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ES1GL RHG ES1GL RHG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
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ES1JF R2G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE STANDARD 600V 1A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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ES1JL RHG ES1JL RHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
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ES1JLHRHG ES1JLHRHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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HS1KL RHG HS1KL RHG Taiwan Semiconductor Corporation HS1AL SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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HS1ML RHG HS1ML RHG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MBS10HRCG MBS10HRCG Taiwan Semiconductor Corporation MBS2%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 1KV 500MA MBS
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MBS8HRCG MBS8HRCG Taiwan Semiconductor Corporation MBS2%20SERIES_O15.pdf Description: BRIDGE RECT 1P 800V 500MA MBS
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RABS15MHRGG RABS15MHRGG Taiwan Semiconductor Corporation RABS15M_D2103.pdf Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
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RMB4S RCG RMB4S RCG Taiwan Semiconductor Corporation RMB2S%20SERIES_G1708.pdf Description: BRIDGE RECT 1P 400V 500MA MBS
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RMB4SHRCG RMB4SHRCG Taiwan Semiconductor Corporation RMB2S%20SERIES_G1708.pdf Description: BRIDGE RECT 1P 400V 500MA MBS
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RS1BL RHG RS1BL RHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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RS1BLHRHG RS1BLHRHG Taiwan Semiconductor Corporation RS1AL%20SERIES_M15.pdf Description: DIODE GEN PURP 100V 800MA SUBSMA
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RS1KL RHG RS1KL RHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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RS1KLHRHG RS1KLHRHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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SBS25 RGG SBS25 RGG Taiwan Semiconductor Corporation SBS24%20SERIES_B15.pdf Description: BRIDGE RECT 1PHASE 50V 2A ABS
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SBS25HRGG SBS25HRGG Taiwan Semiconductor Corporation SBS24%20SERIES_B15.pdf Description: BRIDGE RECT 1PHASE 50V 2A ABS
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SBS34 RGG SBS34 RGG Taiwan Semiconductor Corporation SBS34%20SERIES_E15.pdf Description: BRIDGE RECT 1PHASE 40V 3A ABS
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SBS34HRGG SBS34HRGG Taiwan Semiconductor Corporation SBS34%20SERIES_E15.pdf Description: BRIDGE RECT 1PHASE 40V 3A ABS
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SS110L RHG SS110L RHG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
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SS110LHRHG SS110LHRHG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
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SS14L RHG SS14L RHG Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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SS14LHRHG SS14LHRHG Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
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SS16L RHG SS16L RHG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS16LHRHG SS16LHRHG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS210L RHG SS210L RHG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS210LHRHG SS210LHRHG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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SS22L RHG SS22L RHG Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS22LHRHG SS22LHRHG Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS24L RHG SS24L RHG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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SS310L RHG SS310L RHG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS310LHRHG SS310LHRHG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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SS36L RHG SS36L RHG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SS36LHRHG SS36LHRHG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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TSPB10U45S S2G TSPB10U45S S2G Taiwan Semiconductor Corporation TSPB10U45S_G15.pdf Description: DIODE SCHOTTKY 45V 10A SMPC4.0
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DBLS101G RDG DBLS101G RDG Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 50V 1A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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DBLS101GHRDG DBLS101GHRDG Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 50V 1A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Qualification: AEC-Q101
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DBLS102GHRDG DBLS102GHRDG Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 100V 1A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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DBLS103G RDG DBLS103G RDG Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 200V 1A DBLS
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DBLS103GHRDG DBLS103GHRDG Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 200V 1A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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DBLS104GHRDG DBLS104GHRDG Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 400V 1A DBLS
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DBLS106G RDG DBLS106G RDG Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 800V 1A DBLS
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DBLS106GHRDG DBLS106GHRDG Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 800V 1A DBLS
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DBLS107GHRDG DBLS107GHRDG Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
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DBLS151G RDG DBLS151G RDG Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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DBLS151GHRDG DBLS151GHRDG Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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DBLS152G RDG DBLS152G RDG Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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DBLS152GHRDG DBLS152GHRDG Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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DBLS153G RDG DBLS153G RDG Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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DBLS153GHRDG DBLS153GHRDG Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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DBLS154G RDG DBLS154G RDG Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 400V 1.5A DBLS
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DBLS154GHRDG DBLS154GHRDG Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 400V 1.5A DBLS
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DBLS155GHRDG DBLS155GHRDG Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 600V 1.5A DBLS
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DBLS156G RDG DBLS156G RDG Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 800V 1.5A DBLS
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DBLS156GHRDG DBLS156GHRDG Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 800V 1.5A DBLS
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DBLS157GHRDG DBLS157GHRDG Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 1KV 1.5A DBLS
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DBLS158G RDG DBLS158G RDG Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 1.2KV 1.5A DBLS
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DBLS158GHRDG DBLS158GHRDG Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 1.2KV 1.5A DBLS
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DBLS159GHRDG DBLS159GHRDG Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 1.4KV 1.5A DBLS
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DBLS201G RDG DBLS201G RDG Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 50V 2A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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ES1GL RHG ES1AL%20SERIES_K15.pdf
ES1GL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
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ES1JF R2G ES1A%20SERIES_O2112.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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ES1JL RHG ES1AL%20SERIES_L2103.pdf
ES1JL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
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ES1JLHRHG ES1AL%20SERIES_L2103.pdf
ES1JLHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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HS1KL RHG HS1AL SERIES_C2103.pdf
HS1KL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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HS1ML RHG HS1AL%20SERIES_C2103.pdf
HS1ML RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MBS10HRCG MBS2%20SERIES_P2103.pdf
MBS10HRCG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 500MA MBS
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MBS8HRCG MBS2%20SERIES_O15.pdf
MBS8HRCG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 500MA MBS
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RABS15MHRGG RABS15M_D2103.pdf
RABS15MHRGG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 1.5A ABS-L
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RMB4S RCG RMB2S%20SERIES_G1708.pdf
RMB4S RCG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 500MA MBS
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RMB4SHRCG RMB2S%20SERIES_G1708.pdf
RMB4SHRCG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 500MA MBS
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RS1BL RHG RS1AL%20SERIES_N2103.pdf
RS1BL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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RS1BLHRHG RS1AL%20SERIES_M15.pdf
RS1BLHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
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RS1KL RHG RS1AL%20SERIES_N2103.pdf
RS1KL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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RS1KLHRHG RS1AL%20SERIES_N2103.pdf
RS1KLHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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SBS25 RGG SBS24%20SERIES_B15.pdf
SBS25 RGG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A ABS
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SBS25HRGG SBS24%20SERIES_B15.pdf
SBS25HRGG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A ABS
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SBS34 RGG SBS34%20SERIES_E15.pdf
SBS34 RGG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 40V 3A ABS
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SBS34HRGG SBS34%20SERIES_E15.pdf
SBS34HRGG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 40V 3A ABS
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SS110L RHG SS12L%20SERIES_P15.pdf
SS110L RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
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SS110LHRHG SS12L%20SERIES_P15.pdf
SS110LHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
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SS14L RHG SS12L%20SERIES_Q2103.pdf
SS14L RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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SS14LHRHG SS12L%20SERIES_Q2103.pdf
SS14LHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
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SS16L RHG SS12L SERIES_Q2103.pdf
SS16L RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS16LHRHG SS12L SERIES_Q2103.pdf
SS16LHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS210L RHG SS22L-SS215L_O2103.pdf
SS210L RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS210LHRHG SS22L-SS215L_O2103.pdf
SS210LHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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SS22L RHG SS22L%20SERIES_N15.pdf
SS22L RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS22LHRHG SS22L%20SERIES_N15.pdf
SS22LHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS24L RHG SS22L-SS215L_O2103.pdf
SS24L RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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SS310L RHG SS34L-SS310L_C2103.pdf
SS310L RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS310LHRHG SS34L-SS310L_C2103.pdf
SS310LHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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SS36L RHG SS34L-SS310L_C2103.pdf
SS36L RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SS36LHRHG SS34L-SS310L_C2103.pdf
SS36LHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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TSPB10U45S S2G TSPB10U45S_G15.pdf
TSPB10U45S S2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A SMPC4.0
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DBLS101G RDG DBLS101G%20SERIES_P2103.pdf
DBLS101G RDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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DBLS101GHRDG DBLS101G%20SERIES_P2103.pdf
DBLS101GHRDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Qualification: AEC-Q101
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DBLS102GHRDG DBLS101G%20SERIES_P2103.pdf
DBLS102GHRDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 1A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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DBLS103G RDG DBLS101G%20SERIES_P2103.pdf
DBLS103G RDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 1A DBLS
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DBLS103GHRDG DBLS101G%20SERIES_P2103.pdf
DBLS103GHRDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 1A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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DBLS104GHRDG DBLS101G%20SERIES_P2103.pdf
DBLS104GHRDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 1A DBLS
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DBLS106G RDG DBLS101G%20SERIES_P2103.pdf
DBLS106G RDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBLS
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DBLS106GHRDG DBLS101G%20SERIES_P2103.pdf
DBLS106GHRDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBLS
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DBLS107GHRDG DBLS101G%20SERIES_P2103.pdf
DBLS107GHRDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
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DBLS151G RDG DBLS151G%20SERIES_M2103.pdf
DBLS151G RDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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DBLS151GHRDG DBLS151G%20SERIES_M2103.pdf
DBLS151GHRDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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DBLS152G RDG DBLS151G%20SERIES_M2103.pdf
DBLS152G RDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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DBLS152GHRDG DBLS151G%20SERIES_M2103.pdf
DBLS152GHRDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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DBLS153G RDG DBLS151G%20SERIES_M2103.pdf
DBLS153G RDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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DBLS153GHRDG DBLS151G%20SERIES_M2103.pdf
DBLS153GHRDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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DBLS154G RDG DBLS151G%20SERIES_M2103.pdf
DBLS154G RDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 1.5A DBLS
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DBLS154GHRDG DBLS151G%20SERIES_M2103.pdf
DBLS154GHRDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 1.5A DBLS
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DBLS155GHRDG DBLS151G%20SERIES_M2103.pdf
DBLS155GHRDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 1.5A DBLS
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DBLS156G RDG DBLS151G%20SERIES_M2103.pdf
DBLS156G RDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 1.5A DBLS
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DBLS156GHRDG DBLS151G%20SERIES_M2103.pdf
DBLS156GHRDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 1.5A DBLS
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DBLS157GHRDG DBLS151G%20SERIES_M2103.pdf
DBLS157GHRDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1.5A DBLS
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DBLS158G RDG DBLS151G%20SERIES_M2103.pdf
DBLS158G RDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1.2KV 1.5A DBLS
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DBLS158GHRDG DBLS151G%20SERIES_M2103.pdf
DBLS158GHRDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1.2KV 1.5A DBLS
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DBLS159GHRDG DBLS151G%20SERIES_M2103.pdf
DBLS159GHRDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1.4KV 1.5A DBLS
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DBLS201G RDG DBLS201G%20SERIES_J2103.pdf
DBLS201G RDG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
товару немає в наявності
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