Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (165488) > Сторінка 2711 з 2759
| Фото | Назва | Виробник | Інформація |
Доступність |
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| L6599ATD | STMicroelectronics |
Category: UnclassifiedDescription: L6599ATD |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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LMV824AIDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 5.5MHz; Ch: 4; SO14; 2.5÷5.5VDC Type of integrated circuit: operational amplifier Bandwidth: 5.5MHz Mounting: SMT Number of channels: 4 Case: SO14 Operating temperature: -40...125°C Input offset voltage: 2mV Integrated circuit features: low power; rail-to-rail Input bias current: 0.18µA Input offset current: 50nA Kind of package: reel; tape Slew rate: 1.9V/μs Voltage supply range: 2.5...5.5V DC |
на замовлення 2486 шт: термін постачання 21-30 дні (днів) |
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LMV824AIPT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 5.5MHz; Ch: 4; TSSOP14; 2.5÷5.5VDC Type of integrated circuit: operational amplifier Bandwidth: 5.5MHz Mounting: SMT Number of channels: 4 Case: TSSOP14 Operating temperature: -40...125°C Input offset voltage: 2mV Integrated circuit features: low power; rail-to-rail Input bias current: 0.18µA Input offset current: 50nA Kind of package: reel; tape Slew rate: 1.9V/μs Voltage supply range: 2.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LMV824AIYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 5.5MHz; Ch: 4; SO14; 2.5÷5.5VDC Type of integrated circuit: operational amplifier Bandwidth: 5.5MHz Mounting: SMT Number of channels: 4 Case: SO14 Operating temperature: -40...125°C Input offset voltage: 2mV Integrated circuit features: low power; rail-to-rail Input bias current: 0.18µA Application: automotive industry Input offset current: 50nA Kind of package: reel; tape Slew rate: 1.9V/μs Voltage supply range: 2.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LMV824AIYPT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 5.5MHz; Ch: 4; TSSOP14; 2.5÷5.5VDC Type of integrated circuit: operational amplifier Bandwidth: 5.5MHz Mounting: SMT Number of channels: 4 Case: TSSOP14 Operating temperature: -40...125°C Input offset voltage: 2mV Integrated circuit features: low power; rail-to-rail Input bias current: 0.18µA Application: automotive industry Input offset current: 50nA Kind of package: reel; tape Slew rate: 1.9V/μs Voltage supply range: 2.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LMV824IDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 5.5MHz; Ch: 4; SO14; 2.5÷5.5VDC Type of integrated circuit: operational amplifier Bandwidth: 5.5MHz Mounting: SMT Number of channels: 4 Case: SO14 Operating temperature: -40...125°C Input offset voltage: 4mV Integrated circuit features: rail-to-rail Input bias current: 0.18µA Input offset current: 50nA Kind of package: reel; tape Slew rate: 1.7V/μs Voltage supply range: 2.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LMV824IPT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 5.5MHz; Ch: 4; TSSOP14; 2.5÷5.5VDC Type of integrated circuit: operational amplifier Bandwidth: 5.5MHz Mounting: SMT Number of channels: 4 Case: TSSOP14 Operating temperature: -40...125°C Input offset voltage: 4mV Integrated circuit features: low power; rail-to-rail Input bias current: 0.18µA Input offset current: 50nA Kind of package: reel; tape Slew rate: 1.9V/μs Voltage supply range: 2.5...5.5V DC |
на замовлення 2185 шт: термін постачання 21-30 дні (днів) |
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LMV824IYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 5.5MHz; Ch: 4; SO14; 2.5÷5.5VDC Type of integrated circuit: operational amplifier Bandwidth: 5.5MHz Mounting: SMT Number of channels: 4 Case: SO14 Operating temperature: -40...125°C Input offset voltage: 4mV Integrated circuit features: low power; rail-to-rail Input bias current: 0.18µA Application: automotive industry Input offset current: 50nA Kind of package: reel; tape Slew rate: 1.9V/μs Voltage supply range: 2.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STGF10NC60KD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 6A; 25W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 25W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 19nC Kind of package: tube |
на замовлення 416 шт: термін постачання 21-30 дні (днів) |
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| STUSB1602AQTR | STMicroelectronics |
Category: USB interfaces - integrated circuitsDescription: IC: interface Type of integrated circuit: interface |
на замовлення 13207 шт: термін постачання 21-30 дні (днів) |
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| ESDA5V3LY | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array Type of diode: TVS array |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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| LSM6DSVQTR | STMicroelectronics |
Category: Unclassified Description: LSM6DSVQTR |
на замовлення 8520 шт: термін постачання 21-30 дні (днів) |
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| E-TDA7384A | STMicroelectronics |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier Type of integrated circuit: audio amplifier |
на замовлення 231 шт: термін постачання 21-30 дні (днів) |
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SM5908 | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 6V; 120A; unidirectional; SMC; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6V Max. forward impulse current: 120A Semiconductor structure: unidirectional Mounting: SMD Leakage current: 0.3mA Kind of package: reel; tape Peak pulse power dissipation: 1.5kW Case: SMC |
на замовлення 6504 шт: термін постачання 21-30 дні (днів) |
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| STM32F723VET6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 216MHz; WLCSP100; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 79 Case: WLCSP100 Supply voltage: 1.7...3.6V DC Interface: CAN; FMC; I2C x3; PHY; QUAD SPI; SAI x 2; SDMMC; SPI x4; UART x4; USART x4; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 256kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Number of 16bit timers: 15 Family: STM32F7 Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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T410-800B-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 4A; DPAK; Igt: 10mA Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: DPAK Gate current: 10mA Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STF80N600K6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| VL53L0CXV0DH/1 | STMicroelectronics |
Category: UnclassifiedDescription: VL53L0CXV0DH/1 |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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SMBJ10CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 11.7V; 37A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 37A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2935 шт: термін постачання 21-30 дні (днів) |
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SMBJ10A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 11.7V; 37A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 37A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2380 шт: термін постачання 21-30 дні (днів) |
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SMBJ100CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 117V; 3.8A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 100V Breakdown voltage: 117V Max. forward impulse current: 3.8A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1774 шт: термін постачання 21-30 дні (днів) |
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PD55003-E | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; RF; 40V; 2.5A; 31.7W; PowerSO10RF Electrical mounting: SMT Polarisation: unipolar Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Kind of transistor: RF Drain current: 2.5A Output power: 3W Open-loop gain: 17dB Gate-source voltage: ±20V Power dissipation: 31.7W Drain-source voltage: 40V Efficiency: 52% Frequency: 500MHz Case: PowerSO10RF |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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STGF19NC60HD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 32W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 32W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 53nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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| BAL-CC1101-01D3 | STMicroelectronics |
Category: PCB transformersDescription: BAL-CC1101-01D3 |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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| SMC30J22CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 25.7V; 85A; bidirectional; SMC; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMC Semiconductor structure: bidirectional Leakage current: 1µA Max. forward impulse current: 85A Max. off-state voltage: 22V Breakdown voltage: 25.7V Peak pulse power dissipation: 3kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMC30J33CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 38.6V; 56A; bidirectional; SMC; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMC Semiconductor structure: bidirectional Leakage current: 0.2µA Max. forward impulse current: 56A Max. off-state voltage: 33V Breakdown voltage: 38.6V Peak pulse power dissipation: 3kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STM32F303RCT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C Kind of architecture: Cortex M4 Type of integrated circuit: STM32 ARM microcontroller Family: STM32F3 Operating temperature: -40...85°C Number of 12bit A/D converters: 22 Number of 12bit D/A converters: 2 Supply voltage: 2...3.6V DC Number of inputs/outputs: 52 Memory: 40kB SRAM; 256kB FLASH Kind of core: 32-bit Clock frequency: 72MHz Interface: CAN; I2C; IrDA; LIN; SPI; USART; USB Integrated circuit features: DMA; PoR; PWM Case: LQFP64 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STPS2200U | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 200V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.58V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 2756 шт: термін постачання 21-30 дні (днів) |
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| CR95HF-VMD5T | STMicroelectronics |
Category: Interfaces others - integrated circuitsDescription: IC: NFC/RFID tag; 2.7÷5.5VDC; SPI,UART; SMD; VFQFPN32; reel,tape Interface: SPI; UART Supply voltage: 2.7...5.5V DC Frequency: 13.56MHz Type of integrated circuit: NFC/RFID tag Case: VFQFPN32 Kind of package: reel; tape Mounting: SMD Operating temperature: -25...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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L5970AD | STMicroelectronics |
Category: Voltage regulators - DC/DC circuitsDescription: Driver; DC/DC converter; Uout: 1.235÷35VDC; 1.5A; SO8; SMD; 500kHz Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Case: SO8 Mounting: SMD Topology: buck Number of channels: 1 Operating temperature: -40...150°C Kind of package: tube Frequency: 0.5MHz Output voltage: 1.235...35V DC Output current: 1.5A Operating voltage: 4.4...36V DC |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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SMBJ18A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 21.1V; 21.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 21.1V Max. forward impulse current: 21.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2219 шт: термін постачання 21-30 дні (днів) |
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STPS10L60CFP | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 5Ax2; TO220FP; Ufmax: 0.67V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.67V Max. load current: 30A Max. forward impulse current: 180A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SM6T27A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 27V; 16A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 23.1V Breakdown voltage: 27V Max. forward impulse current: 16A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2523 шт: термін постачання 21-30 дні (днів) |
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STP140NF75 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ III; unipolar; 75V; 100A; 310W Type of transistor: N-MOSFET Technology: STripFET™ III Polarisation: unipolar Drain-source voltage: 75V Drain current: 100A Power dissipation: 310W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 148 шт: термін постачання 21-30 дні (днів) |
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STP140N6F7 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™; unipolar; 60V; 80A; Idm: 320A; 158W Mounting: THT Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A On-state resistance: 3.5mΩ Power dissipation: 158W Gate-source voltage: ±20V Pulsed drain current: 320A Case: TO220-3 Technology: STripFET™ Kind of channel: enhancement |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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| Z0107MA 2AL2 | STMicroelectronics |
Category: TriacsDescription: Triac Type of thyristor: triac |
на замовлення 8000 шт: термін постачання 21-30 дні (днів) |
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| STH315N10F7-2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| STF16N60M6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 32A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 16.7nC Pulsed drain current: 32A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STEVAL-BFA001V1B | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; programmer,prototype board Type of development kit: STM32 Kit contents: programmer; prototype board Components: HTS221; ISM330DLC; L6362A; LPS22HB; MP34DT05; STM32F469AI Kind of architecture: Cortex M4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ACST410-8FP | STMicroelectronics |
Category: TriacsDescription: ACST410-8FP |
на замовлення 400 шт: термін постачання 21-30 дні (днів) |
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| STP16DPP05XTTR | STMicroelectronics |
Category: LED driversDescription: IC: driver Type of integrated circuit: driver |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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TIP112 | STMicroelectronics |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 2A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Kind of transistor: Darlington |
на замовлення 559 шт: термін постачання 21-30 дні (днів) |
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STF21N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.7A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 179mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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| STL21N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 68A Power dissipation: 125W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STP21N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.7A Pulsed drain current: 68A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 179mΩ Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| VIPER0PLDTR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| STW68N65DM6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Pulsed drain current: 172A Power dissipation: 431W Case: TO247 Gate-source voltage: ±25V On-state resistance: 59mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMCJ5.0A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 6.74V; 171A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.74V Max. forward impulse current: 171A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 2mA Kind of package: reel; tape |
на замовлення 761 шт: термін постачання 21-30 дні (днів) |
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STB140NF75T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 100A; 310W; D2PAK; ESD Case: D2PAK Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Mounting: SMD Technology: SuperMesh™ Polarisation: unipolar On-state resistance: 6.5mΩ Gate-source voltage: ±20V Power dissipation: 310W Drain current: 100A Drain-source voltage: 75V Kind of package: reel; tape |
на замовлення 1059 шт: термін постачання 21-30 дні (днів) |
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| STM32F207ZCT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 114 Case: LQFP144 Supply voltage: 1.8...3.6V DC Interface: CAN; Ethernet; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB Kind of architecture: Cortex M3 Memory: 128kB RAM; 256kB FLASH Operating temperature: -40...85°C Family: STM32F2 Kind of core: 32-bit Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STPS8H100D | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 8A; TO220AC; Ufmax: 0.56V Kind of package: tube Mounting: THT Type of diode: Schottky rectifying Semiconductor structure: single diode Case: TO220AC Heatsink thickness: 1.23...1.32mm Max. forward voltage: 0.56V Load current: 8A Max. load current: 30A Max. off-state voltage: 100V Max. forward impulse current: 250A |
на замовлення 416 шт: термін постачання 21-30 дні (днів) |
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| STM8L052R8T6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; LQFP64; Architecture: STM8; STM8L Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Number of inputs/outputs: 54 Case: LQFP64 Kind of architecture: STM8 Integrated circuit features: Brown Out Detection (BOD); Brown Out Reset (BOR); DMA; internal clock oscillator; PoR; PWM; UART Operating temperature: -40...85°C Number of 16bit timers: 5 Family: STM8L Kind of core: 8-bit |
на замовлення 120370 шт: термін постачання 21-30 дні (днів) |
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SMBJ6.0CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 7.05V; 61A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 7.05V Max. forward impulse current: 61A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 50µA Kind of package: reel; tape |
на замовлення 1305 шт: термін постачання 21-30 дні (днів) |
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X-NUCLEO-IKA01A1 | STMicroelectronics |
Category: Add-on boardsDescription: Expansion board; Comp: TSU104,TSZ124 Type of accessories for development kits: expansion board Components: TSU104; TSZ124 Associated circuits: STM32 Interface: GPIO Kind of connector: pin strips development kits accessories features: operational amplifier |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TSZ124IPT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 400kHz; Ch: 4; TSSOP14; 1.8÷5.5VDC Integrated circuit features: micropower; rail-to-rail; zero-drift Type of integrated circuit: operational amplifier Case: TSSOP14 Kind of package: reel; tape Operating temperature: -40...125°C Input bias current: 0.3nA Input offset current: 0.6nA Input offset voltage: 8µV Quiescent current: 40µA Slew rate: 0.19V/μs Voltage supply range: 1.8...5.5V DC Number of channels: 4 Bandwidth: 400kHz Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TSZ124IQ4T | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 400kHz; Ch: 4; QFN16; 1.8÷5.5VDC Integrated circuit features: micropower; rail-to-rail; zero-drift Type of integrated circuit: operational amplifier Case: QFN16 Kind of package: reel; tape Operating temperature: -40...125°C Input bias current: 0.3nA Input offset current: 0.6nA Input offset voltage: 8µV Quiescent current: 40µA Slew rate: 0.19V/μs Voltage supply range: 1.8...5.5V DC Number of channels: 4 Bandwidth: 400kHz Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TSZ124IYPT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 400kHz; Ch: 4; TSSOP14; 1.8÷5.5VDC Integrated circuit features: micropower; rail-to-rail; zero-drift Type of integrated circuit: operational amplifier Case: TSSOP14 Kind of package: reel; tape Operating temperature: -40...125°C Input bias current: 0.3nA Input offset current: 0.6nA Input offset voltage: 8µV Quiescent current: 40µA Slew rate: 0.19V/μs Voltage supply range: 1.8...5.5V DC Number of channels: 4 Bandwidth: 400kHz Application: automotive industry Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| X-NUCLEO-PLC01A1 | STMicroelectronics |
Category: Add-on boardsDescription: Expansion board; Comp: CLT01-38SQ7,VNI8200XP Type of accessories for development kits: expansion board Components: CLT01-38SQ7; VNI8200XP Associated circuits: STM32 Interface: GPIO Kind of connector: pin strips development kits accessories features: I/O expander |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F103VEH6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LFBGA100; 2÷3.6VDC; STM32F1 Family: STM32F1 Operating temperature: -40...85°C Number of 12bit D/A converters: 2 Supply voltage: 2...3.6V DC Number of 12bit A/D converters: 16 Number of inputs/outputs: 80 Memory: 64kB SRAM; 512kB FLASH Kind of core: 32-bit Clock frequency: 72MHz Interface: CAN; I2C; IrDA; LIN; SPI; USART; USB Kind of architecture: Cortex M3 Integrated circuit features: DMA; internal temperature sensor; PoR; PWM Case: LFBGA100 Mounting: SMD Type of integrated circuit: STM32 ARM microcontroller |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
P6KE30CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 30V; 14.5A; bidirectional; ±5%; DO15; 600W; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack |
на замовлення 525 шт: термін постачання 21-30 дні (днів) |
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| L6599ATD |
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на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 326.81 грн |
| 100+ | 272.72 грн |
| LMV824AIDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; SO14; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Input offset current: 50nA
Kind of package: reel; tape
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; SO14; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Input offset current: 50nA
Kind of package: reel; tape
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
на замовлення 2486 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 73.85 грн |
| 10+ | 44.61 грн |
| 49+ | 19.31 грн |
| 133+ | 18.21 грн |
| LMV824AIPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; TSSOP14; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Input offset current: 50nA
Kind of package: reel; tape
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; TSSOP14; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Input offset current: 50nA
Kind of package: reel; tape
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| LMV824AIYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; SO14; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Application: automotive industry
Input offset current: 50nA
Kind of package: reel; tape
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; SO14; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Application: automotive industry
Input offset current: 50nA
Kind of package: reel; tape
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| LMV824AIYPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; TSSOP14; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Application: automotive industry
Input offset current: 50nA
Kind of package: reel; tape
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; TSSOP14; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 2mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Application: automotive industry
Input offset current: 50nA
Kind of package: reel; tape
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| LMV824IDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; SO14; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: rail-to-rail
Input bias current: 0.18µA
Input offset current: 50nA
Kind of package: reel; tape
Slew rate: 1.7V/μs
Voltage supply range: 2.5...5.5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; SO14; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: rail-to-rail
Input bias current: 0.18µA
Input offset current: 50nA
Kind of package: reel; tape
Slew rate: 1.7V/μs
Voltage supply range: 2.5...5.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| LMV824IPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; TSSOP14; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Input offset current: 50nA
Kind of package: reel; tape
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; TSSOP14; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Input offset current: 50nA
Kind of package: reel; tape
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
на замовлення 2185 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.71 грн |
| 17+ | 23.41 грн |
| 25+ | 22.78 грн |
| 59+ | 15.92 грн |
| 161+ | 15.05 грн |
| LMV824IYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; SO14; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Application: automotive industry
Input offset current: 50nA
Kind of package: reel; tape
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 4; SO14; 2.5÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 4mV
Integrated circuit features: low power; rail-to-rail
Input bias current: 0.18µA
Application: automotive industry
Input offset current: 50nA
Kind of package: reel; tape
Slew rate: 1.9V/μs
Voltage supply range: 2.5...5.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| STGF10NC60KD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
на замовлення 416 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 111.20 грн |
| 5+ | 93.01 грн |
| 10+ | 85.92 грн |
| 50+ | 81.97 грн |
| 150+ | 74.09 грн |
| STUSB1602AQTR |
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Виробник: STMicroelectronics
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
на замовлення 13207 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 96.77 грн |
| ESDA5V3LY |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.54 грн |
| LSM6DSVQTR |
на замовлення 8520 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 196.08 грн |
| E-TDA7384A |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
на замовлення 231 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 157.04 грн |
| SM5908 |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6V; 120A; unidirectional; SMC; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 120A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 0.3mA
Kind of package: reel; tape
Peak pulse power dissipation: 1.5kW
Case: SMC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6V; 120A; unidirectional; SMC; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 120A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 0.3mA
Kind of package: reel; tape
Peak pulse power dissipation: 1.5kW
Case: SMC
на замовлення 6504 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.18 грн |
| 9+ | 45.87 грн |
| 10+ | 43.59 грн |
| 50+ | 39.57 грн |
| 100+ | 38.31 грн |
| 2500+ | 34.21 грн |
| STM32F723VET6 |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; WLCSP100; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 79
Case: WLCSP100
Supply voltage: 1.7...3.6V DC
Interface: CAN; FMC; I2C x3; PHY; QUAD SPI; SAI x 2; SDMMC; SPI x4; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F7
Kind of package: in-tray
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; WLCSP100; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 79
Case: WLCSP100
Supply voltage: 1.7...3.6V DC
Interface: CAN; FMC; I2C x3; PHY; QUAD SPI; SAI x 2; SDMMC; SPI x4; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F7
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
| T410-800B-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| STF80N600K6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 123.08 грн |
| VL53L0CXV0DH/1 |
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на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 235.13 грн |
| SMBJ10CA-TR | ![]() |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.7V; 37A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.7V; 37A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 37A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2935 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.58 грн |
| 39+ | 10.33 грн |
| 41+ | 9.62 грн |
| 50+ | 9.06 грн |
| 100+ | 8.51 грн |
| 125+ | 8.36 грн |
| 500+ | 7.41 грн |
| 650+ | 7.17 грн |
| 1000+ | 6.86 грн |
| SMBJ10A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.7V; 37A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.7V; 37A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2380 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 22.92 грн |
| 23+ | 17.50 грн |
| 25+ | 16.08 грн |
| 50+ | 13.01 грн |
| 100+ | 11.82 грн |
| 202+ | 4.57 грн |
| 556+ | 4.34 грн |
| SMBJ100CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 117V; 3.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 117V
Max. forward impulse current: 3.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 117V; 3.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 117V
Max. forward impulse current: 3.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1774 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.95 грн |
| 17+ | 23.80 грн |
| 19+ | 21.60 грн |
| 50+ | 17.26 грн |
| 95+ | 9.85 грн |
| 260+ | 9.30 грн |
| PD55003-E |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 40V; 2.5A; 31.7W; PowerSO10RF
Electrical mounting: SMT
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of transistor: RF
Drain current: 2.5A
Output power: 3W
Open-loop gain: 17dB
Gate-source voltage: ±20V
Power dissipation: 31.7W
Drain-source voltage: 40V
Efficiency: 52%
Frequency: 500MHz
Case: PowerSO10RF
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 40V; 2.5A; 31.7W; PowerSO10RF
Electrical mounting: SMT
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of transistor: RF
Drain current: 2.5A
Output power: 3W
Open-loop gain: 17dB
Gate-source voltage: ±20V
Power dissipation: 31.7W
Drain-source voltage: 40V
Efficiency: 52%
Frequency: 500MHz
Case: PowerSO10RF
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 757.17 грн |
| 2+ | 630.57 грн |
| 3+ | 629.79 грн |
| 5+ | 595.89 грн |
| STGF19NC60HD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 32W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 32W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 32W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 32W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.68 грн |
| 10+ | 97.74 грн |
| BAL-CC1101-01D3 |
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на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 13.67 грн |
| SMC30J22CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 25.7V; 85A; bidirectional; SMC; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 85A
Max. off-state voltage: 22V
Breakdown voltage: 25.7V
Peak pulse power dissipation: 3kW
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 25.7V; 85A; bidirectional; SMC; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 85A
Max. off-state voltage: 22V
Breakdown voltage: 25.7V
Peak pulse power dissipation: 3kW
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| SMC30J33CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 38.6V; 56A; bidirectional; SMC; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: bidirectional
Leakage current: 0.2µA
Max. forward impulse current: 56A
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Peak pulse power dissipation: 3kW
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 38.6V; 56A; bidirectional; SMC; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMC
Semiconductor structure: bidirectional
Leakage current: 0.2µA
Max. forward impulse current: 56A
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Peak pulse power dissipation: 3kW
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| STM32F303RCT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Kind of architecture: Cortex M4
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F3
Operating temperature: -40...85°C
Number of 12bit A/D converters: 22
Number of 12bit D/A converters: 2
Supply voltage: 2...3.6V DC
Number of inputs/outputs: 52
Memory: 40kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; IrDA; LIN; SPI; USART; USB
Integrated circuit features: DMA; PoR; PWM
Case: LQFP64
Mounting: SMD
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Kind of architecture: Cortex M4
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F3
Operating temperature: -40...85°C
Number of 12bit A/D converters: 22
Number of 12bit D/A converters: 2
Supply voltage: 2...3.6V DC
Number of inputs/outputs: 52
Memory: 40kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; IrDA; LIN; SPI; USART; USB
Integrated circuit features: DMA; PoR; PWM
Case: LQFP64
Mounting: SMD
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| STPS2200U |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 2756 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.37 грн |
| 25+ | 16.08 грн |
| 27+ | 14.90 грн |
| 50+ | 13.08 грн |
| CR95HF-VMD5T |
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Виробник: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: NFC/RFID tag; 2.7÷5.5VDC; SPI,UART; SMD; VFQFPN32; reel,tape
Interface: SPI; UART
Supply voltage: 2.7...5.5V DC
Frequency: 13.56MHz
Type of integrated circuit: NFC/RFID tag
Case: VFQFPN32
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -25...85°C
Category: Interfaces others - integrated circuits
Description: IC: NFC/RFID tag; 2.7÷5.5VDC; SPI,UART; SMD; VFQFPN32; reel,tape
Interface: SPI; UART
Supply voltage: 2.7...5.5V DC
Frequency: 13.56MHz
Type of integrated circuit: NFC/RFID tag
Case: VFQFPN32
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -25...85°C
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од. на суму грн.
| L5970AD |
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Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uout: 1.235÷35VDC; 1.5A; SO8; SMD; 500kHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: tube
Frequency: 0.5MHz
Output voltage: 1.235...35V DC
Output current: 1.5A
Operating voltage: 4.4...36V DC
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uout: 1.235÷35VDC; 1.5A; SO8; SMD; 500kHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Kind of package: tube
Frequency: 0.5MHz
Output voltage: 1.235...35V DC
Output current: 1.5A
Operating voltage: 4.4...36V DC
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 235.98 грн |
| 10+ | 165.53 грн |
| 25+ | 162.37 грн |
| SMBJ18A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 21.1V; 21.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 21.1V
Max. forward impulse current: 21.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 21.1V; 21.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 21.1V
Max. forward impulse current: 21.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2219 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 19.52 грн |
| 30+ | 13.16 грн |
| 50+ | 9.98 грн |
| 100+ | 8.77 грн |
| 250+ | 7.30 грн |
| 500+ | 6.36 грн |
| 1000+ | 5.43 грн |
| STPS10L60CFP | ![]() |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 5Ax2; TO220FP; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 180A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 5Ax2; TO220FP; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 180A
Kind of package: tube
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од. на суму грн.
| SM6T27A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 27V; 16A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 27V; 16A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2523 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.11 грн |
| 20+ | 20.02 грн |
| 50+ | 16.55 грн |
| 100+ | 15.05 грн |
| 148+ | 6.31 грн |
| 405+ | 5.99 грн |
| 1000+ | 5.91 грн |
| STP140NF75 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ III; unipolar; 75V; 100A; 310W
Type of transistor: N-MOSFET
Technology: STripFET™ III
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ III; unipolar; 75V; 100A; 310W
Type of transistor: N-MOSFET
Technology: STripFET™ III
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 148 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 245.32 грн |
| 10+ | 199.42 грн |
| 25+ | 165.53 грн |
| 50+ | 135.57 грн |
| 100+ | 112.72 грн |
| STP140N6F7 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 60V; 80A; Idm: 320A; 158W
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 3.5mΩ
Power dissipation: 158W
Gate-source voltage: ±20V
Pulsed drain current: 320A
Case: TO220-3
Technology: STripFET™
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 60V; 80A; Idm: 320A; 158W
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 3.5mΩ
Power dissipation: 158W
Gate-source voltage: ±20V
Pulsed drain current: 320A
Case: TO220-3
Technology: STripFET™
Kind of channel: enhancement
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.34 грн |
| 10+ | 101.68 грн |
| 25+ | 96.16 грн |
| Z0107MA 2AL2 |
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на замовлення 8000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 5.52 грн |
| STH315N10F7-2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 215.61 грн |
| STF16N60M6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.7nC
Pulsed drain current: 32A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.7nC
Pulsed drain current: 32A
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| STEVAL-BFA001V1B |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; programmer,prototype board
Type of development kit: STM32
Kit contents: programmer; prototype board
Components: HTS221; ISM330DLC; L6362A; LPS22HB; MP34DT05; STM32F469AI
Kind of architecture: Cortex M4
Category: STM development kits
Description: Dev.kit: STM32; programmer,prototype board
Type of development kit: STM32
Kit contents: programmer; prototype board
Components: HTS221; ISM330DLC; L6362A; LPS22HB; MP34DT05; STM32F469AI
Kind of architecture: Cortex M4
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| ACST410-8FP |
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на замовлення 400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 54.33 грн |
| STP16DPP05XTTR |
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Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 84.89 грн |
| TIP112 |
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Виробник: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of transistor: Darlington
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of transistor: Darlington
на замовлення 559 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.61 грн |
| 11+ | 37.76 грн |
| 50+ | 29.72 грн |
| 100+ | 26.96 грн |
| 200+ | 24.43 грн |
| 500+ | 21.83 грн |
| STF21N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 51 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 346.33 грн |
| 5+ | 229.37 грн |
| 12+ | 217.55 грн |
| 25+ | 208.88 грн |
| STL21N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STP21N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
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| VIPER0PLDTR |
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на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 50.08 грн |
| STW68N65DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 172A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 172A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
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| SMCJ5.0A-TR | ![]() |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
на замовлення 761 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 16.98 грн |
| 250+ | 14.98 грн |
| STB140NF75T4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 310W; D2PAK; ESD
Case: D2PAK
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Technology: SuperMesh™
Polarisation: unipolar
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Power dissipation: 310W
Drain current: 100A
Drain-source voltage: 75V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 310W; D2PAK; ESD
Case: D2PAK
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: SMD
Technology: SuperMesh™
Polarisation: unipolar
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Power dissipation: 310W
Drain current: 100A
Drain-source voltage: 75V
Kind of package: reel; tape
на замовлення 1059 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 211.36 грн |
| 10+ | 156.86 грн |
| 50+ | 134.00 грн |
| 100+ | 125.33 грн |
| 500+ | 107.99 грн |
| 1000+ | 101.68 грн |
| STM32F207ZCT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN; Ethernet; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Memory: 128kB RAM; 256kB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN; Ethernet; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Memory: 128kB RAM; 256kB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
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| STPS8H100D |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; TO220AC; Ufmax: 0.56V
Kind of package: tube
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: TO220AC
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.56V
Load current: 8A
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; TO220AC; Ufmax: 0.56V
Kind of package: tube
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: TO220AC
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 0.56V
Load current: 8A
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
на замовлення 416 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.18 грн |
| 10+ | 41.14 грн |
| 11+ | 36.10 грн |
| 25+ | 30.66 грн |
| 50+ | 30.11 грн |
| STM8L052R8T6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP64; Architecture: STM8; STM8L
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Number of inputs/outputs: 54
Case: LQFP64
Kind of architecture: STM8
Integrated circuit features: Brown Out Detection (BOD); Brown Out Reset (BOR); DMA; internal clock oscillator; PoR; PWM; UART
Operating temperature: -40...85°C
Number of 16bit timers: 5
Family: STM8L
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP64; Architecture: STM8; STM8L
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Number of inputs/outputs: 54
Case: LQFP64
Kind of architecture: STM8
Integrated circuit features: Brown Out Detection (BOD); Brown Out Reset (BOR); DMA; internal clock oscillator; PoR; PWM; UART
Operating temperature: -40...85°C
Number of 16bit timers: 5
Family: STM8L
Kind of core: 8-bit
на замовлення 120370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 21.22 грн |
| SMBJ6.0CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.05V; 61A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7.05V
Max. forward impulse current: 61A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.05V; 61A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7.05V
Max. forward impulse current: 61A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
на замовлення 1305 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.22 грн |
| 29+ | 13.79 грн |
| 34+ | 11.90 грн |
| 50+ | 10.48 грн |
| 100+ | 9.38 грн |
| 250+ | 7.88 грн |
| 500+ | 6.94 грн |
| 1000+ | 5.99 грн |
| X-NUCLEO-IKA01A1 |
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Виробник: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: TSU104,TSZ124
Type of accessories for development kits: expansion board
Components: TSU104; TSZ124
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips
development kits accessories features: operational amplifier
Category: Add-on boards
Description: Expansion board; Comp: TSU104,TSZ124
Type of accessories for development kits: expansion board
Components: TSU104; TSZ124
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips
development kits accessories features: operational amplifier
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| TSZ124IPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 4; TSSOP14; 1.8÷5.5VDC
Integrated circuit features: micropower; rail-to-rail; zero-drift
Type of integrated circuit: operational amplifier
Case: TSSOP14
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 0.3nA
Input offset current: 0.6nA
Input offset voltage: 8µV
Quiescent current: 40µA
Slew rate: 0.19V/μs
Voltage supply range: 1.8...5.5V DC
Number of channels: 4
Bandwidth: 400kHz
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 4; TSSOP14; 1.8÷5.5VDC
Integrated circuit features: micropower; rail-to-rail; zero-drift
Type of integrated circuit: operational amplifier
Case: TSSOP14
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 0.3nA
Input offset current: 0.6nA
Input offset voltage: 8µV
Quiescent current: 40µA
Slew rate: 0.19V/μs
Voltage supply range: 1.8...5.5V DC
Number of channels: 4
Bandwidth: 400kHz
Mounting: SMT
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| TSZ124IQ4T |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 4; QFN16; 1.8÷5.5VDC
Integrated circuit features: micropower; rail-to-rail; zero-drift
Type of integrated circuit: operational amplifier
Case: QFN16
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 0.3nA
Input offset current: 0.6nA
Input offset voltage: 8µV
Quiescent current: 40µA
Slew rate: 0.19V/μs
Voltage supply range: 1.8...5.5V DC
Number of channels: 4
Bandwidth: 400kHz
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 4; QFN16; 1.8÷5.5VDC
Integrated circuit features: micropower; rail-to-rail; zero-drift
Type of integrated circuit: operational amplifier
Case: QFN16
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 0.3nA
Input offset current: 0.6nA
Input offset voltage: 8µV
Quiescent current: 40µA
Slew rate: 0.19V/μs
Voltage supply range: 1.8...5.5V DC
Number of channels: 4
Bandwidth: 400kHz
Mounting: SMT
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| TSZ124IYPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 4; TSSOP14; 1.8÷5.5VDC
Integrated circuit features: micropower; rail-to-rail; zero-drift
Type of integrated circuit: operational amplifier
Case: TSSOP14
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 0.3nA
Input offset current: 0.6nA
Input offset voltage: 8µV
Quiescent current: 40µA
Slew rate: 0.19V/μs
Voltage supply range: 1.8...5.5V DC
Number of channels: 4
Bandwidth: 400kHz
Application: automotive industry
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 4; TSSOP14; 1.8÷5.5VDC
Integrated circuit features: micropower; rail-to-rail; zero-drift
Type of integrated circuit: operational amplifier
Case: TSSOP14
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 0.3nA
Input offset current: 0.6nA
Input offset voltage: 8µV
Quiescent current: 40µA
Slew rate: 0.19V/μs
Voltage supply range: 1.8...5.5V DC
Number of channels: 4
Bandwidth: 400kHz
Application: automotive industry
Mounting: SMT
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| X-NUCLEO-PLC01A1 |
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Виробник: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: CLT01-38SQ7,VNI8200XP
Type of accessories for development kits: expansion board
Components: CLT01-38SQ7; VNI8200XP
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips
development kits accessories features: I/O expander
Category: Add-on boards
Description: Expansion board; Comp: CLT01-38SQ7,VNI8200XP
Type of accessories for development kits: expansion board
Components: CLT01-38SQ7; VNI8200XP
Associated circuits: STM32
Interface: GPIO
Kind of connector: pin strips
development kits accessories features: I/O expander
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| STM32F103VEH6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LFBGA100; 2÷3.6VDC; STM32F1
Family: STM32F1
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Supply voltage: 2...3.6V DC
Number of 12bit A/D converters: 16
Number of inputs/outputs: 80
Memory: 64kB SRAM; 512kB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: DMA; internal temperature sensor; PoR; PWM
Case: LFBGA100
Mounting: SMD
Type of integrated circuit: STM32 ARM microcontroller
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LFBGA100; 2÷3.6VDC; STM32F1
Family: STM32F1
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Supply voltage: 2...3.6V DC
Number of 12bit A/D converters: 16
Number of inputs/outputs: 80
Memory: 64kB SRAM; 512kB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: DMA; internal temperature sensor; PoR; PWM
Case: LFBGA100
Mounting: SMD
Type of integrated circuit: STM32 ARM microcontroller
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| P6KE30CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 30V; 14.5A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 30V; 14.5A; bidirectional; ±5%; DO15; 600W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
на замовлення 525 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.07 грн |
| 24+ | 16.55 грн |
| 27+ | 14.74 грн |
| 50+ | 11.27 грн |
| 100+ | 10.09 грн |
| 125+ | 9.62 грн |
| 250+ | 8.59 грн |
| 500+ | 8.20 грн |



















