Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41410) > Сторінка 351 з 691
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SE40PGHM3_A/H | Vishay General Semiconductor - Diodes Division |
 Description: DIODE STANDARD 200V 2.4A TO277AVoltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 2.4A Capacitance @ Vr, F: 28pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2.2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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SE40PGHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 2.4A TO277A Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 2.4A Capacitance @ Vr, F: 28pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2.2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 6500 шт В кошику од. на суму грн. | ||||||||||
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SS8P6CHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 50V 4A TO277A Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 50 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io) (per Diode): 4A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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SS5P6HM3J_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 5A TO277A Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 150 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 200pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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ES2DHE3J_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO214AA Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 18pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||
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SS10P3CLHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 30V 5A TO277A Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 550 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 30 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||
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SS10P3CLHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 30V 5A TO277A Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 550 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 30 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 6500 шт В кошику од. на суму грн. | ||||||||||
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AS3PKHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2.1A TO277A Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Technology: Avalanche Capacitance @ Vr, F: 37pF @ 4V, 1MHz Current - Average Rectified (Io): 2.1A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 4500 шт В кошику од. на суму грн. | ||||||||||
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AS3PKHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2.1A TO277A Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 2.1A Capacitance @ Vr, F: 37pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 1.2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 6500 шт В кошику од. на суму грн. | ||||||||||
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AR3PKHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.6A TO277A Technology: Avalanche Reverse Recovery Time (trr): 120 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.6A Capacitance @ Vr, F: 34pF @ 4V, 1MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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AR3PKHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.6A TO277A Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.6A Capacitance @ Vr, F: 34pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 120 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN |
товару немає в наявності |
Мінімальне замовлення: 6500 шт В кошику од. на суму грн. | ||||||||||
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AU2PKHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.3A TO277A Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.3A Capacitance @ Vr, F: 29pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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AU2PKHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.3A TO277A Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.3A Capacitance @ Vr, F: 29pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 6500 шт В кошику од. на суму грн. | ||||||||||
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AS4PKHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2.4A TO277A Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 2.4A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 1.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4500 шт В кошику од. на суму грн. | ||||||||||
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AS4PKHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2.4A TO277A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 2.4A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 1.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 6500 шт В кошику од. на суму грн. | ||||||||||
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AR4PKHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.8A TO277A Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.8A Capacitance @ Vr, F: 55pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 120 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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AR4PKHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.8A TO277A Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.8A Reverse Recovery Time (trr): 120 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Capacitance @ Vr, F: 55pF @ 4V, 1MHz Technology: Avalanche |
товару немає в наявності |
Мінімальне замовлення: 6500 шт В кошику од. на суму грн. | ||||||||||
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AU3PKHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.4A TO277A Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.4A Capacitance @ Vr, F: 42pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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AU3PKHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 1.4A TO277A Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 1.4A Capacitance @ Vr, F: 42pF @ 4V, 1MHz Technology: Avalanche Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 6500 шт В кошику од. на суму грн. | ||||||||||
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UH4PBCHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A TO277A Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 21pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||
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UH4PBCHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A TO277A Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 21pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 6500 шт В кошику од. на суму грн. | ||||||||||
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UH4PCCHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 2A TO277A Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 21pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||
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UH4PCCHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 2A TO277A Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 21pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 6500 шт В кошику од. на суму грн. | ||||||||||
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VS-10CDH06HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 5A TO263AC Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 3 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-30CDU06HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 15A TO263AC Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 15 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
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VS-16EDU06HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 16A TO263AC Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 15 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 16 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io): 16A Technology: Standard Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Packaging: Tape & Reel (TR) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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VS-16CDH02HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 8A TO263AC Current - Reverse Leakage @ Vr: 2 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 8 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 27 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
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VS-10CDH06HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 5A TO263AC Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 3 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-30CDU06HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 15A TO263AC Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 1668 шт: термін постачання 21-31 дні (днів) |
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VS-12CDU06-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 6A TO263AC Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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VS-16CDU06-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 8A TO263AC Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
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VS-16CDU06HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 8A TO263AC Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: 175°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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VS-12CDU06-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 6A TO263AC Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 1454 шт: термін постачання 21-31 дні (днів) |
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VS-16CDU06-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 8A TO263AC Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 1863 шт: термін постачання 21-31 дні (днів) |
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VS-16CDU06HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 8A TO263AC Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: 175°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 5785 шт: термін постачання 21-31 дні (днів) |
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BZG05C3V6-E3-TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.6V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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BZG05C3V6-E3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.6V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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BZG05C3V3-E3-TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 1.25W DO214AC |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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BZG05C3V6-HE3-TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.6V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 20 µA @ 1 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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BZG05C3V6-HE3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.6V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 20 µA @ 1 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
| BZG05C3V9-E3-TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.9V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||
| BZG05C3V9-E3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.9V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||
| BZG05C3V9-HE3-TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.9V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||
| BZG05C3V9-HE3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.9V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||
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BZG05C5V1-E3-TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-214AC (SMA) Part Status: Obsolete Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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BZG05C5V1-HE3-TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Part Status: Obsolete Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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BZG05C5V1-HE3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 1.25W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Part Status: Obsolete Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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BZG05C5V6-E3-TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 1.25W DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZG05C5V6-HE3-TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 1.25W DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZG05C6V8-E3-TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 1.25W DO214AC Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 4 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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BZG05C6V8-HE3-TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 1.25W DO214AC Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 4 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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BZG05C6V8-HE3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 1.25W DO214AC Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 4 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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S2AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1.5A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 4500 шт В кошику од. на суму грн. | ||||||||||
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S2AHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1.5A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6400 шт В кошику од. на суму грн. | ||||||||||
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S2MHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1.5A DO214AA Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 16pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
на замовлення 3200 шт: термін постачання 21-31 дні (днів) |
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USB260HM3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 2A DO214AA Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 45pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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USB260HM3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6400 шт В кошику од. на суму грн. | ||||||||||
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VS-GT105LA120UX | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 134A 463W SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: NPT Current - Collector (Ic) (Max): 134 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 463 W Current - Collector Cutoff (Max): 75 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-GT105NA120UX | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 1200V 134A 463W SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Current - Collector (Ic) (Max): 134 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 463 W Current - Collector Cutoff (Max): 75 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-1EFU06-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO219AB Current - Reverse Leakage @ Vr: 3 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 32 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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| SE40PGHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2.4A TO277A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 2.4A TO277A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| SE40PGHM3_A/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2.4A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 200V 2.4A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 6500 шт
В кошику
од. на суму грн.
| SS8P6CHM3_A/H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 50V 4A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 50V 4A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 20.12 грн |
| SS5P6HM3J_A/H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| ES2DHE3J_A/H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
од. на суму грн.
| SS10P3CLHM3_A/H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 550 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 30V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 550 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| SS10P3CLHM3_A/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 550 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 30V 5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 550 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 6500 шт
В кошику
од. на суму грн.
| AS3PKHM3_A/H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2.1A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Avalanche
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE AVALANCHE 800V 2.1A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Avalanche
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 4500 шт
В кошику
од. на суму грн.
| AS3PKHM3_A/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2.1A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.1A
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE AVALANCHE 800V 2.1A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.1A
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 6500 шт
В кошику
од. на суму грн.
| AR3PKHM3_A/H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.6A TO277A
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.6A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Description: DIODE AVALANCHE 800V 1.6A TO277A
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.6A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AR3PKHM3_A/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.6A TO277A
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.6A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Description: DIODE AVALANCHE 800V 1.6A TO277A
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.6A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
товару немає в наявності
Мінімальне замовлення: 6500 шт
В кошику
од. на суму грн.
| AU2PKHM3_A/H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.3A TO277A
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Description: DIODE AVALANCHE 800V 1.3A TO277A
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AU2PKHM3_A/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.3A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE AVALANCHE 800V 1.3A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 6500 шт
В кошику
од. на суму грн.
| AS4PKHM3_A/H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2.4A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE AVALANCHE 800V 2.4A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4500 шт
В кошику
од. на суму грн.
| AS4PKHM3_A/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2.4A TO277A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE AVALANCHE 800V 2.4A TO277A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 6500 шт
В кошику
од. на суму грн.
| AR4PKHM3_A/H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.8A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.8A
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE AVALANCHE 800V 1.8A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.8A
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AR4PKHM3_A/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.8A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.8A
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Technology: Avalanche
Description: DIODE AVALANCHE 800V 1.8A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.8A
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Technology: Avalanche
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Мінімальне замовлення: 6500 шт
В кошику
од. на суму грн.
| AU3PKHM3_A/H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.4A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Description: DIODE AVALANCHE 800V 1.4A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AU3PKHM3_A/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.4A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE AVALANCHE 800V 1.4A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 6500 шт
В кошику
од. на суму грн.
| UH4PBCHM3_A/H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 100V 2A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| UH4PBCHM3_A/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 100V 2A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 6500 шт
В кошику
од. на суму грн.
| UH4PCCHM3_A/H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 150V 2A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| UH4PCCHM3_A/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 2A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 150V 2A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 6500 шт
В кошику
од. на суму грн.
| VS-10CDH06HM3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 5A TO263AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 600V 5A TO263AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| VS-30CDU06HM3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO263AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 600V 15A TO263AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| VS-16EDU06HM3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 16A TO263AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 600V 16A TO263AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io): 16A
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 43.69 грн |
| VS-16CDH02HM3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO263AC
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 27 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY GP 200V 8A TO263AC
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 27 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| VS-10CDH06HM3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 5A TO263AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 600V 5A TO263AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| VS-30CDU06HM3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 600V 15A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Qualification: AEC-Q101
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 167.31 грн |
| 10+ | 113.47 грн |
| 100+ | 85.45 грн |
| 500+ | 66.28 грн |
| VS-12CDU06-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 6A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE ARRAY GP 600V 6A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| VS-16CDU06-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 8A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE ARRAY GP 600V 8A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| VS-16CDU06HM3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 8A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 600V 8A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 43.19 грн |
| VS-12CDU06-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 6A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE ARRAY GP 600V 6A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1454 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.77 грн |
| 10+ | 71.62 грн |
| 100+ | 52.90 грн |
| 500+ | 39.33 грн |
| 1000+ | 36.44 грн |
| VS-16CDU06-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 8A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE ARRAY GP 600V 8A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1863 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.42 грн |
| 10+ | 67.96 грн |
| 100+ | 53.61 грн |
| 500+ | 39.86 грн |
| 1000+ | 36.93 грн |
| VS-16CDU06HM3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 8A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 600V 8A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 5785 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.73 грн |
| 10+ | 84.45 грн |
| 100+ | 62.15 грн |
| 500+ | 46.49 грн |
| 1000+ | 44.51 грн |
| BZG05C3V6-E3-TR3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 3.6V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| BZG05C3V6-E3-TR |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 3.6V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| BZG05C3V3-E3-TR3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 1.25W DO214AC
Description: DIODE ZENER 3.3V 1.25W DO214AC
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| BZG05C3V6-HE3-TR3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.6V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| BZG05C3V6-HE3-TR |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.6V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| BZG05C3V9-E3-TR3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 3.9V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| BZG05C3V9-E3-TR |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 3.9V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| BZG05C3V9-HE3-TR3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| BZG05C3V9-HE3-TR |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| BZG05C5V1-E3-TR3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Obsolete
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V
Description: DIODE ZENER 5.1V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Obsolete
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| BZG05C5V1-HE3-TR3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Obsolete
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Obsolete
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| BZG05C5V1-HE3-TR |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Obsolete
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Obsolete
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1.5 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| BZG05C5V6-E3-TR3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 1.25W DO214AC
Description: DIODE ZENER 5.6V 1.25W DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| BZG05C5V6-HE3-TR3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 1.25W DO214AC
Description: DIODE ZENER 5.6V 1.25W DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| BZG05C6V8-E3-TR3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
Description: DIODE ZENER 6.8V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
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Мінімальне замовлення: 6000 шт
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| BZG05C6V8-HE3-TR3 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
Qualification: AEC-Q101
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Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| BZG05C6V8-HE3-TR |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 6000 шт
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од. на суму грн.
| S2AHE3_A/H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
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Мінімальне замовлення: 4500 шт
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од. на суму грн.
| S2AHE3_A/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 6400 шт
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од. на суму грн.
| S2MHE3_A/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 1KV 1.5A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3200+ | 7.61 грн |
| USB260HM3/52T |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 600V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 750+ | 29.77 грн |
| 2250+ | 24.89 грн |
| USB260HM3/5BT |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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Мінімальне замовлення: 6400 шт
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од. на суму грн.
| VS-GT105LA120UX |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 134A 463W SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 463 W
Current - Collector Cutoff (Max): 75 µA
Description: IGBT MOD 1200V 134A 463W SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 463 W
Current - Collector Cutoff (Max): 75 µA
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| VS-GT105NA120UX |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 134A 463W SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 463 W
Current - Collector Cutoff (Max): 75 µA
Description: IGBT MOD 1200V 134A 463W SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 463 W
Current - Collector Cutoff (Max): 75 µA
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| VS-1EFU06-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 32 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 1A DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 32 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 6.02 грн |
| 30000+ | 5.72 грн |
| 50000+ | 4.86 грн |