Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41236) > Сторінка 541 з 688
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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1.5SMC400AHM3_B/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 342VWM 548VC DO214ABQualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 548V Voltage - Breakdown (Min): 380V Unidirectional Channels: 1 Supplier Device Package: DO-214AB (SMCJ) Voltage - Reverse Standoff (Typ): 342V Current - Peak Pulse (10/1000µs): 2.7A Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
на замовлення 3162 шт: термін постачання 21-31 дні (днів) |
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3KASMC40AHE3_B/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 40VWM 64.5VC DO214ABQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 3000W (3kW) Voltage - Clamping (Max) @ Ipp: 64.5V Voltage - Breakdown (Min): 44.4V Unidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 40V Current - Peak Pulse (10/1000µs): 46.5A Operating Temperature: -65°C ~ 185°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 850 шт В кошику од. на суму грн. | ||||||||||||||
| 1.5KE300A-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 256VWM 414VC 1.5KE Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 3.6A Voltage - Reverse Standoff (Typ): 256V Supplier Device Package: 1.5KE Unidirectional Channels: 1 Voltage - Breakdown (Min): 285V Voltage - Clamping (Max) @ Ipp: 414V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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P6SMB15A-E3/5B | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 12.8VWM 21.2V DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 28.3A Voltage - Reverse Standoff (Typ): 12.8V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.3V Voltage - Clamping (Max) @ Ipp: 21.2V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 3200 шт: термін постачання 21-31 дні (днів) |
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P6SMB15A-E3/5B | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 12.8VWM 21.2V DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 28.3A Voltage - Reverse Standoff (Typ): 12.8V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.3V Voltage - Clamping (Max) @ Ipp: 21.2V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 3200 шт: термін постачання 21-31 дні (днів) |
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MBRB760-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 7.5A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 7.5A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBRB1635-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 16A TO263ABPackaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 16A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A Current - Reverse Leakage @ Vr: 200 µA @ 35 V |
на замовлення 292 шт: термін постачання 21-31 дні (днів) |
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MMSZ4708-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 22V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 22 V Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 nA @ 16.7 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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MMSZ4708-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 22V 500MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 22 V Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 10 nA @ 16.7 V |
на замовлення 17791 шт: термін постачання 21-31 дні (днів) |
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SS15P3S-M3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 15A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 15A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: 200°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 6500 шт В кошику од. на суму грн. | ||||||||||||||
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SS15P3S-M3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 15A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 15A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: 200°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
на замовлення 5797 шт: термін постачання 21-31 дні (днів) |
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P6SMB91CAHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 77.8VWM 125VC DO214AA |
товару немає в наявності |
Мінімальне замовлення: 6400 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMB91CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 77.8VWM 125VC DO214AA |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMB9.1CAHM3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMB91CAHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 77.8VWM 125VC DO214AA |
товару немає в наявності |
Мінімальне замовлення: 6400 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMB9.1CAHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AA |
товару немає в наявності |
Мінімальне замовлення: 6400 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMB91CAHM3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 77.8VWM 125VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMB91CAHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 77.8VWM 125VC DO214AA |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMB9.1CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AA |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMB9.1CAHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AA |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMB9.1CAHM3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMB91CAHM3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 77.8VWM 125VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMB9.1CAHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AA |
товару немає в наявності |
Мінімальне замовлення: 6400 шт В кошику од. на суму грн. | ||||||||||||||
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BZX384C3V9-HG3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.9V 200MW SOD323 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 3 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BZX384C3V9-HG3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.9V 200MW SOD323 Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 3 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 8225 шт: термін постачання 21-31 дні (днів) |
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TZM5248B-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 500MW SOD80Current - Reverse Leakage @ Vr: 100 nA @ 14 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Supplier Device Package: SOD-80 MiniMELF Impedance (Max) (Zzt): 21 Ohms Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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TZM5248B-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 500MW SOD80Current - Reverse Leakage @ Vr: 100 nA @ 14 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Supplier Device Package: SOD-80 MiniMELF Impedance (Max) (Zzt): 21 Ohms Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 9434 шт: термін постачання 21-31 дні (днів) |
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VS-ETU1506-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 15A TO220ACPackaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
на замовлення 7888 шт: термін постачання 21-31 дні (днів) |
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VS-ETU1506-1HM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 15A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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VS-ETU2006S2LHM3 | Vishay General Semiconductor - Diodes Division |
Description: FREDS - D2PAK |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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VS-E5TX1506FP-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 15A TO220-2FPPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 33 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 961 шт: термін постачання 21-31 дні (днів) |
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VS-E5TW1206FP-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 12A TO220-2FPPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.35 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1088 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH3006-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 30A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 46 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
на замовлення 4963 шт: термін постачання 21-31 дні (днів) |
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VS-E5TW1506FP-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 15A TO2202Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 21 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1145 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH3012-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 30A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 58 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 10787 шт: термін постачання 21-31 дні (днів) |
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VS-E5TX1206FP-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 12A TO220-2FPPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 29 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1048 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH3012S2LHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 30A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 113 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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VS-E5TH3012S2LHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 30A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 113 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 176 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH3006THN3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 30A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 46 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 825 шт: термін постачання 21-31 дні (днів) |
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VS-E5TX3012S2LHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 30A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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VS-E5TX0812THN3 | Vishay General Semiconductor - Diodes Division |
Description: FREDS - TO-220G5,8A,1200V, LOW Q |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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VS-E5TX1512S2LHM3 | Vishay General Semiconductor - Diodes Division |
Description: FREDS - D2PAK |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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VS-E5TX3012THN3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 30A TO220ACQualification: AEC-Q101 Grade: Automotive Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 30A Technology: Standard Reverse Recovery Time (trr): 80 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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VS-E5TH0812THN3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 8A TO220ACQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 50 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 8 A Voltage - DC Reverse (Vr) (Max): 1200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 60 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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VS-E5TH3012THN3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 30A TO220ACQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 30A Technology: Standard Reverse Recovery Time (trr): 85 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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VS-E5TX1512THN3 | Vishay General Semiconductor - Diodes Division |
Description: FREDS - TO-220G5,15A,1200V, LOW |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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GMF05LC-HSF-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 12.5VC LLP75-6LPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 43pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Min) Supplier Device Package: LLP75-6L Unidirectional Channels: 5 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12.5V Power - Peak Pulse: 70W Power Line Protection: No Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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GMF05LC-HSF-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 12.5VC LLP75-6LPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 43pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Min) Supplier Device Package: LLP75-6L Unidirectional Channels: 5 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12.5V Power - Peak Pulse: 70W Power Line Protection: No Part Status: Active |
на замовлення 12800 шт: термін постачання 21-31 дні (днів) |
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| VS-GT50YF120NT | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 1200V 64A 231WPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 231 W Current - Collector Cutoff (Max): 50 µA |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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VS-GT75YF120UT | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 1200V 118A 431WPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 118 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 431 W Current - Collector Cutoff (Max): 100 µA |
на замовлення 106 шт: термін постачання 21-31 дні (днів) |
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| VS-GT75YF120NT | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 1200V 118A 431WCurrent - Collector Cutoff (Max): 100 µA Power - Max: 431 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 118 A Part Status: Active IGBT Type: Trench Field Stop NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Full Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
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TZM5261F-GS18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 47V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5241F-GS18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 11V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5243F-GS18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 13V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5246F-GS18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 16V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5229F-GS18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 4.3V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5257F-GS08 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 33V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5262F-GS08 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 51V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5222F-GS08 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 2.5V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5232F-GS18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 5.6V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. |
| 1.5SMC400AHM3_B/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 342VWM 548VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 548V
Voltage - Breakdown (Min): 380V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 342V
Current - Peak Pulse (10/1000µs): 2.7A
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: TVS DIODE 342VWM 548VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 548V
Voltage - Breakdown (Min): 380V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMCJ)
Voltage - Reverse Standoff (Typ): 342V
Current - Peak Pulse (10/1000µs): 2.7A
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
на замовлення 3162 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 136.24 грн |
| 10+ | 83.91 грн |
| 100+ | 56.76 грн |
| 3KASMC40AHE3_B/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 64.5VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 46.5A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: TVS DIODE 40VWM 64.5VC DO214AB
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 46.5A
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 850 шт
В кошику
од. на суму грн.
| 1.5KE300A-E3/51 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 256VWM 414VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 256VWM 414VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB15A-E3/5B |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12.8VWM 21.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12.8VWM 21.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3200+ | 5.47 грн |
| P6SMB15A-E3/5B |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12.8VWM 21.2V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12.8VWM 21.2V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28.3A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.63 грн |
| 19+ | 16.16 грн |
| 100+ | 8.06 грн |
| MBRB760-E3/45 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 7.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 7.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRB1635-E3/45 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Description: DIODE SCHOTTKY 35V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.37 грн |
| 10+ | 80.50 грн |
| 100+ | 62.60 грн |
| MMSZ4708-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 16.7 V
Description: DIODE ZENER 22V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 16.7 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.16 грн |
| 6000+ | 2.82 грн |
| 9000+ | 2.34 грн |
| MMSZ4708-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 16.7 V
Description: DIODE ZENER 22V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 nA @ 16.7 V
на замовлення 17791 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.24 грн |
| 24+ | 12.38 грн |
| 100+ | 6.06 грн |
| 500+ | 4.74 грн |
| 1000+ | 3.30 грн |
| SS15P3S-M3/87A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
товару немає в наявності
Мінімальне замовлення: 6500 шт
В кошику
од. на суму грн.
| SS15P3S-M3/87A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 15A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 15A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
на замовлення 5797 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.48 грн |
| P6SMB91CAHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AA
Description: TVS DIODE 77.8VWM 125VC DO214AA
товару немає в наявності
Мінімальне замовлення: 6400 шт
В кошику
од. на суму грн.
| P6SMB91CAHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AA
Description: TVS DIODE 77.8VWM 125VC DO214AA
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| P6SMB9.1CAHM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB91CAHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AA
Description: TVS DIODE 77.8VWM 125VC DO214AA
товару немає в наявності
Мінімальне замовлення: 6400 шт
В кошику
од. на суму грн.
| P6SMB9.1CAHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
товару немає в наявності
Мінімальне замовлення: 6400 шт
В кошику
од. на суму грн.
| P6SMB91CAHM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AA
Description: TVS DIODE 77.8VWM 125VC DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB91CAHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AA
Description: TVS DIODE 77.8VWM 125VC DO214AA
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| P6SMB9.1CAHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| P6SMB9.1CAHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| P6SMB9.1CAHM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB91CAHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AA
Description: TVS DIODE 77.8VWM 125VC DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB9.1CAHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
Description: TVS DIODE 7.78VWM 13.4VC DO214AA
товару немає в наявності
Мінімальне замовлення: 6400 шт
В кошику
од. на суму грн.
| BZX384C3V9-HG3-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.15 грн |
| 6000+ | 3.60 грн |
| BZX384C3V9-HG3-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
на замовлення 8225 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.86 грн |
| 44+ | 6.89 грн |
| 100+ | 4.23 грн |
| 500+ | 3.94 грн |
| 1000+ | 3.91 грн |
| TZM5248B-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 21 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 18V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 21 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TZM5248B-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 21 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 18V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 21 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 9434 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.02 грн |
| 17+ | 17.72 грн |
| 100+ | 11.16 грн |
| 500+ | 7.81 грн |
| 1000+ | 6.95 грн |
| 2000+ | 6.22 грн |
| 5000+ | 5.35 грн |
| VS-ETU1506-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE STANDARD 600V 15A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
на замовлення 7888 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.36 грн |
| 50+ | 94.85 грн |
| 100+ | 85.43 грн |
| 500+ | 64.67 грн |
| 1000+ | 59.69 грн |
| 2000+ | 55.50 грн |
| 5000+ | 50.13 грн |
| VS-ETU1506-1HM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| VS-ETU2006S2LHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: FREDS - D2PAK
Description: FREDS - D2PAK
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| VS-E5TX1506FP-N3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 961 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 104.68 грн |
| 50+ | 80.59 грн |
| 100+ | 63.86 грн |
| 500+ | 50.80 грн |
| VS-E5TW1206FP-N3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 12A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.35 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GP 600V 12A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.35 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1088 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.76 грн |
| 10+ | 92.73 грн |
| 100+ | 72.28 грн |
| 500+ | 56.04 грн |
| 1000+ | 45.91 грн |
| VS-E5TH3006-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
на замовлення 4963 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 231.69 грн |
| 50+ | 111.73 грн |
| 100+ | 100.92 грн |
| 500+ | 76.92 грн |
| 1000+ | 71.21 грн |
| 2000+ | 66.40 грн |
| VS-E5TW1506FP-N3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1145 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.38 грн |
| 50+ | 51.47 грн |
| VS-E5TH3012-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE STANDARD 1200V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 10787 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 282.49 грн |
| 50+ | 138.40 грн |
| 100+ | 125.41 грн |
| 500+ | 96.32 грн |
| 1000+ | 89.46 грн |
| 2000+ | 83.69 грн |
| 5000+ | 78.04 грн |
| VS-E5TX1206FP-N3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 12A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GP 600V 12A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1048 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.76 грн |
| 10+ | 92.73 грн |
| 100+ | 72.28 грн |
| 500+ | 56.04 грн |
| 1000+ | 45.91 грн |
| VS-E5TH3012S2LHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| VS-E5TH3012S2LHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.63 грн |
| 10+ | 171.89 грн |
| 100+ | 125.73 грн |
| VS-E5TH3006THN3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Qualification: AEC-Q101
на замовлення 825 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 162.41 грн |
| 50+ | 87.98 грн |
| 100+ | 74.66 грн |
| 500+ | 64.78 грн |
| VS-E5TX3012S2LHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 119.89 грн |
| 1600+ | 108.11 грн |
| VS-E5TX0812THN3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: FREDS - TO-220G5,8A,1200V, LOW Q
Description: FREDS - TO-220G5,8A,1200V, LOW Q
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| VS-E5TX1512S2LHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: FREDS - D2PAK
Description: FREDS - D2PAK
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| VS-E5TX3012THN3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO220AC
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE GEN PURP 1.2KV 30A TO220AC
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| VS-E5TH0812THN3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GEN PURP 1.2KV 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| VS-E5TH3012THN3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GEN PURP 1.2KV 30A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| VS-E5TX1512THN3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: FREDS - TO-220G5,15A,1200V, LOW
Description: FREDS - TO-220G5,15A,1200V, LOW
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| GMF05LC-HSF-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12.5VC LLP75-6L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 43pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 12.5VC LLP75-6L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 43pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 17.78 грн |
| GMF05LC-HSF-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12.5VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 43pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 12.5VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 43pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
на замовлення 12800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.49 грн |
| 10+ | 40.10 грн |
| 100+ | 29.93 грн |
| 500+ | 22.07 грн |
| 1000+ | 17.05 грн |
| VS-GT50YF120NT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 64A 231W
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 231 W
Current - Collector Cutoff (Max): 50 µA
Description: IGBT MODULE 1200V 64A 231W
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 231 W
Current - Collector Cutoff (Max): 50 µA
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8588.65 грн |
| VS-GT75YF120UT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 118A 431W
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 431 W
Current - Collector Cutoff (Max): 100 µA
Description: IGBT MODULE 1200V 118A 431W
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 431 W
Current - Collector Cutoff (Max): 100 µA
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8951.19 грн |
| 12+ | 7559.60 грн |
| VS-GT75YF120NT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 118A 431W
Current - Collector Cutoff (Max): 100 µA
Power - Max: 431 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 118 A
Part Status: Active
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: IGBT MODULE 1200V 118A 431W
Current - Collector Cutoff (Max): 100 µA
Power - Max: 431 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 118 A
Part Status: Active
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8194.55 грн |
| 12+ | 6789.03 грн |
| TZM5261F-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 500MW SOD80
Description: DIODE ZENER 47V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5241F-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW SOD80
Description: DIODE ZENER 11V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5243F-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD80
Description: DIODE ZENER 13V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5246F-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW SOD80
Description: DIODE ZENER 16V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5229F-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW SOD80
Description: DIODE ZENER 4.3V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5257F-GS08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW SOD80
Description: DIODE ZENER 33V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5262F-GS08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 500MW SOD80
Description: DIODE ZENER 51V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5222F-GS08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.5V 500MW SOD80
Description: DIODE ZENER 2.5V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5232F-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD80
Description: DIODE ZENER 5.6V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.














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