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SMBJ13D-M3/H SMBJ13D-M3/H Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 13VWM 21.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.6V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ45D-M3/H SMBJ45D-M3/H Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 45VWM 71.6VC DO214AA
на замовлення 203 шт:
термін постачання 21-31 дні (днів)
9+39.20 грн
12+28.23 грн
100+17.61 грн
Мінімальне замовлення: 9
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SMBJ48D-M3/H SMBJ48D-M3/H Vishay General Semiconductor - Diodes Division tf-smbj48d-m3-h.pdf Description: TVS DIODE 48VWM 76.3VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.9A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 54.1V
Voltage - Clamping (Max) @ Ipp: 76.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ54D-M3/H SMBJ54D-M3/H Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 54VWM 85.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60.9V
Voltage - Clamping (Max) @ Ipp: 85.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 7516 шт:
термін постачання 21-31 дні (днів)
9+40.01 грн
11+29.17 грн
100+18.16 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SMBJ60D-M3/H SMBJ60D-M3/H Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 60VWM 95.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.28A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 67.7V
Voltage - Clamping (Max) @ Ipp: 95.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 4783 шт:
термін постачання 21-31 дні (днів)
12+27.76 грн
18+18.09 грн
100+9.26 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMBJ78D-M3/H SMBJ78D-M3/H Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 78VWM 124VC DO214AA
на замовлення 7442 шт:
термін постачання 21-31 дні (днів)
9+40.01 грн
11+28.94 грн
100+18.05 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SMBJ85D-M3/H SMBJ85D-M3/H Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 85VWM 135VC DO214AA
на замовлення 843 шт:
термін постачання 21-31 дні (днів)
8+41.65 грн
11+30.27 грн
100+18.86 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMBJ110D-M3/H SMBJ110D-M3/H Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 110VWM 174VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.45A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 174V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 4372 шт:
термін постачання 21-31 дні (днів)
9+38.38 грн
14+22.57 грн
100+14.31 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SMBJ160D-M3/H SMBJ160D-M3/H Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 160VWM 256VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.34A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 181V
Voltage - Clamping (Max) @ Ipp: 256V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SMBJ7.5D-M3/I SMBJ7.5D-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 7.5VWM 12.7VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47.2A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.46V
Voltage - Clamping (Max) @ Ipp: 12.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
3200+8.12 грн
Мінімальне замовлення: 3200
В кошику  од. на суму  грн.
SMBJ8.5D-M3/I SMBJ8.5D-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 8.5VWM 14.3VC DO214AA
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SMBJ13D-M3/I SMBJ13D-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 13VWM 21.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.6V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
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SMBJ48D-M3/I SMBJ48D-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 48VWM 76.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.9A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 54.1V
Voltage - Clamping (Max) @ Ipp: 76.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
3200+5.20 грн
Мінімальне замовлення: 3200
В кошику  од. на суму  грн.
SMBJ54D-M3/I SMBJ54D-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 54VWM 85.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60.9V
Voltage - Clamping (Max) @ Ipp: 85.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
3200+7.32 грн
Мінімальне замовлення: 3200
В кошику  од. на суму  грн.
SMBJ60D-M3/I SMBJ60D-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 60VWM 95.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.28A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 67.7V
Voltage - Clamping (Max) @ Ipp: 95.5V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
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SMBJ75D-M3/I SMBJ75D-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 75VWM 119VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.06A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 84.6V
Voltage - Clamping (Max) @ Ipp: 119V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
3200+9.19 грн
6400+8.36 грн
Мінімальне замовлення: 3200
В кошику  од. на суму  грн.
SMBJ100D-M3/I SMBJ100D-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 100VWM 159VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.77A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 113V
Voltage - Clamping (Max) @ Ipp: 159V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
3200+7.51 грн
Мінімальне замовлення: 3200
В кошику  од. на суму  грн.
SMBJ160D-M3/I SMBJ160D-M3/I Vishay General Semiconductor - Diodes Division smbj5cdthrusmbj120cd.pdf Description: TVS DIODE 160VWM 256VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.34A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 181V
Voltage - Clamping (Max) @ Ipp: 256V
Power - Peak Pulse: 600W
Power Line Protection: No
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UH4PDCHM3_A/H UH4PDCHM3_A/H Vishay General Semiconductor - Diodes Division UH4PBC%2CPCC%2CPDC.pdf Description: DIODE ARRAY GP 200V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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UH4PDCHM3_A/I UH4PDCHM3_A/I Vishay General Semiconductor - Diodes Division UH4PBC%2CPCC%2CPDC.pdf Description: DIODE ARRAY GP 200V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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BZG05C9V1-HE3-TR BZG05C9V1-HE3-TR Vishay General Semiconductor - Diodes Division BZG05C_Series.pdf Description: DIODE ZENER 9.1V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Qualification: AEC-Q101
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BZG05C9V1-HE3-TR BZG05C9V1-HE3-TR Vishay General Semiconductor - Diodes Division BZG05C_Series.pdf Description: DIODE ZENER 9.1V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Qualification: AEC-Q101
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BZG05C9V1-E3-TR BZG05C9V1-E3-TR Vishay General Semiconductor - Diodes Division BZG05C_Series.pdf Description: DIODE ZENER 9.1V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
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NS8KTHE3_A/P NS8KTHE3_A/P Vishay General Semiconductor - Diodes Division ns8xt.pdf Description: DIODE GEN PURP 800V 8A TO220AC
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VBUS053AZ-HAF-GS08 VBUS053AZ-HAF-GS08 Vishay General Semiconductor - Diodes Division vbus053a.pdf Description: TVS DIODE 5.5VWM 18VC LLP75-7L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: USB OTG
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 36W
Power Line Protection: Yes
Part Status: Active
на замовлення 16575 шт:
термін постачання 21-31 дні (днів)
13+26.95 грн
16+20.68 грн
100+16.64 грн
Мінімальне замовлення: 13
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BZX85B100-TAP BZX85B100-TAP Vishay General Semiconductor - Diodes Division bzx85.pdf Description: DIODE ZENER 100V 1.3W DO41
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BZX85B82-TR BZX85B82-TR Vishay General Semiconductor - Diodes Division bzx85.pdf Description: DIODE ZENER 82V 1.3W DO41
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BZX85B91-TAP BZX85B91-TAP Vishay General Semiconductor - Diodes Division BZX85_Series.pdf Description: DIODE ZENER 91V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Qualification: AEC-Q101
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BZX85B82-TR BZX85B82-TR Vishay General Semiconductor - Diodes Division bzx85.pdf Description: DIODE ZENER 82V 1.3W DO41
на замовлення 9026 шт:
термін постачання 21-31 дні (днів)
11+31.85 грн
15+22.25 грн
100+12.62 грн
500+7.84 грн
1000+6.01 грн
2000+5.23 грн
Мінімальне замовлення: 11
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BZX85B91-TAP BZX85B91-TAP Vishay General Semiconductor - Diodes Division BZX85_Series.pdf Description: DIODE ZENER 91V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Qualification: AEC-Q101
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VS-VSKH570-18PBF VS-VSKH570-18PBF Vishay General Semiconductor - Diodes Division vs-vskh570-18pbf.pdf Description: SCR MODULE 1.8KV 895A MAGNAPAK
Packaging: Bulk
Package / Case: SUPER MAGN-A-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17800A, 18700A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 570 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Active
Current - On State (It (RMS)) (Max): 895 A
Voltage - Off State: 1.8 kV
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VS-VSUD405CW60 Vishay General Semiconductor - Diodes Division vs-vsud405cw60.pdf Description: DIODE MOD GP 600V 480A TO244AB
Packaging: Tube
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 124 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 480A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.72 V @ 400 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
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VS-GP400TD60S Vishay General Semiconductor - Diodes Division Description: IGBT MOD 600V 758A INT-A-PAK
Packaging: Tube
Package / Case: Dual INT-A-PAK (3 + 8)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.52V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Dual INT-A-PAK
IGBT Type: PT, Trench
Part Status: Obsolete
Current - Collector (Ic) (Max): 758 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1563 W
Current - Collector Cutoff (Max): 200 µA
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VS-100MT060WSP Vishay General Semiconductor - Diodes Division Description: IGBT MODULE 600V 107A 403W MTP
Packaging: Tube
Package / Case: 12-MTP Module
Mounting Type: Through Hole
Input: Single Phase Bridge Rectifier
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.49V @ 15V, 60A
NTC Thermistor: Yes
Supplier Device Package: MTP
Part Status: Obsolete
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 403 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
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VS-150MT060WDF Vishay General Semiconductor - Diodes Division Description: IGBT MOD 600V 138A 12MTP PRESS
Packaging: Tube
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.48V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 12-MTP Pressfit
Part Status: Obsolete
Current - Collector (Ic) (Max): 138 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 14 nF @ 30 V
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VS-70MT160P-P VS-70MT160P-P Vishay General Semiconductor - Diodes Division vs-40mt160p-p.pdf Description: BRIDGE RECT 3P 1.6KV 75A 12MTP
Packaging: Tray
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 12-MTP Pressfit
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
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VS-GP100TS60SFPBF Vishay General Semiconductor - Diodes Division Description: IGBT MOD 600V 337A INT-A-PAK
Packaging: Tube
Package / Case: INT-A-PAK
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.34V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
IGBT Type: PT, Trench
Part Status: Obsolete
Current - Collector (Ic) (Max): 337 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 781 W
Current - Collector Cutoff (Max): 150 µA
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VS-30CPU04HN3 VS-30CPU04HN3 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 400V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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VS-30EPH06P-S1 VS-30EPH06P-S1 Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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VS-40APS16-M3 VS-40APS16-M3 Vishay General Semiconductor - Diodes Division vs-40eps16-m3.pdf Description: DIODE GEN PURP 1.6KV 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
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VS-40APS16PBF VS-40APS16PBF Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.6KV 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
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VS-50TPS12L-M3 VS-50TPS12L-M3 Vishay General Semiconductor - Diodes Division vs-50tps12l-m3.pdf Description: SCR 1.2KV 79A TO247L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 530A @ 100Hz
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.32 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-247L
Part Status: Active
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.2 kV
на замовлення 201 шт:
термін постачання 21-31 дні (днів)
1+339.70 грн
25+200.05 грн
100+168.07 грн
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VS-60APH03-N-S1 VS-60APH03-N-S1 Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 300V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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VS-60APU04HN3 VS-60APU04HN3 Vishay General Semiconductor - Diodes Division vs-60epu04hn3-vs-60apu04hn3.pdf Description: DIODE GEN PURP 400V 60A TO247AC
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VS-60CPU03W-N3 VS-60CPU03W-N3 Vishay General Semiconductor - Diodes Division vs-60cpu03w-n3.pdf Description: DIODE FRED
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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VS-60EPU04HN3 VS-60EPU04HN3 Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 400V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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VS-60EPU06P-S1 VS-60EPU06P-S1 Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 81 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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VS-APH3006L-M3 VS-APH3006L-M3 Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 600V 30A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
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VS-CPH6006L-M3 VS-CPH6006L-M3 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 600V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
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VS-EPH3006L-M3 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 30A TO247-2
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VS-EPU3006L-M3 Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 Long Leads
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
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VS-HFA50PA60CHN3 VS-HFA50PA60CHN3 Vishay General Semiconductor - Diodes Division vs-hfa50pa60chn3.pdf Description: DIODE ARRAY GP 600V 25A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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VS-10CTQ150-1-M3 VS-10CTQ150-1-M3 Vishay General Semiconductor - Diodes Division vs-10ctq150s-m3.pdf Description: DIODE ARR SCHOTT 150V 5A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
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VS-10ETF02S-M3 VS-10ETF02S-M3 Vishay General Semiconductor - Diodes Division vs-10etf02s-m3.pdf Description: DIODE GEN PURP 200V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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VS-10ETF04S-M3 VS-10ETF04S-M3 Vishay General Semiconductor - Diodes Division vs-10etf02s-m3.pdf Description: DIODE GEN PURP 400V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
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VS-10ETF06S-M3 VS-10ETF06S-M3 Vishay General Semiconductor - Diodes Division vs-10etf02s-m3.pdf Description: DIODE STANDARD 600V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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VS-10ETF10S-M3 VS-10ETF10S-M3 Vishay General Semiconductor - Diodes Division vs-10etf10s-m3.pdf Description: DIODE GEN PURP 1KV 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
6+58.79 грн
Мінімальне замовлення: 6
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VS-10ETF12S-M3 VS-10ETF12S-M3 Vishay General Semiconductor - Diodes Division vs-10etf10s-m3.pdf Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-10ETS10S-M3 VS-10ETS10S-M3 Vishay General Semiconductor - Diodes Division vs-10ets08s.pdf Description: DIODE GEN PURP 1KV 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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VS-10ETS12S-M3 VS-10ETS12S-M3 Vishay General Semiconductor - Diodes Division vs-10ets08s.pdf Description: DIODE GEN PURP 1.2KV 10A D2PAK
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SMBJ13D-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ13D-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.6V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ45D-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ45D-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 45VWM 71.6VC DO214AA
на замовлення 203 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+39.20 грн
12+28.23 грн
100+17.61 грн
Мінімальне замовлення: 9
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SMBJ48D-M3/H tf-smbj48d-m3-h.pdf
SMBJ48D-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 48VWM 76.3VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.9A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 54.1V
Voltage - Clamping (Max) @ Ipp: 76.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ54D-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ54D-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 85.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60.9V
Voltage - Clamping (Max) @ Ipp: 85.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 7516 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+40.01 грн
11+29.17 грн
100+18.16 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SMBJ60D-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ60D-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 60VWM 95.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.28A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 67.7V
Voltage - Clamping (Max) @ Ipp: 95.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 4783 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+27.76 грн
18+18.09 грн
100+9.26 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMBJ78D-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ78D-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 78VWM 124VC DO214AA
на замовлення 7442 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+40.01 грн
11+28.94 грн
100+18.05 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SMBJ85D-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ85D-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85VWM 135VC DO214AA
на замовлення 843 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+41.65 грн
11+30.27 грн
100+18.86 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMBJ110D-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ110D-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 110VWM 174VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.45A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 174V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 4372 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.38 грн
14+22.57 грн
100+14.31 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SMBJ160D-M3/H smbj5cdthrusmbj120cd.pdf
SMBJ160D-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 256VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.34A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 181V
Voltage - Clamping (Max) @ Ipp: 256V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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SMBJ7.5D-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ7.5D-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.5VWM 12.7VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47.2A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.46V
Voltage - Clamping (Max) @ Ipp: 12.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3200+8.12 грн
Мінімальне замовлення: 3200
В кошику  од. на суму  грн.
SMBJ8.5D-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ8.5D-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 14.3VC DO214AA
товару немає в наявності
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SMBJ13D-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ13D-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.6V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
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SMBJ48D-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ48D-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 48VWM 76.3VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.9A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 54.1V
Voltage - Clamping (Max) @ Ipp: 76.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3200+5.20 грн
Мінімальне замовлення: 3200
В кошику  од. на суму  грн.
SMBJ54D-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ54D-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 85.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60.9V
Voltage - Clamping (Max) @ Ipp: 85.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3200+7.32 грн
Мінімальне замовлення: 3200
В кошику  од. на суму  грн.
SMBJ60D-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ60D-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 60VWM 95.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.28A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 67.7V
Voltage - Clamping (Max) @ Ipp: 95.5V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
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SMBJ75D-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ75D-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 75VWM 119VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.06A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 84.6V
Voltage - Clamping (Max) @ Ipp: 119V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3200+9.19 грн
6400+8.36 грн
Мінімальне замовлення: 3200
В кошику  од. на суму  грн.
SMBJ100D-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ100D-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 159VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.77A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 113V
Voltage - Clamping (Max) @ Ipp: 159V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3200+7.51 грн
Мінімальне замовлення: 3200
В кошику  од. на суму  грн.
SMBJ160D-M3/I smbj5cdthrusmbj120cd.pdf
SMBJ160D-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 256VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.34A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 181V
Voltage - Clamping (Max) @ Ipp: 256V
Power - Peak Pulse: 600W
Power Line Protection: No
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UH4PDCHM3_A/H UH4PBC%2CPCC%2CPDC.pdf
UH4PDCHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
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UH4PDCHM3_A/I UH4PBC%2CPCC%2CPDC.pdf
UH4PDCHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 2A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
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BZG05C9V1-HE3-TR BZG05C_Series.pdf
BZG05C9V1-HE3-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Qualification: AEC-Q101
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BZG05C9V1-HE3-TR BZG05C_Series.pdf
BZG05C9V1-HE3-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Qualification: AEC-Q101
товару немає в наявності
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BZG05C9V1-E3-TR BZG05C_Series.pdf
BZG05C9V1-E3-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
товару немає в наявності
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NS8KTHE3_A/P ns8xt.pdf
NS8KTHE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 8A TO220AC
товару немає в наявності
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VBUS053AZ-HAF-GS08 vbus053a.pdf
VBUS053AZ-HAF-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 18VC LLP75-7L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: USB OTG
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 36W
Power Line Protection: Yes
Part Status: Active
на замовлення 16575 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.95 грн
16+20.68 грн
100+16.64 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BZX85B100-TAP bzx85.pdf
BZX85B100-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 1.3W DO41
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BZX85B82-TR bzx85.pdf
BZX85B82-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 82V 1.3W DO41
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BZX85B91-TAP BZX85_Series.pdf
BZX85B91-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Qualification: AEC-Q101
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BZX85B82-TR bzx85.pdf
BZX85B82-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 82V 1.3W DO41
на замовлення 9026 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+31.85 грн
15+22.25 грн
100+12.62 грн
500+7.84 грн
1000+6.01 грн
2000+5.23 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BZX85B91-TAP BZX85_Series.pdf
BZX85B91-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Qualification: AEC-Q101
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VS-VSKH570-18PBF vs-vskh570-18pbf.pdf
VS-VSKH570-18PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1.8KV 895A MAGNAPAK
Packaging: Bulk
Package / Case: SUPER MAGN-A-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17800A, 18700A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 570 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Part Status: Active
Current - On State (It (RMS)) (Max): 895 A
Voltage - Off State: 1.8 kV
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VS-VSUD405CW60 vs-vsud405cw60.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 480A TO244AB
Packaging: Tube
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 124 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 480A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.72 V @ 400 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
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VS-GP400TD60S
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 758A INT-A-PAK
Packaging: Tube
Package / Case: Dual INT-A-PAK (3 + 8)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.52V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Dual INT-A-PAK
IGBT Type: PT, Trench
Part Status: Obsolete
Current - Collector (Ic) (Max): 758 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1563 W
Current - Collector Cutoff (Max): 200 µA
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VS-100MT060WSP
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 107A 403W MTP
Packaging: Tube
Package / Case: 12-MTP Module
Mounting Type: Through Hole
Input: Single Phase Bridge Rectifier
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.49V @ 15V, 60A
NTC Thermistor: Yes
Supplier Device Package: MTP
Part Status: Obsolete
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 403 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
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VS-150MT060WDF
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 138A 12MTP PRESS
Packaging: Tube
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.48V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 12-MTP Pressfit
Part Status: Obsolete
Current - Collector (Ic) (Max): 138 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 14 nF @ 30 V
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VS-70MT160P-P vs-40mt160p-p.pdf
VS-70MT160P-P
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 75A 12MTP
Packaging: Tray
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 12-MTP Pressfit
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
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VS-GP100TS60SFPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 337A INT-A-PAK
Packaging: Tube
Package / Case: INT-A-PAK
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.34V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
IGBT Type: PT, Trench
Part Status: Obsolete
Current - Collector (Ic) (Max): 337 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 781 W
Current - Collector Cutoff (Max): 150 µA
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VS-30CPU04HN3
VS-30CPU04HN3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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VS-30EPH06P-S1
VS-30EPH06P-S1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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VS-40APS16-M3 vs-40eps16-m3.pdf
VS-40APS16-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
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VS-40APS16PBF
VS-40APS16PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
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VS-50TPS12L-M3 vs-50tps12l-m3.pdf
VS-50TPS12L-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 79A TO247L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 530A @ 100Hz
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.32 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-247L
Part Status: Active
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.2 kV
на замовлення 201 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+339.70 грн
25+200.05 грн
100+168.07 грн
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VS-60APH03-N-S1
VS-60APH03-N-S1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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VS-60APU04HN3 vs-60epu04hn3-vs-60apu04hn3.pdf
VS-60APU04HN3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 60A TO247AC
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VS-60CPU03W-N3 vs-60cpu03w-n3.pdf
VS-60CPU03W-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE FRED
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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VS-60EPU04HN3
VS-60EPU04HN3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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VS-60EPU06P-S1
VS-60EPU06P-S1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 81 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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VS-APH3006L-M3
VS-APH3006L-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
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VS-CPH6006L-M3
VS-CPH6006L-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
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VS-EPH3006L-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247-2
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VS-EPU3006L-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 Long Leads
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
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VS-HFA50PA60CHN3 vs-hfa50pa60chn3.pdf
VS-HFA50PA60CHN3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 25A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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VS-10CTQ150-1-M3 vs-10ctq150s-m3.pdf
VS-10CTQ150-1-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
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VS-10ETF02S-M3 vs-10etf02s-m3.pdf
VS-10ETF02S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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VS-10ETF04S-M3 vs-10etf02s-m3.pdf
VS-10ETF04S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
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VS-10ETF06S-M3 vs-10etf02s-m3.pdf
VS-10ETF06S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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VS-10ETF10S-M3 vs-10etf10s-m3.pdf
VS-10ETF10S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+58.79 грн
Мінімальне замовлення: 6
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VS-10ETF12S-M3 vs-10etf10s-m3.pdf
VS-10ETF12S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-10ETS10S-M3 vs-10ets08s.pdf
VS-10ETS10S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
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VS-10ETS12S-M3 vs-10ets08s.pdf
VS-10ETS12S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A D2PAK
товару немає в наявності
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