Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (22574) > Сторінка 47 з 377
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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ES3FB M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 300V 3A DO214AA |
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ES3FBHM4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 300V 3A DO214AA |
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ES3GB M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 3A DO214AA |
товар відсутній |
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ES3GBHM4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 3A DO214AA |
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ES3JB M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 3A DO214AA |
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ES3JBHM4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 3A DO214AA |
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HS1K M2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 1A DO214AC |
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HS1KL M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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HS1KL MHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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HS1M M2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 1A DO214AC |
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HS1ML M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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HS1ML MHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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HS2D M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 2A DO214AA |
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HS2JA M2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 1.5A DO214AC |
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HS2K M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 2A DO214AA |
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HS2KA M2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 1.5A DO214AC |
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HS2M M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 2A DO214AA |
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HS2MA M2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 1.5A DO214AC |
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HS3BB M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 3A DO214AA |
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HS3DB M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 3A DO214AA |
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HS3GB M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 3A DO214AA |
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HS3MB M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 3A DO214AA |
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MUR110S M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A DO214AA |
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MUR110SHM4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 1A DO214AA |
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MUR115S M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 150V 1A DO214AA |
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MUR115SHM4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 150V 1A DO214AA |
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MUR120S M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 1A DO214AA |
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MUR120SHM4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 1A DO214AA |
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MUR140S M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 1A DO214AA |
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MUR140SHM4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 1A DO214AA |
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MUR160S M4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 1A DO214AA |
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MUR160SHM4G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 1A DO214AA |
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P4SMA10A M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 8.55V 14.5V DO214AC |
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P4SMA10AHM2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8.55VWM 14.5VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 29A Voltage - Reverse Standoff (Typ): 8.55V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 9.5V Voltage - Clamping (Max) @ Ipp: 14.5V Power - Peak Pulse: 400W Power Line Protection: No |
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P4SMA12A M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 10.2VWM 16.7VC DO214AC |
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P4SMA12AHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 10.2VWM 16.7VC DO214AC |
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P4SMA130A M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 111VWM 179VC DO214AC |
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P4SMA130AHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 111VWM 179VC DO214AC |
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P4SMA130CA M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 111VWM 179VC DO214AC |
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P4SMA13A M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 11.1VWM 18.2VC DO214AC |
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P4SMA13AHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 11.1VWM 18.2VC DO214AC |
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P4SMA13CA M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 11.1V 18.2V DO214AC |
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P4SMA13CAHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 11.1V 18.2V DO214AC |
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P4SMA150A M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 128VWM 207VC DO214AC |
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P4SMA150AHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 128V 207V DO214AC |
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P4SMA150CA M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 128V 207V DO214AC |
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P4SMA150CAHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 128V 207V DO214AC |
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P4SMA160AHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 136V 219V DO214AC |
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P4SMA16AHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 13.6V 22.5V DO214AC |
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P4SMA22A M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 18.8V 30.6V DO214AC |
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P4SMA22AHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 18.8V 30.6V DO214AC |
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P4SMA22CA M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 18.8V 30.6V DO214AC |
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P4SMA24A M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 20.5V 33.2V DO214AC |
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P4SMA24AHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 20.5V 33.2V DO214AC |
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P4SMA24CA M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 20.5V 33.2V DO214AC |
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P4SMA24CAHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 20.5V 33.2V DO214AC |
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P4SMA27A M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 23.1V 37.5V DO214AC |
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P4SMA27AHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 23.1V 37.5V DO214AC |
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P4SMA27CA M2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 23.1V 37.5V DO214AC |
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P4SMA27CAHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 23.1V 37.5V DO214AC |
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ES3FB M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO214AA
Description: DIODE GEN PURP 300V 3A DO214AA
товар відсутній
ES3FBHM4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO214AA
Description: DIODE GEN PURP 300V 3A DO214AA
товар відсутній
ES3GB M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AA
Description: DIODE GEN PURP 400V 3A DO214AA
товар відсутній
ES3GBHM4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AA
Description: DIODE GEN PURP 400V 3A DO214AA
товар відсутній
ES3JB M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Description: DIODE GEN PURP 600V 3A DO214AA
товар відсутній
ES3JBHM4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Description: DIODE GEN PURP 600V 3A DO214AA
товар відсутній
HS1K M2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO214AC
Description: DIODE GEN PURP 800V 1A DO214AC
товар відсутній
HS1KL M2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HS1KL MHG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HS1M M2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO214AC
Description: DIODE GEN PURP 1A DO214AC
товар відсутній
HS1ML M2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
HS1ML MHG |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
HS2D M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Description: DIODE GEN PURP 200V 2A DO214AA
товар відсутній
HS2JA M2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO214AC
Description: DIODE GEN PURP 600V 1.5A DO214AC
товар відсутній
HS2K M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO214AA
Description: DIODE GEN PURP 800V 2A DO214AA
товар відсутній
HS2KA M2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO214AC
Description: DIODE GEN PURP 800V 1.5A DO214AC
товар відсутній
HS2M M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 2A DO214AA
Description: DIODE GEN PURP 2A DO214AA
товар відсутній
HS2MA M2G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1.5A DO214AC
Description: DIODE GEN PURP 1.5A DO214AC
товар відсутній
HS3BB M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO214AA
Description: DIODE GEN PURP 100V 3A DO214AA
товар відсутній
HS3DB M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA
Description: DIODE GEN PURP 200V 3A DO214AA
товар відсутній
HS3GB M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AA
Description: DIODE GEN PURP 400V 3A DO214AA
товар відсутній
HS3MB M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AA
Description: DIODE GEN PURP 3A DO214AA
товар відсутній
MUR110S M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AA
Description: DIODE GEN PURP 100V 1A DO214AA
товар відсутній
MUR110SHM4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AA
Description: DIODE GEN PURP 100V 1A DO214AA
товар відсутній
MUR115S M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AA
Description: DIODE GEN PURP 150V 1A DO214AA
товар відсутній
MUR115SHM4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AA
Description: DIODE GEN PURP 150V 1A DO214AA
товар відсутній
MUR120S M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AA
Description: DIODE GEN PURP 200V 1A DO214AA
товар відсутній
MUR120SHM4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AA
Description: DIODE GEN PURP 200V 1A DO214AA
товар відсутній
MUR140S M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Description: DIODE GEN PURP 400V 1A DO214AA
товар відсутній
MUR140SHM4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Description: DIODE GEN PURP 400V 1A DO214AA
товар відсутній
MUR160S M4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AA
Description: DIODE GEN PURP 600V 1A DO214AA
товар відсутній
MUR160SHM4G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AA
Description: DIODE GEN PURP 600V 1A DO214AA
товар відсутній
P4SMA10A M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.55V 14.5V DO214AC
Description: TVS DIODE 8.55V 14.5V DO214AC
товар відсутній
P4SMA10AHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA12A M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO214AC
Description: TVS DIODE 10.2VWM 16.7VC DO214AC
товар відсутній
P4SMA12AHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO214AC
Description: TVS DIODE 10.2VWM 16.7VC DO214AC
товар відсутній
P4SMA130A M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO214AC
Description: TVS DIODE 111VWM 179VC DO214AC
товар відсутній
P4SMA130AHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO214AC
Description: TVS DIODE 111VWM 179VC DO214AC
товар відсутній
P4SMA130CA M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 111VWM 179VC DO214AC
Description: TVS DIODE 111VWM 179VC DO214AC
товар відсутній
P4SMA13A M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1VWM 18.2VC DO214AC
Description: TVS DIODE 11.1VWM 18.2VC DO214AC
товар відсутній
P4SMA13AHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1VWM 18.2VC DO214AC
Description: TVS DIODE 11.1VWM 18.2VC DO214AC
товар відсутній
P4SMA13CA M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1V 18.2V DO214AC
Description: TVS DIODE 11.1V 18.2V DO214AC
товар відсутній
P4SMA13CAHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1V 18.2V DO214AC
Description: TVS DIODE 11.1V 18.2V DO214AC
товар відсутній
P4SMA150A M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 128VWM 207VC DO214AC
Description: TVS DIODE 128VWM 207VC DO214AC
товар відсутній
P4SMA150AHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 128V 207V DO214AC
Description: TVS DIODE 128V 207V DO214AC
товар відсутній
P4SMA150CA M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 128V 207V DO214AC
Description: TVS DIODE 128V 207V DO214AC
товар відсутній
P4SMA150CAHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 128V 207V DO214AC
Description: TVS DIODE 128V 207V DO214AC
товар відсутній
P4SMA160AHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136V 219V DO214AC
Description: TVS DIODE 136V 219V DO214AC
товар відсутній
P4SMA16AHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO214AC
Description: TVS DIODE 13.6V 22.5V DO214AC
товар відсутній
P4SMA22A M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8V 30.6V DO214AC
Description: TVS DIODE 18.8V 30.6V DO214AC
товар відсутній
P4SMA22AHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8V 30.6V DO214AC
Description: TVS DIODE 18.8V 30.6V DO214AC
товар відсутній
P4SMA22CA M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 18.8V 30.6V DO214AC
Description: TVS DIODE 18.8V 30.6V DO214AC
товар відсутній
P4SMA24A M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20.5V 33.2V DO214AC
Description: TVS DIODE 20.5V 33.2V DO214AC
товар відсутній
P4SMA24AHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20.5V 33.2V DO214AC
Description: TVS DIODE 20.5V 33.2V DO214AC
товар відсутній
P4SMA24CA M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20.5V 33.2V DO214AC
Description: TVS DIODE 20.5V 33.2V DO214AC
товар відсутній
P4SMA24CAHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20.5V 33.2V DO214AC
Description: TVS DIODE 20.5V 33.2V DO214AC
товар відсутній
P4SMA27A M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1V 37.5V DO214AC
Description: TVS DIODE 23.1V 37.5V DO214AC
товар відсутній
P4SMA27AHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1V 37.5V DO214AC
Description: TVS DIODE 23.1V 37.5V DO214AC
товар відсутній
P4SMA27CA M2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1V 37.5V DO214AC
Description: TVS DIODE 23.1V 37.5V DO214AC
товар відсутній
P4SMA27CAHM2G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1V 37.5V DO214AC
Description: TVS DIODE 23.1V 37.5V DO214AC
товар відсутній