800kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Output voltage: 0.6...38V DC
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 2...5.5V DC
Case: TSSOP8
Mounting: SMD
Frequency: 800kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Output voltage: 0.6...38V DC
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Мінімальне замовлення: 4000 шт
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| L6924D013TR |
|
Виробник: STMicroelectronics
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Li-Ion/Polymer; Iout: 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Case: VFQFPN16
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.5...12V DC
Output current: 1A
Integrated circuit features: Li-Ion/Polymer
Output voltage: 4.1V
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Li-Ion/Polymer; Iout: 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Case: VFQFPN16
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.5...12V DC
Output current: 1A
Integrated circuit features: Li-Ion/Polymer
Output voltage: 4.1V
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| L6924UTR |
|
Виробник: STMicroelectronics
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Li-Ion/Polymer; Iout: 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Case: VFQFPN16
Mounting: SMD
Operating temperature: -40...125°C
Interface: USB
Supply voltage: 2.5...12V DC
Output current: 1A
Integrated circuit features: Li-Ion/Polymer
Output voltage: 4.1V
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Li-Ion/Polymer; Iout: 1A
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Case: VFQFPN16
Mounting: SMD
Operating temperature: -40...125°C
Interface: USB
Supply voltage: 2.5...12V DC
Output current: 1A
Integrated circuit features: Li-Ion/Polymer
Output voltage: 4.1V
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| L6926Q1TR |
|
Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 2...5.5V DC
Case: TSSOP8
Mounting: SMD
Frequency: 800kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Output voltage: 0.6...38V DC
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 2÷5.5VDC; Uout: 0.6÷38VDC; TSSOP8
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 2...5.5V DC
Case: TSSOP8
Mounting: SMD
Frequency: 800kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Output voltage: 0.6...38V DC
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Мінімальне замовлення: 4000 шт
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| L6928Q1TR |
|
Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 2÷5.5VDC; VFQFPN8; SMD; 1.4MHz; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 2...5.5V DC
Case: VFQFPN8
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 2÷5.5VDC; VFQFPN8; SMD; 1.4MHz; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 2...5.5V DC
Case: VFQFPN8
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
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Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| 1.5KE68CA |
|
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 68V; 17.7A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 53V
Breakdown voltage: 68V
Max. forward impulse current: 17.7A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 68V; 17.7A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 53V
Breakdown voltage: 68V
Max. forward impulse current: 17.7A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
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| BD678A |
|
Виробник: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
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Мінімальне замовлення: 3 шт
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| STD2NK100Z |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.16A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.16A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 372 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 140.58 грн |
| 10+ | 88.20 грн |
| 75+ | 69.37 грн |
| 100+ | 67.36 грн |
| 250+ | 61.92 грн |
| STB9NK50ZT4 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.5A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.5A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.5A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.5A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| M95640-DFDW6TP |
|
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
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Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| M95640-DFMC6TG |
|
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; MLP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: MLP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; MLP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: MLP8
Kind of interface: serial
Operating temperature: -40...85°C
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Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| M95640-DFMN6TP |
|
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.7÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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В кошику
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| M95640-DRDW3TP/K |
|
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; SPI; 8kx8bit; TSSOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 20ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; SPI; 8kx8bit; TSSOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 20ns
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| M95640-RMN6P |
|
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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| SCTH60N120G2-7 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 390W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 52mΩ
Power dissipation: 390W
Gate charge: 94nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
Kind of package: reel; tape
Case: H2PAK7
Mounting: SMD
Pulsed drain current: 177A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 390W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 52mΩ
Power dissipation: 390W
Gate charge: 94nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
Kind of package: reel; tape
Case: H2PAK7
Mounting: SMD
Pulsed drain current: 177A
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| SCTWA60N120G2-4 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 389W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 52mΩ
Power dissipation: 389W
Gate charge: 94nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
Kind of package: tube
Case: HIP247-4
Mounting: THT
Pulsed drain current: 177A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 389W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 52mΩ
Power dissipation: 389W
Gate charge: 94nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
Kind of package: tube
Case: HIP247-4
Mounting: THT
Pulsed drain current: 177A
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| ESDCAN01-2BLY |
Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 25÷30V; 5.5A; bidirectional; ESD; SOT23; Ch: 2
Version: ESD
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Case: SOT23
Capacitance: 30pF
Type of diode: TVS array
Number of channels: 2
Mounting: SMD
Breakdown voltage: 25...30V
Max. forward impulse current: 5.5A
Application: automotive industry
Max. off-state voltage: 24V
Category: Protection diodes - arrays
Description: Diode: TVS array; 25÷30V; 5.5A; bidirectional; ESD; SOT23; Ch: 2
Version: ESD
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Case: SOT23
Capacitance: 30pF
Type of diode: TVS array
Number of channels: 2
Mounting: SMD
Breakdown voltage: 25...30V
Max. forward impulse current: 5.5A
Application: automotive industry
Max. off-state voltage: 24V
на замовлення 1773 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.71 грн |
| 49+ | 8.62 грн |
| 55+ | 7.74 грн |
| 100+ | 6.59 грн |
| 250+ | 6.31 грн |
| 500+ | 5.97 грн |
| 1000+ | 5.24 грн |
| STP46N60M6 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 126A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 126A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 126A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 126A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
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| SMAJ20A-TR |
|
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2V; 54A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Leakage current: 1µA
Breakdown voltage: 22.2V
Manufacturer series: SMAJ
Max. forward impulse current: 54A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2V; 54A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.4kW
Leakage current: 1µA
Breakdown voltage: 22.2V
Manufacturer series: SMAJ
Max. forward impulse current: 54A
на замовлення 8453 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.43 грн |
| 24+ | 17.74 грн |
| 27+ | 15.90 грн |
| 100+ | 11.13 грн |
| 250+ | 9.96 грн |
| 500+ | 9.29 грн |
| 1000+ | 8.70 грн |
| 2000+ | 8.12 грн |
| 5000+ | 7.61 грн |
| STM32F378RCT6 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 1.8VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; PoR; watchdog
Memory: 32kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 3
Family: STM32F3
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 1.8VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; PoR; watchdog
Memory: 32kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 3
Family: STM32F3
Kind of core: 32-bit
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| STM32F378VCT6 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 1.8VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.8V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; PoR; watchdog
Memory: 32kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 3
Family: STM32F3
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 1.8VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.8V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; PoR; watchdog
Memory: 32kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 3
Family: STM32F3
Kind of core: 32-bit
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| VIPER26HD |
|
Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 3A; 800V; Uin: 11.5÷23.5V; 115kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output current: 3A
Output voltage: 800V
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 115kHz
Kind of package: tube
Input voltage: 11.5...23.5V
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 3A; 800V; Uin: 11.5÷23.5V; 115kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output current: 3A
Output voltage: 800V
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 115kHz
Kind of package: tube
Input voltage: 11.5...23.5V
товару немає в наявності
Мінімальне замовлення: 50 шт
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| VIPER28HN |
|
Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
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Мінімальне замовлення: 50 шт
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| VIPER28LD |
|
Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 1.2A; 1.5W; 8.5÷23.5V; 60kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output current: 1.2A
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 60kHz
Input voltage: 8.5...23.5V
DC supply current: 2.5mA
Power: 1.5W
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 1.2A; 1.5W; 8.5÷23.5V; 60kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output current: 1.2A
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 60kHz
Input voltage: 8.5...23.5V
DC supply current: 2.5mA
Power: 1.5W
на замовлення 1500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 45.60 грн |
| VIPER38HD |
|
Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 800V; Uin: 8.5÷23.5V; 115kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output voltage: 800V
Mounting: SMD
Operating temperature: -40...150°C
Input voltage: 8.5...23.5V
Frequency: 115kHz
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; SO16; 800V; Uin: 8.5÷23.5V; 115kHz
Type of integrated circuit: driver
Topology: flyback
Case: SO16
Output voltage: 800V
Mounting: SMD
Operating temperature: -40...150°C
Input voltage: 8.5...23.5V
Frequency: 115kHz
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| VIPER318LDTR |
|
Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 800V; 60kHz; SO16; boost,buck,buck-boost,flyback
Type of integrated circuit: PMIC
Output voltage: 800V
Frequency: 60kHz
Case: SO16
Mounting: SMD
Operating temperature: -40...150°C
Topology: boost; buck; buck-boost; flyback
Integrated circuit features: PWM
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 800V; 60kHz; SO16; boost,buck,buck-boost,flyback
Type of integrated circuit: PMIC
Output voltage: 800V
Frequency: 60kHz
Case: SO16
Mounting: SMD
Operating temperature: -40...150°C
Topology: boost; buck; buck-boost; flyback
Integrated circuit features: PWM
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 15V; 132kHz; SO16; boost,buck,buck-boost,flyback
Type of integrated circuit: PMIC
Output voltage: 15V
Frequency: 132kHz
Case: SO16
Mounting: SMD
Operating temperature: -40...150°C
Topology: boost; buck; buck-boost; flyback
Input voltage: 4.5...30V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 15V; 132kHz; SO16; boost,buck,buck-boost,flyback
Type of integrated circuit: PMIC
Output voltage: 15V
Frequency: 132kHz
Case: SO16
Mounting: SMD
Operating temperature: -40...150°C
Topology: boost; buck; buck-boost; flyback
Input voltage: 4.5...30V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.