Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (164677) > Сторінка 2648 з 2745
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TDA7561 | STMicroelectronics |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; 400kHz; Pout: 60W; I2C; stereo; 8÷18VDC; Ch: 4 Type of integrated circuit: audio amplifier Output power: 60W Interface: I2C Mounting: THT Supply voltage: 8...18V DC Number of channels: 4 Amplifier class: AB Case: FLEXIWATT25 Impedance: 2Ω Integrated circuit features: stereo Frequency: 400kHz |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| TDA7564B | STMicroelectronics |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 72W; I2C; 8÷18VDC; Ch: 4; Amp.class: AB Type of integrated circuit: audio amplifier Output power: 72W Interface: I2C Mounting: THT Supply voltage: 8...18V DC Number of channels: 4 Amplifier class: AB Case: FLEXIWATT25 Impedance: 2Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
TDA7575B | STMicroelectronics |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 75W; I2C; 8÷18VDC; Ch: 2; Amp.class: AB Case: FLEXIWATT27 Interface: I2C Mounting: THT Number of channels: 2 Impedance: 2Ω Supply voltage: 8...18V DC Output power: 75W Amplifier class: AB Type of integrated circuit: audio amplifier |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
![]() +1 |
TDA7850 | STMicroelectronics |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 80W; MOSFET,rail-to-rail output; Ch: 4 Type of integrated circuit: audio amplifier Output power: 80W Integrated circuit features: MOSFET; rail-to-rail output Mounting: THT Supply voltage: 8...18V DC Number of channels: 4 Amplifier class: AB Case: FLEXIWATT25 Impedance: 2Ω |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| M24C16-FDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| M24C16-FMC5TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -20...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| M24C16-FMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -20...85°C |
на замовлення 4149 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
| M24C16-FMH6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN5 Kind of interface: serial Operating temperature: -20...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
M24C16-FMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| M24C16-RDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| M24C16-RMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
M24C16-RMN6P | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
M24C16-RMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
на замовлення 11312 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
M24C16-WMN6P | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: SO8 Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
M24C16-WMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: SO8 Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
STB13N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 969 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| STD13N60DM2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.365Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
STD13N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1726 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
STF13N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.365Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
STF13N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 167 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
STF33N60DM6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A; 35W Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 80A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 128mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
STF33N60M6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Pulsed drain current: 78A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.125Ω Mounting: THT Gate charge: 33.4nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
STP13N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
на замовлення 139 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
1.5KE440CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 440V; 3.5A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 376V Breakdown voltage: 440V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
на замовлення 1383 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| LM2904AHYPT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; TSSOP8; 3÷30VDC; IB: 0.2uA Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Mounting: SMT Number of channels: 2 Case: TSSOP8 Slew rate: 0.6V/μs Operating temperature: -40...150°C Input offset voltage: 6mV Voltage supply range: 3...30V DC Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
LM2904AYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; 3÷30VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 0.6V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Voltage supply range: 3...30V DC Integrated circuit features: low power Kind of package: reel; tape |
на замовлення 50131 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
BTA25-600B | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 25A; RD91; Igt: 50mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: RD91 Gate current: 50mA Mounting: THT Kind of package: bulk |
на замовлення 131 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
BTA41-600BRG | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 41A; TOP3; Igt: 50mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 41A Case: TOP3 Gate current: 50mA Mounting: THT Kind of package: tube |
на замовлення 1005 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
BTA41-700BRG | STMicroelectronics |
Category: TriacsDescription: Triac; 700V; 41A; TOP3; Igt: 50mA Type of thyristor: triac Max. off-state voltage: 700V Max. load current: 41A Case: TOP3 Gate current: 50mA Mounting: THT Kind of package: tube |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
1N5822RL | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.475V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.475V Max. forward impulse current: 80A Kind of package: reel Max. load current: 10A |
на замовлення 8592 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
1.5KE400ARL | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 400V; 4A; unidirectional; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 4A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: reel; tape |
на замовлення 699 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
LM358D | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; tube Voltage supply range: 3...30V DC Bandwidth: 1.1MHz Case: SO8 Number of channels: 2 Integrated circuit features: low power Type of integrated circuit: operational amplifier Kind of package: tube Mounting: SMT Operating temperature: 0...70°C Slew rate: 0.6V/μs |
на замовлення 10125 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
LM358DT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; reel,tape Voltage supply range: 3...30V DC Bandwidth: 1.1MHz Case: SO8 Number of channels: 2 Integrated circuit features: low power Type of integrated circuit: operational amplifier Kind of package: reel; tape Mounting: SMT Operating temperature: 0...70°C Slew rate: 0.6V/μs |
на замовлення 95419 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
P6KE200A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack Tolerance: ±5% |
на замовлення 757 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
LM234DT | STMicroelectronics |
Category: Integrated circuits - othersDescription: IC: current source; SO8; -25÷100°C; reel,tape; 1÷40V; ±3% Type of integrated circuit: current source Case: SO8 Mounting: SMD Operating temperature: -25...100°C Output current: 10mA Operating voltage: 1...40V Tolerance: ±3% Kind of package: reel; tape |
на замовлення 2979 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
1.5KE400CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 400V; 4A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 4A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Kind of package: Ammo Pack Leakage current: 1µA |
на замовлення 672 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
1N5819RL | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V; reel Case: DO41 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.55V Load current: 1A Max. forward impulse current: 25A Max. load current: 10A Max. off-state voltage: 40V Kind of package: reel |
на замовлення 1282 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
USBLC6-2P6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; bidirectional; SOT666; Ch: 2; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6V Semiconductor structure: bidirectional Mounting: SMD Case: SOT666 Max. off-state voltage: 5V Number of channels: 2 Kind of package: reel; tape Application: Ethernet; USB Version: ESD Leakage current: 10nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
P6KE15CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Peak pulse power dissipation: 0.6kW Kind of package: Ammo Pack |
на замовлення 434 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| STM3240G-EVAL | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; TFT display; Comp: STM32F407IGH6 Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB Interface: CAN 2.0A/B; Ethernet; I2C; I2S; JTAG; Smart Card; USB OTG Type of development kit: STM32 Components: STM32F407IGH6 Kind of architecture: Cortex M4 Kit contents: TFT display |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32429I-EVAL1 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; TFT display; Comp: STM32F429NIH6 Type of development kit: STM32 Kit contents: TFT display Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB Kind of architecture: Cortex M4 Components: STM32F429NIH6 Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32439I-EVAL2 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; TFT display; Comp: STM32F439NIH6 Type of development kit: STM32 Kit contents: TFT display Components: STM32F439NIH6 Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB Kind of architecture: Cortex M4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
T1235H-6G | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Features of semiconductor devices: high temperature Mounting: SMD Kind of package: tube |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
T1235H-6G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Features of semiconductor devices: high temperature Mounting: SMD Kind of package: reel; tape |
на замовлення 787 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
T1235H-6T | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 35mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35mA Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube Technology: Snubberless™ |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
ULN2804A | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: driver; darlington,transistor array; DIP18; 0.5A; 50V; Ch: 8 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: DIP18 Mounting: THT Operating temperature: -20...85°C Output current: 0.5A Number of channels: 8 Output voltage: 50V Input voltage: 30V Application: 6-15V PMOS/CMOS; for inductive load |
на замовлення 1210 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
Z0107MA 1AA2 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 8A Mounting: THT Kind of package: bulk |
на замовлення 1600 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
Z0107MA 5AL2 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 8A Mounting: THT Kind of package: tape |
на замовлення 2002 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
Z0107MN 5AA4 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; SOT223; Igt: 5mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 5mA Max. forward impulse current: 8A Mounting: SMD Kind of package: reel; tape |
на замовлення 4142 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
Z0107MN 6AA4 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; SOT223; Igt: 5mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 5mA Max. forward impulse current: 8A Mounting: SMD Kind of package: reel; tape |
на замовлення 2533 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| STB45N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Drain current: 22A Pulsed drain current: 140A Power dissipation: 210W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 78mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
STF35N65DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 90A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 56.3nC Kind of package: tube Kind of channel: enhancement |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
STF45N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 40W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| STP35N65DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 90A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 56.3nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
STP45N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 210W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
UC2842BD1 | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -25...85°C Topology: boost; flyback Operating voltage: 10...36V Supply voltage: 16...36V Duty cycle factor: 0...96% Kind of package: tube Power: 0.8W |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
UC2842BD1013TR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -25...85°C Topology: boost; flyback Operating voltage: 10...36V Supply voltage: 16...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 0.8W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
UC2842BN | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; MiniDIP8; 0÷96%; tube Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: MiniDIP8 Mounting: THT Operating temperature: -25...85°C Topology: boost; flyback Operating voltage: 10...36V Supply voltage: 16...36V Duty cycle factor: 0...96% Kind of package: tube Power: 1.25W |
на замовлення 196 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
P6KE30A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack |
на замовлення 283 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
STP24NF10 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 18A; 85W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
|
| TDA7561 |
![]() |
Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 400kHz; Pout: 60W; I2C; stereo; 8÷18VDC; Ch: 4
Type of integrated circuit: audio amplifier
Output power: 60W
Interface: I2C
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
Integrated circuit features: stereo
Frequency: 400kHz
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 400kHz; Pout: 60W; I2C; stereo; 8÷18VDC; Ch: 4
Type of integrated circuit: audio amplifier
Output power: 60W
Interface: I2C
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
Integrated circuit features: stereo
Frequency: 400kHz
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 613.72 грн |
| 10+ | 493.95 грн |
| TDA7564B |
![]() |
Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 72W; I2C; 8÷18VDC; Ch: 4; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 72W
Interface: I2C
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 72W; I2C; 8÷18VDC; Ch: 4; Amp.class: AB
Type of integrated circuit: audio amplifier
Output power: 72W
Interface: I2C
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
товару немає в наявності
В кошику
од. на суму грн.
| TDA7575B |
![]() |
Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 75W; I2C; 8÷18VDC; Ch: 2; Amp.class: AB
Case: FLEXIWATT27
Interface: I2C
Mounting: THT
Number of channels: 2
Impedance: 2Ω
Supply voltage: 8...18V DC
Output power: 75W
Amplifier class: AB
Type of integrated circuit: audio amplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 75W; I2C; 8÷18VDC; Ch: 2; Amp.class: AB
Case: FLEXIWATT27
Interface: I2C
Mounting: THT
Number of channels: 2
Impedance: 2Ω
Supply voltage: 8...18V DC
Output power: 75W
Amplifier class: AB
Type of integrated circuit: audio amplifier
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 570.68 грн |
| TDA7850 |
![]() |
Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80W; MOSFET,rail-to-rail output; Ch: 4
Type of integrated circuit: audio amplifier
Output power: 80W
Integrated circuit features: MOSFET; rail-to-rail output
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80W; MOSFET,rail-to-rail output; Ch: 4
Type of integrated circuit: audio amplifier
Output power: 80W
Integrated circuit features: MOSFET; rail-to-rail output
Mounting: THT
Supply voltage: 8...18V DC
Number of channels: 4
Amplifier class: AB
Case: FLEXIWATT25
Impedance: 2Ω
на замовлення 35 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 635.24 грн |
| 3+ | 524.32 грн |
| 10+ | 461.18 грн |
| 17+ | 435.60 грн |
| 34+ | 406.03 грн |
| M24C16-FDW6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M24C16-FMC5TG |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -20...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -20...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M24C16-FMC6TG |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -20...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -20...85°C
на замовлення 4149 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.22 грн |
| 27+ | 14.95 грн |
| 250+ | 13.75 грн |
| M24C16-FMH6TG |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -20...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -20...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M24C16-FMN6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M24C16-RDW6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M24C16-RMC6TG |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M24C16-RMN6P |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M24C16-RMN6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
на замовлення 11312 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.49 грн |
| 31+ | 12.95 грн |
| 100+ | 11.19 грн |
| 500+ | 10.23 грн |
| 1000+ | 9.11 грн |
| 2500+ | 8.23 грн |
| M24C16-WMN6P | ![]() |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
товару немає в наявності
В кошику
од. на суму грн.
| M24C16-WMN6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
товару немає в наявності
В кошику
од. на суму грн.
| STB13N60M2 |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 969 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 172.15 грн |
| 10+ | 116.69 грн |
| 25+ | 100.71 грн |
| 50+ | 90.32 грн |
| STD13N60DM2 |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 44A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| STD13N60M2 |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1726 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 133.42 грн |
| 10+ | 102.31 грн |
| 100+ | 82.33 грн |
| 250+ | 75.93 грн |
| STF13N60DM2 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 135.14 грн |
| 10+ | 86.32 грн |
| 25+ | 79.13 грн |
| 50+ | 73.53 грн |
| STF13N60M2 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 7A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 167 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 103.29 грн |
| 10+ | 63.94 грн |
| 25+ | 62.34 грн |
| STF33N60DM6 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A; 35W
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 80A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 128mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A; 35W
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 80A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 128mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STF33N60M6 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 78A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STP13N60M2 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 139 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 97.27 грн |
| 10+ | 60.50 грн |
| 50+ | 53.47 грн |
| 100+ | 50.67 грн |
| 1.5KE440CA |
![]() |
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 440V; 3.5A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 440V; 3.5A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
на замовлення 1383 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.05 грн |
| 10+ | 60.98 грн |
| 25+ | 52.99 грн |
| 50+ | 47.32 грн |
| 100+ | 42.28 грн |
| 125+ | 40.84 грн |
| 250+ | 36.85 грн |
| 600+ | 32.85 грн |
| 1200+ | 30.29 грн |
| LM2904AHYPT |
![]() |
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; TSSOP8; 3÷30VDC; IB: 0.2uA
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 0.6V/μs
Operating temperature: -40...150°C
Input offset voltage: 6mV
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; TSSOP8; 3÷30VDC; IB: 0.2uA
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 0.6V/μs
Operating temperature: -40...150°C
Input offset voltage: 6mV
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| LM2904AYDT |
![]() |
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; 3÷30VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; 3÷30VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel; tape
на замовлення 50131 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.05 грн |
| 43+ | 9.35 грн |
| 49+ | 8.31 грн |
| 55+ | 7.35 грн |
| 100+ | 6.71 грн |
| 250+ | 6.07 грн |
| 500+ | 5.75 грн |
| 1000+ | 5.59 грн |
| 2500+ | 5.44 грн |
| BTA25-600B | ![]() |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 25A; RD91; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: RD91
Gate current: 50mA
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 25A; RD91; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: RD91
Gate current: 50mA
Mounting: THT
Kind of package: bulk
на замовлення 131 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 553.47 грн |
| 2+ | 465.98 грн |
| 3+ | 446.79 грн |
| BTA41-600BRG | ![]() |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 41A; TOP3; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 41A
Case: TOP3
Gate current: 50mA
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 41A; TOP3; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 41A
Case: TOP3
Gate current: 50mA
Mounting: THT
Kind of package: tube
на замовлення 1005 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 220.35 грн |
| 3+ | 193.42 грн |
| 5+ | 183.03 грн |
| 10+ | 167.05 грн |
| BTA41-700BRG | ![]() |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 700V; 41A; TOP3; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 41A
Case: TOP3
Gate current: 50mA
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 700V; 41A; TOP3; Igt: 50mA
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 41A
Case: TOP3
Gate current: 50mA
Mounting: THT
Kind of package: tube
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 381.31 грн |
| 5+ | 311.72 грн |
| 10+ | 288.54 грн |
| 1N5822RL |
![]() |
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.475V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.475V
Max. forward impulse current: 80A
Kind of package: reel
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.475V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.475V
Max. forward impulse current: 80A
Kind of package: reel
Max. load current: 10A
на замовлення 8592 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.91 грн |
| 37+ | 10.95 грн |
| 100+ | 9.03 грн |
| 200+ | 8.39 грн |
| 500+ | 7.51 грн |
| 1000+ | 6.79 грн |
| 1900+ | 6.15 грн |
| 3800+ | 5.44 грн |
| 1.5KE400ARL |
![]() |
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 4A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 4A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 699 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.28 грн |
| 10+ | 53.71 грн |
| 25+ | 49.87 грн |
| 100+ | 39.88 грн |
| 250+ | 36.05 грн |
| 600+ | 32.21 грн |
| LM358D |
![]() |
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; tube
Voltage supply range: 3...30V DC
Bandwidth: 1.1MHz
Case: SO8
Number of channels: 2
Integrated circuit features: low power
Type of integrated circuit: operational amplifier
Kind of package: tube
Mounting: SMT
Operating temperature: 0...70°C
Slew rate: 0.6V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; tube
Voltage supply range: 3...30V DC
Bandwidth: 1.1MHz
Case: SO8
Number of channels: 2
Integrated circuit features: low power
Type of integrated circuit: operational amplifier
Kind of package: tube
Mounting: SMT
Operating temperature: 0...70°C
Slew rate: 0.6V/μs
на замовлення 10125 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.22 грн |
| 30+ | 13.43 грн |
| 100+ | 7.99 грн |
| 500+ | 7.19 грн |
| 1000+ | 6.71 грн |
| 2500+ | 6.39 грн |
| 10000+ | 5.75 грн |
| LM358DT |
![]() |
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; reel,tape
Voltage supply range: 3...30V DC
Bandwidth: 1.1MHz
Case: SO8
Number of channels: 2
Integrated circuit features: low power
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: 0...70°C
Slew rate: 0.6V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; 3÷30VDC; SO8; reel,tape
Voltage supply range: 3...30V DC
Bandwidth: 1.1MHz
Case: SO8
Number of channels: 2
Integrated circuit features: low power
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: 0...70°C
Slew rate: 0.6V/μs
на замовлення 95419 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.05 грн |
| 54+ | 7.51 грн |
| 64+ | 6.31 грн |
| 100+ | 5.44 грн |
| 250+ | 5.12 грн |
| 500+ | 4.96 грн |
| 1000+ | 4.72 грн |
| 2500+ | 4.32 грн |
| P6KE200A |
![]() |
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Tolerance: ±5%
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Tolerance: ±5%
на замовлення 757 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.43 грн |
| 14+ | 28.77 грн |
| 15+ | 26.94 грн |
| 25+ | 24.30 грн |
| 100+ | 19.82 грн |
| 500+ | 14.63 грн |
| LM234DT |
![]() |
Виробник: STMicroelectronics
Category: Integrated circuits - others
Description: IC: current source; SO8; -25÷100°C; reel,tape; 1÷40V; ±3%
Type of integrated circuit: current source
Case: SO8
Mounting: SMD
Operating temperature: -25...100°C
Output current: 10mA
Operating voltage: 1...40V
Tolerance: ±3%
Kind of package: reel; tape
Category: Integrated circuits - others
Description: IC: current source; SO8; -25÷100°C; reel,tape; 1÷40V; ±3%
Type of integrated circuit: current source
Case: SO8
Mounting: SMD
Operating temperature: -25...100°C
Output current: 10mA
Operating voltage: 1...40V
Tolerance: ±3%
Kind of package: reel; tape
на замовлення 2979 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.00 грн |
| 10+ | 47.16 грн |
| 25+ | 42.36 грн |
| 50+ | 39.96 грн |
| 100+ | 38.37 грн |
| 250+ | 35.17 грн |
| 500+ | 34.37 грн |
| 2500+ | 32.77 грн |
| 1.5KE400CA |
![]() |
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 4A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Kind of package: Ammo Pack
Leakage current: 1µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 4A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Kind of package: Ammo Pack
Leakage current: 1µA
на замовлення 672 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.81 грн |
| 10+ | 44.20 грн |
| 50+ | 39.16 грн |
| 100+ | 36.93 грн |
| 250+ | 34.05 грн |
| 500+ | 31.89 грн |
| 600+ | 31.33 грн |
| 1N5819RL | ![]() |
![]() |
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V; reel
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 25A
Max. load current: 10A
Max. off-state voltage: 40V
Kind of package: reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V; reel
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 25A
Max. load current: 10A
Max. off-state voltage: 40V
Kind of package: reel
на замовлення 1282 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.63 грн |
| 41+ | 9.83 грн |
| 46+ | 8.79 грн |
| 100+ | 6.73 грн |
| 500+ | 5.04 грн |
| 1000+ | 4.42 грн |
| USBLC6-2P6 | ![]() |
![]() |
Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT666; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT666
Max. off-state voltage: 5V
Number of channels: 2
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
Leakage current: 10nA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; SOT666; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT666
Max. off-state voltage: 5V
Number of channels: 2
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
Leakage current: 10nA
товару немає в наявності
В кошику
од. на суму грн.
| P6KE15CA |
![]() |
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
на замовлення 434 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.32 грн |
| 13+ | 31.81 грн |
| 15+ | 28.37 грн |
| 100+ | 18.46 грн |
| STM3240G-EVAL |
![]() |
Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F407IGH6
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Interface: CAN 2.0A/B; Ethernet; I2C; I2S; JTAG; Smart Card; USB OTG
Type of development kit: STM32
Components: STM32F407IGH6
Kind of architecture: Cortex M4
Kit contents: TFT display
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F407IGH6
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Interface: CAN 2.0A/B; Ethernet; I2C; I2S; JTAG; Smart Card; USB OTG
Type of development kit: STM32
Components: STM32F407IGH6
Kind of architecture: Cortex M4
Kit contents: TFT display
товару немає в наявності
В кошику
од. на суму грн.
| STM32429I-EVAL1 |
![]() |
Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F429NIH6
Type of development kit: STM32
Kit contents: TFT display
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
Components: STM32F429NIH6
Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F429NIH6
Type of development kit: STM32
Kit contents: TFT display
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
Components: STM32F429NIH6
Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG
товару немає в наявності
В кошику
од. на суму грн.
| STM32439I-EVAL2 |
![]() |
Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F439NIH6
Type of development kit: STM32
Kit contents: TFT display
Components: STM32F439NIH6
Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
Category: STM development kits
Description: Dev.kit: STM32; TFT display; Comp: STM32F439NIH6
Type of development kit: STM32
Kit contents: TFT display
Components: STM32F439NIH6
Interface: CAN 2.0A/B; Ethernet; FMC; I2C x3; I2S x2; JTAG; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of connector: Jack 3,5mm; microSD; pin strips; RJ45; RS232; USB
Kind of architecture: Cortex M4
товару немає в наявності
В кошику
од. на суму грн.
| T1235H-6G |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.48 грн |
| 10+ | 63.14 грн |
| T1235H-6G-TR |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
на замовлення 787 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 96.40 грн |
| 10+ | 75.13 грн |
| 100+ | 61.54 грн |
| T1235H-6T |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Technology: Snubberless™
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 141.16 грн |
| 5+ | 94.31 грн |
| 10+ | 77.53 грн |
| ULN2804A |
![]() |
Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP18; 0.5A; 50V; Ch: 8
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP18
Mounting: THT
Operating temperature: -20...85°C
Output current: 0.5A
Number of channels: 8
Output voltage: 50V
Input voltage: 30V
Application: 6-15V PMOS/CMOS; for inductive load
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP18; 0.5A; 50V; Ch: 8
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP18
Mounting: THT
Operating temperature: -20...85°C
Output current: 0.5A
Number of channels: 8
Output voltage: 50V
Input voltage: 30V
Application: 6-15V PMOS/CMOS; for inductive load
на замовлення 1210 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 126.53 грн |
| 10+ | 83.12 грн |
| 20+ | 76.73 грн |
| 40+ | 72.73 грн |
| Z0107MA 1AA2 |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: bulk
на замовлення 1600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.22 грн |
| 33+ | 12.39 грн |
| 100+ | 8.15 грн |
| 125+ | 7.83 грн |
| 250+ | 6.79 грн |
| 500+ | 6.07 грн |
| 625+ | 5.83 грн |
| 1000+ | 5.36 грн |
| Z0107MA 5AL2 |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: tape
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: tape
на замовлення 2002 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.46 грн |
| 14+ | 28.85 грн |
| 100+ | 14.87 грн |
| 500+ | 9.03 грн |
| 1000+ | 7.59 грн |
| 2000+ | 6.39 грн |
| Z0107MN 5AA4 |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 8A
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 8A
Mounting: SMD
Kind of package: reel; tape
на замовлення 4142 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.40 грн |
| 21+ | 19.74 грн |
| 50+ | 14.31 грн |
| 100+ | 12.47 грн |
| 500+ | 9.11 грн |
| 1000+ | 8.15 грн |
| 2000+ | 7.91 грн |
| Z0107MN 6AA4 |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 8A
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 8A
Mounting: SMD
Kind of package: reel; tape
на замовлення 2533 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.54 грн |
| 20+ | 19.98 грн |
| 100+ | 14.31 грн |
| 500+ | 10.39 грн |
| 1000+ | 8.79 грн |
| 2000+ | 8.47 грн |
| STB45N65M5 |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 210W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 210W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STF35N65DM2 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 461.37 грн |
| 3+ | 385.25 грн |
| 10+ | 340.49 грн |
| 50+ | 306.12 грн |
| STF45N65M5 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 40W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 40W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 82 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 511.29 грн |
| 5+ | 398.04 грн |
| STP35N65DM2 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STP45N65M5 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 93 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 532.81 грн |
| 5+ | 399.64 грн |
| 10+ | 382.05 грн |
| UC2842BD1 |
![]() |
Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Operating voltage: 10...36V
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 0.8W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Operating voltage: 10...36V
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 0.8W
на замовлення 35 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.92 грн |
| UC2842BD1013TR |
![]() |
Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Operating voltage: 10...36V
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 0.8W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -25...85°C
Topology: boost; flyback
Operating voltage: 10...36V
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 0.8W
товару немає в наявності
В кошику
од. на суму грн.
| UC2842BN |
![]() |
Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; MiniDIP8; 0÷96%; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: MiniDIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: boost; flyback
Operating voltage: 10...36V
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 1.25W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; MiniDIP8; 0÷96%; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: MiniDIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: boost; flyback
Operating voltage: 10...36V
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 1.25W
на замовлення 196 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.11 грн |
| 10+ | 40.28 грн |
| 25+ | 35.49 грн |
| 100+ | 31.17 грн |
| P6KE30A |
![]() |
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
на замовлення 283 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.27 грн |
| 18+ | 22.22 грн |
| 21+ | 19.90 грн |
| 50+ | 15.35 грн |
| 100+ | 13.83 грн |
| 250+ | 12.07 грн |
| STP24NF10 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 18A; 85W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 18A; 85W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.48 грн |
| 6+ | 77.37 грн |






























