| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SMCJ64A-E3/9AT | VISHAY |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 14.6A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | |||||||||||||||
| SMCJ64A-M3/57T | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 14.6A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 4250 шт В кошику од. на суму грн. | |||||||||||||||
| SMCJ64AHE3_A/I | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 14.6A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Technology: TransZorb® Application: automotive industry Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | |||||||||||||||
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MAL214655222E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 2.2mF; 16VDC; Ø12.5x25mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 2.2mF Operating voltage: 16V DC Body dimensions: Ø12.5x25mm Tolerance: ±20% Operating temperature: -40...125°C Height: 25mm Diameter: 12.5mm Terminal pitch: 5mm Service life: 5000h |
на замовлення 165 шт: термін постачання 14-30 дні (днів) |
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MAL213815222E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 2.2mF; 16VDC; Ø15x30mm; ±20% Tolerance: ±20% Diameter: 15mm Mounting: THT Kind of capacitor: low ESR Service life: 10000h Operating temperature: -40...105°C Leads: axial Body dimensions: Ø15x30mm Type of capacitor: electrolytic Capacitance: 2.2mF Height: 30mm Operating voltage: 16V DC |
на замовлення 19 шт: термін постачання 14-30 дні (днів) |
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MAL202125222E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 2.2mF; 16VDC; Ø12.5x30mm; ±20%; 8000h Type of capacitor: electrolytic Mounting: THT Capacitance: 2.2mF Operating voltage: 16V DC Body dimensions: Ø12.5x30mm Tolerance: ±20% Operating temperature: -40...85°C Height: 30mm Diameter: 12.5mm Manufacturer series: MAL2021 Service life: 8000h Leads: axial |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||
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MAL204865222E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 2.2mF; 16VDC; Ø12.5x25mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 2.2mF Operating voltage: 16V DC Body dimensions: Ø12.5x25mm Terminal pitch: 5mm Tolerance: ±20% Service life: 3000h Operating temperature: -40...105°C Height: 25mm Diameter: 12.5mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MCS0402MC1102FE000 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 11kΩ; SMD; 130mW; ±1%; 50V; 1x0.5x0.32mm Type of resistor: thin film Resistance: 11kΩ Mounting: SMD Power: 130mW Tolerance: ±1% Operating voltage: 50V Operating temperature: -55...175°C Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm Quantity in set/package: 10000pcs. Body dimensions: 1x0.5x0.32mm |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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293D335X9025B2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 3.3uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 3.3µF Operating voltage: 25V DC Mounting: SMD Case: B Case - inch: 1411 Case - mm: 3528 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMB150CA-E3/52 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 2.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMB150CA-E3/52 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 2.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Manufacturer series: P6SMB Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 195 шт: термін постачання 14-30 дні (днів) |
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P6SMB150CA-E3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 2.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 13 inch reel; tape Manufacturer series: P6SMB Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMB150CA-M3/52 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 2.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Manufacturer series: P6SMB Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMB150CA-M3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 2.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 13 inch reel; tape Manufacturer series: P6SMB Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMB150CAHM3_B/I | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 143V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 143V Max. forward impulse current: 2.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 13 inch reel; tape Manufacturer series: P6SMB Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 6400 шт В кошику од. на суму грн. | ||||||||||||||
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1N4743A-TR | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 13V; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 13V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
Мінімальне замовлення: 25000 шт В кошику од. на суму грн. | ||||||||||||||
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IRFB11N50APBF-BE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 170W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: THT Gate charge: 52nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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SIHFS11N50A-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7A; Idm: 44A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7A Pulsed drain current: 44A Power dissipation: 170W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: SMD Gate charge: 52nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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1N4745A-TR | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 16V; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 16V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
товару немає в наявності |
Мінімальне замовлення: 25000 шт В кошику од. на суму грн. | ||||||||||||||
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CRCW0603143KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 143kΩ; SMD; 0603; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 143kΩ Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.1W Tolerance: ±1% Operating temperature: -55...155°C Operating voltage: 75V Quantity in set/package: 5000pcs. Body dimensions: 1.55x0.85x0.45mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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BAV203-GS18 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 250mA; 50ns; QuadroMELF,SOD80; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Case: QuadroMELF; SOD80 Max. forward voltage: 1V Max. forward impulse current: 1A |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
| D2TO020CR2200FTE3 | VISHAY |
Category: Power resistors Description: Resistor: thick film; 220mΩ; SMD; TO263; 25W; ±1%; 500V; -55÷155°C Power: 25W Case: TO263 Conform to the norm: AEC-Q200 Operating voltage: 500V Tolerance: ±1% Type of resistor: thick film Mounting: SMD Operating temperature: -55...155°C Resistance: 0.22Ω |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||||||||||||
| 5KP58A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 5kW; 64.4V; 53.4A; unidirectional; P600; TransZorb®; 5KP Mounting: THT Case: P600 Type of diode: TVS Breakdown voltage: 64.4V Manufacturer series: 5KP Max. forward impulse current: 53.4A Peak pulse power dissipation: 5kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 58V Kind of package: 13 inch reel Semiconductor structure: unidirectional Leakage current: 2µA |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||
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P6SMB47A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 47V; 9.3A; unidirectional; ±5%; DO214AA,SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40.2V Breakdown voltage: 47V Max. forward impulse current: 9.3A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 13 inch reel; tape Tolerance: ±5% Manufacturer series: P6SMB Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMB47A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 47V; 9.3A; unidirectional; ±5%; DO214AA,SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40.2V Breakdown voltage: 47V Max. forward impulse current: 9.3A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Tolerance: ±5% Manufacturer series: P6SMB Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMB47A-M3/52 | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 47V; 9.3A; unidirectional; ±5%; DO214AA,SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40.2V Breakdown voltage: 47V Max. forward impulse current: 9.3A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Tolerance: ±5% Manufacturer series: P6SMB Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMB47A-M3/5B | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 47V; 9.3A; unidirectional; ±5%; DO214AA,SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40.2V Breakdown voltage: 47V Max. forward impulse current: 9.3A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 13 inch reel; tape Tolerance: ±5% Manufacturer series: P6SMB Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMB47CA-E3/52 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 47V; 9.3A; bidirectional; ±5%; DO214AA,SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40.2V Breakdown voltage: 47V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Tolerance: ±5% Manufacturer series: P6SMB Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMB47CA-E3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 47V; 9.3A; bidirectional; ±5%; DO214AA,SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40.2V Breakdown voltage: 47V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 13 inch reel; tape Tolerance: ±5% Manufacturer series: P6SMB Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMB47CA-M3/52 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 47V; 9.3A; bidirectional; ±5%; DO214AA,SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40.2V Breakdown voltage: 47V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Tolerance: ±5% Manufacturer series: P6SMB Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMB47CA-M3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 47V; 9.3A; bidirectional; ±5%; DO214AA,SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40.2V Breakdown voltage: 47V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 13 inch reel; tape Tolerance: ±5% Manufacturer series: P6SMB Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||
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CRCW0402560RFKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 560Ω; SMD; 0402; 62.5mW; ±1%; 50V; -55÷155°C Case - mm: 1005 Tolerance: ±1% Type of resistor: thick film Mounting: SMD Operating temperature: -55...155°C Resistance: 560Ω Power: 62.5mW Temperature coefficient: 100ppm/°C Operating voltage: 50V Case - inch: 0402 |
на замовлення 600 шт: термін постачання 14-30 дні (днів) |
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BZX55C6V2-TR | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; DO35; single diode; BZX55C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX55C |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||
| BZX55C7V5-TR | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 7.5V; DO35; single diode; BZX55C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Mounting: THT Tolerance: ±5% Case: DO35 Semiconductor structure: single diode Manufacturer series: BZX55C |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | |||||||||||||||
| BZX55C8V2-TR | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode; BZX55C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX55C |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | |||||||||||||||
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P13LFL103MAB10 | VISHAY |
Category: Cermet single turn potentiometers Description: Potentiometer: shaft; 10kΩ; 1.5W; ±20%; THT; cermet; Ø14x10.5mm Type of potentiometer: shaft Resistance: 10kΩ Power: 1.5W Tolerance: ±20% Track material: cermet Operating temperature: -55...125°C Body dimensions: Ø14x10.5mm Temperature coefficient: 150ppm/°C Quantity in set/package: 10pcs. Mounting: THT |
на замовлення 14 шт: термін постачання 14-30 дні (днів) |
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VJ0402Y473KXJAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 47nF; 16V; X7R; ±10%; SMD; 0402 Type of capacitor: ceramic Capacitance: 47nF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
на замовлення 4946 шт: термін постачання 14-30 дні (днів) |
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RCA120661K9FHEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 61.9kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 61.9kΩ Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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RCA120661K9FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 61.9kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 61.9kΩ Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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CMB02070X1004GB700 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; 1MΩ; SMD; MELF; 0207; 1W; ±2%; 500V; -55÷125°C Length: 5.8mm Tolerance: ±2% Diameter: 2.2mm Type of resistor: carbon film Mounting: SMD Operating temperature: -55...125°C Resistance: 1MΩ Body dimensions: Ø2.2x5.8mm Power: 1W Roll diameter max.: 330mm Case: MELF Conform to the norm: AEC-Q200 Operating voltage: 500V Case - inch: 0207 Case - mm: 6123 |
товару немає в наявності |
Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||||||
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CMB02070X1020FB700 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; 102Ω; SMD; MELF; 0207; 1W; ±1%; 500V; L: 5.8mm Length: 5.8mm Tolerance: ±1% Diameter: 2.2mm Type of resistor: carbon film Mounting: SMD Operating temperature: -55...125°C Resistance: 102Ω Body dimensions: Ø2.2x5.8mm Power: 1W Roll diameter max.: 330mm Case: MELF Conform to the norm: AEC-Q200 Operating voltage: 500V Case - inch: 0207 Case - mm: 6123 |
товару немає в наявності |
Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||||||
| SIRA18DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 33A; Idm: 70A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 33A Pulsed drain current: 70A Power dissipation: 14.7W Case: PowerPAK® SO8 Gate-source voltage: -16...20V Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| SIRA18DDP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 17W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Pulsed drain current: 90A Power dissipation: 17W Case: PowerPAK® SO8 Gate-source voltage: -16...20V Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 6.83mΩ |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||
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MURS160-M3/52T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; DO214AA,SMB; Ufmax: 1.25V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AA; SMB Max. forward voltage: 1.25V Max. forward impulse current: 35A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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MURS160HE3_A/I | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 50ns; DO214AA,SMB; Ufmax: 1.25V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AA; SMB Max. forward voltage: 1.25V Max. forward impulse current: 35A |
товару немає в наявності |
Мінімальне замовлення: 6400 шт В кошику од. на суму грн. | ||||||||||||||
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SI4056ADY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.3A Pulsed drain current: 40A Power dissipation: 5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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SMBJ26A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 28.9V; 14.3A; unidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 14.3A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||
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SMBJ26AHE3_B/H | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 28.9V; 14.3A; unidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 14.3A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: 7 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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MCT06030C4590DP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V Type of resistor: thin film Resistance: 459Ω Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.125W Tolerance: ±0.5% Manufacturer series: MCT0603 Version: 0 Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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MCT06030C4590DPW00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V Type of resistor: thin film Resistance: 459Ω Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.125W Tolerance: ±0.5% Manufacturer series: MCT0603 Version: 0 Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Roll diameter max.: 330mm |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||||||
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MCT06030D4590DP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V Type of resistor: thin film Resistance: 459Ω Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.125W Tolerance: ±0.5% Manufacturer series: MCT0603 Version: 0 Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C Roll diameter max.: 180mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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MCT06030D4590DPW00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V Type of resistor: thin film Resistance: 459Ω Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.125W Tolerance: ±0.5% Manufacturer series: MCT0603 Version: 0 Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C Roll diameter max.: 330mm |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||||||
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MCT0603MD4590DP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 459Ω; SMD; 0603; 0.21W; ±0.5%; MCT0603; M; 75V Type of resistor: thin film Resistance: 459Ω Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.21W Tolerance: ±0.5% Manufacturer series: MCT0603 Version: M Operating voltage: 75V Operating temperature: -55...175°C Temperature coefficient: 25ppm/°C Conform to the norm: AEC-Q200 Roll diameter max.: 180mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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MCT0603MD4590DPW00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 459Ω; SMD; 0603; 0.21W; ±0.5%; MCT0603; M; 75V Type of resistor: thin film Resistance: 459Ω Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.21W Tolerance: ±0.5% Manufacturer series: MCT0603 Version: M Operating voltage: 75V Operating temperature: -55...175°C Temperature coefficient: 25ppm/°C Conform to the norm: AEC-Q200 Roll diameter max.: 330mm |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||||||
| SI7149DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -70A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -50A Pulsed drain current: -70A Power dissipation: 44.4W Case: PowerPAK® SO8 Gate-source voltage: ±25V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 147nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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IRFR9220TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W Mounting: SMD Pulsed drain current: -14A Power dissipation: 42W Gate charge: 20nC Polarisation: unipolar Drain current: -2.3A Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 1.5Ω |
на замовлення 341 шт: термін постачання 14-30 дні (днів) |
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IRFR9220PBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
на замовлення 33 шт: термін постачання 14-30 дні (днів) |
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IRFR9220TRPBF-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 42W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.6A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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IRFR9220TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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IRFR9220TRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Pulsed drain current: -14A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| SMCJ64A-E3/9AT |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| SMCJ64A-M3/57T |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
товару немає в наявності
Мінімальне замовлення: 4250 шт
В кошику
од. на суму грн.
| SMCJ64AHE3_A/I |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Application: automotive industry
Kind of package: 13 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Application: automotive industry
Kind of package: 13 inch reel; tape
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| MAL214655222E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2.2mF; 16VDC; Ø12.5x25mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 16V DC
Body dimensions: Ø12.5x25mm
Tolerance: ±20%
Operating temperature: -40...125°C
Height: 25mm
Diameter: 12.5mm
Terminal pitch: 5mm
Service life: 5000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2.2mF; 16VDC; Ø12.5x25mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 16V DC
Body dimensions: Ø12.5x25mm
Tolerance: ±20%
Operating temperature: -40...125°C
Height: 25mm
Diameter: 12.5mm
Terminal pitch: 5mm
Service life: 5000h
на замовлення 165 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 209.67 грн |
| 10+ | 106.66 грн |
| 25+ | 94.81 грн |
| 100+ | 85.50 грн |
| MAL213815222E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 2.2mF; 16VDC; Ø15x30mm; ±20%
Tolerance: ±20%
Diameter: 15mm
Mounting: THT
Kind of capacitor: low ESR
Service life: 10000h
Operating temperature: -40...105°C
Leads: axial
Body dimensions: Ø15x30mm
Type of capacitor: electrolytic
Capacitance: 2.2mF
Height: 30mm
Operating voltage: 16V DC
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 2.2mF; 16VDC; Ø15x30mm; ±20%
Tolerance: ±20%
Diameter: 15mm
Mounting: THT
Kind of capacitor: low ESR
Service life: 10000h
Operating temperature: -40...105°C
Leads: axial
Body dimensions: Ø15x30mm
Type of capacitor: electrolytic
Capacitance: 2.2mF
Height: 30mm
Operating voltage: 16V DC
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 299.01 грн |
| 10+ | 217.55 грн |
| MAL202125222E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2.2mF; 16VDC; Ø12.5x30mm; ±20%; 8000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 16V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Operating temperature: -40...85°C
Height: 30mm
Diameter: 12.5mm
Manufacturer series: MAL2021
Service life: 8000h
Leads: axial
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2.2mF; 16VDC; Ø12.5x30mm; ±20%; 8000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 16V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Operating temperature: -40...85°C
Height: 30mm
Diameter: 12.5mm
Manufacturer series: MAL2021
Service life: 8000h
Leads: axial
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| MAL204865222E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2.2mF; 16VDC; Ø12.5x25mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 16V DC
Body dimensions: Ø12.5x25mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...105°C
Height: 25mm
Diameter: 12.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2.2mF; 16VDC; Ø12.5x25mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 16V DC
Body dimensions: Ø12.5x25mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...105°C
Height: 25mm
Diameter: 12.5mm
товару немає в наявності
В кошику
од. на суму грн.
| MCS0402MC1102FE000 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 11kΩ; SMD; 130mW; ±1%; 50V; 1x0.5x0.32mm
Type of resistor: thin film
Resistance: 11kΩ
Mounting: SMD
Power: 130mW
Tolerance: ±1%
Operating voltage: 50V
Operating temperature: -55...175°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Quantity in set/package: 10000pcs.
Body dimensions: 1x0.5x0.32mm
Category: SMD resistors
Description: Resistor: thin film; 11kΩ; SMD; 130mW; ±1%; 50V; 1x0.5x0.32mm
Type of resistor: thin film
Resistance: 11kΩ
Mounting: SMD
Power: 130mW
Tolerance: ±1%
Operating voltage: 50V
Operating temperature: -55...175°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Quantity in set/package: 10000pcs.
Body dimensions: 1x0.5x0.32mm
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| 293D335X9025B2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 3.3uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 3.3µF
Operating voltage: 25V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 3.3uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 3.3µF
Operating voltage: 25V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| P6SMB150CA-E3/52 |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3 шт
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| P6SMB150CA-E3/52 |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.23 грн |
| 34+ | 12.70 грн |
| 100+ | 8.63 грн |
| P6SMB150CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3200 шт
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| P6SMB150CA-M3/52 |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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| P6SMB150CA-M3/5B |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3200 шт
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од. на суму грн.
| P6SMB150CAHM3_B/I |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 143V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 143V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 143V; 2.9A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 143V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
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Мінімальне замовлення: 6400 шт
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од. на суму грн.
| 1N4743A-TR |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 13V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 13V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
товару немає в наявності
Мінімальне замовлення: 25000 шт
В кошику
од. на суму грн.
| IRFB11N50APBF-BE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 170W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 170W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 52nC
Kind of channel: enhancement
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Мінімальне замовлення: 1000 шт
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| SIHFS11N50A-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; Idm: 44A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7A; Idm: 44A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
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Мінімальне замовлення: 1000 шт
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| 1N4745A-TR |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
товару немає в наявності
Мінімальне замовлення: 25000 шт
В кошику
од. на суму грн.
| CRCW0603143KFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 143kΩ; SMD; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 143kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Operating voltage: 75V
Quantity in set/package: 5000pcs.
Body dimensions: 1.55x0.85x0.45mm
Category: SMD resistors
Description: Resistor: thick film; 143kΩ; SMD; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 143kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Operating voltage: 75V
Quantity in set/package: 5000pcs.
Body dimensions: 1.55x0.85x0.45mm
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Мінімальне замовлення: 5000 шт
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| BAV203-GS18 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 250mA; 50ns; QuadroMELF,SOD80; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: QuadroMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 250mA; 50ns; QuadroMELF,SOD80; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: QuadroMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
товару немає в наявності
Мінімальне замовлення: 10000 шт
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од. на суму грн.
| D2TO020CR2200FTE3 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: thick film; 220mΩ; SMD; TO263; 25W; ±1%; 500V; -55÷155°C
Power: 25W
Case: TO263
Conform to the norm: AEC-Q200
Operating voltage: 500V
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 0.22Ω
Category: Power resistors
Description: Resistor: thick film; 220mΩ; SMD; TO263; 25W; ±1%; 500V; -55÷155°C
Power: 25W
Case: TO263
Conform to the norm: AEC-Q200
Operating voltage: 500V
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 0.22Ω
товару немає в наявності
Мінімальне замовлення: 50 шт
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| 5KP58A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 64.4V; 53.4A; unidirectional; P600; TransZorb®; 5KP
Mounting: THT
Case: P600
Type of diode: TVS
Breakdown voltage: 64.4V
Manufacturer series: 5KP
Max. forward impulse current: 53.4A
Peak pulse power dissipation: 5kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 58V
Kind of package: 13 inch reel
Semiconductor structure: unidirectional
Leakage current: 2µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 64.4V; 53.4A; unidirectional; P600; TransZorb®; 5KP
Mounting: THT
Case: P600
Type of diode: TVS
Breakdown voltage: 64.4V
Manufacturer series: 5KP
Max. forward impulse current: 53.4A
Peak pulse power dissipation: 5kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 58V
Kind of package: 13 inch reel
Semiconductor structure: unidirectional
Leakage current: 2µA
товару немає в наявності
Мінімальне замовлення: 800 шт
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| P6SMB47A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; unidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; unidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 3200 шт
В кошику
од. на суму грн.
| P6SMB47A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; unidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; unidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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| P6SMB47A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; unidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; unidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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| P6SMB47A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; unidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; unidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 3200 шт
В кошику
од. на суму грн.
| P6SMB47CA-E3/52 |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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| P6SMB47CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3200 шт
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| P6SMB47CA-M3/52 |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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| P6SMB47CA-M3/5B |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 47V; 9.3A; bidirectional; ±5%; DO214AA,SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Tolerance: ±5%
Manufacturer series: P6SMB
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3200 шт
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| CRCW0402560RFKTDBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 560Ω; SMD; 0402; 62.5mW; ±1%; 50V; -55÷155°C
Case - mm: 1005
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 560Ω
Power: 62.5mW
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - inch: 0402
Category: SMD resistors
Description: Resistor: thick film; 560Ω; SMD; 0402; 62.5mW; ±1%; 50V; -55÷155°C
Case - mm: 1005
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 560Ω
Power: 62.5mW
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - inch: 0402
на замовлення 600 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 400+ | 1.16 грн |
| BZX55C6V2-TR |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; DO35; single diode; BZX55C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX55C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; DO35; single diode; BZX55C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX55C
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Мінімальне замовлення: 30000 шт
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| BZX55C7V5-TR |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; DO35; single diode; BZX55C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: THT
Tolerance: ±5%
Case: DO35
Semiconductor structure: single diode
Manufacturer series: BZX55C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; DO35; single diode; BZX55C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: THT
Tolerance: ±5%
Case: DO35
Semiconductor structure: single diode
Manufacturer series: BZX55C
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Мінімальне замовлення: 30000 шт
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| BZX55C8V2-TR |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode; BZX55C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX55C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode; BZX55C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX55C
товару немає в наявності
Мінімальне замовлення: 30000 шт
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| P13LFL103MAB10 |
|
Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; 10kΩ; 1.5W; ±20%; THT; cermet; Ø14x10.5mm
Type of potentiometer: shaft
Resistance: 10kΩ
Power: 1.5W
Tolerance: ±20%
Track material: cermet
Operating temperature: -55...125°C
Body dimensions: Ø14x10.5mm
Temperature coefficient: 150ppm/°C
Quantity in set/package: 10pcs.
Mounting: THT
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; 10kΩ; 1.5W; ±20%; THT; cermet; Ø14x10.5mm
Type of potentiometer: shaft
Resistance: 10kΩ
Power: 1.5W
Tolerance: ±20%
Track material: cermet
Operating temperature: -55...125°C
Body dimensions: Ø14x10.5mm
Temperature coefficient: 150ppm/°C
Quantity in set/package: 10pcs.
Mounting: THT
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2129.56 грн |
| 5+ | 1803.07 грн |
| 10+ | 1698.95 грн |
| VJ0402Y473KXJAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 47nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 47nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 47nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 47nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
на замовлення 4946 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.41 грн |
| 46+ | 9.31 грн |
| 100+ | 5.59 грн |
| 1000+ | 3.73 грн |
| RCA120661K9FHEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 61.9kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 61.9kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 61.9kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 61.9kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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Мінімальне замовлення: 5000 шт
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| RCA120661K9FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 61.9kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 61.9kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 61.9kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 61.9kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| CMB02070X1004GB700 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; 1MΩ; SMD; MELF; 0207; 1W; ±2%; 500V; -55÷125°C
Length: 5.8mm
Tolerance: ±2%
Diameter: 2.2mm
Type of resistor: carbon film
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 1MΩ
Body dimensions: Ø2.2x5.8mm
Power: 1W
Roll diameter max.: 330mm
Case: MELF
Conform to the norm: AEC-Q200
Operating voltage: 500V
Case - inch: 0207
Case - mm: 6123
Category: SMD resistors
Description: Resistor: carbon film; 1MΩ; SMD; MELF; 0207; 1W; ±2%; 500V; -55÷125°C
Length: 5.8mm
Tolerance: ±2%
Diameter: 2.2mm
Type of resistor: carbon film
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 1MΩ
Body dimensions: Ø2.2x5.8mm
Power: 1W
Roll diameter max.: 330mm
Case: MELF
Conform to the norm: AEC-Q200
Operating voltage: 500V
Case - inch: 0207
Case - mm: 6123
товару немає в наявності
Мінімальне замовлення: 7000 шт
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| CMB02070X1020FB700 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; 102Ω; SMD; MELF; 0207; 1W; ±1%; 500V; L: 5.8mm
Length: 5.8mm
Tolerance: ±1%
Diameter: 2.2mm
Type of resistor: carbon film
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 102Ω
Body dimensions: Ø2.2x5.8mm
Power: 1W
Roll diameter max.: 330mm
Case: MELF
Conform to the norm: AEC-Q200
Operating voltage: 500V
Case - inch: 0207
Case - mm: 6123
Category: SMD resistors
Description: Resistor: carbon film; 102Ω; SMD; MELF; 0207; 1W; ±1%; 500V; L: 5.8mm
Length: 5.8mm
Tolerance: ±1%
Diameter: 2.2mm
Type of resistor: carbon film
Mounting: SMD
Operating temperature: -55...125°C
Resistance: 102Ω
Body dimensions: Ø2.2x5.8mm
Power: 1W
Roll diameter max.: 330mm
Case: MELF
Conform to the norm: AEC-Q200
Operating voltage: 500V
Case - inch: 0207
Case - mm: 6123
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Мінімальне замовлення: 7000 шт
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од. на суму грн.
| SIRA18DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 33A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Pulsed drain current: 70A
Power dissipation: 14.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 33A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Pulsed drain current: 70A
Power dissipation: 14.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| SIRA18DDP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 17W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 90A
Power dissipation: 17W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 6.83mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 17W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 90A
Power dissipation: 17W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 6.83mΩ
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
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| MURS160-M3/52T |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; DO214AA,SMB; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; DO214AA,SMB; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MURS160HE3_A/I |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; DO214AA,SMB; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 50ns; DO214AA,SMB; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AA; SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
товару немає в наявності
Мінімальне замовлення: 6400 шт
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| SI4056ADY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Pulsed drain current: 40A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.3A; Idm: 40A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Pulsed drain current: 40A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SMBJ26A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9V; 14.3A; unidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9V; 14.3A; unidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 3200 шт
В кошику
од. на суму грн.
| SMBJ26AHE3_B/H |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9V; 14.3A; unidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 7 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9V; 14.3A; unidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 7 inch reel; tape
товару немає в наявності
Мінімальне замовлення: 7500 шт
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| MCT06030C4590DP500 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| MCT06030C4590DPW00 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 330mm
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 330mm
товару немає в наявності
Мінімальне замовлення: 20000 шт
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| MCT06030D4590DP500 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Roll diameter max.: 180mm
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| MCT06030D4590DPW00 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Roll diameter max.: 330mm
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Roll diameter max.: 330mm
товару немає в наявності
Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| MCT0603MD4590DP500 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.21W; ±0.5%; MCT0603; M; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.21W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: M
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 25ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.21W; ±0.5%; MCT0603; M; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.21W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: M
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 25ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| MCT0603MD4590DPW00 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.21W; ±0.5%; MCT0603; M; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.21W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: M
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 25ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 330mm
Category: SMD resistors
Description: Resistor: thin film; 459Ω; SMD; 0603; 0.21W; ±0.5%; MCT0603; M; 75V
Type of resistor: thin film
Resistance: 459Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.21W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: M
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 25ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 330mm
товару немає в наявності
Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| SI7149DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -70A
Power dissipation: 44.4W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -70A
Power dissipation: 44.4W
Case: PowerPAK® SO8
Gate-source voltage: ±25V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IRFR9220TRPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Mounting: SMD
Pulsed drain current: -14A
Power dissipation: 42W
Gate charge: 20nC
Polarisation: unipolar
Drain current: -2.3A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 1.5Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Mounting: SMD
Pulsed drain current: -14A
Power dissipation: 42W
Gate charge: 20nC
Polarisation: unipolar
Drain current: -2.3A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 1.5Ω
на замовлення 341 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 138.57 грн |
| 5+ | 99.55 грн |
| 10+ | 86.85 грн |
| 50+ | 64.33 грн |
| 100+ | 57.56 грн |
| 125+ | 55.62 грн |
| 250+ | 50.37 грн |
| IRFR9220PBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 158.62 грн |
| 10+ | 75.85 грн |
| IRFR9220TRPBF-BE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IRFR9220TRLPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IRFR9220TRRPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; Idm: -14A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Pulsed drain current: -14A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.