Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13582) > Сторінка 19 з 227

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
TK70D06J1(Q) TK70D06J1(Q) Toshiba Semiconductor and Storage TK70A06J1.pdf Description: MOSFET N-CH 60V 70A TO220W
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TPC6006-H(TE85L,F) TPC6006-H(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=11065&prodName=TPC6006-H Description: MOSFET N-CH 40V 3.9A VS-6
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TPC6103(TE85L,F,M) Toshiba Semiconductor and Storage docget.jsp?did=15895&prodName=TPC6103 Description: MOSFET P-CH 12V 5.5A VS6 2-3T1A
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TPC6104(TE85L,F,M) TPC6104(TE85L,F,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 20V 5.5A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 10 V
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TPC6107(TE85L,F,M) Toshiba Semiconductor and Storage docget.jsp?pid=TPC6107&lang=en&type=datasheet Description: MOSFET P-CH 20V 4.5A VS6 2-3T1A
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 Мінімальне замовлення: 3000 шт
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TPC6601(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20764&prodName=TPC6601 Description: TRANS PNP 50V 2A VS6 2-3T1A
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TPC6701(TE85L,F) Toshiba Semiconductor and Storage TPC6701.pdf Description: TRANS 2NPN 50V 1A 6VS
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TPC6901(TE85L,F,M) TPC6901(TE85L,F,M) Toshiba Semiconductor and Storage TPC6901.pdf Description: TRANS NPN/PNP 50V 6VS
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A, 700mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V
Supplier Device Package: VS-6 (2.9x2.8)
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TPC6K01(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=6074&prodName=TPC6K01 Description: DIODE ARRAY GP 400V 300MA VS6
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TPC8014(TE12L,Q,M) TPC8014(TE12L,Q,M) Toshiba Semiconductor and Storage TPC8014.pdf Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
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TPC8018-H(TE12LQM) TPC8018-H(TE12LQM) Toshiba Semiconductor and Storage TPC8018-H.pdf Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 10 V
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TPC8020-H(TE12L,Q) TPC8020-H(TE12L,Q) Toshiba Semiconductor and Storage TPC8020-H.pdf Description: MOSFET N-CH 30V 13A SOP8 2-6J1B
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 Мінімальне замовлення: 3000 шт
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TPC8021-H(TE12LQ,M TPC8021-H(TE12LQ,M Toshiba Semiconductor and Storage TPC8021-H.pdf Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
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TPC8022-H(TE12LQ,M TPC8022-H(TE12LQ,M Toshiba Semiconductor and Storage TPC8022-H.pdf Description: MOSFET N-CH 40V 7.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 3.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
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TPC8031-H(TE12LQM) TPC8031-H(TE12LQM) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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TPC8031-H(TE12L,Q) TPC8031-H(TE12L,Q) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 11A SOP8 2-6J1B
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TPC8032-H(TE12LQM) TPC8032-H(TE12LQM) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 15A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2846 pF @ 10 V
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TPC8033-H(TE12LQM) TPC8033-H(TE12LQM) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 17A 8SOP
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TPC8035-H(TE12L,QM TPC8035-H(TE12L,QM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
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TPC8037-H(TE12L,Q) TPC8037-H(TE12L,Q) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 12A SOP8 2-6J1B
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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TPC8038-H(TE12L,Q) TPC8038-H(TE12L,Q) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 12A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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TPC8110(TE12L,Q,M) TPC8110(TE12L,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 40V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V
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TPC8111(TE12L,Q,M) TPC8111(TE12L,Q,M) Toshiba Semiconductor and Storage TPC8111.pdf Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 10 V
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TPC8112(TE12L,Q) TPC8112(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?did=12266&prodName=TPC8112 Description: MOSFET P-CH 30V 13A SOP8 2-6J1B
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 Мінімальне замовлення: 3000 шт
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TPC8113(TE12L,Q) TPC8113(TE12L,Q) Toshiba Semiconductor and Storage TPC8113.pdf Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 10 V
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TPC8115(TE12L,Q,M) TPC8115(TE12L,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 20V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 10 V
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TPC8117(TE12L,Q) TPC8117(TE12L,Q) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 30V 18A SOP8 2-6J1B
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TPC8208(TE12L,Q,M) TPC8208(TE12L,Q,M) Toshiba Semiconductor and Storage TPC8208.pdf Description: MOSFET 2N-CH 20V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
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TPC8405(TE12L,Q,M) TPC8405(TE12L,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
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TPC8A02-H(TE12L,Q) TPC8A02-H(TE12L,Q) Toshiba Semiconductor and Storage TPC8A02-H.pdf Description: MOSFET N-CH 30V 16A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 10 V
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TPC8A03-H(TE12LQM) TPC8A03-H(TE12LQM) Toshiba Semiconductor and Storage docget.jsp?did=11088&prodName=TPC8A03-H Description: MOSFET N-CH 30V 17A SOP8 2-6J1B
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TPC8A04-H(TE12L,Q) TPC8A04-H(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?did=12227&prodName=TPC8A04-H Description: MOSFET N-CH 30V 18A SOP8 2-6J1B
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TPCA8003-H(TE12LQM Toshiba Semiconductor and Storage TPCA8003-H.pdf Description: MOSFET N-CH 30V 35A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 18A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 10 V
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TPCA8005-H(TE12LQM Toshiba Semiconductor and Storage TPCA8005-H.pdf Description: MOSFET N-CH 30V 27A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 10 V
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TPCA8008-H(TE12LQM Toshiba Semiconductor and Storage TPCA8008-H.pdf Description: MOSFET N-CH 250V 4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
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TPCA8010-H(TE12LQM Toshiba Semiconductor and Storage TPCA8010-H_datasheet_en_20091221.pdf?did=7271&prodName=TPCA8010-H Description: MOSFET N-CH 200V 5.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
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TPCA8011-H(TE12LQM Toshiba Semiconductor and Storage TPCA8011-H.pdf Description: MOSFET N-CH 20V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
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TPCA8012-H(TE12LQM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3713 pF @ 10 V
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TPCA8018-H(TE12LQM Toshiba Semiconductor and Storage TPCA8018-H.pdf Description: MOSFET N-CH 30V 30A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2846 pF @ 10 V
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TPCA8021-H(TE12LQM Toshiba Semiconductor and Storage TPCA8021-H.pdf Description: MOSFET N-CH 30V 27A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 10 V
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TPCA8023-H(TE12LQM Toshiba Semiconductor and Storage TPCA8023-H.pdf Description: MOSFET N-CH 30V 21A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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TPCA8031-H(TE12L,Q Toshiba Semiconductor and Storage docget.jsp?did=11786&prodName=TPCA8031-H Description: MOSFET N-CH 30V 24A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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TPCA8102(TE12L,Q,M Toshiba Semiconductor and Storage TPCA8102.pdf Description: MOSFET P-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
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TPCA8103(TE12L,Q,M Toshiba Semiconductor and Storage TPCA8103.pdf Description: MOSFET P-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 10 V
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TPCA8104(TE12L,Q,M TPCA8104(TE12L,Q,M Toshiba Semiconductor and Storage docget.jsp?did=5971&prodName=TPCA8104 Description: MOSFET P-CH 60V 40A SOP-8 ADV
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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TPCA8105(TE12L,Q,M Toshiba Semiconductor and Storage TPCA8105.pdf Description: MOSFET P-CH 12V 6A SOP-8 ADV
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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TPCA8107-H(TE12LQM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 40V 7.5A SOP-8 ADV
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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TPCA8A01-H(TE12L,Q Toshiba Semiconductor and Storage TPCA8A01-H.pdf Description: MOSFET N-CH 30V 36A SOP8 ADV
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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TPCF8102(TE85L,F,M Toshiba Semiconductor and Storage TPCF8102.pdf Description: MOSFET P-CH 20V 6A VS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-8 (2.9x1.5)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 10 V
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TPCF8304(TE85L,F,M TPCF8304(TE85L,F,M Toshiba Semiconductor and Storage TPCF8304.pdf Description: MOSFET 2P-CH 30V 3.2A VS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: VS-8 (2.9x1.5)
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TPCP8001-H(TE85LFM Toshiba Semiconductor and Storage TPCM8001-H.pdf Description: MOSFET N-CH 30V 7.2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 10V
Power Dissipation (Max): 1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
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TPCP8201(TE85L,F) Toshiba Semiconductor and Storage TPCP8201.pdf Description: MOSFET 2N-CH 30V 4.2A PS-8
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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TPCP8203(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET 2N-CH 40V 4.7A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
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TPCP8302(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?pid=TPCP8302&lang=en&type=datasheet Description: MOSFET 2P-CH 20V 5A PS-8
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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TPCP8401(TE85L,F) Toshiba Semiconductor and Storage TPCP8401.pdf Description: MOSFET N/P-CH 20V/12V PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 100mA, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: PS-8 (2.9x2.4)
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TPCP8402(TE85L,F) Toshiba Semiconductor and Storage TPCP8402.pdf Description: MOSFET N/P-CH 30V 4.2A/3.4A PS-8
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 Мінімальне замовлення: 3000 шт
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TPCP8J01(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=1332&prodName=TPCP8J01 Description: MOSFET NPN/P-CH 32V PS-8
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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1SS315TPH3F 1SS315TPH3F Toshiba Semiconductor and Storage 1SS315_datasheet_en_20140301.pdf?did=2666&prodName=1SS315 Description: RF DIODE SCHOTTKY 5V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: USC
Current - Max: 30 mA
товару немає в наявності
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1SS381,L3F 1SS381,L3F Toshiba Semiconductor and Storage Description: DIODE RF SWITCH 30V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 100 mA
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1SV262TPH3F 1SV262TPH3F Toshiba Semiconductor and Storage 1SV262.pdf Description: DIODE VARICAP 34V USC
товару немає в наявності
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TK70D06J1(Q) TK70A06J1.pdf
TK70D06J1(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 70A TO220W
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
TPC6006-H(TE85L,F) docget.jsp?did=11065&prodName=TPC6006-H
TPC6006-H(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 3.9A VS-6
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TPC6103(TE85L,F,M) docget.jsp?did=15895&prodName=TPC6103
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 5.5A VS6 2-3T1A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TPC6104(TE85L,F,M) Mosfets_Prod_Guide.pdf
TPC6104(TE85L,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 10 V
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TPC6107(TE85L,F,M) docget.jsp?pid=TPC6107&lang=en&type=datasheet
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.5A VS6 2-3T1A
товару немає в наявності
Мінімальне замовлення: 3000 шт
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TPC6601(TE85L,F) docget.jsp?did=20764&prodName=TPC6601
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A VS6 2-3T1A
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Мінімальне замовлення: 3000 шт
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TPC6701(TE85L,F) TPC6701.pdf
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 1A 6VS
товару немає в наявності
Мінімальне замовлення: 3000 шт
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TPC6901(TE85L,F,M) TPC6901.pdf
TPC6901(TE85L,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 6VS
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A, 700mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V
Supplier Device Package: VS-6 (2.9x2.8)
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TPC6K01(TE85L,F) docget.jsp?did=6074&prodName=TPC6K01
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 300MA VS6
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Мінімальне замовлення: 3000 шт
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TPC8014(TE12L,Q,M) TPC8014.pdf
TPC8014(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
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TPC8018-H(TE12LQM) TPC8018-H.pdf
TPC8018-H(TE12LQM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 10 V
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TPC8020-H(TE12L,Q) TPC8020-H.pdf
TPC8020-H(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 13A SOP8 2-6J1B
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Мінімальне замовлення: 3000 шт
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TPC8021-H(TE12LQ,M TPC8021-H.pdf
TPC8021-H(TE12LQ,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
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TPC8022-H(TE12LQ,M TPC8022-H.pdf
TPC8022-H(TE12LQ,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 7.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 3.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
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TPC8031-H(TE12LQM) Mosfets_Prod_Guide.pdf
TPC8031-H(TE12LQM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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TPC8031-H(TE12L,Q) Mosfets_Prod_Guide.pdf
TPC8031-H(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A SOP8 2-6J1B
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Мінімальне замовлення: 3000 шт
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TPC8032-H(TE12LQM) Mosfets_Prod_Guide.pdf
TPC8032-H(TE12LQM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 15A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2846 pF @ 10 V
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TPC8033-H(TE12LQM) Mosfets_Prod_Guide.pdf
TPC8033-H(TE12LQM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 17A 8SOP
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TPC8035-H(TE12L,QM Mosfets_Prod_Guide.pdf
TPC8035-H(TE12L,QM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
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TPC8037-H(TE12L,Q) Mosfets_Prod_Guide.pdf
TPC8037-H(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 12A SOP8 2-6J1B
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Мінімальне замовлення: 3000 шт
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TPC8038-H(TE12L,Q) Mosfets_Prod_Guide.pdf
TPC8038-H(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 12A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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TPC8110(TE12L,Q,M) Mosfets_Prod_Guide.pdf
TPC8110(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V
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TPC8111(TE12L,Q,M) TPC8111.pdf
TPC8111(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 10 V
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TPC8112(TE12L,Q) docget.jsp?did=12266&prodName=TPC8112
TPC8112(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 13A SOP8 2-6J1B
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Мінімальне замовлення: 3000 шт
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TPC8113(TE12L,Q) TPC8113.pdf
TPC8113(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 10 V
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TPC8115(TE12L,Q,M) Mosfets_Prod_Guide.pdf
TPC8115(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 10 V
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Мінімальне замовлення: 3000 шт
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TPC8117(TE12L,Q) Mosfets_Prod_Guide.pdf
TPC8117(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 18A SOP8 2-6J1B
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Мінімальне замовлення: 3000 шт
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TPC8208(TE12L,Q,M) TPC8208.pdf
TPC8208(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
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TPC8405(TE12L,Q,M) Mosfets_Prod_Guide.pdf
TPC8405(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 6A/4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
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TPC8A02-H(TE12L,Q) TPC8A02-H.pdf
TPC8A02-H(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 16A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 10 V
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TPC8A03-H(TE12LQM) docget.jsp?did=11088&prodName=TPC8A03-H
TPC8A03-H(TE12LQM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 17A SOP8 2-6J1B
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Мінімальне замовлення: 3000 шт
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TPC8A04-H(TE12L,Q) docget.jsp?did=12227&prodName=TPC8A04-H
TPC8A04-H(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 18A SOP8 2-6J1B
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Мінімальне замовлення: 3000 шт
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TPCA8003-H(TE12LQM TPCA8003-H.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 35A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 18A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 10 V
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TPCA8005-H(TE12LQM TPCA8005-H.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 27A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 10 V
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TPCA8008-H(TE12LQM TPCA8008-H.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
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TPCA8010-H(TE12LQM TPCA8010-H_datasheet_en_20091221.pdf?did=7271&prodName=TPCA8010-H
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 5.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
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TPCA8011-H(TE12LQM TPCA8011-H.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
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TPCA8012-H(TE12LQM Mosfets_Prod_Guide.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3713 pF @ 10 V
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TPCA8018-H(TE12LQM TPCA8018-H.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 30A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2846 pF @ 10 V
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TPCA8021-H(TE12LQM TPCA8021-H.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 27A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 10 V
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TPCA8023-H(TE12LQM TPCA8023-H.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 21A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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TPCA8031-H(TE12L,Q docget.jsp?did=11786&prodName=TPCA8031-H
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 24A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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TPCA8102(TE12L,Q,M TPCA8102.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
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TPCA8103(TE12L,Q,M TPCA8103.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 10 V
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TPCA8104(TE12L,Q,M docget.jsp?did=5971&prodName=TPCA8104
TPCA8104(TE12L,Q,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 40A SOP-8 ADV
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Мінімальне замовлення: 3000 шт
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TPCA8105(TE12L,Q,M TPCA8105.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 6A SOP-8 ADV
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Мінімальне замовлення: 3000 шт
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TPCA8107-H(TE12LQM Mosfets_Prod_Guide.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 7.5A SOP-8 ADV
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Мінімальне замовлення: 3000 шт
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TPCA8A01-H(TE12L,Q TPCA8A01-H.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 36A SOP8 ADV
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Мінімальне замовлення: 3000 шт
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TPCF8102(TE85L,F,M TPCF8102.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A VS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-8 (2.9x1.5)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 10 V
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TPCF8304(TE85L,F,M TPCF8304.pdf
TPCF8304(TE85L,F,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 3.2A VS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: VS-8 (2.9x1.5)
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TPCP8001-H(TE85LFM TPCM8001-H.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 7.2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 10V
Power Dissipation (Max): 1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
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TPCP8201(TE85L,F) TPCP8201.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4.2A PS-8
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Мінімальне замовлення: 3000 шт
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TPCP8203(TE85L,F) Mosfets_Prod_Guide.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 40V 4.7A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
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TPCP8302(TE85L,F) docget.jsp?pid=TPCP8302&lang=en&type=datasheet
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 5A PS-8
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Мінімальне замовлення: 3000 шт
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TPCP8401(TE85L,F) TPCP8401.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V/12V PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 100mA, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: PS-8 (2.9x2.4)
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TPCP8402(TE85L,F) TPCP8402.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 4.2A/3.4A PS-8
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Мінімальне замовлення: 3000 шт
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TPCP8J01(TE85L,F) docget.jsp?did=1332&prodName=TPCP8J01
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET NPN/P-CH 32V PS-8
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Мінімальне замовлення: 3000 шт
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1SS315TPH3F 1SS315_datasheet_en_20140301.pdf?did=2666&prodName=1SS315
1SS315TPH3F
Виробник: Toshiba Semiconductor and Storage
Description: RF DIODE SCHOTTKY 5V USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: USC
Current - Max: 30 mA
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Мінімальне замовлення: 3000 шт
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1SS381,L3F
1SS381,L3F
Виробник: Toshiba Semiconductor and Storage
Description: DIODE RF SWITCH 30V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 100 mA
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Мінімальне замовлення: 8000 шт
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1SV262TPH3F 1SV262.pdf
1SV262TPH3F
Виробник: Toshiba Semiconductor and Storage
Description: DIODE VARICAP 34V USC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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