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74LVC1G125Z-7 74LVC1G125Z-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
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74LVC1G125FW4-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
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74LVC1G125FZ4-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
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74AUP1G125FS3-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Number of channels: 1
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Kind of output: 3-state
Technology: CMOS
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74AUP1G125FW5-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Number of channels: 1
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Kind of output: 3-state
Technology: CMOS
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74AUP1G125FX4-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Number of channels: 1
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Kind of output: 3-state
Technology: CMOS
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74AUP1G125FZ4-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Type of integrated circuit: digital
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of inputs: 2
Family: AUP
Number of channels: 1
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Technology: CMOS
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SMAJ28CA-13-F SMAJ28CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 2843 шт:
термін постачання 14-30 дні (днів)
20+22.58 грн
27+15.93 грн
31+13.67 грн
100+9.31 грн
500+8.64 грн
1000+7.80 грн
2000+7.13 грн
2500+6.96 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
SMAJ28A-13-F SMAJ28A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
26+15.93 грн
Мінімальне замовлення: 26 шт
В кошику  од. на суму  грн.
SMAJ28CAQ-13-F SMAJ28CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMAJ28AQ-13-F SMAJ28AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 DIODES INCORPORATED DMTH6004SK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Case: TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 3.9W
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
на замовлення 780 шт:
термін постачання 14-30 дні (днів)
4+135.47 грн
10+83.03 грн
25+70.45 грн
100+58.71 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DMTH4004SCTB-13 DIODES INCORPORATED DMTH4004SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3mΩ
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 Мінімальне замовлення: 800 шт
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DMTH4004SCTBQ-13 DIODES INCORPORATED DMTH4004SCTBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3mΩ
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 Мінімальне замовлення: 800 шт
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DMTH6004SCTB-13 DIODES INCORPORATED DMTH6004SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 95.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
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 Мінімальне замовлення: 800 шт
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DMTH6004SCTBQ-13 DIODES INCORPORATED DMTH6004SCTBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 95.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
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 Мінімальне замовлення: 800 шт
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AP62250WU-7 AP62250WU-7 DIODES INCORPORATED AP62250.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2.5A; TSOT26
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 2.5A
Case: TSOT26
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: PMIC
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Frequency: 1.3MHz
Topology: buck
на замовлення 956 шт:
термін постачання 14-30 дні (днів)
18+26.19 грн
20+20.97 грн
23+18.70 грн
27+15.85 грн
50+14.26 грн
100+13.00 грн
250+11.99 грн
Мінімальне замовлення: 18 шт
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P6SMAJ28ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMT6013LSS-13 DMT6013LSS-13 DIODES INCORPORATED DMT6013LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Pulsed drain current: 60A
Power dissipation: 2.1W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
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SMBJ28A-13-F SMBJ28A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ28AQ-13-F SMBJ28AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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BZT52C15SQ-7-F BZT52C15SQ-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
2+225.79 грн
Мінімальне замовлення: 2 шт
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BZT52C15LP-7 BZT52C15LP-7 DIODES INCORPORATED BZT52CxxLP_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 2137 шт:
термін постачання 14-30 дні (днів)
20+22.58 грн
27+16.10 грн
34+12.66 грн
100+8.30 грн
500+5.62 грн
1000+5.12 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
BZT52C15-13-F BZT52C15-13-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 15V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37W
Tolerance: ±6%
Zener voltage: 15V
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
9+50.58 грн
Мінімальне замовлення: 9 шт
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BZT52C15T-7 BZT52C15T-7 DIODES INCORPORATED BZT52CxxT_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
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 Мінімальне замовлення: 10 шт
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BZT52C15TQ-7-F BZT52C15TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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B550C-13-F B550C-13-F DIODES INCORPORATED B5X0C-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 5A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Load current: 5A
Max. forward voltage: 0.7V
Capacitance: 0.3nF
на замовлення 791 шт:
термін постачання 14-30 дні (днів)
12+40.64 грн
15+29.86 грн
16+26.92 грн
100+23.90 грн
500+22.56 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
BAV23A-7-F BAV23A-7-F DIODES INCORPORATED BAV23-7-F-DTE.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.625A
Capacitance: 5pF
на замовлення 190 шт:
термін постачання 14-30 дні (днів)
21+21.68 грн
29+14.93 грн
34+12.58 грн
100+7.14 грн
Мінімальне замовлення: 21 шт
В кошику  од. на суму  грн.
BAV23CQ-7-F BAV23CQ-7-F DIODES INCORPORATED BAV23A_C_S.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 9A
Max. load current: 0.625A
Capacitance: 5pF
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BAV23S-7-F BAV23S-7-F DIODES INCORPORATED bav23x.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 9A
Max. load current: 0.625A
Capacitance: 5pF
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BAV23C-7-F BAV23C-7-F DIODES INCORPORATED BAV23A_C_S.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 9A
Max. load current: 0.625A
Capacitance: 5pF
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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BAV23SQ-13-F BAV23SQ-13-F DIODES INCORPORATED BAV23A_C_S.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 9A
Max. load current: 0.625A
Capacitance: 5pF
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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BAV23-7 DIODES INCORPORATED ds31756.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT143; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT143
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 5pF
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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BAV23AQ-13-F BAV23AQ-13-F DIODES INCORPORATED BAV23AQ_CQ_SQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.625A
Capacitance: 5pF
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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BAV23AQ-7-F BAV23AQ-7-F DIODES INCORPORATED BAV23AQ_CQ_SQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.625A
Capacitance: 5pF
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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BAV23SQ-7-F BAV23SQ-7-F DIODES INCORPORATED BAV23A_C_S.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 9A
Max. load current: 0.625A
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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DDC123JU-7-F DDC123JU-7-F DIODES INCORPORATED ddcxxxxU.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Case: SOT363
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 139 шт:
термін постачання 14-30 дні (днів)
34+13.55 грн
45+9.48 грн
100+6.20 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
SMBJ30AQ-13-F SMBJ30AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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GBJ3510-F DIODES INCORPORATED GBJ3510.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
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SMAJ14CA-13-F SMAJ14CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2135 шт:
термін постачання 14-30 дні (днів)
27+17.16 грн
34+12.41 грн
39+10.82 грн
100+6.46 грн
500+5.54 грн
1000+5.37 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
DMG1016UDW-7 DMG1016UDW-7 DIODES INCORPORATED DMG1016UDW-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Power dissipation: 0.53W
Polarisation: unipolar
Version: ESD
Drain current: 0.85/-1.07A
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: SOT363
On-state resistance: 0.45/0.75Ω
на замовлення 116 шт:
термін постачання 14-30 дні (днів)
18+26.19 грн
24+17.70 грн
50+12.08 грн
100+10.23 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
DMG1012T-7 DMG1012T-7 DIODES INCORPORATED DMG1012T-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523; ESD
Mounting: SMD
Power dissipation: 0.28W
Polarisation: unipolar
Version: ESD
Drain current: 0.45A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: SOT523
On-state resistance: 0.3Ω
на замовлення 3368 шт:
термін постачання 14-30 дні (днів)
20+22.58 грн
27+16.02 грн
50+11.41 грн
100+9.81 грн
500+7.13 грн
1000+6.46 грн
1500+6.04 грн
3000+5.54 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
DMG1013T-7 DMG1013T-7 DIODES INCORPORATED ds31784.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: SOT523
On-state resistance: 0.7Ω
Pulsed drain current: -6A
Power dissipation: 0.27W
Polarisation: unipolar
Version: ESD
Drain current: -330mA
Kind of channel: enhancement
Drain-source voltage: -20V
на замовлення 2416 шт:
термін постачання 14-30 дні (днів)
30+15.35 грн
48+8.89 грн
69+6.12 грн
100+5.25 грн
500+3.77 грн
1000+3.36 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
DMG1016V-7 DMG1016V-7 DIODES INCORPORATED ds31767.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.63/-0.46A; 0.53W
Mounting: SMD
Power dissipation: 0.53W
Polarisation: unipolar
Version: ESD
Drain current: 0.63/-0.46A
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: SOT563
On-state resistance: 0.4/0.7Ω
на замовлення 1324 шт:
термін постачання 14-30 дні (днів)
14+33.42 грн
19+22.14 грн
50+15.35 грн
100+13.08 грн
500+9.31 грн
1000+8.22 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
DMG1012TQ-7 DMG1012TQ-7 DIODES INCORPORATED DMG1012T-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523; ESD
Mounting: SMD
Power dissipation: 0.28W
Polarisation: unipolar
Version: ESD
Drain current: 0.45A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: SOT523
On-state resistance: 0.3Ω
на замовлення 2592 шт:
термін постачання 14-30 дні (днів)
39+11.74 грн
50+8.47 грн
68+6.19 грн
100+5.46 грн
500+4.25 грн
1000+3.81 грн
1500+3.59 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
DMG1012UWQ-7 DMG1012UWQ-7 DIODES INCORPORATED DMG1012UWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323
Mounting: SMD
Pulsed drain current: 6A
Power dissipation: 0.61W
Gate charge: 1nC
Polarisation: unipolar
Drain current: 0.75A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: SOT323
On-state resistance: 0.75Ω
на замовлення 1942 шт:
термін постачання 14-30 дні (днів)
20+23.48 грн
32+13.25 грн
100+8.27 грн
500+6.11 грн
1000+5.39 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
ZXGD3003E6QTA DIODES INCORPORATED ZXGD3003E6Q.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SBR20A100CT-G DIODES INCORPORATED Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Mounting: THT
Type of diode: rectifying
Technology: SBR®
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 0.1kV
Case: TO220AB
Semiconductor structure: common cathode; double
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SMBJ36A-13-F SMBJ36A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 975 шт:
термін постачання 14-30 дні (днів)
23+19.87 грн
30+14.26 грн
34+12.41 грн
100+7.97 грн
500+6.71 грн
Мінімальне замовлення: 23 шт
В кошику  од. на суму  грн.
SMBJ36AQ-13-F SMBJ36AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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AP2202K-5.0TRG1 AP2202K-5.0TRG1 DIODES INCORPORATED AP2202.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP2202
на замовлення 2332 шт:
термін постачання 14-30 дні (днів)
36+12.64 грн
44+9.73 грн
50+8.55 грн
58+7.30 грн
100+6.46 грн
250+6.21 грн
500+6.12 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
AP2205-50W5-7 AP2205-50W5-7 DIODES INCORPORATED AP2205.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2205
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 2.3...24V
Integrated circuit features: shutdown mode control input
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AP2204RA-5.0TRG1 AP2204RA-5.0TRG1 DIODES INCORPORATED AP2204_Jan2020.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SOT89; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Manufacturer series: AP2204
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.6...24V
на замовлення 231 шт:
термін постачання 14-30 дні (днів)
13+37.03 грн
16+26.50 грн
19+22.73 грн
25+18.62 грн
100+13.84 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
AP2204R-5.0TRG1 AP2204R-5.0TRG1 DIODES INCORPORATED AP2204_Jan2020.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SOT89; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Manufacturer series: AP2204
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.6...24V
на замовлення 380 шт:
термін постачання 14-30 дні (днів)
40+10.73 грн
100+9.90 грн
250+9.23 грн
Мінімальне замовлення: 40 шт
В кошику  од. на суму  грн.
BZT52B15LP-7B DIODES INCORPORATED BZT52B15LP.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; X1-DFN1006-2; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: X1-DFN1006-2
Kind of package: reel; tape
Semiconductor structure: single diode
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SMAJ33A-13-F SMAJ33A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 2212 шт:
термін постачання 14-30 дні (днів)
42+10.84 грн
100+7.39 грн
500+4.86 грн
1000+4.67 грн
2000+4.34 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
SMAJ33AQ-13-F SMAJ33AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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P4SMAJ33ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMAJ33ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DESDA5V3L-7 DESDA5V3L-7 DIODES INCORPORATED DESDA5V3L.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.3V; 20A; unidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.3V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Leakage current: 2µA
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Max. forward impulse current: 20A
Capacitance: 220pF
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74LVC1G125Z-7 74LVC1G125.pdf
74LVC1G125Z-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
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74LVC1G125FW4-7 74LVC1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
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74LVC1G125FZ4-7 74LVC1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
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74AUP1G125FS3-7 74AUP1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Number of channels: 1
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Kind of output: 3-state
Technology: CMOS
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74AUP1G125FW5-7 74AUP1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Number of channels: 1
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Kind of output: 3-state
Technology: CMOS
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74AUP1G125FX4-7 74AUP1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Number of channels: 1
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Kind of output: 3-state
Technology: CMOS
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Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
74AUP1G125FZ4-7 74AUP1G125.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Type of integrated circuit: digital
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of inputs: 2
Family: AUP
Number of channels: 1
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Kind of output: push-pull
Technology: CMOS
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SMAJ28CA-13-F SMAJ_ser.pdf
SMAJ28CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 2843 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+22.58 грн
27+15.93 грн
31+13.67 грн
100+9.31 грн
500+8.64 грн
1000+7.80 грн
2000+7.13 грн
2500+6.96 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
SMAJ28A-13-F SMAJ_ser.pdf
SMAJ28A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
26+15.93 грн
Мінімальне замовлення: 26 шт
В кошику  од. на суму  грн.
SMAJ28CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ28CAQ-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMAJ28AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ28AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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DMTH6004SK3Q-13 DMTH6004SK3Q.pdf
DMTH6004SK3Q-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Case: TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 3.9W
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
на замовлення 780 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+135.47 грн
10+83.03 грн
25+70.45 грн
100+58.71 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DMTH4004SCTB-13 DMTH4004SCTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
DMTH4004SCTBQ-13 DMTH4004SCTBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
DMTH6004SCTB-13 DMTH6004SCTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 95.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
DMTH6004SCTBQ-13 DMTH6004SCTBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 95.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
AP62250WU-7 AP62250.pdf
AP62250WU-7
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2.5A; TSOT26
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 2.5A
Case: TSOT26
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: PMIC
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Frequency: 1.3MHz
Topology: buck
на замовлення 956 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
18+26.19 грн
20+20.97 грн
23+18.70 грн
27+15.85 грн
50+14.26 грн
100+13.00 грн
250+11.99 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
P6SMAJ28ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMT6013LSS-13 DMT6013LSS.pdf
DMT6013LSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Pulsed drain current: 60A
Power dissipation: 2.1W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
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SMBJ28A-13-F ds19002.pdf
SMBJ28A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ28AQ-13-F ds40740.pdf
SMBJ28AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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BZT52C15SQ-7-F BZT52CxxS_ser.pdf
BZT52C15SQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+225.79 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BZT52C15LP-7 BZT52CxxLP_ser.pdf
BZT52C15LP-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 2137 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+22.58 грн
27+16.10 грн
34+12.66 грн
100+8.30 грн
500+5.62 грн
1000+5.12 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
BZT52C15-13-F BZT52Cxx_ser.pdf
BZT52C15-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 15V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37W
Tolerance: ±6%
Zener voltage: 15V
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+50.58 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
BZT52C15T-7 BZT52CxxT_ser.pdf
BZT52C15T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
BZT52C15TQ-7-F ds30502.pdf
BZT52C15TQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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B550C-13-F B5X0C-DTE.pdf
B550C-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 5A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Load current: 5A
Max. forward voltage: 0.7V
Capacitance: 0.3nF
на замовлення 791 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
12+40.64 грн
15+29.86 грн
16+26.92 грн
100+23.90 грн
500+22.56 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
BAV23A-7-F BAV23-7-F-DTE.pdf
BAV23A-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.625A
Capacitance: 5pF
на замовлення 190 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
21+21.68 грн
29+14.93 грн
34+12.58 грн
100+7.14 грн
Мінімальне замовлення: 21 шт
В кошику  од. на суму  грн.
BAV23CQ-7-F BAV23A_C_S.pdf
BAV23CQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 9A
Max. load current: 0.625A
Capacitance: 5pF
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BAV23S-7-F bav23x.pdf
BAV23S-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 9A
Max. load current: 0.625A
Capacitance: 5pF
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BAV23C-7-F BAV23A_C_S.pdf
BAV23C-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 9A
Max. load current: 0.625A
Capacitance: 5pF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAV23SQ-13-F BAV23A_C_S.pdf
BAV23SQ-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 9A
Max. load current: 0.625A
Capacitance: 5pF
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
BAV23-7 ds31756.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT143; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Features of semiconductor devices: small signal
Case: SOT143
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 5pF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAV23AQ-13-F BAV23AQ_CQ_SQ.pdf
BAV23AQ-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.625A
Capacitance: 5pF
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
BAV23AQ-7-F BAV23AQ_CQ_SQ.pdf
BAV23AQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.625A
Capacitance: 5pF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAV23SQ-7-F BAV23A_C_S.pdf
BAV23SQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 9A
Max. load current: 0.625A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
DDC123JU-7-F ddcxxxxU.pdf
DDC123JU-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Case: SOT363
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 139 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
34+13.55 грн
45+9.48 грн
100+6.20 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
SMBJ30AQ-13-F ds40740.pdf
SMBJ30AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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GBJ3510-F GBJ3510.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
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SMAJ14CA-13-F SMAJ_ser.pdf
SMAJ14CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2135 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
27+17.16 грн
34+12.41 грн
39+10.82 грн
100+6.46 грн
500+5.54 грн
1000+5.37 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
DMG1016UDW-7 DMG1016UDW-7.pdf
DMG1016UDW-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Power dissipation: 0.53W
Polarisation: unipolar
Version: ESD
Drain current: 0.85/-1.07A
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: SOT363
On-state resistance: 0.45/0.75Ω
на замовлення 116 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
18+26.19 грн
24+17.70 грн
50+12.08 грн
100+10.23 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
DMG1012T-7 DMG1012T-DTE.pdf
DMG1012T-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523; ESD
Mounting: SMD
Power dissipation: 0.28W
Polarisation: unipolar
Version: ESD
Drain current: 0.45A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: SOT523
On-state resistance: 0.3Ω
на замовлення 3368 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+22.58 грн
27+16.02 грн
50+11.41 грн
100+9.81 грн
500+7.13 грн
1000+6.46 грн
1500+6.04 грн
3000+5.54 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
DMG1013T-7 ds31784.pdf
DMG1013T-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: SOT523
On-state resistance: 0.7Ω
Pulsed drain current: -6A
Power dissipation: 0.27W
Polarisation: unipolar
Version: ESD
Drain current: -330mA
Kind of channel: enhancement
Drain-source voltage: -20V
на замовлення 2416 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
30+15.35 грн
48+8.89 грн
69+6.12 грн
100+5.25 грн
500+3.77 грн
1000+3.36 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
DMG1016V-7 ds31767.pdf
DMG1016V-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.63/-0.46A; 0.53W
Mounting: SMD
Power dissipation: 0.53W
Polarisation: unipolar
Version: ESD
Drain current: 0.63/-0.46A
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: SOT563
On-state resistance: 0.4/0.7Ω
на замовлення 1324 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
14+33.42 грн
19+22.14 грн
50+15.35 грн
100+13.08 грн
500+9.31 грн
1000+8.22 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
DMG1012TQ-7 DMG1012T-DTE.pdf
DMG1012TQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.28W; SOT523; ESD
Mounting: SMD
Power dissipation: 0.28W
Polarisation: unipolar
Version: ESD
Drain current: 0.45A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: SOT523
On-state resistance: 0.3Ω
на замовлення 2592 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
39+11.74 грн
50+8.47 грн
68+6.19 грн
100+5.46 грн
500+4.25 грн
1000+3.81 грн
1500+3.59 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
DMG1012UWQ-7 DMG1012UWQ.pdf
DMG1012UWQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323
Mounting: SMD
Pulsed drain current: 6A
Power dissipation: 0.61W
Gate charge: 1nC
Polarisation: unipolar
Drain current: 0.75A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: SOT323
On-state resistance: 0.75Ω
на замовлення 1942 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+23.48 грн
32+13.25 грн
100+8.27 грн
500+6.11 грн
1000+5.39 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
ZXGD3003E6QTA ZXGD3003E6Q.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SBR20A100CT-G
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; TO220AB; SBR®
Mounting: THT
Type of diode: rectifying
Technology: SBR®
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 0.1kV
Case: TO220AB
Semiconductor structure: common cathode; double
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SMBJ36A-13-F SMBJ_ser.pdf
SMBJ36A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 975 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
23+19.87 грн
30+14.26 грн
34+12.41 грн
100+7.97 грн
500+6.71 грн
Мінімальне замовлення: 23 шт
В кошику  од. на суму  грн.
SMBJ36AQ-13-F ds40740.pdf
SMBJ36AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷46V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...46V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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AP2202K-5.0TRG1 AP2202.pdf
AP2202K-5.0TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.5...13.2V
Integrated circuit features: shutdown mode control input
Manufacturer series: AP2202
на замовлення 2332 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
36+12.64 грн
44+9.73 грн
50+8.55 грн
58+7.30 грн
100+6.46 грн
250+6.21 грн
500+6.12 грн
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
AP2205-50W5-7 AP2205.pdf
AP2205-50W5-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: AP2205
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 2.3...24V
Integrated circuit features: shutdown mode control input
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AP2204RA-5.0TRG1 AP2204_Jan2020.pdf
AP2204RA-5.0TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SOT89; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Manufacturer series: AP2204
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.6...24V
на замовлення 231 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
13+37.03 грн
16+26.50 грн
19+22.73 грн
25+18.62 грн
100+13.84 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
AP2204R-5.0TRG1 AP2204_Jan2020.pdf
AP2204R-5.0TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SOT89; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Manufacturer series: AP2204
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.6...24V
на замовлення 380 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
40+10.73 грн
100+9.90 грн
250+9.23 грн
Мінімальне замовлення: 40 шт
В кошику  од. на суму  грн.
BZT52B15LP-7B BZT52B15LP.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; X1-DFN1006-2; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: X1-DFN1006-2
Kind of package: reel; tape
Semiconductor structure: single diode
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SMAJ33A-13-F SMAJ_ser.pdf
SMAJ33A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 2212 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
42+10.84 грн
100+7.39 грн
500+4.86 грн
1000+4.67 грн
2000+4.34 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
SMAJ33AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ33AQ-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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В кошику  од. на суму  грн.
P4SMAJ33ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMAJ33ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷42.2V; 11.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...42.2V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DESDA5V3L-7 DESDA5V3L.pdf
DESDA5V3L-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.3V; 20A; unidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.3V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Leakage current: 2µA
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Max. forward impulse current: 20A
Capacitance: 220pF
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