Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13432) > Сторінка 19 з 224

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CRG04(TE85L,Q,M) CRG04(TE85L,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=CRG04 Description: DIODE GEN PURP 600V 1A SFLAT
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CRG05(TE85L,Q) CRG05(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=CRG05 Description: DIODE GEN PURP 800V 1A SFLAT
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CRS03(TE85R,Q,M) CRS03(TE85R,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=3159&prodName=CRS03 Description: DIODE SCHOTTKY 30V 1A SFLAT
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CRS08(TE85R,Q,M) CRS08(TE85R,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=3168&prodName=CRS08 Description: DIODE SCHOTTKY 30V 1.5A SFLAT
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CRY62(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 6.2V 700MW SFLAT
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CRZ18(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY62 Description: DIODE ZENER 18V 700MW SFLAT
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CUS01(TE85L,Q,M) CUS01(TE85L,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=3177&prodName=CUS01 Description: DIODE SCHOTTKY 30V 1A USFLAT
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CUS01(TE85R,Q) CUS01(TE85R,Q) Toshiba Semiconductor and Storage docget.jsp?did=3177&prodName=CUS01 Description: DIODE SCHOTTKY 30V 1A USFLAT
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CUS02(TE85L,Q,M) CUS02(TE85L,Q,M) Toshiba Semiconductor and Storage CUS02_datasheet_en_20150716.pdf?did=3180&prodName=CUS02 Description: DIODE SCHOTTKY 30V 1A US-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: US-FLAT (1.25x2.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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CUS02(TE85R,Q) CUS02(TE85R,Q) Toshiba Semiconductor and Storage docget.jsp?did=3180&prodName=CUS02 Description: DIODE SCHOTTKY 30V 1A USFLAT
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CUS03(TE85L,Q) CUS03(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=732&prodName=CUS03 Description: DIODE SCHOTTKY 40V 700MA USFLAT
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CUS04(TE85L,Q) CUS04(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=733&prodName=CUS04 Description: DIODE SCHOTTKY 60V 700MA USFLAT
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TA48025BF(T6L1,NQ) TA48025BF(T6L1,NQ) Toshiba Semiconductor and Storage docget.jsp?did=8515&prodName=TA48025BF Description: IC REG LINEAR 2.5V 1A PW-MOLD
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TA48M033F(TE16L,SQ TA48M033F(TE16L,SQ Toshiba Semiconductor and Storage docget.jsp?did=18328&prodName=TA48M033F Description: IC REG LDO 3.3V 0.5A PWMOLD
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TA48M05F(TE16L,SQ) TA48M05F(TE16L,SQ) Toshiba Semiconductor and Storage docget.jsp?did=18328&prodName=TA48M033F Description: IC REG LDO 5V 0.5A PWMOLD
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TA58L05F(TE16L1,NQ TA58L05F(TE16L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=7101&prodName=TA58L05F Description: IC REG LINEAR 5V 250MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
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TA58L05S(Q) TA58L05S(Q) Toshiba Semiconductor and Storage docget.jsp?did=6109&prodName=TA58L05S Description: IC REG LDO 5V 0.25A 3HSIP
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TA58L08F(TE16L1,NQ TA58L08F(TE16L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=7101&prodName=TA58L05F Description: IC REG LINEAR 8V 250MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 8V
Control Features: Enable
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
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TA58LT00F(T6L1,Q) TA58LT00F(T6L1,Q) Toshiba Semiconductor and Storage Description: IC REG LIN POS ADJ 150MA 5-HSIP
Packaging: Tape & Reel (TR)
Package / Case: TO-252-6, DPak (5 Leads + Tab)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.8 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 5-HSIP
Voltage - Output (Max): 13.4V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
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TA58M05F(TE16L1,NQ TA58M05F(TE16L1,NQ Toshiba Semiconductor and Storage Description: IC REG LINEAR 5V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
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TA58M08F(TE16L1,NQ TA58M08F(TE16L1,NQ Toshiba Semiconductor and Storage Description: IC REG LINEAR 8V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 8V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
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TA58M10F(TE16L1,NQ TA58M10F(TE16L1,NQ Toshiba Semiconductor and Storage Description: IC REG LINEAR 10V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 10V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
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TA58M12F(TE16L1,NQ TA58M12F(TE16L1,NQ Toshiba Semiconductor and Storage Description: IC REG LINEAR 12V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 12V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
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TA76431S(TE6,F,M) TA76431S(TE6,F,M) Toshiba Semiconductor and Storage docget.jsp?did=18378&prodName=TA76431S Description: IC VREF SHUNT ADJ LSTM
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TA78DS05AF(TE12L,F TA78DS05AF(TE12L,F Toshiba Semiconductor and Storage Description: IC REG LINEAR 5V 30MA PW-MINI
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TA78L015AP(F,M) TA78L015AP(F,M) Toshiba Semiconductor and Storage TA78LyyyAP.pdf Description: IC REG LINEAR 15V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 41dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
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TA78L05F(TE12L,F) TA78L05F(TE12L,F) Toshiba Semiconductor and Storage TA78LxxF.pdf Description: IC REG LINEAR 5V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
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TA78L09F(TE12L,F) TA78L09F(TE12L,F) Toshiba Semiconductor and Storage TA78LxxF.pdf Description: IC REG LINEAR 9V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 9V
Part Status: Obsolete
PSRR: 44dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
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TA78L12F(TE12L,F) TA78L12F(TE12L,F) Toshiba Semiconductor and Storage TA78LxxF.pdf Description: IC REG LINEAR 12V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
PSRR: 41dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
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TA78L12PF(TE85L,F) Toshiba Semiconductor and Storage Description: IC REG LINEAR 12V 150MA PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PS-8 (2.9x2.4)
Voltage - Output (Min/Fixed): 12V
PSRR: 41dB (120Hz)
Voltage Dropout (Max): 2V @ 150mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
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TA78L15F(TE12L,F) TA78L15F(TE12L,F) Toshiba Semiconductor and Storage TA78LxxF.pdf Description: IC REG LINEAR 15V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 40dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
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TA78M15F(Q) TA78M15F(Q) Toshiba Semiconductor and Storage docget.jsp?did=18323&prodName=TA78M05F Description: IC REG LDO 15V 0.5A PWMOLD
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TB7102F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?pid=TB7102F&lang=en&type=datasheet Description: IC REG BUCK ADJ 1A SYNC 8SON
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TK12A60U(Q,M) TK12A60U(Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
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TK12J60U(F) TK12J60U(F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 12A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
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TK12X60U(TE24L,Q) Toshiba Semiconductor and Storage docget.jsp?did=841&prodName=TK12X60U Description: MOSFET N-CH 600V 12A TFP
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TK15J60U(F) TK15J60U(F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 15A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
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TK15X60U(TE24L,Q) Toshiba Semiconductor and Storage tk15x60u.pdf Description: MOSFET N-CH 600V 15A TFP
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TK20J60U(F) TK20J60U(F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 20A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 10 V
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TK20X60U(TE24L,Q) Toshiba Semiconductor and Storage docget.jsp?did=904&prodName=TK20X60U Description: MOSFET N-CH 600V 20A TFP
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TK55D10J1(Q) TK55D10J1(Q) Toshiba Semiconductor and Storage TK55D10J1.pdf Description: MOSFET N-CH 100V 55A TO220W
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TK60D08J1(Q) TK60D08J1(Q) Toshiba Semiconductor and Storage TK60D08J1.pdf Description: MOSFET N-CH 75V 60A TO220W
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TK70D06J1(Q) TK70D06J1(Q) Toshiba Semiconductor and Storage TK70A06J1.pdf Description: MOSFET N-CH 60V 70A TO220W
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TPC6006-H(TE85L,F) TPC6006-H(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=11065&prodName=TPC6006-H Description: MOSFET N-CH 40V 3.9A VS-6
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TPC6103(TE85L,F,M) Toshiba Semiconductor and Storage docget.jsp?did=15895&prodName=TPC6103 Description: MOSFET P-CH 12V 5.5A VS6 2-3T1A
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TPC6104(TE85L,F,M) TPC6104(TE85L,F,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 20V 5.5A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 10 V
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TPC6107(TE85L,F,M) Toshiba Semiconductor and Storage docget.jsp?pid=TPC6107&lang=en&type=datasheet Description: MOSFET P-CH 20V 4.5A VS6 2-3T1A
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TPC6601(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20764&prodName=TPC6601 Description: TRANS PNP 50V 2A VS6 2-3T1A
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TPC6701(TE85L,F) Toshiba Semiconductor and Storage TPC6701.pdf Description: TRANS 2NPN 50V 1A 6VS
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TPC6901(TE85L,F,M) TPC6901(TE85L,F,M) Toshiba Semiconductor and Storage TPC6901.pdf Description: TRANS NPN/PNP 50V 6VS
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A, 700mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V
Supplier Device Package: VS-6 (2.9x2.8)
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TPC6K01(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=6074&prodName=TPC6K01 Description: DIODE ARRAY GP 400V 300MA VS6
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TPC8014(TE12L,Q,M) TPC8014(TE12L,Q,M) Toshiba Semiconductor and Storage TPC8014.pdf Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
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TPC8018-H(TE12LQM) TPC8018-H(TE12LQM) Toshiba Semiconductor and Storage TPC8018-H.pdf Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 10 V
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TPC8020-H(TE12L,Q) TPC8020-H(TE12L,Q) Toshiba Semiconductor and Storage TPC8020-H.pdf Description: MOSFET N-CH 30V 13A SOP8 2-6J1B
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TPC8021-H(TE12LQ,M TPC8021-H(TE12LQ,M Toshiba Semiconductor and Storage TPC8021-H.pdf Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
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TPC8022-H(TE12LQ,M TPC8022-H(TE12LQ,M Toshiba Semiconductor and Storage TPC8022-H.pdf Description: MOSFET N-CH 40V 7.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 3.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
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TPC8031-H(TE12LQM) TPC8031-H(TE12LQM) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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TPC8031-H(TE12L,Q) TPC8031-H(TE12L,Q) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 11A SOP8 2-6J1B
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TPC8032-H(TE12LQM) TPC8032-H(TE12LQM) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 15A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2846 pF @ 10 V
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TPC8033-H(TE12LQM) TPC8033-H(TE12LQM) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 17A 8SOP
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CRG04(TE85L,Q,M) docget.jsp?type=datasheet&lang=en&pid=CRG04
CRG04(TE85L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 600V 1A SFLAT
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CRG05(TE85L,Q) docget.jsp?type=datasheet&lang=en&pid=CRG05
CRG05(TE85L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 800V 1A SFLAT
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CRS03(TE85R,Q,M) docget.jsp?did=3159&prodName=CRS03
CRS03(TE85R,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT
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CRS08(TE85R,Q,M) docget.jsp?did=3168&prodName=CRS08
CRS08(TE85R,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A SFLAT
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CRY62(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 6.2V 700MW SFLAT
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CRZ18(TE85L,Q) docget.jsp?did=3175&prodName=CRY62
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 18V 700MW SFLAT
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CUS01(TE85L,Q,M) docget.jsp?did=3177&prodName=CUS01
CUS01(TE85L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A USFLAT
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CUS01(TE85R,Q) docget.jsp?did=3177&prodName=CUS01
CUS01(TE85R,Q)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A USFLAT
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CUS02(TE85L,Q,M) CUS02_datasheet_en_20150716.pdf?did=3180&prodName=CUS02
CUS02(TE85L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A US-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: US-FLAT (1.25x2.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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CUS02(TE85R,Q) docget.jsp?did=3180&prodName=CUS02
CUS02(TE85R,Q)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A USFLAT
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CUS03(TE85L,Q) docget.jsp?did=732&prodName=CUS03
CUS03(TE85L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 700MA USFLAT
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CUS04(TE85L,Q) docget.jsp?did=733&prodName=CUS04
CUS04(TE85L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 700MA USFLAT
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TA48025BF(T6L1,NQ) docget.jsp?did=8515&prodName=TA48025BF
TA48025BF(T6L1,NQ)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 1A PW-MOLD
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TA48M033F(TE16L,SQ docget.jsp?did=18328&prodName=TA48M033F
TA48M033F(TE16L,SQ
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 3.3V 0.5A PWMOLD
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TA48M05F(TE16L,SQ) docget.jsp?did=18328&prodName=TA48M033F
TA48M05F(TE16L,SQ)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 5V 0.5A PWMOLD
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TA58L05F(TE16L1,NQ docget.jsp?did=7101&prodName=TA58L05F
TA58L05F(TE16L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
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TA58L05S(Q) docget.jsp?did=6109&prodName=TA58L05S
TA58L05S(Q)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 5V 0.25A 3HSIP
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TA58L08F(TE16L1,NQ docget.jsp?did=7101&prodName=TA58L05F
TA58L08F(TE16L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 250MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 8V
Control Features: Enable
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
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TA58LT00F(T6L1,Q)
TA58LT00F(T6L1,Q)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LIN POS ADJ 150MA 5-HSIP
Packaging: Tape & Reel (TR)
Package / Case: TO-252-6, DPak (5 Leads + Tab)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.8 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 5-HSIP
Voltage - Output (Max): 13.4V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
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TA58M05F(TE16L1,NQ
TA58M05F(TE16L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
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TA58M08F(TE16L1,NQ
TA58M08F(TE16L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 8V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
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TA58M10F(TE16L1,NQ
TA58M10F(TE16L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 10V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 10V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
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TA58M12F(TE16L1,NQ
TA58M12F(TE16L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 12V 500MA PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.2 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: PW-MOLD
Voltage - Output (Min/Fixed): 12V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
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TA76431S(TE6,F,M) docget.jsp?did=18378&prodName=TA76431S
TA76431S(TE6,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: IC VREF SHUNT ADJ LSTM
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TA78DS05AF(TE12L,F
TA78DS05AF(TE12L,F
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 30MA PW-MINI
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TA78L015AP(F,M) TA78LyyyAP.pdf
TA78L015AP(F,M)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 15V 150MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 41dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
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TA78L05F(TE12L,F) TA78LxxF.pdf
TA78L05F(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 49dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
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TA78L09F(TE12L,F) TA78LxxF.pdf
TA78L09F(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 9V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 9V
Part Status: Obsolete
PSRR: 44dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
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TA78L12F(TE12L,F) TA78LxxF.pdf
TA78L12F(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 12V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
PSRR: 41dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
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TA78L12PF(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 12V 150MA PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PS-8 (2.9x2.4)
Voltage - Output (Min/Fixed): 12V
PSRR: 41dB (120Hz)
Voltage Dropout (Max): 2V @ 150mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
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TA78L15F(TE12L,F) TA78LxxF.pdf
TA78L15F(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 15V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 40dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
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TA78M15F(Q) docget.jsp?did=18323&prodName=TA78M05F
TA78M15F(Q)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 15V 0.5A PWMOLD
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TB7102F(TE85L,F) docget.jsp?pid=TB7102F&lang=en&type=datasheet
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 1A SYNC 8SON
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TK12A60U(Q,M) Mosfets_Prod_Guide.pdf
TK12A60U(Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
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TK12J60U(F) Mosfets_Prod_Guide.pdf
TK12J60U(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 12A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
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TK12X60U(TE24L,Q) docget.jsp?did=841&prodName=TK12X60U
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 12A TFP
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TK15J60U(F) Mosfets_Prod_Guide.pdf
TK15J60U(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
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TK15X60U(TE24L,Q) tk15x60u.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15A TFP
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TK20J60U(F) Mosfets_Prod_Guide.pdf
TK20J60U(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 10 V
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TK20X60U(TE24L,Q) docget.jsp?did=904&prodName=TK20X60U
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TFP
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TK55D10J1(Q) TK55D10J1.pdf
TK55D10J1(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A TO220W
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TK60D08J1(Q) TK60D08J1.pdf
TK60D08J1(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 60A TO220W
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TK70D06J1(Q) TK70A06J1.pdf
TK70D06J1(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 70A TO220W
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TPC6006-H(TE85L,F) docget.jsp?did=11065&prodName=TPC6006-H
TPC6006-H(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 3.9A VS-6
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TPC6103(TE85L,F,M) docget.jsp?did=15895&prodName=TPC6103
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 5.5A VS6 2-3T1A
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TPC6104(TE85L,F,M) Mosfets_Prod_Guide.pdf
TPC6104(TE85L,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 10 V
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TPC6107(TE85L,F,M) docget.jsp?pid=TPC6107&lang=en&type=datasheet
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.5A VS6 2-3T1A
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TPC6601(TE85L,F) docget.jsp?did=20764&prodName=TPC6601
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A VS6 2-3T1A
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TPC6701(TE85L,F) TPC6701.pdf
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 1A 6VS
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TPC6901(TE85L,F,M) TPC6901.pdf
TPC6901(TE85L,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 6VS
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A, 700mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V
Supplier Device Package: VS-6 (2.9x2.8)
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TPC6K01(TE85L,F) docget.jsp?did=6074&prodName=TPC6K01
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 300MA VS6
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TPC8014(TE12L,Q,M) TPC8014.pdf
TPC8014(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
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TPC8018-H(TE12LQM) TPC8018-H.pdf
TPC8018-H(TE12LQM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 10 V
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TPC8020-H(TE12L,Q) TPC8020-H.pdf
TPC8020-H(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 13A SOP8 2-6J1B
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TPC8021-H(TE12LQ,M TPC8021-H.pdf
TPC8021-H(TE12LQ,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
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TPC8022-H(TE12LQ,M TPC8022-H.pdf
TPC8022-H(TE12LQ,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 7.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 3.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
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TPC8031-H(TE12LQM) Mosfets_Prod_Guide.pdf
TPC8031-H(TE12LQM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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TPC8031-H(TE12L,Q) Mosfets_Prod_Guide.pdf
TPC8031-H(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A SOP8 2-6J1B
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TPC8032-H(TE12LQM) Mosfets_Prod_Guide.pdf
TPC8032-H(TE12LQM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 15A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2846 pF @ 10 V
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TPC8033-H(TE12LQM) Mosfets_Prod_Guide.pdf
TPC8033-H(TE12LQM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 17A 8SOP
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