Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41148) > Сторінка 542 з 686
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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VS-ETU2006S2LHM3 | Vishay General Semiconductor - Diodes Division |
Description: FREDS - D2PAK |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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VS-E5TX1506FP-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 15A TO220-2FPPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 33 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 961 шт: термін постачання 21-31 дні (днів) |
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VS-E5TW1206FP-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 12A TO220-2FPPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.35 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1088 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH3006-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 30A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 46 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
на замовлення 4963 шт: термін постачання 21-31 дні (днів) |
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VS-E5TW1506FP-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 15A TO2202Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 21 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1145 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH3012-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 30A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 58 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
на замовлення 10498 шт: термін постачання 21-31 дні (днів) |
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VS-E5TX1206FP-N3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 12A TO220-2FPPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 29 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1048 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH3012S2LHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 30A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 113 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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VS-E5TH3012S2LHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 30A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 113 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 176 шт: термін постачання 21-31 дні (днів) |
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VS-E5TH3006THN3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 30A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 46 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 825 шт: термін постачання 21-31 дні (днів) |
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VS-E5TX3012S2LHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 30A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Qualification: AEC-Q101 |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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VS-E5TX0812THN3 | Vishay General Semiconductor - Diodes Division |
Description: FREDS - TO-220G5,8A,1200V, LOW Q |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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VS-E5TX1512S2LHM3 | Vishay General Semiconductor - Diodes Division |
Description: FREDS - D2PAK |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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VS-E5TX3012THN3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 30A TO220ACQualification: AEC-Q101 Grade: Automotive Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 30A Technology: Standard Reverse Recovery Time (trr): 80 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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VS-E5TH0812THN3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 8A TO220ACQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 50 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 8 A Voltage - DC Reverse (Vr) (Max): 1200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 60 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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VS-E5TH3012THN3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 30A TO220ACQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 30A Technology: Standard Reverse Recovery Time (trr): 85 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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VS-E5TX1512THN3 | Vishay General Semiconductor - Diodes Division |
Description: FREDS - TO-220G5,15A,1200V, LOW |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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GMF05LC-HSF-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 12.5VC LLP75-6LPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 43pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Min) Supplier Device Package: LLP75-6L Unidirectional Channels: 5 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12.5V Power - Peak Pulse: 70W Power Line Protection: No Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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GMF05LC-HSF-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 12.5VC LLP75-6LPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 43pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Min) Supplier Device Package: LLP75-6L Unidirectional Channels: 5 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12.5V Power - Peak Pulse: 70W Power Line Protection: No Part Status: Active |
на замовлення 12800 шт: термін постачання 21-31 дні (днів) |
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| VS-GT50YF120NT | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 1200V 64A 231WPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 231 W Current - Collector Cutoff (Max): 50 µA |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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VS-GT75YF120UT | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 1200V 118A 431WPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 118 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 431 W Current - Collector Cutoff (Max): 100 µA |
на замовлення 106 шт: термін постачання 21-31 дні (днів) |
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| VS-GT75YF120NT | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 1200V 118A 431WCurrent - Collector Cutoff (Max): 100 µA Power - Max: 431 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 118 A Part Status: Active IGBT Type: Trench Field Stop NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Full Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
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TZM5261F-GS18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 47V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5241F-GS18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 11V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5243F-GS18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 13V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5246F-GS18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 16V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5229F-GS18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 4.3V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5257F-GS08 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 33V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5262F-GS08 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 51V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5222F-GS08 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 2.5V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5232F-GS18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 5.6V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5248F-GS08 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 18V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5251F-GS08 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 22V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5221F-GS08 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 2.4V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5267F-GS08 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 75V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZM5224F-GS08 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 2.8V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ40AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 40VWM 64.5VC DO214AAPart Status: Active Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 64.5V Voltage - Breakdown (Min): 44.4V Unidirectional Channels: 1 Supplier Device Package: DO-214AA (SMBJ) Voltage - Reverse Standoff (Typ): 40V Current - Peak Pulse (10/1000µs): 9.3A Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2250 шт: термін постачання 21-31 дні (днів) |
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SMBJ40AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 40VWM 64.5VC DO214AAPackaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 64.5V Voltage - Breakdown (Min): 44.4V Unidirectional Channels: 1 Supplier Device Package: DO-214AA (SMBJ) Voltage - Reverse Standoff (Typ): 40V Current - Peak Pulse (10/1000µs): 9.3A Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Part Status: Active |
на замовлення 2530 шт: термін постачання 21-31 дні (днів) |
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P4SMA9.1AHM3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P4SMA9.1AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AC |
товару немає в наявності |
Мінімальне замовлення: 7200 шт В кошику од. на суму грн. | ||||||||||||||
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P4SMA9.1AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AC |
товару немає в наявності |
Мінімальне замовлення: 7200 шт В кошику од. на суму грн. | ||||||||||||||
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P4SMA9.1AHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AC |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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P4SMA9.1AHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AC |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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P4SMA9.1AHM3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7.78VWM 13.4VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V15PM45HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 15A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3000pF @ 4V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A Current - Reverse Leakage @ Vr: 700 µA @ 45 V Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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V15PM45HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 15A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3000pF @ 4V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A Current - Reverse Leakage @ Vr: 700 µA @ 45 V Qualification: AEC-Q101 |
на замовлення 5628 шт: термін постачання 21-31 дні (днів) |
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V20PW45HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 20A SLIMDPAKCurrent - Reverse Leakage @ Vr: 1.5 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: SlimDPAK Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 3000pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 4500 шт В кошику од. на суму грн. | ||||||||||||||
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V20PW45HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 20A SLIMDPAKCurrent - Reverse Leakage @ Vr: 1.5 mA @ 45 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: SlimDPAK Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 3000pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 4489 шт: термін постачання 21-31 дні (днів) |
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BZX55B12-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 500MW DO204AHPackaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZX55B12-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 500MW DO204AHPackaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 20913 шт: термін постачання 21-31 дні (днів) |
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BZX85B62-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 62V 1.3W DO204ALQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 47 V Power - Max: 1.3 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 125 Ohms Voltage - Zener (Nom) (Vz): 62 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±2% Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BZX85B62-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 62V 1.3W DO204ALQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 47 V Power - Max: 1.3 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 125 Ohms Voltage - Zener (Nom) (Vz): 62 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±2% Packaging: Cut Tape (CT) |
на замовлення 24719 шт: термін постачання 21-31 дні (днів) |
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BZX85B12-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 1.3W DO41Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V Power - Max: 1.3 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 9 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±2% Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BZX85B12-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 1.3W DO41Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V Power - Max: 1.3 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 9 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±2% Packaging: Cut Tape (CT) |
на замовлення 23974 шт: термін постачання 21-31 дні (днів) |
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BZX85C75-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 75V 1.3W DO204ALQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 56 V Power - Max: 1.3 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 135 Ohms Voltage - Zener (Nom) (Vz): 75 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BZX85C75-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 75V 1.3W DO204ALQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 56 V Power - Max: 1.3 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 135 Ohms Voltage - Zener (Nom) (Vz): 75 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 19438 шт: термін постачання 21-31 дні (днів) |
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BZX85B3V3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 1.3W DO204ALQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 40 µA @ 1 V Power - Max: 1.3 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 20 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±2% Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BZX85B3V3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 1.3W DO204ALGrade: Automotive Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 40 µA @ 1 V Power - Max: 1.3 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 20 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±2% Packaging: Cut Tape (CT) |
на замовлення 22616 шт: термін постачання 21-31 дні (днів) |
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BZX85C4V7-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.7V 1.3W DO204ALPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 13 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 3 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZX85C4V7-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.7V 1.3W DO204ALPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 13 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 3 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 17700 шт: термін постачання 21-31 дні (днів) |
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| VS-ETU2006S2LHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: FREDS - D2PAK
Description: FREDS - D2PAK
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| VS-E5TX1506FP-N3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 961 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 106.84 грн |
| 50+ | 82.24 грн |
| 100+ | 65.17 грн |
| 500+ | 51.84 грн |
| VS-E5TW1206FP-N3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 12A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.35 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GP 600V 12A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.35 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1088 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 109.98 грн |
| 10+ | 94.63 грн |
| 100+ | 73.77 грн |
| 500+ | 57.19 грн |
| 1000+ | 46.85 грн |
| VS-E5TH3006-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
на замовлення 4963 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 236.45 грн |
| 50+ | 114.03 грн |
| 100+ | 102.99 грн |
| 500+ | 78.51 грн |
| 1000+ | 72.67 грн |
| 2000+ | 67.77 грн |
| VS-E5TW1506FP-N3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1145 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 114.69 грн |
| 50+ | 52.53 грн |
| VS-E5TH3012-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE STANDARD 1200V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
на замовлення 10498 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 279.66 грн |
| 50+ | 136.95 грн |
| 100+ | 124.11 грн |
| 500+ | 95.32 грн |
| 1000+ | 88.53 грн |
| 2000+ | 82.82 грн |
| 5000+ | 77.23 грн |
| VS-E5TX1206FP-N3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 12A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GP 600V 12A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.23 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1048 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 109.98 грн |
| 10+ | 94.63 грн |
| 100+ | 73.77 грн |
| 500+ | 57.19 грн |
| 1000+ | 46.85 грн |
| VS-E5TH3012S2LHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| VS-E5TH3012S2LHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.2KV 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 113 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 263.95 грн |
| 10+ | 175.42 грн |
| 100+ | 128.31 грн |
| VS-E5TH3006THN3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Qualification: AEC-Q101
на замовлення 825 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 165.75 грн |
| 50+ | 89.79 грн |
| 100+ | 76.19 грн |
| 500+ | 66.11 грн |
| VS-E5TX3012S2LHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 800+ | 122.36 грн |
| 1600+ | 110.33 грн |
| VS-E5TX0812THN3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: FREDS - TO-220G5,8A,1200V, LOW Q
Description: FREDS - TO-220G5,8A,1200V, LOW Q
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| VS-E5TX1512S2LHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: FREDS - D2PAK
Description: FREDS - D2PAK
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| VS-E5TX3012THN3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO220AC
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE GEN PURP 1.2KV 30A TO220AC
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| VS-E5TH0812THN3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GEN PURP 1.2KV 8A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| VS-E5TH3012THN3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GEN PURP 1.2KV 30A TO220AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| VS-E5TX1512THN3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: FREDS - TO-220G5,15A,1200V, LOW
Description: FREDS - TO-220G5,15A,1200V, LOW
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| GMF05LC-HSF-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12.5VC LLP75-6L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 43pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 12.5VC LLP75-6L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 43pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 18.15 грн |
| GMF05LC-HSF-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12.5VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 43pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 12.5VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 43pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
на замовлення 12800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.49 грн |
| 10+ | 40.92 грн |
| 100+ | 30.55 грн |
| 500+ | 22.52 грн |
| 1000+ | 17.40 грн |
| VS-GT50YF120NT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 64A 231W
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 231 W
Current - Collector Cutoff (Max): 50 µA
Description: IGBT MODULE 1200V 64A 231W
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 231 W
Current - Collector Cutoff (Max): 50 µA
на замовлення 108 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 8051.21 грн |
| 12+ | 6643.28 грн |
| VS-GT75YF120UT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 118A 431W
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 431 W
Current - Collector Cutoff (Max): 100 µA
Description: IGBT MODULE 1200V 118A 431W
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 431 W
Current - Collector Cutoff (Max): 100 µA
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 9135.28 грн |
| 12+ | 7715.07 грн |
| VS-GT75YF120NT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 118A 431W
Current - Collector Cutoff (Max): 100 µA
Power - Max: 431 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 118 A
Part Status: Active
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: IGBT MODULE 1200V 118A 431W
Current - Collector Cutoff (Max): 100 µA
Power - Max: 431 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 118 A
Part Status: Active
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 8363.08 грн |
| 12+ | 6928.66 грн |
| TZM5261F-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 500MW SOD80
Description: DIODE ZENER 47V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5241F-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW SOD80
Description: DIODE ZENER 11V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5243F-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD80
Description: DIODE ZENER 13V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5246F-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW SOD80
Description: DIODE ZENER 16V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5229F-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW SOD80
Description: DIODE ZENER 4.3V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5257F-GS08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW SOD80
Description: DIODE ZENER 33V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5262F-GS08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 500MW SOD80
Description: DIODE ZENER 51V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5222F-GS08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.5V 500MW SOD80
Description: DIODE ZENER 2.5V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5232F-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD80
Description: DIODE ZENER 5.6V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5248F-GS08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
Description: DIODE ZENER 18V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5251F-GS08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 500MW SOD80
Description: DIODE ZENER 22V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5221F-GS08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW SOD80
Description: DIODE ZENER 2.4V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5267F-GS08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD80
Description: DIODE ZENER 75V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| TZM5224F-GS08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.8V 500MW SOD80
Description: DIODE ZENER 2.8V 500MW SOD80
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ40AHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 64.5VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 9.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TVS DIODE 40VWM 64.5VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 9.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 750+ | 16.45 грн |
| 1500+ | 14.32 грн |
| 2250+ | 13.54 грн |
| SMBJ40AHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 64.5VC DO214AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 9.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Part Status: Active
Description: TVS DIODE 40VWM 64.5VC DO214AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 9.3A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Part Status: Active
на замовлення 2530 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 57.35 грн |
| 10+ | 34.19 грн |
| 100+ | 22.10 грн |
| P4SMA9.1AHM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AC
Description: TVS DIODE 7.78VWM 13.4VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| P4SMA9.1AHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AC
Description: TVS DIODE 7.78VWM 13.4VC DO214AC
товару немає в наявності
Мінімальне замовлення: 7200 шт
В кошику
од. на суму грн.
| P4SMA9.1AHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AC
Description: TVS DIODE 7.78VWM 13.4VC DO214AC
товару немає в наявності
Мінімальне замовлення: 7200 шт
В кошику
од. на суму грн.
| P4SMA9.1AHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AC
Description: TVS DIODE 7.78VWM 13.4VC DO214AC
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| P4SMA9.1AHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AC
Description: TVS DIODE 7.78VWM 13.4VC DO214AC
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| P4SMA9.1AHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78VWM 13.4VC DO214AC
Description: TVS DIODE 7.78VWM 13.4VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| V15PM45HM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 21.42 грн |
| 3000+ | 20.37 грн |
| V15PM45HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 15A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 15A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Qualification: AEC-Q101
на замовлення 5628 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 66.77 грн |
| 10+ | 47.66 грн |
| 100+ | 37.56 грн |
| 500+ | 27.52 грн |
| V20PW45HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 4500 шт
В кошику
од. на суму грн.
| V20PW45HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 4489 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 80.91 грн |
| 10+ | 54.01 грн |
| 100+ | 43.53 грн |
| 500+ | 32.11 грн |
| 1000+ | 28.81 грн |
| 2000+ | 28.45 грн |
| BZX55B12-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 2.11 грн |
| BZX55B12-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20913 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 37+ | 8.64 грн |
| 55+ | 5.60 грн |
| 140+ | 2.17 грн |
| 500+ | 2.01 грн |
| 1000+ | 1.98 грн |
| 2000+ | 1.95 грн |
| 5000+ | 1.89 грн |
| BZX85B62-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 47 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 125 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 62V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 47 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 125 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 4.37 грн |
| 10000+ | 3.81 грн |
| 15000+ | 3.61 грн |
| BZX85B62-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 47 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 125 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 62V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 47 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 125 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
на замовлення 24719 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 45+ | 7.07 грн |
| 80+ | 3.78 грн |
| 100+ | 3.53 грн |
| 500+ | 3.19 грн |
| BZX85B12-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.3W DO41
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 12V 1.3W DO41
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 4.55 грн |
| 10000+ | 3.79 грн |
| BZX85B12-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.3W DO41
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 12V 1.3W DO41
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 9 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
на замовлення 23974 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 26.71 грн |
| 18+ | 17.78 грн |
| 100+ | 9.00 грн |
| 500+ | 6.89 грн |
| 1000+ | 5.11 грн |
| 2000+ | 4.30 грн |
| BZX85C75-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 135 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 75V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 135 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 4.13 грн |
| 10000+ | 3.59 грн |
| 15000+ | 3.40 грн |
| BZX85C75-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 135 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 75V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 135 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 19438 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 14.93 грн |
| 32+ | 9.68 грн |
| 100+ | 4.33 грн |
| 500+ | 3.93 грн |
| 1000+ | 3.79 грн |
| 2000+ | 3.72 грн |
| BZX85B3V3-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 µA @ 1 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 3.3V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 µA @ 1 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 4.37 грн |
| 10000+ | 3.81 грн |
| 15000+ | 3.61 грн |
| BZX85B3V3-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 1.3W DO204AL
Grade: Automotive
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 40 µA @ 1 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 3.3V 1.3W DO204AL
Grade: Automotive
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 40 µA @ 1 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
на замовлення 22616 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 45+ | 7.07 грн |
| 87+ | 3.48 грн |
| 100+ | 3.40 грн |
| BZX85C4V7-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 4.7V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 3.67 грн |
| 10000+ | 3.20 грн |
| BZX85C4V7-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 4.7V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 24+ | 13.35 грн |
| 36+ | 8.62 грн |
| 100+ | 3.85 грн |
| 500+ | 3.49 грн |
| 1000+ | 3.37 грн |
| 2000+ | 3.25 грн |


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