Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (130162) > Сторінка 2158 з 2170
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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| STGW40H65DFB-4 | STMicroelectronics |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 283W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 283W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STGB20H65DFB2 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 56nC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| STGH30H65DFB-2AG | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 260W Case: H2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 155nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STGP30H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 90nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| STGWA60H65DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| STGWA20H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 147W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 56nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| STGWA30H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 167W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 90nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| STGWA40H65DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 283W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| STGWA50H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53A Power dissipation: 272W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 151nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| STGWA100H65DFB2 | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 91A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 288nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STP2N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.3A; Idm: 8A; 42W Case: TO220-3 Mounting: THT Kind of package: tube Pulsed drain current: 8A Power dissipation: 42W Gate charge: 5nC Polarisation: unipolar Technology: MDmesh™ K5 Drain current: 1.3A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 4.5Ω |
на замовлення 124 шт: термін постачання 14-30 дні (днів) |
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| STL2N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.5A; Idm: 6A; 33W Case: PowerFLAT 5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 6A Power dissipation: 33W Gate charge: 5nC Polarisation: unipolar Drain current: 1.5A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 4.5Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STD2N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK; ESD Case: DPAK Mounting: SMD Kind of package: reel; tape Power dissipation: 45W Polarisation: unipolar Version: ESD Technology: SuperMesh™ Drain current: 1.3A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 4.5Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| LD39100PU18RY | STMicroelectronics |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DFN6; SMD; 2÷3% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.4V Output voltage: 1.8V Output current: 1A Case: DFN6 Mounting: SMD Manufacturer series: LD39100 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 1.5...5.5V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSH24IDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 25MHz; Ch: 4; 3÷30VDC; SO14; 3.5mV Type of integrated circuit: operational amplifier Bandwidth: 25MHz Number of channels: 4 Mounting: SMT Voltage supply range: 3...30V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 15V/μs Integrated circuit features: high speed Input offset voltage: 3.5mV Kind of package: reel; tape Input bias current: 0.65µA Input offset current: 65nA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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L9663 | STMicroelectronics |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; PSI5,SPI; SMD; TQFP32; Ch: 2; tube Type of integrated circuit: interface Mounting: SMD Case: TQFP32 Kind of package: tube Interface: PSI5; SPI Kind of integrated circuit: transceiver Number of channels: 2 |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||
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TSU102IST | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 9kHz; Ch: 2; 1.5÷5.5VDC; MSOP8; 3.4mV Type of integrated circuit: operational amplifier Bandwidth: 9kHz Number of channels: 2 Mounting: SMT Voltage supply range: 1.5...5.5V DC Case: MSOP8 Operating temperature: -40...85°C Slew rate: 3mV/μs Integrated circuit features: nanopower; rail-to-rail Quiescent current: 950nA Input offset voltage: 3.4mV Kind of package: reel; tape Input bias current: 30pA Input offset current: 30pA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P0111MA 1AA3 | STMicroelectronics |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 25uA; TO92; THT; bulk Gate current: 25µA Max. off-state voltage: 0.6kV Load current: 0.5A Max. load current: 0.8A Kind of package: bulk Case: TO92 Type of thyristor: thyristor Mounting: THT Max. forward impulse current: 8A |
на замовлення 2475 шт: термін постачання 14-30 дні (днів) |
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| STM6315SDW13F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1...5.5V DC Case: SOT143-4 Operating temperature: -40...125°C Mounting: SMD Threshold on-voltage: 2.63V Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TYN1212RG | STMicroelectronics |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 12A; Igt: 15mA; TO220AB; THT; tube Max. off-state voltage: 1.2kV Case: TO220AB Mounting: THT Max. load current: 12A Max. forward impulse current: 120A Kind of package: tube Gate current: 15mA Type of thyristor: thyristor |
на замовлення 174 шт: термін постачання 14-30 дні (днів) |
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TN4050-12PI | STMicroelectronics |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 40A; 25A; Igt: 50mA; TOP3I; THT; tube Max. off-state voltage: 1.2kV Load current: 25A Case: TOP3I Mounting: THT Max. load current: 40A Max. forward impulse current: 0.4kA Kind of package: tube Gate current: 50mA Type of thyristor: thyristor |
на замовлення 24 шт: термін постачання 14-30 дні (днів) |
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TN5050H-12WY | STMicroelectronics |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 50A; 32A; Igt: 50mA; TO247; THT; tube Max. off-state voltage: 1.2kV Load current: 32A Case: TO247 Mounting: THT Max. load current: 50A Max. forward impulse current: 0.4kA Kind of package: tube Features of semiconductor devices: high temperature Application: automotive industry Gate current: 50mA Type of thyristor: thyristor |
на замовлення 28 шт: термін постачання 14-30 дні (днів) |
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| TSC2010IST | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: miniSO8 Operating temperature: -20...70°C Slew rate: 7.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSC2010IYST | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: miniSO8 Operating temperature: -20...70°C Slew rate: 7.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Application: automotive industry Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STP8NK80Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 630 шт: термін постачання 14-30 дні (днів) |
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STW30N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247 Pulsed drain current: 88A Power dissipation: 140W Gate charge: 64nC Polarisation: unipolar Drain current: 13A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±25V Kind of package: tube Case: TO247 On-state resistance: 0.125Ω Mounting: THT |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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ISO8200B | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; PowerSO36; tube On-state resistance: 0.11Ω Mounting: SMD Supply voltage: 10.5...36V Output current: 0.7A Type of integrated circuit: power switch DC supply current: 9mA Kind of package: tube Case: PowerSO36 Interface: SPI Kind of integrated circuit: high-side Number of channels: 8 |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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ISO8200BQ | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; TFQFPN32; tube On-state resistance: 0.11Ω Mounting: SMD Supply voltage: 10.5...36V Output current: 0.7A Type of integrated circuit: power switch DC supply current: 9mA Integrated circuit features: galvanically isolated Kind of package: tube Case: TFQFPN32 Interface: SPI Kind of integrated circuit: high-side Number of channels: 8 |
на замовлення 172 шт: термін постачання 14-30 дні (днів) |
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ISO8200AQ | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; TFQFPN32; tube On-state resistance: 0.12Ω Mounting: SMD Supply voltage: 10.5...36V Output current: 0.7A Type of integrated circuit: power switch DC supply current: 9mA Integrated circuit features: galvanically isolated Kind of package: tube Case: TFQFPN32 Interface: SPI Kind of integrated circuit: high-side Number of channels: 8 |
на замовлення 209 шт: термін постачання 14-30 дні (днів) |
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| VIPER17HDTR | STMicroelectronics |
Category: Voltage regulators - PWM circuits Description: IC: PMIC Type of integrated circuit: PMIC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| VIPER17HN | STMicroelectronics |
Category: Voltage regulators - PWM circuits Description: IC: PMIC Type of integrated circuit: PMIC |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||||||||||
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T410-700T | STMicroelectronics |
Category: Triacs Description: Triac; 700V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A Gate current: 10mA Max. off-state voltage: 700V Max. load current: 4A Kind of package: tube Case: TO220AB Type of thyristor: triac Mounting: THT Max. forward impulse current: 31A |
на замовлення 25 шт: термін постачання 14-30 дні (днів) |
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T410-800H | STMicroelectronics |
Category: Triacs Description: Triac; 800V; 4A; IPAK; Igt: 10mA; Ifsm: 31A Gate current: 10mA Max. off-state voltage: 0.8kV Max. load current: 4A Kind of package: tube Case: IPAK Type of thyristor: triac Mounting: THT Max. forward impulse current: 31A |
на замовлення 284 шт: термін постачання 14-30 дні (днів) |
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T410-800T | STMicroelectronics |
Category: Triacs Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A Gate current: 10mA Max. off-state voltage: 0.8kV Max. load current: 4A Kind of package: tube Case: TO220AB Type of thyristor: triac Mounting: THT Max. forward impulse current: 31A |
на замовлення 83 шт: термін постачання 14-30 дні (днів) |
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STWD100NXWY3F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: timer Kind of RESET output: open drain; push-pull Active logical level: low Supply voltage: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Number of channels: 1 Integrated circuit features: watchdog |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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STWD100YNXWY3F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: timer Kind of RESET output: open drain; push-pull Active logical level: low Supply voltage: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Number of channels: 1 Integrated circuit features: watchdog |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BUL49D | STMicroelectronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 450V; 5A; 80W; TO220AB; 1.23÷1.32mm Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 450V Collector current: 5A Power dissipation: 80W Case: TO220AB Current gain: 4...60 Mounting: THT Kind of package: tube Heatsink thickness: 1.23...1.32mm |
на замовлення 137 шт: термін постачання 14-30 дні (днів) |
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STN851 | STMicroelectronics |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 5A; 1.6W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 1.6W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Current gain: 30...350 |
на замовлення 515 шт: термін постачання 14-30 дні (днів) |
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2STN1550 | STMicroelectronics |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 5A; 1.6W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 5A Power dissipation: 1.6W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
на замовлення 667 шт: термін постачання 14-30 дні (днів) |
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L6920D | STMicroelectronics |
Category: Voltage regulators - DC/DC circuits Description: Driver; DC/DC converter; Uin: 0.6÷5.5VDC; Uout: 2÷5.2VDC; 1A; SMD Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Input voltage: 0.6...5.5V DC Output voltage: 2...5.2V DC Case: TSSOP8 Mounting: SMD Frequency: 1MHz Topology: boost Number of channels: 1 Operating temperature: max. 150°C Output current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STTH2003CG | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 10Ax2; 35ns; D2PAK; Ufmax: 1V; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 10A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: D2PAK Max. forward voltage: 1V Max. forward impulse current: 110A Kind of package: tube Max. load current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FERD40M45CT | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 45V; 20Ax2; tube; Ifsm: 275A; TO220AB; 500ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 45V Load current: 20A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 275A Case: TO220AB Max. forward voltage: 0.34V Max. load current: 40A Heatsink thickness: 1.23...1.32mm Reverse recovery time: 0.5µs |
на замовлення 549 шт: термін постачання 14-30 дні (днів) |
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TS472IQT | STMicroelectronics |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Ch: 2; Amp.class: AB; QFN24; 2.2÷5.5VDC; 2.4mA Type of integrated circuit: audio amplifier Number of channels: 2 Mounting: SMD Voltage supply range: 2.2...5.5V DC Case: QFN24 Operating temperature: -40...85°C Quiescent current: 2.4mA Amplifier class: AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TS472EIJT | STMicroelectronics |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; Ch: 2; Amp.class: AB; flip chip12; 2.2÷5.5VDC Type of integrated circuit: audio amplifier Number of channels: 2 Mounting: SMD Voltage supply range: 2.2...5.5V DC Case: flip chip12 Operating temperature: -40...85°C Quiescent current: 2.4mA Amplifier class: AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSC2010HYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -20...70°C Slew rate: 3.9V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Application: automotive industry Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSC2010IDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -20...70°C Slew rate: 7.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSC2012HYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 490kHz; Ch: 1; 2.7÷5.5VDC; SO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 490kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -20...70°C Slew rate: 2.8V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Application: automotive industry Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSC2010IYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -20...70°C Slew rate: 7.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Application: automotive industry Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSC2011HYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 750kHz; Ch: 1; 2.7÷5.5VDC; SO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 750kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -20...70°C Slew rate: 3.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Application: automotive industry Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STF8N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 16.5nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 24A |
на замовлення 127 шт: термін постачання 14-30 дні (днів) |
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STF8NK100Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 40W; TO220FP; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4.3A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: SuperMesh™ |
на замовлення 43 шт: термін постачання 14-30 дні (днів) |
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STF80N900K6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 21.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 21.5W Case: TO220FP On-state resistance: 0.9Ω Mounting: THT Gate charge: 7nC Kind of channel: enhancement |
на замовлення 100 шт: термін постачання 14-30 дні (днів) |
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| STF80N240K6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
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STTH15R06FP | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 150A; TO220FPAC; tube; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: TO220FPAC Kind of package: tube Max. forward voltage: 2.9V Max. load current: 30A Leakage current: 60µA Reverse recovery time: 50ns |
на замовлення 83 шт: термін постачання 14-30 дні (днів) |
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STF21N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.7A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 179mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 35 шт: термін постачання 14-30 дні (днів) |
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STP21N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.7A Pulsed drain current: 68A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 179mΩ Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| STL21N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 68A Power dissipation: 125W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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1.5KE6V8CA | STMicroelectronics |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1mA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
на замовлення 2105 шт: термін постачання 14-30 дні (днів) |
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STF12N50DM2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 25W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 16nC Drain current: 11A Kind of channel: enhancement Drain-source voltage: 500V Gate-source voltage: ±25V On-state resistance: 0.35Ω Pulsed drain current: 44A |
на замовлення 418 шт: термін постачання 14-30 дні (днів) |
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STF12N50M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 85W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 85W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 15nC Drain current: 10A Kind of channel: enhancement Drain-source voltage: 500V Gate-source voltage: ±25V On-state resistance: 0.38Ω Pulsed drain current: 40A |
товару немає в наявності |
В кошику од. на суму грн. |
| STGW40H65DFB-4 |
|
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
товару немає в наявності
В кошику
од. на суму грн.
| STGB20H65DFB2 |
|
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| STGH30H65DFB-2AG |
|
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: H2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 260W; H2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 260W
Case: H2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 155nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.
| STGP30H65DFB2 |
|
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| STGWA60H65DFB |
|
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.
| STGWA20H65DFB2 |
|
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| STGWA30H65DFB2 |
|
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| STGWA40H65DFB |
|
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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В кошику
од. на суму грн.
| STGWA50H65DFB2 |
|
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 151nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| STGWA100H65DFB2 |
|
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| STP2N80K5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.3A; Idm: 8A; 42W
Case: TO220-3
Mounting: THT
Kind of package: tube
Pulsed drain current: 8A
Power dissipation: 42W
Gate charge: 5nC
Polarisation: unipolar
Technology: MDmesh™ K5
Drain current: 1.3A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.3A; Idm: 8A; 42W
Case: TO220-3
Mounting: THT
Kind of package: tube
Pulsed drain current: 8A
Power dissipation: 42W
Gate charge: 5nC
Polarisation: unipolar
Technology: MDmesh™ K5
Drain current: 1.3A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
на замовлення 124 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.48 грн |
| 9+ | 49.87 грн |
| 10+ | 44.01 грн |
| 25+ | 36.65 грн |
| STL2N80K5 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.5A; Idm: 6A; 33W
Case: PowerFLAT 5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 6A
Power dissipation: 33W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.5A; Idm: 6A; 33W
Case: PowerFLAT 5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 6A
Power dissipation: 33W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
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В кошику
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| STD2N80K5 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 45W
Polarisation: unipolar
Version: ESD
Technology: SuperMesh™
Drain current: 1.3A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 45W
Polarisation: unipolar
Version: ESD
Technology: SuperMesh™
Drain current: 1.3A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
товару немає в наявності
В кошику
од. на суму грн.
| LD39100PU18RY |
|
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DFN6; SMD; 2÷3%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.8V
Output current: 1A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39100
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.5...5.5V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; DFN6; SMD; 2÷3%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.8V
Output current: 1A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39100
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 1.5...5.5V
Application: automotive industry
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| TSH24IDT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 25MHz; Ch: 4; 3÷30VDC; SO14; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 25MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 15V/μs
Integrated circuit features: high speed
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 0.65µA
Input offset current: 65nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 25MHz; Ch: 4; 3÷30VDC; SO14; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 25MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 3...30V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 15V/μs
Integrated circuit features: high speed
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 0.65µA
Input offset current: 65nA
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| L9663 |
|
Виробник: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; PSI5,SPI; SMD; TQFP32; Ch: 2; tube
Type of integrated circuit: interface
Mounting: SMD
Case: TQFP32
Kind of package: tube
Interface: PSI5; SPI
Kind of integrated circuit: transceiver
Number of channels: 2
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; PSI5,SPI; SMD; TQFP32; Ch: 2; tube
Type of integrated circuit: interface
Mounting: SMD
Case: TQFP32
Kind of package: tube
Interface: PSI5; SPI
Kind of integrated circuit: transceiver
Number of channels: 2
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| TSU102IST |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 9kHz; Ch: 2; 1.5÷5.5VDC; MSOP8; 3.4mV
Type of integrated circuit: operational amplifier
Bandwidth: 9kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 1.5...5.5V DC
Case: MSOP8
Operating temperature: -40...85°C
Slew rate: 3mV/μs
Integrated circuit features: nanopower; rail-to-rail
Quiescent current: 950nA
Input offset voltage: 3.4mV
Kind of package: reel; tape
Input bias current: 30pA
Input offset current: 30pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 9kHz; Ch: 2; 1.5÷5.5VDC; MSOP8; 3.4mV
Type of integrated circuit: operational amplifier
Bandwidth: 9kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 1.5...5.5V DC
Case: MSOP8
Operating temperature: -40...85°C
Slew rate: 3mV/μs
Integrated circuit features: nanopower; rail-to-rail
Quiescent current: 950nA
Input offset voltage: 3.4mV
Kind of package: reel; tape
Input bias current: 30pA
Input offset current: 30pA
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| P0111MA 1AA3 |
|
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 25uA; TO92; THT; bulk
Gate current: 25µA
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. load current: 0.8A
Kind of package: bulk
Case: TO92
Type of thyristor: thyristor
Mounting: THT
Max. forward impulse current: 8A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 25uA; TO92; THT; bulk
Gate current: 25µA
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. load current: 0.8A
Kind of package: bulk
Case: TO92
Type of thyristor: thyristor
Mounting: THT
Max. forward impulse current: 8A
на замовлення 2475 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.74 грн |
| 23+ | 18.24 грн |
| 28+ | 15.40 грн |
| 100+ | 10.38 грн |
| 500+ | 7.36 грн |
| 1000+ | 6.44 грн |
| STM6315SDW13F |
|
Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT143-4
Operating temperature: -40...125°C
Mounting: SMD
Threshold on-voltage: 2.63V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1...5.5V DC
Case: SOT143-4
Operating temperature: -40...125°C
Mounting: SMD
Threshold on-voltage: 2.63V
Number of channels: 1
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| TYN1212RG |
|
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 12A; Igt: 15mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Case: TO220AB
Mounting: THT
Max. load current: 12A
Max. forward impulse current: 120A
Kind of package: tube
Gate current: 15mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 12A; Igt: 15mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Case: TO220AB
Mounting: THT
Max. load current: 12A
Max. forward impulse current: 120A
Kind of package: tube
Gate current: 15mA
Type of thyristor: thyristor
на замовлення 174 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 114.45 грн |
| 10+ | 83.59 грн |
| 50+ | 70.79 грн |
| 100+ | 65.52 грн |
| TN4050-12PI |
|
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 40A; 25A; Igt: 50mA; TOP3I; THT; tube
Max. off-state voltage: 1.2kV
Load current: 25A
Case: TOP3I
Mounting: THT
Max. load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Gate current: 50mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 40A; 25A; Igt: 50mA; TOP3I; THT; tube
Max. off-state voltage: 1.2kV
Load current: 25A
Case: TOP3I
Mounting: THT
Max. load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Gate current: 50mA
Type of thyristor: thyristor
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 316.30 грн |
| 10+ | 185.77 грн |
| TN5050H-12WY |
|
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 50A; 32A; Igt: 50mA; TO247; THT; tube
Max. off-state voltage: 1.2kV
Load current: 32A
Case: TO247
Mounting: THT
Max. load current: 50A
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: high temperature
Application: automotive industry
Gate current: 50mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 50A; 32A; Igt: 50mA; TO247; THT; tube
Max. off-state voltage: 1.2kV
Load current: 32A
Case: TO247
Mounting: THT
Max. load current: 50A
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: high temperature
Application: automotive industry
Gate current: 50mA
Type of thyristor: thyristor
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 423.54 грн |
| 3+ | 358.14 грн |
| 10+ | 297.06 грн |
| TSC2010IST |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: miniSO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: miniSO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Kind of integrated circuit: current sense
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| TSC2010IYST |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: miniSO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; miniSO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: miniSO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
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| STP8NK80Z |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 630 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 139.68 грн |
| 10+ | 63.60 грн |
| 50+ | 59.41 грн |
| STW30N65M5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Pulsed drain current: 88A
Power dissipation: 140W
Gate charge: 64nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO247
On-state resistance: 0.125Ω
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 88A; 140W; TO247
Pulsed drain current: 88A
Power dissipation: 140W
Gate charge: 64nC
Polarisation: unipolar
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO247
On-state resistance: 0.125Ω
Mounting: THT
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 433.45 грн |
| 5+ | 327.18 грн |
| 10+ | 288.69 грн |
| ISO8200B |
|
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; PowerSO36; tube
On-state resistance: 0.11Ω
Mounting: SMD
Supply voltage: 10.5...36V
Output current: 0.7A
Type of integrated circuit: power switch
DC supply current: 9mA
Kind of package: tube
Case: PowerSO36
Interface: SPI
Kind of integrated circuit: high-side
Number of channels: 8
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; PowerSO36; tube
On-state resistance: 0.11Ω
Mounting: SMD
Supply voltage: 10.5...36V
Output current: 0.7A
Type of integrated circuit: power switch
DC supply current: 9mA
Kind of package: tube
Case: PowerSO36
Interface: SPI
Kind of integrated circuit: high-side
Number of channels: 8
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 604.67 грн |
| 10+ | 543.91 грн |
| ISO8200BQ |
|
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; TFQFPN32; tube
On-state resistance: 0.11Ω
Mounting: SMD
Supply voltage: 10.5...36V
Output current: 0.7A
Type of integrated circuit: power switch
DC supply current: 9mA
Integrated circuit features: galvanically isolated
Kind of package: tube
Case: TFQFPN32
Interface: SPI
Kind of integrated circuit: high-side
Number of channels: 8
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; TFQFPN32; tube
On-state resistance: 0.11Ω
Mounting: SMD
Supply voltage: 10.5...36V
Output current: 0.7A
Type of integrated circuit: power switch
DC supply current: 9mA
Integrated circuit features: galvanically isolated
Kind of package: tube
Case: TFQFPN32
Interface: SPI
Kind of integrated circuit: high-side
Number of channels: 8
на замовлення 172 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 495.63 грн |
| ISO8200AQ |
|
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; TFQFPN32; tube
On-state resistance: 0.12Ω
Mounting: SMD
Supply voltage: 10.5...36V
Output current: 0.7A
Type of integrated circuit: power switch
DC supply current: 9mA
Integrated circuit features: galvanically isolated
Kind of package: tube
Case: TFQFPN32
Interface: SPI
Kind of integrated circuit: high-side
Number of channels: 8
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Iout: 0.7A; Ch: 8; SMD; TFQFPN32; tube
On-state resistance: 0.12Ω
Mounting: SMD
Supply voltage: 10.5...36V
Output current: 0.7A
Type of integrated circuit: power switch
DC supply current: 9mA
Integrated circuit features: galvanically isolated
Kind of package: tube
Case: TFQFPN32
Interface: SPI
Kind of integrated circuit: high-side
Number of channels: 8
на замовлення 209 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 497.43 грн |
| 3+ | 449.35 грн |
| 10+ | 416.72 грн |
| 25+ | 372.37 грн |
| 100+ | 352.29 грн |
| VIPER17HDTR |
|
Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| VIPER17HN |
|
Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| T410-700T |
|
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 700V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A
Gate current: 10mA
Max. off-state voltage: 700V
Max. load current: 4A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 31A
Category: Triacs
Description: Triac; 700V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A
Gate current: 10mA
Max. off-state voltage: 700V
Max. load current: 4A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 31A
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 111.74 грн |
| 10+ | 69.79 грн |
| 25+ | 57.91 грн |
| T410-800H |
|
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 4A; IPAK; Igt: 10mA; Ifsm: 31A
Gate current: 10mA
Max. off-state voltage: 0.8kV
Max. load current: 4A
Kind of package: tube
Case: IPAK
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 31A
Category: Triacs
Description: Triac; 800V; 4A; IPAK; Igt: 10mA; Ifsm: 31A
Gate current: 10mA
Max. off-state voltage: 0.8kV
Max. load current: 4A
Kind of package: tube
Case: IPAK
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 31A
на замовлення 284 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 72.99 грн |
| 25+ | 50.71 грн |
| 75+ | 36.23 грн |
| 150+ | 28.45 грн |
| T410-800T |
|
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A
Gate current: 10mA
Max. off-state voltage: 0.8kV
Max. load current: 4A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 31A
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 31A
Gate current: 10mA
Max. off-state voltage: 0.8kV
Max. load current: 4A
Kind of package: tube
Case: TO220AB
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 31A
на замовлення 83 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 83.81 грн |
| 10+ | 49.87 грн |
| 50+ | 38.49 грн |
| STWD100NXWY3F |
|
Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STWD100YNXWY3F |
|
Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BUL49D |
|
Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 80W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 80W
Case: TO220AB
Current gain: 4...60
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 80W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 80W
Case: TO220AB
Current gain: 4...60
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 71.19 грн |
| 10+ | 42.51 грн |
| 25+ | 35.14 грн |
| 50+ | 30.54 грн |
| 100+ | 28.79 грн |
| STN851 |
|
Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Current gain: 30...350
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Current gain: 30...350
на замовлення 515 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 91.92 грн |
| 10+ | 53.72 грн |
| 100+ | 36.07 грн |
| 200+ | 32.30 грн |
| 500+ | 28.20 грн |
| 2STN1550 |
|
Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
на замовлення 667 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.48 грн |
| 13+ | 34.64 грн |
| 100+ | 22.43 грн |
| 500+ | 18.66 грн |
| L6920D |
|
Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 0.6÷5.5VDC; Uout: 2÷5.2VDC; 1A; SMD
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 0.6...5.5V DC
Output voltage: 2...5.2V DC
Case: TSSOP8
Mounting: SMD
Frequency: 1MHz
Topology: boost
Number of channels: 1
Operating temperature: max. 150°C
Output current: 1A
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 0.6÷5.5VDC; Uout: 2÷5.2VDC; 1A; SMD
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Input voltage: 0.6...5.5V DC
Output voltage: 2...5.2V DC
Case: TSSOP8
Mounting: SMD
Frequency: 1MHz
Topology: boost
Number of channels: 1
Operating temperature: max. 150°C
Output current: 1A
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| STTH2003CG |
|
Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 35ns; D2PAK; Ufmax: 1V; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 1V
Max. forward impulse current: 110A
Kind of package: tube
Max. load current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 35ns; D2PAK; Ufmax: 1V; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 1V
Max. forward impulse current: 110A
Kind of package: tube
Max. load current: 30A
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| FERD40M45CT |
|
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 20Ax2; tube; Ifsm: 275A; TO220AB; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 275A
Case: TO220AB
Max. forward voltage: 0.34V
Max. load current: 40A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 0.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 20Ax2; tube; Ifsm: 275A; TO220AB; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 275A
Case: TO220AB
Max. forward voltage: 0.34V
Max. load current: 40A
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 0.5µs
на замовлення 549 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 133.37 грн |
| 5+ | 112.97 грн |
| 10+ | 103.76 грн |
| 25+ | 87.86 грн |
| 30+ | 84.51 грн |
| 50+ | 77.82 грн |
| TS472IQT |
|
Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; QFN24; 2.2÷5.5VDC; 2.4mA
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: QFN24
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; QFN24; 2.2÷5.5VDC; 2.4mA
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: QFN24
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
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| TS472EIJT |
|
Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; flip chip12; 2.2÷5.5VDC
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: flip chip12
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; flip chip12; 2.2÷5.5VDC
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: flip chip12
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
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| TSC2010HYDT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.9V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.9V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
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| TSC2010IDT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Kind of integrated circuit: current sense
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| TSC2012HYDT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 490kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 490kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 2.8V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 490kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 490kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 2.8V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
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| TSC2010IYDT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
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| TSC2011HYDT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 750kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 750kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 750kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 750kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
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| STF8N80K5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
на замовлення 127 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 211.77 грн |
| 10+ | 122.17 грн |
| 50+ | 109.62 грн |
| STF8NK100Z |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 40W; TO220FP; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4.3A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 40W; TO220FP; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4.3A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 221.68 грн |
| 5+ | 187.44 грн |
| 10+ | 180.74 грн |
| 25+ | 173.21 грн |
| STF80N900K6 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 21.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 21.5W
Case: TO220FP
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 21.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 21.5W
Case: TO220FP
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7nC
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 127.06 грн |
| 10+ | 106.27 грн |
| 50+ | 97.90 грн |
| 100+ | 93.72 грн |
| STF80N240K6 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
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Мінімальне замовлення: 1000 шт
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| STTH15R06FP |
|
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 150A; TO220FPAC; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 2.9V
Max. load current: 30A
Leakage current: 60µA
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 150A; TO220FPAC; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 2.9V
Max. load current: 30A
Leakage current: 60µA
Reverse recovery time: 50ns
на замовлення 83 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 159.50 грн |
| 10+ | 73.64 грн |
| 50+ | 64.43 грн |
| STF21N65M5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 382.09 грн |
| 10+ | 225.93 грн |
| STP21N65M5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
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| STL21N65M5 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 1.5KE6V8CA |
|
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
на замовлення 2105 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.23 грн |
| 250+ | 19.75 грн |
| 600+ | 17.91 грн |
| 1200+ | 16.48 грн |
| 1800+ | 15.65 грн |
| STF12N50DM2 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 16nC
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±25V
On-state resistance: 0.35Ω
Pulsed drain current: 44A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 16nC
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±25V
On-state resistance: 0.35Ω
Pulsed drain current: 44A
на замовлення 418 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 164.91 грн |
| 10+ | 99.58 грн |
| 25+ | 87.86 грн |
| 50+ | 84.51 грн |
| STF12N50M2 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 85W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 85W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 85W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 85W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Pulsed drain current: 40A
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