Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40748) > Сторінка 345 з 680
| Фото | Назва | Виробник | Інформація |
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VS-3EJH01-M3/6B | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 3A DO221AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-2EJH02HM3/6B | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 2A DO221ACPackaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 37945 шт: термін постачання 21-31 дні (днів) |
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VS-2EJH02-M3/6B | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 2A DO221ACPackaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
на замовлення 17871 шт: термін постачання 21-31 дні (днів) |
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VS-3EJH01HM3/6B | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 3A DO221AC |
на замовлення 181 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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VS-3EJH01-M3/6B | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 3A DO221AC |
на замовлення 7962 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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VS-1EFH01WHM3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-1EFH02WHM3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-1EFH01W-M3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-1EFH02W-M3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A SMF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-1EFH02WHM3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-1EFH02W-M3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A SMF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V20DL45-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 20A TO263AC |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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V30DL45BP-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 30A SMPDPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A Current - Reverse Leakage @ Vr: 3 mA @ 45 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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V20DL45-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 20A TO263AC |
на замовлення 9778 шт: термін постачання 21-31 дні (днів) |
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V30DL45BP-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 30A SMPDPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: SMPD Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A Current - Reverse Leakage @ Vr: 3 mA @ 45 V |
на замовлення 6314 шт: термін постачання 21-31 дні (днів) |
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V30DL45-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 30A TO263ACPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A Current - Reverse Leakage @ Vr: 3 mA @ 45 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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V40DL45BP-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 40A TO263ACPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 40A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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V30DL45-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 30A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A Current - Reverse Leakage @ Vr: 3 mA @ 45 V |
на замовлення 4248 шт: термін постачання 21-31 дні (днів) |
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V40DL45BP-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 40A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 40A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
на замовлення 3974 шт: термін постачання 21-31 дні (днів) |
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PLZ18A-G3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 16V 500MW DO219AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PLZ18C-G3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 500MW DO219ACPackaging: Tape & Reel (TR) Tolerance: ±3% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 23 Ohms Supplier Device Package: DO-219AC (microSMF) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PLZ24B-G3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 23.19V 500MW DO219ACPackaging: Tape & Reel (TR) Tolerance: ±3% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 23.19 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: DO-219AC (microSMF) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 19 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SE10DGHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 3A TO263ACPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 67pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 15 µA @ 400 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SE12DG-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 3.2A TO263ACPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 90pF @ 4V, 1MHz Current - Average Rectified (Io): 3.2A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 12 A Current - Reverse Leakage @ Vr: 20 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V40DL45-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 40A TO263ACPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 40A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V40M150C-M3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V TO220 |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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V60M120C-M3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V TO220 |
на замовлення 1888 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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VT60M45C-M3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 45V 30A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220AB Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A Current - Reverse Leakage @ Vr: 450 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PLZ18A-G3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 16V 500MW DO219AC |
на замовлення 1861 шт: термін постачання 21-31 дні (днів) |
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PLZ18C-G3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 500MW DO219ACTolerance: ±3% Packaging: Cut Tape (CT) Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 23 Ohms Supplier Device Package: DO-219AC (microSMF) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 13 V |
на замовлення 1432 шт: термін постачання 21-31 дні (днів) |
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PLZ24B-G3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 23.19V 500MW DO219ACTolerance: ±3% Packaging: Cut Tape (CT) Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 23.19 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: DO-219AC (microSMF) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 19 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SE10DGHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 3A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 67pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 15 µA @ 400 V Qualification: AEC-Q101 |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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V40DL45-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 40A TO263ACPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 40A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A Current - Reverse Leakage @ Vr: 5 mA @ 45 V |
на замовлення 6838 шт: термін постачання 21-31 дні (днів) |
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VS-10CSH02HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 5A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 18 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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VS-4CSH01HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE HFAST REC 100V 2A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 2A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-4CSH02HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 2A TO277A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-4CSH02-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE HFAST REC 200V 2A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 2A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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VS-4ESH01HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 4A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-4ESH01-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 4A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-4ESH02HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 4A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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VS-6CSH01-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 100V 3A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-6CSH02-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE HYP FAST 200V 3A TO277A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-6ESH01HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 6A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -60°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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VS-6ESH01-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 6A TO277A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-6ESH06HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 6A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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VS-6ESH06-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 6A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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VS-6ESU06HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 6A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 58 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-6ESU06-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 6A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 58 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-10CSH02HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 18 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2018 шт: термін постачання 21-31 дні (днів) |
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VS-4CSH01HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE HFAST REC 100V 2A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 2A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-4CSH02HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 2A TO277A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-4CSH02-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE HFAST REC 200V 2A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 2A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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VS-4ESH01HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 4A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 743 шт: термін постачання 21-31 дні (днів) |
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VS-4ESH01-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 4A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
на замовлення 2228 шт: термін постачання 21-31 дні (днів) |
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VS-4ESH02HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 4A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 1920 шт: термін постачання 21-31 дні (днів) |
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VS-6CSH01-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 100V 3A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
на замовлення 1104 шт: термін постачання 21-31 дні (днів) |
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VS-6CSH02-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE HYP FAST 200V 3A TO277A |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
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VS-6ESH01HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 6A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -60°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 1959 шт: термін постачання 21-31 дні (днів) |
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VS-6ESH01-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 6A TO277A |
на замовлення 839 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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VS-6ESH06HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 6A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3225 шт: термін постачання 21-31 дні (днів) |
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| VS-3EJH01-M3/6B |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO221AC
Description: DIODE GEN PURP 100V 3A DO221AC
товару немає в наявності
В кошику
од. на суму грн.
| VS-2EJH02HM3/6B |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 2A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 37945 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 55.75 грн |
| 10+ | 35.02 грн |
| 100+ | 24.13 грн |
| 500+ | 17.26 грн |
| 1000+ | 14.67 грн |
| 2000+ | 13.84 грн |
| 5000+ | 12.28 грн |
| VS-2EJH02-M3/6B |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Description: DIODE STANDARD 200V 2A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 17871 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 41.17 грн |
| 15+ | 23.29 грн |
| 100+ | 20.68 грн |
| 500+ | 14.82 грн |
| 1000+ | 11.07 грн |
| 2000+ | 10.65 грн |
| 5000+ | 10.06 грн |
| VS-3EJH01HM3/6B |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO221AC
Description: DIODE GEN PURP 100V 3A DO221AC
на замовлення 181 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| VS-3EJH01-M3/6B |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO221AC
Description: DIODE GEN PURP 100V 3A DO221AC
на замовлення 7962 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| VS-1EFH01WHM3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| VS-1EFH02WHM3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| VS-1EFH01W-M3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-1EFH02W-M3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A SMF
Description: DIODE GEN PURP 200V 1A SMF
товару немає в наявності
В кошику
од. на суму грн.
| VS-1EFH02WHM3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| VS-1EFH02W-M3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A SMF
Description: DIODE GEN PURP 200V 1A SMF
товару немає в наявності
В кошику
од. на суму грн.
| V20DL45-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A TO263AC
Description: DIODE SCHOTTKY 45V 20A TO263AC
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 36.20 грн |
| V30DL45BP-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Description: DIODE SCHOTTKY 45V 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 34.03 грн |
| 4000+ | 30.16 грн |
| V20DL45-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A TO263AC
Description: DIODE SCHOTTKY 45V 20A TO263AC
на замовлення 9778 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.33 грн |
| 10+ | 66.07 грн |
| 100+ | 51.51 грн |
| 500+ | 39.93 грн |
| 1000+ | 32.71 грн |
| V30DL45BP-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Description: DIODE SCHOTTKY 45V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 6314 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.06 грн |
| 10+ | 65.91 грн |
| 100+ | 51.96 грн |
| 500+ | 38.31 грн |
| 1000+ | 34.28 грн |
| V30DL45-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Description: DIODE SCHOTTKY 45V 30A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 34.77 грн |
| V40DL45BP-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 38.06 грн |
| V30DL45-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Description: DIODE SCHOTTKY 45V 30A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 4248 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 96.91 грн |
| 10+ | 65.08 грн |
| 100+ | 51.96 грн |
| 500+ | 38.31 грн |
| 1000+ | 34.95 грн |
| V40DL45BP-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 3974 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.77 грн |
| 10+ | 72.51 грн |
| 100+ | 56.39 грн |
| 500+ | 44.86 грн |
| 1000+ | 36.54 грн |
| PLZ18A-G3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Description: DIODE ZENER 16V 500MW DO219AC
товару немає в наявності
В кошику
од. на суму грн.
| PLZ18C-G3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
Description: DIODE ZENER 18V 500MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
товару немає в наявності
В кошику
од. на суму грн.
| PLZ24B-G3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 23.19V 500MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 23.19 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Description: DIODE ZENER 23.19V 500MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 23.19 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
товару немає в наявності
В кошику
од. на суму грн.
| SE10DGHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 3A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SE12DG-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3.2A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 12 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Description: DIODE STANDARD 400V 3.2A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.2A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 12 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| V40DL45-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 41.57 грн |
| 4000+ | 37.16 грн |
| 6000+ | 36.99 грн |
| V40M150C-M3/4W |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V TO220
Description: DIODE SCHOTTKY 150V TO220
на замовлення 22 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| V60M120C-M3/4W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V TO220
Description: DIODE SCHOTTKY 120V TO220
на замовлення 1888 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| VT60M45C-M3/4W |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 45V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PLZ18A-G3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Description: DIODE ZENER 16V 500MW DO219AC
на замовлення 1861 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.59 грн |
| 16+ | 21.23 грн |
| 100+ | 11.28 грн |
| 500+ | 6.97 грн |
| 1000+ | 4.74 грн |
| PLZ18C-G3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
Description: DIODE ZENER 18V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
на замовлення 1432 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.87 грн |
| 21+ | 16.35 грн |
| 100+ | 7.99 грн |
| 500+ | 6.25 грн |
| 1000+ | 4.35 грн |
| PLZ24B-G3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 23.19V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 23.19 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Description: DIODE ZENER 23.19V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 23.19 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
товару немає в наявності
В кошику
од. на суму грн.
| SE10DGHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 3A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.76 грн |
| 10+ | 61.28 грн |
| V40DL45-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 6838 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.07 грн |
| 10+ | 76.15 грн |
| 100+ | 60.12 грн |
| 500+ | 44.58 грн |
| 1000+ | 40.77 грн |
| VS-10CSH02HM3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 28.39 грн |
| VS-4CSH01HM3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HFAST REC 100V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE HFAST REC 100V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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| VS-4CSH02HM3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 2A TO277A
Description: DIODE ARRAY GP 200V 2A TO277A
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В кошику
од. на суму грн.
| VS-4CSH02-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HFAST REC 200V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Description: DIODE HFAST REC 200V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 17.89 грн |
| VS-4ESH01HM3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| VS-4ESH01-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE STANDARD 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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В кошику
од. на суму грн.
| VS-4ESH02HM3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 21.23 грн |
| VS-6CSH01-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE ARRAY GP 100V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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В кошику
од. на суму грн.
| VS-6CSH02-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HYP FAST 200V 3A TO277A
Description: DIODE HYP FAST 200V 3A TO277A
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В кошику
од. на суму грн.
| VS-6ESH01HM3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -60°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -60°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 19.38 грн |
| VS-6ESH01-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A TO277A
Description: DIODE GEN PURP 100V 6A TO277A
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В кошику
од. на суму грн.
| VS-6ESH06HM3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 24.13 грн |
| VS-6ESH06-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 20.48 грн |
| VS-6ESU06HM3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| VS-6ESU06-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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В кошику
од. на суму грн.
| VS-10CSH02HM3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2018 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.62 грн |
| 10+ | 56.08 грн |
| 100+ | 38.92 грн |
| 500+ | 29.26 грн |
| VS-4CSH01HM3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HFAST REC 100V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE HFAST REC 100V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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В кошику
од. на суму грн.
| VS-4CSH02HM3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 2A TO277A
Description: DIODE ARRAY GP 200V 2A TO277A
товару немає в наявності
В кошику
од. на суму грн.
| VS-4CSH02-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HFAST REC 200V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Description: DIODE HFAST REC 200V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.46 грн |
| 10+ | 38.07 грн |
| 100+ | 28.37 грн |
| 500+ | 20.92 грн |
| VS-4ESH01HM3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 743 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 64.32 грн |
| 10+ | 41.13 грн |
| 100+ | 30.39 грн |
| 500+ | 22.02 грн |
| VS-4ESH01-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE STANDARD 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 2228 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.88 грн |
| 11+ | 30.81 грн |
| 100+ | 24.85 грн |
| 500+ | 17.87 грн |
| VS-4ESH02HM3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 1920 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 64.32 грн |
| 10+ | 42.78 грн |
| 100+ | 33.69 грн |
| 500+ | 24.25 грн |
| VS-6CSH01-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE ARRAY GP 100V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 1104 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.62 грн |
| 10+ | 45.18 грн |
| 100+ | 29.49 грн |
| 500+ | 21.35 грн |
| VS-6CSH02-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HYP FAST 200V 3A TO277A
Description: DIODE HYP FAST 200V 3A TO277A
на замовлення 23 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 55.75 грн |
| 10+ | 47.24 грн |
| VS-6ESH01HM3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -60°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -60°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
на замовлення 1959 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 41.17 грн |
| 10+ | 35.84 грн |
| 100+ | 35.15 грн |
| 500+ | 25.61 грн |
| VS-6ESH01-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A TO277A
Description: DIODE GEN PURP 100V 6A TO277A
на замовлення 839 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| VS-6ESH06HM3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3225 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 78.05 грн |
| 10+ | 48.15 грн |
| 100+ | 37.88 грн |
| 500+ | 29.07 грн |
















