Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170073) > Сторінка 2834 з 2835
Фото | Назва | Виробник | Інформація |
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TSC2010IDT | STMicroelectronics |
![]() Description: IC: instrumentation amplifier; 820kHz; Ch: 1; SO8; 2.4mA; 4.5mV Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: 1 Mounting: SMT Case: SO8 Operating temperature: -20...70°C Slew rate: 7.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Voltage supply range: 2.7...5.5V DC Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TSC2010IYDT | STMicroelectronics |
![]() Description: IC: instrumentation amplifier; 820kHz; Ch: 1; SO8; 2.4mA; 4.5mV Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: 1 Mounting: SMT Case: SO8 Operating temperature: -20...70°C Slew rate: 7.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Voltage supply range: 2.7...5.5V DC Kind of integrated circuit: current sense Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
TSC2010IYST | STMicroelectronics |
![]() Description: IC: instrumentation amplifier; 820kHz; Ch: 1; miniSO8; 2.4mA; 4.5mV Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: 1 Mounting: SMT Case: miniSO8 Operating temperature: -20...70°C Slew rate: 7.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Voltage supply range: 2.7...5.5V DC Kind of integrated circuit: current sense Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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TS951ILT | STMicroelectronics |
![]() Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Mounting: SMT Number of channels: 1 Case: SOT23-5 Slew rate: 1V/μs Operating temperature: -40...125°C Input offset voltage: 8mV Voltage supply range: 2.7...12V DC Integrated circuit features: rail-to-rail; universal Kind of package: reel; tape Input bias current: 0.15µA Input offset current: 80nA |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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TS951IDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 3MHz; Ch: 1; SO8; 2.7÷12VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 3MHz Mounting: SMT Number of channels: 1 Case: SO8 Slew rate: 1V/μs Operating temperature: -40...125°C Input offset voltage: 1.5mV Voltage supply range: 2.7...12V DC Integrated circuit features: rail-to-rail; universal Kind of package: reel; tape Input bias current: 0.15µA Input offset current: 80nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TS9511ILT | STMicroelectronics |
![]() Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Mounting: SMT Number of channels: 1 Case: SOT23-5 Slew rate: 1V/μs Operating temperature: -40...125°C Input offset voltage: 1.5mV Voltage supply range: 2.7...12V DC Integrated circuit features: precision; rail-to-rail Kind of package: reel; tape Input bias current: 0.15nA Input offset current: 80nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TS9511IYLT | STMicroelectronics |
![]() Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Mounting: SMT Number of channels: 1 Case: SOT23-5 Slew rate: 1V/μs Operating temperature: -40...125°C Input offset voltage: 1.5mV Voltage supply range: 2.7...12V DC Integrated circuit features: precision; rail-to-rail Kind of package: reel; tape Input bias current: 0.15µA Input offset current: 80nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TS9511RIYLT | STMicroelectronics |
![]() Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Mounting: SMT Number of channels: 1 Case: SOT23-5 Slew rate: 1V/μs Operating temperature: -40...125°C Input offset voltage: 1.5mV Voltage supply range: 2.7...12V DC Integrated circuit features: precision; rail-to-rail Kind of package: reel; tape Input bias current: 0.15µA Input offset current: 80nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TS951IYLT | STMicroelectronics |
![]() Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Mounting: SMT Number of channels: 1 Case: SOT23-5 Slew rate: 1V/μs Operating temperature: -40...125°C Input offset voltage: 1.5mV Voltage supply range: 2.7...12V DC Integrated circuit features: low power; rail-to-rail Kind of package: reel; tape Input bias current: 0.15µA Input offset current: 80nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TS951RIYLT | STMicroelectronics |
![]() Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Mounting: SMT Number of channels: 1 Case: SOT23-5 Slew rate: 1V/μs Operating temperature: -40...125°C Input offset voltage: 1.5mV Voltage supply range: 2.7...12V DC Integrated circuit features: low power; rail-to-rail Kind of package: reel; tape Input bias current: 0.15µA Input offset current: 80nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
STTH30RQ06G2-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 600V; 30A; 30ns; D2PAKHV; Ufmax: 2.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 180A Case: D2PAKHV Max. forward voltage: 2.95V Max. load current: 50A Leakage current: 40µA Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STTH30RQ06DY | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO220AC; Ir: 40uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 200A Case: TO220AC Max. forward voltage: 2.95V Max. load current: 50A Leakage current: 40µA Reverse recovery time: 30ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STTH30RQ06W | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; DO247; Ir: 40uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 200A Case: DO247 Max. forward voltage: 2.95V Max. load current: 50A Leakage current: 40µA Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STTH30RQ06WL | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; DO247; Ir: 40uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 200A Case: DO247 Max. forward voltage: 2.95V Max. load current: 50A Leakage current: 40µA Reverse recovery time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STTH3002CT | STMicroelectronics |
![]() Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 180A; TO220AB; 17ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 180A Case: TO220AB Max. forward voltage: 0.75V Reverse recovery time: 17ns Heatsink thickness: 1.23...1.32mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
STTH3002G-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 200V; 30A; 22ns; D2PAK; Ufmax: 0.77V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 0.3kA Case: D2PAK Max. forward voltage: 0.77V Reverse recovery time: 22ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STTH30L06CG-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 600V; 15Ax2; 55ns; D2PAK; Ufmax: 1.76V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 130A Case: D2PAK Max. forward voltage: 1.76V Max. load current: 30A Leakage current: 15µA Reverse recovery time: 55ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STTH30R04G-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 400V; 30A; 100ns; D2PAK; Ufmax: 1.45V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 0.3kA Case: D2PAK Max. forward voltage: 1.45V Leakage current: 0.15mA Reverse recovery time: 100ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STTH30RQ06G-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 600V; 30A; 30ns; D2PAK; Ufmax: 2.95V; Ir: 40uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 180A Case: D2PAK Max. forward voltage: 2.95V Max. load current: 50A Leakage current: 40µA Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STTH30RQ06G2Y-TR | STMicroelectronics |
![]() Description: Diode: rectifying; SMD; 600V; 30A; 30ns; D2PAKHV; Ufmax: 2.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 180A Case: D2PAKHV Max. forward voltage: 2.95V Max. load current: 50A Leakage current: 40µA Reverse recovery time: 30ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STD10NF10T4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 9A; 50W; DPAK; ESD Mounting: SMD Drain-source voltage: 100V Drain current: 9A On-state resistance: 0.13Ω Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Case: DPAK Kind of package: reel; tape Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 2345 шт: термін постачання 21-30 дні (днів) |
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STP30NF10 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 25A; 115W Mounting: THT Drain-source voltage: 100V Drain current: 25A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 115W Polarisation: unipolar Case: TO220-3 Kind of package: tube Technology: STripFET™ II Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 361 шт: термін постачання 21-30 дні (днів) |
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STD25NF10T4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK; ESD Mounting: SMD Drain-source voltage: 100V Drain current: 21A On-state resistance: 38mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Case: DPAK Kind of package: reel; tape Version: ESD Technology: SuperMesh™ Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 4030 шт: термін постачання 21-30 дні (днів) |
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STD25NF10LA | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK Mounting: SMD Drain-source voltage: 100V Drain current: 21A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Case: DPAK Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±16V |
на замовлення 1825 шт: термін постачання 21-30 дні (днів) |
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TS1854IDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 656kHz; Ch: 4; SO14; 1.8÷6VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 656kHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 0.25V/μs Operating temperature: -40...125°C Input offset voltage: 6mV Voltage supply range: 1.8...6V DC Integrated circuit features: rail-to-rail; universal Kind of package: reel; tape Input bias current: 93nA Input offset current: 25nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TS1854IPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 656kHz; Ch: 4; TSSOP14; 1.8÷6VDC Type of integrated circuit: operational amplifier Bandwidth: 656kHz Mounting: SMT Number of channels: 4 Case: TSSOP14 Slew rate: 0.25V/μs Operating temperature: -40...125°C Input offset voltage: 6mV Voltage supply range: 1.8...6V DC Integrated circuit features: rail-to-rail; universal Kind of package: reel; tape Input bias current: 93nA Input offset current: 25nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
L3751PUR | STMicroelectronics |
![]() Description: IC: PMIC Type of integrated circuit: PMIC |
на замовлення 9036 шт: термін постачання 21-30 дні (днів) |
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STD5N52U | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 525V; 4.4A; Idm: 17.6A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 525V Drain current: 4.4A Pulsed drain current: 17.6A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 16.9nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2399 шт: термін постачання 21-30 дні (днів) |
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M24256-DRMN8TP/K | STMicroelectronics |
![]() Description: IC: EEPROM memory Type of integrated circuit: EEPROM memory |
на замовлення 6805 шт: термін постачання 21-30 дні (днів) |
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STM32F101ZFT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 36MHz; LQFP144; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 36MHz Mounting: SMD Number of inputs/outputs: 112 Case: LQFP144 Supply voltage: 2...3.6V DC Interface: I2C x2; SPI x3 Kind of architecture: Cortex M3 Memory: 80kB SRAM; 768kB FLASH Number of 16bit timers: 12 Family: STM32F1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
STM32F103ZFH6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; UFBGA144; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 112 Case: UFBGA144 Supply voltage: 2...3.6V DC Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB Kind of architecture: Cortex M3 Memory: 96kB SRAM; 768kB FLASH Number of 16bit timers: 14 Family: STM32F1 Number of 12bit A/D converters: 21 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Kind of package: in-tray Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STM32F103ZFH6TR | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; UFBGA144; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 112 Case: UFBGA144 Supply voltage: 2...3.6V DC Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB Kind of architecture: Cortex M3 Memory: 96kB SRAM; 768kB FLASH Number of 16bit timers: 14 Family: STM32F1 Number of 12bit A/D converters: 21 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Kind of package: reel; tape Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
TESEO-LIV3F | STMicroelectronics |
![]() Description: TESEO-LIV3F |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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TS7211AILT | STMicroelectronics |
![]() Description: IC: comparator; low-power; Cmp: 1; 2.7÷10V; SMT; SOT23-5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2.7...10V Mounting: SMT Case: SOT23-5 Operating temperature: -40...85°C Input offset voltage: 10mV Kind of package: reel; tape Input offset current: 0.3nA Kind of output: push-pull |
на замовлення 1145 шт: термін постачання 21-30 дні (днів) |
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TS7211BILT | STMicroelectronics |
![]() Description: IC: comparator; low-power; Cmp: 1; 2.7÷10V; SMT; SOT23; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2.7...10V Mounting: SMT Case: SOT23 Operating temperature: -40...85°C Input offset voltage: 18mV Kind of package: reel; tape Input offset current: 0.3nA Input bias current: 0.6nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPSC2H12D | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 1.2kV; 5A; TO220AC; Ufmax: 2.25V Mounting: THT Case: TO220AC Leakage current: 80µA Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Heatsink thickness: 1.23...1.32mm Kind of package: tube Max. load current: 10A Max. forward voltage: 2.25V Load current: 5A Semiconductor structure: single diode Max. forward impulse current: 15A |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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STPSC20065DI | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 650V; 20A; TO220AC; Ufmax: 1.65V Mounting: THT Case: TO220AC Leakage current: 2mA Max. off-state voltage: 650V Type of diode: Schottky rectifying Heatsink thickness: 1.23...1.32mm Kind of package: tube Max. load current: 40A Max. forward voltage: 1.65V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 0.4kA |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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TS464CPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 12MHz; 2.7÷10V; Ch: 4; TSSOP14; 200nA Type of integrated circuit: operational amplifier Bandwidth: 12MHz Operating voltage: 2.7...10V Mounting: SMT Number of channels: 4 Case: TSSOP14 Slew rate: 4V/μs Operating temperature: -20...70°C Input offset voltage: 7mV Integrated circuit features: rail-to-rail; universal Kind of package: reel; tape Input offset current: 200nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
IPS2050HQ-32 | STMicroelectronics |
![]() Description: IC: power switch Type of integrated circuit: power switch |
на замовлення 2600 шт: термін постачання 21-30 дні (днів) |
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MP34DT06JTR | STMicroelectronics |
![]() Description: MP34DT06JTR |
на замовлення 17189 шт: термін постачання 21-30 дні (днів) |
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IMP34DT05TR | STMicroelectronics |
![]() Description: IMP34DT05TR |
на замовлення 6995 шт: термін постачання 21-30 дні (днів) |
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STP95N4F3 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 23000 шт: термін постачання 21-30 дні (днів) |
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STP9NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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STL3N10F7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 2.4W Mounting: SMD Gate charge: 7.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 16A Case: PowerFLAT 2x2 Drain-source voltage: 100V Drain current: 4A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STL4N10F7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 18A; 35.7W Mounting: SMD Gate charge: 7.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 18A Case: PowerFLAT 3.3x3.3 Drain-source voltage: 100V Drain current: 4.5A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 35.7W Polarisation: unipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STL7N10F7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 28A; 50W Mounting: SMD Gate charge: 14nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 28A Case: PowerFLAT 3.3x3.3 Drain-source voltage: 100V Drain current: 7A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STL30N10F7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 120A; 4.8W Mounting: SMD Gate charge: 14nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 120A Case: PowerFLAT 5x6 Drain-source voltage: 100V Drain current: 30A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 4.8W Polarisation: unipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STL60N10F7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 48A; 72W Mounting: SMD Gate charge: 25nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 48A Case: PowerFLAT 5x6 Drain-source voltage: 100V Drain current: 46A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 72W Polarisation: unipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STL90N10F7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 100W Mounting: SMD Gate charge: 45nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 280A Case: PowerFLAT 5x6 Drain-source voltage: 100V Drain current: 70A On-state resistance: 8mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
STL100N10F7 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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STL160N10F8 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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STL92N10F7AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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TIP42C | STMicroelectronics |
![]() Description: Transistor: PNP; bipolar; 115V; 6A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 115V Collector current: 6A Case: TO220AB Mounting: THT Power dissipation: 65W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
STL15N65M5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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SM6T6V8CAY | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 6.8V; 57A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Max. forward impulse current: 57A Breakdown voltage: 6.8V Leakage current: 50µA Application: automotive industry |
на замовлення 2678 шт: термін постачання 21-30 дні (днів) |
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X0202NN 5BA4 | STMicroelectronics |
![]() Description: Thyristor; 800V; Ifmax: 1.25A; 0.8A; Igt: 200uA; SOT223; SMD Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 1.25A Load current: 0.8A Gate current: 0.2mA Case: SOT223 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 25A Features of semiconductor devices: sensitive gate |
на замовлення 1004 шт: термін постачання 21-30 дні (днів) |
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STM8S105S6T6C | STMicroelectronics |
![]() Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: LQFP44 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; ISO7846; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 1kB EEPROM; 2kB RAM; 32kB FLASH Number of 16bit timers: 3 Number of 8bit timers: 1 Number of PWM channels: 4 Number of 10bit A/D converters: 9 Family: STM8S |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STM8S105C4T6 | STMicroelectronics |
![]() ![]() Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: LQFP48 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; ISO7846; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH Number of 16bit timers: 3 Number of 8bit timers: 1 Number of PWM channels: 4 Number of 10bit A/D converters: 10 Family: STM8S |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STM8S105S6T3C | STMicroelectronics |
![]() Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: LQFP44 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; ISO7846; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 1kB EEPROM; 2kB RAM; 32kB FLASH Number of 16bit timers: 3 Number of 8bit timers: 1 Number of PWM channels: 4 Number of 10bit A/D converters: 9 Family: STM8S |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STM8S105C4T3 | STMicroelectronics |
![]() Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: LQFP48 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; ISO7846; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH Number of 16bit timers: 3 Number of 8bit timers: 1 Number of PWM channels: 4 Number of 10bit A/D converters: 10 Family: STM8S |
товару немає в наявності |
В кошику од. на суму грн. |
TSC2010IDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; SO8; 2.4mA; 4.5mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: 1
Mounting: SMT
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Voltage supply range: 2.7...5.5V DC
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; SO8; 2.4mA; 4.5mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: 1
Mounting: SMT
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Voltage supply range: 2.7...5.5V DC
Kind of integrated circuit: current sense
товару немає в наявності
В кошику
од. на суму грн.
TSC2010IYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; SO8; 2.4mA; 4.5mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: 1
Mounting: SMT
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Voltage supply range: 2.7...5.5V DC
Kind of integrated circuit: current sense
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; SO8; 2.4mA; 4.5mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: 1
Mounting: SMT
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Voltage supply range: 2.7...5.5V DC
Kind of integrated circuit: current sense
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
TSC2010IYST |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; miniSO8; 2.4mA; 4.5mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: 1
Mounting: SMT
Case: miniSO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Voltage supply range: 2.7...5.5V DC
Kind of integrated circuit: current sense
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; miniSO8; 2.4mA; 4.5mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: 1
Mounting: SMT
Case: miniSO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Voltage supply range: 2.7...5.5V DC
Kind of integrated circuit: current sense
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
TS951ILT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 8mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 80nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 8mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 80nA
на замовлення 980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.22 грн |
12+ | 34.10 грн |
25+ | 31.50 грн |
52+ | 17.43 грн |
141+ | 16.51 грн |
TS951IDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; SO8; 2.7÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 1.5mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 80nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; SO8; 2.7÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 1.5mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 80nA
товару немає в наявності
В кошику
од. на суму грн.
TS9511ILT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 1.5mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.15nA
Input offset current: 80nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 1.5mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.15nA
Input offset current: 80nA
товару немає в наявності
В кошику
од. на суму грн.
TS9511IYLT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 1.5mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 80nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 1.5mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 80nA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
TS9511RIYLT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 1.5mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 80nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 1.5mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 80nA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
TS951IYLT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 1.5mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 80nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 1.5mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 80nA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
TS951RIYLT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 1.5mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 80nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; SOT23-5; 2.7÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 1.5mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input bias current: 0.15µA
Input offset current: 80nA
Application: automotive industry
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В кошику
од. на суму грн.
STTH30RQ06G2-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 30ns; D2PAKHV; Ufmax: 2.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 180A
Case: D2PAKHV
Max. forward voltage: 2.95V
Max. load current: 50A
Leakage current: 40µA
Reverse recovery time: 30ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 30ns; D2PAKHV; Ufmax: 2.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 180A
Case: D2PAKHV
Max. forward voltage: 2.95V
Max. load current: 50A
Leakage current: 40µA
Reverse recovery time: 30ns
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STTH30RQ06DY |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO220AC; Ir: 40uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 2.95V
Max. load current: 50A
Leakage current: 40µA
Reverse recovery time: 30ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO220AC; Ir: 40uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 2.95V
Max. load current: 50A
Leakage current: 40µA
Reverse recovery time: 30ns
Application: automotive industry
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STTH30RQ06W |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; DO247; Ir: 40uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: DO247
Max. forward voltage: 2.95V
Max. load current: 50A
Leakage current: 40µA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; DO247; Ir: 40uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: DO247
Max. forward voltage: 2.95V
Max. load current: 50A
Leakage current: 40µA
Reverse recovery time: 30ns
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STTH30RQ06WL |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; DO247; Ir: 40uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: DO247
Max. forward voltage: 2.95V
Max. load current: 50A
Leakage current: 40µA
Reverse recovery time: 55ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; DO247; Ir: 40uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: DO247
Max. forward voltage: 2.95V
Max. load current: 50A
Leakage current: 40µA
Reverse recovery time: 55ns
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STTH3002CT |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 180A; TO220AB; 17ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: TO220AB
Max. forward voltage: 0.75V
Reverse recovery time: 17ns
Heatsink thickness: 1.23...1.32mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 180A; TO220AB; 17ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: TO220AB
Max. forward voltage: 0.75V
Reverse recovery time: 17ns
Heatsink thickness: 1.23...1.32mm
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STTH3002G-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 30A; 22ns; D2PAK; Ufmax: 0.77V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK
Max. forward voltage: 0.77V
Reverse recovery time: 22ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 30A; 22ns; D2PAK; Ufmax: 0.77V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK
Max. forward voltage: 0.77V
Reverse recovery time: 22ns
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STTH30L06CG-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15Ax2; 55ns; D2PAK; Ufmax: 1.76V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 130A
Case: D2PAK
Max. forward voltage: 1.76V
Max. load current: 30A
Leakage current: 15µA
Reverse recovery time: 55ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 15Ax2; 55ns; D2PAK; Ufmax: 1.76V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 130A
Case: D2PAK
Max. forward voltage: 1.76V
Max. load current: 30A
Leakage current: 15µA
Reverse recovery time: 55ns
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STTH30R04G-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 30A; 100ns; D2PAK; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK
Max. forward voltage: 1.45V
Leakage current: 0.15mA
Reverse recovery time: 100ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 30A; 100ns; D2PAK; Ufmax: 1.45V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK
Max. forward voltage: 1.45V
Leakage current: 0.15mA
Reverse recovery time: 100ns
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STTH30RQ06G-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 30ns; D2PAK; Ufmax: 2.95V; Ir: 40uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 180A
Case: D2PAK
Max. forward voltage: 2.95V
Max. load current: 50A
Leakage current: 40µA
Reverse recovery time: 30ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 30ns; D2PAK; Ufmax: 2.95V; Ir: 40uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 180A
Case: D2PAK
Max. forward voltage: 2.95V
Max. load current: 50A
Leakage current: 40µA
Reverse recovery time: 30ns
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STTH30RQ06G2Y-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 30ns; D2PAKHV; Ufmax: 2.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 180A
Case: D2PAKHV
Max. forward voltage: 2.95V
Max. load current: 50A
Leakage current: 40µA
Reverse recovery time: 30ns
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 30ns; D2PAKHV; Ufmax: 2.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 180A
Case: D2PAKHV
Max. forward voltage: 2.95V
Max. load current: 50A
Leakage current: 40µA
Reverse recovery time: 30ns
Application: automotive industry
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STD10NF10T4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; 50W; DPAK; ESD
Mounting: SMD
Drain-source voltage: 100V
Drain current: 9A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Case: DPAK
Kind of package: reel; tape
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; 50W; DPAK; ESD
Mounting: SMD
Drain-source voltage: 100V
Drain current: 9A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Case: DPAK
Kind of package: reel; tape
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 2345 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 103.74 грн |
9+ | 46.63 грн |
42+ | 21.48 грн |
115+ | 20.26 грн |
STP30NF10 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 25A; 115W
Mounting: THT
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Case: TO220-3
Kind of package: tube
Technology: STripFET™ II
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 25A; 115W
Mounting: THT
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Case: TO220-3
Kind of package: tube
Technology: STripFET™ II
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 361 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 121.85 грн |
6+ | 74.77 грн |
10+ | 68.96 грн |
25+ | 37.15 грн |
67+ | 35.17 грн |
STD25NF10T4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK; ESD
Mounting: SMD
Drain-source voltage: 100V
Drain current: 21A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Case: DPAK
Kind of package: reel; tape
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK; ESD
Mounting: SMD
Drain-source voltage: 100V
Drain current: 21A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Case: DPAK
Kind of package: reel; tape
Version: ESD
Technology: SuperMesh™
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 4030 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 106.21 грн |
10+ | 69.57 грн |
27+ | 33.87 грн |
73+ | 32.03 грн |
STD25NF10LA |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK
Mounting: SMD
Drain-source voltage: 100V
Drain current: 21A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Case: DPAK
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 100W; DPAK
Mounting: SMD
Drain-source voltage: 100V
Drain current: 21A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Case: DPAK
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±16V
на замовлення 1825 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 130.08 грн |
5+ | 104.73 грн |
10+ | 90.97 грн |
27+ | 86.39 грн |
500+ | 83.33 грн |
TS1854IDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 656kHz; Ch: 4; SO14; 1.8÷6VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 656kHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 0.25V/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...6V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 93nA
Input offset current: 25nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 656kHz; Ch: 4; SO14; 1.8÷6VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 656kHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 0.25V/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...6V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 93nA
Input offset current: 25nA
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TS1854IPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 656kHz; Ch: 4; TSSOP14; 1.8÷6VDC
Type of integrated circuit: operational amplifier
Bandwidth: 656kHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 0.25V/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...6V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 93nA
Input offset current: 25nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 656kHz; Ch: 4; TSSOP14; 1.8÷6VDC
Type of integrated circuit: operational amplifier
Bandwidth: 656kHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 0.25V/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...6V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 93nA
Input offset current: 25nA
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L3751PUR |
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Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 9036 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 149.02 грн |
STD5N52U |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 525V; 4.4A; Idm: 17.6A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 525V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 16.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 525V; 4.4A; Idm: 17.6A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 525V
Drain current: 4.4A
Pulsed drain current: 17.6A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 16.9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2399 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 79.04 грн |
10+ | 61.92 грн |
19+ | 47.40 грн |
52+ | 45.10 грн |
M24256-DRMN8TP/K |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
на замовлення 6805 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 33.51 грн |
STM32F101ZFT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 36MHz; LQFP144; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 36MHz
Mounting: SMD
Number of inputs/outputs: 112
Case: LQFP144
Supply voltage: 2...3.6V DC
Interface: I2C x2; SPI x3
Kind of architecture: Cortex M3
Memory: 80kB SRAM; 768kB FLASH
Number of 16bit timers: 12
Family: STM32F1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 36MHz; LQFP144; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 36MHz
Mounting: SMD
Number of inputs/outputs: 112
Case: LQFP144
Supply voltage: 2...3.6V DC
Interface: I2C x2; SPI x3
Kind of architecture: Cortex M3
Memory: 80kB SRAM; 768kB FLASH
Number of 16bit timers: 12
Family: STM32F1
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STM32F103ZFH6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFBGA144; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 112
Case: UFBGA144
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Memory: 96kB SRAM; 768kB FLASH
Number of 16bit timers: 14
Family: STM32F1
Number of 12bit A/D converters: 21
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: in-tray
Operating temperature: -40...85°C
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFBGA144; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 112
Case: UFBGA144
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Memory: 96kB SRAM; 768kB FLASH
Number of 16bit timers: 14
Family: STM32F1
Number of 12bit A/D converters: 21
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: in-tray
Operating temperature: -40...85°C
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STM32F103ZFH6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFBGA144; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 112
Case: UFBGA144
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Memory: 96kB SRAM; 768kB FLASH
Number of 16bit timers: 14
Family: STM32F1
Number of 12bit A/D converters: 21
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFBGA144; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 112
Case: UFBGA144
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SDIO; SPI x3; USART x5; USB
Kind of architecture: Cortex M3
Memory: 96kB SRAM; 768kB FLASH
Number of 16bit timers: 14
Family: STM32F1
Number of 12bit A/D converters: 21
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
Operating temperature: -40...85°C
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TESEO-LIV3F |
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на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 982.19 грн |
TS7211AILT |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2.7÷10V; SMT; SOT23-5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2.7...10V
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...85°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 0.3nA
Kind of output: push-pull
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2.7÷10V; SMT; SOT23-5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2.7...10V
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...85°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 0.3nA
Kind of output: push-pull
на замовлення 1145 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 95.50 грн |
10+ | 64.06 грн |
25+ | 58.79 грн |
26+ | 34.78 грн |
71+ | 32.87 грн |
TS7211BILT |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2.7÷10V; SMT; SOT23; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2.7...10V
Mounting: SMT
Case: SOT23
Operating temperature: -40...85°C
Input offset voltage: 18mV
Kind of package: reel; tape
Input offset current: 0.3nA
Input bias current: 0.6nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2.7÷10V; SMT; SOT23; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2.7...10V
Mounting: SMT
Case: SOT23
Operating temperature: -40...85°C
Input offset voltage: 18mV
Kind of package: reel; tape
Input offset current: 0.3nA
Input bias current: 0.6nA
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STPSC2H12D |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 1.2kV; 5A; TO220AC; Ufmax: 2.25V
Mounting: THT
Case: TO220AC
Leakage current: 80µA
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Kind of package: tube
Max. load current: 10A
Max. forward voltage: 2.25V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 15A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 1.2kV; 5A; TO220AC; Ufmax: 2.25V
Mounting: THT
Case: TO220AC
Leakage current: 80µA
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Kind of package: tube
Max. load current: 10A
Max. forward voltage: 2.25V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 15A
на замовлення 13 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 174.54 грн |
5+ | 145.25 грн |
8+ | 116.20 грн |
STPSC20065DI |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 20A; TO220AC; Ufmax: 1.65V
Mounting: THT
Case: TO220AC
Leakage current: 2mA
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Kind of package: tube
Max. load current: 40A
Max. forward voltage: 1.65V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 0.4kA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 20A; TO220AC; Ufmax: 1.65V
Mounting: THT
Case: TO220AC
Leakage current: 2mA
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Kind of package: tube
Max. load current: 40A
Max. forward voltage: 1.65V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 0.4kA
на замовлення 43 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 528.56 грн |
3+ | 352.43 грн |
7+ | 332.55 грн |
TS464CPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 12MHz; 2.7÷10V; Ch: 4; TSSOP14; 200nA
Type of integrated circuit: operational amplifier
Bandwidth: 12MHz
Operating voltage: 2.7...10V
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 4V/μs
Operating temperature: -20...70°C
Input offset voltage: 7mV
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 12MHz; 2.7÷10V; Ch: 4; TSSOP14; 200nA
Type of integrated circuit: operational amplifier
Bandwidth: 12MHz
Operating voltage: 2.7...10V
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 4V/μs
Operating temperature: -20...70°C
Input offset voltage: 7mV
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input offset current: 200nA
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IPS2050HQ-32 |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 2600 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 322.73 грн |
MP34DT06JTR |
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на замовлення 17189 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4000+ | 27.66 грн |
IMP34DT05TR |
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на замовлення 6995 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4000+ | 121.85 грн |
STP95N4F3 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 23000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 83.98 грн |
STP9NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 83.15 грн |
STL3N10F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 2.4W
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 16A
Case: PowerFLAT 2x2
Drain-source voltage: 100V
Drain current: 4A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 2.4W
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 16A
Case: PowerFLAT 2x2
Drain-source voltage: 100V
Drain current: 4A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
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STL4N10F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 18A; 35.7W
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 18A
Case: PowerFLAT 3.3x3.3
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 35.7W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 18A; 35.7W
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 18A
Case: PowerFLAT 3.3x3.3
Drain-source voltage: 100V
Drain current: 4.5A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 35.7W
Polarisation: unipolar
Kind of package: reel; tape
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STL7N10F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 28A; 50W
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 28A
Case: PowerFLAT 3.3x3.3
Drain-source voltage: 100V
Drain current: 7A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 28A; 50W
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 28A
Case: PowerFLAT 3.3x3.3
Drain-source voltage: 100V
Drain current: 7A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
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STL30N10F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 120A; 4.8W
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PowerFLAT 5x6
Drain-source voltage: 100V
Drain current: 30A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 4.8W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 120A; 4.8W
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PowerFLAT 5x6
Drain-source voltage: 100V
Drain current: 30A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 4.8W
Polarisation: unipolar
Kind of package: reel; tape
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STL60N10F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 48A; 72W
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: PowerFLAT 5x6
Drain-source voltage: 100V
Drain current: 46A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 72W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 48A; 72W
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 48A
Case: PowerFLAT 5x6
Drain-source voltage: 100V
Drain current: 46A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 72W
Polarisation: unipolar
Kind of package: reel; tape
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STL90N10F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 100W
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 280A
Case: PowerFLAT 5x6
Drain-source voltage: 100V
Drain current: 70A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 100W
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 280A
Case: PowerFLAT 5x6
Drain-source voltage: 100V
Drain current: 70A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: reel; tape
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STL100N10F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 105.38 грн |
STL160N10F8 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 139.14 грн |
STL92N10F7AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 88.09 грн |
TIP42C |
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Виробник: STMicroelectronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 115V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220AB
Mounting: THT
Power dissipation: 65W
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 115V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220AB
Mounting: THT
Power dissipation: 65W
Kind of package: tube
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STL15N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 120.20 грн |
SM6T6V8CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Max. forward impulse current: 57A
Breakdown voltage: 6.8V
Leakage current: 50µA
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Max. forward impulse current: 57A
Breakdown voltage: 6.8V
Leakage current: 50µA
Application: automotive industry
на замовлення 2678 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 53.51 грн |
10+ | 39.37 грн |
96+ | 9.33 грн |
262+ | 8.87 грн |
X0202NN 5BA4 |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 1.25A; 0.8A; Igt: 200uA; SOT223; SMD
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 0.2mA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 1.25A; 0.8A; Igt: 200uA; SOT223; SMD
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 1.25A
Load current: 0.8A
Gate current: 0.2mA
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
на замовлення 1004 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 37.87 грн |
18+ | 22.02 грн |
73+ | 12.23 грн |
201+ | 11.54 грн |
STM8S105S6T6C |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP44
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; ISO7846; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 32kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 9
Family: STM8S
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP44
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; ISO7846; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 32kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 9
Family: STM8S
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STM8S105C4T6 | ![]() |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP48
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; ISO7846; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Family: STM8S
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP48
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; ISO7846; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Family: STM8S
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STM8S105S6T3C |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP44
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; ISO7846; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 32kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 9
Family: STM8S
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP44
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; ISO7846; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 32kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 9
Family: STM8S
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STM8S105C4T3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP48
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; ISO7846; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Family: STM8S
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP48; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP48
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; ISO7846; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 10
Family: STM8S
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