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SS310LH SS310LH Taiwan Semiconductor Corporation SS34LH SERIES_A2103.pdf Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 20000 шт
В кошику  од. на суму  грн.
P6KE110CAH P6KE110CAH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 94VWM 152VC DO204AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 152V
Voltage - Breakdown (Min): 105V
Qualification: AEC-Q101
Grade: Automotive
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 94V
Current - Peak Pulse (10/1000µs): 4.1A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3500 шт
В кошику  од. на суму  грн.
MBRS10150CT-Y MBRS10150CT-Y Taiwan Semiconductor Corporation MBRS1045CT-Y SERIES_C2103.pdf Description: DIODE ARR SCHOT 150V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
 Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
MBRS10100CT MBRS10100CT Taiwan Semiconductor Corporation MBRS1035CT SERIES_M2103.pdf Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
 Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
MBRS10100CTH MBRS10100CTH Taiwan Semiconductor Corporation MBRS1035CTH SERIES_A2103.pdf Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
MBRS10100CT-Y MBRS10100CT-Y Taiwan Semiconductor Corporation MBRS1045CT-Y SERIES_C2103.pdf Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
 Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
SRS10150 SRS10150 Taiwan Semiconductor Corporation SRS1020 SERIES_N2103.pdf Description: DIODE ARR SCHOT 150V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
 Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
MBRS10150CT MBRS10150CT Taiwan Semiconductor Corporation MBRS1035CT SERIES_M2103.pdf Description: DIODE ARR SCHOT 150V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
 Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
SRS10100 SRS10100 Taiwan Semiconductor Corporation SRS1020 SERIES_N2103.pdf Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
 Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
MBRS10150 MBRS10150 Taiwan Semiconductor Corporation MBRS1035 SERIES_K2103.pdf Description: DIODE SCHOTTKY 150V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
 Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
MBRS10100 MBRS10100 Taiwan Semiconductor Corporation MBRS1035 SERIES_K2103.pdf Description: DIODE SCHOTTKY 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
 Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
MBRS10150H MBRS10150H Taiwan Semiconductor Corporation MBRS1035H SERIES_A2103.pdf Description: DIODE SCHOTTKY 150V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
BZT52C7V5S BZT52C7V5S Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_K2411.pdf Description: DIODE ZENER 7.5V 200MW SOD323F
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 200 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
BZT52C7V5-G BZT52C7V5-G Taiwan Semiconductor Corporation BZT52C2V4-G%20SERIES_C2007.pdf Description: DIODE ZENER 7.5V 350MW SOD123
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BZT52C10S BZT52C10S Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_K2411.pdf Description: DIODE ZENER 10V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
BYG20JH BYG20JH Taiwan Semiconductor Corporation BYG20DH SERIES_A2102.pdf Description: DIODE STANDARD 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
7500+6.64 грн
Мінімальне замовлення: 7500 шт
В кошику  од. на суму  грн.
BYG20DH BYG20DH Taiwan Semiconductor Corporation BYG20DH SERIES_A2102.pdf Description: DIODE STANDARD 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
7500+6.64 грн
Мінімальне замовлення: 7500 шт
В кошику  од. на суму  грн.
BC550C BC550C Taiwan Semiconductor Corporation BC546-BC550A_B_C_VerD2112.pdf Description: TRANS NPN 45V 0.1A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
1N4005SGH Taiwan Semiconductor Corporation Description: DIODE STANDARD 600V 1A A405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+3.48 грн
15000+2.85 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
ES5J-T ES5J-T Taiwan Semiconductor Corporation ES5D-T SERIES_B2102.pdf Description: DIODE STANDARD 600V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 71pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
HS3M HS3M Taiwan Semiconductor Corporation HS3A SERIES_K2102.pdf Description: DIODE STANDARD 1000V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
HS3MBH HS3MBH Taiwan Semiconductor Corporation HS3ABH SERIES_A2102.pdf Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+10.32 грн
6000+9.06 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
HS3MH HS3MH Taiwan Semiconductor Corporation HS3AH SERIES_A2102.pdf Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BZV55C4V3 BZV55C4V3 Taiwan Semiconductor Corporation BZV55C2V4%20SERIES_H2301.pdf Description: DIODE ZENER 4.3V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
RS1JFL RS1JFL Taiwan Semiconductor Corporation RS1AFL SERIES_B2103.pdf Description: DIODE STANDARD 600V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
RS1JFL RS1JFL Taiwan Semiconductor Corporation RS1AFL SERIES_B2103.pdf Description: DIODE STANDARD 600V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 4211 шт:
термін постачання 21-31 дні (днів)
20+16.65 грн
32+9.85 грн
100+6.11 грн
500+4.20 грн
1000+3.70 грн
2000+3.28 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
SMAJ6.5AH SMAJ6.5AH Taiwan Semiconductor Corporation SMAJH SERIES_A2102.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 11.2V
Voltage - Breakdown (Min): 7.22V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 6.5V
Current - Peak Pulse (10/1000µs): 35.7A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 7500 шт
В кошику  од. на суму  грн.
SK36BH SK36BH Taiwan Semiconductor Corporation SK32BH SERIES_B2212.pdf Description: DIODE SCHOTTKY 60V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5152 шт:
термін постачання 21-31 дні (днів)
9+37.27 грн
14+22.37 грн
100+14.17 грн
500+9.98 грн
1000+8.90 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
FRAF8JG FRAF8JG Taiwan Semiconductor Corporation FRAF8JG_A2206.pdf Description: DIODE GEN PURP 600V 8A ITO220AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
на замовлення 930 шт:
термін постачання 21-31 дні (днів)
4+86.43 грн
10+74.22 грн
100+57.89 грн
500+44.87 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
FRAF8JGH FRAF8JGH Taiwan Semiconductor Corporation FRAF8JG_A2206.pdf Description: DIODE GEN PURP 600V 8A ITO220AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
4+91.98 грн
10+79.10 грн
100+61.65 грн
500+47.79 грн
1000+37.73 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
MBR1045CT-Y MBR1045CT-Y Taiwan Semiconductor Corporation MBR1045CT-Y SERIES_B2104.pdf Description: DIODE ARR SCHOTT 45V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
MBR1045CTH Taiwan Semiconductor Corporation Description: DIODE ARR SCHOTT 45V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
SF1007GH SF1007GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 500V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
SF1007G C0G SF1007G C0G Taiwan Semiconductor Corporation SF1001G%20SERIES_K2104.pdf Description: DIODE GEN PURP 500V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
SF1007GHC0G SF1007GHC0G Taiwan Semiconductor Corporation SF1001G%20SERIES_K2104.pdf Description: DIODE GEN PURP 500V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товару немає в наявності
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TS2940CW33 RPG TS2940CW33 RPG Taiwan Semiconductor Corporation TS2940_D15.pdf Description: IC REG LINEAR 3.3V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+34.88 грн
5000+31.91 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TS2940CW33 RPG TS2940CW33 RPG Taiwan Semiconductor Corporation TS2940_D15.pdf Description: IC REG LINEAR 3.3V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
на замовлення 6842 шт:
термін постачання 21-31 дні (днів)
4+81.67 грн
10+70.78 грн
25+67.19 грн
100+51.79 грн
250+48.41 грн
500+42.78 грн
1000+33.22 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
1.5KE39C 1.5KE39C Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: TVS DIODE 31.6VWM 56.4VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
1.5KE39H Taiwan Semiconductor Corporation Description: TVS DIODE 31.6VWM 56.4VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
1.5KE39CH Taiwan Semiconductor Corporation Description: TVS DIODE 31.6VWM 56.4VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
1.5KE39 1.5KE39 Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: TVS DIODE 31.6VWM 56.4VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
SS36ALH SS36ALH Taiwan Semiconductor Corporation SS34ALH SERIES_B2103.pdf Description: DIODE SCHOTTKY 60V 3A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 28000 шт
В кошику  од. на суму  грн.
GBPC5010M GBPC5010M Taiwan Semiconductor Corporation GBPC40_50 SERIES_G2211.pdf Description: BRIDGE RECT 1PHASE 1KV 50A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 116 шт:
термін постачання 21-31 дні (днів)
1+401.22 грн
10+258.31 грн
100+185.90 грн
В кошику  од. на суму  грн.
1N914BW Taiwan Semiconductor Corporation Description: DIODE STANDARD 75V 150MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товару немає в наявності
 Мінімальне замовлення: 18000 шт
В кошику  од. на суму  грн.
1.5KE8.2AH 1.5KE8.2AH Taiwan Semiconductor Corporation pdf.php?pn=1.5KE8.2A Description: TVS 1500W 8.2V 5% UNIDIR DO-201
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 12.1V
Voltage - Breakdown (Min): 7.79V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 7.02V
Current - Peak Pulse (10/1000µs): 130A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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В кошику  од. на суму  грн.
TSM120N06LCP Taiwan Semiconductor Corporation Description: 60V, 70A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2118 pF @ 30 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 70A (Tc)
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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TSM120N06LCS Taiwan Semiconductor Corporation Description: 60V, 23A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2193 pF @ 30 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 23A (Tc)
Power Dissipation (Max): 2.2W (Ta), 12.5W (Tc)
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
S3K M6G S3K M6G Taiwan Semiconductor Corporation S3A%20SERIES_N2102.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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HS3K M6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
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HS3J-K M6G HS3J-K M6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
HS3G-K M6G HS3G-K M6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
S3K M6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 800V 3A DO214AB
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
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HS3K M6G HS3K M6G Taiwan Semiconductor Corporation HS3A%20SERIES_K2102.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
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1N4744G 1N4744G Taiwan Semiconductor Corporation 1N4728G%20SERIES_G2301.pdf Description: DIODE ZENER 15V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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BC550B BC550B Taiwan Semiconductor Corporation BC546-BC550A_B_C_VerD2112.pdf Description: TRANS NPN 45V 0.1A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
товару немає в наявності
 Мінімальне замовлення: 20000 шт
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GBU1006H GBU1006H Taiwan Semiconductor Corporation GBU1001 SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 800V 10A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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UF1K UF1K Taiwan Semiconductor Corporation UF1A SERIES_G2104.pdf Description: DIODE STANDARD 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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UF1K R1G UF1K R1G Taiwan Semiconductor Corporation UF1A%20SERIES_G2104.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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UF1K B0G UF1K B0G Taiwan Semiconductor Corporation UF1A%20SERIES_G2104.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
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UF1KHR1G UF1KHR1G Taiwan Semiconductor Corporation UF1A%20SERIES_G2104.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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SS310LH SS34LH SERIES_A2103.pdf
SS310LH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 20000 шт
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P6KE110CAH P6KE SERIES_P2203.pdf
P6KE110CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 94VWM 152VC DO204AC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 152V
Voltage - Breakdown (Min): 105V
Qualification: AEC-Q101
Grade: Automotive
Bidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 94V
Current - Peak Pulse (10/1000µs): 4.1A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3500 шт
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MBRS10150CT-Y MBRS1045CT-Y SERIES_C2103.pdf
MBRS10150CT-Y
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
Мінімальне замовлення: 1600 шт
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MBRS10100CT MBRS1035CT SERIES_M2103.pdf
MBRS10100CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 1600 шт
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MBRS10100CTH MBRS1035CTH SERIES_A2103.pdf
MBRS10100CTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1600 шт
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MBRS10100CT-Y MBRS1045CT-Y SERIES_C2103.pdf
MBRS10100CT-Y
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 1600 шт
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SRS10150 SRS1020 SERIES_N2103.pdf
SRS10150
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
Мінімальне замовлення: 1600 шт
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MBRS10150CT MBRS1035CT SERIES_M2103.pdf
MBRS10150CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
Мінімальне замовлення: 1600 шт
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SRS10100 SRS1020 SERIES_N2103.pdf
SRS10100
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 1600 шт
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MBRS10150 MBRS1035 SERIES_K2103.pdf
MBRS10150
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
Мінімальне замовлення: 1600 шт
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MBRS10100 MBRS1035 SERIES_K2103.pdf
MBRS10100
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 1600 шт
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MBRS10150H MBRS1035H SERIES_A2103.pdf
MBRS10150H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1600 шт
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BZT52C7V5S BZT52C2V4S%20SERIES_K2411.pdf
BZT52C7V5S
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 200MW SOD323F
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 200 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
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BZT52C7V5-G BZT52C2V4-G%20SERIES_C2007.pdf
BZT52C7V5-G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 350MW SOD123
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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BZT52C10S BZT52C2V4S%20SERIES_K2411.pdf
BZT52C10S
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
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BYG20JH BYG20DH SERIES_A2102.pdf
BYG20JH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
7500+6.64 грн
Мінімальне замовлення: 7500 шт
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BYG20DH BYG20DH SERIES_A2102.pdf
BYG20DH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
7500+6.64 грн
Мінімальне замовлення: 7500 шт
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BC550C BC546-BC550A_B_C_VerD2112.pdf
BC550C
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.1A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
1N4005SGH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A A405
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+3.48 грн
15000+2.85 грн
Мінімальне замовлення: 5000 шт
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ES5J-T ES5D-T SERIES_B2102.pdf
ES5J-T
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 71pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
HS3M HS3A SERIES_K2102.pdf
HS3M
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
HS3MBH HS3ABH SERIES_A2102.pdf
HS3MBH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+10.32 грн
6000+9.06 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
HS3MH HS3AH SERIES_A2102.pdf
HS3MH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BZV55C4V3 BZV55C2V4%20SERIES_H2301.pdf
BZV55C4V3
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
RS1JFL RS1AFL SERIES_B2103.pdf
RS1JFL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
RS1JFL RS1AFL SERIES_B2103.pdf
RS1JFL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 4211 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
20+16.65 грн
32+9.85 грн
100+6.11 грн
500+4.20 грн
1000+3.70 грн
2000+3.28 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
SMAJ6.5AH SMAJH SERIES_A2102.pdf
SMAJ6.5AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2V DO214AC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 11.2V
Voltage - Breakdown (Min): 7.22V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 6.5V
Current - Peak Pulse (10/1000µs): 35.7A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику  од. на суму  грн.
SK36BH SK32BH SERIES_B2212.pdf
SK36BH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5152 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
9+37.27 грн
14+22.37 грн
100+14.17 грн
500+9.98 грн
1000+8.90 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
FRAF8JG FRAF8JG_A2206.pdf
FRAF8JG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
на замовлення 930 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+86.43 грн
10+74.22 грн
100+57.89 грн
500+44.87 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
FRAF8JGH FRAF8JG_A2206.pdf
FRAF8JGH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+91.98 грн
10+79.10 грн
100+61.65 грн
500+47.79 грн
1000+37.73 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
MBR1045CT-Y MBR1045CT-Y SERIES_B2104.pdf
MBR1045CT-Y
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 45V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
MBR1045CTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 45V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
SF1007GH
SF1007GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
SF1007G C0G SF1001G%20SERIES_K2104.pdf
SF1007G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
SF1007GHC0G SF1001G%20SERIES_K2104.pdf
SF1007GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
TS2940CW33 RPG TS2940_D15.pdf
TS2940CW33 RPG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+34.88 грн
5000+31.91 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TS2940CW33 RPG TS2940_D15.pdf
TS2940CW33 RPG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
на замовлення 6842 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+81.67 грн
10+70.78 грн
25+67.19 грн
100+51.79 грн
250+48.41 грн
500+42.78 грн
1000+33.22 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
1.5KE39C 1.5KE SERIES_O2104.pdf
1.5KE39C
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 31.6VWM 56.4VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
1.5KE39H
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 31.6VWM 56.4VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
1.5KE39CH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 31.6VWM 56.4VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
1.5KE39 1.5KE SERIES_O2104.pdf
1.5KE39
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 31.6VWM 56.4VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
SS36ALH SS34ALH SERIES_B2103.pdf
SS36ALH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 28000 шт
В кошику  од. на суму  грн.
GBPC5010M GBPC40_50 SERIES_G2211.pdf
GBPC5010M
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 50A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 116 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+401.22 грн
10+258.31 грн
100+185.90 грн
В кошику  од. на суму  грн.
1N914BW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 75V 150MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товару немає в наявності
Мінімальне замовлення: 18000 шт
В кошику  од. на суму  грн.
1.5KE8.2AH pdf.php?pn=1.5KE8.2A
1.5KE8.2AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS 1500W 8.2V 5% UNIDIR DO-201
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 12.1V
Voltage - Breakdown (Min): 7.79V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 7.02V
Current - Peak Pulse (10/1000µs): 130A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
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TSM120N06LCP
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 70A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2118 pF @ 30 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 70A (Tc)
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TSM120N06LCS
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 23A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2193 pF @ 30 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 23A (Tc)
Power Dissipation (Max): 2.2W (Ta), 12.5W (Tc)
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S3K M6G S3A%20SERIES_N2102.pdf
S3K M6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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HS3K M6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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HS3J-K M6G
HS3J-K M6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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HS3G-K M6G
HS3G-K M6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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S3K M6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
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HS3K M6G HS3A%20SERIES_K2102.pdf
HS3K M6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
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1N4744G 1N4728G%20SERIES_G2301.pdf
1N4744G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
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Мінімальне замовлення: 3000 шт
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BC550B BC546-BC550A_B_C_VerD2112.pdf
BC550B
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.1A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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Мінімальне замовлення: 20000 шт
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GBU1006H GBU1001 SERIES_M2103.pdf
GBU1006H
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 10A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
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UF1K UF1A SERIES_G2104.pdf
UF1K
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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UF1K R1G UF1A%20SERIES_G2104.pdf
UF1K R1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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UF1K B0G UF1A%20SERIES_G2104.pdf
UF1K B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
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UF1KHR1G UF1A%20SERIES_G2104.pdf
UF1KHR1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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