| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BAS40-05-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.1µA Max. forward impulse current: 0.6A Kind of package: 7 inch reel Reverse recovery time: 5ns Power dissipation: 0.2W Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
на замовлення 1021 шт: термін постачання 14-30 дні (днів) |
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1.5KE27CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 13 inch reel; 1.5kW Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 27.05V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 1169 шт: термін постачання 14-30 дні (днів) |
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1N5822-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: 13 inch reel Quantity in set/package: 1400pcs. |
на замовлення 3469 шт: термін постачання 14-30 дні (днів) |
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BYV26C-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Reverse recovery time: 30ns Leakage current: 0.1mA |
на замовлення 7704 шт: термін постачання 14-30 дні (днів) |
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BYV26C-TR | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: 10 inch reel Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Reverse recovery time: 30ns Leakage current: 0.1mA Quantity in set/package: 5000pcs. |
на замовлення 5135 шт: термін постачання 14-30 дні (днів) |
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1.5KE400A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Technology: TransZorb® Kind of package: 13 inch reel Features of semiconductor devices: glass passivated |
на замовлення 1186 шт: термін постачання 14-30 дні (днів) |
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IRF740APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
на замовлення 671 шт: термін постачання 14-30 дні (днів) |
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IRF740ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1396 шт: термін постачання 14-30 дні (днів) |
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IRF740LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
на замовлення 377 шт: термін постачання 14-30 дні (днів) |
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IRF740PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 2379 шт: термін постачання 14-30 дні (днів) |
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IRF740SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 510 шт: термін постачання 14-30 дні (днів) |
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IRF740STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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1.5KE18CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 13 inch reel; 1.5kW Type of diode: TVS Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 1481 шт: термін постачання 14-30 дні (днів) |
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1.5KE180CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 13 inch reel; 1.5kW Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 6.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 1812 шт: термін постачання 14-30 дні (днів) |
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1.5KE18A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 1400 шт: термін постачання 14-30 дні (днів) |
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P6KE200A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15,DO204AC; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 200V Semiconductor structure: unidirectional Case: DO15; DO204AC Mounting: THT Kind of package: 13 inch reel Manufacturer series: P6KE Max. forward impulse current: 2.2A Max. off-state voltage: 171V Features of semiconductor devices: glass passivated Technology: TransZorb® Leakage current: 1µA |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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1N5817-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.45V Max. forward impulse current: 25A Kind of package: 13 inch reel |
на замовлення 3008 шт: термін постачання 14-30 дні (днів) |
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1N5817-E3/73 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.45V Max. forward impulse current: 25A Kind of package: Ammo Pack |
на замовлення 7199 шт: термін постачання 14-30 дні (днів) |
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1N5819-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V Case: DO41 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.6V Load current: 1A Max. forward impulse current: 25A Max. off-state voltage: 40V Kind of package: 13 inch reel |
на замовлення 3221 шт: термін постачання 14-30 дні (днів) |
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1N5819-E3/73 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V Case: DO41 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.6V Load current: 1A Max. forward impulse current: 25A Max. off-state voltage: 40V Kind of package: Ammo Pack |
на замовлення 1487 шт: термін постачання 14-30 дні (днів) |
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| BAV99-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: 7 inch reel Features of semiconductor devices: fast switching; small signal Quantity in set/package: 3000pcs. |
на замовлення 5709 шт: термін постачання 14-30 дні (днів) |
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BAV99-HE3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: 7 inch reel Application: automotive industry Features of semiconductor devices: fast switching; small signal Quantity in set/package: 3000pcs. |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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1N4007GP-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 8pF Reverse recovery time: 2µs Quantity in set/package: 5500pcs. Features of semiconductor devices: glass passivated |
на замовлення 6325 шт: термін постачання 14-30 дні (днів) |
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357B0102MXB251S22 | VISHAY |
Category: Cond. plastic single turn potentiometersDescription: Potentiometer: shaft; 1kΩ; single turn; ±20%; 1W; linear; 6.35mm Potentiometer features: without limiters Characteristics: linear Kind of potentiometer: single turn Shaft diameter: 6.35mm Thread length: 8mm Shaft length: 14mm L shaft length: 22mm Power: 1W Linearity tolerance: ±2% Tolerance: ±20% Resistance: 1kΩ Mechanical durability: 10000000 cycles Fastening thread: 3/8"x32UNEF Manufacturer series: 357 Track material: plastic Type of potentiometer: shaft Shaft surface: smooth |
на замовлення 51 шт: термін постачання 14-30 дні (днів) |
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357B2102MAB251S22 | VISHAY |
Category: Cond. plastic single turn potentiometersDescription: Potentiometer: shaft; 1kΩ; single turn; ±20%; 1W; linear; 6.35mm Characteristics: linear Kind of potentiometer: single turn Shaft diameter: 6.35mm Thread length: 8mm Shaft length: 14mm L shaft length: 22mm Power: 1W Linearity tolerance: ±2% Tolerance: ±20% Electrical rotation angle: 340° Resistance: 1kΩ Mechanical durability: 10000000 cycles Fastening thread: 3/8"x32UNEF Manufacturer series: 357 Track material: plastic Type of potentiometer: shaft Shaft surface: smooth |
на замовлення 68 шт: термін постачання 14-30 дні (днів) |
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VJ1206A100KXAAC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 10pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 1930 шт: термін постачання 14-30 дні (днів) |
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BAS85-GS08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW Semiconductor structure: single diode Max. off-state voltage: 30V Load current: 0.2A Case: MiniMELF; SOD80 Max. forward voltage: 0.24V Max. forward impulse current: 0.6A Max. load current: 0.3A Features of semiconductor devices: small signal Type of diode: Schottky switching Mounting: SMD Capacitance: 10pF Power dissipation: 0.2W Quantity in set/package: 2500pcs. Kind of package: 7 inch reel |
на замовлення 92832 шт: термін постачання 14-30 дні (днів) |
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BAS85-GS18 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns Type of diode: Schottky switching Case: MiniMELF; SOD80 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Features of semiconductor devices: small signal Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 13 inch reel Power dissipation: 0.2W Quantity in set/package: 10000pcs. |
на замовлення 14820 шт: термін постачання 14-30 дні (днів) |
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NTCLE100E3472JB0 | VISHAY |
Category: THT measurement NTC thermistorsDescription: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW Resistance: 4.7kΩ Power: 0.5W Mounting: THT Operating temperature: -40...125°C Material constant B: 3977K Type of sensor: NTC thermistor |
на замовлення 5285 шт: термін постачання 14-30 дні (днів) |
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1.5KE47CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 13 inch reel Type of diode: TVS Max. off-state voltage: 40.2V Breakdown voltage: 47.05V Max. forward impulse current: 23.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 136 шт: термін постачання 14-30 дні (днів) |
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| SIHA25N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHB25N50E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHG25N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP25N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR10100-E3/4W | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.65V Max. forward impulse current: 150A Kind of package: tube Quantity in set/package: 50pcs. |
на замовлення 931 шт: термін постачання 14-30 дні (днів) |
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BZX85C12-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 12V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 13225 шт: термін постачання 14-30 дні (днів) |
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BZX85C5V1-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 5.1V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 5.1V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 9559 шт: термін постачання 14-30 дні (днів) |
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IRF540PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 110A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF540SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 110A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLLR4400 | VISHAY |
Category: THT LEDs RoundDescription: LED; red; 3mm; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC Type of diode: LED Front: convex LED lens: diffused; red Mounting: THT LED colour: red Wavelength: 612...625nm Luminosity: 0.63...1.2mcd LED current: 2mA Terminal pitch: 2.54mm LED diameter: 3mm Operating voltage: 1.9...2.4V DC Number of terminals: 2 Viewing angle: 50° |
на замовлення 2016 шт: термін постачання 14-30 дні (днів) |
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TLLR4400-AS12Z | VISHAY |
Category: THT LEDs RoundDescription: LED; red; 3mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC Type of diode: LED Front: convex LED lens: diffused; red Mounting: THT LED colour: red Wavelength: 612...625nm Luminosity: 0.63...1.2mcd LED current: 2mA Terminal pitch: 2.54mm LED diameter: 3mm Operating voltage: 1.9...2.4V DC Number of terminals: 2 Viewing angle: 25° |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||||||
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TLLR4401 | VISHAY |
Category: THT LEDs RoundDescription: LED; red; 3mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2 Type of diode: LED Front: convex LED lens: diffused; red Mounting: THT LED colour: red Wavelength: 612...625nm Luminosity: 1...2mcd LED current: 2mA Terminal pitch: 2.54mm LED diameter: 3mm Operating voltage: 1.9...2.4V DC Number of terminals: 2 Viewing angle: 50° |
на замовлення 3802 шт: термін постачання 14-30 дні (днів) |
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BZX55C8V2-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 8.2V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: THT Tolerance: ±5% Case: DO35 Kind of package: Ammo Pack Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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VJ1206G107MXYTW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 100uF; 6.3V; X5R; ±20%; SMD; 1206 Type of capacitor: ceramic Capacitance: 100µF Tolerance: ±20% Mounting: SMD Operating temperature: -55...85°C Operating voltage: 6.3V Dielectric: X5R Case - inch: 1206 Case - mm: 3216 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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B340A-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 65A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. |
на замовлення 5135 шт: термін постачання 14-30 дні (днів) |
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SS12-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. |
на замовлення 678 шт: термін постачання 14-30 дні (днів) |
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SMBJ24A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: 7 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 2574 шт: термін постачання 14-30 дні (днів) |
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SMBJ24A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: 13 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||||||
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US1M-E3/5AT | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DO214AC; SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: 13 inch reel Quantity in set/package: 7500pcs. Leakage current: 50µA |
на замовлення 497 шт: термін постачання 14-30 дні (днів) |
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US1M-E3/61T | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DO214AC; SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. Capacitance: 10pF |
на замовлення 7137 шт: термін постачання 14-30 дні (днів) |
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US1MHE3_A/H | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DO214AC; SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. Application: automotive industry Leakage current: 50µA |
на замовлення 739 шт: термін постачання 14-30 дні (днів) |
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IRFZ44PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement |
на замовлення 809 шт: термін постачання 14-30 дні (днів) |
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MBR1645-E3/45 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 16A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.57V Kind of package: tube Quantity in set/package: 50pcs. Max. forward impulse current: 150A |
на замовлення 1200 шт: термін постачання 14-30 дні (днів) |
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UF5408-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 150A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1V Reverse recovery time: 75ns Quantity in set/package: 1400pcs. Features of semiconductor devices: ultrafast switching |
на замовлення 536 шт: термін постачання 14-30 дні (днів) |
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| BZX55C15-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 15V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: THT Tolerance: ±5% Case: DO35 Kind of package: Ammo Pack Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BZX55C15-TR | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 15V; 14 inch reel; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: 14 inch reel Case: DO35 Mounting: THT Tolerance: ±6% Semiconductor structure: single diode Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DG390BDJ-E3 | VISHAY |
Category: Analog multiplexers and switchesDescription: IC: analog switch; SPDT; Ch: 2; DIP16; -15÷15V; tube Type of integrated circuit: analog switch Output configuration: SPDT Number of channels: 2 Case: DIP16 Supply voltage: -15...15V Mounting: THT Kind of package: tube |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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1N4148W-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Kind of package: 7 inch reel Max. forward impulse current: 0.5A Case: SOD123 Max. forward voltage: 1.2V Reverse recovery time: 4ns Quantity in set/package: 3000pcs. Capacitance: 1.5pF Leakage current: 0.1mA |
на замовлення 45008 шт: термін постачання 14-30 дні (днів) |
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1N4148WS-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Kind of package: 7 inch reel Max. forward impulse current: 0.35A Case: SOD323 Max. forward voltage: 1.2V Reverse recovery time: 4ns Quantity in set/package: 3000pcs. Capacitance: 4pF Leakage current: 0.1mA |
на замовлення 18765 шт: термін постачання 14-30 дні (днів) |
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1N4148WS-G3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Kind of package: 7 inch reel Max. forward impulse current: 0.35A Case: SOD323 Max. forward voltage: 1.2V Reverse recovery time: 4ns Quantity in set/package: 3000pcs. Capacitance: 4pF Leakage current: 0.1mA |
на замовлення 2616 шт: термін постачання 14-30 дні (днів) |
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| BAS40-05-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Reverse recovery time: 5ns
Power dissipation: 0.2W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Reverse recovery time: 5ns
Power dissipation: 0.2W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
на замовлення 1021 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 39+ | 11.61 грн |
| 57+ | 7.38 грн |
| 100+ | 4.21 грн |
| 500+ | 3.06 грн |
| 1000+ | 2.74 грн |
| 1.5KE27CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 1169 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 24.11 грн |
| 100+ | 20.40 грн |
| 500+ | 18.07 грн |
| 1N5822-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
на замовлення 3469 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 22.32 грн |
| 25+ | 16.91 грн |
| 100+ | 15.50 грн |
| 500+ | 13.85 грн |
| 1000+ | 13.51 грн |
| BYV26C-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
на замовлення 7704 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 58.04 грн |
| 13+ | 33.58 грн |
| 100+ | 26.95 грн |
| 500+ | 23.30 грн |
| 1000+ | 21.97 грн |
| 2000+ | 20.81 грн |
| 2500+ | 20.48 грн |
| 5000+ | 19.32 грн |
| BYV26C-TR |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
Quantity in set/package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
Quantity in set/package: 5000pcs.
на замовлення 5135 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 27.68 грн |
| 18+ | 24.04 грн |
| 25+ | 23.05 грн |
| 100+ | 21.81 грн |
| 250+ | 20.89 грн |
| 500+ | 20.15 грн |
| 5000+ | 18.90 грн |
| 1.5KE400A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
на замовлення 1186 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 49.11 грн |
| 12+ | 35.32 грн |
| IRF740APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 671 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 171.44 грн |
| 10+ | 88.72 грн |
| 50+ | 78.77 грн |
| 100+ | 72.13 грн |
| 250+ | 64.67 грн |
| 500+ | 63.84 грн |
| IRF740ASPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1396 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 200.01 грн |
| 5+ | 140.12 грн |
| 10+ | 118.56 грн |
| 25+ | 95.35 грн |
| 50+ | 84.57 грн |
| 100+ | 76.28 грн |
| 250+ | 71.30 грн |
| 1000+ | 67.16 грн |
| IRF740LCPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 377 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 255.37 грн |
| 10+ | 121.88 грн |
| 25+ | 99.49 грн |
| 50+ | 87.89 грн |
| 100+ | 77.94 грн |
| 250+ | 69.65 грн |
| IRF740PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 2379 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 147.33 грн |
| 10+ | 90.37 грн |
| 40+ | 77.94 грн |
| 50+ | 76.28 грн |
| 100+ | 69.65 грн |
| 250+ | 62.18 грн |
| 500+ | 58.04 грн |
| 1000+ | 53.06 грн |
| 2000+ | 49.75 грн |
| IRF740SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 510 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 241.08 грн |
| 10+ | 155.05 грн |
| 25+ | 131.00 грн |
| 50+ | 115.25 грн |
| 100+ | 104.47 грн |
| 150+ | 98.67 грн |
| 250+ | 92.86 грн |
| 500+ | 87.06 грн |
| IRF740STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| 1.5KE18CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 1481 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 65.18 грн |
| 9+ | 48.09 грн |
| 11+ | 39.71 грн |
| 25+ | 30.01 грн |
| 50+ | 25.54 грн |
| 100+ | 23.88 грн |
| 1.5KE180CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 1812 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 55.36 грн |
| 10+ | 42.04 грн |
| 100+ | 29.18 грн |
| 500+ | 24.13 грн |
| 1000+ | 22.39 грн |
| 1400+ | 21.72 грн |
| 1.5KE18A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 1400 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 37.50 грн |
| 14+ | 31.09 грн |
| 50+ | 29.35 грн |
| 100+ | 28.27 грн |
| 250+ | 27.11 грн |
| 500+ | 26.12 грн |
| 1400+ | 24.29 грн |
| P6KE200A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 200V
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Kind of package: 13 inch reel
Manufacturer series: P6KE
Max. forward impulse current: 2.2A
Max. off-state voltage: 171V
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 200V
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Kind of package: 13 inch reel
Manufacturer series: P6KE
Max. forward impulse current: 2.2A
Max. off-state voltage: 171V
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| 1N5817-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
на замовлення 3008 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 20.54 грн |
| 25+ | 16.58 грн |
| 28+ | 15.01 грн |
| 100+ | 10.53 грн |
| 250+ | 8.62 грн |
| 500+ | 7.54 грн |
| 1000+ | 6.80 грн |
| 2000+ | 6.05 грн |
| 1N5817-E3/73 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
на замовлення 7199 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 17.86 грн |
| 36+ | 11.61 грн |
| 100+ | 9.29 грн |
| 500+ | 7.79 грн |
| 1000+ | 7.05 грн |
| 3000+ | 5.97 грн |
| 6000+ | 5.39 грн |
| 1N5819-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: 13 inch reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: 13 inch reel
на замовлення 3221 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 24.11 грн |
| 23+ | 18.07 грн |
| 27+ | 15.59 грн |
| 100+ | 9.95 грн |
| 500+ | 7.46 грн |
| 1000+ | 6.80 грн |
| 2000+ | 6.38 грн |
| 1N5819-E3/73 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
на замовлення 1487 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 24+ | 18.75 грн |
| 33+ | 12.85 грн |
| 100+ | 8.87 грн |
| 500+ | 7.05 грн |
| 1000+ | 6.38 грн |
| BAV99-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
на замовлення 5709 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 13.39 грн |
| 63+ | 6.63 грн |
| 112+ | 3.73 грн |
| 500+ | 2.74 грн |
| 1000+ | 2.37 грн |
| 3000+ | 2.00 грн |
| BAV99-HE3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 41.46 грн |
| 1N4007GP-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
на замовлення 6325 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 21+ | 21.43 грн |
| 50+ | 16.67 грн |
| 100+ | 15.09 грн |
| 250+ | 12.69 грн |
| 500+ | 10.61 грн |
| 1000+ | 8.46 грн |
| 357B0102MXB251S22 |
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Виробник: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; 1kΩ; single turn; ±20%; 1W; linear; 6.35mm
Potentiometer features: without limiters
Characteristics: linear
Kind of potentiometer: single turn
Shaft diameter: 6.35mm
Thread length: 8mm
Shaft length: 14mm
L shaft length: 22mm
Power: 1W
Linearity tolerance: ±2%
Tolerance: ±20%
Resistance: 1kΩ
Mechanical durability: 10000000 cycles
Fastening thread: 3/8"x32UNEF
Manufacturer series: 357
Track material: plastic
Type of potentiometer: shaft
Shaft surface: smooth
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; 1kΩ; single turn; ±20%; 1W; linear; 6.35mm
Potentiometer features: without limiters
Characteristics: linear
Kind of potentiometer: single turn
Shaft diameter: 6.35mm
Thread length: 8mm
Shaft length: 14mm
L shaft length: 22mm
Power: 1W
Linearity tolerance: ±2%
Tolerance: ±20%
Resistance: 1kΩ
Mechanical durability: 10000000 cycles
Fastening thread: 3/8"x32UNEF
Manufacturer series: 357
Track material: plastic
Type of potentiometer: shaft
Shaft surface: smooth
на замовлення 51 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2712.62 грн |
| 3+ | 2196.34 грн |
| 10+ | 2002.32 грн |
| 25+ | 1899.51 грн |
| 357B2102MAB251S22 |
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Виробник: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; 1kΩ; single turn; ±20%; 1W; linear; 6.35mm
Characteristics: linear
Kind of potentiometer: single turn
Shaft diameter: 6.35mm
Thread length: 8mm
Shaft length: 14mm
L shaft length: 22mm
Power: 1W
Linearity tolerance: ±2%
Tolerance: ±20%
Electrical rotation angle: 340°
Resistance: 1kΩ
Mechanical durability: 10000000 cycles
Fastening thread: 3/8"x32UNEF
Manufacturer series: 357
Track material: plastic
Type of potentiometer: shaft
Shaft surface: smooth
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; 1kΩ; single turn; ±20%; 1W; linear; 6.35mm
Characteristics: linear
Kind of potentiometer: single turn
Shaft diameter: 6.35mm
Thread length: 8mm
Shaft length: 14mm
L shaft length: 22mm
Power: 1W
Linearity tolerance: ±2%
Tolerance: ±20%
Electrical rotation angle: 340°
Resistance: 1kΩ
Mechanical durability: 10000000 cycles
Fastening thread: 3/8"x32UNEF
Manufacturer series: 357
Track material: plastic
Type of potentiometer: shaft
Shaft surface: smooth
на замовлення 68 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2572.44 грн |
| 3+ | 2107.62 грн |
| 10+ | 2066.99 грн |
| VJ1206A100KXAAC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 1930 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 60+ | 7.15 грн |
| 100+ | 6.72 грн |
| 500+ | 5.91 грн |
| 1000+ | 5.62 грн |
| BAS85-GS08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Semiconductor structure: single diode
Max. off-state voltage: 30V
Load current: 0.2A
Case: MiniMELF; SOD80
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Max. load current: 0.3A
Features of semiconductor devices: small signal
Type of diode: Schottky switching
Mounting: SMD
Capacitance: 10pF
Power dissipation: 0.2W
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Semiconductor structure: single diode
Max. off-state voltage: 30V
Load current: 0.2A
Case: MiniMELF; SOD80
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Max. load current: 0.3A
Features of semiconductor devices: small signal
Type of diode: Schottky switching
Mounting: SMD
Capacitance: 10pF
Power dissipation: 0.2W
Quantity in set/package: 2500pcs.
Kind of package: 7 inch reel
на замовлення 92832 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 21+ | 21.43 грн |
| 35+ | 11.94 грн |
| 100+ | 7.40 грн |
| 500+ | 5.31 грн |
| 1000+ | 4.61 грн |
| 2500+ | 3.83 грн |
| 5000+ | 3.33 грн |
| 7500+ | 3.08 грн |
| 12500+ | 2.79 грн |
| BAS85-GS18 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 13 inch reel
Power dissipation: 0.2W
Quantity in set/package: 10000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 13 inch reel
Power dissipation: 0.2W
Quantity in set/package: 10000pcs.
на замовлення 14820 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 50+ | 8.93 грн |
| 77+ | 5.39 грн |
| 100+ | 4.24 грн |
| 500+ | 3.43 грн |
| 1000+ | 3.12 грн |
| 2500+ | 2.97 грн |
| 5000+ | 2.71 грн |
| 10000+ | 2.37 грн |
| NTCLE100E3472JB0 |
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Виробник: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Resistance: 4.7kΩ
Power: 0.5W
Mounting: THT
Operating temperature: -40...125°C
Material constant B: 3977K
Type of sensor: NTC thermistor
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Resistance: 4.7kΩ
Power: 0.5W
Mounting: THT
Operating temperature: -40...125°C
Material constant B: 3977K
Type of sensor: NTC thermistor
на замовлення 5285 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 29.47 грн |
| 18+ | 24.04 грн |
| 19+ | 22.14 грн |
| 25+ | 19.57 грн |
| 50+ | 17.83 грн |
| 100+ | 16.42 грн |
| 200+ | 15.42 грн |
| 1.5KE47CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 136 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 48.22 грн |
| 12+ | 35.32 грн |
| 50+ | 31.34 грн |
| 100+ | 29.77 грн |
| SIHA25N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
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| SIHB25N50E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHG25N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
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| SIHP25N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
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| MBR10100-E3/4W |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.65V
Max. forward impulse current: 150A
Kind of package: tube
Quantity in set/package: 50pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.65V
Max. forward impulse current: 150A
Kind of package: tube
Quantity in set/package: 50pcs.
на замовлення 931 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 50.00 грн |
| 10+ | 44.19 грн |
| BZX85C12-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 13225 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 19.64 грн |
| 52+ | 8.13 грн |
| 65+ | 6.38 грн |
| 100+ | 4.64 грн |
| 500+ | 4.39 грн |
| BZX85C5V1-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 9559 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 23.22 грн |
| 50+ | 8.46 грн |
| 56+ | 7.46 грн |
| 100+ | 6.56 грн |
| 500+ | 5.17 грн |
| 1000+ | 4.71 грн |
| 2500+ | 4.25 грн |
| 5000+ | 3.98 грн |
| IRF540PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
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| IRF540SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
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| TLLR4400 |
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Виробник: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
Front: convex
LED lens: diffused; red
Mounting: THT
LED colour: red
Wavelength: 612...625nm
Luminosity: 0.63...1.2mcd
LED current: 2mA
Terminal pitch: 2.54mm
LED diameter: 3mm
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Viewing angle: 50°
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
Front: convex
LED lens: diffused; red
Mounting: THT
LED colour: red
Wavelength: 612...625nm
Luminosity: 0.63...1.2mcd
LED current: 2mA
Terminal pitch: 2.54mm
LED diameter: 3mm
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Viewing angle: 50°
на замовлення 2016 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 31.25 грн |
| 18+ | 23.88 грн |
| 21+ | 20.40 грн |
| 27+ | 15.92 грн |
| 50+ | 13.35 грн |
| 100+ | 11.52 грн |
| 250+ | 10.12 грн |
| 500+ | 9.62 грн |
| 1000+ | 9.20 грн |
| TLLR4400-AS12Z |
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Виробник: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
Front: convex
LED lens: diffused; red
Mounting: THT
LED colour: red
Wavelength: 612...625nm
Luminosity: 0.63...1.2mcd
LED current: 2mA
Terminal pitch: 2.54mm
LED diameter: 3mm
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Viewing angle: 25°
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
Front: convex
LED lens: diffused; red
Mounting: THT
LED colour: red
Wavelength: 612...625nm
Luminosity: 0.63...1.2mcd
LED current: 2mA
Terminal pitch: 2.54mm
LED diameter: 3mm
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Viewing angle: 25°
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Мінімальне замовлення: 2 шт
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| TLLR4401 |
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Виробник: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2
Type of diode: LED
Front: convex
LED lens: diffused; red
Mounting: THT
LED colour: red
Wavelength: 612...625nm
Luminosity: 1...2mcd
LED current: 2mA
Terminal pitch: 2.54mm
LED diameter: 3mm
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Viewing angle: 50°
Category: THT LEDs Round
Description: LED; red; 3mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2
Type of diode: LED
Front: convex
LED lens: diffused; red
Mounting: THT
LED colour: red
Wavelength: 612...625nm
Luminosity: 1...2mcd
LED current: 2mA
Terminal pitch: 2.54mm
LED diameter: 3mm
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Viewing angle: 50°
на замовлення 3802 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 26.79 грн |
| 22+ | 19.48 грн |
| 25+ | 17.41 грн |
| 50+ | 15.92 грн |
| 100+ | 14.59 грн |
| 250+ | 12.93 грн |
| 500+ | 11.77 грн |
| 1000+ | 10.70 грн |
| BZX55C8V2-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: THT
Tolerance: ±5%
Case: DO35
Kind of package: Ammo Pack
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: THT
Tolerance: ±5%
Case: DO35
Kind of package: Ammo Pack
Semiconductor structure: single diode
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| VJ1206G107MXYTW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100uF; 6.3V; X5R; ±20%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 100µF
Tolerance: ±20%
Mounting: SMD
Operating temperature: -55...85°C
Operating voltage: 6.3V
Dielectric: X5R
Case - inch: 1206
Case - mm: 3216
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100uF; 6.3V; X5R; ±20%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 100µF
Tolerance: ±20%
Mounting: SMD
Operating temperature: -55...85°C
Operating voltage: 6.3V
Dielectric: X5R
Case - inch: 1206
Case - mm: 3216
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
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| B340A-E3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 65A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 65A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
на замовлення 5135 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 38.39 грн |
| 21+ | 20.56 грн |
| 100+ | 12.85 грн |
| 500+ | 9.62 грн |
| 1000+ | 8.62 грн |
| 1800+ | 7.88 грн |
| SS12-E3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
на замовлення 678 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 63+ | 7.14 грн |
| 84+ | 4.97 грн |
| 93+ | 4.48 грн |
| 106+ | 3.94 грн |
| SMBJ24A-E3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 2574 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 27.68 грн |
| 29+ | 14.59 грн |
| 31+ | 13.51 грн |
| 100+ | 9.78 грн |
| 250+ | 8.21 грн |
| 500+ | 7.30 грн |
| 750+ | 6.88 грн |
| 1500+ | 6.22 грн |
| 2250+ | 5.80 грн |
| SMBJ24A-E3/5B |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 3200 шт
В кошику
од. на суму грн.
| US1M-E3/5AT |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Leakage current: 50µA
на замовлення 497 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 26.79 грн |
| 25+ | 16.67 грн |
| 31+ | 13.40 грн |
| 100+ | 9.63 грн |
| US1M-E3/61T |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Capacitance: 10pF
на замовлення 7137 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 20.54 грн |
| 29+ | 14.59 грн |
| 33+ | 12.93 грн |
| 50+ | 10.20 грн |
| 100+ | 9.53 грн |
| 500+ | 8.13 грн |
| 1000+ | 7.05 грн |
| 1800+ | 6.22 грн |
| 3600+ | 5.39 грн |
| US1MHE3_A/H |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
Leakage current: 50µA
на замовлення 739 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 24.11 грн |
| 25+ | 17.16 грн |
| 100+ | 12.93 грн |
| 500+ | 12.19 грн |
| IRFZ44PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 809 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 136.61 грн |
| 5+ | 104.47 грн |
| 10+ | 94.52 грн |
| 25+ | 82.91 грн |
| 50+ | 76.28 грн |
| 100+ | 69.65 грн |
| 500+ | 58.04 грн |
| MBR1645-E3/45 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
на замовлення 1200 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 60.72 грн |
| 50+ | 28.85 грн |
| UF5408-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 75ns
Quantity in set/package: 1400pcs.
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 75ns
Quantity in set/package: 1400pcs.
Features of semiconductor devices: ultrafast switching
на замовлення 536 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 34.82 грн |
| 17+ | 25.87 грн |
| 100+ | 21.47 грн |
| 500+ | 19.15 грн |
| BZX55C15-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: THT
Tolerance: ±5%
Case: DO35
Kind of package: Ammo Pack
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: THT
Tolerance: ±5%
Case: DO35
Kind of package: Ammo Pack
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| BZX55C15-TR |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 14 inch reel; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: 14 inch reel
Case: DO35
Mounting: THT
Tolerance: ±6%
Semiconductor structure: single diode
Quantity in set/package: 10000pcs.
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 14 inch reel; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: 14 inch reel
Case: DO35
Mounting: THT
Tolerance: ±6%
Semiconductor structure: single diode
Quantity in set/package: 10000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| DG390BDJ-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 2; DIP16; -15÷15V; tube
Type of integrated circuit: analog switch
Output configuration: SPDT
Number of channels: 2
Case: DIP16
Supply voltage: -15...15V
Mounting: THT
Kind of package: tube
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 2; DIP16; -15÷15V; tube
Type of integrated circuit: analog switch
Output configuration: SPDT
Number of channels: 2
Case: DIP16
Supply voltage: -15...15V
Mounting: THT
Kind of package: tube
на замовлення 67 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 414.30 грн |
| 5+ | 339.94 грн |
| 25+ | 305.95 грн |
| 1N4148W-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: 7 inch reel
Max. forward impulse current: 0.5A
Case: SOD123
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Quantity in set/package: 3000pcs.
Capacitance: 1.5pF
Leakage current: 0.1mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: 7 inch reel
Max. forward impulse current: 0.5A
Case: SOD123
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Quantity in set/package: 3000pcs.
Capacitance: 1.5pF
Leakage current: 0.1mA
на замовлення 45008 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 63+ | 7.14 грн |
| 91+ | 4.56 грн |
| 120+ | 3.48 грн |
| 131+ | 3.17 грн |
| 250+ | 2.29 грн |
| 500+ | 1.92 грн |
| 1000+ | 1.73 грн |
| 3000+ | 1.48 грн |
| 1N4148WS-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: 7 inch reel
Max. forward impulse current: 0.35A
Case: SOD323
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Quantity in set/package: 3000pcs.
Capacitance: 4pF
Leakage current: 0.1mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: 7 inch reel
Max. forward impulse current: 0.35A
Case: SOD323
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Quantity in set/package: 3000pcs.
Capacitance: 4pF
Leakage current: 0.1mA
на замовлення 18765 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 36+ | 12.50 грн |
| 54+ | 7.71 грн |
| 79+ | 5.31 грн |
| 100+ | 4.36 грн |
| 500+ | 2.66 грн |
| 1000+ | 2.51 грн |
| 3000+ | 2.27 грн |
| 6000+ | 2.15 грн |
| 9000+ | 2.09 грн |
| 1N4148WS-G3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: 7 inch reel
Max. forward impulse current: 0.35A
Case: SOD323
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Quantity in set/package: 3000pcs.
Capacitance: 4pF
Leakage current: 0.1mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: 7 inch reel
Max. forward impulse current: 0.35A
Case: SOD323
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Quantity in set/package: 3000pcs.
Capacitance: 4pF
Leakage current: 0.1mA
на замовлення 2616 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 36+ | 12.50 грн |
| 61+ | 6.88 грн |
| 100+ | 4.29 грн |
| 500+ | 3.20 грн |
| 1000+ | 2.94 грн |


































