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RS1BL MQG RS1BL MQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
RS1BL MTG RS1BL MTG Taiwan Semiconductor Corporation RS1AL%20SERIES_M15.pdf Description: DIODE GEN PURP 100V 800MA SUBSMA
товар відсутній
RS1BL RQG RS1BL RQG Taiwan Semiconductor Corporation RS1AL%20SERIES_M15.pdf Description: DIODE GEN PURP 100V 800MA SUBSMA
товар відсутній
RS1BL RTG RS1BL RTG Taiwan Semiconductor Corporation RS1AL%20SERIES_M15.pdf Description: DIODE GEN PURP 100V 800MA SUBSMA
товар відсутній
RS1BLHMQG RS1BLHMQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
RS1BLHMTG RS1BLHMTG Taiwan Semiconductor Corporation RS1AL%20SERIES_M15.pdf Description: DIODE GEN PURP 100V 800MA SUBSMA
товар відсутній
RS1BLHRQG RS1BLHRQG Taiwan Semiconductor Corporation RS1AL%20SERIES_M15.pdf Description: DIODE GEN PURP 100V 800MA SUBSMA
товар відсутній
RS1BLHRTG RS1BLHRTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
RS1DL RQG RS1DL RQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 200V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RS1DL RTG RS1DL RTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 200V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RS1DLHRQG RS1DLHRQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 200V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RS1KL MQG RS1KL MQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 800V 800MA SUBSMA
товар відсутній
RS1KL MTG RS1KL MTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KL RQG RS1KL RQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KL RTG RS1KL RTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KLHRQG RS1KLHRQG Taiwan Semiconductor Corporation RS1AL%20SERIES_M15.pdf Description: DIODE GEN PURP 800V 800MA SUBSMA
товар відсутній
RSFGL RQG RSFGL RQG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 400V 500MA SUBSMA
товар відсутній
RSFGL RTG RSFGL RTG Taiwan Semiconductor Corporation RSFAL%20SERIES_L15.pdf Description: DIODE GEN PURP 400V 500MA SUBSMA
товар відсутній
S1GL RQG S1GL RQG Taiwan Semiconductor Corporation S1AL%20SERIES_O15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
товар відсутній
SS110L MQG SS110L MQG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS110L MTG SS110L MTG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS110L RQG SS110L RQG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS110L RTG SS110L RTG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS110LHMQG SS110LHMQG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS110LHMTG SS110LHMTG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS110LHRQG SS110LHRQG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS110LHRTG SS110LHRTG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS14L MQG SS14L MQG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
SS14L MTG SS14L MTG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
SS14L RQG SS14L RQG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
SS14L RTG SS14L RTG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
SS14LHMQG SS14LHMQG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
товар відсутній
SS14LHMTG SS14LHMTG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
товар відсутній
SS14LHRQG SS14LHRQG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
товар відсутній
SS14LHRTG SS14LHRTG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
товар відсутній
SS16L MQG SS16L MQG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
товар відсутній
SS16L MTG SS16L MTG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товар відсутній
SS16L RQG SS16L RQG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товар відсутній
SS16L RTG SS16L RTG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товар відсутній
SS16LHMQG SS16LHMQG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товар відсутній
SS16LHMTG SS16LHMTG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товар відсутній
SS16LHRQG SS16LHRQG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товар відсутній
SS16LHRTG SS16LHRTG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товар відсутній
SS210L MQG SS210L MQG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SS210L MTG SS210L MTG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SS210L RQG SS210L RQG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SS210L RTG SS210L RTG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
товар відсутній
SS210LHMQG SS210LHMQG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
товар відсутній
SS210LHMTG SS210LHMTG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
товар відсутній
SS210LHRQG SS210LHRQG Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
товар відсутній
SS210LHRTG SS210LHRTG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SS22L MQG SS22L MQG Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
товар відсутній
SS22L MTG SS22L MTG Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
товар відсутній
SS22L RQG SS22L RQG Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
товар відсутній
SS22L RTG SS22L RTG Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
товар відсутній
SS22LHMQG SS22LHMQG Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
товар відсутній
SS22LHMTG SS22LHMTG Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS22LHRQG SS22LHRQG Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS22LHRTG SS22LHRTG Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS24L RQG SS24L RQG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
RS1BL MQG RS1AL%20SERIES_N2103.pdf
RS1BL MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
RS1BL MTG RS1AL%20SERIES_M15.pdf
RS1BL MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
товар відсутній
RS1BL RQG RS1AL%20SERIES_M15.pdf
RS1BL RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
товар відсутній
RS1BL RTG RS1AL%20SERIES_M15.pdf
RS1BL RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
товар відсутній
RS1BLHMQG RS1AL%20SERIES_N2103.pdf
RS1BLHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
RS1BLHMTG RS1AL%20SERIES_M15.pdf
RS1BLHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
товар відсутній
RS1BLHRQG RS1AL%20SERIES_M15.pdf
RS1BLHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
товар відсутній
RS1BLHRTG RS1AL%20SERIES_N2103.pdf
RS1BLHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
RS1DL RQG RS1AL%20SERIES_N2103.pdf
RS1DL RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 200V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RS1DL RTG RS1AL%20SERIES_N2103.pdf
RS1DL RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 200V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RS1DLHRQG RS1AL%20SERIES_N2103.pdf
RS1DLHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 200V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RS1KL MQG RS1AL%20SERIES_N2103.pdf
RS1KL MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 800MA SUBSMA
товар відсутній
RS1KL MTG RS1AL%20SERIES_N2103.pdf
RS1KL MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KL RQG RS1AL%20SERIES_N2103.pdf
RS1KL RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KL RTG RS1AL%20SERIES_N2103.pdf
RS1KL RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KLHRQG RS1AL%20SERIES_M15.pdf
RS1KLHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 800MA SUBSMA
товар відсутній
RSFGL RQG RSFAL%20SERIES_L15.pdf
RSFGL RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 500MA SUBSMA
товар відсутній
RSFGL RTG RSFAL%20SERIES_L15.pdf
RSFGL RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 500MA SUBSMA
товар відсутній
S1GL RQG S1AL%20SERIES_O15.pdf
S1GL RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
товар відсутній
SS110L MQG SS12L%20SERIES_P15.pdf
SS110L MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS110L MTG SS12L%20SERIES_P15.pdf
SS110L MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS110L RQG SS12L%20SERIES_P15.pdf
SS110L RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS110L RTG SS12L%20SERIES_P15.pdf
SS110L RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS110LHMQG SS12L%20SERIES_P15.pdf
SS110LHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS110LHMTG SS12L%20SERIES_P15.pdf
SS110LHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS110LHRQG SS12L%20SERIES_P15.pdf
SS110LHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS110LHRTG SS12L%20SERIES_P15.pdf
SS110LHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
товар відсутній
SS14L MQG SS12L SERIES_Q2103.pdf
SS14L MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
SS14L MTG SS12L SERIES_Q2103.pdf
SS14L MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
SS14L RQG SS12L SERIES_Q2103.pdf
SS14L RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
SS14L RTG SS12L SERIES_Q2103.pdf
SS14L RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
SS14LHMQG SS12L SERIES_Q2103.pdf
SS14LHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
товар відсутній
SS14LHMTG SS12L SERIES_Q2103.pdf
SS14LHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
товар відсутній
SS14LHRQG SS12L SERIES_Q2103.pdf
SS14LHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
товар відсутній
SS14LHRTG SS12L SERIES_Q2103.pdf
SS14LHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
товар відсутній
SS16L MQG SS12L%20SERIES_P15.pdf
SS16L MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
товар відсутній
SS16L MTG SS12L SERIES_Q2103.pdf
SS16L MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товар відсутній
SS16L RQG SS12L SERIES_Q2103.pdf
SS16L RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товар відсутній
SS16L RTG SS12L SERIES_Q2103.pdf
SS16L RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товар відсутній
SS16LHMQG SS12L SERIES_Q2103.pdf
SS16LHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товар відсутній
SS16LHMTG SS12L SERIES_Q2103.pdf
SS16LHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товар відсутній
SS16LHRQG SS12L SERIES_Q2103.pdf
SS16LHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товар відсутній
SS16LHRTG SS12L SERIES_Q2103.pdf
SS16LHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
товар відсутній
SS210L MQG SS22L-SS215L_O2103.pdf
SS210L MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SS210L MTG SS22L-SS215L_O2103.pdf
SS210L MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SS210L RQG SS22L-SS215L_O2103.pdf
SS210L RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SS210L RTG SS22L-SS215L_O2103.pdf
SS210L RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
товар відсутній
SS210LHMQG SS22L-SS215L_O2103.pdf
SS210LHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
товар відсутній
SS210LHMTG SS22L-SS215L_O2103.pdf
SS210LHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
товар відсутній
SS210LHRQG SS22L%20SERIES_N15.pdf
SS210LHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
товар відсутній
SS210LHRTG SS22L-SS215L_O2103.pdf
SS210LHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SS22L MQG SS22L%20SERIES_N15.pdf
SS22L MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
товар відсутній
SS22L MTG SS22L%20SERIES_N15.pdf
SS22L MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
товар відсутній
SS22L RQG SS22L%20SERIES_N15.pdf
SS22L RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
товар відсутній
SS22L RTG SS22L%20SERIES_N15.pdf
SS22L RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
товар відсутній
SS22LHMQG SS22L%20SERIES_N15.pdf
SS22LHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
товар відсутній
SS22LHMTG SS22L%20SERIES_N15.pdf
SS22LHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
товар відсутній
SS22LHRQG SS22L%20SERIES_N15.pdf
SS22LHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
товар відсутній
SS22LHRTG SS22L%20SERIES_N15.pdf
SS22LHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
товар відсутній
SS24L RQG SS22L-SS215L_O2103.pdf
SS24L RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
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