Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Сторінка 19 з 217
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
CRF02(TE85L,Q) | Toshiba Semiconductor and Storage |
 Description: DIODE GEN PURP 800V 500MA SFLAT |
товар відсутній |
|
|
|
CRF03(TE85L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 600V 700MA SFLAT |
товар відсутній |
|
|
|
CRG01(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 100V 700MA SFLAT |
товар відсутній |
|
|
|
CRG02(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 700MA SFLAT |
товар відсутній |
|
|
|
CRG02(TE85R,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 700MA SFLAT |
товар відсутній |
|
|
|
CRG03(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 1A SFLAT |
товар відсутній |
|
|
|
CRG04(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 600V 1A SFLAT |
товар відсутній |
|
|
|
CRG05(TE85L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 800V 1A SFLAT |
товар відсутній |
|
|
|
CRS03(TE85R,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A SFLAT |
товар відсутній |
|
|
|
CRS08(TE85R,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1.5A SFLAT |
товар відсутній |
|
| CRY62(TE85L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 6.2V 700MW SFLAT |
товар відсутній |
||
| CRZ18(TE85L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 18V 700MW SFLAT |
товар відсутній |
||
 |
CUS01(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A USFLAT |
товар відсутній |
|
|
|
CUS01(TE85R,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A USFLAT |
товар відсутній |
|
 |
CUS02(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A US-FLAT Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: US-FLAT (1.25x2.5) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
товар відсутній |
|
|
|
CUS02(TE85R,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A USFLAT |
товар відсутній |
|
|
|
CUS03(TE85L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 700MA USFLAT |
товар відсутній |
|
|
|
CUS04(TE85L,Q) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 700MA USFLAT |
товар відсутній |
|
 |
TA48025BF(T6L1,NQ) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.5V 1A PW-MOLD |
товар відсутній |
|
|
|
TA48M033F(TE16L,SQ | Toshiba Semiconductor and Storage |
Description: IC REG LDO 3.3V 0.5A PWMOLD |
товар відсутній |
|
|
|
TA48M05F(TE16L,SQ) | Toshiba Semiconductor and Storage |
Description: IC REG LDO 5V 0.5A PWMOLD |
товар відсутній |
|
 |
TA58L05F(TE16L1,NQ | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 250MA PW-MOLD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 29V Number of Regulators: 1 Supplier Device Package: PW-MOLD Voltage - Output (Min/Fixed): 5V Control Features: Enable Voltage Dropout (Max): 0.4V @ 200mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 50 mA |
товар відсутній |
|
 |
TA58L05S(Q) | Toshiba Semiconductor and Storage |
Description: IC REG LDO 5V 0.25A 3HSIP |
товар відсутній |
|
|
|
TA58L08F(TE16L1,NQ | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 8V 250MA PW-MOLD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 29V Number of Regulators: 1 Supplier Device Package: PW-MOLD Voltage - Output (Min/Fixed): 8V Control Features: Enable Voltage Dropout (Max): 0.4V @ 200mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 50 mA |
товар відсутній |
|
 |
TA58LT00F(T6L1,Q) | Toshiba Semiconductor and Storage |
Description: IC REG LDO ADJ 0.15A 5HSIP |
товар відсутній |
|
|
|
TA58M05F(TE16L1,NQ | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 500MA PW-MOLD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 29V Number of Regulators: 1 Supplier Device Package: PW-MOLD Voltage - Output (Min/Fixed): 5V Voltage Dropout (Max): 0.65V @ 500mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 80 mA |
товар відсутній |
|
|
|
TA58M08F(TE16L1,NQ | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 8V 500MA PW-MOLD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 29V Number of Regulators: 1 Supplier Device Package: PW-MOLD Voltage - Output (Min/Fixed): 8V Voltage Dropout (Max): 0.65V @ 500mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 80 mA |
товар відсутній |
|
|
|
TA58M10F(TE16L1,NQ | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 10V 500MA PW-MOLD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1.2 mA Voltage - Input (Max): 29V Number of Regulators: 1 Supplier Device Package: PW-MOLD Voltage - Output (Min/Fixed): 10V Voltage Dropout (Max): 0.65V @ 500mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 80 mA |
товар відсутній |
|
|
|
TA58M12F(TE16L1,NQ | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 12V 500MA PW-MOLD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 105°C Output Configuration: Positive Current - Quiescent (Iq): 1.2 mA Voltage - Input (Max): 29V Number of Regulators: 1 Supplier Device Package: PW-MOLD Voltage - Output (Min/Fixed): 12V Voltage Dropout (Max): 0.65V @ 500mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 80 mA |
товар відсутній |
|
 |
TA76431S(TE6,F,M) | Toshiba Semiconductor and Storage |
Description: IC VREF SHUNT ADJ LSTM |
товар відсутній |
|
 |
TA78DS05AF(TE12L,F | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 5V 30MA PW-MINI |
товар відсутній |
|
 |
TA78L015AP(F,M) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 15V 150MA LSTM Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: LSTM Voltage - Output (Min/Fixed): 15V Part Status: Obsolete PSRR: 41dB (120Hz) Protection Features: Over Current, Over Temperature Current - Supply (Max): 6.5 mA |
товар відсутній |
|
 |
TA78L05F(TE12L,F) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 5V 150MA PW-MINI Packaging: Tape & Reel (TR) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 5.5 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: PW-MINI (SOT-89) Voltage - Output (Min/Fixed): 5V Part Status: Obsolete PSRR: 49dB (120Hz) Protection Features: Over Current, Over Temperature Current - Supply (Max): 6 mA |
товар відсутній |
|
|
|
TA78L09F(TE12L,F) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 9V 150MA PW-MINI Packaging: Tape & Reel (TR) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: PW-MINI (SOT-89) Voltage - Output (Min/Fixed): 9V Part Status: Obsolete PSRR: 44dB (120Hz) Protection Features: Over Current, Over Temperature Current - Supply (Max): 6.5 mA |
товар відсутній |
|
|
|
TA78L12F(TE12L,F) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 12V 150MA PW-MINI Packaging: Tape & Reel (TR) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: PW-MINI (SOT-89) Voltage - Output (Min/Fixed): 12V Part Status: Obsolete PSRR: 41dB (120Hz) Protection Features: Over Current, Over Temperature Current - Supply (Max): 6.5 mA |
товар відсутній |
|
| TA78L12PF(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 12V 150MA PS-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: PS-8 (2.9x2.4) Voltage - Output (Min/Fixed): 12V PSRR: 41dB (120Hz) Voltage Dropout (Max): 2V @ 150mA (Typ) Protection Features: Over Current, Over Temperature Current - Supply (Max): 6.5 mA |
товар відсутній |
||
|
|
TA78L15F(TE12L,F) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 15V 150MA PW-MINI Packaging: Tape & Reel (TR) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: PW-MINI (SOT-89) Voltage - Output (Min/Fixed): 15V Part Status: Obsolete PSRR: 40dB (120Hz) Protection Features: Over Current, Over Temperature Current - Supply (Max): 6.5 mA |
товар відсутній |
|
|
|
TA78M15F(Q) | Toshiba Semiconductor and Storage |
Description: IC REG LDO 15V 0.5A PWMOLD |
товар відсутній |
|
| TB7102F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC REG BUCK ADJ 1A SYNC 8SON |
товар відсутній |
||
 |
TK12A60U(Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 12A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220SIS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V |
товар відсутній |
|
 |
TK12J60U(F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 12A TO3P Packaging: Tray Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-3P(N) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V |
товар відсутній |
|
| TK12X60U(TE24L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 12A TFP |
товар відсутній |
||
 |
TK15J60U(F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 15A TO3P Packaging: Tray Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-3P(N) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V |
товар відсутній |
|
| TK15X60U(TE24L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 15A TFP |
товар відсутній |
||
 |
TK20J60U(F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 20A TO3P Packaging: Tray Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-3P(N) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 10 V |
товар відсутній |
|
| TK20X60U(TE24L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 20A TFP |
товар відсутній |
||
 |
TK55D10J1(Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 55A TO220W |
товар відсутній |
|
|
|
TK60D08J1(Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 75V 60A TO220W |
товар відсутній |
|
|
|
TK70D06J1(Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 70A TO220W |
товар відсутній |
|
 |
TPC6006-H(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 3.9A VS-6 |
товар відсутній |
|
| TPC6103(TE85L,F,M) | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 5.5A VS6 2-3T1A |
товар відсутній |
||
 |
TPC6104(TE85L,F,M) | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 5.5A VS-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 2.8A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: VS-6 (2.9x2.8) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 10 V |
товар відсутній |
|
| TPC6107(TE85L,F,M) | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 4.5A VS6 2-3T1A |
товар відсутній |
||
| TPC6601(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A VS6 2-3T1A |
товар відсутній |
||
| TPC6701(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 1A 6VS |
товар відсутній |
||
|
|
TPC6901(TE85L,F,M) | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP 50V 6VS Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: 150°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 1A, 700mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V Supplier Device Package: VS-6 (2.9x2.8) |
товар відсутній |
|
| TPC6K01(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 400V 300MA VS6 |
товар відсутній |
||
 |
TPC8014(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 11A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 5.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP (5.5x6.0) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V |
товар відсутній |
|
|
|
TPC8018-H(TE12LQM) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 18A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 9A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 8-SOP (5.5x6.0) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 10 V |
товар відсутній |
|
 |
TPC8020-H(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 13A SOP8 2-6J1B |
товар відсутній |
| CRF02(TE85L,Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 800V 500MA SFLAT
Description: DIODE GEN PURP 800V 500MA SFLAT
товар відсутній
| CRF03(TE85L,Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 600V 700MA SFLAT
Description: DIODE GEN PURP 600V 700MA SFLAT
товар відсутній
| CRG01(TE85L,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 100V 700MA SFLAT
Description: DIODE GEN PURP 100V 700MA SFLAT
товар відсутній
| CRG02(TE85L,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 700MA SFLAT
Description: DIODE GEN PURP 400V 700MA SFLAT
товар відсутній
| CRG02(TE85R,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 700MA SFLAT
Description: DIODE GEN PURP 400V 700MA SFLAT
товар відсутній
| CRG03(TE85L,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 1A SFLAT
Description: DIODE GEN PURP 400V 1A SFLAT
товар відсутній
| CRG04(TE85L,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 600V 1A SFLAT
Description: DIODE GEN PURP 600V 1A SFLAT
товар відсутній
| CRG05(TE85L,Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 800V 1A SFLAT
Description: DIODE GEN PURP 800V 1A SFLAT
товар відсутній
| CRS03(TE85R,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT
Description: DIODE SCHOTTKY 30V 1A SFLAT
товар відсутній
| CRS08(TE85R,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A SFLAT
Description: DIODE SCHOTTKY 30V 1.5A SFLAT
товар відсутній
| CRY62(TE85L,Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 6.2V 700MW SFLAT
Description: DIODE ZENER 6.2V 700MW SFLAT
товар відсутній
| CRZ18(TE85L,Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 18V 700MW SFLAT
Description: DIODE ZENER 18V 700MW SFLAT
товар відсутній
| CUS01(TE85L,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A USFLAT
Description: DIODE SCHOTTKY 30V 1A USFLAT
товар відсутній
| CUS01(TE85R,Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A USFLAT
Description: DIODE SCHOTTKY 30V 1A USFLAT
товар відсутній
| CUS02(TE85L,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A US-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: US-FLAT (1.25x2.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A US-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: US-FLAT (1.25x2.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
товар відсутній
| CUS02(TE85R,Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A USFLAT
Description: DIODE SCHOTTKY 30V 1A USFLAT
товар відсутній
| CUS03(TE85L,Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 700MA USFLAT
Description: DIODE SCHOTTKY 40V 700MA USFLAT
товар відсутній
| CUS04(TE85L,Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 700MA USFLAT
Description: DIODE SCHOTTKY 60V 700MA USFLAT
товар відсутній
| TA48025BF(T6L1,NQ) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 1A PW-MOLD
Description: IC REG LINEAR 2.5V 1A PW-MOLD
товар відсутній
| TA48M033F(TE16L,SQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 3.3V 0.5A PWMOLD
Description: IC REG LDO 3.3V 0.5A PWMOLD
товар відсутній
| TA48M05F(TE16L,SQ) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 5V 0.5A PWMOLD
Description: IC REG LDO 5V 0.5A PWMOLD
товар відсутній
| TA58L05F(TE16L1,NQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
Description: IC REG LINEAR 5V 250MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
товар відсутній
| TA58L05S(Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 5V 0.25A 3HSIP
Description: IC REG LDO 5V 0.25A 3HSIP
товар відсутній
| TA58L08F(TE16L1,NQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 250MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 8V
Control Features: Enable
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
Description: IC REG LINEAR 8V 250MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 8V
Control Features: Enable
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
товар відсутній
| TA58LT00F(T6L1,Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO ADJ 0.15A 5HSIP
Description: IC REG LDO ADJ 0.15A 5HSIP
товар відсутній
| TA58M05F(TE16L1,NQ |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
Description: IC REG LINEAR 5V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
товар відсутній
| TA58M08F(TE16L1,NQ |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 8V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
Description: IC REG LINEAR 8V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 8V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
товар відсутній
| TA58M10F(TE16L1,NQ |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 10V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 10V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
Description: IC REG LINEAR 10V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 10V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
товар відсутній
| TA58M12F(TE16L1,NQ |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 12V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 12V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
Description: IC REG LINEAR 12V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 12V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
товар відсутній
| TA76431S(TE6,F,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC VREF SHUNT ADJ LSTM
Description: IC VREF SHUNT ADJ LSTM
товар відсутній
| TA78DS05AF(TE12L,F |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 30MA PW-MINI
Description: IC REG LINEAR 5V 30MA PW-MINI
товар відсутній
| TA78L015AP(F,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 15V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 41dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
Description: IC REG LINEAR 15V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 41dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
товар відсутній
| TA78L05F(TE12L,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 5V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
товар відсутній
| TA78L09F(TE12L,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 9V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 9V
Part Status: Obsolete
PSRR: 44dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
Description: IC REG LINEAR 9V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 9V
Part Status: Obsolete
PSRR: 44dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
товар відсутній
| TA78L12F(TE12L,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 12V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
PSRR: 41dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
Description: IC REG LINEAR 12V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
PSRR: 41dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
товар відсутній
| TA78L12PF(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 12V 150MA PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PS-8 (2.9x2.4)
Voltage - Output (Min/Fixed): 12V
PSRR: 41dB (120Hz)
Voltage Dropout (Max): 2V @ 150mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
Description: IC REG LINEAR 12V 150MA PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PS-8 (2.9x2.4)
Voltage - Output (Min/Fixed): 12V
PSRR: 41dB (120Hz)
Voltage Dropout (Max): 2V @ 150mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
товар відсутній
| TA78L15F(TE12L,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 15V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 40dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
Description: IC REG LINEAR 15V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 40dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
товар відсутній
| TA78M15F(Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 15V 0.5A PWMOLD
Description: IC REG LDO 15V 0.5A PWMOLD
товар відсутній
| TB7102F(TE85L,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 1A SYNC 8SON
Description: IC REG BUCK ADJ 1A SYNC 8SON
товар відсутній
| TK12A60U(Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
Description: MOSFET N-CH 600V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
товар відсутній
| TK12J60U(F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 12A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
Description: MOSFET N-CH 600V 12A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
товар відсутній
| TK12X60U(TE24L,Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 12A TFP
Description: MOSFET N-CH 600V 12A TFP
товар відсутній
| TK15J60U(F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Description: MOSFET N-CH 600V 15A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
товар відсутній
| TK15X60U(TE24L,Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15A TFP
Description: MOSFET N-CH 600V 15A TFP
товар відсутній
| TK20J60U(F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 10 V
Description: MOSFET N-CH 600V 20A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 10 V
товар відсутній
| TK20X60U(TE24L,Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TFP
Description: MOSFET N-CH 600V 20A TFP
товар відсутній
| TK55D10J1(Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A TO220W
Description: MOSFET N-CH 100V 55A TO220W
товар відсутній
| TK60D08J1(Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 60A TO220W
Description: MOSFET N-CH 75V 60A TO220W
товар відсутній
| TK70D06J1(Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 70A TO220W
Description: MOSFET N-CH 60V 70A TO220W
товар відсутній
| TPC6006-H(TE85L,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 3.9A VS-6
Description: MOSFET N-CH 40V 3.9A VS-6
товар відсутній
| TPC6103(TE85L,F,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 5.5A VS6 2-3T1A
Description: MOSFET P-CH 12V 5.5A VS6 2-3T1A
товар відсутній
| TPC6104(TE85L,F,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 10 V
Description: MOSFET P-CH 20V 5.5A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 10 V
товар відсутній
| TPC6107(TE85L,F,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.5A VS6 2-3T1A
Description: MOSFET P-CH 20V 4.5A VS6 2-3T1A
товар відсутній
| TPC6601(TE85L,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A VS6 2-3T1A
Description: TRANS PNP 50V 2A VS6 2-3T1A
товар відсутній
| TPC6701(TE85L,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 1A 6VS
Description: TRANS 2NPN 50V 1A 6VS
товар відсутній
| TPC6901(TE85L,F,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 6VS
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A, 700mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V
Supplier Device Package: VS-6 (2.9x2.8)
Description: TRANS NPN/PNP 50V 6VS
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A, 700mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V
Supplier Device Package: VS-6 (2.9x2.8)
товар відсутній
| TPC6K01(TE85L,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 300MA VS6
Description: DIODE ARRAY GP 400V 300MA VS6
товар відсутній
| TPC8014(TE12L,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
товар відсутній
| TPC8018-H(TE12LQM) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 10 V
Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 10 V
товар відсутній
| TPC8020-H(TE12L,Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 13A SOP8 2-6J1B
Description: MOSFET N-CH 30V 13A SOP8 2-6J1B
товар відсутній