| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SSM6K819R,LXHF(T | TOSHIBA |
Description: TOSHIBA - SSM6K819R,LXHF(T - Leistungs-MOSFET, n-Kanal, 100 V, 10 A, 0.0258 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: U-MOSVII-H Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0258ohm SVHC: To Be Advised |
на замовлення 2259 шт: термін постачання 21-31 дні (днів) |
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SSM6N67NU,LXGF(T | TOSHIBA |
Description: TOSHIBA - SSM6N67NU,LXGF(T - Dual-MOSFET, n-Kanal, 30 V, 4 A, 0.0391 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 4A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: UDFN Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0391ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
на замовлення 2762 шт: термін постачання 21-31 дні (днів) |
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SSM6K819R,LXHF(T | TOSHIBA |
Description: TOSHIBA - SSM6K819R,LXHF(T - Leistungs-MOSFET, n-Kanal, 100 V, 10 A, 0.0258 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: U-MOSVII-H Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0258ohm SVHC: To Be Advised |
на замовлення 2759 шт: термін постачання 21-31 дні (днів) |
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SSM6K810R,LXHF(T | TOSHIBA |
Description: TOSHIBA - SSM6K810R,LXHF(T - Leistungs-MOSFET, n-Kanal, 100 V, 3.5 A, 0.069 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 3W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: U-MOSVII-H Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.069ohm SVHC: To Be Advised |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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SSM6N7002KFU,LXH(T | TOSHIBA |
Description: TOSHIBA - SSM6N7002KFU,LXH(T - Dual-MOSFET, Zweifach n-Kanal, 60 V, 300 mA, 1.5 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 300mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Anzahl der Pins: 6Pin(s) Drain-Source-Durchgangswiderstand, n-Kanal: 1.5ohm productTraceability: No Verlustleistung, n-Kanal: 500mW Betriebstemperatur, max.: 150°C |
на замовлення 2375 шт: термін постачання 21-31 дні (днів) |
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TCR3UF18A,LM(CT | TOSHIBA |
Description: TOSHIBA - TCR3UF18A,LM(CT - LDO-Festspannungsregler, 1.5V bis 5.5Vin, 1.8V/300mAout, SOT-25, -40°C bis 85°C tariffCode: 85423990 Ausgang: Fest rohsCompliant: YES Ausgangsspannung, min.: - IC-Montage: Oberflächenmontage Ausgangsspannung, max.: - hazardous: false rohsPhthalatesCompliant: TBA isCanonical: N IC-Gehäuse / Bauform: SOT-25 Nennausgangsspannung: 1.8V usEccn: EAR99 Betriebstemperatur, min.: -40°C Eingangsspannung, max.: 5.5V euEccn: NLR Ausgangsstrom, max.: 300mA Polarität: Positiver Ausgang Eingangsspannung, min.: 1.5V Anzahl der Pins: 5Pin(s) Produktpalette: 1.8V 300mA LDO Voltage Regulators Ausgangsspannung, nom.: 1.8V productTraceability: Yes-Date/Lot Code Ausgangsstrom, max.: 300mA Dropout-Spannung, typ., bei Strom: 341mV Typische Dropout-Spannung bei Strom: 341mV Betriebstemperatur, max.: 85°C Anzahl der Ausgänge: 1Ausgänge SVHC: To Be Advised |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2SC5886A(T6L1,NQ) | TOSHIBA |
Description: TOSHIBA - 2SC5886A(T6L1,NQ) - Bipolarer Einzeltransistor (BJT), NPN, 50 V, 5 A, 20 W, New PW-Mold, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 400hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Verlustleistung: 20W Bauform - Transistor: New PW-Mold Dauerkollektorstrom: 5A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 50V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: - Betriebstemperatur, max.: 150°C SVHC: No SVHC (21-Jan-2025) |
на замовлення 2085 шт: термін постачання 21-31 дні (днів) |
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TCR3UF09A,LM(CT | TOSHIBA |
Description: TOSHIBA - TCR3UF09A,LM(CT - LDO-Spannungsregler, fest, 1.5 bis 5.5Vin, 933mV Dropout, 0.9V/0.3Aout, SOT-25-5, -40 bis 85°CtariffCode: 85423990 Ausgang: Fest rohsCompliant: YES Ausgangsspannung, min.: - IC-Montage: Oberflächenmontage Ausgangsspannung, max.: - hazardous: false rohsPhthalatesCompliant: TBA isCanonical: Y IC-Gehäuse / Bauform: SOT-25 Nennausgangsspannung: 900mV usEccn: EAR99 Betriebstemperatur, min.: -40°C Eingangsspannung, max.: 5.5V euEccn: NLR Ausgangsstrom, max.: 300mA Polarität: Positiver Ausgang Eingangsspannung, min.: 1.5V Anzahl der Pins: 5Pin(s) Produktpalette: 900mV 300mA LDO Voltage Regulators Ausgangsspannung, nom.: 900mV productTraceability: No Ausgangsstrom, max.: 300mA Dropout-Spannung, typ., bei Strom: 933mV Typische Dropout-Spannung bei Strom: 933mV Betriebstemperatur, max.: 85°C Anzahl der Ausgänge: 1Ausgänge SVHC: To Be Advised |
на замовлення 2920 шт: термін постачання 21-31 дні (днів) |
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RN1307,LXHF(T | TOSHIBA |
Description: TOSHIBA - RN1307,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm isCanonical: N usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 100mW Bauform - Transistor: SOT-323 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: To Be Advised |
на замовлення 2329 шт: термін постачання 21-31 дні (днів) |
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RN1315,LXHF(T | TOSHIBA |
Description: TOSHIBA - RN1315,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm isCanonical: N usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 100mW Bauform - Transistor: SOT-323 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: To Be Advised |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN2307,LXHF(T | TOSHIBA |
Description: TOSHIBA - RN2307,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm isCanonical: N usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 100mW Bauform - Transistor: SOT-323 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Wandlerpolarität: PNP Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: To Be Advised |
на замовлення 2534 шт: термін постачання 21-31 дні (днів) |
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RN2316,LXHF(T | TOSHIBA |
Description: TOSHIBA - RN2316,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 4.7 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 4.7kohm isCanonical: Y usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 100mW Bauform - Transistor: SOT-323 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: To Be Advised |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN2316,LXHF(T | TOSHIBA |
Description: TOSHIBA - RN2316,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 4.7 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 4.7kohm isCanonical: N usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 100mW Bauform - Transistor: SOT-323 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Wandlerpolarität: PNP Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: To Be Advised |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1311,LXHF(T | TOSHIBA |
Description: TOSHIBA - RN1311,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 120hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm isCanonical: N usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: - euEccn: NLR Verlustleistung: 100mW Bauform - Transistor: SOT-323 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Wandlerpolarität: NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: To Be Advised |
на замовлення 2534 шт: термін постачання 21-31 дні (днів) |
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RN1315,LXHF(T | TOSHIBA |
Description: TOSHIBA - RN1315,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 2.2kohm isCanonical: Y usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 100mW Bauform - Transistor: SOT-323 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: To Be Advised |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1114MFV,L3F(T | TOSHIBA |
Description: TOSHIBA - RN1114MFV,L3F(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 1 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - Basis-Eingangswiderstand R1: 1kohm isCanonical: N usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 150mW Bauform - Transistor: SOT-723 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: To Be Advised |
на замовлення 7515 шт: термін постачання 21-31 дні (днів) |
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RN2307,LXHF(T | TOSHIBA |
Description: TOSHIBA - RN2307,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm isCanonical: Y usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 100mW Bauform - Transistor: SOT-323 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: To Be Advised |
на замовлення 2534 шт: термін постачання 21-31 дні (днів) |
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RN1307,LXHF(T | TOSHIBA |
Description: TOSHIBA - RN1307,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm isCanonical: Y usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 100mW Bauform - Transistor: SOT-323 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: To Be Advised |
на замовлення 2329 шт: термін постачання 21-31 дні (днів) |
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RN2311,LXHF(T | TOSHIBA |
Description: TOSHIBA - RN2311,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 120hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm isCanonical: Y usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: - euEccn: NLR Verlustleistung: 100mW Bauform - Transistor: SOT-323 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: To Be Advised |
на замовлення 2534 шт: термін постачання 21-31 дні (днів) |
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RN2311,LXHF(T | TOSHIBA |
Description: TOSHIBA - RN2311,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 120hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm isCanonical: N usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: - euEccn: NLR Verlustleistung: 100mW Bauform - Transistor: SOT-323 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: To Be Advised |
на замовлення 2534 шт: термін постачання 21-31 дні (днів) |
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RN2411,LXHF(T | TOSHIBA |
Description: TOSHIBA - RN2411,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 120hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm isCanonical: Y usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: - euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: To Be Advised |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1114MFV,L3F(T | TOSHIBA |
Description: TOSHIBA - RN1114MFV,L3F(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 1 kohm, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - Basis-Eingangswiderstand R1: 1kohm isCanonical: Y usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 10kohm euEccn: NLR Verlustleistung: 150mW Bauform - Transistor: SOT-723 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: To Be Advised |
на замовлення 7515 шт: термін постачання 21-31 дні (днів) |
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RN2411,LXHF(T | TOSHIBA |
Description: TOSHIBA - RN2411,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 120hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm isCanonical: N usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: - Basis-Emitter-Widerstand R2: - euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-346 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: To Be Advised |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1311,LXHF(T | TOSHIBA |
Description: TOSHIBA - RN1311,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 10 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 120hFE hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 10kohm isCanonical: Y usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: - euEccn: NLR Verlustleistung: 100mW Bauform - Transistor: SOT-323 Dauerkollektorstrom: 100mA Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: To Be Advised |
на замовлення 2534 шт: термін постачання 21-31 дні (днів) |
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TLP4590A(D4TP1,F(O | TOSHIBA |
Description: TOSHIBA - TLP4590A(D4TP1,F(O - MOSFET-Relais, SPST-NC (1 Form B), AC/DC, 60 V, 1.2 A, DIP-6, Oberflächenmontage tariffCode: 85414900 Art der Last: AC/DC rohsCompliant: YES Relaisanschlüsse: Gull-Wing hazardous: false rohsPhthalatesCompliant: TBA isCanonical: Y usEccn: EAR99 Leckstrom im ausgeschalteten Zustand, max.: 10µA Isolationsspannung: 5kVrms euEccn: NLR Lastspannung, max.: 60V Relaismontage: Oberflächenmontage Kontaktform: SPST-NC (1 Form B) Laststrom: 1.2A Produktpalette: - productTraceability: Yes-Date/Lot Code I/O-Kapazität: 0.9pF Bauform MOSFET-Relais: DIP-6 Durchlasswiderstand, max.: 0.6ohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 997 шт: термін постачання 21-31 дні (днів) |
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TLP4590A(D4TP1,F(O | TOSHIBA |
Description: TOSHIBA - TLP4590A(D4TP1,F(O - MOSFET-Relais, SPST-NC (1 Form B), AC/DC, 60 V, 1.2 A, DIP-6, Oberflächenmontage tariffCode: 85414900 Art der Last: AC/DC rohsCompliant: YES Relaisanschlüsse: Gull-Wing hazardous: false rohsPhthalatesCompliant: TBA isCanonical: N usEccn: EAR99 Leckstrom im ausgeschalteten Zustand, max.: 10µA Isolationsspannung: 5kVrms euEccn: NLR Lastspannung, max.: 60V Relaismontage: Oberflächenmontage Kontaktform: SPST-NC (1 Form B) Laststrom: 1.2A productTraceability: No I/O-Kapazität: 0.9pF Bauform MOSFET-Relais: DIP-6 Durchlasswiderstand, max.: 0.6ohm |
на замовлення 997 шт: термін постачання 21-31 дні (днів) |
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TLP4176G(TP,M,F) | TOSHIBA |
Description: TOSHIBA - TLP4176G(TP,M,F) - MOSFET-Relais, SPST-NC (1 Form B), AC/DC, 350 V, 120 mA, SOP-4, Oberflächenmontage tariffCode: 85414900 Art der Last: AC/DC rohsCompliant: YES Relaisanschlüsse: Gull-Wing hazardous: false rohsPhthalatesCompliant: TBA isCanonical: N usEccn: EAR99 Leckstrom im ausgeschalteten Zustand, max.: 1µA Isolationsspannung: 1.5kVrms euEccn: NLR Lastspannung, max.: 350V Relaismontage: Oberflächenmontage Kontaktform: SPST-NC (1 Form B) Laststrom: 120mA productTraceability: No I/O-Kapazität: 0.8pF Bauform MOSFET-Relais: SOP-4 Durchlasswiderstand, max.: 25ohm |
на замовлення 1431 шт: термін постачання 21-31 дні (днів) |
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TLP4176G(TP,M,F) | TOSHIBA |
Description: TOSHIBA - TLP4176G(TP,M,F) - MOSFET-Relais, SPST-NC (1 Form B), AC/DC, 350 V, 120 mA, SOP-4, Oberflächenmontage tariffCode: 85414900 Art der Last: AC/DC rohsCompliant: YES Relaisanschlüsse: Gull-Wing hazardous: false rohsPhthalatesCompliant: TBA isCanonical: Y usEccn: EAR99 Leckstrom im ausgeschalteten Zustand, max.: 1µA Isolationsspannung: 1.5kVrms euEccn: NLR Lastspannung, max.: 350V Relaismontage: Oberflächenmontage Kontaktform: SPST-NC (1 Form B) Laststrom: 120mA Produktpalette: - productTraceability: Yes-Date/Lot Code I/O-Kapazität: 0.8pF Bauform MOSFET-Relais: SOP-4 Durchlasswiderstand, max.: 25ohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 1431 шт: термін постачання 21-31 дні (днів) |
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SSM6L807R,LF(T | TOSHIBA |
Description: TOSHIBA - SSM6L807R,LF(T - Dual-MOSFET, n- und p-Kanal, 30 V, 20 V, 4 A, 4 A, 0.0391 ohmtariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 4A Drain-Source-Durchgangswiderstand, p-Kanal: 0.045ohm Verlustleistung, p-Kanal: 1.8W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: TSOP-F Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0391ohm productTraceability: No Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 1.8W Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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SSM6L820R,LF(T | TOSHIBA |
Description: TOSHIBA - SSM6L820R,LF(T - Dual-MOSFET, n- und p-Kanal, 30 V, 20 V, 4 A, 4 A, 0.0391 ohmtariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 4A hazardous: false rohsPhthalatesCompliant: TBA isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 4A Drain-Source-Durchgangswiderstand, p-Kanal: 0.045ohm Verlustleistung, p-Kanal: 1.4W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Anzahl der Pins: 6Pin(s) Drain-Source-Durchgangswiderstand, n-Kanal: 0.0391ohm productTraceability: No Verlustleistung, n-Kanal: 1.4W Betriebstemperatur, max.: 150°C |
на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
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TK20N60W,S1VF(S | TOSHIBA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 165W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 55nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74HC573D(BJ) | TOSHIBA |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; 2÷6VDC; SMD; SO20; HC; HC; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: SO20 Family: HC Manufacturer series: HC Kind of output: 3-state Kind of package: reel; tape |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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TLP293-4(E(T | TOSHIBA |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 4 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 50-600%@0.5mA Collector-emitter voltage: 80V Case: SO16 |
на замовлення 751 шт: термін постачання 21-30 дні (днів) |
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TLP291-4(GB.E(T | TOSHIBA |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 2.5kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 4 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 100-400%@5mA Collector-emitter voltage: 80V Case: SOP16 Turn-on time: 3µs Turn-off time: 3µs |
на замовлення 1436 шт: термін постачання 21-30 дні (днів) |
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74HC74D(BJ) | TOSHIBA |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; HC; SMD; SO14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Kind of package: reel; tape Trigger: rising-edge Manufacturer series: HC |
на замовлення 3016 шт: термін постачання 21-30 дні (днів) |
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1SS361(TE85L,F) | TOSHIBA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 100mA; 4ns; SOT416; Ufmax: 1.2V; Ifsm: 2A Type of diode: switching Case: SOT416 Mounting: SMD Max. off-state voltage: 85V Load current: 0.1A Semiconductor structure: common cathode; double Max. forward voltage: 1.2V Max. forward impulse current: 2A Kind of package: reel; tape Capacitance: 3pF Reverse recovery time: 4ns Power dissipation: 0.1W Max. load current: 0.3A Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SS362(TE85L.F) | TOSHIBA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 80mA; 4ns; SOT416; Ufmax: 0.97V; Ifsm: 1A Type of diode: switching Case: SOT416 Mounting: SMD Max. off-state voltage: 85V Load current: 80mA Semiconductor structure: double series Max. forward voltage: 0.97V Max. forward impulse current: 1A Kind of package: reel; tape Capacitance: 5pF Reverse recovery time: 4ns Power dissipation: 0.1W Max. load current: 240mA Features of semiconductor devices: ultrafast switching |
на замовлення 513 шт: термін постачання 21-30 дні (днів) |
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1SS362FV,L3F(T | TOSHIBA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 100mA; 4ns; SOT723; Ufmax: 1.2V; Ifsm: 1A Type of diode: switching Case: SOT723 Mounting: SMD Max. off-state voltage: 85V Load current: 0.1A Semiconductor structure: double series Max. forward voltage: 1.2V Max. forward impulse current: 1A Kind of package: reel; tape Capacitance: 0.9pF Reverse recovery time: 4ns Power dissipation: 0.15W Max. load current: 0.3A Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SS367,H3F(T | TOSHIBA |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; USC; SMD; 15V; 0.1A; reel,tape; 200mW Type of diode: Schottky switching Case: USC Mounting: SMD Max. off-state voltage: 15V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape Power dissipation: 0.2W Max. load current: 0.2A |
на замовлення 12990 шт: термін постачання 21-30 дні (днів) |
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74HC4053D(BJ) | TOSHIBA |
Category: Decoders, multiplexers, switchesDescription: IC: digital; analog,demultiplexer,multiplexer; Ch: 3; IN: 3; SMD Mounting: SMD Family: HC Kind of package: reel; tape Number of channels: 3 Number of inputs: 3 Manufacturer series: HC Kind of integrated circuit: analog; demultiplexer; multiplexer Case: SO16 Type of integrated circuit: digital |
на замовлення 482 шт: термін постачання 21-30 дні (днів) |
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74HC4052D(BJ) | TOSHIBA |
Category: Decoders, multiplexers, switchesDescription: IC: digital; demultiplexer,multiplexer; Ch: 2; IN: 8; C²MOS; SMD Type of integrated circuit: digital Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 2 Number of inputs: 8 Technology: C²MOS Mounting: SMD Case: SO16 Manufacturer series: HC Family: HC Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: reel; tape Terminal pitch: 1.27mm Delay time: 15ns |
на замовлення 2686 шт: термін постачання 21-30 дні (днів) |
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2SA1943-O(Q) | TOSHIBA |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 230V; 15A; 150W; TO3PL Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 230V Collector current: 15A Power dissipation: 150W Case: TO3PL Mounting: THT Kind of package: tube Frequency: 30MHz |
на замовлення 2975 шт: термін постачання 21-30 дні (днів) |
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74HC04D(BJ) | TOSHIBA |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; SMD; SO14; 2÷6VDC; -40÷125°C; reel,tape; HC Type of integrated circuit: digital Family: HC Number of channels: hex; 6 Kind of gate: NOT Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Supply voltage: 2...6V DC Case: SO14 |
на замовлення 733 шт: термін постачання 21-30 дні (днів) |
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74HC125D(BJ) | TOSHIBA |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; C²MOS; SMD; SO14; HC; 10ns Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Technology: C²MOS Case: SO14 Manufacturer series: HC Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Delay time: 10ns Terminal pitch: 1.27mm Supply voltage: 2...6V DC Number of channels: 4 Kind of output: 3-state |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TBD62003APG(Z,HZ) | TOSHIBA |
Category: Drivers - integrated circuitsDescription: IC: driver; transistor array; DIP16; 0.5A; 2÷50V; Ch: 7; Uin: 0÷25V Type of integrated circuit: driver Kind of integrated circuit: transistor array Case: DIP16 Output current: 0.5A Output voltage: 2...50V Number of channels: 7 Mounting: THT Operating temperature: -40...85°C Application: for inductive load Input voltage: 0...25V |
на замовлення 614 шт: термін постачання 21-30 дні (днів) |
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TB6560AFG(O,8) | TOSHIBA |
Category: Motor and PWM driversDescription: IC: driver; stepper motor controller; PWM; QFP64; 1.5A; 4.5÷34V Type of integrated circuit: driver Kind of integrated circuit: stepper motor controller Case: QFP64 Output current: 1.5A Output voltage: 4.5...34V Number of channels: 2 Mounting: SMD Operating temperature: -30...85°C Interface: PWM Input voltage: 0...5.5V |
на замовлення 1224 шт: термін постачання 21-30 дні (днів) |
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74HC14D(BJ) | TOSHIBA |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; C²MOS; SMD; SO14; 2÷6VDC; -40÷125°C; 11ns; HC Type of integrated circuit: digital Case: SO14 Family: HC Number of channels: hex; 6 Kind of gate: NOT Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...125°C Delay time: 11ns Terminal pitch: 1.27mm Supply voltage: 2...6V DC Technology: C²MOS |
на замовлення 613 шт: термін постачання 21-30 дні (днів) |
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74HC595D(BJ) | TOSHIBA |
Category: Counters/dividersDescription: IC: digital; shift register,latch; C²MOS; HC; SMD; SO16; HC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: latch; shift register Technology: C²MOS Mounting: SMD Case: SO16 Family: HC Operating temperature: -40...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Kind of output: 3-state Delay time: 12ns Terminal pitch: 1.27mm Manufacturer series: HC |
на замовлення 4849 шт: термін постачання 21-30 дні (днів) |
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74HC00D(BJ) | TOSHIBA |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; C²MOS; SMD; SO14; 2÷6VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...125°C Family: HC Kind of package: reel; tape Technology: C²MOS Delay time: 6ns Terminal pitch: 1.27mm |
на замовлення 1821 шт: термін постачання 21-30 дні (днів) |
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2SC5200-O(Q) | TOSHIBA |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 230V; 15A; 150W; TO3PL Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 230V Collector current: 15A Power dissipation: 150W Case: TO3PL Mounting: THT Kind of package: tube Frequency: 30MHz |
на замовлення 788 шт: термін постачання 21-30 дні (днів) |
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74HC4050D(BJ) | TOSHIBA |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; HC; 2÷6VDC Type of integrated circuit: digital Number of channels: 6 Mounting: SMD Case: SO16 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of integrated circuit: buffer; non-inverting Technology: CMOS Manufacturer series: HC Kind of package: reel; tape |
на замовлення 3038 шт: термін постачання 21-30 дні (днів) |
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BAV70,LM(T | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Capacitance: 0.9pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Power dissipation: 0.15W Kind of package: reel; tape Max. load current: 0.5A Features of semiconductor devices: ultrafast switching |
на замовлення 2822 шт: термін постачання 21-30 дні (днів) |
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74HC245D(BJ) | TOSHIBA |
Category: Buffers, transceivers, driversDescription: IC: digital; bus transceiver; Ch: 8; C²MOS; SMD; SO20; HC; -40÷125°C Supply voltage: 2...6V DC Operating temperature: -40...125°C Manufacturer series: HC Mounting: SMD Case: SO20 Delay time: 10ns Terminal pitch: 1.27mm Number of channels: 8 Kind of package: reel; tape Kind of integrated circuit: bus transceiver Technology: C²MOS Type of integrated circuit: digital |
на замовлення 1182 шт: термін постачання 21-30 дні (днів) |
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TLP185(GB-TPL,SE(T | TOSHIBA |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 100-600%@5mA Collector-emitter voltage: 80V Case: SO6 |
на замовлення 6774 шт: термін постачання 21-30 дні (днів) |
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TLP185(GR-TPL,SE(T | TOSHIBA |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 100-300%@5mA Collector-emitter voltage: 80V Case: SO6 |
на замовлення 12032 шт: термін постачання 21-30 дні (днів) |
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74HC08D(BJ) | TOSHIBA |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; C²MOS; SMD; SO14; 2÷6VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...125°C Family: HC Technology: C²MOS Delay time: 6ns Kind of package: reel; tape Terminal pitch: 1.27mm |
на замовлення 293 шт: термін постачання 21-30 дні (днів) |
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| TLP350H(TP1.F) | TOSHIBA |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: totem pole; Uinsul: 3.75kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: totem pole Insulation voltage: 3.75kV Collector-emitter voltage: 30V Case: DIP8 Turn-on time: 15ns Turn-off time: 8ns Slew rate: 25kV/μs Collector current: 3mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLP350H(F) | TOSHIBA |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: totem pole; Uinsul: 3.75kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: totem pole Insulation voltage: 3.75kV Collector-emitter voltage: 30V Case: DIP8 Turn-on time: 15ns Turn-off time: 8ns Slew rate: 25kV/μs Collector current: 3mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP291(SE(T | TOSHIBA |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 50-600%@5mA Collector-emitter voltage: 80V Case: SO4 Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP291(BL.SE(T | TOSHIBA |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 200-600%@5mA Collector-emitter voltage: 80V Case: SO4 Turn-on time: 7µs Turn-off time: 7µs Max. off-state voltage: 5V |
на замовлення 2674 шт: термін постачання 21-30 дні (днів) |
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| SSM6K819R,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - SSM6K819R,LXHF(T - Leistungs-MOSFET, n-Kanal, 100 V, 10 A, 0.0258 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.5W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: U-MOSVII-H Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0258ohm
SVHC: To Be Advised
Description: TOSHIBA - SSM6K819R,LXHF(T - Leistungs-MOSFET, n-Kanal, 100 V, 10 A, 0.0258 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.5W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: U-MOSVII-H Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0258ohm
SVHC: To Be Advised
на замовлення 2259 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 50.58 грн |
| 500+ | 37.01 грн |
| 1000+ | 31.08 грн |
| SSM6N67NU,LXGF(T |
Виробник: TOSHIBA
Description: TOSHIBA - SSM6N67NU,LXGF(T - Dual-MOSFET, n-Kanal, 30 V, 4 A, 0.0391 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 4A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: UDFN
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0391ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
Description: TOSHIBA - SSM6N67NU,LXGF(T - Dual-MOSFET, n-Kanal, 30 V, 4 A, 0.0391 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 4A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: UDFN
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0391ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
на замовлення 2762 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 26.81 грн |
| 500+ | 19.17 грн |
| 1500+ | 15.91 грн |
| SSM6K819R,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - SSM6K819R,LXHF(T - Leistungs-MOSFET, n-Kanal, 100 V, 10 A, 0.0258 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.5W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: U-MOSVII-H Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0258ohm
SVHC: To Be Advised
Description: TOSHIBA - SSM6K819R,LXHF(T - Leistungs-MOSFET, n-Kanal, 100 V, 10 A, 0.0258 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.5W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: U-MOSVII-H Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0258ohm
SVHC: To Be Advised
на замовлення 2759 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 120.05 грн |
| 11+ | 75.71 грн |
| 100+ | 50.58 грн |
| 500+ | 37.01 грн |
| 1000+ | 31.08 грн |
| SSM6K810R,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - SSM6K810R,LXHF(T - Leistungs-MOSFET, n-Kanal, 100 V, 3.5 A, 0.069 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 3W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: U-MOSVII-H Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.069ohm
SVHC: To Be Advised
Description: TOSHIBA - SSM6K810R,LXHF(T - Leistungs-MOSFET, n-Kanal, 100 V, 3.5 A, 0.069 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 3W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: U-MOSVII-H Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.069ohm
SVHC: To Be Advised
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 33.93 грн |
| 500+ | 24.38 грн |
| 1000+ | 20.37 грн |
| SSM6N7002KFU,LXH(T |
Виробник: TOSHIBA
Description: TOSHIBA - SSM6N7002KFU,LXH(T - Dual-MOSFET, Zweifach n-Kanal, 60 V, 300 mA, 1.5 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 300mA
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Anzahl der Pins: 6Pin(s)
Drain-Source-Durchgangswiderstand, n-Kanal: 1.5ohm
productTraceability: No
Verlustleistung, n-Kanal: 500mW
Betriebstemperatur, max.: 150°C
Description: TOSHIBA - SSM6N7002KFU,LXH(T - Dual-MOSFET, Zweifach n-Kanal, 60 V, 300 mA, 1.5 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 300mA
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Anzahl der Pins: 6Pin(s)
Drain-Source-Durchgangswiderstand, n-Kanal: 1.5ohm
productTraceability: No
Verlustleistung, n-Kanal: 500mW
Betriebstemperatur, max.: 150°C
на замовлення 2375 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 17.05 грн |
| 102+ | 7.88 грн |
| 500+ | 7.04 грн |
| 1000+ | 6.17 грн |
| TCR3UF18A,LM(CT |
Виробник: TOSHIBA
Description: TOSHIBA - TCR3UF18A,LM(CT - LDO-Festspannungsregler, 1.5V bis 5.5Vin, 1.8V/300mAout, SOT-25, -40°C bis 85°C
tariffCode: 85423990
Ausgang: Fest
rohsCompliant: YES
Ausgangsspannung, min.: -
IC-Montage: Oberflächenmontage
Ausgangsspannung, max.: -
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: N
IC-Gehäuse / Bauform: SOT-25
Nennausgangsspannung: 1.8V
usEccn: EAR99
Betriebstemperatur, min.: -40°C
Eingangsspannung, max.: 5.5V
euEccn: NLR
Ausgangsstrom, max.: 300mA
Polarität: Positiver Ausgang
Eingangsspannung, min.: 1.5V
Anzahl der Pins: 5Pin(s)
Produktpalette: 1.8V 300mA LDO Voltage Regulators
Ausgangsspannung, nom.: 1.8V
productTraceability: Yes-Date/Lot Code
Ausgangsstrom, max.: 300mA
Dropout-Spannung, typ., bei Strom: 341mV
Typische Dropout-Spannung bei Strom: 341mV
Betriebstemperatur, max.: 85°C
Anzahl der Ausgänge: 1Ausgänge
SVHC: To Be Advised
Description: TOSHIBA - TCR3UF18A,LM(CT - LDO-Festspannungsregler, 1.5V bis 5.5Vin, 1.8V/300mAout, SOT-25, -40°C bis 85°C
tariffCode: 85423990
Ausgang: Fest
rohsCompliant: YES
Ausgangsspannung, min.: -
IC-Montage: Oberflächenmontage
Ausgangsspannung, max.: -
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: N
IC-Gehäuse / Bauform: SOT-25
Nennausgangsspannung: 1.8V
usEccn: EAR99
Betriebstemperatur, min.: -40°C
Eingangsspannung, max.: 5.5V
euEccn: NLR
Ausgangsstrom, max.: 300mA
Polarität: Positiver Ausgang
Eingangsspannung, min.: 1.5V
Anzahl der Pins: 5Pin(s)
Produktpalette: 1.8V 300mA LDO Voltage Regulators
Ausgangsspannung, nom.: 1.8V
productTraceability: Yes-Date/Lot Code
Ausgangsstrom, max.: 300mA
Dropout-Spannung, typ., bei Strom: 341mV
Typische Dropout-Spannung bei Strom: 341mV
Betriebstemperatur, max.: 85°C
Anzahl der Ausgänge: 1Ausgänge
SVHC: To Be Advised
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.21 грн |
| 2SC5886A(T6L1,NQ) |
![]() |
Виробник: TOSHIBA
Description: TOSHIBA - 2SC5886A(T6L1,NQ) - Bipolarer Einzeltransistor (BJT), NPN, 50 V, 5 A, 20 W, New PW-Mold, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 400hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Verlustleistung: 20W
Bauform - Transistor: New PW-Mold
Dauerkollektorstrom: 5A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Übergangsfrequenz: -
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (21-Jan-2025)
Description: TOSHIBA - 2SC5886A(T6L1,NQ) - Bipolarer Einzeltransistor (BJT), NPN, 50 V, 5 A, 20 W, New PW-Mold, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 400hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Verlustleistung: 20W
Bauform - Transistor: New PW-Mold
Dauerkollektorstrom: 5A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Übergangsfrequenz: -
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (21-Jan-2025)
на замовлення 2085 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 83.23 грн |
| 16+ | 52.18 грн |
| 100+ | 34.25 грн |
| 500+ | 24.60 грн |
| 1000+ | 20.51 грн |
| TCR3UF09A,LM(CT |
![]() |
Виробник: TOSHIBA
Description: TOSHIBA - TCR3UF09A,LM(CT - LDO-Spannungsregler, fest, 1.5 bis 5.5Vin, 933mV Dropout, 0.9V/0.3Aout, SOT-25-5, -40 bis 85°C
tariffCode: 85423990
Ausgang: Fest
rohsCompliant: YES
Ausgangsspannung, min.: -
IC-Montage: Oberflächenmontage
Ausgangsspannung, max.: -
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: Y
IC-Gehäuse / Bauform: SOT-25
Nennausgangsspannung: 900mV
usEccn: EAR99
Betriebstemperatur, min.: -40°C
Eingangsspannung, max.: 5.5V
euEccn: NLR
Ausgangsstrom, max.: 300mA
Polarität: Positiver Ausgang
Eingangsspannung, min.: 1.5V
Anzahl der Pins: 5Pin(s)
Produktpalette: 900mV 300mA LDO Voltage Regulators
Ausgangsspannung, nom.: 900mV
productTraceability: No
Ausgangsstrom, max.: 300mA
Dropout-Spannung, typ., bei Strom: 933mV
Typische Dropout-Spannung bei Strom: 933mV
Betriebstemperatur, max.: 85°C
Anzahl der Ausgänge: 1Ausgänge
SVHC: To Be Advised
Description: TOSHIBA - TCR3UF09A,LM(CT - LDO-Spannungsregler, fest, 1.5 bis 5.5Vin, 933mV Dropout, 0.9V/0.3Aout, SOT-25-5, -40 bis 85°C
tariffCode: 85423990
Ausgang: Fest
rohsCompliant: YES
Ausgangsspannung, min.: -
IC-Montage: Oberflächenmontage
Ausgangsspannung, max.: -
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: Y
IC-Gehäuse / Bauform: SOT-25
Nennausgangsspannung: 900mV
usEccn: EAR99
Betriebstemperatur, min.: -40°C
Eingangsspannung, max.: 5.5V
euEccn: NLR
Ausgangsstrom, max.: 300mA
Polarität: Positiver Ausgang
Eingangsspannung, min.: 1.5V
Anzahl der Pins: 5Pin(s)
Produktpalette: 900mV 300mA LDO Voltage Regulators
Ausgangsspannung, nom.: 900mV
productTraceability: No
Ausgangsstrom, max.: 300mA
Dropout-Spannung, typ., bei Strom: 933mV
Typische Dropout-Spannung bei Strom: 933mV
Betriebstemperatur, max.: 85°C
Anzahl der Ausgänge: 1Ausgänge
SVHC: To Be Advised
на замовлення 2920 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 8.96 грн |
| 500+ | 6.75 грн |
| 1500+ | 5.08 грн |
| RN1307,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN1307,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 10 kohm, 47 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 80hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: 47kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
Description: TOSHIBA - RN1307,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 10 kohm, 47 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 80hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: 47kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
на замовлення 2329 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 8.72 грн |
| 500+ | 5.56 грн |
| 1000+ | 4.48 грн |
| RN1315,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN1315,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 50hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 2.2kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: 10kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
Description: TOSHIBA - RN1315,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 50hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 2.2kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: 10kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 11.84 грн |
| 108+ | 7.42 грн |
| 500+ | 5.14 грн |
| 1000+ | 4.14 грн |
| RN2307,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN2307,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm, 47 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 80hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: 47kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
Description: TOSHIBA - RN2307,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm, 47 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 80hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: 47kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
на замовлення 2534 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 12.81 грн |
| 500+ | 7.31 грн |
| 1000+ | 5.19 грн |
| RN2316,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN2316,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 4.7 kohm, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 50hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 4.7kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: 10kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
Description: TOSHIBA - RN2316,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 4.7 kohm, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 50hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 4.7kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: 10kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 20.01 грн |
| 45+ | 18.17 грн |
| 100+ | 10.88 грн |
| 500+ | 6.76 грн |
| 1000+ | 4.80 грн |
| RN2316,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN2316,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 4.7 kohm, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 50hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 4.7kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: 10kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
Description: TOSHIBA - RN2316,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 4.7 kohm, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 50hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 4.7kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: 10kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 10.88 грн |
| 500+ | 6.76 грн |
| 1000+ | 4.80 грн |
| RN1311,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN1311,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: -
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
Description: TOSHIBA - RN1311,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: -
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
на замовлення 2534 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 12.81 грн |
| 500+ | 7.31 грн |
| 1000+ | 5.19 грн |
| RN1315,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN1315,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 50hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 2.2kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: 10kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
Description: TOSHIBA - RN1315,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 50hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 2.2kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: 10kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 19.45 грн |
| 68+ | 11.84 грн |
| 108+ | 7.42 грн |
| 500+ | 5.14 грн |
| 1000+ | 4.14 грн |
| RN1114MFV,L3F(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN1114MFV,L3F(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 1 kohm, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 50hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
Basis-Eingangswiderstand R1: 1kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: 10kohm
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-723
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
Description: TOSHIBA - RN1114MFV,L3F(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 1 kohm, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 50hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
Basis-Eingangswiderstand R1: 1kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: 10kohm
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-723
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
на замовлення 7515 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 12.48 грн |
| 103+ | 7.83 грн |
| 166+ | 4.85 грн |
| 500+ | 3.02 грн |
| 1000+ | 2.18 грн |
| 5000+ | 1.69 грн |
| RN2307,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN2307,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm, 47 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 80hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: 47kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
Description: TOSHIBA - RN2307,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm, 47 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 80hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: 47kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
на замовлення 2534 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 23.53 грн |
| 38+ | 21.37 грн |
| 100+ | 12.81 грн |
| 500+ | 7.31 грн |
| 1000+ | 5.19 грн |
| RN1307,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN1307,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 10 kohm, 47 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 80hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: 47kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
Description: TOSHIBA - RN1307,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 10 kohm, 47 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 80hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: 47kohm
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
на замовлення 2329 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 22.89 грн |
| 58+ | 13.93 грн |
| 100+ | 8.72 грн |
| 500+ | 5.56 грн |
| 1000+ | 4.48 грн |
| RN2311,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN2311,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: -
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
Description: TOSHIBA - RN2311,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: -
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
на замовлення 2534 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 22.89 грн |
| 58+ | 13.93 грн |
| 100+ | 8.72 грн |
| 500+ | 5.56 грн |
| 1000+ | 4.48 грн |
| RN2311,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN2311,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: -
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
Description: TOSHIBA - RN2311,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: -
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
на замовлення 2534 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 8.72 грн |
| 500+ | 5.56 грн |
| 1000+ | 4.48 грн |
| RN2411,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN2411,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: -
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
Description: TOSHIBA - RN2411,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: -
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 43+ | 18.81 грн |
| 70+ | 11.44 грн |
| 111+ | 7.21 грн |
| 500+ | 5.03 грн |
| 1000+ | 4.14 грн |
| RN1114MFV,L3F(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN1114MFV,L3F(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 1 kohm, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 50hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
Basis-Eingangswiderstand R1: 1kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: 10kohm
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-723
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
Description: TOSHIBA - RN1114MFV,L3F(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 1 kohm, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 50hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
Basis-Eingangswiderstand R1: 1kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: 10kohm
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: SOT-723
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
на замовлення 7515 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 65+ | 12.48 грн |
| 103+ | 7.83 грн |
| 166+ | 4.85 грн |
| 500+ | 3.02 грн |
| 1000+ | 2.18 грн |
| 5000+ | 1.69 грн |
| RN2411,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN2411,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: -
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
Description: TOSHIBA - RN2411,LXHF(T - Bipolarer Transistor, pre-biased/digital, PNP, 50 V, 100 mA, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: N
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: -
Basis-Emitter-Widerstand R2: -
euEccn: NLR
Verlustleistung: 200mW
Bauform - Transistor: SOT-346
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: 50V
SVHC: To Be Advised
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 11.44 грн |
| 111+ | 7.21 грн |
| 500+ | 5.03 грн |
| 1000+ | 4.14 грн |
| RN1311,LXHF(T |
Виробник: TOSHIBA
Description: TOSHIBA - RN1311,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: -
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
Description: TOSHIBA - RN1311,LXHF(T - Bipolarer Transistor, pre-biased/digital, NPN, 50 V, 100 mA, 10 kohm
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 120hFE
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
Basis-Eingangswiderstand R1: 10kohm
isCanonical: Y
usEccn: EAR99
Kollektor-Emitter-Spannung, NPN, max.: 50V
Basis-Emitter-Widerstand R2: -
euEccn: NLR
Verlustleistung: 100mW
Bauform - Transistor: SOT-323
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Betriebstemperatur, max.: 150°C
Kollektor-Emitter-Spannung, PNP, max.: -
SVHC: To Be Advised
на замовлення 2534 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 23.53 грн |
| 38+ | 21.37 грн |
| 100+ | 12.81 грн |
| 500+ | 7.31 грн |
| 1000+ | 5.19 грн |
| TLP4590A(D4TP1,F(O |
Виробник: TOSHIBA
Description: TOSHIBA - TLP4590A(D4TP1,F(O - MOSFET-Relais, SPST-NC (1 Form B), AC/DC, 60 V, 1.2 A, DIP-6, Oberflächenmontage
tariffCode: 85414900
Art der Last: AC/DC
rohsCompliant: YES
Relaisanschlüsse: Gull-Wing
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: Y
usEccn: EAR99
Leckstrom im ausgeschalteten Zustand, max.: 10µA
Isolationsspannung: 5kVrms
euEccn: NLR
Lastspannung, max.: 60V
Relaismontage: Oberflächenmontage
Kontaktform: SPST-NC (1 Form B)
Laststrom: 1.2A
Produktpalette: -
productTraceability: Yes-Date/Lot Code
I/O-Kapazität: 0.9pF
Bauform MOSFET-Relais: DIP-6
Durchlasswiderstand, max.: 0.6ohm
SVHC: No SVHC (25-Jun-2025)
Description: TOSHIBA - TLP4590A(D4TP1,F(O - MOSFET-Relais, SPST-NC (1 Form B), AC/DC, 60 V, 1.2 A, DIP-6, Oberflächenmontage
tariffCode: 85414900
Art der Last: AC/DC
rohsCompliant: YES
Relaisanschlüsse: Gull-Wing
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: Y
usEccn: EAR99
Leckstrom im ausgeschalteten Zustand, max.: 10µA
Isolationsspannung: 5kVrms
euEccn: NLR
Lastspannung, max.: 60V
Relaismontage: Oberflächenmontage
Kontaktform: SPST-NC (1 Form B)
Laststrom: 1.2A
Produktpalette: -
productTraceability: Yes-Date/Lot Code
I/O-Kapazität: 0.9pF
Bauform MOSFET-Relais: DIP-6
Durchlasswiderstand, max.: 0.6ohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 227.29 грн |
| 10+ | 214.49 грн |
| 25+ | 197.68 грн |
| 50+ | 175.38 грн |
| 100+ | 155.72 грн |
| 500+ | 150.23 грн |
| TLP4590A(D4TP1,F(O |
Виробник: TOSHIBA
Description: TOSHIBA - TLP4590A(D4TP1,F(O - MOSFET-Relais, SPST-NC (1 Form B), AC/DC, 60 V, 1.2 A, DIP-6, Oberflächenmontage
tariffCode: 85414900
Art der Last: AC/DC
rohsCompliant: YES
Relaisanschlüsse: Gull-Wing
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: N
usEccn: EAR99
Leckstrom im ausgeschalteten Zustand, max.: 10µA
Isolationsspannung: 5kVrms
euEccn: NLR
Lastspannung, max.: 60V
Relaismontage: Oberflächenmontage
Kontaktform: SPST-NC (1 Form B)
Laststrom: 1.2A
productTraceability: No
I/O-Kapazität: 0.9pF
Bauform MOSFET-Relais: DIP-6
Durchlasswiderstand, max.: 0.6ohm
Description: TOSHIBA - TLP4590A(D4TP1,F(O - MOSFET-Relais, SPST-NC (1 Form B), AC/DC, 60 V, 1.2 A, DIP-6, Oberflächenmontage
tariffCode: 85414900
Art der Last: AC/DC
rohsCompliant: YES
Relaisanschlüsse: Gull-Wing
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: N
usEccn: EAR99
Leckstrom im ausgeschalteten Zustand, max.: 10µA
Isolationsspannung: 5kVrms
euEccn: NLR
Lastspannung, max.: 60V
Relaismontage: Oberflächenmontage
Kontaktform: SPST-NC (1 Form B)
Laststrom: 1.2A
productTraceability: No
I/O-Kapazität: 0.9pF
Bauform MOSFET-Relais: DIP-6
Durchlasswiderstand, max.: 0.6ohm
на замовлення 997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 155.72 грн |
| 500+ | 150.23 грн |
| TLP4176G(TP,M,F) |
Виробник: TOSHIBA
Description: TOSHIBA - TLP4176G(TP,M,F) - MOSFET-Relais, SPST-NC (1 Form B), AC/DC, 350 V, 120 mA, SOP-4, Oberflächenmontage
tariffCode: 85414900
Art der Last: AC/DC
rohsCompliant: YES
Relaisanschlüsse: Gull-Wing
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: N
usEccn: EAR99
Leckstrom im ausgeschalteten Zustand, max.: 1µA
Isolationsspannung: 1.5kVrms
euEccn: NLR
Lastspannung, max.: 350V
Relaismontage: Oberflächenmontage
Kontaktform: SPST-NC (1 Form B)
Laststrom: 120mA
productTraceability: No
I/O-Kapazität: 0.8pF
Bauform MOSFET-Relais: SOP-4
Durchlasswiderstand, max.: 25ohm
Description: TOSHIBA - TLP4176G(TP,M,F) - MOSFET-Relais, SPST-NC (1 Form B), AC/DC, 350 V, 120 mA, SOP-4, Oberflächenmontage
tariffCode: 85414900
Art der Last: AC/DC
rohsCompliant: YES
Relaisanschlüsse: Gull-Wing
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: N
usEccn: EAR99
Leckstrom im ausgeschalteten Zustand, max.: 1µA
Isolationsspannung: 1.5kVrms
euEccn: NLR
Lastspannung, max.: 350V
Relaismontage: Oberflächenmontage
Kontaktform: SPST-NC (1 Form B)
Laststrom: 120mA
productTraceability: No
I/O-Kapazität: 0.8pF
Bauform MOSFET-Relais: SOP-4
Durchlasswiderstand, max.: 25ohm
на замовлення 1431 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 72.71 грн |
| 500+ | 71.34 грн |
| TLP4176G(TP,M,F) |
Виробник: TOSHIBA
Description: TOSHIBA - TLP4176G(TP,M,F) - MOSFET-Relais, SPST-NC (1 Form B), AC/DC, 350 V, 120 mA, SOP-4, Oberflächenmontage
tariffCode: 85414900
Art der Last: AC/DC
rohsCompliant: YES
Relaisanschlüsse: Gull-Wing
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: Y
usEccn: EAR99
Leckstrom im ausgeschalteten Zustand, max.: 1µA
Isolationsspannung: 1.5kVrms
euEccn: NLR
Lastspannung, max.: 350V
Relaismontage: Oberflächenmontage
Kontaktform: SPST-NC (1 Form B)
Laststrom: 120mA
Produktpalette: -
productTraceability: Yes-Date/Lot Code
I/O-Kapazität: 0.8pF
Bauform MOSFET-Relais: SOP-4
Durchlasswiderstand, max.: 25ohm
SVHC: No SVHC (25-Jun-2025)
Description: TOSHIBA - TLP4176G(TP,M,F) - MOSFET-Relais, SPST-NC (1 Form B), AC/DC, 350 V, 120 mA, SOP-4, Oberflächenmontage
tariffCode: 85414900
Art der Last: AC/DC
rohsCompliant: YES
Relaisanschlüsse: Gull-Wing
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: Y
usEccn: EAR99
Leckstrom im ausgeschalteten Zustand, max.: 1µA
Isolationsspannung: 1.5kVrms
euEccn: NLR
Lastspannung, max.: 350V
Relaismontage: Oberflächenmontage
Kontaktform: SPST-NC (1 Form B)
Laststrom: 120mA
Produktpalette: -
productTraceability: Yes-Date/Lot Code
I/O-Kapazität: 0.8pF
Bauform MOSFET-Relais: SOP-4
Durchlasswiderstand, max.: 25ohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 1431 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 107.24 грн |
| 10+ | 95.24 грн |
| 25+ | 88.04 грн |
| 50+ | 80.26 грн |
| 100+ | 72.71 грн |
| 500+ | 71.34 грн |
| SSM6L807R,LF(T |
![]() |
Виробник: TOSHIBA
Description: TOSHIBA - SSM6L807R,LF(T - Dual-MOSFET, n- und p-Kanal, 30 V, 20 V, 4 A, 4 A, 0.0391 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 4A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.045ohm
Verlustleistung, p-Kanal: 1.8W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: TSOP-F
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0391ohm
productTraceability: No
Kanaltyp: n- und p-Kanal
Verlustleistung, n-Kanal: 1.8W
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
Description: TOSHIBA - SSM6L807R,LF(T - Dual-MOSFET, n- und p-Kanal, 30 V, 20 V, 4 A, 4 A, 0.0391 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 4A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.045ohm
Verlustleistung, p-Kanal: 1.8W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: TSOP-F
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0391ohm
productTraceability: No
Kanaltyp: n- und p-Kanal
Verlustleistung, n-Kanal: 1.8W
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 24.89 грн |
| 500+ | 18.13 грн |
| 1500+ | 14.54 грн |
| SSM6L820R,LF(T |
![]() |
Виробник: TOSHIBA
Description: TOSHIBA - SSM6L820R,LF(T - Dual-MOSFET, n- und p-Kanal, 30 V, 20 V, 4 A, 4 A, 0.0391 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 4A
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 4A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.045ohm
Verlustleistung, p-Kanal: 1.4W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Anzahl der Pins: 6Pin(s)
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0391ohm
productTraceability: No
Verlustleistung, n-Kanal: 1.4W
Betriebstemperatur, max.: 150°C
Description: TOSHIBA - SSM6L820R,LF(T - Dual-MOSFET, n- und p-Kanal, 30 V, 20 V, 4 A, 4 A, 0.0391 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 4A
hazardous: false
rohsPhthalatesCompliant: TBA
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 4A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.045ohm
Verlustleistung, p-Kanal: 1.4W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Anzahl der Pins: 6Pin(s)
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0391ohm
productTraceability: No
Verlustleistung, n-Kanal: 1.4W
Betriebstemperatur, max.: 150°C
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 18.57 грн |
| 500+ | 12.48 грн |
| 1000+ | 10.22 грн |
| TK20N60W,S1VF(S |
![]() |
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
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| 74HC573D(BJ) |
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Виробник: TOSHIBA
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷6VDC; SMD; SO20; HC; HC; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20
Family: HC
Manufacturer series: HC
Kind of output: 3-state
Kind of package: reel; tape
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷6VDC; SMD; SO20; HC; HC; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20
Family: HC
Manufacturer series: HC
Kind of output: 3-state
Kind of package: reel; tape
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.53 грн |
| 12+ | 35.75 грн |
| 25+ | 32.12 грн |
| TLP293-4(E(T |
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Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-600%@0.5mA
Collector-emitter voltage: 80V
Case: SO16
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-600%@0.5mA
Collector-emitter voltage: 80V
Case: SO16
на замовлення 751 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 84.48 грн |
| 10+ | 63.58 грн |
| 50+ | 56.98 грн |
| 100+ | 52.85 грн |
| 500+ | 50.37 грн |
| TLP291-4(GB.E(T |
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Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 2.5kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-400%@5mA
Collector-emitter voltage: 80V
Case: SOP16
Turn-on time: 3µs
Turn-off time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 2.5kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-400%@5mA
Collector-emitter voltage: 80V
Case: SOP16
Turn-on time: 3µs
Turn-off time: 3µs
на замовлення 1436 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 121.83 грн |
| 5+ | 91.66 грн |
| 10+ | 78.44 грн |
| 25+ | 62.76 грн |
| 50+ | 52.85 грн |
| 100+ | 47.89 грн |
| 74HC74D(BJ) |
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Виробник: TOSHIBA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: rising-edge
Manufacturer series: HC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: rising-edge
Manufacturer series: HC
на замовлення 3016 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 62.25 грн |
| 11+ | 39.30 грн |
| 25+ | 31.71 грн |
| 100+ | 23.12 грн |
| 250+ | 19.16 грн |
| 300+ | 18.58 грн |
| 500+ | 17.59 грн |
| 1SS361(TE85L,F) |
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Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT416; Ufmax: 1.2V; Ifsm: 2A
Type of diode: switching
Case: SOT416
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.1A
Semiconductor structure: common cathode; double
Max. forward voltage: 1.2V
Max. forward impulse current: 2A
Kind of package: reel; tape
Capacitance: 3pF
Reverse recovery time: 4ns
Power dissipation: 0.1W
Max. load current: 0.3A
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT416; Ufmax: 1.2V; Ifsm: 2A
Type of diode: switching
Case: SOT416
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.1A
Semiconductor structure: common cathode; double
Max. forward voltage: 1.2V
Max. forward impulse current: 2A
Kind of package: reel; tape
Capacitance: 3pF
Reverse recovery time: 4ns
Power dissipation: 0.1W
Max. load current: 0.3A
Features of semiconductor devices: ultrafast switching
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| 1SS362(TE85L.F) |
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Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 80mA; 4ns; SOT416; Ufmax: 0.97V; Ifsm: 1A
Type of diode: switching
Case: SOT416
Mounting: SMD
Max. off-state voltage: 85V
Load current: 80mA
Semiconductor structure: double series
Max. forward voltage: 0.97V
Max. forward impulse current: 1A
Kind of package: reel; tape
Capacitance: 5pF
Reverse recovery time: 4ns
Power dissipation: 0.1W
Max. load current: 240mA
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 80mA; 4ns; SOT416; Ufmax: 0.97V; Ifsm: 1A
Type of diode: switching
Case: SOT416
Mounting: SMD
Max. off-state voltage: 85V
Load current: 80mA
Semiconductor structure: double series
Max. forward voltage: 0.97V
Max. forward impulse current: 1A
Kind of package: reel; tape
Capacitance: 5pF
Reverse recovery time: 4ns
Power dissipation: 0.1W
Max. load current: 240mA
Features of semiconductor devices: ultrafast switching
на замовлення 513 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.56 грн |
| 49+ | 8.59 грн |
| 57+ | 7.35 грн |
| 100+ | 4.43 грн |
| 200+ | 3.83 грн |
| 500+ | 3.20 грн |
| 1SS362FV,L3F(T |
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Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT723; Ufmax: 1.2V; Ifsm: 1A
Type of diode: switching
Case: SOT723
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.1A
Semiconductor structure: double series
Max. forward voltage: 1.2V
Max. forward impulse current: 1A
Kind of package: reel; tape
Capacitance: 0.9pF
Reverse recovery time: 4ns
Power dissipation: 0.15W
Max. load current: 0.3A
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT723; Ufmax: 1.2V; Ifsm: 1A
Type of diode: switching
Case: SOT723
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.1A
Semiconductor structure: double series
Max. forward voltage: 1.2V
Max. forward impulse current: 1A
Kind of package: reel; tape
Capacitance: 0.9pF
Reverse recovery time: 4ns
Power dissipation: 0.15W
Max. load current: 0.3A
Features of semiconductor devices: ultrafast switching
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од. на суму грн.
| 1SS367,H3F(T |
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Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; USC; SMD; 15V; 0.1A; reel,tape; 200mW
Type of diode: Schottky switching
Case: USC
Mounting: SMD
Max. off-state voltage: 15V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Power dissipation: 0.2W
Max. load current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; USC; SMD; 15V; 0.1A; reel,tape; 200mW
Type of diode: Schottky switching
Case: USC
Mounting: SMD
Max. off-state voltage: 15V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Power dissipation: 0.2W
Max. load current: 0.2A
на замовлення 12990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 105+ | 4.31 грн |
| 145+ | 2.92 грн |
| 500+ | 2.58 грн |
| 3000+ | 2.32 грн |
| 12000+ | 2.27 грн |
| 74HC4053D(BJ) |
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Виробник: TOSHIBA
Category: Decoders, multiplexers, switches
Description: IC: digital; analog,demultiplexer,multiplexer; Ch: 3; IN: 3; SMD
Mounting: SMD
Family: HC
Kind of package: reel; tape
Number of channels: 3
Number of inputs: 3
Manufacturer series: HC
Kind of integrated circuit: analog; demultiplexer; multiplexer
Case: SO16
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital; analog,demultiplexer,multiplexer; Ch: 3; IN: 3; SMD
Mounting: SMD
Family: HC
Kind of package: reel; tape
Number of channels: 3
Number of inputs: 3
Manufacturer series: HC
Kind of integrated circuit: analog; demultiplexer; multiplexer
Case: SO16
Type of integrated circuit: digital
на замовлення 482 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.45 грн |
| 43+ | 9.83 грн |
| 74HC4052D(BJ) |
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Виробник: TOSHIBA
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 2; IN: 8; C²MOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: C²MOS
Mounting: SMD
Case: SO16
Manufacturer series: HC
Family: HC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Terminal pitch: 1.27mm
Delay time: 15ns
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 2; IN: 8; C²MOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: C²MOS
Mounting: SMD
Case: SO16
Manufacturer series: HC
Family: HC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Terminal pitch: 1.27mm
Delay time: 15ns
на замовлення 2686 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.46 грн |
| 18+ | 22.96 грн |
| 25+ | 19.65 грн |
| 50+ | 17.42 грн |
| 100+ | 15.44 грн |
| 250+ | 14.12 грн |
| 2SA1943-O(Q) |
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Виробник: TOSHIBA
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 230V; 15A; 150W; TO3PL
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 230V
Collector current: 15A
Power dissipation: 150W
Case: TO3PL
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 230V; 15A; 150W; TO3PL
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 230V
Collector current: 15A
Power dissipation: 150W
Case: TO3PL
Mounting: THT
Kind of package: tube
Frequency: 30MHz
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 190.30 грн |
| 10+ | 141.20 грн |
| 25+ | 123.86 грн |
| 100+ | 111.47 грн |
| 74HC04D(BJ) |
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Виробник: TOSHIBA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; SMD; SO14; 2÷6VDC; -40÷125°C; reel,tape; HC
Type of integrated circuit: digital
Family: HC
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Case: SO14
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; SMD; SO14; 2÷6VDC; -40÷125°C; reel,tape; HC
Type of integrated circuit: digital
Family: HC
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Case: SO14
на замовлення 733 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.69 грн |
| 13+ | 31.96 грн |
| 25+ | 25.27 грн |
| 100+ | 17.84 грн |
| 250+ | 14.62 грн |
| 500+ | 12.88 грн |
| 74HC125D(BJ) |
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Виробник: TOSHIBA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; C²MOS; SMD; SO14; HC; 10ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: C²MOS
Case: SO14
Manufacturer series: HC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Delay time: 10ns
Terminal pitch: 1.27mm
Supply voltage: 2...6V DC
Number of channels: 4
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; C²MOS; SMD; SO14; HC; 10ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: C²MOS
Case: SO14
Manufacturer series: HC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Delay time: 10ns
Terminal pitch: 1.27mm
Supply voltage: 2...6V DC
Number of channels: 4
Kind of output: 3-state
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од. на суму грн.
| TBD62003APG(Z,HZ) |
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Виробник: TOSHIBA
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; DIP16; 0.5A; 2÷50V; Ch: 7; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: DIP16
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 7
Mounting: THT
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; DIP16; 0.5A; 2÷50V; Ch: 7; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: DIP16
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 7
Mounting: THT
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
на замовлення 614 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 62.76 грн |
| 25+ | 55.32 грн |
| 100+ | 50.37 грн |
| TB6560AFG(O,8) |
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Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; PWM; QFP64; 1.5A; 4.5÷34V
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Case: QFP64
Output current: 1.5A
Output voltage: 4.5...34V
Number of channels: 2
Mounting: SMD
Operating temperature: -30...85°C
Interface: PWM
Input voltage: 0...5.5V
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; PWM; QFP64; 1.5A; 4.5÷34V
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Case: QFP64
Output current: 1.5A
Output voltage: 4.5...34V
Number of channels: 2
Mounting: SMD
Operating temperature: -30...85°C
Interface: PWM
Input voltage: 0...5.5V
на замовлення 1224 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 336.13 грн |
| 3+ | 280.75 грн |
| 10+ | 260.10 грн |
| 25+ | 248.54 грн |
| 90+ | 222.95 грн |
| 74HC14D(BJ) |
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Виробник: TOSHIBA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; C²MOS; SMD; SO14; 2÷6VDC; -40÷125°C; 11ns; HC
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Delay time: 11ns
Terminal pitch: 1.27mm
Supply voltage: 2...6V DC
Technology: C²MOS
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; C²MOS; SMD; SO14; 2÷6VDC; -40÷125°C; 11ns; HC
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Delay time: 11ns
Terminal pitch: 1.27mm
Supply voltage: 2...6V DC
Technology: C²MOS
на замовлення 613 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.30 грн |
| 21+ | 20.31 грн |
| 50+ | 17.84 грн |
| 250+ | 15.03 грн |
| 74HC595D(BJ) |
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Виробник: TOSHIBA
Category: Counters/dividers
Description: IC: digital; shift register,latch; C²MOS; HC; SMD; SO16; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: latch; shift register
Technology: C²MOS
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of output: 3-state
Delay time: 12ns
Terminal pitch: 1.27mm
Manufacturer series: HC
Category: Counters/dividers
Description: IC: digital; shift register,latch; C²MOS; HC; SMD; SO16; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: latch; shift register
Technology: C²MOS
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of output: 3-state
Delay time: 12ns
Terminal pitch: 1.27mm
Manufacturer series: HC
на замовлення 4849 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.02 грн |
| 17+ | 25.18 грн |
| 25+ | 19.98 грн |
| 50+ | 16.68 грн |
| 100+ | 14.20 грн |
| 74HC00D(BJ) |
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Виробник: TOSHIBA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; C²MOS; SMD; SO14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Family: HC
Kind of package: reel; tape
Technology: C²MOS
Delay time: 6ns
Terminal pitch: 1.27mm
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; C²MOS; SMD; SO14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Family: HC
Kind of package: reel; tape
Technology: C²MOS
Delay time: 6ns
Terminal pitch: 1.27mm
на замовлення 1821 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.69 грн |
| 12+ | 36.00 грн |
| 14+ | 30.55 грн |
| 25+ | 24.36 грн |
| 100+ | 17.51 грн |
| 250+ | 14.53 грн |
| 500+ | 12.88 грн |
| 1000+ | 12.47 грн |
| 2SC5200-O(Q) |
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Виробник: TOSHIBA
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 230V; 15A; 150W; TO3PL
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 230V
Collector current: 15A
Power dissipation: 150W
Case: TO3PL
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 230V; 15A; 150W; TO3PL
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 230V
Collector current: 15A
Power dissipation: 150W
Case: TO3PL
Mounting: THT
Kind of package: tube
Frequency: 30MHz
на замовлення 788 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 185.85 грн |
| 10+ | 118.90 грн |
| 50+ | 97.44 грн |
| 80+ | 93.31 грн |
| 100+ | 90.83 грн |
| 200+ | 85.05 грн |
| 500+ | 80.92 грн |
| 74HC4050D(BJ) |
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Виробник: TOSHIBA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; HC; 2÷6VDC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Manufacturer series: HC
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; HC; 2÷6VDC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Manufacturer series: HC
Kind of package: reel; tape
на замовлення 3038 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 72.92 грн |
| 11+ | 40.87 грн |
| 25+ | 34.35 грн |
| 100+ | 26.59 грн |
| 250+ | 22.79 грн |
| 500+ | 20.31 грн |
| 1000+ | 18.17 грн |
| 2500+ | 17.67 грн |
| BAV70,LM(T |
Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 0.9pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.15W
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 0.9pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.15W
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: ultrafast switching
на замовлення 2822 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 9.96 грн |
| 75+ | 5.53 грн |
| 100+ | 5.04 грн |
| 250+ | 4.46 грн |
| 1000+ | 3.96 грн |
| 74HC245D(BJ) |
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Виробник: TOSHIBA
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver; Ch: 8; C²MOS; SMD; SO20; HC; -40÷125°C
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Manufacturer series: HC
Mounting: SMD
Case: SO20
Delay time: 10ns
Terminal pitch: 1.27mm
Number of channels: 8
Kind of package: reel; tape
Kind of integrated circuit: bus transceiver
Technology: C²MOS
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver; Ch: 8; C²MOS; SMD; SO20; HC; -40÷125°C
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Manufacturer series: HC
Mounting: SMD
Case: SO20
Delay time: 10ns
Terminal pitch: 1.27mm
Number of channels: 8
Kind of package: reel; tape
Kind of integrated circuit: bus transceiver
Technology: C²MOS
Type of integrated circuit: digital
на замовлення 1182 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 72.92 грн |
| 10+ | 48.14 грн |
| 25+ | 38.40 грн |
| 100+ | 27.25 грн |
| 250+ | 22.54 грн |
| 500+ | 20.89 грн |
| TLP185(GB-TPL,SE(T |
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Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-600%@5mA
Collector-emitter voltage: 80V
Case: SO6
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-600%@5mA
Collector-emitter voltage: 80V
Case: SO6
на замовлення 6774 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 71.50 грн |
| 30+ | 13.79 грн |
| 100+ | 12.63 грн |
| 125+ | 12.55 грн |
| TLP185(GR-TPL,SE(T |
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Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-300%@5mA
Collector-emitter voltage: 80V
Case: SO6
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-300%@5mA
Collector-emitter voltage: 80V
Case: SO6
на замовлення 12032 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.30 грн |
| 18+ | 22.96 грн |
| 34+ | 12.47 грн |
| 50+ | 9.91 грн |
| 74HC08D(BJ) |
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Виробник: TOSHIBA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; C²MOS; SMD; SO14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Family: HC
Technology: C²MOS
Delay time: 6ns
Kind of package: reel; tape
Terminal pitch: 1.27mm
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; C²MOS; SMD; SO14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Family: HC
Technology: C²MOS
Delay time: 6ns
Kind of package: reel; tape
Terminal pitch: 1.27mm
на замовлення 293 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.90 грн |
| 23+ | 18.17 грн |
| 50+ | 15.28 грн |
| 250+ | 13.05 грн |
| TLP350H(TP1.F) |
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Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: totem pole; Uinsul: 3.75kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 3.75kV
Collector-emitter voltage: 30V
Case: DIP8
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 25kV/μs
Collector current: 3mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: totem pole; Uinsul: 3.75kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 3.75kV
Collector-emitter voltage: 30V
Case: DIP8
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 25kV/μs
Collector current: 3mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP350H(F) |
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Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: totem pole; Uinsul: 3.75kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 3.75kV
Collector-emitter voltage: 30V
Case: DIP8
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 25kV/μs
Collector current: 3mA
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: totem pole; Uinsul: 3.75kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 3.75kV
Collector-emitter voltage: 30V
Case: DIP8
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 25kV/μs
Collector current: 3mA
товару немає в наявності
В кошику
од. на суму грн.
| TLP291(SE(T |
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Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 80V
Case: SO4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 5V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 80V
Case: SO4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 5V
товару немає в наявності
В кошику
од. на суму грн.
| TLP291(BL.SE(T |
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Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 200-600%@5mA
Collector-emitter voltage: 80V
Case: SO4
Turn-on time: 7µs
Turn-off time: 7µs
Max. off-state voltage: 5V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 200-600%@5mA
Collector-emitter voltage: 80V
Case: SO4
Turn-on time: 7µs
Turn-off time: 7µs
Max. off-state voltage: 5V
на замовлення 2674 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.01 грн |
| 31+ | 13.62 грн |
| 175+ | 11.99 грн |
| 250+ | 11.26 грн |
| 1050+ | 10.32 грн |






































