Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73025) > Сторінка 1174 з 1218
| Фото | Назва | Виробник | Інформація |
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B2100A-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.79V Max. forward impulse current: 50A Leakage current: 15mA Capacitance: 75pF Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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B2100AE-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.6V Max. forward impulse current: 50A Leakage current: 0.4mA Capacitance: 70pF Kind of package: reel; tape |
на замовлення 4971 шт: термін постачання 14-30 дні (днів) |
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| B2100AF-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA flat; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Case: SMA flat Max. forward voltage: 0.79V Max. forward impulse current: 75A Leakage current: 2mA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||
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SMCJ33A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2360 шт: термін постачання 14-30 дні (днів) |
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| SMCJ33AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.1A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| SMAJ18CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 13.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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74AHC126S14-13 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AHC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Kind of package: reel; tape Operating temperature: -40...125°C Quiescent current: 40µA Kind of output: 3-state Manufacturer series: AHC |
на замовлення 1449 шт: термін постачання 14-30 дні (днів) |
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BAS40-05T-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.15W Reverse recovery time: 5ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS40-05Q-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry Power dissipation: 0.35W Reverse recovery time: 5ns |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||
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BAS40-05Q-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.2µA Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry Power dissipation: 0.35W Reverse recovery time: 5ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FZT688BTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223 Polarisation: bipolar Case: SOT223 Mounting: SMD Type of transistor: NPN Power dissipation: 3W Collector current: 4A Collector-emitter voltage: 12V Quantity in set/package: 1000pcs. Frequency: 150MHz Kind of package: reel; tape |
на замовлення 225 шт: термін постачання 14-30 дні (днів) |
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DMG3402L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 85mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 857 шт: термін постачання 14-30 дні (днів) |
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DMN3065LW-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323 Polarisation: unipolar Case: SOT323 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 85mΩ Power dissipation: 0.77W Drain current: 4A Gate-source voltage: ±12V Drain-source voltage: 30V Kind of package: 7 inch reel; tape |
на замовлення 2518 шт: термін постачання 14-30 дні (днів) |
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PAM8302AADCR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection Operating temperature: -40...85°C Mounting: SMD Output power: 2.5W Number of channels: 1 Voltage supply range: 2...5.5V DC Type of integrated circuit: audio amplifier Integrated circuit features: low noise; thermal protection Case: SO8 Amplifier class: D Kind of package: reel; tape |
на замовлення 865 шт: термін постачання 14-30 дні (днів) |
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| PAM8302AASCR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection Operating temperature: -40...85°C Mounting: SMD Output power: 2.5W Number of channels: 1 Voltage supply range: 2...5.5V DC Type of integrated circuit: audio amplifier Integrated circuit features: low noise; thermal protection Case: MSOP8 Amplifier class: D Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PAM8302AAYCR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection Type of integrated circuit: audio amplifier Output power: 2.5W Integrated circuit features: low noise; thermal protection Mounting: SMD Number of channels: 1 Amplifier class: D Case: U-DFN3030-8 Operating temperature: -40...85°C Kind of package: reel; tape Voltage supply range: 2...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ZVN2106A | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.45A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
на замовлення 448 шт: термін постачання 14-30 дні (днів) |
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ZVN2106ASTZ | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.45A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
на замовлення 1603 шт: термін постачання 14-30 дні (днів) |
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SMCJ30A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 33.3÷36.8V; 31A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 31A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 139 шт: термін постачання 14-30 дні (днів) |
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DF01S-T | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
на замовлення 929 шт: термін постачання 14-30 дні (днів) |
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BZT52C4V7T-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 4.7V; SMD; SOD523; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6.5% Case: SOD523 Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 2422 шт: термін постачання 14-30 дні (днів) |
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BZT52C4V7Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 4.7V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6.5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
на замовлення 1340 шт: термін постачання 14-30 дні (днів) |
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BZT52C4V7LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 4.7V; SMD; X1-DFN1006-2; reel,tape Type of diode: Zener Power dissipation: 0.25W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6.5% Case: X1-DFN1006-2 Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 466 шт: термін постачання 14-30 дні (днів) |
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ZSR500GTA | DIODES INCORPORATED |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 0.2A; SOT223; SMD; ZSR Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 0.2A Case: SOT223 Mounting: SMD Manufacturer series: ZSR Kind of package: reel; tape Operating temperature: -55...125°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 7...20V |
на замовлення 338 шт: термін постачання 14-30 дні (днів) |
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| DMT6012LPSW-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 10.5A; Idm: 120A; 3.1W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 22.2nC On-state resistance: 17mΩ Power dissipation: 3.1W Drain current: 10.5A Gate-source voltage: ±20V Pulsed drain current: 120A Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMAZ18-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Kind of package: reel; tape Case: SMA Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 3650 шт: термін постачання 14-30 дні (днів) |
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SMAJ12A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 5µA Features of semiconductor devices: glass passivated |
на замовлення 2218 шт: термін постачання 14-30 дні (днів) |
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| SMAJ12AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P4SMAJ12ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 12.2÷13.5V; 20.1A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 12.2...13.5V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P6SMAJ12ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...15.3V Max. forward impulse current: 30.2A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AS7808AT-E1 | DIODES INCORPORATED |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 8V; 1A; TO220-3; THT; AS78XXA Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 8V Output current: 1A Case: TO220-3 Mounting: THT Kind of package: tube Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 10.6...23V Manufacturer series: AS78XXA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMPH6050SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252 Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: TO252 Drain-source voltage: -60V Pulsed drain current: -40A Drain current: -6A Gate charge: 25nC On-state resistance: 70mΩ Power dissipation: 3.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 2508 шт: термін постачання 14-30 дні (днів) |
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AP3125BKTR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback Application: SMPS Case: SOT26 Type of integrated circuit: PMIC Topology: flyback Mounting: SMD Operating temperature: -20...125°C Duty cycle factor: 0...80% Output current: 0.35A Number of channels: 1 Supply voltage: 10...25V Frequency: 20...70kHz Kind of integrated circuit: PWM controller |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
| BSS138K-7 | DIODES INCORPORATED |
Category: Transistors - UnclassifiedDescription: BSS138K-7 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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BAS21-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Kind of package: reel; tape Max. load current: 0.4A Features of semiconductor devices: small signal |
на замовлення 610 шт: термін постачання 14-30 дні (днів) |
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BAS21DWA-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT353; Ufmax: 1.3V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double independent Capacitance: 0.7pF Case: SOT353 Max. forward voltage: 1.3V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: small signal |
на замовлення 1890 шт: термін постачання 14-30 дні (днів) |
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BAS21Q-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Kind of package: reel; tape Application: automotive industry Max. load current: 0.4A Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BAS21TWQ-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 10A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BAS21WQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT323 Max. forward voltage: 1.25V Max. forward impulse current: 10A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BAS21TM-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT26; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: triple independent Case: SOT26 Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BAS21TMQ-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT26; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: triple independent Case: SOT26 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMT10H015SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Pulsed drain current: 215A Power dissipation: 2.9W Case: TO252 Gate-source voltage: ±20V On-state resistance: 11.1mΩ Mounting: SMD Gate charge: 30.1nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 2462 шт: термін постачання 14-30 дні (днів) |
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AP5724WUG-7 | DIODES INCORPORATED |
Category: LED driversDescription: Driver; DC/DC converter,LED driver; 40mA; TSOT26; SMD; 1÷1.4MHz Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter; LED driver Case: TSOT26 Output current: 40mA Number of channels: 1 Integrated circuit features: PWM; soft-start function; UVLO (UnderVoltage LockOut) Mounting: SMD Operating voltage: 2.7...5.5V DC Frequency: 1...1.4MHz Topology: boost Kind of package: reel; tape Operating temperature: -40...85°C |
на замовлення 1369 шт: термін постачання 14-30 дні (днів) |
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| SMCJ36AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 25.8A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HBS410-13 | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 4A; Ifsm: 120A; HBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 120A Case: HBS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TT410-13 | DIODES INCORPORATED |
Category: Bridge rectifiers - UnclassifiedDescription: TT410-13 |
на замовлення 1500 шт: термін постачання 14-30 дні (днів) |
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DMG7430LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8 Kind of package: 7 inch reel; tape Case: PowerDI®3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 15mΩ Power dissipation: 0.9W Drain current: 9.2A Gate-source voltage: ±20V Drain-source voltage: 30V Polarisation: unipolar |
на замовлення 155 шт: термін постачання 14-30 дні (днів) |
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| QSBT40-7-F | DIODES INCORPORATED |
Category: Protection diodes - arraysDescription: Diode: TVS array; unidirectional; SOT363; Ch: 4; reel,tape Mounting: SMD Number of channels: 4 Type of diode: TVS array Case: SOT363 Kind of package: reel; tape Semiconductor structure: unidirectional Max. off-state voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
2N7002T-7-F | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.15W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 87 шт: термін постачання 14-30 дні (днів) |
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| FMMT618TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 2.5A Power dissipation: 0.806W Case: SOT23 Pulsed collector current: 6A Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
FMMT618QTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23 Quantity in set/package: 3000pcs. Kind of package: reel; tape Mounting: SMD Case: SOT23 Collector current: 2.5A Power dissipation: 0.806W Pulsed collector current: 6A Collector-emitter voltage: 20V Frequency: 140MHz Application: automotive industry Polarisation: bipolar Type of transistor: NPN |
на замовлення 755 шт: термін постачання 14-30 дні (днів) |
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| FMMT618TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 2.5A Power dissipation: 0.806W Case: SOT23 Pulsed collector current: 6A Current gain: 100...450 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 100...140MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ZXSC310E5TA | DIODES INCORPORATED |
Category: LED driversDescription: Driver; DC/DC converter,LED driver; SOT23-5; SMD; 200kHz; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter; LED driver Case: SOT23-5 Mounting: SMD Frequency: 200kHz Topology: boost Number of channels: 1 Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 800mV DC...8V DC Efficiency: 94% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
MMDT2227Q-7-F | DIODES INCORPORATED |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 40/60V Collector current: 0.6A Power dissipation: 0.2W Case: SOT363 Current gain: 35...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Kind of transistor: complementary pair Quantity in set/package: 3000pcs. Application: automotive industry |
на замовлення 2968 шт: термін постачання 14-30 дні (днів) |
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| MMDT2227-7-F | DIODES INCORPORATED |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 40/60V Collector current: 0.6A Power dissipation: 0.2W Case: SOT363 Current gain: 35...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Kind of transistor: complementary pair Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MMDT2227M-7 | DIODES INCORPORATED |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 40/60V Collector current: 0.6A Power dissipation: 0.3W Case: SOT26 Current gain: 35...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Kind of transistor: complementary pair Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
MMDT5451-7-F | DIODES INCORPORATED |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 160/150V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 160/150V Collector current: 0.2A Power dissipation: 0.2W Case: SOT363 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape |
на замовлення 239 шт: термін постачання 14-30 дні (днів) |
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ZXTC2045E6TA | DIODES INCORPORATED |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 1.5A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 30V Collector current: 1.5A Power dissipation: 1.7W Case: SOT26 Pulsed collector current: 5A Current gain: 180...500 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 195MHz; 265MHz |
на замовлення 1096 шт: термін постачання 14-30 дні (днів) |
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ZDT6753TA | DIODES INCORPORATED |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8 Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 2.75W Case: SM8 Pulsed collector current: 6A Current gain: 100 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 140MHz |
на замовлення 967 шт: термін постачання 14-30 дні (днів) |
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B360AM-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 80A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| B2100A-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.79V
Max. forward impulse current: 50A
Leakage current: 15mA
Capacitance: 75pF
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.79V
Max. forward impulse current: 50A
Leakage current: 15mA
Capacitance: 75pF
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| B2100AE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.6V
Max. forward impulse current: 50A
Leakage current: 0.4mA
Capacitance: 70pF
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.6V
Max. forward impulse current: 50A
Leakage current: 0.4mA
Capacitance: 70pF
Kind of package: reel; tape
на замовлення 4971 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 18.23 грн |
| 34+ | 12.70 грн |
| 100+ | 8.89 грн |
| 500+ | 6.94 грн |
| 1000+ | 6.18 грн |
| 2000+ | 5.50 грн |
| B2100AF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.79V
Max. forward impulse current: 75A
Leakage current: 2mA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.79V
Max. forward impulse current: 75A
Leakage current: 2mA
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SMCJ33A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2360 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 37.38 грн |
| 15+ | 28.61 грн |
| 17+ | 25.14 грн |
| 100+ | 16.08 грн |
| 500+ | 13.04 грн |
| 1000+ | 12.27 грн |
| SMCJ33AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SMAJ18CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| 74AHC126S14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of output: 3-state
Manufacturer series: AHC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of output: 3-state
Manufacturer series: AHC
на замовлення 1449 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 28+ | 16.41 грн |
| 38+ | 11.26 грн |
| 44+ | 9.65 грн |
| 100+ | 7.96 грн |
| 250+ | 7.11 грн |
| 500+ | 6.69 грн |
| 1000+ | 6.52 грн |
| BAS40-05T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
товару немає в наявності
В кошику
од. на суму грн.
| BAS40-05Q-13-F |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.35W
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.35W
Reverse recovery time: 5ns
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| BAS40-05Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.35W
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.35W
Reverse recovery time: 5ns
товару немає в наявності
В кошику
од. на суму грн.
| FZT688BTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
на замовлення 225 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 74.75 грн |
| 10+ | 43.34 грн |
| 100+ | 28.27 грн |
| DMG3402L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 857 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 46+ | 10.03 грн |
| 50+ | 8.47 грн |
| 55+ | 7.79 грн |
| 67+ | 6.40 грн |
| 100+ | 5.99 грн |
| 500+ | 5.36 грн |
| DMN3065LW-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
на замовлення 2518 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 30.08 грн |
| 21+ | 20.32 грн |
| 50+ | 13.97 грн |
| 100+ | 11.94 грн |
| 500+ | 8.38 грн |
| 1000+ | 7.28 грн |
| PAM8302AADCR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Operating temperature: -40...85°C
Mounting: SMD
Output power: 2.5W
Number of channels: 1
Voltage supply range: 2...5.5V DC
Type of integrated circuit: audio amplifier
Integrated circuit features: low noise; thermal protection
Case: SO8
Amplifier class: D
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Operating temperature: -40...85°C
Mounting: SMD
Output power: 2.5W
Number of channels: 1
Voltage supply range: 2...5.5V DC
Type of integrated circuit: audio amplifier
Integrated circuit features: low noise; thermal protection
Case: SO8
Amplifier class: D
Kind of package: reel; tape
на замовлення 865 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 35.55 грн |
| 19+ | 22.94 грн |
| 25+ | 20.91 грн |
| 100+ | 18.45 грн |
| 250+ | 17.61 грн |
| PAM8302AASCR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Operating temperature: -40...85°C
Mounting: SMD
Output power: 2.5W
Number of channels: 1
Voltage supply range: 2...5.5V DC
Type of integrated circuit: audio amplifier
Integrated circuit features: low noise; thermal protection
Case: MSOP8
Amplifier class: D
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Operating temperature: -40...85°C
Mounting: SMD
Output power: 2.5W
Number of channels: 1
Voltage supply range: 2...5.5V DC
Type of integrated circuit: audio amplifier
Integrated circuit features: low noise; thermal protection
Case: MSOP8
Amplifier class: D
Kind of package: reel; tape
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| PAM8302AAYCR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Output power: 2.5W
Integrated circuit features: low noise; thermal protection
Mounting: SMD
Number of channels: 1
Amplifier class: D
Case: U-DFN3030-8
Operating temperature: -40...85°C
Kind of package: reel; tape
Voltage supply range: 2...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 2.5W; low noise,thermal protection
Type of integrated circuit: audio amplifier
Output power: 2.5W
Integrated circuit features: low noise; thermal protection
Mounting: SMD
Number of channels: 1
Amplifier class: D
Case: U-DFN3030-8
Operating temperature: -40...85°C
Kind of package: reel; tape
Voltage supply range: 2...5.5V DC
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| ZVN2106A |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 448 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 66.55 грн |
| 12+ | 35.47 грн |
| 50+ | 28.19 грн |
| 100+ | 25.40 грн |
| 200+ | 24.38 грн |
| ZVN2106ASTZ |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 1603 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 69.28 грн |
| 11+ | 41.56 грн |
| 100+ | 27.60 грн |
| 250+ | 24.80 грн |
| SMCJ30A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 31A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 139 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 33.73 грн |
| 16+ | 27.26 грн |
| 100+ | 18.45 грн |
| DF01S-T |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 929 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 39.20 грн |
| 18+ | 24.29 грн |
| 100+ | 14.14 грн |
| 500+ | 10.33 грн |
| BZT52C4V7T-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 2422 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 63+ | 7.29 грн |
| 74+ | 5.76 грн |
| 88+ | 4.83 грн |
| 191+ | 2.22 грн |
| BZT52C4V7Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.7V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 4.7V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
на замовлення 1340 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 63+ | 7.29 грн |
| 77+ | 5.50 грн |
| 96+ | 4.44 грн |
| 164+ | 2.58 грн |
| 500+ | 1.79 грн |
| 1000+ | 1.76 грн |
| BZT52C4V7LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.7V; SMD; X1-DFN1006-2; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: X1-DFN1006-2
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.7V; SMD; X1-DFN1006-2; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: X1-DFN1006-2
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 466 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 13.67 грн |
| 50+ | 8.63 грн |
| 100+ | 5.10 грн |
| ZSR500GTA |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.2A; SOT223; SMD; ZSR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Manufacturer series: ZSR
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 7...20V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.2A; SOT223; SMD; ZSR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Manufacturer series: ZSR
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 7...20V
на замовлення 338 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 70.20 грн |
| 8+ | 54.68 грн |
| 10+ | 49.10 грн |
| 25+ | 42.83 грн |
| 50+ | 39.28 грн |
| 100+ | 36.65 грн |
| 250+ | 34.37 грн |
| DMT6012LPSW-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.5A; Idm: 120A; 3.1W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 17mΩ
Power dissipation: 3.1W
Drain current: 10.5A
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.5A; Idm: 120A; 3.1W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.2nC
On-state resistance: 17mΩ
Power dissipation: 3.1W
Drain current: 10.5A
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| SMAZ18-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 3650 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 21+ | 21.88 грн |
| 27+ | 15.91 грн |
| 31+ | 13.97 грн |
| 100+ | 8.89 грн |
| 500+ | 6.94 грн |
| 1000+ | 6.43 грн |
| 2000+ | 6.01 грн |
| SMAJ12A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
на замовлення 2218 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 17.32 грн |
| 40+ | 10.84 грн |
| 46+ | 9.40 грн |
| 59+ | 7.18 грн |
| 100+ | 6.50 грн |
| 500+ | 5.34 грн |
| 1000+ | 5.06 грн |
| SMAJ12AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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од. на суму грн.
| P4SMAJ12ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 20.1A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 20.1A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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од. на суму грн.
| P6SMAJ12ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷15.3V; 30.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| AS7808AT-E1 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; TO220-3; THT; AS78XXA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 8V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10.6...23V
Manufacturer series: AS78XXA
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; TO220-3; THT; AS78XXA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 8V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10.6...23V
Manufacturer series: AS78XXA
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| DMPH6050SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Drain-source voltage: -60V
Pulsed drain current: -40A
Drain current: -6A
Gate charge: 25nC
On-state resistance: 70mΩ
Power dissipation: 3.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Drain-source voltage: -60V
Pulsed drain current: -40A
Drain current: -6A
Gate charge: 25nC
On-state resistance: 70mΩ
Power dissipation: 3.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 2508 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 67.46 грн |
| 10+ | 46.13 грн |
| 50+ | 31.74 грн |
| 100+ | 27.00 грн |
| 500+ | 20.40 грн |
| AP3125BKTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Application: SMPS
Case: SOT26
Type of integrated circuit: PMIC
Topology: flyback
Mounting: SMD
Operating temperature: -20...125°C
Duty cycle factor: 0...80%
Output current: 0.35A
Number of channels: 1
Supply voltage: 10...25V
Frequency: 20...70kHz
Kind of integrated circuit: PWM controller
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Application: SMPS
Case: SOT26
Type of integrated circuit: PMIC
Topology: flyback
Mounting: SMD
Operating temperature: -20...125°C
Duty cycle factor: 0...80%
Output current: 0.35A
Number of channels: 1
Supply voltage: 10...25V
Frequency: 20...70kHz
Kind of integrated circuit: PWM controller
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BSS138K-7 |
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на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.32 грн |
| BAS21-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Max. load current: 0.4A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Max. load current: 0.4A
Features of semiconductor devices: small signal
на замовлення 610 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 63+ | 7.29 грн |
| 109+ | 3.89 грн |
| 173+ | 2.45 грн |
| 500+ | 1.87 грн |
| BAS21DWA-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT353; Ufmax: 1.3V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 0.7pF
Case: SOT353
Max. forward voltage: 1.3V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT353; Ufmax: 1.3V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 0.7pF
Case: SOT353
Max. forward voltage: 1.3V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 1890 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 46+ | 10.03 грн |
| 65+ | 6.60 грн |
| 93+ | 4.57 грн |
| 106+ | 4.02 грн |
| 500+ | 3.17 грн |
| BAS21Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.4A
Features of semiconductor devices: small signal
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| BAS21TWQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| BAS21WQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| BAS21TM-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT26; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT26
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT26; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT26
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| BAS21TMQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT26; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT26
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT26; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT26
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| DMT10H015SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 215A
Power dissipation: 2.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 215A
Power dissipation: 2.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2462 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 72.93 грн |
| 10+ | 51.47 грн |
| 25+ | 44.95 грн |
| 100+ | 37.92 грн |
| 500+ | 31.32 грн |
| 1000+ | 30.81 грн |
| AP5724WUG-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 40mA; TSOT26; SMD; 1÷1.4MHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: TSOT26
Output current: 40mA
Number of channels: 1
Integrated circuit features: PWM; soft-start function; UVLO (UnderVoltage LockOut)
Mounting: SMD
Operating voltage: 2.7...5.5V DC
Frequency: 1...1.4MHz
Topology: boost
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; 40mA; TSOT26; SMD; 1÷1.4MHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: TSOT26
Output current: 40mA
Number of channels: 1
Integrated circuit features: PWM; soft-start function; UVLO (UnderVoltage LockOut)
Mounting: SMD
Operating voltage: 2.7...5.5V DC
Frequency: 1...1.4MHz
Topology: boost
Kind of package: reel; tape
Operating temperature: -40...85°C
на замовлення 1369 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 41.93 грн |
| 16+ | 27.26 грн |
| 100+ | 21.59 грн |
| 250+ | 20.65 грн |
| SMCJ36AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 25.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| HBS410-13 |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 4A; Ifsm: 120A; HBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: HBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 4A; Ifsm: 120A; HBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 120A
Case: HBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| TT410-13 |
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на замовлення 1500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 27.35 грн |
| DMG7430LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 15mΩ
Power dissipation: 0.9W
Drain current: 9.2A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.2A; 0.9W; PowerDI®3333-8
Kind of package: 7 inch reel; tape
Case: PowerDI®3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 15mΩ
Power dissipation: 0.9W
Drain current: 9.2A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
на замовлення 155 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 25.53 грн |
| 22+ | 20.15 грн |
| 24+ | 18.12 грн |
| 100+ | 12.53 грн |
| QSBT40-7-F |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT363; Ch: 4; reel,tape
Mounting: SMD
Number of channels: 4
Type of diode: TVS array
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 30V
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT363; Ch: 4; reel,tape
Mounting: SMD
Number of channels: 4
Type of diode: TVS array
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: unidirectional
Max. off-state voltage: 30V
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| 2N7002T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.15W; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.15W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 87 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 24+ | 19.14 грн |
| 50+ | 8.47 грн |
| 87+ | 5.08 грн |
| FMMT618TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
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| FMMT618QTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 2.5A
Power dissipation: 0.806W
Pulsed collector current: 6A
Collector-emitter voltage: 20V
Frequency: 140MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Collector current: 2.5A
Power dissipation: 0.806W
Pulsed collector current: 6A
Collector-emitter voltage: 20V
Frequency: 140MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
на замовлення 755 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 51.96 грн |
| 15+ | 29.97 грн |
| 100+ | 18.79 грн |
| 500+ | 14.05 грн |
| FMMT618TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Current gain: 100...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...140MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Current gain: 100...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...140MHz
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| ZXSC310E5TA |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; SOT23-5; SMD; 200kHz; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-5
Mounting: SMD
Frequency: 200kHz
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 800mV DC...8V DC
Efficiency: 94%
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; SOT23-5; SMD; 200kHz; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-5
Mounting: SMD
Frequency: 200kHz
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 800mV DC...8V DC
Efficiency: 94%
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| MMDT2227Q-7-F |
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Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Kind of transistor: complementary pair
Quantity in set/package: 3000pcs.
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Kind of transistor: complementary pair
Quantity in set/package: 3000pcs.
Application: automotive industry
на замовлення 2968 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 24.61 грн |
| 28+ | 15.66 грн |
| 100+ | 8.82 грн |
| 500+ | 6.18 грн |
| 1000+ | 5.42 грн |
| MMDT2227-7-F |
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Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Kind of transistor: complementary pair
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT363
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Kind of transistor: complementary pair
Quantity in set/package: 3000pcs.
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| MMDT2227M-7 |
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Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT26
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Kind of transistor: complementary pair
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40/60V; 0.6A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40/60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT26
Current gain: 35...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Kind of transistor: complementary pair
Quantity in set/package: 3000pcs.
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| MMDT5451-7-F |
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Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 160/150V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 160/150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 160/150V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 160/150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
на замовлення 239 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 20.97 грн |
| 31+ | 14.05 грн |
| 100+ | 7.91 грн |
| ZXTC2045E6TA |
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Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 1.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 30V
Collector current: 1.5A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 5A
Current gain: 180...500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 195MHz; 265MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 1.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 30V
Collector current: 1.5A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 5A
Current gain: 180...500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 195MHz; 265MHz
на замовлення 1096 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 65.64 грн |
| 12+ | 38.35 грн |
| 100+ | 26.24 грн |
| 150+ | 24.46 грн |
| 500+ | 19.55 грн |
| 750+ | 18.96 грн |
| ZDT6753TA |
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Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 140MHz
на замовлення 967 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 113.04 грн |
| 10+ | 66.62 грн |
| 100+ | 45.03 грн |
| 250+ | 40.04 грн |
| B360AM-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 80A
Kind of package: reel; tape
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