Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (164546) > Сторінка 2709 з 2743
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| ESDA7P120-1U1M | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.4kW; 6.8V; 120A; unidirectional; QFN1610; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.4kW Max. off-state voltage: 5.5V Breakdown voltage: 6.8V Max. forward impulse current: 120A Semiconductor structure: unidirectional Case: QFN1610 Mounting: SMD Leakage current: 1.5µA Kind of package: reel; tape Version: ESD |
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| STP28N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 13A; Idm: 80A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 35nC Pulsed drain current: 80A |
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| STP38N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 95mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 71nC Pulsed drain current: 120A |
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| STFW38N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 57W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 57W Case: TO3PF Gate-source voltage: ±25V On-state resistance: 95mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 71nC Pulsed drain current: 120A |
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| STM32G0C1RCT3 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 60 Case: LQFP64 Supply voltage: 1.7...3.6V DC Interface: CAN-FD x2; HDMI CEC; I2C x3; LPUART; SPI x3; USART x6; USB Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog Memory: 128kB SRAM; 144kB SRAM; 256kB FLASH Operating temperature: -40...125°C Number of 12bit A/D converters: 19 Number of 12bit D/A converters: 2 Number of 16bit timers: 12 Number of 32bit timers: 1 Family: STM32G0 Kind of package: in-tray Kind of core: 32-bit |
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| STM32G0C1RCT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 60 Case: LQFP64 Supply voltage: 1.7...3.6V DC Interface: CAN-FD x2; HDMI CEC; I2C x3; LPUART; SPI x3; USART x6; USB Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog Memory: 128kB SRAM; 144kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 19 Number of 12bit D/A converters: 2 Number of 16bit timers: 12 Number of 32bit timers: 1 Family: STM32G0 Kind of package: in-tray Kind of core: 32-bit |
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| STPS120MF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO222AA; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: DO222AA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.54V Max. load current: 2A Max. forward impulse current: 50A Kind of package: reel; tape |
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T1625T-8I | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 16A; TO220ABIns; Igt: 25mA; Ifsm: 126A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220ABIns Gate current: 25mA Max. forward impulse current: 126A Mounting: THT Kind of package: tube |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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| T810T-8T | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 8A; TO220AB; Igt: 10mA; Ifsm: 63A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 10mA Max. forward impulse current: 63A Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| T810H-6T | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 84A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 10mA Max. forward impulse current: 84A Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature |
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В кошику од. на суму грн. | |||||||||||||||||
| T810T-6I | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; TO220ABIns; Igt: 10mA; Ifsm: 63A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220ABIns Gate current: 10mA Max. forward impulse current: 63A Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| T810T-8G | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 8A; D2PAK; Igt: 10mA; Ifsm: 63A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 10mA Max. forward impulse current: 63A Mounting: SMD Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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T810-800B-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 8A; DPAK; Igt: 10mA; Snubberless™; logic level Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 10mA Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: logic level Technology: Snubberless™ |
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| T810H-6G | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; D2PAK; Igt: 10mA; Ifsm: 84A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: D2PAK Gate current: 10mA Max. forward impulse current: 84A Mounting: SMD Kind of package: tube Features of semiconductor devices: high temperature |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| T810H-6G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 8A; D2PAK; Igt: 10mA; Ifsm: 84A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: D2PAK Gate current: 10mA Max. forward impulse current: 84A Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: high temperature |
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В кошику од. на суму грн. | |||||||||||||||||
| T810T-8G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 8A; D2PAK; Igt: 10mA; Ifsm: 63A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 10mA Max. forward impulse current: 63A Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STPS20L60CG-TR | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.56V Max. forward impulse current: 220A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STMPS2171STR | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1A; Ch: 1; SMD; SOT23-5; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1A Number of channels: 1 Mounting: SMD Case: SOT23-5 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.7...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TYN640RG | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 40A; 25A; Igt: 35mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 40A Load current: 25A Gate current: 35mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 460A |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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TYN840RG | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 35mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 40A Load current: 25A Gate current: 35mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 460A |
на замовлення 87 шт: термін постачання 21-30 дні (днів) |
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| MJD32CT4-A | STMicroelectronics |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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L6591 | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: driver; PFC controller; SO16; 1mA; Ch: 1; 11.3÷22V; Ioper: 8mA Type of integrated circuit: driver Kind of integrated circuit: PFC controller Case: SO16 Output current: 1mA Mounting: SMD Operating temperature: -40...150°C Supply voltage: 11.3...22V Operating current: 8mA Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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L6591TR | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: driver; PFC controller; SO16; 1mA; 11.3÷22V; Ioper: 8mA Type of integrated circuit: driver Kind of integrated circuit: PFC controller Case: SO16 Output current: 1mA Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Supply voltage: 11.3...22V Operating current: 8mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| STY50N105DK5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 1050V; 46A; 625W Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 46A Power dissipation: 625W Case: MAX247 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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T1210-800G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 12A; D2PAK; Igt: 10mA Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Gate current: 10mA Case: D2PAK Mounting: SMD Kind of package: reel; tape |
на замовлення 136 шт: термін постачання 21-30 дні (днів) |
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SMCJ5.0CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.74V Max. forward impulse current: 171A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 2mA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VN340SP-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 700mA; Ch: 4; SMD; PowerSO10; tube Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Mounting: SMD Number of channels: 4 Operating temperature: -40...125°C Case: PowerSO10 Supply voltage: 10...36V Kind of package: tube On-state resistance: 0.32Ω |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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| STGIB15CH60S-XZ | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Technology: SLLIMM 2nd Mounting: THT Operating temperature: -40...125°C Power dissipation: 81W Output current: 15A Number of channels: 6 Collector-emitter voltage: 600V Operating voltage: 13.5...18/0...400V DC Frequency: 20kHz Kind of integrated circuit: 3-phase motor controller; IPM Case: SDIP2B-26L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PD57060S-E | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 65V; 7A; 79W; PowerSO10RF Polarisation: unipolar Case: PowerSO10RF Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: SMD Power dissipation: 79W Drain current: 7A Gate-source voltage: ±20V Drain-source voltage: 65V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PD57060TR-E | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 65V; 7A; 79W; PowerSO10RF Polarisation: unipolar Case: PowerSO10RF Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Power dissipation: 79W Drain current: 7A Gate-source voltage: ±20V Drain-source voltage: 65V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MJD340T4 | STMicroelectronics |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V Case: DPAK Polarisation: bipolar |
на замовлення 1981 шт: термін постачання 21-30 дні (днів) |
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STD3NK60Z-1 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.51A; Idm: 9.6A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.51A Pulsed drain current: 9.6A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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STP3NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 45W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.51A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 192 шт: термін постачання 21-30 дні (днів) |
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STP13NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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STW13NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 289 шт: термін постачання 21-30 дні (днів) |
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STP3NK60ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 20W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.51A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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| STD3NK60ZT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.51A; Idm: 9.6A; 45W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.51A Pulsed drain current: 9.6A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STB13NK60ZT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 150W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.2A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSC101BILT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; Ch: 1; Uoper: 4÷24V; SOT23-5; 8uA Type of integrated circuit: instrumentation amplifier Number of channels: 1 Operating voltage: 4...24V Mounting: SMT Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 0.9V/μs Input offset voltage: 2.3mV Kind of package: reel; tape Input bias current: 8µA Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSC101CILT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; Ch: 1; Uoper: 4÷24V; SOT23-5; 8uA Kind of package: reel; tape Operating temperature: -40...125°C Input bias current: 8µA Input offset voltage: 2.3mV Slew rate: 0.9V/μs Number of channels: 1 Operating voltage: 4...24V Type of integrated circuit: instrumentation amplifier Kind of integrated circuit: current sense Case: SOT23-5 Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSC101AIYLT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; Ch: 1; Uoper: 4÷24V; SOT23-5; 8uA Kind of package: reel; tape Operating temperature: -40...125°C Input bias current: 8µA Input offset voltage: 2.3mV Slew rate: 0.9V/μs Number of channels: 1 Operating voltage: 4...24V Type of integrated circuit: instrumentation amplifier Application: automotive industry Kind of integrated circuit: current sense Case: SOT23-5 Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSC101BIYLT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; Ch: 1; Uoper: 4÷24V; SOT23-5; 8uA Type of integrated circuit: instrumentation amplifier Number of channels: 1 Operating voltage: 4...24V Mounting: SMT Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 0.9V/μs Input offset voltage: 2.3mV Kind of package: reel; tape Input bias current: 8µA Application: automotive industry Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSC101CIYLT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; Ch: 1; Uoper: 4÷24V; SOT23-5; 8uA Kind of package: reel; tape Operating temperature: -40...125°C Input bias current: 8µA Input offset voltage: 2.3mV Slew rate: 0.9V/μs Number of channels: 1 Operating voltage: 4...24V Type of integrated circuit: instrumentation amplifier Application: automotive industry Kind of integrated circuit: current sense Case: SOT23-5 Mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VN340SPTR-33-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1A; Ch: 4; SMD; PowerSO10; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1A Mounting: SMD Number of channels: 4 Operating temperature: -40...125°C Case: PowerSO10 Supply voltage: 10...36V Kind of package: reel; tape On-state resistance: 0.32Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| STM32L011F3U6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 32MHz; UFQFPN20; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 32MHz Mounting: SMD Number of inputs/outputs: 16 Case: UFQFPN20 Supply voltage: 1.8...3.6V DC Interface: I2C; LPUART; SPI; USART Kind of architecture: Cortex M0+ Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; watchdog Memory: 512B EEPROM; 2kB SRAM; 8kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 10 Number of 16bit timers: 3 Family: STM32L0 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TSM1012AID | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: driver; battery charging controller; SO8; 2.5mA Type of integrated circuit: driver Kind of integrated circuit: battery charging controller Case: SO8 Output current: 2.5mA Integrated circuit features: built-in operational amplifier Mounting: SMD Operating temperature: -40...105°C Application: SMPS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TSM1052 | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver; CV/CC controller; SOT23-6; 0.1A; Ch: 1; 1.7÷18VDC Type of integrated circuit: driver Kind of integrated circuit: CV/CC controller Case: SOT23-6 Output current: 0.1A Number of channels: 1 Integrated circuit features: operational amplifier x2; voltage reference: 1,21V±0,5% Mounting: SMD Operating temperature: -10...85°C Application: charging control; SMPS Operating voltage: 1.7...18V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STGW30NC120HD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 30A; 220W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 220W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 135A Mounting: THT Gate charge: 110nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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STGF3NC120HD | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 3A; 25W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 3A Power dissipation: 25W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Gate charge: 24nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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STGWA15H120DF2 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 259W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 67nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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STGWA25M120DF3 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3 Collector current: 25A Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 100A Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Gate charge: 85nC Power dissipation: 375W Collector-emitter voltage: 1.2kV Kind of package: tube Type of transistor: IGBT |
на замовлення 64 шт: термін постачання 21-30 дні (днів) |
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STGW40H120DF2 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 468W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 158nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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STGYA50H120DF2 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 50A; 535W; MAX247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 535W Case: MAX247 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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STGWA40H120DF2 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 468W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 158nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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LF347D | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4MHz; Ch: 4; SO14; 8÷36VDC; tube Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 16V/μs Operating temperature: 0...70°C Input offset voltage: 3mV Voltage supply range: 8...36V DC Integrated circuit features: high speed Kind of package: tube |
на замовлення 572 шт: термін постачання 21-30 дні (днів) |
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LF347DT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4MHz; Ch: 4; SO14; 8÷36VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 16V/μs Operating temperature: 0...70°C Input offset voltage: 3mV Voltage supply range: 8...36V DC Integrated circuit features: high speed Kind of package: reel; tape |
на замовлення 534 шт: термін постачання 21-30 дні (днів) |
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MC33174DT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 2.1MHz; Ch: 4; SO14; 4÷44VDC; reel,tape Mounting: SMT Operating temperature: -40...105°C Input offset voltage: 6.5mV Number of channels: 4 Voltage supply range: 4...44V DC Slew rate: 2V/μs Bandwidth: 2.1MHz Kind of package: reel; tape Case: SO14 Type of integrated circuit: operational amplifier |
на замовлення 16690 шт: термін постачання 21-30 дні (днів) |
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TD310ID | STMicroelectronics |
Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; IGBT gate driver,MOSFET gate driver; SO16 Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: IGBT gate driver; MOSFET gate driver Case: SO16 Output current: 0.6A Output voltage: 5V Number of channels: 3 DC supply current: 2mA Mounting: SMD Supply voltage: 4...16V |
на замовлення 114 шт: термін постачання 21-30 дні (днів) |
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L6395D | STMicroelectronics |
Category: MOSFET/IGBT driversDescription: IC: driver; push-pull; SO8; 580V; Ch: 2; 800kHz; Usup: 10÷20V Type of integrated circuit: driver Topology: push-pull Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver Case: SO8 Output voltage: 580V Number of channels: 2 DC supply current: 350µA Mounting: SMD Supply voltage: 10...20V Frequency: 800kHz Kind of package: tube Operating temperature: -40...125°C |
на замовлення 207 шт: термін постачання 21-30 дні (днів) |
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| STM32L496ZGT3 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 80MHz; LQFP144; 1.71÷3.6VDC; Cmp: 2 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 80MHz Mounting: SMD Case: LQFP144 Supply voltage: 1.71...3.6V DC Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; SWPMI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 320kB SRAM; 1MB FLASH Operating temperature: -40...125°C Number of 12bit A/D converters: 3 Number of comparators: 2 Number of 12bit D/A converters: 2 Family: STM32L4 Kind of core: 32-bit Number of inputs/outputs: 115 |
товару немає в наявності |
В кошику од. на суму грн. |
| ESDA7P120-1U1M |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.4kW; 6.8V; 120A; unidirectional; QFN1610; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.4kW
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8V
Max. forward impulse current: 120A
Semiconductor structure: unidirectional
Case: QFN1610
Mounting: SMD
Leakage current: 1.5µA
Kind of package: reel; tape
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.4kW; 6.8V; 120A; unidirectional; QFN1610; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.4kW
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8V
Max. forward impulse current: 120A
Semiconductor structure: unidirectional
Case: QFN1610
Mounting: SMD
Leakage current: 1.5µA
Kind of package: reel; tape
Version: ESD
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В кошику
од. на суму грн.
| STP28N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 80A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 80A
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| STP38N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 120A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 120A
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| STFW38N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 57W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 57W
Case: TO3PF
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 120A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 57W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 57W
Case: TO3PF
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 120A
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| STM32G0C1RCT3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN-FD x2; HDMI CEC; I2C x3; LPUART; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 128kB SRAM; 144kB SRAM; 256kB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 19
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 1
Family: STM32G0
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN-FD x2; HDMI CEC; I2C x3; LPUART; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 128kB SRAM; 144kB SRAM; 256kB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 19
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 1
Family: STM32G0
Kind of package: in-tray
Kind of core: 32-bit
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| STM32G0C1RCT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN-FD x2; HDMI CEC; I2C x3; LPUART; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 128kB SRAM; 144kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 1
Family: STM32G0
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN-FD x2; HDMI CEC; I2C x3; LPUART; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 128kB SRAM; 144kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 1
Family: STM32G0
Kind of package: in-tray
Kind of core: 32-bit
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| STPS120MF |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO222AA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO222AA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO222AA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO222AA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
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| T1625T-8I |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; TO220ABIns; Igt: 25mA; Ifsm: 126A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220ABIns
Gate current: 25mA
Max. forward impulse current: 126A
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220ABIns; Igt: 25mA; Ifsm: 126A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220ABIns
Gate current: 25mA
Max. forward impulse current: 126A
Mounting: THT
Kind of package: tube
на замовлення 37 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 111.47 грн |
| 10+ | 61.22 грн |
| 25+ | 53.37 грн |
| T810T-8T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10mA; Ifsm: 63A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 63A
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10mA; Ifsm: 63A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 63A
Mounting: THT
Kind of package: tube
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| T810H-6T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 84A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 84A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
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| T810T-6I |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220ABIns; Igt: 10mA; Ifsm: 63A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220ABIns
Gate current: 10mA
Max. forward impulse current: 63A
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220ABIns; Igt: 10mA; Ifsm: 63A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220ABIns
Gate current: 10mA
Max. forward impulse current: 63A
Mounting: THT
Kind of package: tube
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| T810T-8G |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 10mA; Ifsm: 63A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 63A
Mounting: SMD
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 10mA; Ifsm: 63A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 63A
Mounting: SMD
Kind of package: tube
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| T810-800B-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Snubberless™; logic level
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: logic level
Technology: Snubberless™
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Snubberless™; logic level
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: logic level
Technology: Snubberless™
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| T810H-6G |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 10mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 84A
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high temperature
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 10mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 84A
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high temperature
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| T810H-6G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 10mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 84A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Category: Triacs
Description: Triac; 600V; 8A; D2PAK; Igt: 10mA; Ifsm: 84A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 84A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
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| T810T-8G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 10mA; Ifsm: 63A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 63A
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 10mA; Ifsm: 63A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 63A
Mounting: SMD
Kind of package: reel; tape
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| STPS20L60CG-TR |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.56V
Max. forward impulse current: 220A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.56V
Max. forward impulse current: 220A
Kind of package: reel; tape
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| STMPS2171STR |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; SMD; SOT23-5; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Mounting: SMD
Case: SOT23-5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; SMD; SOT23-5; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Mounting: SMD
Case: SOT23-5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V
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| TYN640RG |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 40A; 25A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 40A
Load current: 25A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 460A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 40A; 25A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 40A
Load current: 25A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 460A
на замовлення 61 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.40 грн |
| 4+ | 125.34 грн |
| 10+ | 116.45 грн |
| TYN840RG |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 460A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 40A; 25A; Igt: 35mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 40A
Load current: 25A
Gate current: 35mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 460A
на замовлення 87 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 230.78 грн |
| 10+ | 212.68 грн |
| MJD32CT4-A |
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Виробник: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| L6591 |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; SO16; 1mA; Ch: 1; 11.3÷22V; Ioper: 8mA
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: SO16
Output current: 1mA
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 11.3...22V
Operating current: 8mA
Number of channels: 1
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; SO16; 1mA; Ch: 1; 11.3÷22V; Ioper: 8mA
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: SO16
Output current: 1mA
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 11.3...22V
Operating current: 8mA
Number of channels: 1
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| L6591TR |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; SO16; 1mA; 11.3÷22V; Ioper: 8mA
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: SO16
Output current: 1mA
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 11.3...22V
Operating current: 8mA
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; SO16; 1mA; 11.3÷22V; Ioper: 8mA
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: SO16
Output current: 1mA
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 11.3...22V
Operating current: 8mA
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| STY50N105DK5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 1050V; 46A; 625W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 46A
Power dissipation: 625W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 1050V; 46A; 625W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 46A
Power dissipation: 625W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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| T1210-800G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 10mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 10mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 136 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 128.02 грн |
| 10+ | 75.69 грн |
| 100+ | 52.00 грн |
| SMCJ5.0CA-TR | ![]() |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
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| VN340SP-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 4; SMD; PowerSO10; tube
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 4
Operating temperature: -40...125°C
Case: PowerSO10
Supply voltage: 10...36V
Kind of package: tube
On-state resistance: 0.32Ω
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 4; SMD; PowerSO10; tube
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 4
Operating temperature: -40...125°C
Case: PowerSO10
Supply voltage: 10...36V
Kind of package: tube
On-state resistance: 0.32Ω
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 344.00 грн |
| 5+ | 295.17 грн |
| STGIB15CH60S-XZ |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Technology: SLLIMM 2nd
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 81W
Output current: 15A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...18/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SDIP2B-26L
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SLLIMM 2nd
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Technology: SLLIMM 2nd
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 81W
Output current: 15A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...18/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SDIP2B-26L
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| PD57060S-E |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 7A; 79W; PowerSO10RF
Polarisation: unipolar
Case: PowerSO10RF
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: SMD
Power dissipation: 79W
Drain current: 7A
Gate-source voltage: ±20V
Drain-source voltage: 65V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 7A; 79W; PowerSO10RF
Polarisation: unipolar
Case: PowerSO10RF
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: SMD
Power dissipation: 79W
Drain current: 7A
Gate-source voltage: ±20V
Drain-source voltage: 65V
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| PD57060TR-E |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 7A; 79W; PowerSO10RF
Polarisation: unipolar
Case: PowerSO10RF
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 79W
Drain current: 7A
Gate-source voltage: ±20V
Drain-source voltage: 65V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 7A; 79W; PowerSO10RF
Polarisation: unipolar
Case: PowerSO10RF
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 79W
Drain current: 7A
Gate-source voltage: ±20V
Drain-source voltage: 65V
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| MJD340T4 |
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Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Case: DPAK
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Case: DPAK
Polarisation: bipolar
на замовлення 1981 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.90 грн |
| 13+ | 32.75 грн |
| 50+ | 25.07 грн |
| 100+ | 22.48 грн |
| 500+ | 17.79 грн |
| 1000+ | 16.25 грн |
| STD3NK60Z-1 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; Idm: 9.6A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Pulsed drain current: 9.6A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; Idm: 9.6A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Pulsed drain current: 9.6A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 290 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 97.54 грн |
| 7+ | 65.83 грн |
| 12+ | 34.69 грн |
| 75+ | 32.35 грн |
| 150+ | 30.89 грн |
| STP3NK60Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 45W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 45W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 192 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.93 грн |
| 50+ | 38.01 грн |
| STP13NK60Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.51 грн |
| 10+ | 99.47 грн |
| STW13NK60Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 289 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 165.47 грн |
| 30+ | 123.73 грн |
| STP3NK60ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 20W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 20W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 118.44 грн |
| 10+ | 63.24 грн |
| 25+ | 58.87 грн |
| 50+ | 55.56 грн |
| 100+ | 52.48 грн |
| STD3NK60ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; Idm: 9.6A; 45W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Pulsed drain current: 9.6A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; Idm: 9.6A; 45W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Pulsed drain current: 9.6A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| STB13NK60ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 150W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 150W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| TSC101BILT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; Ch: 1; Uoper: 4÷24V; SOT23-5; 8uA
Type of integrated circuit: instrumentation amplifier
Number of channels: 1
Operating voltage: 4...24V
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.9V/μs
Input offset voltage: 2.3mV
Kind of package: reel; tape
Input bias current: 8µA
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; Ch: 1; Uoper: 4÷24V; SOT23-5; 8uA
Type of integrated circuit: instrumentation amplifier
Number of channels: 1
Operating voltage: 4...24V
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.9V/μs
Input offset voltage: 2.3mV
Kind of package: reel; tape
Input bias current: 8µA
Kind of integrated circuit: current sense
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| TSC101CILT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; Ch: 1; Uoper: 4÷24V; SOT23-5; 8uA
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 8µA
Input offset voltage: 2.3mV
Slew rate: 0.9V/μs
Number of channels: 1
Operating voltage: 4...24V
Type of integrated circuit: instrumentation amplifier
Kind of integrated circuit: current sense
Case: SOT23-5
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; Ch: 1; Uoper: 4÷24V; SOT23-5; 8uA
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 8µA
Input offset voltage: 2.3mV
Slew rate: 0.9V/μs
Number of channels: 1
Operating voltage: 4...24V
Type of integrated circuit: instrumentation amplifier
Kind of integrated circuit: current sense
Case: SOT23-5
Mounting: SMT
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| TSC101AIYLT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; Ch: 1; Uoper: 4÷24V; SOT23-5; 8uA
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 8µA
Input offset voltage: 2.3mV
Slew rate: 0.9V/μs
Number of channels: 1
Operating voltage: 4...24V
Type of integrated circuit: instrumentation amplifier
Application: automotive industry
Kind of integrated circuit: current sense
Case: SOT23-5
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; Ch: 1; Uoper: 4÷24V; SOT23-5; 8uA
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 8µA
Input offset voltage: 2.3mV
Slew rate: 0.9V/μs
Number of channels: 1
Operating voltage: 4...24V
Type of integrated circuit: instrumentation amplifier
Application: automotive industry
Kind of integrated circuit: current sense
Case: SOT23-5
Mounting: SMT
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| TSC101BIYLT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; Ch: 1; Uoper: 4÷24V; SOT23-5; 8uA
Type of integrated circuit: instrumentation amplifier
Number of channels: 1
Operating voltage: 4...24V
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.9V/μs
Input offset voltage: 2.3mV
Kind of package: reel; tape
Input bias current: 8µA
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; Ch: 1; Uoper: 4÷24V; SOT23-5; 8uA
Type of integrated circuit: instrumentation amplifier
Number of channels: 1
Operating voltage: 4...24V
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.9V/μs
Input offset voltage: 2.3mV
Kind of package: reel; tape
Input bias current: 8µA
Application: automotive industry
Kind of integrated circuit: current sense
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| TSC101CIYLT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; Ch: 1; Uoper: 4÷24V; SOT23-5; 8uA
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 8µA
Input offset voltage: 2.3mV
Slew rate: 0.9V/μs
Number of channels: 1
Operating voltage: 4...24V
Type of integrated circuit: instrumentation amplifier
Application: automotive industry
Kind of integrated circuit: current sense
Case: SOT23-5
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; Ch: 1; Uoper: 4÷24V; SOT23-5; 8uA
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 8µA
Input offset voltage: 2.3mV
Slew rate: 0.9V/μs
Number of channels: 1
Operating voltage: 4...24V
Type of integrated circuit: instrumentation amplifier
Application: automotive industry
Kind of integrated circuit: current sense
Case: SOT23-5
Mounting: SMT
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| VN340SPTR-33-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 4; SMD; PowerSO10; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Mounting: SMD
Number of channels: 4
Operating temperature: -40...125°C
Case: PowerSO10
Supply voltage: 10...36V
Kind of package: reel; tape
On-state resistance: 0.32Ω
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 4; SMD; PowerSO10; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Mounting: SMD
Number of channels: 4
Operating temperature: -40...125°C
Case: PowerSO10
Supply voltage: 10...36V
Kind of package: reel; tape
On-state resistance: 0.32Ω
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| STM32L011F3U6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN20; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 16
Case: UFQFPN20
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; watchdog
Memory: 512B EEPROM; 2kB SRAM; 8kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32L0
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN20; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 16
Case: UFQFPN20
Supply voltage: 1.8...3.6V DC
Interface: I2C; LPUART; SPI; USART
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; watchdog
Memory: 512B EEPROM; 2kB SRAM; 8kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32L0
Kind of package: reel; tape
Kind of core: 32-bit
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| TSM1012AID |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; battery charging controller; SO8; 2.5mA
Type of integrated circuit: driver
Kind of integrated circuit: battery charging controller
Case: SO8
Output current: 2.5mA
Integrated circuit features: built-in operational amplifier
Mounting: SMD
Operating temperature: -40...105°C
Application: SMPS
Category: Drivers - integrated circuits
Description: IC: driver; battery charging controller; SO8; 2.5mA
Type of integrated circuit: driver
Kind of integrated circuit: battery charging controller
Case: SO8
Output current: 2.5mA
Integrated circuit features: built-in operational amplifier
Mounting: SMD
Operating temperature: -40...105°C
Application: SMPS
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| TSM1052 |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; CV/CC controller; SOT23-6; 0.1A; Ch: 1; 1.7÷18VDC
Type of integrated circuit: driver
Kind of integrated circuit: CV/CC controller
Case: SOT23-6
Output current: 0.1A
Number of channels: 1
Integrated circuit features: operational amplifier x2; voltage reference: 1,21V±0,5%
Mounting: SMD
Operating temperature: -10...85°C
Application: charging control; SMPS
Operating voltage: 1.7...18V DC
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: driver; CV/CC controller; SOT23-6; 0.1A; Ch: 1; 1.7÷18VDC
Type of integrated circuit: driver
Kind of integrated circuit: CV/CC controller
Case: SOT23-6
Output current: 0.1A
Number of channels: 1
Integrated circuit features: operational amplifier x2; voltage reference: 1,21V±0,5%
Mounting: SMD
Operating temperature: -10...85°C
Application: charging control; SMPS
Operating voltage: 1.7...18V DC
Kind of package: reel; tape
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| STGW30NC120HD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 220W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 220W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 220W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 220W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 135A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 251.50 грн |
| 3+ | 239.37 грн |
| 10+ | 211.06 грн |
| 25+ | 205.40 грн |
| STGF3NC120HD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 3A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 3A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 3A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 3A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 115.83 грн |
| 10+ | 85.72 грн |
| STGWA15H120DF2 |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 282.17 грн |
| 3+ | 236.13 грн |
| 10+ | 218.34 грн |
| STGWA25M120DF3 |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3
Collector current: 25A
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 100A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Gate charge: 85nC
Power dissipation: 375W
Collector-emitter voltage: 1.2kV
Kind of package: tube
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 375W; TO247-3
Collector current: 25A
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 100A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Gate charge: 85nC
Power dissipation: 375W
Collector-emitter voltage: 1.2kV
Kind of package: tube
Type of transistor: IGBT
на замовлення 64 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 396.25 грн |
| 10+ | 318.62 грн |
| 30+ | 222.39 грн |
| STGW40H120DF2 |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 838.66 грн |
| 3+ | 697.89 грн |
| 10+ | 646.13 грн |
| 30+ | 616.21 грн |
| STGYA50H120DF2 |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 535W; MAX247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 535W
Case: MAX247
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 535W; MAX247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 535W
Case: MAX247
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 560.85 грн |
| STGWA40H120DF2 |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 468W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 380.58 грн |
| 3+ | 317.81 грн |
| 10+ | 294.36 грн |
| LF347D |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; SO14; 8÷36VDC; tube
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 16V/μs
Operating temperature: 0...70°C
Input offset voltage: 3mV
Voltage supply range: 8...36V DC
Integrated circuit features: high speed
Kind of package: tube
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; SO14; 8÷36VDC; tube
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 16V/μs
Operating temperature: 0...70°C
Input offset voltage: 3mV
Voltage supply range: 8...36V DC
Integrated circuit features: high speed
Kind of package: tube
на замовлення 572 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.29 грн |
| 11+ | 37.77 грн |
| 12+ | 35.34 грн |
| 25+ | 33.80 грн |
| 50+ | 32.83 грн |
| 100+ | 32.10 грн |
| 250+ | 31.46 грн |
| LF347DT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; SO14; 8÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 16V/μs
Operating temperature: 0...70°C
Input offset voltage: 3mV
Voltage supply range: 8...36V DC
Integrated circuit features: high speed
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; SO14; 8÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 16V/μs
Operating temperature: 0...70°C
Input offset voltage: 3mV
Voltage supply range: 8...36V DC
Integrated circuit features: high speed
Kind of package: reel; tape
на замовлення 534 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.12 грн |
| 11+ | 37.52 грн |
| 12+ | 34.93 грн |
| 25+ | 32.02 грн |
| 50+ | 30.08 грн |
| 100+ | 28.22 грн |
| 250+ | 26.04 грн |
| 500+ | 24.50 грн |
| MC33174DT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.1MHz; Ch: 4; SO14; 4÷44VDC; reel,tape
Mounting: SMT
Operating temperature: -40...105°C
Input offset voltage: 6.5mV
Number of channels: 4
Voltage supply range: 4...44V DC
Slew rate: 2V/μs
Bandwidth: 2.1MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.1MHz; Ch: 4; SO14; 4÷44VDC; reel,tape
Mounting: SMT
Operating temperature: -40...105°C
Input offset voltage: 6.5mV
Number of channels: 4
Voltage supply range: 4...44V DC
Slew rate: 2V/μs
Bandwidth: 2.1MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
на замовлення 16690 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.22 грн |
| 10+ | 42.37 грн |
| 25+ | 38.41 грн |
| 50+ | 35.58 грн |
| 55+ | 17.55 грн |
| 150+ | 16.58 грн |
| TD310ID |
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Виробник: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver,MOSFET gate driver; SO16
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IGBT gate driver; MOSFET gate driver
Case: SO16
Output current: 0.6A
Output voltage: 5V
Number of channels: 3
DC supply current: 2mA
Mounting: SMD
Supply voltage: 4...16V
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver,MOSFET gate driver; SO16
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IGBT gate driver; MOSFET gate driver
Case: SO16
Output current: 0.6A
Output voltage: 5V
Number of channels: 3
DC supply current: 2mA
Mounting: SMD
Supply voltage: 4...16V
на замовлення 114 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 222.95 грн |
| 5+ | 177.10 грн |
| 10+ | 161.74 грн |
| 25+ | 144.75 грн |
| 50+ | 138.28 грн |
| L6395D |
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Виробник: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO8; 580V; Ch: 2; 800kHz; Usup: 10÷20V
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO8
Output voltage: 580V
Number of channels: 2
DC supply current: 350µA
Mounting: SMD
Supply voltage: 10...20V
Frequency: 800kHz
Kind of package: tube
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO8; 580V; Ch: 2; 800kHz; Usup: 10÷20V
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO8
Output voltage: 580V
Number of channels: 2
DC supply current: 350µA
Mounting: SMD
Supply voltage: 10...20V
Frequency: 800kHz
Kind of package: tube
Operating temperature: -40...125°C
на замовлення 207 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 121.05 грн |
| 5+ | 104.32 грн |
| STM32L496ZGT3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP144; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Case: LQFP144
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; SWPMI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 320kB SRAM; 1MB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 3
Number of comparators: 2
Number of 12bit D/A converters: 2
Family: STM32L4
Kind of core: 32-bit
Number of inputs/outputs: 115
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP144; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Case: LQFP144
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; SWPMI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 320kB SRAM; 1MB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 3
Number of comparators: 2
Number of 12bit D/A converters: 2
Family: STM32L4
Kind of core: 32-bit
Number of inputs/outputs: 115
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