Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (71660) > Сторінка 1174 з 1195
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DF10M | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM Max. off-state voltage: 1kV Case: DFM Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Electrical mounting: THT Kind of package: tube Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 50A |
на замовлення 627 шт: термін постачання 14-30 дні (днів) |
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ZXTR2005Z-13 | DIODES INCORPORATED |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 38mA Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±10% Number of channels: 1 Input voltage: 10...100V |
на замовлення 139 шт: термін постачання 14-30 дні (днів) |
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| DDTA114WE-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ Case: SOT523 Mounting: SMD Type of transistor: PNP Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.15W Current gain: 24 Collector-emitter voltage: 50V Quantity in set/package: 3000pcs. Base-emitter resistor: 4.7kΩ Base resistor: 10kΩ Frequency: 250MHz Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DDTC114WCA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ Case: SOT23 Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.2W Current gain: 24 Collector-emitter voltage: 50V Quantity in set/package: 3000pcs. Base-emitter resistor: 4.7kΩ Base resistor: 10kΩ Frequency: 250MHz Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ZXMS6006DGQTA | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 2.8A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.8A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 Kind of package: reel; tape Supply voltage: 0...5.5V DC Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ADC124EUQ-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 22kΩ Mounting: SMD Collector-emitter voltage: 50V Current gain: 56 Quantity in set/package: 10000pcs. Base resistor: 22kΩ Base-emitter resistor: 22kΩ Frequency: 250MHz Application: automotive industry Polarisation: bipolar Kind of transistor: BRT Case: SOT363 Type of transistor: NPN x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.27W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ADC124EUQ-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 22kΩ Mounting: SMD Collector-emitter voltage: 50V Current gain: 56 Quantity in set/package: 3000pcs. Base resistor: 22kΩ Base-emitter resistor: 22kΩ Frequency: 250MHz Application: automotive industry Polarisation: bipolar Kind of transistor: BRT Case: SOT363 Type of transistor: NPN x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.27W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PAM8904JPR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.8÷5.5VDC Operating temperature: -40...150°C Mounting: SMD Number of channels: 1 Voltage supply range: 1.8...5.5V DC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: UQFN12 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PAM8906M1018-13 | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; MSOP10; Ch: 1; 2.1÷5.5VDC Case: MSOP10 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Voltage supply range: 2.1...5.5V DC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PAM8907SB10-7 | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; UQFN10; Ch: 1; 1.8÷5.5VDC Operating temperature: -40...150°C Mounting: SMD Number of channels: 1 Voltage supply range: 1.8...5.5V DC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: UQFN10 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PAM8904EGPR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; WQFN12; Ch: 1; 1.5÷5.5VDC Operating temperature: -40...150°C Mounting: SMD Number of channels: 1 Voltage supply range: 1.5...5.5V DC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: WQFN12 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PAM8904EJER | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; UQFN16; Ch: 1; 1.5÷5.5VDC Operating temperature: -40...150°C Mounting: SMD Number of channels: 1 Voltage supply range: 1.5...5.5V DC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: UQFN16 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PAM8906M1010-13 | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; MSOP10; Ch: 1; 2.1÷5.5VDC Case: MSOP10 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Voltage supply range: 2.1...5.5V DC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PAM8904EJPR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: UQFN12 Number of channels: 1 Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Voltage supply range: 1.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PAM8904JER | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: UQFN16 Number of channels: 1 Mounting: SMD Kind of package: reel; tape Voltage supply range: 2.3...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PAM8904QJER | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5VDC Operating temperature: -40...150°C Mounting: SMD Number of channels: 1 Voltage supply range: 2.3...5V DC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder Case: UQFN16 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PAM8906M1012-13 | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC Case: MSOP10 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Voltage supply range: 2.1...5.5V DC Type of integrated circuit: driver Kind of integrated circuit: piezo sounder |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GBJ2508-F | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 25A Max. forward impulse current: 350A Electrical mounting: THT Version: flat Leads: flat pin Case: GBJ Features of semiconductor devices: glass passivated Kind of package: tube |
на замовлення 39 шт: термін постачання 14-30 дні (днів) |
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GBJ2506-F | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 25A Max. forward impulse current: 350A Version: flat Case: GBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
на замовлення 125 шт: термін постачання 14-30 дні (днів) |
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GBJ2502-F | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 25A Max. forward impulse current: 350A Electrical mounting: THT Version: flat Leads: flat pin Case: GBJ Features of semiconductor devices: glass passivated Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBJ2504-F | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 25A Max. forward impulse current: 350A Electrical mounting: THT Version: flat Leads: flat pin Case: GBJ Features of semiconductor devices: glass passivated Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DF08S-T | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 50A Case: DFS Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: SMT |
на замовлення 1370 шт: термін постачання 14-30 дні (днів) |
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FZT855TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 150V; 5A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 5A Power dissipation: 3W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 90MHz |
на замовлення 482 шт: термін постачання 14-30 дні (днів) |
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SMBJ14A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.9V Max. forward impulse current: 25.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1861 шт: термін постачання 14-30 дні (днів) |
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| SMBJ14AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.9V Max. forward impulse current: 25.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DMJT9435-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 3A; 1.2W; SOT223 Type of transistor: PNP Polarisation: bipolar Power dissipation: 1.2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 30V Collector current: 3A Quantity in set/package: 2500pcs. Pulsed collector current: 6A Frequency: 160MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMCJ12A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ12A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...15.3V Max. forward impulse current: 30.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 3377 шт: термін постачання 14-30 дні (днів) |
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SMCJ28A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 33A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 5898 шт: термін постачання 14-30 дні (днів) |
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| 3.0SMCJ28A-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 31.1÷34.4V; 66.1A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 66.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DDTA123JCA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SOT23 Collector current: 0.1A Power dissipation: 0.2W Quantity in set/package: 3000pcs. Current gain: 80 Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
на замовлення 669 шт: термін постачання 14-30 дні (днів) |
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| DDA123JU-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ Mounting: SMD Kind of transistor: BRT Type of transistor: PNP x2 Case: SOT363 Collector current: 0.1A Power dissipation: 0.2W Quantity in set/package: 3000pcs. Current gain: 80 Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DDA123JH-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 2.2kΩ Mounting: SMD Kind of transistor: BRT Type of transistor: PNP x2 Case: SOT563 Collector current: 0.1A Power dissipation: 0.15W Quantity in set/package: 3000pcs. Current gain: 80 Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMAJ54A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 4.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2879 шт: термін постачання 14-30 дні (днів) |
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SMAJ51A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 691 шт: термін постачання 14-30 дні (днів) |
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SMAJ51CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Max. forward impulse current: 4.9A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 65 шт: термін постачання 14-30 дні (днів) |
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SMAJ54CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 4.6A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AZ23C5V6-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
на замовлення 927 шт: термін постачання 14-30 дні (днів) |
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BZT52C5V6S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.6V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 233 шт: термін постачання 14-30 дні (днів) |
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BZT52C5V6-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 5.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 5.6V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 4623 шт: термін постачання 14-30 дні (днів) |
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BZT52C5V6Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 5.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 5.6V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
на замовлення 5936 шт: термін постачання 14-30 дні (днів) |
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BZT52C5V6T-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
на замовлення 1031 шт: термін постачання 14-30 дні (днів) |
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ZXMHC10A07N8TC | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 0.9/-0.7A Power dissipation: 0.87W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.9/1.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge |
на замовлення 2053 шт: термін постачання 14-30 дні (днів) |
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DMHC4035LSDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 3.5/-2.9A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 58/100mΩ Mounting: SMD Gate charge: 12.5/11.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXMHC6A07N8TC | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 1.8/-1.4A Power dissipation: 1.36W Case: SO8 Gate-source voltage: ±20V On-state resistance: 250/400mΩ Mounting: SMD Gate charge: 3.2/5.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| ZXMHC3A01N8TC | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 2.7/-2.1A Power dissipation: 1.36W Case: SO8 Gate-source voltage: ±20V On-state resistance: 125/210mΩ Mounting: SMD Gate charge: 3.9/5.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
ZXMHC3F381N8TC | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 3.98/-3.36A Power dissipation: 0.87W Case: SO8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge Pulsed drain current: 22.9...-19.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DSS3540M-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 500mA; X1-DFN1006-3 Mounting: SMD Collector current: 0.5A Polarisation: bipolar Collector-emitter voltage: 40V Current gain: 40...200 Quantity in set/package: 3000pcs. Frequency: 100MHz Type of transistor: PNP Case: X1-DFN1006-3 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DSS3515M-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3 Mounting: SMD Power dissipation: 1W Collector current: 0.5A Pulsed collector current: 1A Polarisation: bipolar Collector-emitter voltage: 15V Current gain: 90...200 Quantity in set/package: 3000pcs. Frequency: 100...340MHz Type of transistor: PNP Case: X1-DFN1006-3 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DSS3515M-7B | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3 Mounting: SMD Power dissipation: 1W Collector current: 0.5A Pulsed collector current: 1A Polarisation: bipolar Collector-emitter voltage: 15V Current gain: 90...200 Quantity in set/package: 10000pcs. Frequency: 100...340MHz Type of transistor: PNP Case: X1-DFN1006-3 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DSS3540M-7B | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3 Mounting: SMD Power dissipation: 1W Collector current: 0.5A Pulsed collector current: 1A Polarisation: bipolar Collector-emitter voltage: 40V Current gain: 40...200 Quantity in set/package: 10000pcs. Frequency: 100MHz Type of transistor: PNP Case: X1-DFN1006-3 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AH49EZ3-G1 | DIODES INCORPORATED |
Category: Hall SensorsDescription: Sensor: Hall; TO92S; THT; Temp: -40÷85°C Type of sensor: Hall Case: TO92S Mounting: THT Operating temperature: -40...85°C |
на замовлення 60000 шт: термін постачання 14-30 дні (днів) |
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| AH1751-PG-B-A | DIODES INCORPORATED |
Category: Hall SensorsDescription: Sensor: Hall; latch; SIP3; THT; Temp: -40÷125°C Type of sensor: Hall Kind of sensor: latch Case: SIP3 Mounting: THT Operating temperature: -40...125°C |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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| AH175-WG-7-A | DIODES INCORPORATED |
Category: Hall SensorsDescription: Sensor: Hall; latch; SC59; SMT; Temp: -40÷150°C Type of sensor: Hall Kind of sensor: latch Case: SC59 Mounting: SMT Operating temperature: -40...150°C |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| AH175-PG-A-A | DIODES INCORPORATED |
Category: Hall SensorsDescription: Sensor: Hall; latch; SIP3; THT; Temp: -40÷150°C Type of sensor: Hall Kind of sensor: latch Case: SIP3 Mounting: THT Operating temperature: -40...150°C |
на замовлення 4000 шт: термін постачання 14-30 дні (днів) |
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| AH175-PG-A-B | DIODES INCORPORATED |
Category: Hall SensorsDescription: Sensor: Hall; latch; SIP3; THT; Temp: -40÷150°C Type of sensor: Hall Kind of sensor: latch Case: SIP3 Mounting: THT Operating temperature: -40...150°C |
на замовлення 4000 шт: термін постачання 14-30 дні (днів) |
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| AH175-PG-B-B | DIODES INCORPORATED |
Category: Hall SensorsDescription: Sensor: Hall; latch; SIP3; THT; Temp: -40÷150°C Type of sensor: Hall Kind of sensor: latch Case: SIP3 Mounting: THT Operating temperature: -40...150°C |
на замовлення 710 шт: термін постачання 14-30 дні (днів) |
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|
ZTX853 | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 1.2W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 130MHz Quantity in set/package: 4000pcs. |
на замовлення 3560 шт: термін постачання 14-30 дні (днів) |
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| ZTX853STZ | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 1.2W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 130MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 74LVC374AT20-13 | DIODES INCORPORATED |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; IN: 1; CMOS; SMD; TSSOP20; LVC Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -40...150°C Family: LVC Kind of output: 3-state Supply voltage: 1.65...3.6V DC Kind of input: with Schmitt trigger Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| DF10M |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM
Max. off-state voltage: 1kV
Case: DFM
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Kind of package: tube
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM
Max. off-state voltage: 1kV
Case: DFM
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Kind of package: tube
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
на замовлення 627 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.19 грн |
| 17+ | 25.43 грн |
| 50+ | 19.05 грн |
| 100+ | 16.95 грн |
| 250+ | 14.60 грн |
| 500+ | 13.18 грн |
| ZXTR2005Z-13 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 38mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 10...100V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 38mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 10...100V
на замовлення 139 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.11 грн |
| 21+ | 20.31 грн |
| 24+ | 18.04 грн |
| 28+ | 15.53 грн |
| 100+ | 13.01 грн |
| DDTA114WE-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Case: SOT523
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 24
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Base resistor: 10kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 10kΩ
Case: SOT523
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 24
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Base resistor: 10kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
товару немає в наявності
В кошику
од. на суму грн.
| DDTC114WCA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Case: SOT23
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 24
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Base resistor: 10kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Case: SOT23
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 24
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Base resistor: 10kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
товару немає в наявності
В кошику
од. на суму грн.
| ZXMS6006DGQTA |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.8A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.8A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
товару немає в наявності
В кошику
од. на суму грн.
| ADC124EUQ-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Current gain: 56
Quantity in set/package: 10000pcs.
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 250MHz
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT363
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.27W
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Current gain: 56
Quantity in set/package: 10000pcs.
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 250MHz
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT363
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.27W
товару немає в наявності
В кошику
од. на суму грн.
| ADC124EUQ-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Current gain: 56
Quantity in set/package: 3000pcs.
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 250MHz
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT363
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.27W
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Current gain: 56
Quantity in set/package: 3000pcs.
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 250MHz
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT363
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.27W
товару немає в наявності
В кошику
од. на суму грн.
| PAM8904JPR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.8÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMD
Number of channels: 1
Voltage supply range: 1.8...5.5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN12
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.8÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMD
Number of channels: 1
Voltage supply range: 1.8...5.5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN12
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PAM8906M1018-13 |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; Ch: 1; 2.1÷5.5VDC
Case: MSOP10
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Voltage supply range: 2.1...5.5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; Ch: 1; 2.1÷5.5VDC
Case: MSOP10
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Voltage supply range: 2.1...5.5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
товару немає в наявності
В кошику
од. на суму грн.
| PAM8907SB10-7 |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN10; Ch: 1; 1.8÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMD
Number of channels: 1
Voltage supply range: 1.8...5.5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN10
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN10; Ch: 1; 1.8÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMD
Number of channels: 1
Voltage supply range: 1.8...5.5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN10
Kind of package: reel; tape
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В кошику
од. на суму грн.
| PAM8904EGPR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; WQFN12; Ch: 1; 1.5÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMD
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: WQFN12
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; WQFN12; Ch: 1; 1.5÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMD
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: WQFN12
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PAM8904EJER |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 1.5÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMD
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN16
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 1.5÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMD
Number of channels: 1
Voltage supply range: 1.5...5.5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN16
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PAM8906M1010-13 |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; Ch: 1; 2.1÷5.5VDC
Case: MSOP10
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Voltage supply range: 2.1...5.5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; Ch: 1; 2.1÷5.5VDC
Case: MSOP10
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Voltage supply range: 2.1...5.5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
товару немає в наявності
В кошику
од. на суму грн.
| PAM8904EJPR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN12
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.5...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN12; Ch: 1; 1.5÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN12
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Voltage supply range: 1.5...5.5V DC
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В кошику
од. на суму грн.
| PAM8904JER |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN16
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Voltage supply range: 2.3...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN16
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Voltage supply range: 2.3...5.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| PAM8904QJER |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5VDC
Operating temperature: -40...150°C
Mounting: SMD
Number of channels: 1
Voltage supply range: 2.3...5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN16
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; Ch: 1; 2.3÷5VDC
Operating temperature: -40...150°C
Mounting: SMD
Number of channels: 1
Voltage supply range: 2.3...5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Case: UQFN16
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PAM8906M1012-13 |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC
Case: MSOP10
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Voltage supply range: 2.1...5.5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; MSOP10; 2.1÷5.5VDC
Case: MSOP10
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Voltage supply range: 2.1...5.5V DC
Type of integrated circuit: driver
Kind of integrated circuit: piezo sounder
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| GBJ2508-F |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
на замовлення 39 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.87 грн |
| 10+ | 114.98 грн |
| 15+ | 104.91 грн |
| 30+ | 88.12 грн |
| GBJ2506-F |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 125 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 110.27 грн |
| 10+ | 68.82 грн |
| 15+ | 63.78 грн |
| 45+ | 54.55 грн |
| 75+ | 50.36 грн |
| 105+ | 48.68 грн |
| GBJ2502-F |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
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| GBJ2504-F |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
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| DF08S-T |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
на замовлення 1370 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.10 грн |
| 12+ | 35.75 грн |
| 16+ | 26.77 грн |
| 25+ | 25.18 грн |
| 100+ | 13.43 грн |
| FZT855TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 90MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 90MHz
на замовлення 482 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.81 грн |
| 10+ | 57.41 грн |
| 50+ | 43.89 грн |
| 100+ | 39.03 грн |
| 200+ | 37.10 грн |
| SMBJ14A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1861 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.88 грн |
| 27+ | 15.61 грн |
| 32+ | 13.34 грн |
| 42+ | 10.07 грн |
| 100+ | 6.38 грн |
| SMBJ14AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| DMJT9435-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 30V
Collector current: 3A
Quantity in set/package: 2500pcs.
Pulsed collector current: 6A
Frequency: 160MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 30V
Collector current: 3A
Quantity in set/package: 2500pcs.
Pulsed collector current: 6A
Frequency: 160MHz
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| SMCJ12A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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од. на суму грн.
| SMBJ12A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3377 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.27 грн |
| 34+ | 12.59 грн |
| 40+ | 10.57 грн |
| 100+ | 5.96 грн |
| SMCJ28A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 5898 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.38 грн |
| 13+ | 33.74 грн |
| 15+ | 29.46 грн |
| 100+ | 17.79 грн |
| 500+ | 13.51 грн |
| 1000+ | 12.25 грн |
| 3000+ | 12.17 грн |
| 3.0SMCJ28A-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷34.4V; 66.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 66.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 31.1÷34.4V; 66.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 66.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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од. на суму грн.
| DDTA123JCA-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 669 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.65 грн |
| 54+ | 7.89 грн |
| 100+ | 4.58 грн |
| 500+ | 3.05 грн |
| DDA123JU-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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| DDA123JH-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP x2
Case: SOT563
Collector current: 0.1A
Power dissipation: 0.15W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP x2
Case: SOT563
Collector current: 0.1A
Power dissipation: 0.15W
Quantity in set/package: 3000pcs.
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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од. на суму грн.
| SMAJ54A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2879 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.17 грн |
| 39+ | 10.99 грн |
| 100+ | 5.39 грн |
| 1000+ | 4.22 грн |
| SMAJ51A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 691 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 18.08 грн |
| 30+ | 14.10 грн |
| 36+ | 11.75 грн |
| 100+ | 5.14 грн |
| SMAJ51CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 56.7÷62.7V; 4.9A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 65 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.88 грн |
| 27+ | 15.61 грн |
| 32+ | 13.43 грн |
| 50+ | 8.90 грн |
| SMAJ54CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| AZ23C5V6-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
на замовлення 927 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.23 грн |
| 74+ | 5.71 грн |
| 80+ | 5.29 грн |
| 95+ | 4.43 грн |
| 104+ | 4.06 грн |
| 500+ | 3.26 грн |
| BZT52C5V6S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 233 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.23 грн |
| 74+ | 5.71 грн |
| 85+ | 4.95 грн |
| 158+ | 2.66 грн |
| BZT52C5V6-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 4623 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.23 грн |
| 76+ | 5.54 грн |
| 90+ | 4.70 грн |
| 115+ | 3.65 грн |
| 224+ | 1.88 грн |
| 500+ | 1.38 грн |
| BZT52C5V6Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
на замовлення 5936 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.13 грн |
| 68+ | 6.21 грн |
| 77+ | 5.46 грн |
| 133+ | 3.16 грн |
| 500+ | 2.33 грн |
| 1000+ | 2.13 грн |
| 3000+ | 1.97 грн |
| BZT52C5V6T-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 1031 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.23 грн |
| 167+ | 2.52 грн |
| 186+ | 2.27 грн |
| 222+ | 1.90 грн |
| ZXMHC10A07N8TC |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
на замовлення 2053 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.73 грн |
| 10+ | 60.34 грн |
| 50+ | 51.03 грн |
| 100+ | 46.91 грн |
| 500+ | 44.65 грн |
| DMHC4035LSDQ-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| ZXMHC6A07N8TC |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.8/-1.4A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.8/-1.4A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
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| ZXMHC3A01N8TC |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.1A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 125/210mΩ
Mounting: SMD
Gate charge: 3.9/5.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.1A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 125/210mΩ
Mounting: SMD
Gate charge: 3.9/5.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| ZXMHC3F381N8TC |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
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| DSS3540M-7 |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 500mA; X1-DFN1006-3
Mounting: SMD
Collector current: 0.5A
Polarisation: bipolar
Collector-emitter voltage: 40V
Current gain: 40...200
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 500mA; X1-DFN1006-3
Mounting: SMD
Collector current: 0.5A
Polarisation: bipolar
Collector-emitter voltage: 40V
Current gain: 40...200
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
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| DSS3515M-7 |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Polarisation: bipolar
Collector-emitter voltage: 15V
Current gain: 90...200
Quantity in set/package: 3000pcs.
Frequency: 100...340MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Polarisation: bipolar
Collector-emitter voltage: 15V
Current gain: 90...200
Quantity in set/package: 3000pcs.
Frequency: 100...340MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
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| DSS3515M-7B |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Polarisation: bipolar
Collector-emitter voltage: 15V
Current gain: 90...200
Quantity in set/package: 10000pcs.
Frequency: 100...340MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Polarisation: bipolar
Collector-emitter voltage: 15V
Current gain: 90...200
Quantity in set/package: 10000pcs.
Frequency: 100...340MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
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| DSS3540M-7B |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Polarisation: bipolar
Collector-emitter voltage: 40V
Current gain: 40...200
Quantity in set/package: 10000pcs.
Frequency: 100MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Power dissipation: 1W
Collector current: 0.5A
Pulsed collector current: 1A
Polarisation: bipolar
Collector-emitter voltage: 40V
Current gain: 40...200
Quantity in set/package: 10000pcs.
Frequency: 100MHz
Type of transistor: PNP
Case: X1-DFN1006-3
Kind of package: reel; tape
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| AH49EZ3-G1 |
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Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; TO92S; THT; Temp: -40÷85°C
Type of sensor: Hall
Case: TO92S
Mounting: THT
Operating temperature: -40...85°C
Category: Hall Sensors
Description: Sensor: Hall; TO92S; THT; Temp: -40÷85°C
Type of sensor: Hall
Case: TO92S
Mounting: THT
Operating temperature: -40...85°C
на замовлення 60000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 20.16 грн |
| AH1751-PG-B-A |
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Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷125°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...125°C
Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷125°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...125°C
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 24.40 грн |
| AH175-WG-7-A |
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Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; SMT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Mounting: SMT
Operating temperature: -40...150°C
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; SMT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SC59
Mounting: SMT
Operating temperature: -40...150°C
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 26.12 грн |
| AH175-PG-A-A |
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Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...150°C
Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...150°C
на замовлення 4000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 23.23 грн |
| AH175-PG-A-B |
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Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...150°C
Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...150°C
на замовлення 4000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 28.29 грн |
| AH175-PG-B-B |
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Виробник: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...150°C
Category: Hall Sensors
Description: Sensor: Hall; latch; SIP3; THT; Temp: -40÷150°C
Type of sensor: Hall
Kind of sensor: latch
Case: SIP3
Mounting: THT
Operating temperature: -40...150°C
на замовлення 710 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 710+ | 26.39 грн |
| ZTX853 |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 130MHz
Quantity in set/package: 4000pcs.
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 130MHz
Quantity in set/package: 4000pcs.
на замовлення 3560 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 101.23 грн |
| 10+ | 57.74 грн |
| 25+ | 49.18 грн |
| 100+ | 39.53 грн |
| 500+ | 32.65 грн |
| ZTX853STZ |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
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| 74LVC374AT20-13 |
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Виробник: DIODES INCORPORATED
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; IN: 1; CMOS; SMD; TSSOP20; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...150°C
Family: LVC
Kind of output: 3-state
Supply voltage: 1.65...3.6V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; IN: 1; CMOS; SMD; TSSOP20; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...150°C
Family: LVC
Kind of output: 3-state
Supply voltage: 1.65...3.6V DC
Kind of input: with Schmitt trigger
Kind of package: reel; tape
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