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LBP01-0803SC5 LBP01-0803SC5 STMicroelectronics dm00051031.pdf Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+14.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
LET16045C LET16045C STMicroelectronics en.DM00038659.pdf Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 9A
Frequency: 1.6GHz
Power - Output: 45W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
товару немає в наявності
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LET16060C LET16060C STMicroelectronics en.DM00038953.pdf Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 12A
Frequency: 1.6GHz
Power - Output: 60W
Gain: 13.8dB
Technology: LDMOS
Supplier Device Package: M243
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
товару немає в наявності
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STF15N65M5 STF15N65M5 STMicroelectronics en.DM00049306.pdf Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товару немає в наявності
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STF18N65M5 STF18N65M5 STMicroelectronics en.DM00049722.pdf Description: MOSFET N-CH 650V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
товару немає в наявності
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STF31N65M5 STF31N65M5 STMicroelectronics en.DM00049148.pdf Description: MOSFET N-CH 650V 22A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
на замовлення 1051 шт:
термін постачання 21-31 дні (днів)
1+334.69 грн
50+167.44 грн
100+152.49 грн
500+118.52 грн
1000+110.96 грн
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STF38N65M5 STF38N65M5 STMicroelectronics en.DM00113621.pdf Description: MOSFET N-CH 650V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)
1+430.31 грн
50+220.31 грн
100+201.60 грн
500+158.46 грн
1000+155.31 грн
В кошику  од. на суму  грн.
STF57N65M5 STF57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
на замовлення 1078 шт:
термін постачання 21-31 дні (днів)
1+712.49 грн
50+380.86 грн
100+351.46 грн
500+281.54 грн
1000+276.99 грн
В кошику  од. на суму  грн.
STGFW30NC60V STGFW30NC60V STMicroelectronics STGFW30NC60V.pdf Description: IGBT 600V 36A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 80 W
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STGW60H65DF STGW60H65DF STMicroelectronics Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 67ns/165ns
Switching Energy: 1.5mJ (on), 1.1mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 206 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 360 W
товару немає в наявності
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STI11NM80 STI11NM80 STMicroelectronics en.CD00003205.pdf Description: MOSFET N-CH 800V 11A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK (TO-262)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STI57N65M5 STI57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
товару немає в наявності
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STP11NM65N STP11NM65N STMicroelectronics en.CD00158685.pdf Description: MOSFET N-CH 650V 11A TO-220
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
товару немає в наявності
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STP31N65M5 STP31N65M5 STMicroelectronics en.DM00049148.pdf Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
на замовлення 319 шт:
термін постачання 21-31 дні (днів)
2+312.74 грн
50+155.35 грн
100+141.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP34N65M5 STP34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
товару немає в наявності
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STP38N65M5 STP38N65M5 STMicroelectronics en.DM00049157.pdf Description: MOSFET N-CH 650V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
1+396.61 грн
50+201.62 грн
100+184.21 грн
500+144.26 грн
В кошику  од. на суму  грн.
STPS20M120SR STPS20M120SR STMicroelectronics en.DM00050162.pdf Description: DIODE SCHOTTKY 120V 20A I2PAK
на замовлення 761 шт:
термін постачання 21-31 дні (днів)
3+141.87 грн
10+122.95 грн
100+98.82 грн
500+76.20 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STPS20SM120SR STPS20SM120SR STMicroelectronics en.DM00050163.pdf Description: DIODE SCHOTTKY 120V 20A I2PAK
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: I2PAK
Current - Average Rectified (Io): 20A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
на замовлення 1909 шт:
термін постачання 21-31 дні (днів)
3+123.84 грн
10+106.88 грн
100+83.33 грн
500+64.60 грн
1000+51.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STPS30M120SR STPS30M120SR STMicroelectronics power-schottky-medium-vf-and-ir.html Description: DIODE SCHOTTKY 120V 30A I2PAK
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: I2PAK
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STPS30SM120SR STPS30SM120SR STMicroelectronics en.DM00050160.pdf Description: DIODE SCHOTTKY 120V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
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STPS40M120CR STPS40M120CR STMicroelectronics en.DM00050153.pdf Description: DIODE ARRAY SCHOT 120V 20A I2PAK
Current - Reverse Leakage @ Vr: 370 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: I2PAK
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STPS40SM120CR STPS40SM120CR STMicroelectronics en.DM00050154.pdf Description: DIODE ARRAY SCHOTTKY 120V I2PAK
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Last Time Buy
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: I2PAK
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
3+153.63 грн
10+133.22 грн
100+107.06 грн
500+82.54 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STPS40SM120CT STPS40SM120CT STMicroelectronics en.DM00050154.pdf Description: DIODE ARRAY SCHOTTKY 120V TO220
на замовлення 967 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STW31N65M5 STW31N65M5 STMicroelectronics en.DM00049148.pdf Description: MOSFET N-CH 650V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
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STW34N65M5 STW34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
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STW38N65M5 STW38N65M5 STMicroelectronics en.DM00049157.pdf Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
1+521.24 грн
30+290.84 грн
120+244.49 грн
В кошику  од. на суму  грн.
STW57N65M5 STW57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
на замовлення 443 шт:
термін постачання 21-31 дні (днів)
1+808.90 грн
30+465.63 грн
120+396.97 грн
В кошику  од. на суму  грн.
LBP01-0810B LBP01-0810B STMicroelectronics dm00051031.pdf Description: LIGHT PROTECT LED SHUNT 15V SMD
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SMB
Technology: LED Shunt
Applications: LED Protection
Mounting Type: Surface Mount
Voltage: 15V
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
на замовлення 5350 шт:
термін постачання 21-31 дні (днів)
10+34.49 грн
13+23.55 грн
25+21.01 грн
100+17.15 грн
250+15.92 грн
500+15.18 грн
1000+14.33 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
STB18N65M5 STB18N65M5 STMicroelectronics stb18n65m5.pdf Description: MOSFET N-CH 650V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
на замовлення 770 шт:
термін постачання 21-31 дні (днів)
2+259.44 грн
10+163.56 грн
100+114.36 грн
500+87.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STB34N65M5 STB34N65M5 STMicroelectronics en.DM00049181.pdf Description: MOSFET N-CH 650V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
1+470.29 грн
10+304.78 грн
100+220.90 грн
В кошику  од. на суму  грн.
STB38N65M5 STB38N65M5 STMicroelectronics en.DM00049157.pdf Description: MOSFET N-CH 650V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
на замовлення 979 шт:
термін постачання 21-31 дні (днів)
1+462.45 грн
10+300.71 грн
100+223.29 грн
В кошику  од. на суму  грн.
STB57N65M5 STB57N65M5 STMicroelectronics en.DM00049152.pdf Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
на замовлення 5569 шт:
термін постачання 21-31 дні (днів)
1+783.03 грн
10+521.25 грн
100+408.26 грн
В кошику  од. на суму  грн.
STD18N65M5 STD18N65M5 STMicroelectronics stb18n65m5.pdf Description: MOSFET N-CH 650V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
на замовлення 5885 шт:
термін постачання 21-31 дні (днів)
2+248.47 грн
10+156.24 грн
100+108.97 грн
500+83.29 грн
1000+82.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STD3NM60N STD3NM60N STMicroelectronics en.DM00052307.pdf Description: MOSFET N-CH 600V 3.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V
товару немає в наявності
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STD8NF25 STD8NF25 STMicroelectronics en.DM00024719.pdf Description: MOSFET N-CH 250V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3098 шт:
термін постачання 21-31 дні (днів)
4+87.00 грн
10+52.91 грн
100+34.95 грн
500+25.55 грн
1000+23.22 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STPS5L60SY STPS5L60SY STMicroelectronics en.DM00051039.pdf Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
на замовлення 10513 шт:
термін постачання 21-31 дні (днів)
5+77.60 грн
10+46.87 грн
100+30.69 грн
500+22.27 грн
1000+20.16 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
3STL2540 3STL2540 STMicroelectronics DM00035034.pdf Description: TRANS PNP 40V 5A POWERFLAT3
на замовлення 9212 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
LBP01-0803SC5 LBP01-0803SC5 STMicroelectronics dm00051031.pdf Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
на замовлення 5141 шт:
термін постачання 21-31 дні (днів)
10+32.92 грн
14+22.34 грн
25+19.99 грн
100+16.28 грн
250+15.12 грн
500+14.41 грн
1000+13.60 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
3STL2540 3STL2540 STMicroelectronics DM00035034.pdf Description: TRANS PNP 40V 5A POWERFLAT3
товару немає в наявності
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L78L05ABZ-TR L78L05ABZ-TR STMicroelectronics l78l.pdf Description: IC REG LINEAR 5V 100MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 49dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
на замовлення 21363 шт:
термін постачання 21-31 дні (днів)
13+24.30 грн
19+16.30 грн
25+14.52 грн
100+11.75 грн
250+10.86 грн
500+10.32 грн
1000+9.72 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
Q7096718 Q7096718 STMicroelectronics Description: KIT HIGH POWER MOSFET 12VALUES
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
Q7096737 Q7096737 STMicroelectronics Description: KIT WIDE INPUT MOSFET 12VALUES
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
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L6360TR L6360TR STMicroelectronics en.DM00048565.pdf Description: IC TRANSCEIVER 1/1 26VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 26-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 18V ~ 32.5V
Number of Drivers/Receivers: 1/1
Protocol: IO-Link
Part Status: Active
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L6360TR L6360TR STMicroelectronics en.DM00048565.pdf Description: IC TRANSCEIVER 1/1 26VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 26-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 18V ~ 32.5V
Number of Drivers/Receivers: 1/1
Protocol: IO-Link
Part Status: Active
на замовлення 1429 шт:
термін постачання 21-31 дні (днів)
1+321.36 грн
10+234.96 грн
25+216.41 грн
100+183.98 грн
250+175.11 грн
В кошику  од. на суму  грн.
STPS40M120CTN STPS40M120CTN STMicroelectronics en.DM00050153.pdf Description: DIODE ARR SCHOTT 120V 20A TO220
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 370 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
товару немає в наявності
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STPS30M120STN STPS30M120STN STMicroelectronics power-schottky-medium-vf-and-ir.html Description: DIODE SCHOTTKY 120V 30A TO220AB
товару немає в наявності
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STPS30SM120STN STPS30SM120STN STMicroelectronics en.DM00050160.pdf Description: DIODE SCHOTTKY 120V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AB Narrow Leads
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
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SPBT2532C2.AT2 SPBT2532C2.AT2 STMicroelectronics SPBT2532C2.AT2_ds.pdf Description: RF TXRX MODULE BLUETOOTH SMD
Part Status: Obsolete
Serial Interfaces: I²C, I²S, SPI, UART
RF Family/Standard: Bluetooth
Utilized IC / Part: STLC2500DB
Antenna Type: Antenna Not Included
Protocol: Bluetooth v2.1 +EDR, Class 2
Data Rate: 2Mbps
Power - Output: 2dBm
Voltage - Supply: 3.3V
Operating Temperature: -40°C ~ 85°C
Memory Size: 256kB Flash, 48kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -85dBm
Package / Case: Module
Packaging: Tray
товару немає в наявності
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SPBT2632C2A.AT2 SPBT2632C2A.AT2 STMicroelectronics wireless-transceivers-mcus-and-modules.html Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Power - Output: 0dBm
Data Rate: 560kbps
Protocol: Bluetooth v3.1
Current - Receiving: 2.7mA
Current - Transmitting: 11.2mA
Antenna Type: Integrated, Chip
Utilized IC / Part: STLC2690
RF Family/Standard: Bluetooth
Serial Interfaces: UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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SPBT2632C1A.AT2 SPBT2632C1A.AT2 STMicroelectronics wireless-connectivity.html Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Power - Output: 10dBm
Data Rate: 560kbps
Protocol: Bluetooth v3.0
Current - Receiving: 4.2mA
Current - Transmitting: 7mA
Antenna Type: Integrated, Chip
Utilized IC / Part: STLC2690
RF Family/Standard: Bluetooth
Serial Interfaces: UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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STF11N65M5 STF11N65M5 STMicroelectronics en.DM00049307.pdf Description: MOSFET N-CH 650V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 100 V
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STL8DN6LF3 STL8DN6LF3 STMicroelectronics en.DM00039155.pdf Description: MOSFET 2N-CH 60V 20A POWERFLAT
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A
Drain to Source Voltage (Vdss): 60V
Power - Max: 65W
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+60.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STPSC6H065B-TR STPSC6H065B-TR STMicroelectronics en.DM00056349.pdf Description: DIODE SIL CARBIDE 650V 6A DPAK
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+67.66 грн
5000+65.08 грн
Мінімальне замовлення: 2500
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STFI34N65M5 STFI34N65M5 STMicroelectronics STF%2CFI34N65M5.pdf Description: MOSFET N CH 650V 28A I2PAKFP
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-281 (I2PAKFP)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I2PAK
Packaging: Tube
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STEVAL-ILL035V1 STEVAL-ILL035V1 STMicroelectronics en.DM00055252.pdf Description: EVAL BOARD FOR LED7708
Part Status: Active
Outputs and Type: 16, Non-Isolated
Supplied Contents: Board(s)
Utilized IC / Part: LED7708
Current - Output / Channel: 85mA
Voltage - Input: 10V ~ 28V
Features: Dimmable
Packaging: Bulk
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STPSC6H065G-TR STPSC6H065G-TR STMicroelectronics en.DM00056349.pdf Description: DIODE SIL CARBIDE 650V 6A D2PAK
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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STGIPS35K60L1 STGIPS35K60L1 STMicroelectronics STGIPS35K60L1.pdf Description: MODULE IPM SLLIMM SDIP-22L
Voltage: 600 V
Current: 35 A
Voltage - Isolation: 2500Vrms
Configuration: 1 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 22-PowerDIP Module (0.993", 25.23mm)
Packaging: Tube
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STTH20L03CG-TR STTH20L03CG-TR STMicroelectronics en.DM00053149.pdf Description: DIODE ARRAY GP 300V 10A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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STGIPS40W60L1 STGIPS40W60L1 STMicroelectronics STGIPS40W60L1.pdf Description: MODULE IPM SLLIMM SDIP-22L
Voltage: 600 V
Current: 40 A
Voltage - Isolation: 2500Vrms
Configuration: 1 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 22-PowerDIP Module (0.993", 25.23mm)
Packaging: Tube
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TDA7498ETR TDA7498ETR STMicroelectronics TDA7498E.pdf Description: IC AMP D MONO/STER 220W PWRSSO36
Packaging: Tape & Reel (TR)
Features: Differential Inputs, Mute, Short-Circuit and Thermal Protection, Standby
Package / Case: 36-PowerFSOP (0.295", 7.50mm Width)
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 14V ~ 36V
Max Output Power x Channels @ Load: 220W x 1 @ 3Ohm; 160W x 2 @ 4Ohm
Supplier Device Package: PowerSSO-36 EPU
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1000+302.55 грн
2000+285.35 грн
Мінімальне замовлення: 1000
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LBP01-0803SC5 dm00051031.pdf
LBP01-0803SC5
Виробник: STMicroelectronics
Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+14.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
LET16045C en.DM00038659.pdf
LET16045C
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 9A
Frequency: 1.6GHz
Power - Output: 45W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
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LET16060C en.DM00038953.pdf
LET16060C
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 12A
Frequency: 1.6GHz
Power - Output: 60W
Gain: 13.8dB
Technology: LDMOS
Supplier Device Package: M243
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
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STF15N65M5 en.DM00049306.pdf
STF15N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
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STF18N65M5 en.DM00049722.pdf
STF18N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
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STF31N65M5 en.DM00049148.pdf
STF31N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 22A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
на замовлення 1051 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+334.69 грн
50+167.44 грн
100+152.49 грн
500+118.52 грн
1000+110.96 грн
В кошику  од. на суму  грн.
STF38N65M5 en.DM00113621.pdf
STF38N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+430.31 грн
50+220.31 грн
100+201.60 грн
500+158.46 грн
1000+155.31 грн
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STF57N65M5 en.DM00049152.pdf
STF57N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 42A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
на замовлення 1078 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+712.49 грн
50+380.86 грн
100+351.46 грн
500+281.54 грн
1000+276.99 грн
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STGFW30NC60V STGFW30NC60V.pdf
STGFW30NC60V
Виробник: STMicroelectronics
Description: IGBT 600V 36A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 31ns/100ns
Switching Energy: 220µJ (on), 330µJ (off)
Test Condition: 390V, 20A, 3.3Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 80 W
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STGW60H65DF
STGW60H65DF
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 67ns/165ns
Switching Energy: 1.5mJ (on), 1.1mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 206 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 360 W
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STI11NM80 en.CD00003205.pdf
STI11NM80
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 11A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK (TO-262)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STI57N65M5 en.DM00049152.pdf
STI57N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 42A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STP11NM65N en.CD00158685.pdf
STP11NM65N
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 11A TO-220
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
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STP31N65M5 en.DM00049148.pdf
STP31N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
на замовлення 319 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+312.74 грн
50+155.35 грн
100+141.29 грн
Мінімальне замовлення: 2
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STP34N65M5 en.DM00049181.pdf
STP34N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
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STP38N65M5 en.DM00049157.pdf
STP38N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+396.61 грн
50+201.62 грн
100+184.21 грн
500+144.26 грн
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STPS20M120SR en.DM00050162.pdf
STPS20M120SR
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 120V 20A I2PAK
на замовлення 761 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.87 грн
10+122.95 грн
100+98.82 грн
500+76.20 грн
Мінімальне замовлення: 3
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STPS20SM120SR en.DM00050163.pdf
STPS20SM120SR
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 120V 20A I2PAK
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: I2PAK
Current - Average Rectified (Io): 20A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
на замовлення 1909 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+123.84 грн
10+106.88 грн
100+83.33 грн
500+64.60 грн
1000+51.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STPS30M120SR power-schottky-medium-vf-and-ir.html
STPS30M120SR
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 120V 30A I2PAK
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: I2PAK
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STPS30SM120SR en.DM00050160.pdf
STPS30SM120SR
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 120V 30A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
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STPS40M120CR en.DM00050153.pdf
STPS40M120CR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOT 120V 20A I2PAK
Current - Reverse Leakage @ Vr: 370 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: I2PAK
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STPS40SM120CR en.DM00050154.pdf
STPS40SM120CR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 120V I2PAK
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Last Time Buy
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: I2PAK
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+153.63 грн
10+133.22 грн
100+107.06 грн
500+82.54 грн
Мінімальне замовлення: 3
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STPS40SM120CT en.DM00050154.pdf
STPS40SM120CT
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 120V TO220
на замовлення 967 шт:
термін постачання 21-31 дні (днів)
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STW31N65M5 en.DM00049148.pdf
STW31N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V
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STW34N65M5 en.DM00049181.pdf
STW34N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 28A TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
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STW38N65M5 en.DM00049157.pdf
STW38N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+521.24 грн
30+290.84 грн
120+244.49 грн
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STW57N65M5 en.DM00049152.pdf
STW57N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
на замовлення 443 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+808.90 грн
30+465.63 грн
120+396.97 грн
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LBP01-0810B dm00051031.pdf
LBP01-0810B
Виробник: STMicroelectronics
Description: LIGHT PROTECT LED SHUNT 15V SMD
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SMB
Technology: LED Shunt
Applications: LED Protection
Mounting Type: Surface Mount
Voltage: 15V
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
на замовлення 5350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+34.49 грн
13+23.55 грн
25+21.01 грн
100+17.15 грн
250+15.92 грн
500+15.18 грн
1000+14.33 грн
Мінімальне замовлення: 10
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STB18N65M5 stb18n65m5.pdf
STB18N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
на замовлення 770 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+259.44 грн
10+163.56 грн
100+114.36 грн
500+87.98 грн
Мінімальне замовлення: 2
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STB34N65M5 en.DM00049181.pdf
STB34N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+470.29 грн
10+304.78 грн
100+220.90 грн
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STB38N65M5 en.DM00049157.pdf
STB38N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
на замовлення 979 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+462.45 грн
10+300.71 грн
100+223.29 грн
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STB57N65M5 en.DM00049152.pdf
STB57N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
на замовлення 5569 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+783.03 грн
10+521.25 грн
100+408.26 грн
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STD18N65M5 stb18n65m5.pdf
STD18N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
на замовлення 5885 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+248.47 грн
10+156.24 грн
100+108.97 грн
500+83.29 грн
1000+82.90 грн
Мінімальне замовлення: 2
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STD3NM60N en.DM00052307.pdf
STD3NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 3.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50 V
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STD8NF25 en.DM00024719.pdf
STD8NF25
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3098 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.00 грн
10+52.91 грн
100+34.95 грн
500+25.55 грн
1000+23.22 грн
Мінімальне замовлення: 4
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STPS5L60SY en.DM00051039.pdf
STPS5L60SY
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
на замовлення 10513 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+77.60 грн
10+46.87 грн
100+30.69 грн
500+22.27 грн
1000+20.16 грн
Мінімальне замовлення: 5
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3STL2540 DM00035034.pdf
3STL2540
Виробник: STMicroelectronics
Description: TRANS PNP 40V 5A POWERFLAT3
на замовлення 9212 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
LBP01-0803SC5 dm00051031.pdf
LBP01-0803SC5
Виробник: STMicroelectronics
Description: LIGHT PROTECT LED SHUNT 15V SMD
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Voltage: 15V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
на замовлення 5141 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.92 грн
14+22.34 грн
25+19.99 грн
100+16.28 грн
250+15.12 грн
500+14.41 грн
1000+13.60 грн
Мінімальне замовлення: 10
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3STL2540 DM00035034.pdf
3STL2540
Виробник: STMicroelectronics
Description: TRANS PNP 40V 5A POWERFLAT3
товару немає в наявності
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L78L05ABZ-TR l78l.pdf
L78L05ABZ-TR
Виробник: STMicroelectronics
Description: IC REG LINEAR 5V 100MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 49dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
на замовлення 21363 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+24.30 грн
19+16.30 грн
25+14.52 грн
100+11.75 грн
250+10.86 грн
500+10.32 грн
1000+9.72 грн
Мінімальне замовлення: 13
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Q7096718
Q7096718
Виробник: STMicroelectronics
Description: KIT HIGH POWER MOSFET 12VALUES
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
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Q7096737
Q7096737
Виробник: STMicroelectronics
Description: KIT WIDE INPUT MOSFET 12VALUES
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
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L6360TR en.DM00048565.pdf
L6360TR
Виробник: STMicroelectronics
Description: IC TRANSCEIVER 1/1 26VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 26-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 18V ~ 32.5V
Number of Drivers/Receivers: 1/1
Protocol: IO-Link
Part Status: Active
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L6360TR en.DM00048565.pdf
L6360TR
Виробник: STMicroelectronics
Description: IC TRANSCEIVER 1/1 26VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 26-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 18V ~ 32.5V
Number of Drivers/Receivers: 1/1
Protocol: IO-Link
Part Status: Active
на замовлення 1429 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+321.36 грн
10+234.96 грн
25+216.41 грн
100+183.98 грн
250+175.11 грн
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STPS40M120CTN en.DM00050153.pdf
STPS40M120CTN
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 120V 20A TO220
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 370 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
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STPS30M120STN power-schottky-medium-vf-and-ir.html
STPS30M120STN
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 120V 30A TO220AB
товару немає в наявності
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STPS30SM120STN en.DM00050160.pdf
STPS30SM120STN
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 120V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AB Narrow Leads
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
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SPBT2532C2.AT2 SPBT2532C2.AT2_ds.pdf
SPBT2532C2.AT2
Виробник: STMicroelectronics
Description: RF TXRX MODULE BLUETOOTH SMD
Part Status: Obsolete
Serial Interfaces: I²C, I²S, SPI, UART
RF Family/Standard: Bluetooth
Utilized IC / Part: STLC2500DB
Antenna Type: Antenna Not Included
Protocol: Bluetooth v2.1 +EDR, Class 2
Data Rate: 2Mbps
Power - Output: 2dBm
Voltage - Supply: 3.3V
Operating Temperature: -40°C ~ 85°C
Memory Size: 256kB Flash, 48kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -85dBm
Package / Case: Module
Packaging: Tray
товару немає в наявності
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SPBT2632C2A.AT2 wireless-transceivers-mcus-and-modules.html
SPBT2632C2A.AT2
Виробник: STMicroelectronics
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Power - Output: 0dBm
Data Rate: 560kbps
Protocol: Bluetooth v3.1
Current - Receiving: 2.7mA
Current - Transmitting: 11.2mA
Antenna Type: Integrated, Chip
Utilized IC / Part: STLC2690
RF Family/Standard: Bluetooth
Serial Interfaces: UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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SPBT2632C1A.AT2 wireless-connectivity.html
SPBT2632C1A.AT2
Виробник: STMicroelectronics
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 48kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Power - Output: 10dBm
Data Rate: 560kbps
Protocol: Bluetooth v3.0
Current - Receiving: 4.2mA
Current - Transmitting: 7mA
Antenna Type: Integrated, Chip
Utilized IC / Part: STLC2690
RF Family/Standard: Bluetooth
Serial Interfaces: UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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STF11N65M5 en.DM00049307.pdf
STF11N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 100 V
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STL8DN6LF3 en.DM00039155.pdf
STL8DN6LF3
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 60V 20A POWERFLAT
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A
Drain to Source Voltage (Vdss): 60V
Power - Max: 65W
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+60.18 грн
Мінімальне замовлення: 3000
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STPSC6H065B-TR en.DM00056349.pdf
STPSC6H065B-TR
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 6A DPAK
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+67.66 грн
5000+65.08 грн
Мінімальне замовлення: 2500
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STFI34N65M5 STF%2CFI34N65M5.pdf
STFI34N65M5
Виробник: STMicroelectronics
Description: MOSFET N CH 650V 28A I2PAKFP
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-281 (I2PAKFP)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I2PAK
Packaging: Tube
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STEVAL-ILL035V1 en.DM00055252.pdf
STEVAL-ILL035V1
Виробник: STMicroelectronics
Description: EVAL BOARD FOR LED7708
Part Status: Active
Outputs and Type: 16, Non-Isolated
Supplied Contents: Board(s)
Utilized IC / Part: LED7708
Current - Output / Channel: 85mA
Voltage - Input: 10V ~ 28V
Features: Dimmable
Packaging: Bulk
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STPSC6H065G-TR en.DM00056349.pdf
STPSC6H065G-TR
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 6A D2PAK
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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STGIPS35K60L1 STGIPS35K60L1.pdf
STGIPS35K60L1
Виробник: STMicroelectronics
Description: MODULE IPM SLLIMM SDIP-22L
Voltage: 600 V
Current: 35 A
Voltage - Isolation: 2500Vrms
Configuration: 1 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 22-PowerDIP Module (0.993", 25.23mm)
Packaging: Tube
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STTH20L03CG-TR en.DM00053149.pdf
STTH20L03CG-TR
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 300V 10A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 26 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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STGIPS40W60L1 STGIPS40W60L1.pdf
STGIPS40W60L1
Виробник: STMicroelectronics
Description: MODULE IPM SLLIMM SDIP-22L
Voltage: 600 V
Current: 40 A
Voltage - Isolation: 2500Vrms
Configuration: 1 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 22-PowerDIP Module (0.993", 25.23mm)
Packaging: Tube
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TDA7498ETR TDA7498E.pdf
TDA7498ETR
Виробник: STMicroelectronics
Description: IC AMP D MONO/STER 220W PWRSSO36
Packaging: Tape & Reel (TR)
Features: Differential Inputs, Mute, Short-Circuit and Thermal Protection, Standby
Package / Case: 36-PowerFSOP (0.295", 7.50mm Width)
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 14V ~ 36V
Max Output Power x Channels @ Load: 220W x 1 @ 3Ohm; 160W x 2 @ 4Ohm
Supplier Device Package: PowerSSO-36 EPU
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+302.55 грн
2000+285.35 грн
Мінімальне замовлення: 1000
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